CN112151625B - Solar cell, production method and cell module - Google Patents
Solar cell, production method and cell module Download PDFInfo
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- CN112151625B CN112151625B CN202010923757.3A CN202010923757A CN112151625B CN 112151625 B CN112151625 B CN 112151625B CN 202010923757 A CN202010923757 A CN 202010923757A CN 112151625 B CN112151625 B CN 112151625B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000010408 film Substances 0.000 claims abstract description 118
- 229910052751 metal Inorganic materials 0.000 claims abstract description 117
- 239000002184 metal Substances 0.000 claims abstract description 117
- 239000010409 thin film Substances 0.000 claims abstract description 80
- 229910000314 transition metal oxide Inorganic materials 0.000 claims abstract description 79
- 239000000463 material Substances 0.000 claims abstract description 53
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 49
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 49
- 239000010703 silicon Substances 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 238000000034 method Methods 0.000 claims abstract description 23
- 239000010948 rhodium Substances 0.000 claims abstract description 20
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 18
- 239000010941 cobalt Substances 0.000 claims abstract description 18
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052703 rhodium Inorganic materials 0.000 claims abstract description 18
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 18
- 229910052738 indium Inorganic materials 0.000 claims abstract description 17
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- 238000002161 passivation Methods 0.000 claims description 38
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 9
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- 238000001755 magnetron sputter deposition Methods 0.000 claims description 7
- 238000005566 electron beam evaporation Methods 0.000 claims description 6
- 238000002207 thermal evaporation Methods 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 5
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- 229910000024 caesium carbonate Inorganic materials 0.000 claims description 4
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 4
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 4
- 239000000395 magnesium oxide Substances 0.000 claims description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 4
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 4
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 4
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 4
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 4
- 238000001017 electron-beam sputter deposition Methods 0.000 claims description 3
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 3
- 239000004408 titanium dioxide Substances 0.000 claims description 3
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 9
- 239000000969 carrier Substances 0.000 description 19
- 238000006243 chemical reaction Methods 0.000 description 8
- 230000009286 beneficial effect Effects 0.000 description 6
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- 238000010586 diagram Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
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- 238000010521 absorption reaction Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000002485 combustion reaction Methods 0.000 description 2
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- 238000006731 degradation reaction Methods 0.000 description 2
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
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- 229910000077 silane Inorganic materials 0.000 description 2
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- 238000002834 transmittance Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
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- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
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- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- JMOHEPRYPIIZQU-UHFFFAOYSA-N oxygen(2-);tantalum(2+) Chemical compound [O-2].[Ta+2] JMOHEPRYPIIZQU-UHFFFAOYSA-N 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
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- 230000005641 tunneling Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The invention provides a solar cell, a production method and a cell module, and relates to the technical field of photovoltaics. The solar cell includes: an N-type silicon substrate; the first transition metal oxide film is positioned on the light facing surface of the N-type silicon substrate; the metal film is positioned on the light facing surface of the first transition metal oxide film; the material of the metal film is selected from: at least one of cobalt, ruthenium, rhodium and indium; under the condition that the material of the metal film is selected from cobalt, the thickness of the metal film is 11.8nm-15nm; under the condition that the material of the metal film is selected from ruthenium, the thickness of the metal film is 6.59nm-15nm; in the case that the material of the metal thin film is selected from rhodium, the thickness of the metal thin film is 6.88nm-15nm; in the case that the material of the metal thin film is selected from indium, the thickness of the metal thin film is 8.65nm-15nm; the second transition metal oxide film is positioned on the light facing surface of the metal film; the front electrode is positioned on the light facing surface of the second transition metal oxide film; the back electrode is positioned on the backlight surface of the N-type silicon substrate. Simple process, low cost, high safety performance and low resistivity.
Description
Technical Field
The invention relates to the technical field of photovoltaics, in particular to a solar cell, a production method and a cell module.
Background
The solar cell adopting the carrier selective contact can reduce the processing temperature and improve the photoelectric conversion efficiency, so the solar cell is widely applied.
Currently, carrier selective contact solar cells typically employ pyrophoric, explosive silanes and toxic boron/phosphorous gas precursors to make the carrier selective contact. In the manufacturing engineering of the solar cell, the safety performance is poor, and the process is complex.
Disclosure of Invention
The invention provides a solar cell, a production method and a cell assembly, and aims to solve the problems of poor safety performance and complex process of manufacturing a solar cell with a carrier selective contact.
According to a first aspect of the present invention, there is provided a solar cell comprising:
an N-type silicon substrate;
the first transition metal oxide film is positioned on the light facing surface of the N-type silicon substrate;
the metal film is positioned on the light facing surface of the first transition metal oxide film; the material of the metal film is selected from: at least one of cobalt, ruthenium, rhodium and indium; in the case that the material of the metal thin film is selected from cobalt, the thickness of the metal thin film is 11.8nm-15nm; in the case that the material of the metal thin film is selected from ruthenium, the thickness of the metal thin film is 6.59nm-15nm; in the case that the material of the metal thin film is selected from rhodium, the thickness of the metal thin film is 6.88nm-15nm; in the case that the material of the metal thin film is selected from indium, the thickness of the metal thin film is 8.65nm-15nm;
the second transition metal oxide film is positioned on the light facing surface of the metal film;
the front electrode is positioned on the light facing surface of the second transition metal oxide film;
and the back electrode is positioned on the backlight surface of the N-type silicon substrate.
In the embodiment of the invention, the first transition metal oxide film, the metal film and the second transition metal oxide film which are positioned on the light-facing surface of the N-type silicon substrate are used as the emitter of the solar cell, so that spontaneous combustion and explosive silane and toxic gas are not needed, a simple and low-cost manufacturing method can be selected, the process is simple, the cost is reduced, the safety performance is high, and the solar cell is suitable for large-scale production. Meanwhile, an emitter is not required to be formed at high temperature and can be formed at the temperature of less than or equal to 200 ℃, the process is simple, the cost is reduced, and the heavy doping effect can be reduced. Meanwhile, the material of the metal film is selected from: the average free path of electrons of the metal film of the material is smaller than the thickness of the corresponding metal film, so that carriers cannot be obviously scattered and collided in the metal film or the emitting electrode, the resistivity is low, holes can be favorably passed through the carriers, electrons can be blocked, and the photoelectric conversion efficiency of the solar cell is improved. Meanwhile, the metal film is small in thickness, the light transmittance of incident light can be improved, the thickness of the absorption layer can be reduced, the light and thin structure is facilitated, and the cost is low. Optionally, the electron selection layer is located on a backlight surface of the N-type silicon substrate; the back electrode is positioned on a backlight surface of the electronic selection layer;
the material of the electron selective layer is selected from: doped with at least one of hydrogenated amorphous silicon, titanium oxide, zinc oxide, tantalum nitride, tantalum oxide, gallium oxide, lithium fluoride, magnesium oxide, niobium oxide, or cesium carbonate.
Optionally, the thickness of the electron selective layer is 1nm to 10nm.
Optionally, the first transition metal oxide thin film and the second transition metal oxide thin film are selected from: at least one of a molybdenum oxide film, a vanadium pentoxide film and a tungsten oxide film;
the thickness of the first transition metal oxide film is 10nm-20nm, and the thickness of the second transition metal oxide film is 20nm-50nm.
Optionally, the solar cell further includes: the transparent conducting layer is positioned on the backlight surface of the second transition metal oxide film; the thickness of the transparent conducting layer is 30um-200um.
Optionally, the solar cell further includes: a front passivation layer positioned between the N-type silicon substrate and the first transition metal oxide film;
and/or a back passivation layer positioned on a backlight surface of the N-type silicon substrate;
the front passivation layer and the back passivation layer are made of materials selected from the following: one of silicon dioxide, titanium dioxide, aluminum oxide and doped hydrogenated amorphous silicon;
the thicknesses of the front passivation layer and the back passivation layer are both 0.5nm-15nm.
According to a second aspect of the present invention, there is also provided a method for producing a solar cell, comprising:
providing an N-type silicon substrate;
depositing a first transition metal oxide film on the N-type silicon substrate;
depositing a metal film on the first transition metal oxide film; the material of the metal film is selected from: at least one of cobalt, ruthenium, rhodium and indium; in the case that the material of the metal thin film is selected from cobalt, the thickness of the metal thin film is 11.8nm-15nm; in the case that the material of the metal thin film is selected from ruthenium, the thickness of the metal thin film is 6.59nm-15nm; in the case that the material of the metal thin film is selected from rhodium, the thickness of the metal thin film is 6.88nm-15nm; in the case that the material of the metal thin film is selected from indium, the thickness of the metal thin film is 8.65nm-15nm;
depositing a second transition metal oxide film on the metal film;
arranging a front electrode on the second transition metal oxide film;
and arranging a back electrode on the backlight surface of the N-type silicon substrate.
Optionally, the metal film is obtained by a resistance type thermal evaporation method or a magnetron sputtering method;
the first transition metal oxide film and the second transition metal oxide film are obtained by adopting a resistance type thermal evaporation method, an electron beam evaporation method or a magnetron sputtering method.
Optionally, the front electrode is formed by screen printing, electron beam evaporation or sputtering;
the back electrode is formed by evaporation.
According to a third aspect of the present invention, there is also provided a battery assembly comprising: any of the foregoing solar cells.
The production method of the solar cell and the cell module have the same or similar beneficial effects as the solar cell.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments of the present invention will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained based on these drawings without inventive exercise.
Fig. 1 shows a schematic structural diagram of a first solar cell in an embodiment of the invention;
fig. 2 shows a schematic structural diagram of a second solar cell in an embodiment of the present invention.
Description of the figure numbering:
1-N type silicon substrate, 2-first transition metal oxide film, 3-metal film, 4-second transition metal oxide film, 5-front electrode, 6-back electrode, 7-front passivation layer, 8-back passivation layer and 9-electronic selection layer.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
In the embodiment of the present invention, referring to fig. 1, fig. 1 shows a schematic structural diagram of a first solar cell in the embodiment of the present invention. The solar cell includes: the structure comprises an N-type silicon substrate 1, a first transition metal oxide film 2, a metal film 3, a second transition metal oxide film 4, a front electrode 5 and a back electrode 6.
And the first transition metal oxide film 2 is positioned on the light facing surface of the N-type silicon substrate 1. The metal thin film 3 is located on the light-facing surface of the first transition metal oxide thin film 2. The material of the metal thin film 3 is selected from: at least one of cobalt (Co), ruthenium (Ru), rhodium (Rh) and indium (In). The second transition metal oxide thin film 4 is located on the light-facing surface of the metal thin film 3. The first transition metal oxide film 2, the metal film 3 and the second transition metal oxide film 4 which are positioned on the light-facing surface of the N-type silicon substrate 1 are used as emitting electrodes of the solar cell, spontaneous combustion and explosive silane and toxic gas are not needed, and then a simple and low-cost manufacturing method can be selected, so that the process is simple, the cost is reduced, and the safety performance is high. Meanwhile, the emitter is formed without high-temperature diffusion, the temperature is less than or equal to 200 ℃, the process is simple, the cost is reduced, and the heavy doping effect can be reduced.
Table 1 shows the electron mean free path for each of the various metals. The electron mean free path of a metal is the length of the path of a carrier without scattering in the metal. When the thickness of the metal film is larger than the electron mean free path, carriers can not be obviously scattered and collided in the metal film, and the resistivity is lower. Meanwhile, referring to table 1, the material of the metal thin film 3 is selected from: at least one of cobalt, ruthenium, rhodium and indium. The electron mean free path of cobalt is only 11.8/7.77nm, and under the condition that the material of the metal thin film 3 is selected from cobalt, the thickness h1 of the metal thin film 3 is 11.8nm-15nm and is greater than or equal to the electron mean free path of cobalt, so that carriers cannot be obviously scattered and collided in the metal thin film 3 or an emitter, the resistivity is low, holes can pass through the carriers, electrons can be blocked, and the photoelectric conversion efficiency of the solar cell is improved. The mean free path of electrons of ruthenium is only 6.59/4.88nm, and under the condition that the material of the metal film 3 is selected from ruthenium, the thickness h1 of the metal film 3 is 6.59nm-15nm and is greater than or equal to the mean free path of electrons of ruthenium, so that carriers cannot be obviously scattered and collided in the metal film 3 or an emitter, the resistivity is low, holes can pass through the carriers, electrons can be blocked, and the photoelectric conversion efficiency of the solar cell is improved. The electron mean free path of rhodium is only 6.88nm, under the condition that the material of the metal thin film 3 is selected from rhodium, the thickness h1 of the metal thin film 3 is 6.88nm-15nm and is larger than or equal to the electron mean free path of rhodium, so that carriers cannot be obviously scattered and collided in the metal thin film 3 or an emitter, the resistivity is low, holes can pass through the carriers, electrons can be blocked, and the photoelectric conversion efficiency of the solar cell is improved. The electron mean free path of the indium is only 8.65/8.16nm, and under the condition that the material of the metal film 3 is selected from indium, the thickness h1 of the metal film 3 is 8.65nm-15nm and is greater than or equal to the electron mean free path of the indium, so that carriers cannot be obviously scattered and collided in the metal film 3 or an emitter, the resistivity is low, holes can pass through the carriers, electrons can be blocked from passing through the carriers, and the photoelectric conversion efficiency of the solar cell is improved. The thickness h1 may be a dimension in a direction in which the N-type silicon substrate 1 and the first transition metal oxide thin film 2 are stacked. In summary, the thicknesses of the metal films 3 of the above materials are all greater than or equal to the corresponding electron mean free path, carriers do not undergo significant scattering and collision in the metal films 3 or the emitters, the resistivity is low, holes can pass through the carriers easily, electrons can be blocked from passing through the carriers, and the photoelectric conversion efficiency of the solar cell is improved. This application adopts the metal film 3 of the above-mentioned material of above-mentioned thickness scope, can reach the less resistivity of noble metal such as expensive gold, silver under bigger thickness, not only can reduce cost, and above-mentioned metal film's thickness is littleer moreover, can improve incident light's luminousness, can reduce the thickness of absorbed layer, does benefit to frivolousization, and is with low costs.
For example, when gold is used as the metal thin film, the electron mean free path of gold is 37.7nm, and the thickness of the metal thin film is 37.7nm or more, the carriers are not significantly scattered or collided in the metal thin film, and the resistivity is low. The thickness is large, so that the cost is high, the shading is not reduced, and the lightening and thinning of devices are not reduced. In the application, low resistivity under the condition that other metals are thick can be achieved within a small thickness range, and therefore the application is beneficial to reducing shading, improving the light transmittance of incident light, reducing the thickness of an absorption layer, and is beneficial to lightening and thinning and reducing cost.
Table 1 shows the electron mean free path for each of the various metals
| Metal | Corresponding electron mean free path (unit: nm) |
| Cobalt (Co) | 11.8/7.77 |
| Ruthenium (Ru) | 6.59/4.88 |
| Rhodium (Rh) | 6.88 |
| Indium (In) | 8.65/8.16 |
| Gold (Au) | 37.7 |
| Silver (Al) | 53.3 |
| Copper (Cu) | 39.9 |
Optionally, the first transition metal oxide thin film 2 and the second transition metal oxide thin film 4 are both selected from: molybdenum oxide (MoO) 3 ) Film, vanadium (V) pentoxide 2 O 5 ) Film, tungsten oxide (WO) 3 ) At least one of the films. The first transition metal oxide thin film 2 and the second transition metal oxide thin film 4 of the materials have high work functions (larger than 5 eV), can be used as a P-type material on an energy band structure, are different from an N-type silicon substrate 1 in energy bands, and can be used as an emitting electrode of the N-type silicon substrate 1 to selectively generate carriers. An emitter formed of a material having a band gap different from that of the N-type silicon substrate 1 selectively moves holes and blocks electrons from moving. The band gaps of the first transition metal oxide film 2 and the second transition metal oxide film 4 can be adjusted to be 5-7eV according to film forming conditions, so that the open-circuit voltage of the solar cell is improved. Preferably, the band gaps of the first transition metal oxide thin film 2 and the second transition metal oxide thin film 4 are larger than 6.5eV, which is advantageous for obtaining a high level of the electric fieldOpen circuit voltage, thereby improving battery efficiency.
The thickness of the first transition metal oxide film 2 is 10nm-20nm, the thickness of the second transition metal oxide film 4 is 20nm-50nm, and the thicknesses are the sizes of the N-type silicon substrate 1 and the first transition metal oxide film 2 in the stacking direction. The first transition metal oxide thin film 2 and the second transition metal oxide thin film 4 having the above-mentioned sizes are more favorable for moving holes and blocking electrons from moving.
The front electrode 5 is located on the light facing surface of the second transition metal oxide thin film 4, and the front electrode 5 is mainly used for collecting holes. The back electrode 6 is positioned on the backlight surface of the N-type silicon substrate 1. The back electrode 6 is mainly used for collecting electrons. The back electrode 6 may be an all back electrode. The material of the front electrode 5 and the back electrode 6 may be selected from at least one of Ag, cu, ni, sn, and Zn, the shape of the front electrode 5 and the back electrode 6 is not limited, and the generated carriers are collected and transferred to an external circuit.
Fig. 2 shows a schematic structural diagram of a second solar cell in an embodiment of the present invention. Optionally, referring to fig. 2, the solar cell further includes: an electron selection layer 9 is positioned on the backlight surface of the N-type silicon substrate 1, and the back electrode 6 is positioned on the backlight surface of the electron selection layer 9. The material of the electron selective layer 9 is selected from: doped hydrogenated amorphous silicon (a-Si: H (n)), titanium oxide (TiO) x ) Zinc oxide (ZnO), tantalum nitride (TaN) x ) Tantalum oxide (TaO) x ) Gallium oxide (GaO) x ) Lithium fluoride (LiF) x ) Magnesium fluoride (MgF) x ) Magnesium oxide (MgO) x ) Niobium oxide (NbO) x ) Or cesium carbonate (CsCO) 3 ) At least one of (1). It should be noted that x in the chemical formula is a suitable value that can be selected by those skilled in the art according to actual situations. The electron selection layer 9 can greatly reduce the schottky barrier between the N-type silicon substrate 1 and the back electrode 6, so as to further improve the photoelectric conversion efficiency of the solar cell. Meanwhile, the electron selection layer 9 made of the material has a smaller conduction band difference and a larger valence band difference with the N-type silicon substrate 1, so that a barrier is provided for hole movement, and movement of electrons is facilitated. The electron selective layer 9 of the above material can also generate a dipole moment by depilling of the fermi levelThe work function of the electrode is reduced, so that the barrier height of electron transportation is reduced, the contact resistivity is reduced, and the surface recombination is reduced.
The electron selective layer 9 can be realized by a simple process such as evaporation, atomic Layer Deposition (ALD), spin coating, and the like, and the process is simple.
Alternatively, referring to fig. 2, the thickness h2 of the electron selection layer 9 is 1nm to 10nm, and the thickness may be a dimension in a direction in which the N-type silicon substrate 1 and the first transition metal oxide thin film 2 are stacked. The electron selective layer 9 with the thickness is more beneficial to the movement of electrons, reduces the contact resistivity and reduces the surface recombination.
Optionally, the solar cell further includes: the transparent conducting layer is positioned on the backlight surface of the second transition metal oxide film 4, and the thickness of the transparent conducting layer is 30-200 um. The transparent conductive layer can improve the transverse conductivity of the solar cell. The transparent conducting layer can be prepared by a radio frequency magnetron sputtering method.
Optionally, the solar cell further includes: and a front passivation layer 7 positioned between the N-type silicon substrate 1 and the first transition metal oxide thin film 2. And/or a back passivation layer 8 positioned at the backlight surface of the N-type silicon substrate 1. The front passivation layer 7 and the back passivation layer 8 are used for improving the passivation performance of the N-type silicon substrate 1, and can prevent performance degradation. The front passivation layer 7 and the back passivation layer 8 may eliminate performance degradation due to direct contact between the N-type silicon substrate 1 and the emitter layer. The front passivation layer 7 and the back passivation layer 8 can improve the interface characteristics of the silicon N-type silicon substrate and smoothly transmit carriers generated by a tunneling effect.
The materials of the front passivation layer 7 and the back passivation layer 8 are selected from: silicon dioxide (SiO) 2 ) Titanium dioxide (TiO) 2 ) Aluminum oxide (Al) 2 O 3 ) And doped hydrogenated amorphous silicon (a-Si: H), the front passivation layer 7 and the back passivation layer 8 of the material have good passivation performance. The thicknesses of the front passivation layer 7 and the back passivation layer 8 are both 0.5nm-15nm.
The embodiment of the invention also provides a production method of the solar cell, which comprises the following steps:
step S1, providing an N-type silicon substrate.
And S2, depositing a first transition metal oxide film on the N-type silicon substrate.
S3, depositing a metal film on the first transition metal oxide film; the material of the metal film is selected from: at least one of cobalt, ruthenium and rhodium; in the case that the material of the metal thin film is selected from cobalt, the thickness of the metal thin film is 11.8nm-15nm; in the case that the material of the metal thin film is selected from ruthenium, the thickness of the metal thin film is 6.59nm-15nm; in the case that the material of the metal thin film is selected from rhodium, the thickness of the metal thin film is 6.88nm-15nm; in the case where the material of the metal thin film is selected from indium, the thickness of the metal thin film is 8.65nm to 15nm.
And S4, depositing a second transition metal oxide film on the metal film.
And S5, arranging a front electrode on the second transition metal oxide film.
And S6, arranging a back electrode on a backlight surface of the N-type silicon substrate.
The N-type silicon substrate, the first transition metal oxide thin film, the metal thin film, the second transition metal oxide thin film, and the like in each step of the method may refer to the above-mentioned related descriptions, and may achieve the same or similar beneficial effects, and are not described herein again in order to avoid repetition.
In the step S3, the metal film is obtained by a resistance-type thermal evaporation method or a magnetron sputtering method. In the steps S2 and S4, the first transition metal oxide film and the second transition metal oxide film are obtained by resistive thermal evaporation, electron beam evaporation or magnetron sputtering.
The front electrode in step S5 is formed by screen printing, electron beam evaporation, or sputtering. The back electrode is formed by evaporation in step S6.
The production method of the solar cell is carried out at a lower temperature, such as less than or equal to 200 ℃, so that the solar cell can be prepared.
The general production method of the solar cell shown with reference to fig. 1 may be as follows: in the N-typeAnd a front passivation layer 7 and a back passivation layer 8 are deposited on the light-facing surface and the back-light surface of the silicon substrate 1, wherein the front passivation layer 7 and the back passivation layer 8 can be the same or different and can be deposited on the N-type silicon substrate 1 by a PVD or CVD method. The front passivation layer 7 and the back passivation layer 8 can be both made of SiO 2 、TiO 2 、Al 2 O 3 Or a-Si is H, and the thickness is 0.5nm-15nm. For example, siO 2 Can be deposited by thermal oxidation, wet chemical oxidation, by radiation oxidation in the presence of ozone or LPCVD to a thickness of 0.5nm to 5nm. Deposition of Al by ALD 2 O 3 The thickness is 1nm-10nm. An a-Si: H layer is deposited using PECVD. A first transition metal oxide film 2 is deposited on the front passivation layer 7. A metal film 3 is deposited on the first transition metal oxide film 2. A second transition metal oxide film 4 is deposited on the metal film 3. A front electrode 5 is disposed on the second transition metal oxide thin film 4 and a back electrode 6 is disposed on the back passivation layer 8.
An embodiment of the present invention also provides a battery pack including: any of the foregoing solar cells. The N-type silicon substrate, the first transition metal oxide film, the metal film, the second transition metal oxide film, and the like in the module may refer to the aforementioned descriptions, and may achieve the same or similar beneficial effects, and are not repeated herein for avoiding repetition.
While the present invention has been described with reference to the preferred embodiments and embodiments, it is to be understood that the present invention is not limited to those precise embodiments, which are presented by way of illustration and not of limitation, and that various changes in form and detail may be effected therein by one skilled in the art without departing from the scope of the invention as defined by the appended claims.
Claims (10)
1. A solar cell, comprising:
an N-type silicon substrate;
the first transition metal oxide film is positioned on the light facing surface of the N-type silicon substrate;
the metal film is positioned on the light facing surface of the first transition metal oxide film; the material of the metal film is selected from: at least one of cobalt, ruthenium, rhodium and indium; in the case that the material of the metal thin film is selected from cobalt, the thickness of the metal thin film is 11.8nm-15nm; in the case that the material of the metal thin film is selected from ruthenium, the thickness of the metal thin film is 6.59nm-15nm; in the case that the material of the metal thin film is selected from rhodium, the thickness of the metal thin film is 6.88nm-15nm; in the case that the material of the metal thin film is selected from indium, the thickness of the metal thin film is 8.65nm-15nm; wherein the thickness of the metal film is larger than or equal to the electron mean free path of the corresponding metal;
the second transition metal oxide film is positioned on the light facing surface of the metal film;
the front electrode is positioned on the light facing surface of the second transition metal oxide film;
and the back electrode is positioned on the backlight surface of the N-type silicon substrate.
2. The solar cell of claim 1, further comprising: the electron selection layer is positioned on a backlight surface of the N-type silicon substrate; the back electrode is positioned on a backlight surface of the electronic selection layer;
the material of the electron selective layer is selected from: doped with at least one of hydrogenated amorphous silicon, titanium oxide, zinc oxide, tantalum nitride, tantalum oxide, gallium oxide, lithium fluoride, magnesium oxide, niobium oxide, or cesium carbonate.
3. The solar cell according to claim 2, wherein the thickness of the electron selective layer is 1nm to 10nm.
4. The solar cell according to claim 1 or 2, wherein the first transition metal oxide thin film and the second transition metal oxide thin film are selected from the group consisting of: at least one of a molybdenum oxide film, a vanadium pentoxide film and a tungsten oxide film;
the thickness of the first transition metal oxide film is 10nm-20nm, and the thickness of the second transition metal oxide film is 20nm-50nm.
5. The solar cell according to claim 1 or 2, further comprising: the transparent conducting layer is positioned on the backlight surface of the second transition metal oxide film; the thickness of the transparent conducting layer is 30um-200um.
6. The solar cell according to claim 1 or 2, further comprising: a front passivation layer positioned between the N-type silicon substrate and the first transition metal oxide thin film;
and/or a back passivation layer positioned on a backlight surface of the N-type silicon substrate;
the front passivation layer and the back passivation layer are made of materials selected from the following: one of silicon dioxide, titanium dioxide, aluminum oxide and doped hydrogenated amorphous silicon;
the thicknesses of the front passivation layer and the back passivation layer are both 0.5nm-15nm.
7. A method for producing a solar cell, comprising:
providing an N-type silicon substrate;
depositing a first transition metal oxide film on the N-type silicon substrate;
depositing a metal film on the first transition metal oxide film; the material of the metal film is selected from: at least one of cobalt, ruthenium, rhodium and indium; in the case that the material of the metal thin film is selected from cobalt, the thickness of the metal thin film is 11.8nm-15nm; in the case that the material of the metal thin film is selected from ruthenium, the thickness of the metal thin film is 6.59nm-15nm; in the case that the material of the metal thin film is selected from rhodium, the thickness of the metal thin film is 6.88nm-15nm; in the case that the material of the metal thin film is selected from indium, the thickness of the metal thin film is 8.65nm-15nm; depositing a second transition metal oxide film on the metal film; wherein the thickness of the metal film is larger than or equal to the electron mean free path of the corresponding metal;
arranging a front electrode on the second transition metal oxide film;
and arranging a back electrode on the backlight surface of the N-type silicon substrate.
8. The method for producing a solar cell according to claim 7,
the metal film is obtained by adopting a resistance type thermal evaporation method or a magnetron sputtering method;
the first transition metal oxide film and the second transition metal oxide film are obtained by adopting a resistance type thermal evaporation method, an electron beam evaporation method or a magnetron sputtering method.
9. The method for producing a solar cell according to claim 7 or 8,
the front electrode is formed by screen printing, electron beam evaporation or sputtering;
the back electrode is formed by evaporation.
10. A battery assembly, comprising: the solar cell of any one of claims 1 to 6.
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