Nothing Special   »   [go: up one dir, main page]

CN112397465A - Chip heat radiation structure - Google Patents

Chip heat radiation structure Download PDF

Info

Publication number
CN112397465A
CN112397465A CN202011516736.6A CN202011516736A CN112397465A CN 112397465 A CN112397465 A CN 112397465A CN 202011516736 A CN202011516736 A CN 202011516736A CN 112397465 A CN112397465 A CN 112397465A
Authority
CN
China
Prior art keywords
heat
chip
heat sink
radiating fin
heat dissipation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202011516736.6A
Other languages
Chinese (zh)
Inventor
孙涛
吕维亮
叶学亮
程进
潘栋
于让尘
包抗生
韩也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xifeng Photoelectric Technology Nanjing Co ltd
Original Assignee
Xifeng Photoelectric Technology Nanjing Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xifeng Photoelectric Technology Nanjing Co ltd filed Critical Xifeng Photoelectric Technology Nanjing Co ltd
Priority to CN202011516736.6A priority Critical patent/CN112397465A/en
Publication of CN112397465A publication Critical patent/CN112397465A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • H01L23/3672Foil-like cooling fins or heat sinks

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The invention discloses a chip heat dissipation structure, which comprises a heat conduction layer, a heat dissipation sheet and a heat conduction pad, wherein the heat conduction layer is directly contacted with a heat source on a medium substrate in a chip; the heat conduction layer is positioned between the radiating fin and the medium substrate and covers a heat source on the medium substrate; the radiating fin and the medium substrate are fixed through fixing glue; the heat conducting pad covers the front surface of the radiating fin, and the metal shell of the chip is attached to the heat conducting pad for packaging. The invention has the advantages that the heat-conducting silicone grease or liquid alloy is added in the middle of the metal radiating fin close to the heat source, and the fixing glue is added at the four corners of the metal radiating fin, so that the metal radiating fin is directly contacted with the heat source such as an integrated circuit or an optical device, and the thickness of the heat-conducting silicone grease or liquid alloy is greatly reduced. The heat conducting pad is contacted with the metal radiating fin with larger area, and the thermal resistance is in direct proportion to the thickness and in inverse proportion to the area, so that the total thermal resistance is greatly reduced, and the heat conducting pad has higher practical value.

Description

Chip heat radiation structure
Technical Field
The invention relates to a chip heat radiation structure, and belongs to the field of chip manufacturing.
Background
With the development of communication technology, the speed of optical devices is doubled, and the electric power of the optical transceiver module is also increased more and more. Miniaturization of optical transceiver modules and high power of devices present challenges to thermal management inside the modules.
The original heat dissipation scheme adopts a single-layer heat conduction pad for heat dissipation. The heat conducting pad is directly contacted with the integrated circuit or the optical device, and the other surface of the heat conducting pad is contacted with the metal shell. Due to the structural requirement, the heat conduction pad has to have a certain compression ratio to compensate the tolerance of each part, and the thickness of the heat conduction pad is required, so that the heat conduction pad has to have a certain thickness. However, the thermal resistance of the thermal pad is proportional to the thickness, that is, the greater the thickness of the thermal pad, the greater the thermal resistance of the thermal pad, and the greater the thermal resistance of the thermal pad, so that the purpose of good heat dissipation cannot be achieved by the heat source directly contacting with the thermal pad.
Disclosure of Invention
The invention provides a chip heat radiation structure aiming at the problem of a heat radiation scheme of single-layer heat conduction pad heat radiation, and the specific technical scheme is as follows:
a chip heat dissipation structure comprises a heat conduction layer, a heat dissipation sheet and a heat conduction pad which are in direct contact with a heat source on a medium substrate in a chip, wherein two surfaces of the heat dissipation sheet are defined as a front surface and a back surface respectively; the heat conduction layer is positioned between the radiating fin and the medium substrate and covers a heat source on the medium substrate; the radiating fin and the medium substrate are fixed through fixing glue; the heat conducting pad covers the front surface of the radiating fin, and the metal shell of the chip is attached to the heat conducting pad for packaging.
According to the technical scheme, the heat conducting layer is added in the middle of the metal radiating fin close to the heat source on the medium substrate in the chip, the fixed glue is reinforced at the edge of the metal radiating fin and directly contacts the heat source such as an integrated circuit or an optical device, and the thickness of the heat conducting layer is greatly reduced. The heat conducting pad is contacted with the metal radiating fin with larger area, and the thermal resistance is in direct proportion to the thickness and in inverse proportion to the area, so that the total thermal resistance is greatly reduced, and the heat conducting pad has higher practical value.
In a further preferred embodiment of the present invention, the heat conducting layer is a heat conducting silicone layer or a liquid alloy layer.
Further preferably, in the technical solution of the present invention, the thickness of the heat conducting layer is less than 0.2 mm.
Preferably, the heat sink is provided with a plurality of round holes filled with fixing glue, and the heat sink is fixed on the surface of the medium substrate through the fixing glue. Because the heat-conducting silicone grease or liquid alloy with good heat conductivity coefficient can not fix the radiating fin, an additional spring or screw is needed to fix the radiating fin, and the spring or screw is difficult to install in the narrow space of the optical module; the heat sink can be conveniently fixed with glue, but the heat conductivity of such glue is poor. Therefore, the four corners of the metal radiating fin are provided with the round holes, and the fixing glue is added in the round holes to be directly contacted with heat sources such as an integrated circuit or an optical device, so that the thickness of the heat conducting layer is greatly reduced.
Preferably, the edge of the back surface of the heat sink is provided with an abdicating notch, the abdicating notch is vertically provided with a plurality of supporting legs, and the tail ends of all the supporting legs are supported on the surface of the medium substrate. The design of the abdicating notch on the back of the radiating fin aims to increase the installation space of the medium substrate.
In a further preferable mode of the technical scheme of the invention, the radiating fin is a rectangular body, two abdicating notches are arranged on the back surface of the radiating fin in parallel, four supporting legs are arranged at the two abdicating notches, and the four supporting legs are arranged at the positions of four corners of the radiating fin of the rectangular body. The supporting legs are arranged to play a role in assisting in fixing the radiating fins.
Further preferably, the tail ends of the supporting legs and the surface of the medium substrate are fixed by dispensing.
In a further preferred embodiment of the present invention, the heat sink and the support legs are made of copper or copper alloy, and the use of copper or copper alloy better refers to the heat conductivity.
According to the technical scheme of the invention, the front surface of the radiating fin is etched with a plurality of radiating fins in parallel. In the case of air cooling, heat can be dissipated through the heat dissipating fins.
Compared with the prior art, the invention has the following beneficial effects:
the chip heat radiation structure adopts two layers of heat radiation, the heat conduction silicone grease or liquid alloy is added between the metal heat radiation fins close to the heat source, and the fixing glue is added at the four corners, so that the metal heat radiation fins are directly contacted with the heat source such as an integrated circuit or an optical device, and the thickness of the heat conduction silicone grease or liquid alloy is greatly reduced. The heat conducting pad is contacted with the metal radiating fin with larger area, and the thermal resistance is in direct proportion to the thickness and in inverse proportion to the area, so that the total thermal resistance is greatly reduced, and the heat conducting pad has higher practical value.
Drawings
Fig. 1 is a perspective view of a chip heat dissipation structure.
Fig. 2 is a front view of the heat dissipation structure of the chip.
Fig. 3 is a first perspective view of the heat sink.
Fig. 4 is a second perspective view of the heat sink.
Fig. 5 is a schematic view of a heat sink mounted on a heat source on a dielectric substrate within a chip.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be further described in detail with reference to fig. 1-5 and the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
As shown in fig. 1 and 2, a chip heat dissipation structure includes a heat conductive layer in direct contact with a heat source 2 on a dielectric substrate 1 within a chip, a heat sink 3, and a heat conductive pad 4. Defining two surfaces of the radiating fin 3 as a front surface and a back surface respectively, wherein the back surface of the radiating fin 3 is attached to the surface of the medium substrate and is positioned at a heat source; the heat conduction layer is positioned between the radiating fin 3 and the medium substrate and covers a heat source on the medium substrate; the radiating fin 3 and the medium substrate are fixed through fixing glue; the heat conducting pad 4 covers the front surface of the radiating fin 3, and the metal shell 5 of the chip is attached to the heat conducting pad 4 for packaging.
According to the technical scheme, the radiating fins 3 are made of copper or copper alloy, and the heat conductivity coefficient of copper is high, so that heat of the heat source 2 is conducted out.
In the present embodiment, the heat source 2 on the dielectric substrate 1 in the chip refers to an integrated circuit or an optical device mounted on the dielectric substrate 1 in the chip, and the integrated circuit or the optical device generates heat during operation, and is therefore referred to as the heat source 2.
In this embodiment, the chip heat dissipation structure design can effectively reduce the technical problem that the thermal resistance is large because of the requirement of the thickness of the heat conduction pad: two sets of contradictions must be resolved to reduce the thermal resistance:
first, there are tolerances on the various parts within the chip, and also some tolerance on the thickness between the integrated circuit or optical device and the metal housing, but the thermal resistance is proportional to the thickness. In order to reduce the thermal resistance, the thinner the thickness of the heat dissipating material is, the better, the zero is preferable. The thickness of the material close to zero cannot compensate the thickness tolerance between the integrated circuit or the optical device and the metal shell, and once the thickness tolerance cannot be compensated, the thermal resistance will rise sharply to damage the device.
The technical scheme of the embodiment provides for solving the first contradiction, and adopts a structure of a metal radiating fin and a heat conducting pad; and a heat conduction layer is added in the middle of the metal radiating fin close to the heat source, and the heat conduction layer is a heat conduction silicone layer or a liquid alloy layer.
Secondly, the heat-conducting silicone grease or liquid alloy with good heat conductivity coefficient cannot fix the metal radiating fin, an additional spring or screw is needed to fix the radiating fin, and the spring or screw is difficult to install in the narrow space of the optical module; the heat sink can be conveniently fixed with glue, but the heat conductivity of such glue is poor.
In order to solve the second contradiction, the present embodiment proposes that the four corners of the metal heat sink are directly contacted with heat sources such as an integrated circuit or an optical device by adding the fixing glue, specifically: a plurality of round holes 34 are formed in the radiating fin 3, fixing glue is filled in the round holes, and the radiating fin 3 is fixed on the surface of the medium substrate through the fixing glue. By the design, the thickness of the heat-conducting silicone grease or the liquid alloy is greatly reduced. The thickness of the heat conducting layer in this embodiment is less than 0.2 mm. Finally, the heat conducting pad is in contact with the front surface of the metal radiating fin with a larger area, the thermal resistance is in direct proportion to the thickness and in inverse proportion to the area, so that the total thermal resistance is greatly reduced, and the heat conducting pad has a larger practical value.
The heat-conducting silicone grease or the liquid alloy mentioned in the technical scheme of the invention are all known heat-conducting layer materials with good heat-conducting systems in the technical field.
Further, in consideration of the arrangement of the heat source 2 on the dielectric substrate 1 in the chip, the metal heat sink 3 is provided with a relief notch 32 at the edge of the back surface of the heat sink 3, a plurality of support legs 31 are vertically provided at the relief notch 32, and the ends of all the support legs 31 are supported on the surface of the dielectric substrate. The end of the support leg 31 is fixed to the surface of the media substrate 1 by dispensing.
As shown in fig. 3 and 4, in the present embodiment, the heat sink 3 is a rectangular body, two abdicating notches 32 are arranged in parallel on the back surface of the heat sink 3, four supporting legs 31 are arranged at the two abdicating notches 32, and the four supporting legs 31 are located at the four corners of the heat sink 3 of the rectangular body. The ends of the four support legs 31 are fixed to the surface of the medium substrate 1 by dispensing.
As shown in fig. 3, 4 and 5, in the present embodiment, four circular holes 34 are always provided at four corners of the heat sink 3, fixing glue is injected into the circular holes 34, and the heat sink 3 is fixed on the dielectric substrate 1 in the chip by the fixing glue.
In this embodiment, the heat sink 3 is made of copper or copper alloy, and the support legs 31 are made of copper or copper alloy.
As shown in fig. 3 and 4, a plurality of heat dissipating fins 33 are etched in parallel on the front surface of the heat sink 3, and in the case of air cooling, heat can be dissipated through the heat dissipating fins 33.
The chip heat radiation structure provided by the embodiment adopts two layers of heat radiation, the heat conduction silicone grease or liquid alloy is added in the middle of the metal heat radiation sheet close to the heat source, and the four corners of the metal heat radiation sheet are added with the fixing glue, so that the metal heat radiation sheet is directly contacted with the heat sources such as an integrated circuit or an optical device, and the thickness of the heat conduction silicone grease or liquid alloy is greatly reduced. The heat conducting pad is contacted with the metal radiating fin with larger area, and the thermal resistance is in direct proportion to the thickness and in inverse proportion to the area, so that the total thermal resistance is greatly reduced, and the heat conducting pad has higher practical value.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.

Claims (9)

1.一种芯片散热结构,其特征在于,包括与芯片内的介质基片上的热源直接接触的导热层、散热片(3)和导热垫(4),定义散热片(3)的两个表面分别为正面和背面,散热片(3)的背面贴合在介质基片的面上,且位于热源处;导热层位于散热片(3)与介质基片之间,导热层覆盖在介质基片上的热源处;散热片(3)与介质基片之间通过固定胶固定;导热垫(4)覆盖在散热片(3)的正面上,芯片的金属外壳(5)贴合导热垫(4)封装。1. A chip heat dissipation structure, characterized in that it comprises a heat conducting layer, a heat sink (3) and a heat conducting pad (4) in direct contact with a heat source on a dielectric substrate in the chip, defining two surfaces of the heat sink (3) The front side and the back side are respectively, the back side of the heat sink (3) is attached to the surface of the dielectric substrate and is located at the heat source; the thermal conductive layer is located between the heat sink (3) and the dielectric substrate, and the thermal conductive layer is covered on the dielectric substrate the heat source of the chip; the heat sink (3) and the dielectric substrate are fixed by fixing glue; the thermal pad (4) is covered on the front side of the heat sink (3), and the metal shell (5) of the chip is attached to the thermal pad (4) package. 2.根据权利要求1所述的芯片散热结构,其特征在于,导热层为导热硅脂层或者液态合金层。2 . The chip heat dissipation structure according to claim 1 , wherein the thermally conductive layer is a thermally conductive silicone grease layer or a liquid alloy layer. 3 . 3.根据权利要求2所述的芯片散热结构,其特征在于,导热层的厚度小于0.2mm。3 . The chip heat dissipation structure according to claim 2 , wherein the thickness of the heat conducting layer is less than 0.2 mm. 4 . 4.根据权利要求1所述的芯片散热结构,其特征在于,在散热片(3)上开设多个圆孔,圆孔内填充固定胶,散热片(3)通过固定胶固定在介质基片的面上。4 . The chip heat dissipation structure according to claim 1 , wherein a plurality of circular holes are opened on the heat sink ( 3 ), the circular holes are filled with fixing glue, and the heat sink ( 3 ) is fixed on the dielectric substrate by the fixing glue. 5 . on the face. 5.根据权利要求1或4所述的芯片散热结构,其特征在于,散热片(3)背面的边沿处设置让位缺口(32),在让位缺口(32)处竖直设置多个支撑支腿(31),所有支撑支腿(31)的末端支撑在介质基片的面上。5. The chip heat dissipation structure according to claim 1 or 4, characterized in that a vacant gap (32) is provided at the edge of the back of the heat sink (3), and a plurality of supports are vertically arranged at the vacant gap (32). Supporting legs (31), the ends of all supporting legs (31) are supported on the surface of the medium substrate. 6.根据权利要求5所述的芯片散热结构,其特征在于,散热片(3)为矩形体,散热片(3)背面平行设置两条让位缺口(32),两条让位缺口(32)处设置四根支撑支腿(31),四根支撑支腿(31)处于矩形体的散热片(3)的四个角的位置处。6 . The chip heat dissipation structure according to claim 5 , wherein the heat sink ( 3 ) is a rectangular body, and the back of the heat sink ( 3 ) is provided with two parallel gaps ( 32 ), and two gap gaps ( 32 ). ) are provided with four support legs (31), and the four support legs (31) are located at the four corners of the heat sink (3) of the rectangular body. 7.根据权利要求5所述的芯片散热结构,其特征在于,支撑支腿(31)的末端与介质基片的面之间点胶固定。7 . The chip heat dissipation structure according to claim 5 , wherein the ends of the support legs ( 31 ) and the surface of the dielectric substrate are glued and fixed. 8 . 8.根据权利要求5所述的芯片散热结构,其特征在于,散热片(3)和支撑支腿(31)都采用铜或铜合金制成。8. The chip heat dissipation structure according to claim 5, characterized in that, both the heat sink (3) and the support legs (31) are made of copper or copper alloy. 9.根据权利要求1所述的芯片散热结构,其特征在于,散热片(3)的正面上平行刻蚀多条散热翅片(33)。9. The chip heat dissipation structure according to claim 1, wherein a plurality of heat dissipation fins (33) are etched in parallel on the front surface of the heat dissipation fin (3).
CN202011516736.6A 2020-12-21 2020-12-21 Chip heat radiation structure Pending CN112397465A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011516736.6A CN112397465A (en) 2020-12-21 2020-12-21 Chip heat radiation structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202011516736.6A CN112397465A (en) 2020-12-21 2020-12-21 Chip heat radiation structure

Publications (1)

Publication Number Publication Date
CN112397465A true CN112397465A (en) 2021-02-23

Family

ID=74625327

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011516736.6A Pending CN112397465A (en) 2020-12-21 2020-12-21 Chip heat radiation structure

Country Status (1)

Country Link
CN (1) CN112397465A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113484471A (en) * 2021-07-05 2021-10-08 郑州水伟环境科技有限公司 Air exhaust chamber structure of micro thermal power pump of gas sensor
CN117293103A (en) * 2023-10-13 2023-12-26 苏州融睿电子科技有限公司 Chip packaging structure
EP4357826A1 (en) * 2022-10-19 2024-04-24 Adtran Networks SE Electronic module, especially optical transceiver module

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07211825A (en) * 1994-01-24 1995-08-11 Sumitomo Kinzoku Ceramics:Kk Ceramic package for encapsulating semiconductor element and package substrate
JPH10189841A (en) * 1996-12-25 1998-07-21 Nec Shizuoka Ltd Heat sink
CN2632849Y (en) * 2003-06-09 2004-08-11 旭扬热导股份有限公司 Chip structure with reinforced colloidal wells
US20050068739A1 (en) * 2003-09-26 2005-03-31 Arvelo Amilcar R. Method and structure for cooling a dual chip module with one high power chip
JP2005217003A (en) * 2004-01-28 2005-08-11 Kyocera Corp Package for storing semiconductor element
CN201590413U (en) * 2009-12-07 2010-09-22 中兴通讯股份有限公司 Radiating structure of flip chip
JP2012074612A (en) * 2010-09-29 2012-04-12 Mitsubishi Materials Corp Manufacturing device and manufacturing method of substrate for power module
JP2013118299A (en) * 2011-12-05 2013-06-13 Mitsubishi Materials Corp Substrate for power module
CN205716741U (en) * 2016-06-20 2016-11-23 创维液晶器件(深圳)有限公司 Spacing pad and side incident type display device
CN107946263A (en) * 2017-11-22 2018-04-20 华进半导体封装先导技术研发中心有限公司 A kind of high efficiency and heat radiation encapsulating structure and its manufacture method based on graphene thermal boundary layer
WO2018223934A1 (en) * 2017-06-05 2018-12-13 深圳市鸿富诚屏蔽材料有限公司 Heat sink and manufacturing method therefor
WO2023071671A1 (en) * 2021-10-26 2023-05-04 北京比特大陆科技有限公司 Chip module and circuit board

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07211825A (en) * 1994-01-24 1995-08-11 Sumitomo Kinzoku Ceramics:Kk Ceramic package for encapsulating semiconductor element and package substrate
JPH10189841A (en) * 1996-12-25 1998-07-21 Nec Shizuoka Ltd Heat sink
CN2632849Y (en) * 2003-06-09 2004-08-11 旭扬热导股份有限公司 Chip structure with reinforced colloidal wells
US20050068739A1 (en) * 2003-09-26 2005-03-31 Arvelo Amilcar R. Method and structure for cooling a dual chip module with one high power chip
JP2005217003A (en) * 2004-01-28 2005-08-11 Kyocera Corp Package for storing semiconductor element
CN201590413U (en) * 2009-12-07 2010-09-22 中兴通讯股份有限公司 Radiating structure of flip chip
JP2012074612A (en) * 2010-09-29 2012-04-12 Mitsubishi Materials Corp Manufacturing device and manufacturing method of substrate for power module
JP2013118299A (en) * 2011-12-05 2013-06-13 Mitsubishi Materials Corp Substrate for power module
CN205716741U (en) * 2016-06-20 2016-11-23 创维液晶器件(深圳)有限公司 Spacing pad and side incident type display device
WO2018223934A1 (en) * 2017-06-05 2018-12-13 深圳市鸿富诚屏蔽材料有限公司 Heat sink and manufacturing method therefor
CN107946263A (en) * 2017-11-22 2018-04-20 华进半导体封装先导技术研发中心有限公司 A kind of high efficiency and heat radiation encapsulating structure and its manufacture method based on graphene thermal boundary layer
WO2023071671A1 (en) * 2021-10-26 2023-05-04 北京比特大陆科技有限公司 Chip module and circuit board

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113484471A (en) * 2021-07-05 2021-10-08 郑州水伟环境科技有限公司 Air exhaust chamber structure of micro thermal power pump of gas sensor
EP4357826A1 (en) * 2022-10-19 2024-04-24 Adtran Networks SE Electronic module, especially optical transceiver module
CN117293103A (en) * 2023-10-13 2023-12-26 苏州融睿电子科技有限公司 Chip packaging structure

Similar Documents

Publication Publication Date Title
CN213583120U (en) memory cooler
EP1528850B1 (en) Power electronic system with passive cooling
CN112397465A (en) Chip heat radiation structure
TWI731622B (en) Automotive electronic device
CN114764269B (en) Computing system and computing device
CN207612462U (en) A high thermal conductivity printed circuit board
CN112399787B (en) Power adapter
WO2023071671A1 (en) Chip module and circuit board
TW201204227A (en) Heat dissipation apparatus
TW201524278A (en) DC/DC power module and DC/DC power system assembly
JP2002050889A (en) Housing incorporating electronic component
CN208850120U (en) A kind of radiator
CN110060966B (en) Optical module
JP4438526B2 (en) Power component cooling system
CN107509365B (en) Ultrathin microwave assembly and heat pipe radiating device
CN209845602U (en) Elastic heat conducting structure
CN113115569A (en) Display panel, display device and buffering heat radiation structure
CN112292007A (en) Water-cooling heat dissipation device and electrical apparatus
CN202918629U (en) Printed circuit board cooling plate heat-dissipation structure
CN211403361U (en) Radiator, circuit board assembly and computing device
CN201166824Y (en) Heat sink for memory module
CN216057982U (en) Light and thin heat dissipation device for electrical equipment
CN114630571A (en) Optical module side heat radiation structure
CN210244274U (en) Heat sink device
CN222051749U (en) Chip heat dissipation structure and terminal equipment

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination