CN109524361B

CN109524361B - Packaging film, electronic device and preparation method of electronic device

Info

Publication number: CN109524361B
Application number: CN201710852901.7A
Authority: CN
Inventors: 朱佩; 曹蔚然
Original assignee: TCL Technology Group Co Ltd
Current assignee: TCL Technology Group Co Ltd
Priority date: 2017-09-20
Filing date: 2017-09-20
Publication date: 2020-12-04
Anticipated expiration: 2037-09-20
Also published as: CN109524361A

Abstract

The invention discloses a packaging film, an electronic device and a preparation method thereof. The packaging film comprises a first film layer, wherein the molar ratio of boron to carbon in the material of the first film layer is 9-13:2, the content of boron is high, and the packaging film can react with water and oxygen in the air to generate boron oxide, so that the purposes of water and oxygen resistance can be achieved. The invention also provides a packaging film comprising four layers of synergistic layers, and through the synergistic effect of the four contained film layers, on one hand, the channel of water and oxygen immersion etching in the environment is prolonged; on the other hand, the packaging structure has the effects of blocking water and oxygen, has a stable structure and good heat dissipation performance, ensures the stability of the electrochemical performance of the packaged electronic element, and prolongs the service life of the electronic element of the device.

Description

Packaging film, electronic device and preparation method of electronic device

Technical Field

The invention belongs to the technical field of encapsulating films, and particularly relates to an encapsulating film, an electronic device comprising the encapsulating film and a preparation method of the electronic device.

Background

The encapsulation film can be used for protecting electronic components such as solar cells, electric light emitting devices, which are sensitive to external factors such as moisture or oxygen.

The lifetime of electronic components is a very important parameter. The service life of the electronic element is prolonged to reach the commercial level, and the packaging is a crucial link. For electronic components, the package is not only a physical protection against scratches, but also a protection against moisture and oxygen in the external environment. Moisture in these environments permeates into the device and accelerates device aging. Therefore, the package structure of the electronic component must have a good permeation barrier function.

The aging process of the electronic element is mainly represented by the formation of a non-light emitting region (black dot) and the luminance degradation with time under constant current driving, mainly because most organic substances of the light emitting layer are sensitive to pollutants in the atmosphere, oxygen and moisture. In actual operation, the cathode is corroded by 10% to seriously affect the operation of the device. Therefore, the development of high performance encapsulation materials will have the effect of increasing the efficiency and lifetime of the devices with little effort.

Currently, the packaging technology of commercial electronic components is being developed from the conventional cover plate type package to the new type of thin film integrated package. Compared with the traditional cover plate packaging, the thin film packaging can obviously reduce the thickness and the quality of the device, about 50% of potential packaging cost is saved, and meanwhile, the thin film packaging can be suitable for the flexible device. Thin film packaging technology will be a necessary trend for development. For example, a patent of osram OLED limited company discloses the use of a film encapsulation, specifically an organic or inorganic encapsulation layer, and a metal layer is added on the outer surface of the film encapsulation layer. Thus, depending on its role of the encapsulation layer, it primarily functions to transfer heat to the metal layer for heat dissipation. And it does not specifically disclose what materials are organic or inorganic and the process conditions for formation.

Although ceramic films have good water and oxygen barrier properties, good step coverage, and excellent thickness uniformity, attempts have been made to use barrier materials for electronic component packaging. Particularly, the silicon carbide film has the characteristics of high thermal conductivity, good chemical stability, high temperature resistance and the like, and is also a good packaging material. However, defects (pinholes, cracks, etc.) inevitably occur during the formation of ceramic films such as silicon carbide films, the presence of defects greatly reduces the barrier capability thereof, and the water and oxygen barrier properties do not meet the packaging requirements of devices. Meanwhile, the ceramic film can generate larger stress, and the packaging quality is seriously influenced. In addition, when the multilayer ceramic film body structure is arranged, the problem of compatibility is easily caused when the multilayer ceramic films are stacked due to the difference of thermal expansion coefficients, and the quality of the packaging film is further influenced.

Therefore, how to improve the packaging effect of electronic components such as electronic components is a technical problem that the industry is trying to solve.

Disclosure of Invention

The invention aims to overcome the defects in the prior art and provide a packaging film to solve the technical problem that the existing packaging film layer made of a ceramic film has poor water and oxygen barrier capability.

Another object of the present invention is to provide an electronic device and a method for manufacturing the same, which can solve the problems of poor performance stability and short service life of the electronic device caused by poor water and oxygen barrier properties and unstable structure of the packaging member of the conventional electronic device.

In order to achieve the above object, according to one aspect of the present invention, there is provided an encapsulation film. The encapsulation film includes:

the film comprises a first film layer, wherein the molar ratio of boron to carbon in the material of the first film layer is 9-13: 2.

Further, the encapsulation film of the present invention further comprises:

a second film layer in laminate combination with the first film layer;

the packaging film further comprises a second film layer, and the molar ratio of boron to carbon in the material of the second film layer is 1: 1-5.

Further, the encapsulation film of the present invention further comprises:

a third film layer, the first film layer being bonded to the third film layer, the second film layer being bonded to the first film layer;

the material of the third film layer comprises: at least one of SiC, AlN, and BeO.

Further, the encapsulation film of the present invention further comprises:

a fourth film layer, the third film layer being bonded to the fourth film layer, the first film layer being bonded to the third film layer, the second film layer being bonded to the first film layer;

the molar ratio of boron element to carbon element in the material of the fourth film layer is 1: 1-5.

In another aspect of the invention, an electronic device is provided. The electronic device includes:

a substrate;

an electronic element formed on the substrate; and

the packaging film is used for packaging the electronic element and comprises a first film layer, and the molar ratio of boron element to carbon element in the material of the first film layer is 9-13: 2.

In another aspect of the present invention, a method for manufacturing an electronic device is provided, including the steps of:

providing a base material, wherein the base material comprises a substrate and an electronic element arranged on the substrate;

forming a packaging film on the substrate to package the electronic element; the packaging film comprises a first film layer, wherein the molar ratio of boron to carbon in the material of the first film layer is 9-13: 2.

The electronic element is packaged by adopting the packaging film. The molar ratio of boron element to carbon element in the material of the first film layer is 9-13:2, the material of the first film layer is adopted, because the content of the boron element in the material is high, the material can react with water and oxygen in the air to generate boron oxide within the molar ratio range of the boron element to the carbon element, and can play a role in water and oxygen resistance, and in the process of generating the boron oxide through reaction, the boron oxide is filled into pores of the material in an amorphous state to repair the pores in the material, so that a self-healing effect is achieved, and the purpose of water and oxygen resistance is further achieved.

Furthermore, in order to prevent the first film layer from being oxidized due to direct contact with water and oxygen in the air and prolong a water and oxygen resisting channel, the packaging film is also provided with a second film layer. Preferably, in order to make the interface between the first film layer and the second film layer bond better, the material of the second film layer still includes a material containing boron and carbon, but the content of boron in the material of the second film layer is relatively lower, and the molar ratio of boron to carbon in the material of the second film layer is 1:1-5, because less B makes the layer have no self-healing effect (i.e. a small amount of boron is difficult to react with water and oxygen to generate boron oxide), so as to achieve the purpose of protecting the first film layer, and more carbon can be used as a sintering aid, so as to facilitate low-temperature deposition.

Further, the packaging film of the present invention further includes a body material layer, i.e. the third film layer, and the material of the third film layer is preferably selected from materials with water-blocking, oxygen-effect and heat-dissipation effects, such as SiC, AlN, BeO, and the like, but not limited thereto.

Furthermore, in order to prevent the electronic element from being damaged by high temperature in the process of directly preparing the material of the third film layer on the electronic element, a fourth film layer with a buffering function can be additionally arranged. Preferably, the material of the fourth film layer is still a material including boron element and carbon element, and the molar ratio of the boron element to the carbon element in the material of the fourth film layer is 1: 1-5.

Sequentially stacking the fourth film layer, the third film layer, the first film layer and the second film layer on the surface of the electronic element or the electronic element and the substrate, namely forming the fourth film layer on the surface of the electronic element or the electronic element and the substrate; a third film layer is arranged on the surface of the fourth film layer in a laminated mode; a first film layer is arranged on the surface of the third film layer in a laminated mode; a second film layer is arranged on the surface of the first film layer in a laminated mode; and packaging the electronic element. Through the synergistic effect among the four layers, on one hand, the channel of water and oxygen immersion etching in the environment is prolonged; on the other hand, the device has the effects of water and oxygen resistance and heat dissipation, is stable in structure, and prolongs the service life of the electronic element.

The electronic device prepared by the method has stable performance, long service life, easily controlled process conditions and low cost.

Drawings

FIG. 1 is a schematic structural diagram of an encapsulation film according to an embodiment of the present invention;

FIG. 2 is a schematic view of another structure of an encapsulation film according to an embodiment of the present invention;

FIG. 3 is a schematic diagram of a third structure of an encapsulation film according to an embodiment of the invention;

FIG. 4 is a diagram illustrating a fourth structure of an encapsulation film according to an embodiment of the present invention;

FIG. 5 is a schematic diagram of an electronic device according to an embodiment of the invention;

FIG. 6 is a schematic view of another electronic device according to an embodiment of the invention;

FIG. 7 is a schematic structural diagram of an electronic device including the encapsulation film shown in FIG. 1 according to an embodiment of the invention;

FIG. 8 is a schematic structural diagram of an electronic device including the encapsulation film shown in FIG. 2 according to an embodiment of the invention;

FIG. 9 is a schematic structural diagram of an electronic device including the encapsulation film shown in FIG. 3 according to an embodiment of the invention;

FIG. 10 is a schematic structural diagram of an electronic device including the encapsulation film shown in FIG. 4 according to an embodiment of the invention.

Detailed Description

In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

In the embodiments of the present invention, the following terms are explained below.

The term "electronic device" used herein refers to an electronic component having a structure including a material layer that generates charge exchange using holes and electrons between a pair of electrodes facing each other, and includes, by way of example, a photovoltaic device, a rectifier, an emitter, an electroluminescent device, but the present application is not limited thereto. The electrical light emitting device includes a light emitting diode such as an OLED, a QLED, but is not limited thereto.

The term "package" used in the present invention refers to a process of covering a portion of an electronic component to be packaged with a package film layer, where different electronic component structures have different requirements for the packaged portion according to the implemented functions, and specifically, the portion of the electronic component to be packaged may be all top surfaces and side surfaces of the electronic component, or may be only the top surface or the side surfaces of the electronic component. The encapsulation film may be formed on the surface of the electronic component or on the surface of the electronic component and the substrate depending on the portion to be encapsulated.

In a specific embodiment of the present invention, firstly, an encapsulation film is provided, where the encapsulation film includes a first film layer, and a molar ratio of boron element to carbon element in a material of the first film layer is 9-13: 2.

In an embodiment, an embodiment of the present invention provides a packaging film with excellent water and oxygen blocking effects and a stable structure, where the packaging film 20 is a single-layer structure film as shown in fig. 1, the packaging film 20 is a first film layer 23 structure, a molar ratio of a boron element to a carbon element in a material of the first film layer 23 is 9-13:2, the material of the first film layer 23 has a high content of the boron element, the boron element can rapidly react with oxygen and water in the air to generate a liquid boron oxide, and the liquid boron oxide can fill and block pores and cracks in the material of the first film layer 23, so as to generate a "self-healing" effect, and prevent water and oxygen in an environment from continuously permeating into a device. The carbon element in the material can activate the surface of the boron carbide particles, and the change of the components and the internal structure between the carbon element and the boron carbide increases the rearrangement stress of the boron carbide particles, reduces the viscosity coefficient of the boron carbide and increases the plastic flow capacity of the boron carbide film.

In one specific embodiment, the material of the first film 23 may be a boron carbide material (e.g., B)₁₃C₂Particles) and the like are not limited thereto, but may be a boron carbide material (e.g., B)₁₃C₂Particles) with elemental carbon materials (e.g., graphite) or carbon-containing compound materials (e.g., phenolic resins, glucose, etc.).

In another specific embodiment, the encapsulation film may be prepared by a chemical vapor infiltration reaction method, and the process conditions for preparing the monolayer encapsulation film of the first film layer 23 by the chemical vapor infiltration reaction method are as follows: with gaseous source B, gaseous source C and H₂The deposition power is 30-50KW, the deposition temperature is 700-₂The flow rate is 80-100ml/min, the flow rate of the dilution gas is 150-: BCl₃、BBr₃、BI₃Boranes (e.g. B)₂H₆、B₄H₁₀) Etc.; the gaseous C source comprises: gaseous small molecular alkanes and alkenes such as propylene, ethylene or methane; the diluent gas, whose main function is to control the pressure in the reaction chamber, does not participate in the gaseous reaction. The diluent gas comprises all inert gases that do not react with the reactant gases, and argon is preferred for cost and performance reasons. By regulating the flow rates of the gaseous B source and the gaseous C source, the molar ratio of the C element to the B element in the material can be further regulated, and the first film layer 23 is prepared.

In one embodiment, the embodiment of the present invention provides an encapsulation film having excellent water and oxygen blocking effects and a stable structure, where the encapsulation film 20 is a two-layer structure including a first film layer 23 and a second film layer 24, as shown in fig. 2. The function and material selection of the first film layer 23 are as described above, and are not described herein. The second film layer 24 plays a role in protecting the first film layer 23, so that oxygen in the air is prevented from directly contacting the first film layer 23, oxidation of the first film layer 23 is delayed or stopped, and a water and oxygen resisting channel is prolonged. The material of the second film layer 24 is not limited, and may be a conventional oxide ceramic material, a nitride ceramic material, but is not limited thereto, as long as it can function as: the first film layer 23 is protected, and the first film layer 23 is prevented from directly contacting with water and oxygen in the air.

In one specific embodiment, in order to make the interface between the first film layer 23 and the second film layer 24 bond better, the material of the second film layer 24 is boron carbide material or a combination material of boron carbide material and carbon simple substance material (such as graphite) or carbon-containing compound material (such as phenolic resin, etc.), and the molar ratio of boron element to carbon element in the material of the second film layer 24 is 1: 1-5. For example, the boron carbide material includes B₁₃C₂、B₁₂C₃And B₄C₁The particles and the like are not limited thereto.

In another specific embodiment, the second film layer may be prepared by a chemical vapor infiltration reaction method, and the conditions for forming the second film layer 24 on the first film layer by laminating the first film layer and the second film layer by the chemical vapor infiltration reaction method are that a gaseous B source, a gaseous C source and H are used₂The deposition power is 30-50KW, the deposition temperature is 800-₂The flow rate is 80-100ml/min, the flow rate of diluted gas Ar is 150-200ml/min, and the deposition rate is 300-400 nm/h. The second film layer 24 with different thickness is prepared by adjusting the deposition time. By regulating the flow rates of the gaseous B source and the gaseous C source, the molar ratio of the C element to the B element in the material can be further regulated, and the second film layer 24 can be prepared.

Wherein the gaseous B source comprises: BCl₃、BBr₃、BI₃Boranes (e.g. B)₂H₆、B₄H₁₀) Etc.; the gaseous C source comprises: gaseous small molecular alkanes and alkenes such as propylene, ethylene or methane; the diluent gas, whose main function is to control the pressure in the reaction chamber, does not participate in the gaseous reaction. The diluent gas comprises all inert gases that do not react with the reactant gases, and argon is preferred for cost and performance reasons.

In one embodiment, an embodiment of the present invention provides an encapsulation film having excellent water and oxygen barrier effects and a stable structure, and the encapsulation film 20 is shown in fig. 3. The encapsulation film 20 includes a first film layer 23, a second film layer 24, and a third film layer 22, the first film layer 23 being disposed between the second film layer 24 and the third film layer 22. The functions and material selections of the first film layer 23 and the second film layer 24 are as described above, and are not described in detail herein. The third film layer 22 has the functions of water resistance, oxygen resistance and heat dissipation, and the material of the third film layer 22 includes at least one of SiC, AlN and BeO. In one specific embodiment, the thickness of the third layer 22 is 100nm to 700nm, and the third layer 22 can be used as a carrier for the encapsulation film 20.

Since the third film layer 22 is disposed on the surface 10 of the electronic component, a higher temperature is often required, which may cause damage to the electronic component. In a specific embodiment, therefore, the embodiments of the present invention provide a packaging film with excellent water and oxygen barrier effect and stable structure. The packaging film structure is as shown in fig. 4, the packaging film 20 includes a fourth film 21, a third film 22, a first film 23 and a second film 24 which are sequentially laminated and combined, the third film is laminated and combined on the surface of the fourth film, the first film is laminated and combined on the surface of the third film, and the second film is laminated and combined on the surface of the first film. The functions and material selections of the first film layer 23, the second film layer 24 and the third film layer 22 are as described above and will not be described herein. The fourth film layer 21 in the encapsulation film 20 plays a role in buffering, and the fourth film layer 21 is disposed on the surface of the electronic component 10, so that damage to the electronic component 10 caused by directly preparing other layer structures such as the third film layer 22 on the encapsulated electronic component is avoided. The fourth film material may be silicon oxide or silicon nitride, preferably, considering the integration of the preparation process and the better interface bonding of the boron carbide material and the material of the third film 22.

In one specific embodiment, the material of the fourth film layer 21 is a boron carbide material or a combination material of the boron carbide material and a simple carbon material (such as graphite) or a carbon-containing compound material, and the molar ratio of the boron element to the carbon element in the material of the fourth film layer 21 is 1: 1-5. By way of example, the boron carbide material includes B₁₃C₂、B₄C and B₁₂C₃The particles are not limited.

In one specific embodiment, the fourth film layer 21 may be prepared by a chemical vapor infiltration reaction method, and the conditions for forming the fourth film layer 21 on the first film layer by laminating the first film layer by the chemical vapor infiltration reaction method are that a gaseous B source, a gaseous C source and H are used₂The deposition power is 30-50KW, the deposition temperature is 800-₂The flow rate is 80-100ml/min, the flow rate of diluted gas Ar is 150-200ml/min, and the deposition rate is 300-400 nm/h. By adjusting the deposition time, the fourth film layer 21 with different thickness is prepared. By regulating the flow rates of the gaseous B source and the gaseous C source, the molar ratio of the C element to the B element in the material can be further regulated, and the fourth film layer 21 is prepared.

In another aspect, an embodiment of the invention provides an electronic device. The electronic device includes a substrate 01, an electronic component 10 formed on the substrate 01, and an encapsulation film 20 for encapsulating the electronic component 10, as shown in fig. 5 and 6.

The substrate 01 may be a substrate commonly used for electronic components, and may be flexibly selected according to the type of the electronic component.

The electronic component 10 included in the electronic device may be any electronic component that needs to be insulated from oxygen and water, such as an electronic component, a solar cell, and the like. The electronic component may be, among other things, a photovoltaic device, a rectifier, an emitter, an electrical light emitting device, etc. The electrical light emitting device is a light emitting diode, such as an OLED or a QLED.

In an embodiment, when the electronic component 10 is an OLED or a QLED, the electronic component 10 may include a bottom electrode 11, a light emitting unit layer 12, and a top electrode 13, which are sequentially stacked and combined.

In one embodiment, the bottom electrode 11 may be a bottom electrode of a conventional QLED or OLED. In addition, the bottom electrode 11 may be laminated on the substrate 01.

As shown in fig. 6, in one embodiment, the light emitting unit layer 12 includes a hole function layer 121, a light emitting layer 122, an electron function layer 123, and the like.

The hole function layer 121 may include one of a hole injection layer 1211, a hole transport layer 1212, or two layers stacked and combined with each other. When the hole function layer 121 is the hole injection layer 1211 or the hole transport layer 1212, it is laminated and combined between the bottom electrode 11 and the light-emitting layer 122; when the hole function layer 121 is a composite layer of the hole injection layer 1211 and the hole transport layer 1212, the hole injection layer 1211 and the hole transport layer 1212 are sequentially stacked in a direction from the bottom electrode 11 to the light-emitting layer 122, that is, the hole injection layer 1211 is stacked and combined with the bottom electrode 11, and the hole transport layer 1212 is stacked and combined with the light-emitting layer 122. By adding the hole function layer 121, the injection and transmission of holes at the end of the bottom electrode 11 into the light-emitting layer 22 can be effectively improved, and the exciton quantity formed by recombination of the holes and electrons is improved, so that the light-emitting efficiency of the light-emitting layer 22 is improved. In a specific embodiment, the thickness of the hole injection layer 1211 may be 30-40nm, and the material of the hole injection layer 1211 may be, but is not limited toIs PEDOT: PSS; the thickness of the hole transport layer 1212 can be 30-50nm, and the material of the hole transport layer 1212 can be, but not only be, at least one organic substance of poly-TPD and TFB, or NiO and MoO₃At least one inorganic substance.

The thickness of the light emitting layer 122 may be 30-60nm, and the material of the light emitting layer 122 is not limited to core-shell quantum dots, quantum dots based on graded shells, organic phosphorescence material or fluorescent light emitting material. When the material of the light-emitting layer 122 is a quantum dot material light-emitting material, the electric light-emitting device is a quantum dot light-emitting diode; when the material of the light emitting layer 122 is an organic light emitting material such as a fluorescent light emitting material, the electric light emitting device is an organic light emitting diode.

The electron function layer 123 may include one of an electron transport layer 1231, an electron injection layer 1232, or two layers stacked and combined with each other. When the electron function layer 123 is the electron transport layer 1231 or the electron injection layer 1232, it is laminated and combined between the light emitting layer 122 and the top electrode 13; when the electron function layer 123 is a composite layer of the electron transport layer 1231 and the electron injection layer 1232, the electron transport layer 1231 and the electron injection layer 1232 are sequentially stacked from the light emitting layer 122 to the top electrode 13, that is, the electron transport layer 1231 is stacked and combined with the light emitting layer 122, and the electron injection layer 1232 is stacked and combined with the top electrode 13. By adding the electron function layer 123, the injection and transmission of electrons at the end of the top electrode 13 into the light emitting layer 122 can be effectively improved, the exciton quantity formed by the recombination of the electrons and holes is improved, and the light emitting efficiency of the light emitting layer 122 is improved. In a specific embodiment, the thickness of the electron transport layer 1231 can be 50-150nm, and the material of the electron transport layer 1231 can be, but is not limited to, ZnO, Cs₂CO₃、Alq₃At least one of; the thickness of the electron injection layer and the material of the electron injection layer may be conventional in the art. In addition, since the conventional QLED and OLED include an electron transport layer made of a material selected such as ZnO having a good energy level matching with the electrode, an electron injection layer is not generally required.

Therefore, the light emitting efficiency of the light emitting unit layer 12 can be effectively improved by controlling and optimizing the structure of each functional layer contained in the light emitting unit layer 12, the thickness of each functional layer, and the type of material.

The top electrode 13 may be a top electrode of a conventional light emitting diode, such as a metallic silver layer cathode or an aluminum metallic cathode in one embodiment. The thickness of the top electrode 13 may be a conventional thickness such as, but not limited to, 50-100 nm.

As shown in fig. 7, in an embodiment, the electronic device includes a substrate 01, an electronic component 10 and an encapsulation film 20 formed on the substrate 01, where the encapsulation film 20 is a single-layer film formed by the first film layer 23, and a molar ratio of boron element to carbon element in a material of the first film layer 23 is 9-13: 2. The material of the first film layer 23 contains a high content of boron element, the boron element can react with oxygen and water in the air rapidly to generate a liquid boron oxide, and the liquid boron oxide can fill and block pores and cracks in the material of the first film layer 23, so that a self-healing effect is generated, and water and oxygen in the environment are prevented from continuously permeating into the device. Preferably, the material of the first film layer 23 may be a boron carbide material (e.g., B)₁₃C₂Particles) and may also be a boron carbide material (e.g., B)₁₃C₂Particles) with elemental carbon materials (e.g., graphite) or carbonaceous compound materials (e.g., phenolic resins).

As shown in fig. 8, in an embodiment, the encapsulation film further includes a second film layer 24, the first film layer 23 is disposed on the surface of the electronic component 10 or the surfaces of the electronic component 10 and the substrate 01, the second film layer 24 is stacked on the surface of the first film layer 23, the material of the second film layer 24 is a boron carbide material or a combination material of a boron carbide material and a simple carbon material (such as graphite) or a carbon-containing compound material (such as phenolic resin), and a molar ratio of a boron element to a carbon element in the material of the second film layer 24 is 1: 1-5. The second film layer 24 plays a role in protecting the first film layer 23, so that oxygen in the air is prevented from directly contacting the first film layer 23, oxidation of the first film layer 23 is delayed or stopped, and a water and oxygen resisting channel is prolonged.

As shown in fig. 9, in an embodiment, the encapsulation film further includes a third film layer 22, the third film layer 22 is disposed on the surface of the electronic component 10 or the surfaces of the electronic component 10 and the substrate 01, the first film layer 23 is disposed on the surface of the third film layer 22 in a stacked manner, and the second film layer 24 is disposed on the surface of the first film layer 23 in a stacked manner. The third film layer 22 has the functions of water resistance, oxygen resistance and heat dissipation, and the material of the third film layer 22 includes at least one of SiC, AlN and BeO. In one specific embodiment, the thickness of the third layer 22 is 100nm to 700nm, and the third layer 22 can be used as a carrier for the encapsulation film 20.

As shown in fig. 10, in an embodiment, the encapsulation film 20 further includes a fourth film layer 21, the fourth film layer 21 is disposed on the surface of the electronic component 10 or the surfaces of the electronic component 10 and the substrate 01, the third film layer 22 is disposed on the surface of the fourth film layer 21 in a stacked manner, the first film layer 23 is disposed on the surface of the third film layer 22 in a stacked manner, the second film layer 24 is disposed on the surface of the first film layer 23 in a stacked manner, the material of the second film layer 24 is a boron carbide material or a combination material of a boron carbide material and a simple carbon material (such as graphite) or a carbon-containing compound material (such as a phenolic resin), and the molar ratio of boron element to carbon element in the material of the fourth film layer 24 is 1: 1-5. The fourth film layer 21 in the encapsulation film 20 plays a role in buffering, and the fourth film layer 21 is disposed on the surface of the electronic component 10, so that damage to the electronic component 10 caused by directly preparing other layer structures such as the third film layer 22 on the encapsulated electronic component is avoided. The fourth film layer 21, the third film layer 22, the first film layer 23 and the second film layer 24 are sequentially stacked on the surface of the electronic element or the electronic element and the substrate, that is, the fourth film layer 21 is formed on the surface of the electronic element 10 or the electronic element 10 and the substrate 01; a third film layer 22 is laminated on the surface of the fourth film layer 21; a first film layer 23 is laminated on the surface of the third film layer 22; and a second film layer 24 is laminated on the surface of the first film layer 23 to encapsulate the electronic element 10. Through the synergistic effect among the four layers, on one hand, the channel of water and oxygen immersion etching in the environment is prolonged; on the other hand, the device has the effects of water and oxygen resistance and heat dissipation, is stable in structure, and prolongs the service life of the electronic element. In order to ensure the synergistic effect among the four-layer structures, the effects of improving the water-resisting and oxygen-resisting and heat-dissipating effects of the electronic element are realized, and after the electronic element is finally packaged, the electronic device has a compact structure and light weight, preferably, the thickness of the first film layer 23 is 10-30 nm; the thickness of the second film layer 24 is 10-50 nm; the thickness of the third film layer 22 is 100-700 nm; the thickness of the fourth film layer 21 is 10-30 nm.

The embodiment of the invention also provides a preparation method of the electronic device, which comprises the following steps:

providing a base material, wherein the base material comprises a substrate 01 and an electronic element 10 arranged on the substrate;

forming a packaging film 20 on the substrate to package the electronic component 10; the packaging film 20 comprises a first film layer 23, and the molar ratio of boron to carbon in the material of the first film layer 23 is 9-13: 2.

The electronic device includes the encapsulation film 20 as described above with reference to the encapsulation film 20 shown in fig. 1 to 4. Specifically, the film comprises a fourth film layer 21, a third film layer 22, a first film layer 23 and a second film layer 24 which are sequentially laminated and combined. The structural features of each of the fourth film layer 21, the third film layer 22, the first film layer 23, and the second film layer 24, such as the film thickness, the material, etc., are as described above, and for the sake of brevity, the description of the characteristics of the fourth film layer 21, the third film layer 22, the first film layer 23, and the second film layer 24 is omitted here.

The term "package" used in the present invention refers to a process of covering a portion of an electronic component to be packaged with a packaging film layer, where different electronic component structures have different requirements for the portion to be packaged according to the requirements of the implemented characteristics or the operation. Taking the light emitting diode in the embodiment of the invention as an example:

the electronic component 10 (light emitting diode) is disposed on a substrate, the bottom surface of the light emitting diode is bonded to the substrate, and the encapsulation film is laminated on the top surface of the light emitting diode to encapsulate the light emitting diode pair, specifically, as shown in fig. 5 to 10, an encapsulation film 20 may be laminated on the top surface of the top electrode 13 included in the light emitting diode 10. In this way, the influence of the encapsulation film 20 on the light extraction efficiency of the light emitting diode 10 is avoided.

As shown in fig. 7, in an embodiment, the encapsulation film 20 is a single-layer film structure having a first film layer 23, and the method for manufacturing the electronic device includes the following steps:

providing a base material, wherein the base material comprises a substrate 01 and an electronic element 10 (light-emitting diode) arranged on the substrate 01;

the first film layer 23 is formed on the substrate (the top surface of the top electrode 13), and the electronic component 10 is encapsulated with the first film layer as the encapsulation film.

Specifically, in one specific embodiment, the process conditions for preparing the single-layer encapsulation film of the first film layer 23 by using the chemical vapor infiltration reaction method are as follows: with gaseous source B, gaseous source C and H₂The deposition power is 30-50KW, the deposition temperature is 700-₂The flow rate is 80-100ml/min, the flow rate of the dilution gas is 150-: BCl₃、BBr₃、BI₃Boranes (e.g. B)₂H₆、B₄H₁₀) Etc.; the gaseous C source comprises: gaseous small molecular alkanes and alkenes such as propylene, ethylene or methane; the diluent gas, whose main function is to control the pressure in the reaction chamber, does not participate in the gaseous reaction. The diluent gas comprises all inert gases that do not react with the reactant gases, and argon is preferred for cost and performance reasons.

As shown in fig. 8, in an embodiment, the encapsulation film 20 is a dual-layer film structure having a first layer 23 and a second layer 24, and the method for manufacturing the electronic device includes the following steps:

forming the first film layer 23 on the substrate (the top surface of the top electrode 13);

a second film layer 24 is laminated on the surface of the first film layer 23;

encapsulating the electronic component 10;

the molar ratio of boron element to carbon element in the material of the second film layer 24 is 1: 1-5.

The method for forming the first film layer 23 on the substrate (the top surface of the top electrode 13) is as described above and will not be described herein.

Specifically, in one embodiment, gaseous B source, gaseous C source and H are used₂The second film layer 24 is formed on the surface of the first film layer 23 by a chemical vapor infiltration reaction method which is used for reacting gas and carrier gas, and the process conditions of the chemical vapor infiltration reaction method are as follows: the deposition power is 30-50KW, the deposition temperature is 800-1100 ℃, the flow of the gaseous B source is 0.1-8ml/min, the flow of the gaseous C source is 0.1-10ml/min, H₂The flow rate is 80-100ml/min, the flow rate of the diluted gas is 150-200ml/min, and the deposition rate is 300-400 nm/h. Wherein the gaseous B source comprises: BCl₃、BBr₃、BI₃Boranes (e.g. B)₂H₆、B₄H₁₀) Etc.; the gaseous C source comprises: gaseous small molecular alkanes and alkenes such as propylene, ethylene or methane; the diluent gas, whose main function is to control the pressure in the reaction chamber, does not participate in the gaseous reaction. The diluent gas comprises all inert gases that do not react with the reactant gases, and argon is preferred for cost and performance reasons.

As shown in fig. 9, in an embodiment, the encapsulation film 20 is a three-layer film structure having a first layer 23, a second layer 24 and a third layer 22, and the method for manufacturing the electronic device includes the following steps:

forming the third film layer 22 on the substrate (the top surface of the top electrode 13);

a first film layer 23 is laminated on the surface of the third film layer 22;

a second film layer 24 is laminated on the surface of the first film layer 23;

encapsulating the electronic component 10; wherein the material of the third film layer comprises: at least one of SiC, AlN, and BeO.

There are various methods of forming the third film layer 22 on the substrate (the top surface of the top electrode 13). In one embodiment, when the material of the third film layer 22 is SiC, the third film layer 22 can be formed on the substrate (the top surface of the top electrode 13) by a chemical vapor infiltration reaction. The technological conditions for forming the SiC layer by adopting the chemical vapor infiltration reaction method are as follows: the deposition temperature is 900-1300 ℃, the flow rate of the vaporized SiC source is 10-30ml/min, the flow rate of the carrier gas and the diluent gas is 60-100ml/min, and the deposition rate is 300-400 nm/h. Wherein the vaporized SiC source can be, but is not limited to, CH₃SiCl₃，CH₃SiCl₂Polymethylsilane, and the like, but not limited thereto.

The carrier gas and diluent gas may be Ar, H₂、N₂And the like. Of course, if the third layer 22 is made of other materials, the vaporized SiC source may be replaced, and a third layer structure of the corresponding material may be deposited. Further, a chemical vapor infiltration reaction method and the process conditions described above may be used to laminate the first film layer 23 on the surface of the third film layer 22; and a second film layer 24 is laminated on the surface of the first film layer 23.

As shown in fig. 10, in an embodiment, the encapsulation film 20 is a three-layer film structure having a first layer 23, a second layer 24 and a third layer 22, and the method for manufacturing the electronic device includes the following steps:

forming a fourth film layer 21 on the substrate (the top surface of the top electrode 13);

forming a third film layer 22 on the surface of the fourth film layer 21;

forming a first film layer 23 on the surface of the third film layer 22;

and forming a second film layer 24 on the surface of the first film layer 23, wherein the molar ratio of boron element to carbon element in the material of the fourth film layer 21 is 1: 1-5.

Specifically, in one embodiment, gaseous B source, gaseous C source and H are used₂Forming the fourth film layer 21 on the surface of the base material (the top surface of the top electrode 13) by using a chemical vapor infiltration reaction method as a reaction gas and a carrier gas, wherein the process conditions of the chemical vapor infiltration reaction method are as follows: the deposition power is 30-50KW, the deposition temperature is 800-1100 ℃, the flow of the gaseous B source is 0.1-8ml/min, the flow of the gaseous C source is 0.1-10ml/min, H₂The flow rate is 80-100ml/min, the flow rate of the diluted gas is 150-200ml/min, and the deposition rate is 300-400 nm/h. Wherein the gaseous B source comprises: BCl₃、BBr₃、BI₃Boranes (e.g. B)₂H₆、B₄H₁₀) Etc.; the gaseous C source comprises: gaseous small molecular alkanes and alkenes such as propylene, ethylene or methane; the diluent gas, whose main function is to control the pressure in the reaction chamber, does not participate in the gaseous reaction. The diluent gas comprises all inert gases that do not react with the reactant gases, and argon is preferred for cost and performance reasons.

Further, a chemical vapor infiltration reaction and the process conditions described above may be used to form the third film layer 22 on the surface of the fourth film layer 21; forming a first film layer 23 on the surface of the third film layer 22; a second membrane layer 24 is formed on the surface of the first membrane layer 23.

By the synergistic interaction between the layers, on one hand, the channel of water and oxygen immersion etching in the environment is prolonged; on the other hand, the electronic component has the effects of blocking water and oxygen, and is stable in structure, so that the electrochemical performance stability of the packaged electronic component 10 is ensured, and the service life of the electronic component 10 is prolonged. In addition, the preparation method has easily controlled process conditions, can optimize the quality of each film layer by controlling the process conditions of each layer, ensures the stable performance of the prepared packaging film 20 structure, and reduces the preparation cost. In order to ensure the synergistic effect among the four-layer structures, the effects of improving the water-resisting and oxygen-resisting and heat-dissipating effects of the electronic element are realized, and after the electronic element is finally packaged, the electronic device has a compact structure and light weight, preferably, the thickness of the first film layer 23 is 10-30 nm; the thickness of the second film layer 24 is 10-50 nm; the thickness of the third film layer 22 is 100-700 nm; the thickness of the fourth film layer 21 is 10-30 nm. The chemical vapor infiltration reaction method is carried out under the condition of no sub-low temperature and relatively low temperature, the damage to the film is small, the preparation process is flexible, and the composition and microstructure of each layer and each interface of the film composite material can be adjusted by changing the process parameters, so that the effects of water resistance, oxygen resistance and heat dissipation of the invention are well realized.

Since the electronic device has excellent water and oxygen barrier properties and a stable structure, the electronic device has stable electrochemical performance and a long service life. Therefore, the electronic device described above can be widely applied.

When the electronic component 10 included in the electronic device is a light emitting diode, the electronic device is a light emitting diode device. Because the packaging film layer of the light-emitting diode device is in the structure of the packaging film 20, the light-emitting diode device has stable light-emitting electrochemical performance and long service life. Therefore, the light-emitting diode device can be used in the field of display screens or solid-state lighting lamps, so that the stability of the display or light-emitting performance of corresponding devices is improved, and the service life is long.

It should be understood that, when the electronic element is packaged by the packaging film of the present invention to form an electronic device, the second film layer, the third film layer, and the fourth film layer may be combined with the first film layer in any form, and the mutual cooperation between the layers may jointly play a role in resisting water, oxygen, and heat dissipation for the electronic element. It is further understood that other equivalents within the spirit of the invention are also within the scope of the invention. It should be further understood that under the concept of the present invention, other functional layer materials may be added to further enhance the encapsulation effect of the electronic component, and these solutions should also be within the protection scope of the present invention.

The present invention will now be described in further detail with reference to specific examples. In the following examples, "/" indicates lamination bonding.

Example 1

The embodiment provides an electronic device. The QLED packaging film comprises a substrate, a QLED electronic element combined on the substrate and a packaging film used for packaging the QLED electronic element. The structure of the electronic device is as follows: ITO substrate/PEDOT: PSS (50nm)/poly-TPD (30 nm)/quantum dot luminescent layer (20nm)/ZnO (30 nm)/silver (70nm)/B_0.1C_0.5(15nm)/SiC(500nm)/B₁₃C₂(20nm)/B_0.1C_0.5(30nm)。

The electronic device of the present example was prepared as follows:

s11: forming layers on the ITO substrate in sequence according to the QLED structure of the embodiment, thereby forming a QLED;

s12: preparing B on the top surface of a silver electrode of a QLED by adopting a chemical vapor infiltration reaction method_0.1C_0.5Wherein, the chemical vapor infiltration reaction method has the following process conditions: with BCl₃、C₃H₆And H₂Deposition temperature was 800 ℃ for the reaction gas, BCl₃The flow rate is 4ml/min, C₃H₆The flow rate is 8ml/min, H₂The flow rate is 50ml/min, the diluted gas flow rate is 100ml/min, and the deposition rate is 300 nm/h;

s13: in B_0.1C_0.5Preparing SiC on the outer surface by adopting a chemical vapor infiltration reaction method, wherein the chemical vapor infiltration reaction method comprises the following process conditions: deposition temperature 1000 ℃ and CH₃SiCl₃The flow rate of the carrier gas and the diluent gas is 10ml/min, the flow rate of the carrier gas and the diluent gas is 60ml/min, and the deposition rate is 40 nm/h;

s14: preparing B on the outer surface of SiC by chemical vapor infiltration reaction₁₃C₂Wherein, the chemical vapor infiltration reaction method comprises the following steps: deposition temperature was 800 ℃ BCl₃Flow rate of 5ml/min, C₃H₆The flow rate is 10ml/min, H₂The flow rate is 100ml/min, the diluted gas flow rate is 200ml/min, and the deposition rate is 300 nm/h;

s15: in B₁₃C₂The outer surface is prepared by adopting a chemical vapor infiltration reaction method_0.1C_0.5Wherein chemical vapor infiltration is usedThe reaction method comprises the following steps: with BCl₃、C₃H₆And H₂Deposition temperature was 1000 ℃ for the reaction gas, BCl₃The flow rate is 4ml/min, C₃H₆The flow rate is 8ml/min, H₂The flow rate was 50ml/min, the diluent gas flow rate was 100ml/min, and the deposition rate was 300 nm/h.

Example 2

The embodiment provides an electronic device. The QLED packaging film comprises a substrate, a QLED electronic element combined on the substrate and a packaging film used for packaging the QLED electronic element. The structure of the electronic device is as follows: ITO substrate/PEDOT: PSS (50nm)/poly-TPD (30 nm)/quantum dot luminescent layer (20nm)/ZnO (30 nm)/silver (70nm)/B_0.1C_0.5(15nm)/SiC(500nm)/B₁₃C₂(20nm)/B_0.2C_0.8(30nm)。

The electronic device of the present example was prepared as follows:

s21: forming layers on the ITO substrate in sequence according to the QLED structure of the embodiment, thereby forming a QLED;

s22: preparing B on the top surface of a silver electrode of a QLED by adopting a chemical vapor infiltration reaction method_0.1C_0.5Wherein, the chemical vapor infiltration reaction method has the following process conditions: with BCl₃、C₃H₆And H₂Deposition temperature was 800 ℃ for the reaction gas, BCl₃The flow rate is 4ml/min, C₃H₆The flow rate is 8ml/min, H₂The flow rate is 50ml/min, the diluted gas flow rate is 100ml/min, and the deposition rate is 300 nm/h;

s23: in B_0.1C_0.5Preparing SiC on the outer surface by adopting a chemical vapor infiltration reaction method, wherein the chemical vapor infiltration reaction method comprises the following process conditions: deposition temperature 1000 ℃ and CH₃SiCl₃The flow rate of the carrier gas and the diluent gas is 10ml/min, the flow rate of the carrier gas and the diluent gas is 60ml/min, and the deposition rate is 40 nm/h;

s24: preparing B on the outer surface of SiC by chemical vapor infiltration reaction₁₃C₂Wherein, the chemical vapor infiltration reaction method comprises the following steps: deposition temperature was 800 ℃ BCl₃Flow rate of 5ml/min, C₃H₆Flow rate of 10ml/min，H₂The flow rate is 100ml/min, the diluted gas flow rate is 200ml/min, and the deposition rate is 300 nm/h;

s25: in B₁₃C₂The outer surface is prepared by adopting a chemical vapor infiltration reaction method_0.2C_0.8Wherein, the chemical vapor infiltration reaction method comprises the following steps: with BCl₃、C₃H₆And H₂Deposition temperature was 1000 ℃ for the reaction gas, BCl₃The flow rate is 6ml/min, C₃H₆The flow rate is 9ml/min, H₂The flow rate was 50ml/min, the diluent gas flow rate was 100ml/min, and the deposition rate was 350 nm/h.

Example 3

The embodiment provides an electronic device. The QLED packaging film comprises a substrate, a QLED electronic element combined on the substrate and a packaging film used for packaging the QLED electronic element. The structure of the electronic device is as follows: ITO substrate/PEDOT: PSS (50nm)/poly-TPD (30 nm)/quantum dot luminescent layer (20nm)/ZnO (30 nm)/silver (70nm)/B_0.2C_0.8(15nm)/SiC(800nm)/B₁₃C₂(20nm)/B_0.1C_0.5(30nm)。

The electronic device of the present example was prepared as follows:

the preparation method can refer to the method in the example 1, and only needs to adjust the corresponding deposition conditions and control the content of B, C two elements in the BC material for adjustment.

Example 4

The embodiment provides an electronic device. The QLED packaging film comprises a substrate, a QLED electronic element combined on the substrate and a packaging film used for packaging the QLED electronic element. The structure of the electronic device is as follows: ITO substrate/PEDOT: PSS (50nm)/poly-TPD (30 nm)/quantum dot luminescent layer (20nm)/ZnO (30 nm)/silver (70nm)/B_0.5C_0.5(30nm)/SiC(200nm)/B₉C₂(10nm)/B_0.5C_0.5(50nm)。

Example 5

The embodiment provides an electronic device. The QLED packaging film comprises a substrate, a QLED electronic element combined on the substrate and a packaging film used for packaging the QLED electronic element. The structure of the electronic device is as follows: ITO substrate/PEDOT: PSS (50nm)/poly-TPD (30 nm)/quantum dot luminescent layer (20nm)/ZnO (30 nm)/silver (70nm)/B_0.8C_0.2(10nm)/SiC(200nm)/B₁₀C₂(30nm)/B_0.5C_0.5(20nm)。

The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.

Example 6

The embodiment provides an electronic device. The QLED packaging film comprises a substrate, a QLED electronic element combined on the substrate and a packaging film used for packaging the QLED electronic element. The structure of the electronic device is as follows: ITO substrate/PEDOT: PSS (50nm)/poly-TPD (30 nm)/quantum dot luminescent layer (20nm)/ZnO (30 nm)/silver (70nm)/B₁₃C₂(30nm)。

The preparation method can refer to the method in the example 5.

Example 7

The embodiment provides an electronic device. The QLED packaging film comprises a substrate, a QLED electronic element combined on the substrate and a packaging film used for packaging the QLED electronic element. The structure of the electronic device is as follows: ITO substrate/PEDOT: PSS (50nm)/poly-TPD (30 nm)/quantum dot luminescent layer (20nm)/ZnO (30 nm)/silver (70nm)/B₁₀C₂(30nm)/B_0.5C_0.5(20nm)。

The preparation method can refer to the method in the example 5.

Example 8

The embodiment provides an electronic device. It comprises a substrate, a QLED electronic element combined on the substrate and a package for packaging the QLED electronic elementAnd (3) an encapsulation film of the element. The structure of the electronic device is as follows: ITO substrate/PEDOT: PSS (50nm)/poly-TPD (30 nm)/quantum dot luminescent layer (20nm)/ZnO (30 nm)/silver (70nm)/SiC (200nm)/B₉C₂(30nm)/B_0.5C_0.5(20nm)。

The preparation method can refer to the method in the example 5.

Claims

1. An encapsulation film, comprising:

the first film layer is made of a material, wherein the molar ratio of boron to carbon is 9-13: 2;

a second film layer in laminate combination with the first film layer,

the molar ratio of boron element to carbon element in the material of the second film layer is 1: 1-5.

2. The encapsulation film according to claim 1, further comprising:

3. The encapsulation film according to claim 2, further comprising:

4. An electronic device, comprising:

a substrate;

an electronic element formed on the substrate; and

the packaging film is used for packaging the electronic element and comprises a first film layer and a second film layer, wherein the molar ratio of boron element to carbon element in the material of the first film layer is 9-13: 2; the first film layer is arranged on the surface of the electronic element or the surfaces of the electronic element and the substrate, the second film layer is arranged on the surface of the first film layer in a laminated mode, and the molar ratio of boron elements to carbon elements in the material of the second film layer is 1: 1-5.

5. The electronic device of claim 4, wherein the encapsulation film further comprises a third film layer disposed on the surface of the electronic component or the surface of the electronic component and the substrate, wherein the first film layer stack is disposed on the surface of the third film layer, wherein the second film layer stack is disposed on the surface of the first film layer, and wherein the material of the third film layer comprises at least one of SiC, AlN, and BeO.

6. The electronic device according to claim 5, wherein the encapsulation film further comprises a fourth film layer disposed on the surface of the electronic component or the surfaces of the electronic component and the substrate, the third film layer is disposed on the surface of the fourth film layer, the first film layer is disposed on the surface of the third film layer, the second film layer is disposed on the surface of the first film layer, and the fourth film layer is made of a material in which a molar ratio of boron to carbon is 1: 1-5.

7. The electronic device of claim 6,

the thickness of the first film layer is 10-30 nm;

and/or the thickness of the second film layer is 10-50 nm;

and/or the thickness of the third film layer is 100-700 nm;

and/or the thickness of the fourth film layer is 10-30 nm.

8. A method for manufacturing an electronic device, comprising:

forming a packaging film on the substrate to package the electronic element; the packaging film comprises a first film layer and a second film layer, wherein the molar ratio of boron element to carbon element in the material of the first film layer is 9-13: 2; the first film layer is arranged on the surface of the base material, the second film layer is arranged on the surface of the first film layer in a laminated mode, and the molar ratio of boron to carbon in the material of the second film layer is 1: 1-5.

9. The method of claim 8, wherein the step of forming the first film layer on the substrate comprises:

with gaseous source B, gaseous source C and H₂And laminating the first film layer on the substrate by adopting a chemical vapor infiltration reaction method as a reaction gas.

10. The method according to claim 9, wherein the chemical vapor infiltration reaction method is performed under the following process conditions for forming the first film layer by laminating on the substrate: the deposition power is 30-50KW, the deposition temperature is 700-1000 ℃, the flow of the gaseous B source is 0.5-10ml/min, the flow of the gaseous C source is 0.1-10ml/min, H₂The flow rate is 80-100ml/min, the flow rate of the dilution gas is 150-200ml/min, and the deposition rate is 300-400 nm/h.

11. The method for preparing a membrane according to claim 10, wherein the step of laminating a second membrane layer on the surface of the first membrane layer comprises:

with gaseous source B, gaseous source C and H₂And laminating the second film layer on the surface of the first film layer by adopting a chemical vapor infiltration reaction method as a reaction gas.

12. The method of claim 11, wherein the chemical vapor infiltration is usedThe reaction method comprises the following process conditions of laminating and forming the second film layer on the surface of the first film layer: the deposition power is 30-50KW, the deposition temperature is 700-1000 ℃, the gaseous B source is 0.1-8ml/min, the gaseous C source flow is 0.1-10ml/min, H₂The flow rate is 50-80 ml/min, the flow rate of the dilution gas is 150-200ml/min, and the deposition rate is 300-400 nm/h.

13. The method of claim 8, comprising the steps of:

forming a third film layer on the substrate;

a first film layer is arranged on the surface of the third film layer in a laminated mode;

a second film layer is arranged on the surface of the first film layer in a laminated mode;

wherein the molar ratio of boron element to carbon element in the material of the second film layer is 1: 1-5;

14. The method of claim 13, comprising the steps of:

forming a fourth film layer on the substrate;

a third film layer is arranged on the surface of the fourth film layer in a laminated mode;

wherein the molar ratio of boron element to carbon element in the material of the fourth film layer is 1: 1-5.

15. The method of claim 14, wherein the step of disposing the fourth film layer on the substrate in a stacked manner comprises: using a gaseous B source,Gaseous C source and H₂And laminating the fourth film layer on the substrate by adopting a chemical vapor infiltration reaction method as a reaction gas.