CN112531067A - Germanium-silicon avalanche photodetector - Google Patents
Germanium-silicon avalanche photodetector Download PDFInfo
- Publication number
- CN112531067A CN112531067A CN202011403965.7A CN202011403965A CN112531067A CN 112531067 A CN112531067 A CN 112531067A CN 202011403965 A CN202011403965 A CN 202011403965A CN 112531067 A CN112531067 A CN 112531067A
- Authority
- CN
- China
- Prior art keywords
- region
- charge collection
- ohmic contact
- contact layer
- avalanche
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 title claims abstract description 62
- 230000003321 amplification Effects 0.000 claims abstract description 81
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 81
- 230000004888 barrier function Effects 0.000 claims abstract description 5
- 238000010521 absorption reaction Methods 0.000 claims description 32
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 12
- 238000005036 potential barrier Methods 0.000 abstract description 9
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 239000000969 carrier Substances 0.000 abstract description 4
- 238000009825 accumulation Methods 0.000 abstract description 3
- 238000005381 potential energy Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 19
- 239000000463 material Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000000098 azimuthal photoelectron diffraction Methods 0.000 description 5
- 230000009471 action Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention provides a germanium-silicon avalanche photodetector, which comprises: an avalanche amplification region; a first ohmic contact layer and a charge collection region respectively in contact with the avalanche amplification region; a control gate structure connected to the charge collection region; wherein the control gate structure is used for controlling the barrier height of the charge collection region. That is to say, the germanium-silicon avalanche photodetector controls the height of the potential barrier of the charge collection region by adjusting the gate voltage based on the control gate structure, so that only when the accumulation potential energy of carriers in dark current is higher than a certain potential barrier, the carriers can pass through the potential barrier, the dark current of the germanium-silicon avalanche photodetector is reduced, and the photoelectric conversion efficiency is improved.
Description
Technical Field
The invention relates to the technical field of detectors, in particular to a germanium-silicon avalanche photodetector.
Background
Germanium-silicon Avalanche photodiodes (APDs for short) are used as weak light detectors and have very important application in the aspects of optical communication, laser imaging, laser radar and the like.
APDs in the visible and near infrared bands (300nm-1000nm) are generally made of Si materials and are now well established. The APD in the middle infrared band (1.3-1.7 μm) generally adopts III-V materials, the technology is mature, but the cost is high, the uniformity is not good, and the manufacturing of the APD array in the band is very difficult. In addition, silicon-based photonics has developed very rapidly in recent decades, and on one hand, silicon-based photonics is fully compatible with silicon-based integrated circuits, and silicon-based optoelectronic chips will be very cheap in the future; on the other hand, the application market of the optoelectronic integrated chip of the C + L wave band (1.530 μm-1.605 μm) is very large, and the silicon-based optoelectronic device is very suitable for the wave band.
Among them, the III-V materials cannot be monolithically integrated with silicon effectively, and currently only Ge materials are used. Ge materials have been widely studied as absorption layer materials for silicon-based photodetectors. However, the research on Ge as a weak photodetector, namely an avalanche photodiode, has just started, and at present, the Ge has a series of problems of large dark current, low photoelectric conversion efficiency and the like.
Disclosure of Invention
In view of the above, in order to solve the above problems, the present invention provides a germanium-silicon avalanche photodetector, which has the following technical scheme:
a silicon germanium avalanche photodetector, comprising:
an avalanche amplification region;
a first ohmic contact layer and a charge collection region respectively in contact with the avalanche amplification region;
a control gate structure connected to the charge collection region;
wherein the control gate structure is used for controlling the barrier height of the charge collection region.
Optionally, in the above germanium-silicon avalanche photodetector, on the same horizontal plane, the first ohmic contact layer is connected to one end of the charge collection region through the avalanche amplification region; the control gate structure is connected with the middle region of the charge collection region;
the germanium-silicon avalanche photodetector further comprises:
a Ge absorption region disposed on the other end surface of the charge collection region;
the second ohmic contact layer is arranged on one side, away from the charge collecting region, of the Ge absorption region;
a dielectric layer disposed between the control gate structure and the charge collection region;
a third ohmic contact layer disposed on a surface of the control gate structure.
Optionally, in the above germanium-silicon avalanche photodetector, the germanium-silicon avalanche photodetector further includes:
a first electrode disposed on the first ohmic contact layer;
a second electrode disposed on the second ohmic contact layer;
a third electrode disposed on the third ohmic contact layer.
Optionally, in the above germanium-silicon avalanche photodetector, the avalanche amplification region is disposed on the upper surface of one end of the charge collection region;
the first ohmic contact layer is disposed on a side of the avalanche amplification region facing away from the charge collection region.
Optionally, in the above germanium-silicon avalanche photodetector, the avalanche amplification region is disposed on one side of the lower surface of the charge collection region;
the first ohmic contact layer portion is embedded into the avalanche amplification region.
Optionally, in the above germanium-silicon avalanche photodetector, the avalanche amplification region includes: a first partial avalanche amplification region and a second partial avalanche amplification region;
the first ohmic contact layer includes: a first portion of the first ohmic contact layer and a second portion of the first ohmic contact layer;
the first part of avalanche amplification region is arranged on the upper surface of one end of the charge collection region; the first part of the first ohmic contact layer is arranged on one side of the first part of the avalanche amplification region, which faces away from the charge collection region;
the second part of the avalanche amplification region is arranged on one side of the lower surface of the charge collection region; the second portion of the first ohmic contact layer portion is embedded into the avalanche amplification region.
Optionally, in the above germanium-silicon avalanche photodetector, the avalanche amplification region surrounds a sidewall of the charge collection region;
the first ohmic contact layer surrounds the side wall of the avalanche amplification region;
the germanium-silicon avalanche photodetector further comprises:
the Ge absorption region is arranged in the central region of the charge collection region;
the second ohmic contact layer is arranged on one side, away from the charge collecting region, of the Ge absorption region;
the control gate structure is arranged on the charge collection region and surrounds the Ge absorption region, and a gap is reserved between the control gate structure and the Ge absorption region;
a dielectric layer disposed between the control gate structure and the charge collection region;
a third ohmic contact layer disposed on a surface of the control gate structure.
Optionally, in the above germanium-silicon avalanche photodetector, the charge collection region includes: a first portion of the charge collection region and a second portion of the charge collection region; the avalanche amplification region includes: a first partial avalanche amplification region and a second partial avalanche amplification region; the first ohmic contact layer includes: a first portion of the first ohmic contact layer and a second portion of the first ohmic contact layer;
said first partial avalanche amplification region is disposed between said first partial charge collection region and said second partial charge collection region;
the first part of the first ohmic contact layer is connected with the first part of the charge collecting region through the second part of the avalanche amplification region;
the second part of the first ohmic contact layer is connected with the second part of the charge collecting region;
the germanium-silicon avalanche photodetector further comprises:
a Ge absorption region fully covering said first portion of the avalanche amplification region and partially covering said first portion of the charge collection region and said second portion of the charge collection region;
a dielectric layer disposed between the control gate structure and the first portion of the charge collection region;
and the second ohmic contact layer is arranged on the surface of the control gate structure.
Optionally, in the sige avalanche photodetector, the first partial charge collection region and the second partial charge collection region under the Ge absorption region are interdigitated.
The charge collection region includes: a first portion of the charge collection region and a second portion of the charge collection region; the first ohmic contact layer includes: a first portion of the first ohmic contact layer and a second portion of the first ohmic contact layer;
the first part of the first ohmic contact layer and the second part of the first ohmic contact layer are respectively positioned at two sides of the first part of the charge collecting region;
the control gate structure is positioned on the surface of the first part of the charge collection area;
the avalanche amplification region is positioned on one side of the second part of the first ohmic contact layer, which faces away from the first part of the charge collection region;
the second part of the charge collection region is positioned on one side of the avalanche amplification region, which faces away from the second part of the ohmic contact layer;
the germanium-silicon avalanche photodetector further comprises:
a Ge-absorbing region disposed on a surface of said second portion of the charge collection region;
a second ohmic contact layer disposed on a side of the Ge-absorbing region facing away from the second partial charge collection region;
a dielectric layer disposed between the control gate structure and the first portion of the charge collection region;
a third ohmic contact layer disposed on a surface of the control gate structure.
Compared with the prior art, the invention has the following beneficial effects:
the invention provides a germanium-silicon avalanche photodetector, which comprises: an avalanche amplification region; a first ohmic contact layer and a charge collection region respectively in contact with the avalanche amplification region; a control gate structure connected to the charge collection region; wherein the control gate structure is used for controlling the barrier height of the charge collection region. That is to say, the germanium-silicon avalanche photodetector controls the height of the potential barrier of the charge collection region by adjusting the gate voltage based on the control gate structure, so that only when the accumulation potential energy of carriers in dark current is higher than a certain potential barrier, the carriers can pass through the potential barrier, the dark current of the germanium-silicon avalanche photodetector is reduced, and the photoelectric conversion efficiency is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic diagram illustrating a principle of a sige avalanche photodetector according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a specific sige avalanche photodetector according to an embodiment of the present invention;
fig. 3 is a schematic cross-sectional view of the silicon germanium avalanche photodetector shown in fig. 2;
fig. 4 is a schematic top view of the sige avalanche photodetector shown in fig. 2;
fig. 5 is a schematic structural diagram of another specific sige avalanche photodetector according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of another specific sige avalanche photodetector according to an embodiment of the present invention;
fig. 7 is a schematic structural diagram of another specific sige avalanche photodetector according to an embodiment of the present invention;
fig. 8 is a schematic structural diagram of another specific sige avalanche photodetector according to an embodiment of the present invention;
fig. 9 is a schematic structural diagram of another specific sige avalanche photodetector according to an embodiment of the present invention;
fig. 10 is a schematic view of a charge collection region under the Ge absorption region according to an embodiment of the present invention;
fig. 11 is a schematic structural diagram of another specific sige avalanche photodetector according to an embodiment of the present invention;
fig. 12 is a schematic structural diagram of another specific germanium-silicon avalanche photodetector according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Referring to fig. 1, fig. 1 is a schematic diagram of a germanium-silicon avalanche photodetector according to an embodiment of the present invention.
The germanium-silicon avalanche photodetector comprises:
an avalanche amplification region 12;
a first ohmic contact layer 11 and a charge collection region 13 in contact with the avalanche amplification region 12, respectively;
a control gate structure 14 connected to said charge collection region 13;
wherein the control gate structure 14 is used for controlling the barrier height of the charge collection region 13.
In the embodiment, as the area of a general Ge detector window is larger, the capacitance is also larger, so that the control gate structure is adopted, namely a variable resistor with a large range is driven by small voltage, the resistor is equivalent to an adjustable quenching resistor, and the avalanche breakdown voltage can be adjusted by the resistor; for the current carrier, the resistance is equivalent to a potential barrier, the height of the potential barrier of the charge collection region is controlled by adjusting the grid voltage, and the current carrier in the dark current can only be allowed to pass when the accumulation potential energy of the current carrier is higher than a certain potential barrier, so that the dark current of the germanium-silicon avalanche photodetector is reduced, and the photoelectric conversion efficiency is improved.
Further, based on the above-mentioned embodiment of the present invention, referring to fig. 2, fig. 2 is a schematic structural diagram of a specific germanium-silicon avalanche photodetector according to an embodiment of the present invention.
Referring to fig. 3, fig. 3 is a schematic cross-sectional view of the silicon germanium avalanche photodetector shown in fig. 2.
Referring to fig. 4, fig. 4 is a schematic top view of the sige avalanche photodetector shown in fig. 2.
On the same level, the first ohmic contact layer 11 is connected to one end of the charge collection region 13 through the avalanche amplification region 12; the control gate structure 14 is connected with the middle region of the charge collection region 13;
the germanium-silicon avalanche photodetector further comprises:
a Ge absorption region 15 provided on the other end surface of the charge collection region 13;
a second ohmic contact layer 16 disposed on a side of the Ge absorption region 15 facing away from the charge collection region 13;
a dielectric layer 17 disposed between said control gate structure 14 and said charge collection region 13;
a third ohmic contact layer 18 disposed on a surface of the control gate structure 14.
In this embodiment, the first ohmic contact layer 11 is a heavily doped Si region for making ohmic contact with a metal electrode; the avalanche amplification region 12 is an intrinsic Si region; the charge collecting region 13 is a lightly doped Si region; the second ohmic contact layer 16 is a heavily doped Ge region and is used for making ohmic contact with the metal electrode; the third ohmic contact layer 18 is a heavily doped polycrystalline Si region and is used for making ohmic contact with the metal electrode; the Ge absorption region 15 is an intrinsic Ge region.
It should be noted that the dielectric layer 17 is used to prevent the charges in the control gate structure 14 from flowing into the charge collecting region 13.
Optionally, the dielectric layer 17 includes, but is not limited to, SiO2Dielectric layer or HfO2Dielectric layer or Al2O3A dielectric layer.
Note that the second ohmic contact layer 16 is embedded in the Ge absorption region 14.
Further, according to the above embodiments of the present invention, as shown in fig. 2 to fig. 4, the germanium-silicon avalanche photodetector further includes:
a first electrode 19 disposed on the first ohmic contact layer 11;
a second electrode 20 disposed on the second ohmic contact layer 16;
a third electrode 21 disposed on the third ohmic contact layer 18.
In this embodiment, the materials of the first electrode 19, the second electrode 20, and the third electrode 21 are not limited, and may be determined according to actual conditions.
Further, based on the above-mentioned embodiment of the present invention, referring to fig. 5, fig. 5 is a schematic structural diagram of another specific germanium-silicon avalanche photodetector according to an embodiment of the present invention.
The avalanche amplification region 12 is arranged on the upper surface of one end of the charge collection region 13;
the first ohmic contact layer 11 is arranged on a side of the avalanche amplification region 12 facing away from the charge collection region 13.
The structure of the other regions is the same as that shown in fig. 2.
In this embodiment, the avalanche amplification region 12 is formed in an epitaxial layer, so that the thickness of the avalanche amplification region 12 is more uniform, which is beneficial to obtaining a larger avalanche current, and further improves the device performance of the germanium-silicon avalanche photodetector.
Further, based on the above-mentioned embodiment of the present invention, referring to fig. 6, fig. 6 is a schematic structural diagram of another specific germanium-silicon avalanche photodetector according to an embodiment of the present invention.
The avalanche amplification region 12 is disposed on the side of the lower surface of the charge collection region 13;
the first ohmic contact layer 11 is partially embedded into the avalanche amplification region 12.
The structure of the other regions is the same as that shown in fig. 2.
In this embodiment, based on different design requirements, the avalanche amplification region 12 can also be disposed on the side of the lower surface of the charge collection region 13, which is also beneficial to obtain larger avalanche current, and further improves the device performance of the germanium-silicon avalanche photodetector.
Further, based on the above-mentioned embodiment of the present invention, referring to fig. 7, fig. 7 is a schematic structural diagram of another specific germanium-silicon avalanche photodetector according to an embodiment of the present invention.
The avalanche amplification region 12 includes: a first partial avalanche amplification region 121 and a second partial avalanche amplification region 122;
the first ohmic contact layer 11 includes: a first portion of the first ohmic contact layer 111 and a second portion of the first ohmic contact layer 112;
the first partial avalanche amplification region 121 is disposed on the upper surface of one end of the charge collection region 13; the first partial first ohmic contact layer 111 is disposed on a side of the first partial avalanche amplification region 121 facing away from the charge collection region 13;
the second partial avalanche amplification region 122 is disposed on the side of the lower surface of the charge collection region 13; the second portion of the first ohmic contact layer 112 is partially embedded into the avalanche amplification region 122.
The structure of the other regions is the same as that shown in fig. 2.
In this embodiment, the structure of the frame portion of the dotted line can be used as a complete Si-APD structure, which can perform an avalanche amplification function, thereby improving the device performance of the germanium-silicon avalanche photodetector.
Further, based on the above-mentioned embodiment of the present invention, referring to fig. 8, fig. 8 is a schematic structural diagram of another specific germanium-silicon avalanche photodetector according to an embodiment of the present invention.
The avalanche amplification region 12 surrounds the sidewall of the charge collection region 13;
the first ohmic contact layer 11 surrounds the sidewall of the avalanche amplification region 12;
the germanium-silicon avalanche photodetector further comprises:
a Ge absorption region 15 disposed in a central region of the charge collection region 13;
a second ohmic contact layer 16 disposed on a side of the Ge absorption region 15 facing away from the charge collection region 13;
the control gate structure 14 is disposed on the charge collection region 13 and surrounds the Ge absorption region 15, and a space exists between the control gate structure 14 and the Ge absorption region 15;
a dielectric layer 17 disposed between said control gate structure 14 and said charge collection region 13;
a third ohmic contact layer 18 disposed on a surface of the control gate structure 14.
In the embodiment, based on different design requirements, a disc structure with the Ge absorption region 15 as the center is formed, so that carrier transport is more uniform, and the device performance of the germanium-silicon avalanche photodetector is further improved.
Further, based on the above-mentioned embodiment of the present invention, referring to fig. 9, fig. 9 is a schematic structural diagram of another specific germanium-silicon avalanche photodetector according to an embodiment of the present invention.
The charge collection region 13 includes: a first partial charge collection region 131 and a second partial charge collection region 132; the avalanche amplification region 12 includes: a first partial avalanche amplification region 121 and a second partial avalanche amplification region 122; the first ohmic contact layer 11 includes: a first portion of the first ohmic contact layer 111 and a second portion of the first ohmic contact layer 112;
the first partial avalanche amplification region 121 is disposed between the first partial charge collection region 131 and the second partial charge collection region 132;
the first portion of the first ohmic contact layer 111 is connected to the first portion of the charge collection region 131 through the second portion of the avalanche amplification region 122;
the second portion of the first ohmic contact layer 112 is connected to the second portion of the charge collection region 132;
the germanium-silicon avalanche photodetector further comprises:
a Ge absorption region 15 which completely covers said first partial avalanche amplification region 121, and partially covers said first partial charge collection region 131 and said second partial charge collection region 132;
a dielectric layer 17 disposed between the control gate structure 14 and the first portion of the charge collection region 131;
a second ohmic contact layer 18 disposed on a surface of the control gate structure 14.
In this embodiment, no electrode structure may be disposed on the Ge absorption region 15, and the electrode structure may be disposed on the second partial first ohmic contact layer 112.
Further, based on the above embodiments of the present invention, referring to fig. 10, fig. 10 is a schematic diagram of a charge collection region located below the Ge absorption region according to an embodiment of the present invention.
The first portion of the charge collection region 131 and the second portion of the charge collection region 132 under the Ge absorption region 15 are interdigitated.
Further, based on the above-mentioned embodiment of the present invention, referring to fig. 11, fig. 11 is a schematic structural diagram of another specific germanium-silicon avalanche photodetector according to an embodiment of the present invention.
The charge collection region 13 includes: a first partial charge collection region 131 and a second partial charge collection region 132; the first ohmic contact layer 11 includes: a first portion of the first ohmic contact layer 111 and a second portion of the first ohmic contact layer 112;
the first part of the first ohmic contact layer 111 and the second part of the first ohmic contact layer 112 are respectively positioned at two sides of the first part of the charge collection region 131;
the control gate structure 14 is positioned on the surface of the first part of the charge collection region 131;
the avalanche amplification region 12 is located on a side of the second partial first ohmic contact layer 112 facing away from the first partial charge collection region 131;
the second partial charge collection region 132 is located on a side of the avalanche amplification region 12 facing away from the second partial ohmic contact layer 112;
the germanium-silicon avalanche photodetector further comprises:
a Ge-absorbing region 15 disposed on a surface of said second portion of the charge collection region 132;
a second ohmic contact layer 16 disposed on a side of the Ge-absorbing region 15 facing away from the second partial charge collection region 132;
a dielectric layer 17 disposed between the control gate structure 14 and the first portion of the charge collection region 131;
a third ohmic contact layer 18 disposed on a surface of the control gate structure 14.
In this embodiment, the control gate structure 14 is disposed outside the Ge absorption region 15 based on different design requirements, thereby improving the device performance of the sige avalanche photodetector.
Further, based on the above-mentioned embodiment of the present invention, referring to fig. 12, fig. 12 is a schematic structural diagram of another specific germanium-silicon avalanche photodetector according to an embodiment of the present invention.
As shown in fig. 12, in the case of not using the control gate structure, the dark current of the sige avalanche photodetector can be reduced and the photoelectric conversion efficiency can be improved by adding an intrinsic material region 22, such as undoped Si or doped with a material different from that of the charge collection region 13.
The above detailed description of the germanium-silicon avalanche photodetector provided by the present invention is provided, and the principle and the implementation of the present invention are explained in the present document by applying specific examples, and the above description of the examples is only used to help understanding the method and the core idea of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
It should be noted that, in the present specification, the embodiments are all described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
It is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include or include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A silicon germanium avalanche photodetector, comprising:
an avalanche amplification region;
a first ohmic contact layer and a charge collection region respectively in contact with the avalanche amplification region;
a control gate structure connected to the charge collection region;
wherein the control gate structure is used for controlling the barrier height of the charge collection region.
2. The silicon germanium avalanche photodetector of claim 1 wherein, at the same level, the first ohmic contact layer is connected to one end of the charge collection region through the avalanche amplification region; the control gate structure is connected with the middle region of the charge collection region;
the germanium-silicon avalanche photodetector further comprises:
a Ge absorption region disposed on the other end surface of the charge collection region;
the second ohmic contact layer is arranged on one side, away from the charge collecting region, of the Ge absorption region;
a dielectric layer disposed between the control gate structure and the charge collection region;
a third ohmic contact layer disposed on a surface of the control gate structure.
3. The silicon germanium avalanche photodetector of claim 2 further comprising:
a first electrode disposed on the first ohmic contact layer;
a second electrode disposed on the second ohmic contact layer;
a third electrode disposed on the third ohmic contact layer.
4. The silicon germanium avalanche photodetector of claim 1 wherein the avalanche amplification region is disposed on the upper surface of one end of the charge collection region;
the first ohmic contact layer is disposed on a side of the avalanche amplification region facing away from the charge collection region.
5. The silicon germanium avalanche photodetector of claim 1, wherein the avalanche amplification region is disposed on the side of the lower surface of the charge collection region;
the first ohmic contact layer portion is embedded into the avalanche amplification region.
6. The silicon germanium avalanche photodetector of claim 1, wherein the avalanche amplification region comprises: a first partial avalanche amplification region and a second partial avalanche amplification region;
the first ohmic contact layer includes: a first portion of the first ohmic contact layer and a second portion of the first ohmic contact layer;
the first part of avalanche amplification region is arranged on the upper surface of one end of the charge collection region; the first part of the first ohmic contact layer is arranged on one side of the first part of the avalanche amplification region, which faces away from the charge collection region;
the second part of the avalanche amplification region is arranged on one side of the lower surface of the charge collection region; the second portion of the first ohmic contact layer portion is embedded into the avalanche amplification region.
7. The silicon germanium avalanche photodetector of claim 1 wherein the avalanche amplification region surrounds the sidewalls of the charge collection region;
the first ohmic contact layer surrounds the side wall of the avalanche amplification region;
the germanium-silicon avalanche photodetector further comprises:
the Ge absorption region is arranged in the central region of the charge collection region;
the second ohmic contact layer is arranged on one side, away from the charge collecting region, of the Ge absorption region;
the control gate structure is arranged on the charge collection region and surrounds the Ge absorption region, and a gap is reserved between the control gate structure and the Ge absorption region;
a dielectric layer disposed between the control gate structure and the charge collection region;
a third ohmic contact layer disposed on a surface of the control gate structure.
8. The silicon germanium avalanche photodetector of claim 1 wherein the charge collection region comprises: a first portion of the charge collection region and a second portion of the charge collection region; the avalanche amplification region includes: a first partial avalanche amplification region and a second partial avalanche amplification region; the first ohmic contact layer includes: a first portion of the first ohmic contact layer and a second portion of the first ohmic contact layer;
said first partial avalanche amplification region is disposed between said first partial charge collection region and said second partial charge collection region;
the first part of the first ohmic contact layer is connected with the first part of the charge collecting region through the second part of the avalanche amplification region;
the second part of the first ohmic contact layer is connected with the second part of the charge collecting region;
the germanium-silicon avalanche photodetector further comprises:
a Ge absorption region fully covering said first portion of the avalanche amplification region and partially covering said first portion of the charge collection region and said second portion of the charge collection region;
a dielectric layer disposed between the control gate structure and the first portion of the charge collection region;
and the second ohmic contact layer is arranged on the surface of the control gate structure.
9. The germanium-silicon avalanche photodetector of claim 8, wherein the first and second portions of charge collection regions under the Ge absorption region are interdigitated.
10. The silicon germanium avalanche photodetector of claim 1 wherein the charge collection region comprises: a first portion of the charge collection region and a second portion of the charge collection region; the first ohmic contact layer includes: a first portion of the first ohmic contact layer and a second portion of the first ohmic contact layer;
the first part of the first ohmic contact layer and the second part of the first ohmic contact layer are respectively positioned at two sides of the first part of the charge collecting region;
the control gate structure is positioned on the surface of the first part of the charge collection area;
the avalanche amplification region is positioned on one side of the second part of the first ohmic contact layer, which faces away from the first part of the charge collection region;
the second part of the charge collection region is positioned on one side of the avalanche amplification region, which faces away from the second part of the ohmic contact layer;
the germanium-silicon avalanche photodetector further comprises:
a Ge-absorbing region disposed on a surface of said second portion of the charge collection region;
a second ohmic contact layer disposed on a side of the Ge-absorbing region facing away from the second partial charge collection region;
a dielectric layer disposed between the control gate structure and the first portion of the charge collection region;
a third ohmic contact layer disposed on a surface of the control gate structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011403965.7A CN112531067B (en) | 2020-12-02 | 2020-12-02 | Germanium-silicon avalanche photodetector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011403965.7A CN112531067B (en) | 2020-12-02 | 2020-12-02 | Germanium-silicon avalanche photodetector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112531067A true CN112531067A (en) | 2021-03-19 |
| CN112531067B CN112531067B (en) | 2022-06-28 |
Family
ID=74997470
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011403965.7A Active CN112531067B (en) | 2020-12-02 | 2020-12-02 | Germanium-silicon avalanche photodetector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112531067B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115224138A (en) * | 2022-06-17 | 2022-10-21 | 浙江大学 | Horizontal pull-through type germanium-silicon avalanche photodetector |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61170079A (en) * | 1985-01-23 | 1986-07-31 | Toshiba Corp | Semiconductor light-receiving element |
| JPH03228373A (en) * | 1990-02-02 | 1991-10-09 | Hitachi Ltd | Solid state image pickup device |
| US20060202254A1 (en) * | 2005-03-10 | 2006-09-14 | Li-Shyue Lai | Multi-level flash memory cell capable of fast programming |
| US20080136945A1 (en) * | 2006-12-06 | 2008-06-12 | Altasens, Inc. | Apparatus and method for reducing dark current |
| US20090167910A1 (en) * | 2007-12-10 | 2009-07-02 | Commissariat A L' Energie Atomique | Photosensitive microelectronic device with avalanche multipliers |
| CN103165628A (en) * | 2011-12-14 | 2013-06-19 | 南京大学 | Multifunctional exposure imaging method based on composite dielectric grating metal-oxide-semiconductor field-effect transistor (MOSFET) light-sensitive detector |
| US20140319638A1 (en) * | 2011-10-20 | 2014-10-30 | Agency For Science, Technology And Research | Avalanche photodiode |
| CN109860315A (en) * | 2019-02-27 | 2019-06-07 | 吉林大学 | A kind of avalanche photodide |
| CN109904274A (en) * | 2019-02-27 | 2019-06-18 | 吉林大学 | A kind of germanium silicon photodetector |
| US20190229227A1 (en) * | 2018-01-23 | 2019-07-25 | Lumentum Operations Llc | Bias control structure for avalanche photodiodes |
-
2020
- 2020-12-02 CN CN202011403965.7A patent/CN112531067B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61170079A (en) * | 1985-01-23 | 1986-07-31 | Toshiba Corp | Semiconductor light-receiving element |
| JPH03228373A (en) * | 1990-02-02 | 1991-10-09 | Hitachi Ltd | Solid state image pickup device |
| US20060202254A1 (en) * | 2005-03-10 | 2006-09-14 | Li-Shyue Lai | Multi-level flash memory cell capable of fast programming |
| US20080136945A1 (en) * | 2006-12-06 | 2008-06-12 | Altasens, Inc. | Apparatus and method for reducing dark current |
| US20090167910A1 (en) * | 2007-12-10 | 2009-07-02 | Commissariat A L' Energie Atomique | Photosensitive microelectronic device with avalanche multipliers |
| US20140319638A1 (en) * | 2011-10-20 | 2014-10-30 | Agency For Science, Technology And Research | Avalanche photodiode |
| CN103165628A (en) * | 2011-12-14 | 2013-06-19 | 南京大学 | Multifunctional exposure imaging method based on composite dielectric grating metal-oxide-semiconductor field-effect transistor (MOSFET) light-sensitive detector |
| US20190229227A1 (en) * | 2018-01-23 | 2019-07-25 | Lumentum Operations Llc | Bias control structure for avalanche photodiodes |
| CN109860315A (en) * | 2019-02-27 | 2019-06-07 | 吉林大学 | A kind of avalanche photodide |
| CN109904274A (en) * | 2019-02-27 | 2019-06-18 | 吉林大学 | A kind of germanium silicon photodetector |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115224138A (en) * | 2022-06-17 | 2022-10-21 | 浙江大学 | Horizontal pull-through type germanium-silicon avalanche photodetector |
| CN115224138B (en) * | 2022-06-17 | 2023-12-08 | 浙江大学 | Horizontal pull-through germanium-silicon avalanche photodetector |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112531067B (en) | 2022-06-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101947088B1 (en) | Avalanche photodetector | |
| US20050051861A1 (en) | Avalanche photo-detector with high saturation power and high gain-bandwidth product | |
| CN105742397A (en) | Broadband photodiode for detection from visible light to infrared light | |
| US20130292741A1 (en) | High Performance GeSi Avalanche Photodiode Operating Beyond Ge Bandgap Limits | |
| CN104576786B (en) | Novel zero volt response avalanche photodetector chip and preparation method thereof | |
| CN201885758U (en) | Avalanche photoelectric detector and optical energy detecting device | |
| US7582920B2 (en) | Apparatus comprising an avalanche photodiode | |
| CN109904274B (en) | Germanium-silicon photoelectric detector | |
| CN210136887U (en) | Waveguide type photoelectric detector | |
| CN111211182A (en) | Waveguide type photoelectric detector and manufacturing method thereof | |
| CN112531067B (en) | Germanium-silicon avalanche photodetector | |
| US5500550A (en) | Photoelectric converting device | |
| US5459332A (en) | Semiconductor photodetector device | |
| CN204067379U (en) | Novel zero volt response avalanche photodetector chip | |
| CN110890436A (en) | Waveguide type GeSn photoelectric transistor and manufacturing method thereof | |
| EP1470574B1 (en) | High speed pin photodiode with increased responsivity | |
| CN109860315B (en) | Avalanche photodiode | |
| CN115224138B (en) | Horizontal pull-through germanium-silicon avalanche photodetector | |
| CN114762131A (en) | Avalanche photodiode | |
| US20040036146A1 (en) | Phototransistor device with fully depleted base region | |
| CN115832095A (en) | Germanium-silicon photoelectric detector | |
| US11374187B1 (en) | Graphene enhanced SiGe near-infrared photodetectors and methods for constructing the same | |
| CN105206686A (en) | Optical waveguide detector capable of eliminating parasitic capacitance | |
| Wang et al. | Investigation of high-speed Si photodetectors in standard CMOS technology | |
| Yi et al. | Colloidal Quantum Dot Enhanced Short-Wavelength Infrared Absorption of Avalanche Photodetectors |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |