CN104916709A - Solar battery with structure of oxide-metal multilayer film/silicon substrate - Google Patents
Solar battery with structure of oxide-metal multilayer film/silicon substrate Download PDFInfo
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- CN104916709A CN104916709A CN201510291138.6A CN201510291138A CN104916709A CN 104916709 A CN104916709 A CN 104916709A CN 201510291138 A CN201510291138 A CN 201510291138A CN 104916709 A CN104916709 A CN 104916709A
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 71
- 239000002184 metal Substances 0.000 title claims abstract description 71
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 46
- 239000010703 silicon Substances 0.000 title claims abstract description 46
- 239000000758 substrate Substances 0.000 title claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 45
- 238000002161 passivation Methods 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 27
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 25
- 229910052709 silver Inorganic materials 0.000 claims abstract description 23
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000004332 silver Substances 0.000 claims abstract description 22
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 21
- 238000002360 preparation method Methods 0.000 claims abstract description 19
- 239000010408 film Substances 0.000 claims description 140
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 84
- 239000000377 silicon dioxide Substances 0.000 claims description 42
- 238000002207 thermal evaporation Methods 0.000 claims description 36
- 230000008020 evaporation Effects 0.000 claims description 23
- 238000001704 evaporation Methods 0.000 claims description 23
- 238000000151 deposition Methods 0.000 claims description 16
- 239000004411 aluminium Substances 0.000 claims description 12
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 10
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 7
- 238000005566 electron beam evaporation Methods 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 abstract description 3
- 230000006798 recombination Effects 0.000 abstract description 3
- 238000005215 recombination Methods 0.000 abstract description 3
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 abstract 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- 238000010923 batch production Methods 0.000 abstract 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 description 24
- 238000000576 coating method Methods 0.000 description 24
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 11
- 229910018125 Al-Si Inorganic materials 0.000 description 7
- 229910018520 Al—Si Inorganic materials 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 239000010931 gold Substances 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 230000004087 circulation Effects 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000012010 growth Effects 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000007773 growth pattern Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 229910006578 β-FeSi2 Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Microelectronics & Electronic Packaging (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
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- Photovoltaic Devices (AREA)
Abstract
The invention discloses a solar battery with a structure of an oxide-metal multilayer film/a silicon substrate. The solar battery structure, from the top to the bottom, successively comprises: a silver electrode, an oxide-metal multilayer film, a passivation layer, a silicon substrate and a full aluminum back electrode. The oxide-metal multilayer film is obtained through compositing a first oxide film, a metal film and a second oxide film. The first oxide film or the second oxide film is a MoO3 film, a tin-doped In2O3 film, a fluorine-doped SnO2 film or an aluminum-doped ZnO film. The metal film is an Ag film, an Au film or an Al film. The solar battery can prevent the tradition thermal diffusion or can prevent the auger recombination and the dead layer phenomenon which are caused by the preparation emission electrode of the ion injection method. Furthermore, the invention also discloses a method for the solar battery with a structure of an oxide-metal multilayer film/a silicon base, which is less in the preparation procedures, applicable to the batch production and high temperature free during the whole preparation process.
Description
Technical field
The invention belongs to technical field of solar cells, be specifically related to one and there is oxide-metal multi-layer film structure/silica-based solar cell and preparation method thereof.
Background technology
The modal structure of solar cell is the structure of the p-n junction type of inorganic material system, can be divided into homojunction and heterojunction according to the material similarities and differences.Heterojunction (Heterojunction, HJ) refers to the p-n junction of two kinds of different semi-conducting material compositions, proposes the concept of heterojunction in nineteen fifty-one by people such as Gubanov.Heterojunction solar cell can avoid high-temperature diffusion process, forms p-n junction at low temperatures by evaporated film and silicon substrate.Current silicon substrate heterojunction solar cell mainly comprises a-Si:H/c-Si heterojunction solar cell (Heterojunction with intrinsic Thinlayer, HIT), AZO/Si heterojunction solar cell, IBC-SHJ solar cell, β-FeSi2/Si heterojunction solar cell.Wherein HIT solar cell passes through the method for thermal evaporation at silicon face deposition of amorphous silicon at nineteen sixty-eight Grigorovici at first, and because the defect state density of amorphous silicon membrane is higher, therefore efficiency comparison is low.Afterwards along with the technical development of PECVD, containing hydrogen in the amorphous silicon of deposition, can realize good passivation to silicon and amorphous silicon contact interface layer, HIT battery achieved the efficiency of 25.6% in 2014.But HIT solar cell exists following problem at present: one, apparatus expensive, and raw material belong to high risk chemical substance.Two, for obtaining the amorphous silicon/crystalline silicon interface of interface state, require higher to technology and equipment.Three, amorphous silicon can have parasitic absorption to light, decreases short-circuit current density.Therefore need to find new material, be combined with silicon and form novel heterojunction solar cell.
Mixed the SnO of F in recent years
2(FTO) Sn of In, is mixed
2o
3(ITO) ZnO (AZO), the MoO of Al, is mixed
3obtain a wide range of applications in solar cell field Deng oxide film material.In order to improve optics and the electrology characteristic of film further, and low-temperature growth transparent conductive film can be realized, by inserting layer of metal layer in the middle of transparent conductive film, mainly as oxide/metal/oxide multilayered structured transparent conducting oxide electrode, such as MoO
3/ Ag/MoO
3, ITO/Ag/ITO, AZO/Ag/AZO etc.Because they not only have lower resistivity, and the film of oxide/metal/oxide composite structure effectively can stop the reflection of metal level, because the plasmon coupling effect between metal level and oxide skin(coating), make the transmitance that it increases at visible-range.In the sandwich structure of the middle embedded metal layer of this oxide skin(coating), the growth pattern of metal level, along with the increase of thickness, from discontinuous island structure, becomes continuous print film, and it obtains lower square resistance.
But the transparent conductive film of embedded metal Rotating fields in the middle of current this oxide skin(coating), only in organic dye sensitized solar cell, as low-temperature growth transparent conductive film.This oxide-metal multilayer film is not yet for making solar cell in silicon chip or silicon thin film.
Summary of the invention
It is oxide-metal multilayer film/silica-based solar cell that first technical problem to be solved by this invention is to provide a kind of structure, oxide-metal multilayer film is used for the emitter as battery in silicon chip or silicon thin film by this solar cell, oxide-metal multilayer film/the silica-based solar cell formed, traditional thermal diffusion or ion implantation can be avoided to prepare auger recombination that emitter causes and dead layer phenomenon.
Second technical problem to be solved by this invention is to provide the preparation method that said structure is oxide-metal multilayer film/silica-based solar cell, and the method production process is few, and be applicable to large-scale production, whole preparation process is without the need to high temperature.
First technical problem of the present invention is achieved through the following technical solutions: a kind of structure is oxide-metal multilayer film/silica-based solar cell, the structure of this solar cell comprises from top to bottom successively: silver electrode, oxide-metal multilayer film, passivation layer, silicon substrate and full aluminum back electrode, described oxide-metal multilayer film is composited by the first sull, metallic film and the second sull, and the first described sull or the second sull are MoO
3film, mix tin In
2o
3film, mix fluorine SnO
2film or mix aluminium ZnO film, described metallic film is Ag film, Au film or Al film.
The present invention forms oxide-metal multilayer film/silica-based solar cell by being combined with silicon chip or silicon thin film by oxide-metal multilayer film, and oxide comprises Al-Doped ZnO (AZO), MoO
3, tin indium oxide (ITO), mix fluorine SnO
2films etc., metal comprises Ag, Au or Al etc., and silicon comprises monocrystalline silicon, polysilicon or silicon thin film etc.The light absorbing zone mainly silicon of battery, oxide-metal multilayer film plays the effect of emitter, antireflective, conduction, and whole preparation technology is in the state of low temperature, and equipment is simple, and cost is lower, environmental friendliness.
The thickness of the first described sull is preferably 10 ~ 20nm, and the thickness of described metallic film is preferably 2 ~ 15nm, and the thickness of described second sull is preferably 30 ~ 50nm.
Described silicon substrate can be monocrystalline silicon piece, polysilicon chip or silicon thin film.Monocrystalline silicon piece or polysilicon chip are P type or n type single crystal silicon sheet or polysilicon chip.
Second technical problem of the present invention is achieved through the following technical solutions: the above-mentioned preparation method with oxide-metal multi-layer film structure/silica-based solar cell, comprises the following steps:
(1) crystal silicon chip is chosen, after cleaning, in the front surface deposit passivation layer of crystal silicon chip;
(2) depositing first oxide film on the passivation layer prepared in step (1);
(3) metal film on the first sull prepared in step (2);
(4) depositing second oxide film on the metallic film prepared in step (3);
(5) the second sull deposited in step (4) arranges silver electrode as front surface electrode, full aluminum back electrode is set at the back side of crystalline silicon.
Have in the preparation method of oxide-metal multi-layer film structure/silica-based solar cell above-mentioned:
In step (1), cleaning preferably adopts the cleaning of RCA technique.
Passivation layer described in step (1) is SiO
2, TiO
2, Al
2o
3or Si
3n
4, its thickness is 1 ~ 15nm, adopts thermal oxidation, PECVD, ald or magnetron sputtering method to obtain.
In step (2), in the first sull and step (4), the second sull adopts resistance-type thermal evaporation, electron beam evaporation or magnetron sputtering method to obtain.
In step (3), metallic film adopts resistance-type thermal evaporation evaporation to obtain.
Adopting silk screen print method or mask half tone resistance-type thermal evaporation to prepare silver grating line as silver electrode, the width 0.5 ~ 1mm of silver grating line in step (4), is highly 200 ~ 300nm.
Resistance-type thermal evaporation evaporation is adopted to obtain full aluminum back electrode in step (4).
Compared with prior art, tool of the present invention has the following advantages:
(1) battery structure in the present invention is simple, and manufacturing process is few, is applicable to large-scale production;
(2) utilize oxide-metal multilayer film effectively can reduce the highly doped auger recombination that causes and dead layer as the emitter of battery, can compound be reduced, strengthen the short wave response of solar cell, improve the short circuit current of battery;
(3), in the whole preparation process of battery of the present invention, there is no pyroprocess, high-efficiency battery can be prepared at low temperatures;
(4) the present invention carries out passivation by passivation layer to oxide-metal multilayer film and silicon chip or silicon thin film contact interface, can reduce defect state;
(5) what prepared by the present invention has oxide-metal-oxide multilayered film silica-based solar cell that oxide-metal multilayer film/silica-based solar cell is a kind of brand new;
(6) compared with the heterojunction solar cells such as HIT, crystallite silicon/crystalline silicon, adopt oxide-metal-oxide multilayered film as the emitter of battery in the present invention, have that preparation technology is succinct, device performance good, equipment is simple, with low cost, the advantage of energy-conserving and environment-protective;
(7) have oxide-metal multilayer film/silica-based solar cell in the present invention, its photoelectric conversion efficiency is higher, has certain application prospect.
Accompanying drawing explanation
Fig. 1 is the structure chart of first oxide-metal-the second oxides thing-metallized multilayer film silica-based solar cell in embodiment of the present invention 1-7, and wherein 1 is silver grating line, and 2 is the first oxide, 3 is metal, and 4 is the second oxide, and 4 is passivation layer, 5 is silicon substrate, and 6 is full aluminum back electrode;
Fig. 2 is the structural representation of the oxide-metal multilayer film in Fig. 1, and wherein 21 is the first oxide, and 22 is metal, and 23 is the second oxide;
Fig. 3 is the MoO of preparation in embodiment 1
3/ Ag/MoO
3current density-voltage (J-V) figure of multilayer film silica-based solar cell;
Fig. 4 is MoO prepared in embodiment 1
3/ Ag/MoO
3the optical characteristics figure of oxide-metal multilayer film solar cell, reach 85% at the most high permeability of visible light part, the mean transmissivity being 300 ~ 1200nm scope inner oxide-metallized multilayer film at wavelength is 55%, and average reflectance is 30.8%.
Embodiment
Illustrate content of the present invention further below in conjunction with the drawings and specific embodiments, but these embodiments do not limit the scope of the invention.
Embodiment 1
As shown in fig. 1, the structure that the present embodiment provides is oxide-metal multilayer film/silica-based solar cell, the structure of this solar cell comprises from top to bottom successively: silver electrode 1, oxide-metal multilayer film 2, passivation layer 3, silicon substrate 4 and full aluminum back electrode 5, oxide-metal multilayer film 2 is composited by the first sull 21, metallic film 22 and the second sull 23, and wherein the first sull 21 and the second sull 23 are MoO
3film, metallic film 22 is Ag film, and passivation layer 3 is SiO
2passivation layer.
Wherein the thickness of the first sull is 10 ~ 20nm, and the thickness of metallic film is 2 ~ 15nm, and the thickness of the second sull is 30 ~ 50nm.
Said structure is oxide-metal multilayer film/silica-based solar cell, prepares by the following method:
(1) N-shaped or p-type monocrystalline silicon piece RCA technique are cleaned, then use dry oxygen thermal oxidation technology to form SiO at silicon chip surface
2passivation layer, the temperature arranging thermal oxidation is 850 DEG C, and oxidization time is 1 ~ 10min, forms the silicon dioxide of 2 ~ 15nm at silicon chip surface;
Wherein RCA cleaning mainly comprises SPM (H
2sO
4: H
2o
2=3:1) organics removal, DHF (HF:H
2o=1:30) oxide layer is removed, with APM (NH
4oH:H
2o
2: H
2o=1:1:5) particle is removed, HPM (HCl:H
2o
2: H
2o=1:1:6) metal impurities are removed.
(2) then MoO is prepared by resistance-type thermal evaporation coating machine in passivation layer surface
3film, vacuum degree is approximately 5 × 10
-4pa, the thickness of film is 10 ~ 20nm;
(3) re-use resistance-type thermal evaporation coating machine evaporation gold, silver or aluminium film, vacuum degree is about 8 × 10
-4pa, thickness is 2 ~ 15nm;
And then use resistance-type thermal evaporation coating machine to prepare MoO (4)
3film, vacuum degree is about 5 × 10
-4pa, the thickness of film is 30 ~ 50nm;
(5) mask half tone resistance-type thermal evaporation coating machine evaporation silver grating line is adopted, as front surface electrode, grid line width 0.5 ~ 1mm, height 200 ~ 300nm; Finally utilize the full aluminium backplate of resistance-type thermal evaporation evaporation, finally obtained Al-Si (n or p)-SiO
2-MoO
3/ Ag/MoO
3-Ag battery, the efficiency of this battery as shown in Figure 3, MoO prepared by the present embodiment
3/ Ag/MoO
3the short-circuit current density of multilayer film silica-based solar cell is 27.012mA/cm
2, open circuit voltage is 0.464V, and fill factor, curve factor is 63.17%, and efficiency is 7.92%, MoO prepared by the present embodiment
3/ Ag/MoO
3the optical characteristics figure of oxide-metal multilayer film solar cell is shown in shown in Fig. 4, as can be seen from Figure 4, reach 85% at the most high permeability of visible light part, the mean transmissivity being 300 ~ 1200nm scope inner oxide-metallized multilayer film at wavelength is 55%, and average reflectance is 30.8%.
Embodiment 2
The structure that the present embodiment provides is oxide-metal multilayer film/silica-based solar cell, and as different from Example 1, passivation layer 3 is Al
2o
3passivation layer.
Said structure is oxide-metal multilayer film/silica-based solar cell, prepares by the following method:
(1) N-shaped or p-type monocrystalline silicon piece RCA technique are cleaned, then use ald (ALD) technology to deposit one deck Al at silicon chip surface
2o
3passivation layer, arranging depositing temperature is 200 DEG C, Al (TMA), N
2, H
2the burst length of O is respectively: 0.1s, 10s and 0.1s, and flow velocity is respectively: 150sccm, 150sccm and 200sccm, carries out 10 ~ 30 circulations, at the aluminium oxide of silicon chip surface deposition 1 ~ 3nm;
(2) then MoO is prepared by resistance-type thermal evaporation coating machine in passivation layer surface
3film, vacuum degree is 5 × 10
-4pa, the thickness of film is 10 ~ 20nm;
(3) re-use resistance-type thermal evaporation coating machine evaporation Ag films, vacuum degree is 8 × 10
-4pa, thickness is 2 ~ 15nm;
And then use resistance-type thermal evaporation coating machine to prepare MoO (4)
3film, vacuum degree is 5 × 10
-4pa, the thickness of film is 30 ~ 50nm;
(5) mask half tone resistance-type thermal evaporation coating machine evaporation silver grating line is adopted, as front surface electrode, grid line width 0.5 ~ 1mm, height 200 ~ 300nm; Finally utilize the full aluminium backplate of resistance-type thermal evaporation evaporation, finally obtained Al-Si (n or p)-Al
2o
3-MoO
3/ Ag/MoO
3-Ag battery.
Embodiment 3
The structure that the present embodiment provides is oxide-metal multilayer film/silica-based solar cell, and as different from Example 1, passivation layer 3 is TiO
2passivation layer.
Said structure is oxide-metal multilayer film/silica-based solar cell, prepares by the following method:
(1) N-shaped or p-type monocrystalline silicon piece RCA technique are cleaned, then use ald (ALD) technology to deposit one deck TiO at silicon chip surface
2passivation layer, arranging depositing temperature is 200 ~ 300 DEG C, TiCl
4, N
2, H
2the burst length of O is respectively: 1s, 3s and 1s, and flow velocity is respectively: 150sccm, 150sccm and 200sccm, carries out 10 ~ 30 circulations, at the titanium dioxide of silicon chip surface deposition 1 ~ 3nm;
(2) then MoO is prepared by resistance-type thermal evaporation coating machine in passivation layer surface
3film, vacuum degree is 5 × 10
-4pa, the thickness of film is 10 ~ 20nm;
(3) re-use resistance-type thermal evaporation coating machine evaporation Ag films, vacuum degree is 8 × 10
-4pa, thickness is 2 ~ 15nm;
And then use resistance-type thermal evaporation coating machine to prepare MoO (4)
3film, vacuum degree is 5 × 10
-4pa, the thickness of film is 30 ~ 50nm;
(5) mask half tone resistance-type thermal evaporation coating machine evaporation silver grating line is adopted, as front surface electrode, grid line width 0.5 ~ 1mm, height 200 ~ 300nm; Finally utilize the full aluminium backplate of resistance-type thermal evaporation evaporation, finally obtained Al-Si (n or p)-TiO
2-MoO
3/ Ag/MoO
3-Ag battery.
Embodiment 4
The structure that the present embodiment provides is oxide-metal multilayer film/silica-based solar cell, and as different from Example 1, passivation layer 3 is Si
3n
4passivation layer.
Said structure is oxide-metal multilayer film/silica-based solar cell, prepares by the following method:
(1) N-shaped or p-type monocrystalline silicon piece RCA technique are cleaned, then use the chemical vapour deposition (CVD) of plasma enhancing (PECVD) technology to deposit one deck Si at silicon chip surface
3n
4passivation layer, arranging depositing temperature is 200 ~ 300 DEG C, and pressure is 5 × 10
-3pa, NH
3: SiH
4for 60:45sccm, after 1 ~ 3min, form the silicon nitride of 2 ~ 6nm;
(2) then MoO is prepared by resistance-type thermal evaporation coating machine in passivation layer surface
3film, vacuum degree is 5 × 10
-4pa, the thickness of film is 10 ~ 20nm;
(3) re-use resistance-type thermal evaporation coating machine evaporation gold, silver or aluminium film, vacuum degree is 8 × 10
-4pa, thickness is 2 ~ 15nm;
And then use resistance-type thermal evaporation coating machine to prepare MoO (4)
3film, vacuum degree is 5 × 10
-4pa, the thickness of film is 30 ~ 50nm;
(5) mask half tone resistance-type thermal evaporation coating machine evaporation silver grating line is adopted, as front surface electrode, grid line width 0.5 ~ 1mm, height 200 ~ 300nm; Finally utilize the full aluminium backplate of resistance-type thermal evaporation evaporation, finally obtained Al-Si (n or p)-Si
3n
4-MoO
3/ Ag/MoO
3-Ag battery.
Embodiment 5
The structure that the present embodiment provides is oxide-metal multilayer film/silica-based solar cell, and as different from Example 1, the first sull 21 is ito thin film, and the second sull 23 is MoO
3film, passivation layer 3 is alumina passivation layer.
Said structure is oxide-metal multilayer film/silica-based solar cell, prepares by the following method:
(1) N-shaped or p-type monocrystalline silicon piece RCA technique are cleaned, then use ald (ALD) technology to deposit one deck passivation layer at silicon chip surface, arranging depositing temperature is 200 DEG C, Al (TMA), N
2, H
2the burst length of O is respectively: 0.1s, 10s and 0.1s, and flow velocity is respectively: 150sccm, 150sccm and 200sccm, carries out 10 ~ 30 circulations, at the aluminium oxide of silicon chip surface deposition 1 ~ 3nm;
(2) then prepare ito thin film by electron beam evaporation deposition machine in passivation layer surface, vacuum degree is 5 × 10
-4pa, the thickness of film is 10 ~ 20nm;
(3) re-use resistance-type thermal evaporation coating machine gold evaporation Ag films, vacuum degree is 8 × 10
-4pa, thickness is 2 ~ 15nm;
And then make deposited by electron beam evaporation prepare coating machine to prepare MoO (4)
3film, vacuum degree is 5 × 10
-4pa, the thickness of film is 30 ~ 50nm;
(5) mask half tone resistance-type thermal evaporation coating machine evaporation silver grating line is adopted, as front surface electrode, grid line width 0.5 ~ 1mm, height 200 ~ 300nm; Finally utilize the full aluminium backplate of resistance-type thermal evaporation evaporation, finally obtained Al-Si (n or p)-Al
2o
3-ITO/Ag/ITO-Ag battery.
Embodiment 6
The structure that the present embodiment provides is oxide-metal multilayer film/silica-based solar cell, and as different from Example 1, the first sull 21 is AZO film, and the second sull 23 is AZO film, and passivation layer 3 is alumina passivation layer.
Said structure is oxide-metal multilayer film/silica-based solar cell, prepares by the following method:
(1) N-shaped or p-type monocrystalline silicon piece RCA technique are cleaned, then use ald (ALD) technology to deposit one deck passivation layer at silicon chip surface, arranging depositing temperature is 200 DEG C, Al (TMA), N
2, H
2the burst length of O is respectively: 0.1s, 10s and 0.1s, and flow velocity is respectively: 150sccm, 150sccm and 200sccm, carries out 10 ~ 30 circulations, at the aluminium oxide of silicon chip surface deposition 1 ~ 3nm;
(2) then prepare AZO film by rf magnetron sputtering in passivation layer surface, vacuum degree is 5 × 10
-4pa, the thickness of film is 10 ~ 20nm;
(3) re-use electron beam evaporation and prepare aluminium film, vacuum degree is 8 × 10
-4pa, thickness is 2 ~ 15nm;
(4) and then make deposited by electron beam evaporation prepare AZO film, vacuum degree is 5 × 10
-4pa, the thickness of film is 30 ~ 50nm;
(5) mask half tone resistance-type thermal evaporation coating machine evaporation silver grating line is adopted, as front surface electrode, grid line width 0.5 ~ 1mm, height 200 ~ 300nm; Finally utilize the full aluminium backplate of resistance-type thermal evaporation evaporation, finally obtained Al-Si (n or p)-Al
2o
3-AZO/Ag/AZO-Ag battery.
Embodiment 7
The structure that the present embodiment provides is oxide-metal multilayer film/silica-based solar cell, and as different from Example 1, the first sull 21 is AZO film, and the second sull 23 is AZO film, and passivation layer 3 is silicon dioxide passivation layer.
Said structure is oxide-metal multilayer film/silica-based solar cell, prepares by the following method:
(1) N-shaped or p-type monocrystalline silicon piece RCA technique are cleaned, then dry oxygen thermal oxidation technology is used to deposit one deck passivation layer at silicon chip surface, the temperature arranging thermal oxidation is 850 DEG C, and oxidization time is 1 ~ 10min, forms the silicon dioxide of 2 ~ 15nm at silicon chip surface;
(2) then by rf magnetron sputtering at passivation layer surface making ZnO film, vacuum degree is 5 × 10
-4pa, the thickness of film is 10 ~ 20nm;
(3) re-use rf magnetron sputtering gold thin film, vacuum degree is 8 × 10
-4pa, thickness is 2 ~ 15nm;
(4) and then use rf magnetron sputtering making ZnO film, vacuum degree is 5 × 10
-4pa, the thickness of film is 30 ~ 50nm;
(5) mask half tone resistance-type thermal evaporation coating machine evaporation silver grating line is adopted, as front surface electrode, grid line width 0.5 ~ 1mm, height 200 ~ 300nm; Finally utilize the full aluminium backplate of resistance-type thermal evaporation evaporation, finally obtained Al-Si (n or p)-Al
2o
3-ZnO/Ag/ZnO-Ag battery.
Obviously, foregoing just in order to feature of the present invention is described, and is not limitation of the present invention, and the those of ordinary skill of relevant technical field should belong to protection category of the present invention according to the present invention in the change that corresponding technical field is made.
Claims (10)
1. a structure is oxide-metal multilayer film/silica-based solar cell, it is characterized in that the structure of this solar cell comprises from top to bottom successively: silver electrode, oxide-metal multilayer film, passivation layer, silicon substrate and full aluminum back electrode, described oxide-metal multilayer film is composited by the first sull, metallic film and the second sull, and the first described sull or the second sull are MoO
3film, mix tin In
2o
3film, mix fluorine SnO
2film or mix aluminium ZnO film, described metallic film is Ag film, Au film or Al film.
2. structure according to claim 1 is oxide-metal multilayer film/silica-based solar cell, it is characterized in that: the thickness of the first described sull is 10 ~ 20nm, the thickness of described metallic film is 2 ~ 15nm, and the thickness of the second described sull is 30 ~ 50nm.
3. structure according to claim 1 and 2 is oxide-metal multilayer film/silica-based solar cell, it is characterized in that: described silicon substrate is monocrystalline silicon, polysilicon or silicon thin film.
4. the structure described in claim 1 or 2 is the preparation method of oxide-metal multilayer film/silica-based solar cell, it is characterized in that comprising the following steps:
(1) crystal silicon chip is chosen, after cleaning, in the front surface deposit passivation layer of crystal silicon chip;
(2) depositing first oxide film on the passivation layer prepared in step (1);
(3) metal film on the first sull prepared in step (2);
(4) depositing second oxide film on the metallic film prepared in step (3);
(5) the second sull deposited in step (4) arranges silver electrode as front surface electrode, full aluminum back electrode is set at the back side of crystalline silicon.
5. structure according to claim 4 is the preparation method of oxide-metal multilayer film/silica-based solar cell, it is characterized in that: in step (1), cleaning adopts the cleaning of RCA technique.
6. structure according to claim 4 is the preparation method of oxide-metal multilayer film/silica-based solar cell, it is characterized in that: the passivation layer described in step (1) is SiO
2, TiO
2, Al
2o
3or Si
3n
4, its thickness is 1 ~ 15nm, adopts thermal oxidation, PECVD, ald or magnetron sputtering method to obtain.
7. structure according to claim 4 is the preparation method of oxide-metal multilayer film/silica-based solar cell, it is characterized in that: in step (2), in the first sull and step (4), the second sull adopts resistance-type thermal evaporation, electron beam evaporation or magnetron sputtering method to obtain.
8. structure according to claim 4 is the preparation method of oxide-metal multilayer film/silica-based solar cell, it is characterized in that: in step (3), metallic film adopts resistance-type thermal evaporation evaporation to obtain.
9. structure according to claim 4 is the preparation method of oxide-metal multilayer film/silica-based solar cell, it is characterized in that: in step (5), adopt silk screen print method or mask half tone resistance-type thermal evaporation to prepare silver grating line as silver electrode, width 0.5 ~ the 1mm of silver grating line is highly 200 ~ 300nm.
10. structure according to claim 4 is the preparation method of oxide-metal multilayer film/silica-based solar cell, it is characterized in that: adopt resistance-type thermal evaporation evaporation to obtain full aluminum back electrode in step (5).
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Effective date of registration: 20210521 Address after: No.58 Xiangjiang Road, Yancheng Economic and Technological Development Zone, Jiangsu Province 224005 Patentee after: JIANGSU RUNYANG YUEDA PHOTOVOLTAIC TECHNOLOGY Co.,Ltd. Address before: 510275 No. 135 West Xingang Road, Guangzhou, Guangdong, Haizhuqu District Patentee before: SUN YAT-SEN University |