CN113353971B - Preparation method of spherical nanoscale high-dispersion ITO powder - Google Patents
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- CN113353971B CN113353971B CN202110708842.2A CN202110708842A CN113353971B CN 113353971 B CN113353971 B CN 113353971B CN 202110708842 A CN202110708842 A CN 202110708842A CN 113353971 B CN113353971 B CN 113353971B
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- 239000000843 powder Substances 0.000 title claims abstract description 43
- 239000006185 dispersion Substances 0.000 title claims abstract description 10
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 239000012266 salt solution Substances 0.000 claims abstract description 18
- 239000000243 solution Substances 0.000 claims abstract description 18
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 claims abstract description 17
- 238000006243 chemical reaction Methods 0.000 claims abstract description 16
- 239000012716 precipitator Substances 0.000 claims abstract description 14
- 239000000203 mixture Substances 0.000 claims abstract description 12
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims abstract description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical class [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 11
- 235000011114 ammonium hydroxide Nutrition 0.000 claims abstract description 11
- 238000001354 calcination Methods 0.000 claims abstract description 11
- 238000004140 cleaning Methods 0.000 claims abstract description 10
- IGUXCTSQIGAGSV-UHFFFAOYSA-K indium(iii) hydroxide Chemical compound [OH-].[OH-].[OH-].[In+3] IGUXCTSQIGAGSV-UHFFFAOYSA-K 0.000 claims abstract description 10
- 229910021626 Tin(II) chloride Inorganic materials 0.000 claims abstract description 9
- 150000002471 indium Chemical class 0.000 claims abstract description 9
- CVNKFOIOZXAFBO-UHFFFAOYSA-J tin(4+);tetrahydroxide Chemical compound [OH-].[OH-].[OH-].[OH-].[Sn+4] CVNKFOIOZXAFBO-UHFFFAOYSA-J 0.000 claims abstract description 9
- 238000001035 drying Methods 0.000 claims abstract description 6
- 238000005507 spraying Methods 0.000 claims abstract description 6
- 239000007788 liquid Substances 0.000 claims abstract description 5
- 239000002994 raw material Substances 0.000 claims abstract description 4
- 239000012798 spherical particle Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 25
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 10
- 229910003437 indium oxide Inorganic materials 0.000 claims description 6
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000000889 atomisation Methods 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 239000002270 dispersing agent Substances 0.000 claims description 4
- 229910001449 indium ion Inorganic materials 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 239000004115 Sodium Silicate Substances 0.000 claims description 3
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052911 sodium silicate Inorganic materials 0.000 claims description 3
- XURCIPRUUASYLR-UHFFFAOYSA-N Omeprazole sulfide Chemical compound N=1C2=CC(OC)=CC=C2NC=1SCC1=NC=C(C)C(OC)=C1C XURCIPRUUASYLR-UHFFFAOYSA-N 0.000 claims description 2
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical group Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 claims description 2
- 238000004321 preservation Methods 0.000 claims description 2
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical group Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 claims description 2
- YQMWDQQWGKVOSQ-UHFFFAOYSA-N trinitrooxystannyl nitrate Chemical compound [Sn+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O YQMWDQQWGKVOSQ-UHFFFAOYSA-N 0.000 claims description 2
- 239000000126 substance Substances 0.000 description 8
- 238000000975 co-precipitation Methods 0.000 description 7
- 239000007921 spray Substances 0.000 description 7
- 229910021617 Indium monochloride Inorganic materials 0.000 description 6
- APHGZSBLRQFRCA-UHFFFAOYSA-M indium(1+);chloride Chemical compound [In]Cl APHGZSBLRQFRCA-UHFFFAOYSA-M 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000011259 mixed solution Substances 0.000 description 4
- 238000004448 titration Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- 238000005054 agglomeration Methods 0.000 description 3
- 230000002776 aggregation Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 238000005979 thermal decomposition reaction Methods 0.000 description 3
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 150000003863 ammonium salts Chemical class 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000009841 combustion method Methods 0.000 description 2
- 238000002485 combustion reaction Methods 0.000 description 2
- KSLJWNPTKCBAMV-UHFFFAOYSA-G diacetyloxyindiganyl acetate triacetyloxystannyl acetate Chemical compound C(C)(=O)[O-].[Sn+4].[In+3].C(C)(=O)[O-].C(C)(=O)[O-].C(C)(=O)[O-].C(C)(=O)[O-].C(C)(=O)[O-].C(C)(=O)[O-] KSLJWNPTKCBAMV-UHFFFAOYSA-G 0.000 description 2
- 238000000635 electron micrograph Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000010907 mechanical stirring Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000001291 vacuum drying Methods 0.000 description 2
- 238000003828 vacuum filtration Methods 0.000 description 2
- 238000005303 weighing Methods 0.000 description 2
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 description 1
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 description 1
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- -1 ammonia radical ion Chemical class 0.000 description 1
- 239000001099 ammonium carbonate Substances 0.000 description 1
- 235000012501 ammonium carbonate Nutrition 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G19/00—Compounds of tin
- C01G19/006—Compounds containing tin, with or without oxygen or hydrogen, and containing two or more other elements
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/30—Particle morphology extending in three dimensions
- C01P2004/32—Spheres
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/80—Compositional purity
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Conductive Materials (AREA)
Abstract
The invention discloses a preparation method of spherical nanoscale high-dispersion ITO powder, which is characterized in that indium tin mixed salt solution is prepared by taking indium salt and tin salt solution as raw materials; ammonia water solution is used as a precipitator; then the indium tin mixed salt solution and the precipitator solution are atomized by an atomizer respectively to form tiny liquid fog which is sprayed into a reaction chamber in a mode of opposite spraying to react, a mixture of indium hydroxide and tin hydroxide with uniform and spherical particles is generated, and the nano ITO powder is obtained by cleaning, drying and calcining.
Description
Technical Field
The invention relates to a preparation method of spherical nanoscale high-dispersion ITO powder, belonging to the field of materials.
Background
Indium Tin Oxide (ITO), also known as tin-doped indium oxide powder, is prepared from In 2 O 3 And SnO 2 The ITO material has high visible light transmittance, high infrared reflectivity, excellent conductivity and good etching performance, and can be widely applied to the aspects of electrical materials, transparent electrode materials, solar cell materials and screen display technologies.
At present, the preparation method of the ITO powder mainly comprises the following steps: chemical coprecipitation, chemical titration, electrolysis, sol-gel, spray combustion, spray pyrolysis, mechanical mixing, and the like.
(1) The chemical coprecipitation method comprises mixing indium salt and tin salt with ammonium salt capable of decomposing ammonia, such as urea and ammonium carbonate, heating, reacting the ammonia radical ion decomposed from ammonium salt with indium salt and tin salt to generate mixture of indium hydroxide and tin hydroxide, filtering, drying, and calcining to obtain nanoscale ITO powder.
(2) The chemical titration method is to drop weak alkali such as ammonia water into the mixed solution of indium salt and tin salt at a constant speed to generate a mixture of indium hydroxide and tin hydroxide, and then the mixture is filtered, dried and calcined to obtain the nano ITO powder.
(3) The electrolytic method is that indium tin alloy in a certain proportion is used as an anode and is placed in ammonium nitrate electrolyte to generate indium hydroxide and stannous acid precipitate, and ITO powder is obtained after filtering, drying and calcining.
(4) The spray combustion method is that high-purity metal indium and metal tin are heated to indium-tin alloy melt, the alloy melt is atomized in an atomizing burner to form tiny alloy fog drops, and then the alloy fog drops are introduced into a high-temperature reaction chamber for violent oxidation combustion and are quenched to form ITO powder.
(5) The spray thermal decomposition method is that high-purity metal indium tin is mixed according to a certain proportion and poured into acetic acid solvent to prepare indium tin acetate salt aqueous solution, and then the indium tin acetate salt aqueous solution is sprayed into a container to carry out spray thermal decomposition to form ITO powder.
(6) The mechanical grinding method is that indium oxide and tin dioxide are added with solvent in a ball mill, mixed and ground, and then spray-dried to form ITO powder.
Among the above methods, the electrolytic method is relatively serious in pollution. The spray combustion method and the spray thermal decomposition method have complex production processes and expensive equipment, and limit the application of the method to a certain extent. The ITO powder produced by the mechanical grinding method has simple process, but the obtained ITO powder is difficult to reach the nano level, has poor powder fluidity and low sintering density during molding, and cannot meet the requirement of high-end ITO target materials. The chemical coprecipitation method and the chemical titration method have the advantages of simple chemical equipment and process flow, easily controlled test conditions and small environmental pollution, and are mature methods for preparing the ITO powder at present. However, ITO powder prepared by the chemical coprecipitation method is easy to agglomerate, poor in fluidity and irregular in powder particle shape. When the ITO powder is prepared by a titration method, ITO precursor synthesis and precipitation need to be finished in a container and a solution, and the concentration gradient and the pH value gradient difference of a precipitator exist in an indium-tin salt solution, so that the nucleation rate and the growth rate of crystals in different areas in the solution are different, and the sizes of crystal grains are not uniform. In addition, the ratio of indium to tin in the ITO powder also deviates from the design value, thereby affecting the performance of the ITO powder.
Therefore, it is an urgent need to solve the problems of the present invention to provide a novel ITO powder having high cost performance and excellent performance and a method for preparing the same.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a preparation method of spherical nanoscale high-dispersion ITO powder, which can solve the problems of complex preparation process and poor performance of the existing ITO powder.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows:
a spherical nanoscale high-dispersion ITO powder preparation method comprises the steps of preparing indium tin mixed salt solution by taking indium salt and tin salt solution as raw materials; ammonia solution is used as a precipitator; and then the indium tin mixed salt solution and the precipitator solution are atomized by the atomizer respectively to form tiny liquid fog which is sprayed into the reaction chamber in a spraying mode for reaction, so that the indium tin mixed salt solution and the precipitator solution are uniformly mixed in a liquid fog shape in a micron scale and a nanometer scale, and the uniformity of the reaction distribution of the precipitator and the indium tin mixed salt solution is improved. Meanwhile, the pH value of the whole system is kept stable in the atomization process, and the agglomeration phenomenon caused by nonuniform reaction due to large-range change of the pH value is avoided. And finally, carrying out atomization coprecipitation reaction to generate a mixture of indium hydroxide and tin hydroxide with uniform and spherical particles, and cleaning, drying and calcining the mixture to obtain the nano ITO powder.
The technical scheme of the invention is further improved as follows: the indium-tin mixed salt solution is prepared according to the mass ratio of indium oxide to tin dioxide of 8:1-9:1.
The technical scheme of the invention is further improved as follows: 0.1 to 0.6 percent of sodium silicate dispersant is added when the indium-tin mixed salt solution is prepared.
The technical scheme of the invention is further improved as follows: the indium salt is indium chloride or indium nitrate, wherein the concentration of indium ions is 180g-200g/L; the tin salt is tin chloride or tin nitrate.
The technical scheme of the invention is further improved as follows: the concentration of the ammonia water is 160g-400g/L; the pH value is 7-8.
The technical scheme of the invention is further improved as follows: the average median diameter of the atomized particles of the atomization disperser is 12-50 mu m; and the percentage of particles <50 μm is 80%.
The technical scheme of the invention is further improved as follows: and the indium hydroxide and the tin hydroxide are both in a micron or nanometer scale.
The technical scheme of the invention is further improved as follows: the cleaning process adopts absolute ethyl alcohol or deionized water for cleaning for 2-3 times.
The technical scheme of the invention is further improved as follows: the calcination temperature is 600-900 ℃, and the heat preservation time is 1-3h.
The technical scheme of the invention is further improved as follows: the calcination temperature is 720-850 ℃.
Due to the adoption of the technical scheme, the invention has the technical progress that:
aiming at the problems of complex preparation process and poor performance of the existing ITO powder, the invention takes indium salt and tin salt solution as raw materials and ammonia water solution as a precipitator, and adopts a spray mixing and reaction method to prepare a mixture of indium hydroxide and tin hydroxide; the indium-tin mixed salt solution and the precipitator solution are uniformly mixed in a liquid-fog shape in a micron scale and a nanometer scale to generate a mixture of indium hydroxide and tin hydroxide with uniform and spherical particles, so that the dispersion uniformity of the precipitator is improved, the pH value of the whole system is stable, and the agglomeration phenomenon caused by the large-range change of the pH value is avoided; the nano ITO powder obtained by cleaning, drying and calcining is in a nano-scale spherical structure, has uniform crystal grain size, is highly dispersed without agglomeration, and greatly improves the comprehensive performance of the ITO powder.
Drawings
FIG. 1 is an electron micrograph of example 1 of the present invention;
FIG. 2 is an electron micrograph of example 2 of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the following examples:
example 1
Proportioning design is carried out according to the mass ratio of the indium oxide to the tin dioxide of 8:1; weighing InCl respectively 3 Solution and SnCl 3 Adding 0.3% of dispersing agent into the solution, and preparing the InCl through mechanical stirring 3 And SnCl 3 The solution was mixed so that the concentration of indium ions was 180g/L. Deionized water is added into ammonia water, and the mixture is mechanically stirred to prepare a precipitator solution, wherein the concentration of the ammonia water is adjusted to be 160g/L. The reactor is taken as a container, and the prepared InCl is respectively atomized by an atomizer 3 With SnCl 3 The mixed solution and the precipitant are atomized and sprayed into a reaction kettle with a certain height in a mode of opposite spraying to generate coprecipitation reaction. And after the reaction is finished, carrying out vacuum filtration on the precipitate, cleaning for 2 times by using absolute ethyl alcohol, carrying out vacuum drying to obtain a precursor of the ITO powder, and then placing the precursor in an electric furnace to calcine for 3 hours at 750 ℃ to obtain the ITO powder. The purity of the obtained ITO powder is more than 99 percent, the granularity is 200-500nm, the ITO powder is spherical and highly dispersed, and the crystal grains are uniform in size.
Example 2
Proportioning design is carried out according to the mass ratio of the indium oxide to the tin dioxide of 9:1; separately weighing InCl 3 Solution and SnCl 3 Adding 0.6% sodium silicate dispersant into the solution, and preparing InCl by mechanical stirring 3 And SnCl 3 The concentration of indium ions in the mixed solution was 200g/L. Deionized water is added into ammonia water, and the mixture is mechanically stirred to prepare a precipitator solution, wherein the concentration of the ammonia water is adjusted to 300g/L.
The reactor is taken as a container, and the prepared InCl is respectively atomized by an atomizer 3 And SnCl 3 The mixed solution and the precipitant are atomized and sprayed into a reaction kettle with a certain height in a mode of opposite spraying to generate coprecipitation reaction. After the reaction is finished, carrying out vacuum filtration on the precipitate, cleaning for 3 times by adopting absolute ethyl alcohol, carrying out vacuum drying to obtain a precursor of the ITO powder, then placing the precursor in an electric furnace, and calcining at 800 DEG CThe ITO powder was obtained after 4 hours of firing. The purity of the obtained ITO powder is more than 99 percent, the granularity is 200-500nm, the ITO powder is spherical and highly dispersed, and the size of crystal grains is uniform.
Claims (4)
1. A spherical nanoscale high-dispersion ITO powder preparation method comprises the steps of preparing indium tin mixed salt solution by taking indium salt and tin salt solution as raw materials; ammonia water solution is used as a precipitator; then, atomizing the indium tin mixed salt solution and the precipitator solution respectively through an atomizer to form tiny liquid fog, spraying the tiny liquid fog into a reaction chamber in a counter-spraying mode for reaction to generate a mixture of indium hydroxide and tin hydroxide with uniform and spherical particles, and cleaning, drying and calcining the mixture to obtain nano ITO powder;
the indium tin mixed salt solution is prepared according to the mass ratio of indium oxide to tin dioxide of 8:1-9:1;
when preparing the indium tin mixed salt solution, 0.1 to 0.6 percent of sodium silicate dispersant is added;
the indium salt is indium chloride or indium nitrate solution, wherein the concentration of indium ions is 180g-200g/L; the tin salt is tin chloride or tin nitrate;
the concentration of the ammonia water is 160g-400g/L; the pH value is 7-8;
the average median diameter of the atomized particles of the atomization disperser is 12-50 mu m; and the percentage of particles <50 μm is 80%;
and the indium hydroxide and the tin hydroxide are both in a micron or nanometer scale.
2. The method for preparing spherical nanoscale high-dispersion ITO powder according to claim 1, wherein the method comprises the following steps: the cleaning process adopts absolute ethyl alcohol or deionized water for cleaning for 2-3 times.
3. The method for preparing spherical nanoscale high-dispersion ITO powder according to claim 1, wherein the method comprises the following steps: the calcination temperature is 600-900 ℃, and the heat preservation is carried out for 1-3h.
4. The method for preparing spherical nanoscale highly-dispersed ITO powder according to claim 1, wherein the method comprises the following steps: the calcination temperature is 720-850 ℃.
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| CN110713200A (en) * | 2018-07-12 | 2020-01-21 | 南方科技大学 | Metal oxide powder and preparation method and equipment thereof |
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Patent Citations (6)
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