CN112582566B - Packaging structure, preparation method thereof and photoelectric device - Google Patents
Packaging structure, preparation method thereof and photoelectric device Download PDFInfo
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Abstract
The invention discloses a packaging structure, a preparation method thereof and a photoelectric device. The package structure includes: the active carbon film comprises an active carbon film and an oxide film formed on the active carbon film, wherein the active carbon film has a porous structure, and the pores are closed pores. The packaging structure formed by the porous activated carbon film and the oxide film can effectively prevent water and oxygen from corroding the device, and the service life of the device is prolonged; meanwhile, the packaging structure can remarkably improve the heat conductivity of the packaging material due to the use of the carbon material with high heat conductivity, thereby improving the stability and prolonging the service life of the device. In addition, compared with the traditional cover plate packaging method, the packaging method has the characteristics of light weight, thinness, high efficiency and the like, and overcomes the defect that glass is fragile, so that the service life of the device is prolonged.
Description
Technical Field
The invention relates to the technical field of photoelectric devices, in particular to a packaging structure, a preparation method thereof and a photoelectric device.
Background
The service life of the photoelectric device is shortened mainly due to the fact that oxygen and moisture in air are adsorbed, and moisture in the environment permeates into the device, so that the aging of the device is accelerated, and the service life of the device is shortened. The organic film and the metal electrode are protected from the influence of outside air through the packaging process, and finally the purpose of prolonging the service life of the device can be achieved, so that the packaging process has great influence on the service life of the device.
The traditional photoelectric device packaging technology is completed in a glove box with water and oxygen content lower than 1 ppm. And transferring the manufactured device into a glove box by a linear manipulator in the glove box. The back cover plate is coated with UV glue by an automatic glue coating machine with a program adjusted, the manufactured photoelectric device substrate is aligned and attached to the back cover plate coated with the UV glue, and a barrier separated from the atmospheric environment is formed after UV exposure, so that water and oxygen in the air can be effectively prevented from entering the photoelectric device, and the reaction with the water and oxygen is avoided. The traditional rear cover type packaging mode has the following defects: easily generates buckling deformation (metal back cover), easily generates micro cracks and expansion (metal back cover), and easily becomes brittle (glass back cover). The periphery of the traditional package needs to be bonded by UV glue, the UV glue is loose and porous after being cured, and water vapor and oxygen can easily pass through the UV glue. The built-in moisture absorbent expands after absorbing water, so that the device is deformed easily, and further damaged.
Currently, the packaging technology of commercial photoelectric devices is being developed from the conventional cover plate type packaging to the novel thin film integrated packaging. The film package enables the dream of flexible display to be realized, but at the present stage, the package life and stability need to be further improved, the cost advantage is not great, and the advantage is not very obvious compared with the traditional package.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a package structure, a method for manufacturing the same, and a photovoltaic device, which are used to solve the problems of poor stability and short lifetime of the device due to poor water-oxygen isolation effect and poor thermal conductivity of the conventional packaging film.
The technical scheme of the invention is as follows:
a package structure, comprising: the active carbon film comprises an active carbon film and an oxide film formed on the active carbon film, wherein the active carbon film has a porous structure, and the pores are closed pores.
A method for preparing a packaging structure comprises the following steps:
providing a thermosetting polymer film, and cracking the thermosetting polymer film to obtain an activated carbon film with a porous structure;
and preparing an oxide film on the activated carbon film to obtain the packaging structure.
The photoelectric device comprises a photoelectric device and an encapsulation structure encapsulated on the photoelectric device, wherein the encapsulation structure is the encapsulation structure provided by the invention, and an activated carbon film in the encapsulation structure is attached to the photoelectric device.
Has the advantages that: the packaging structure comprises two layers of films: the introduction of the active carbon film can obviously improve the barrier property and the heat conduction property of the packaging structure, and mainly because the active carbon has good adsorption capacity and can effectively adsorb gas molecules and water molecules, the gas molecules and the water molecules are very difficult to permeate the film layer, so that the water-oxygen barrier property of the film layer is improved; the use of the carbon material with high thermal conductivity can obviously reduce the interface thermal resistance of the film layer, thereby greatly improving the thermal conductivity of the film layer. The oxide film not only utilizes the synergistic effect of the multilayer film to further improve the water and oxygen barrier performance of the packaging structure, but also can protect the active carbon film to prevent oxygen in the air from oxidizing the active carbon film and influencing the service life of the packaging structure. By utilizing the combined action of the two films, the water vapor and oxygen can be effectively isolated, and the heat can be effectively dissipated.
Drawings
Fig. 1 is a schematic structural diagram of a package structure according to an embodiment of the present invention.
Fig. 2 is a schematic flow chart of a method for manufacturing a package structure according to an embodiment of the present invention.
Fig. 3 is a schematic illustration of the laser processed thermoset polymer film of fig. 2.
Fig. 4 is a schematic structural diagram of an optoelectronic device according to an embodiment of the present invention.
Detailed Description
The invention provides a packaging structure, a preparation method thereof and a photoelectric device, and the invention is further described in detail below in order to make the purpose, technical scheme and effect of the invention clearer and clearer. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
An embodiment of the present invention provides a package structure, as shown in fig. 1, which includes: the active carbon film comprises an active carbon film and an oxide film formed on the active carbon film, wherein the active carbon film has a porous structure, and the pores are closed pores.
The closed holes correspond to through holes, and one end of each hole in the activated carbon film is closed, so that water and oxygen cannot permeate through the holes.
The package structure of the present embodiment includes two layers of films: the introduction of the active carbon film can obviously improve the barrier property and the heat conduction property of the packaging structure, and mainly because the active carbon has good adsorption capacity and can effectively adsorb gas molecules and water molecules, the gas molecules and the water molecules are very difficult to permeate the film layer, so that the water-oxygen barrier property of the film layer is improved; the use of the carbon material with high thermal conductivity can obviously reduce the interface thermal resistance of the film layer, thereby greatly improving the thermal conductivity of the film layer. The oxide film not only utilizes the synergistic effect of the multilayer film to further improve the water and oxygen barrier performance of the packaging structure, but also can protect the active carbon film to prevent oxygen in the air from oxidizing the active carbon film and influencing the service life of the packaging structure. By utilizing the combined action of the two films, the water vapor and oxygen can be effectively isolated, and the heat can be effectively dissipated.
In one embodiment, the pores have a diameter of 0.1 to 0.3 nm. The diameter of the closed porous is controlled between 0.1 nm and 0.3nm, so that the diameter of the hole is smaller than that of the gas molecule, and the gas molecule can not permeate the film.
In one embodiment, the thickness of the activated carbon film is 300-500 nm. The thickness of the activated carbon film is more than 300nm to have good heat insulation and adsorption capacity, and the cost is too high when the thickness is more than 500nm, so that the influence on various performances is not too great.
In one embodiment, the oxide film has a thickness of 100-300 nm. The oxide film mainly plays a role in protecting the activated carbon film, and atmosphere permeation is easy to occur when the thickness of the oxide film is less than 100nm, so that the stability of the packaging structure is influenced.
In one embodiment, the material of the oxide thin film includes one or more of silicon oxide, titanium oxide, zirconium oxide, and the like, but is not limited thereto.
The embodiment of the invention provides a preparation method of a packaging structure, which comprises the following steps as shown in fig. 2:
s10, providing a thermosetting polymer film, and cracking the thermosetting polymer film to obtain an activated carbon film with a porous structure;
s20, preparing an oxide film on the activated carbon film to obtain the packaging structure.
In step S10, in one embodiment, the thermosetting polymer film is prepared by a process including: the thermosetting polymer is prepared into the thermosetting polymer film by a solution method. The solution method may be a method of inkjet printing or spin coating, etc., but is not limited thereto. When the ink-jet printing method is adopted, the thickness of the film layer can be controlled by controlling the number of printing drops and the concentration of ink.
In step S10, in one embodiment, the thermosetting polymer includes one or more of, but is not limited to, epoxy resin, polyvinylidene chloride, and the like.
In step S10, in one embodiment, the thermosetting polymer film is cracked by laser heating in vacuum. As shown in fig. 3, the thermosetting polymer film is heated and cracked by a laser heating method (for example, by a laser) in vacuum, so as to obtain an activated carbon film with a porous structure, wherein the pores are closed pores. In this embodiment, the thermosetting polymer film is heated and cracked by a laser heating method (for example, a laser device) in vacuum, in the cracking process, the high molecular chains of the thermosetting polymer are broken and small gas molecules are released, so that the thermosetting polymer film is changed into a uniform porous activated carbon film, and the holes are closed holes because the holes are not subjected to an activation treatment (the activation treatment process is similar to a molecular sieve oxidation through hole process), so that the activated carbon film has a large specific surface area, the surface of the film layer has strong adsorbability to the gas molecules, and the gas molecules are difficult to permeate the film layer.
In the embodiment, the closing condition of the holes of the active carbon film is controlled by controlling the heating decomposition condition, so that the gas molecules can not completely permeate the film. Further, in an embodiment, the temperature of the laser heating is controlled between 300-. Further in one embodiment, the heating rate of the laser heating is controlled to be between 0.1 and 1 ℃/min. The diameter of the closed porous is controlled to be 0.1-0.3nm by controlling the laser heating rate, so that the diameter of the hole is smaller than the diameter of the gas molecule, the gas molecule cannot permeate the film, the laser heating polymer film ensures that the heating rate is 0.1-1 ℃/min, and the gas molecule heated and decomposed can be ensured to diffuse slowly, so that the diameter of the hole is reduced.
In step S10, in one embodiment, the thickness of the activated carbon film is 300-500 nm.
In step S20, in one embodiment, the oxide thin film is prepared by CVD, PVD, ALD, or the like. The oxide film mainly has the functions of isolating water and oxygen and protecting the active carbon film under the active carbon film, so that the situation that the closed holes in the active carbon film are ablated by oxidizing gases such as oxygen and the like in the outside air to cause hole opening and influence on gas permeability is avoided. For example, a CVD method is used to prepare a silicon dioxide film, and the preparation process specifically includes: SiH is taken as silicon source4Gas, oxygen source N2The O gas is introduced into the reaction cavity according to a certain proportion, and under the condition of a certain temperature of 200-300 ℃, argon is adopted as carrier gas, and the silicon dioxide generated by the reaction is deposited on the surface of the prepared closed porous active carbon film, so that the formed packaging structure can prevent the water and oxygen from permeating and can protect the oxidation effect of the closed porous active carbon film.
In step S20, in one embodiment, the thickness of the oxide film is 100-300 nm.
The nano-scale porous activated carbon film + oxide film multilayer packaging structure prepared by the embodiment forms a good covering step, can effectively prevent water and oxygen from corroding the device, and prolongs the service life of the device; meanwhile, the packaging structure can remarkably improve the heat conductivity of the packaging material due to the use of the carbon material with high heat conductivity, thereby improving the stability and prolonging the service life of the device. In addition, compared with the traditional cover plate packaging method, the packaging method has the characteristics of light weight, thinness, high efficiency and the like, and overcomes the defect that glass is fragile, so that the service life of the device is prolonged. In addition, by optimizing the packaging film material and optimizing the packaging structure, the barrier property and the thermal conductivity of the packaging structure can be further improved, so that the service life and the efficiency of the device are further improved.
The embodiment of the invention provides a photoelectric device, wherein the photoelectric device comprises a photoelectric device and an encapsulation structure encapsulated on the photoelectric device, the encapsulation structure is the encapsulation structure provided by the embodiment of the invention, and an activated carbon film in the encapsulation structure is attached to the photoelectric device. The packaging structure has perfect water oxygen barrier property and good heat conduction property, so that the part of energy converted from electric energy into heat energy in the light emitting process of the device is conducted out through the packaging structure more easily, heat dissipation of the device is facilitated, the film layer structure of the functional layer of the device is protected, and the service life of the photoelectric device is prolonged.
In one embodiment, the optoelectronic device is a quantum dot light emitting diode comprising: the anode, the cathode and the quantum dot light-emitting layer are arranged between the anode and the cathode, and the active carbon film in the packaging structure is attached to the cathode. In other words, the optoelectronic device comprises a quantum dot light emitting diode and an encapsulation structure encapsulated on the quantum dot light emitting diode, wherein an activated carbon film in the encapsulation structure is attached to a cathode in the quantum dot light emitting diode.
In the present embodiment, the quantum dot light emitting diode has various forms, and the quantum dot light emitting diode has a positive type structure and an inverse type structure, and the present embodiment will be described in detail mainly by taking the quantum dot light emitting diode with the positive type structure as shown in fig. 4 as an example. Specifically, as shown in fig. 4, the quantum dot light emitting diode includes a substrate, an anode, a hole injection layer, a hole transport layer, a quantum dot light emitting layer, an electron transport layer, and a cathode, which are stacked from bottom to top. The quantum dot light-emitting diode is provided with the packaging structure, and an activated carbon film in the packaging structure is attached to the cathode.
In one embodiment, the substrate may be a rigid substrate, such as glass, or a flexible substrate, such as one of PET or PI.
In one embodiment, the anode may be selected from one or more of indium doped tin oxide (ITO), fluorine doped tin oxide (FTO), antimony doped tin oxide (ATO), aluminum doped zinc oxide (AZO), and the like. The thickness of the anode is 30-50 nm.
In one embodiment, the material of the hole injection layer is a material having good hole injection properties, and may include, for example, but not limited to, one or more of poly (3, 4-ethylenedioxythiophene) -polystyrenesulfonic acid (PEDOT: PSS), copper phthalocyanine (CuPc), 2,3,5, 6-tetrafluoro-7, 7',8,8' -tetracyanoquinodimethane (F4-TCNQ), 2,3,6,7,10, 11-hexacyano-1, 4,5,8,9, 12-Hexaazatriphenylene (HATCN), transition metal oxide, transition metal chalcogenide compound; wherein the transition metal oxide may include, but is not limited to NiOx、MoOx、WOx、CrOxAnd CuO; the metal chalcogenide compound may include, but is not limited to, MoSx、MoSex、WSx、WSexAnd CuS. The thickness of the hole injection layer is 30-40 nm.
In one embodiment, the material of the hole transport layer is an organic material having good hole transport ability, and may include, for example, but not limited to, Poly (9, 9-dioctylfluorene-CO-N- (4-butylphenyl) diphenylamine) (TFB), Polyvinylcarbazole (PVK), Poly (N, N 'bis (4-butylphenyl) -N, N' -bis (phenyl) benzidine) (Poly-TPD), Poly (9, 9-dioctylfluorene-CO-bis-N, N-phenyl-1, 4-Phenylenediamine) (PFB), 4', 4 ″ -tris (carbazol-9-yl) triphenylamine (TCTA), 4' -bis (9-Carbazole) Biphenyl (CBP), N '-diphenyl-N, N' -bis (3-methylphenyl) -1, one or more of 1 '-biphenyl-4, 4' -diamine (TPD), N '-diphenyl-N, N' - (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine (NPB), graphene, and C60.
In one embodiment, the hole transport layer may also be an inorganic material with hole transport capability, such as may include but is not limited to NiOx、MoOx、WOx、CrOx、CuO、MoSx、MoSex、WSx、WSexAnd CuSAnd (4) seed preparation.
In one embodiment, the hole transport layer has a thickness of 30 to 50 nm.
In one embodiment, the material of the quantum dot light emitting layer may be oil-soluble quantum dots comprising one or more of binary phase, ternary phase, quaternary phase quantum dots, and the like; the binary phase quantum dots comprise one or more of CdS, CdSe, CdTe, InP, AgS, PbS, PbSe, HgS and the like, the ternary phase quantum dots comprise one or more of ZnCdS, CuInS, ZnCdSe, ZnSeS, ZnCdTe, PbSeS and the like, and the quaternary phase quantum dots comprise one or more of ZnCdS/ZnSe, CuInS/ZnS, ZnCdSe/ZnS, CuInSeS, ZnCdTe/ZnS, PbSeS/ZnS and the like. The material of the quantum dot light-emitting layer can be any one of common red, green and blue quantum dots or other yellow light, and the quantum dots can contain cadmium or do not contain cadmium. The quantum dot light emitting layer of the material has the characteristics of wide and continuous excitation spectrum distribution, high emission spectrum stability and the like. In this embodiment, the thickness of the quantum dot light emitting layer is about 20nm to 60 nm.
In one embodiment, the material of the electron transport layer may be selected from materials having good electron transport properties, for example, and may include, but is not limited to, n-type ZnO, TiO, and the like2、Fe2O3、SnO2、Ta2O3One or more of AlZnO, ZnSnO, InSnO and the like. In this embodiment, the thickness of the electron transport layer is about 80 nm.
In one embodiment, the cathode may be selected from one of an aluminum (Al) electrode, a silver (Ag) electrode, a gold (Au) electrode, and the like, and may also be selected from one of a nano aluminum wire, a nano silver wire, a nano gold wire, and the like.
In this embodiment, the encapsulation structure encapsulated on the quantum dot light emitting diode includes two layers of films: the active carbon film is introduced to remarkably improve the barrier property and the heat conduction property of the packaging structure, and the active carbon has good adsorption capacity and can effectively adsorb gas molecules and water molecules, so that the gas molecules and the water molecules are extremely difficult to penetrate through the film layer, the water-oxygen barrier property of the film layer is improved, and the service life of the quantum dot light-emitting diode is prolonged; the use of the carbon material with high thermal conductivity can obviously reduce the interface thermal resistance of the film layer, thereby greatly improving the thermal conductivity of the film layer and further improving the stability and the service life of the quantum dot light-emitting diode. The oxide film not only utilizes the synergistic effect of the multilayer film to further improve the water and oxygen barrier performance of the packaging structure, but also can protect the active carbon film to prevent oxygen in the air from oxidizing the active carbon film and influencing the service life of the packaging structure. By utilizing the combined action of the two films, the penetration of water vapor and oxygen can be effectively isolated, the heat can be effectively dissipated, the quality of the quantum dot light-emitting diode is reduced, the stability is improved, and the service life and the efficiency of the quantum dot light-emitting diode are further improved.
The invention is further illustrated by the following specific examples.
Example 1
The present embodiment provides an optoelectronic device. The photoelectric device comprises a substrate, a quantum dot light emitting diode combined on the substrate and a packaging structure used for packaging the quantum dot light emitting diode. The structure of the photoelectric device is as follows from bottom to top: ITO substrate (50 nm)/PEDOT: PSS (50nm)/poly-TPD (30 nm)/quantum dot luminescent layer (20nm)/ZnO (30nm)/Mg-Ag alloy (50 nm)/packaging structure (400 mm).
Sequentially forming layers on the ITO substrate according to the quantum dot light-emitting diode structure of the embodiment, thereby forming the quantum dot light-emitting diode;
the packaging structure is composed of two layers: a porous activated carbon film of 300nm thickness, and a silica film of 100nm thickness formed on the porous activated carbon film. The preparation process of the porous activated carbon film specifically comprises the following steps: polyvinylidene chloride is prepared into ink, the ink is then sprayed and printed on the quantum dot light-emitting diode under the printing condition of 17 drops, the ink concentration is 60mg/ml, the thickness of the dried film is 300nm, the quantum dot light-emitting diode prepared with the polymer film is placed under a laser, the preheating temperature of the laser is 200 ℃, and the laser power density is 1.0 multiplied by 105W/cm2The diameter of the light spot is 1mm, the laser wavelength is 10.6 μm, and the scanning speed of the laser is 10 m/min. Laser heating to 600 ℃, polyvinylidene chloride material decomposes and accomplishes, because there is gas to run out in the decomposition process for remaining carbon film is closed porous carbon film, and its whole process is gone on in the vacuum environment, avoids carbon oxidation.
The preparation process of the silicon dioxide film comprises the following specific steps: SiH as silicon source by CVD method4Gas 3sccm, oxygen source N2And introducing 6sccm of O gas into the vacuum chamber, reacting in the vacuum chamber for 20min, wherein the argon flow is 10sccm, preparing a 100 nm-thick silicon dioxide film, and finishing the preparation of the packaging structure when the two layers of films completely cover the surface of the quantum dot light-emitting diode.
Example 2
The present embodiment provides an optoelectronic device. The photoelectric device comprises a substrate, a quantum dot light emitting diode combined on the substrate and a packaging structure used for packaging the quantum dot light emitting diode. The structure of the photoelectric device is as follows from bottom to top: ITO substrate (50 nm)/PEDOT: PSS (50nm)/poly-TPD (30 nm)/quantum dot luminescent layer (20nm)/ZnO (30nm)/Mg-Ag alloy (50 nm)/packaging structure (600 mm).
Sequentially forming layers on the ITO substrate according to the quantum dot light-emitting diode structure of the embodiment, thereby forming the quantum dot light-emitting diode;
the packaging structure is composed of two layers: a porous activated carbon film of 300nm thickness, and a silica film of 100nm thickness formed on the porous activated carbon film. The preparation process of the porous activated carbon film specifically comprises the following steps: preparing ink from polyacrylonitrile, printing on a photoelectric device by ink jet printing under 17 drops with ink concentration of 60mg/ml to make the thickness of the film after drying 400nm, placing the quantum dot light-emitting diode with the polymer film under a laser with preheating temperature of 150 deg.C and laser power density of 1.0 × 105W/cm2The diameter of the light spot is 1mm, the laser wavelength is 10.6 μm, and the scanning speed of the laser is 10 m/min. The polyacrylonitrile material is decomposed by laser heating to 650 deg.C, and residual carbon is generated due to gas escaping during decompositionThe film is a closed porous carbon film, and the whole process is carried out in a vacuum environment, so that the carbon is prevented from being oxidized.
The preparation process of the silicon dioxide film comprises the following specific steps: SiH as silicon source by CVD method4Gas 3sccm, oxygen source N2And introducing 6sccm of O gas into the vacuum chamber, reacting in the vacuum chamber for 40min, wherein the argon flow is 10sccm, preparing a 200 nm-thick silicon dioxide film, and finishing the preparation of the packaging structure when the two layers of films completely cover the surface of the quantum dot light-emitting diode.
Example 3
The present embodiment provides an optoelectronic device. The photoelectric device comprises a substrate, a quantum dot light emitting diode combined on the substrate and a packaging structure used for packaging the quantum dot light emitting diode. The structure of the photoelectric device is as follows from bottom to top: ITO substrate (50 nm)/PEDOT: PSS (50nm)/poly-TPD (30 nm)/quantum dot luminescent layer (20nm)/ZnO (30nm)/Mg-Ag alloy (50 nm)/packaging structure (400 mm).
Sequentially forming layers on the ITO substrate according to the quantum dot light-emitting diode structure of the embodiment, thereby forming the quantum dot light-emitting diode;
the packaging structure is composed of two layers: the porous activated carbon film with the thickness of 300nm and the titanium dioxide film with the thickness of 100nm formed on the porous activated carbon film are prepared by the following specific steps: preparing polyvinylidene chloride into ink, then carrying out ink-jet printing on a photoelectric device under the printing condition of 17 drops and the ink concentration of 60mg/ml to ensure that the thickness of the dried film is 300nm, placing the quantum dot light-emitting diode with the prepared polymer film under a laser, wherein the preheating temperature of the laser is 200 ℃, and the laser power density is 1.0 multiplied by 105W/cm2The diameter of the light spot is 1mm, the laser wavelength is 10.6 μm, and the scanning speed of the laser is 10 m/min. Laser heating to 600 ℃, polyvinylidene chloride material decomposes and accomplishes, because there is gas to run out in the decomposition process for remaining carbon film is closed porous carbon film, and its whole process is gone on in the vacuum environment, avoids carbon oxidation.
The preparation process of the titanium dioxide film comprises the following specific steps: by means of CVDMethod of making titanium source TiCl4And introducing 4sccm of gas and 8sccm of water vapor into the vacuum cavity, reacting in the vacuum cavity for 20min, wherein the argon flow is 10sccm, preparing a titanium dioxide film with the thickness of 200nm, and completing the preparation of the packaging structure when the two layers of films completely cover the surface of the quantum dot light-emitting diode.
In summary, according to the packaging structure, the preparation method thereof and the photoelectric device provided by the invention, the packaging structure formed by the porous activated carbon film and the oxide film can effectively prevent water and oxygen from corroding the device, and the service life of the device is prolonged; meanwhile, the packaging structure can remarkably improve the heat conductivity of the packaging material due to the use of the carbon material with high heat conductivity, thereby improving the stability and prolonging the service life of the device. In addition, compared with the traditional cover plate packaging method, the packaging method has the characteristics of light weight, thinness, high efficiency and the like, and overcomes the defect that glass is fragile, so that the service life of the device is prolonged.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (10)
1. A package structure, comprising: the active carbon film comprises an active carbon film and an oxide film formed on the active carbon film, wherein the active carbon film has a porous structure, and the pores are closed pores.
2. The package structure of claim 1, wherein the diameter of the hole is 0.1-0.3 nm.
3. The package structure of claim 1, wherein the thickness of the activated carbon film is 300-500 nm; and/or
The thickness of the oxide film is 100-300 nm.
4. The package structure of claim 1, wherein the material of the oxide thin film comprises one or more of silicon oxide, titanium oxide, and zirconium oxide.
5. A method for manufacturing a package structure is characterized by comprising the following steps:
providing a thermosetting polymer film, and cracking the thermosetting polymer film to obtain an activated carbon film with a porous structure;
preparing an oxide film on the activated carbon film to obtain the packaging structure;
the holes are closed holes.
6. The method for preparing the package structure of claim 5, wherein the thermosetting polymer film is cracked by laser heating in vacuum.
7. The method of claim 5, wherein the thermosetting polymer comprises one or more of epoxy resin and polyvinylidene chloride.
8. The method as claimed in claim 6, wherein the temperature of the laser heating is controlled to be between 300 ℃ and 800 ℃; and/or
The heating rate of the laser heating is controlled between 0.1 and 1 ℃/min.
9. An optoelectronic device, comprising an optoelectronic device and a package structure packaged on the optoelectronic device, wherein the package structure is according to any one of claims 1 to 4, and an activated carbon film in the package structure is attached to the optoelectronic device.
10. The optoelectronic device of claim 9, wherein the optoelectronic device is a quantum dot light emitting diode comprising: the anode, the cathode and the quantum dot light-emitting layer are arranged between the anode and the cathode, and the active carbon film in the packaging structure is attached to the cathode.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002313557A (en) * | 2001-04-10 | 2002-10-25 | Nec Corp | Powder holding sheet, method of manufacturing powder holding sheet, and organic el display device equipped with the powder holding sheet |
| KR20120137014A (en) * | 2011-06-10 | 2012-12-20 | 삼성디스플레이 주식회사 | Organic light emitting diode display |
| CN102884131A (en) * | 2010-05-07 | 2013-01-16 | 住友电木株式会社 | Epoxy resin composition for circuit boards, prepreg, laminate, resin sheet, laminate for printed wiring boards, printed wiring boards, and semiconductor devices |
| CN103325953A (en) * | 2012-03-19 | 2013-09-25 | 瀚宇彩晶股份有限公司 | Organic light emitting diode package and packaging method thereof |
| CN103779464A (en) * | 2012-10-22 | 2014-05-07 | 铼钻科技股份有限公司 | Flip-chip light emitting diode and application thereof |
| CN107565047A (en) * | 2017-08-18 | 2018-01-09 | 福州大学 | A kind of method for packing of flexible OLED devices |
-
2019
- 2019-09-29 CN CN201910934648.9A patent/CN112582566B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002313557A (en) * | 2001-04-10 | 2002-10-25 | Nec Corp | Powder holding sheet, method of manufacturing powder holding sheet, and organic el display device equipped with the powder holding sheet |
| CN102884131A (en) * | 2010-05-07 | 2013-01-16 | 住友电木株式会社 | Epoxy resin composition for circuit boards, prepreg, laminate, resin sheet, laminate for printed wiring boards, printed wiring boards, and semiconductor devices |
| KR20120137014A (en) * | 2011-06-10 | 2012-12-20 | 삼성디스플레이 주식회사 | Organic light emitting diode display |
| CN103325953A (en) * | 2012-03-19 | 2013-09-25 | 瀚宇彩晶股份有限公司 | Organic light emitting diode package and packaging method thereof |
| CN103779464A (en) * | 2012-10-22 | 2014-05-07 | 铼钻科技股份有限公司 | Flip-chip light emitting diode and application thereof |
| CN107565047A (en) * | 2017-08-18 | 2018-01-09 | 福州大学 | A kind of method for packing of flexible OLED devices |
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