CN112101270A - Display panel applied to fingerprint recognition under screen - Google Patents
Display panel applied to fingerprint recognition under screen Download PDFInfo
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- CN112101270A CN112101270A CN202011009207.7A CN202011009207A CN112101270A CN 112101270 A CN112101270 A CN 112101270A CN 202011009207 A CN202011009207 A CN 202011009207A CN 112101270 A CN112101270 A CN 112101270A
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- G—PHYSICS
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- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
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- Sustainable Development (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses a display panel applied to under-screen fingerprint identification, which comprises a substrate, a fingerprint identification component, a buffer layer, a thin film transistor, a display functional layer, a polaroid and a cover plate, wherein the substrate is provided with a fingerprint identification component; the fingerprint identification component is arranged on the upper surface of the substrate; the buffer layer is arranged on the fingerprint identification assembly; the thin film transistor is arranged on the buffer layer; the display device is characterized in that a display function layer is arranged on the thin film transistor and comprises a transparent anode, a pixel light emitting layer and a reflective cathode which are sequentially arranged from bottom to top, and pixels on the pixel light emitting layer and the fingerprint identification assembly are arranged on a projection plane vertical to the substrate at intervals. Above-mentioned technical scheme sets up the fingerprint identification subassembly between the upper surface of thin-film transistor and base plate, and the distance between fingerprint identification subassembly and the apron can be less than the distance between fingerprint identification subassembly and the apron in the current display panel to improve the recognition rate of fingerprint under being applied to the screen.
Description
Technical Field
The invention relates to the technical field of display panels, in particular to a display panel applied to fingerprint identification under a screen.
Background
The display panels that support fingerprint recognition are currently on the market in three categories, the first is integrated on the HOME key at the bottom of the front, the second is designed on the back body, and the third is designed on the screen. After the smart phone enters the full screen era, the industry generally considers that the fingerprint under the screen is the future development trend.
From the technical principle of fingerprint identification, optical, capacitive and ultrasonic are three common fingerprint identification methods. Traditional capacitanc fingerprint unblock has exited the mainstream market gradually, mainly because fingerprint identification needs the fingerprint collection window, will influence the screen to account for the ratio absolutely, therefore the fingerprint should be born under the screen. Currently known under-screen fingerprint identification schemes are mainly two directions: one is achieved with OLEDs, i.e. optical identification, and the other is achieved with ultrasound. Similarly, the recognition sensor is arranged on the back side of the substrate, but the ultrasonic wave has the problems of low recognition rate and low recognition speed; the adopted OLED is active light emitting, so that the light and thin of the screen can be ensured, meanwhile, the light emitting of each sub-pixel point can be accurately controlled, and the recognition rate and the accuracy rate of fingerprints under the screen are higher. On the other hand, for the existing TFT (thin film transistor) -LCD (liquid crystal display) technology, the TFT substrate itself is not transparent, and emits light through the TFT through the bottom LED backlight, and compared with the advantage of self-light-emitting of the OLED, the sensor under the screen is difficult to identify the fingerprint.
In the capacitance type fingerprint identification component, a finger is one pole of a capacitor, the other pole of the capacitor is a silicon chip array, and through micro-current generated between a micro-electric field carried by a human body and a capacitance sensor, the distance between the wave crest and the wave trough of the fingerprint and the sensor forms capacitance height difference to draw a figure of the fingerprint. The distance between fingerprint identification subassembly and the apron is long, and the transmission path that fingerprint reverberation reachd the fingerprint identification subassembly of below is long, and the loss of fingerprint reflection light is great, can reduce the sensitivity of fingerprint identification subassembly discernment fingerprint.
In the application number of CN201811580411.7, the name is OLED display panel and optical fingerprint identification method under screen, the rete space has been utilized, the route that the light propagated has been reduced to increase fingerprint identification received optical signal to noise ratio through setting up the light barrier layer, improve fingerprint identification sensitivity and efficiency.
Disclosure of Invention
Therefore, a display panel applied to fingerprint identification under a screen needs to be provided, and the problem that the sensitivity of fingerprint identification component for identifying fingerprint information is insufficient is solved.
In order to achieve the above object, the present embodiment provides a display panel applied to underscreen fingerprint identification, including a substrate, a fingerprint identification component, a buffer layer, a thin film transistor, a display function layer, a polarizer and a cover plate;
the fingerprint identification component is arranged on the upper surface of the substrate;
the buffer layer is arranged on the fingerprint identification assembly;
the thin film transistor is arranged on the buffer layer and is positioned above the fingerprint identification assembly;
the display functional layer is arranged on the thin film transistor and comprises a transparent anode, a pixel light emitting layer and a reflective cathode which are sequentially arranged from bottom to top, pixels on the pixel light emitting layer and the fingerprint identification assembly are arranged at intervals on a projection surface perpendicular to the substrate, and the reflective cathode is used for reflecting light emitted by the pixel light emitting layer to the direction of the substrate.
Further, the display function layer comprises a passivation layer, a flat layer and a pixel defining layer;
the passivation layer is arranged on the thin film transistor;
the passivation layer is provided with the flat layer;
the anode is arranged on the flat layer and is connected with the source electrode or the drain electrode of the thin film transistor through the hole in the flat layer;
the pixel defining layer is arranged on the flat layer and the anode;
the pixel light-emitting layer is arranged in the hole on the pixel defining layer and is connected with the anode through the hole on the pixel defining layer;
the cathode is disposed on the pixel defining layer and covers the pixel light emitting layer.
Further, the packaging structure also comprises a packaging layer and packaging glass;
the packaging layer is arranged on the cathode;
the packaging layer is provided with the packaging glass.
Further, the display function layer further includes an organic gap layer;
the pixel definition layer is provided with the organic gap layer, the organic gap layer is positioned on one side of the pixel light emitting layer, and the cathode covers the organic gap layer.
Further, the polarizer and the cover plate are stacked on the lower surface of the substrate in sequence.
Further, the color filter layer is also included;
the color filter layer is arranged between the lower surface of the substrate and the polarizer.
Further, the thin film transistor includes an active layer, a gate insulating layer, a first gate electrode, an etch stopper layer, a source electrode, and a drain electrode;
the active layer is arranged on the buffer layer and is positioned above the fingerprint identification assembly;
the gate insulating layer is arranged on the active layer;
the grid electrode is arranged on the grid electrode insulating layer and is positioned above the active layer;
the etching barrier layer is arranged on the grid electrode;
the etching barrier layer is provided with the source electrode and the drain electrode, the source electrode is connected with the active layer through one hole in the etching barrier layer, and the drain electrode is connected with the active layer through another hole in the etching barrier layer.
Further, the thin film transistor includes a first gate electrode, a first insulating layer, an active layer, a second insulating layer, a second gate electrode, a third insulating layer, a source electrode, and a drain electrode;
the first grid is arranged on the buffer layer and positioned above the fingerprint identification assembly;
the first insulating layer is arranged on the first grid;
the active layer is arranged on the first insulating layer and is positioned above the first grid electrode;
the second insulating layer is arranged on the active layer;
the second grid electrode is arranged on the second insulating layer and is positioned above the active layer;
the third insulating layer is arranged on the second grid;
the source electrode and the drain electrode are arranged on the third insulating layer, the source electrode is connected with the active layer through one hole in the third insulating layer, and the source electrode is connected with the active layer through the other hole in the third insulating layer.
Be different from prior art, above-mentioned technical scheme sets up the fingerprint identification subassembly between the upper surface of thin-film transistor and base plate, and the distance between fingerprint identification subassembly and the apron can be less than the distance between fingerprint identification subassembly and the apron among the current display panel. Through the mode of reducing the transmission path of fingerprint reflection light, improve the recognition rate of fingerprint under being applied to the screen to this satisfies the demand that is applied to the quick fingerprint information of gathering of display panel of fingerprint recognition under the screen.
Drawings
Fig. 1 is a schematic cross-sectional view of a thin film transistor having a top gate structure in a display panel according to the present embodiment;
fig. 2 is a schematic cross-sectional view of a thin film transistor having a bottom gate structure in the display panel according to the present embodiment;
fig. 3 is a schematic cross-sectional view illustrating a tft and a color filter layer with a top gate structure in the display panel according to this embodiment;
fig. 4 is a schematic cross-sectional view illustrating a thin film transistor and a color filter layer having a bottom gate structure in the display panel according to the embodiment of the invention;
fig. 5 is a schematic structural diagram of the fingerprint identification device and the arrangement of the pixel intervals on the pixel light emitting layer in this embodiment.
Description of reference numerals:
1. a cover plate;
2. a polarizer;
3. a substrate;
4. a buffer layer;
5. a packaging layer;
6. a fingerprint identification component;
7. an active layer;
8. a gate insulating layer;
9. a gate electrode;
91. a first gate electrode;
92. a second gate electrode;
10. etching the barrier layer;
11. a source electrode;
12. a drain electrode;
13. a passivation layer;
14. a planarization layer;
15. an anode;
16. a pixel defining layer;
17. an organic gap layer;
18. a pixel light emitting layer;
19. a cathode;
20. packaging glass;
21. a color filter layer.
Detailed Description
To explain technical contents, structural features, and objects and effects of the technical solutions in detail, the following detailed description is given with reference to the accompanying drawings in conjunction with the embodiments.
Referring to fig. 1 to 5, the present embodiment provides a display panel for underscreen fingerprint identification, including a substrate 3, a fingerprint identification component 6, a buffer layer 4, a thin film transistor, a display function layer, a polarizer 2, and a cover plate 1. The fingerprint identification component 6 is arranged on the upper surface of the substrate 3. The fingerprint identification component 6 is provided with the buffer layer 4, and the buffer layer 4 is used for avoiding the short circuit between the fingerprint identification component 6 and the thin film transistor. Such as a nitride (silicon nitride, etc.), an oxide (silicon oxide), or other insulating material. The buffer layer 4 is provided with the thin film transistor, and the thin film transistor is located above the fingerprint identification assembly 6. The Thin Film Transistor (TFT) is used as a switch on the circuit to control whether the circuit is on or off. The thin film transistor is provided with a display function layer, and the display function layer comprises a transparent anode 15, a pixel luminous layer 18 and a reflective cathode 19 which are sequentially arranged from bottom to top. The pixels on the pixel light-emitting layer and the fingerprint identification component 6 are arranged at intervals on the projection plane vertical to the substrate, and the structure is shown in fig. 5. The light-reflecting cathode 19 is used to reflect light emitted from the pixel light-emitting layer 18 to the substrate, and the transparent anode is transparent to the light. When the finger of an operator touches the fingerprint identification component area, the light emitted by the pixel light-emitting layer 18 is reflected by the finger of the operator, and the fingerprint identification component 6 can receive the light signal reflected by the finger and convert the light signal into an electric signal to be read.
Note that, the pixels on the pixel light emitting layer and the fingerprint identification module 6 are arranged at intervals on the projection plane perpendicular to the substrate, and there is no overlapping portion therebetween. Preferably, the fingerprint identification component is arranged below the thin film transistor, so that light rays in the environment are prevented from being received by the fingerprint identification sensor.
Referring to fig. 1 and 2, the polarizer 2 and the cover plate 1(CoverLens) are sequentially stacked on the lower surface of the substrate 3. The cover plate 1 is arranged on one side surface of the polaroid 2 far away from the substrate 3. The cover plate 1 has the functions of impact resistance, scratch resistance, fingerprint resistance, light transmittance enhancement, decoration beautification and the like. The operating personnel comes to slide and press display panel from base plate lower surface direction department, and this is also different from prior art, and prior art is with the apron setting in the upper surface direction department of base plate 3, and this application is in the apron setting the lower surface of base plate 3, the distance between apron and the fingerprint identification subassembly is short, improves fingerprint identification subassembly 6 and detects the efficiency of the light signal after the reflection for fingerprint identification subassembly 6 can gather fingerprint information fast.
It should be noted that the polarizer 2 is used to control the polarization direction of a specific light beam, and mainly converts natural light without polarization into polarized light, so as to generate a bright or dark display effect on the panel.
It is noted that the fingerprint recognition component 6 comprises a respective light sensitive capacitor, a diode or a respective resistor or the like. The optics fingerprint identification technique utilizes the refraction and the reflection principle of light, on the finger of touching the apron was touched in the light irradiation, by behind the finger reflection fingerprint identification subassembly 6 receives, can convert light signal into electricity signal after fingerprint identification subassembly 6 receives to read. Because the reflection of light by the fingerprint valleys and ridges is different, the intensities of reflected light received by the fingerprint identification component 6 by the valleys and ridges are different, and the magnitudes of converted currents or voltages are different.
In the prior art, the transmission path of the fingerprint identification component from which the fingerprint reflection light reaches the lower part is long, and the loss of the fingerprint reflection light is large, so that the sensitivity of the fingerprint identification component can be reduced. Above-mentioned technical scheme sets up the fingerprint identification subassembly between the upper surface of thin-film transistor and base plate, and the distance between fingerprint identification subassembly and the apron can be less than the distance between fingerprint identification subassembly and the apron among the current display panel. Through the mode of reducing the transmission path of fingerprint reflection light, improve the recognition rate of fingerprint under being applied to the screen to this satisfies the demand that is applied to the quick fingerprint information of gathering of display panel of fingerprint recognition under the screen.
Referring to fig. 1 to 4, in the present embodiment, the display function layer includes a passivation layer 13, a planarization layer 14, an anode 15, a pixel defining layer 16, and the like, which are described below:
the passivation layer 13 is disposed on the thin film transistor, and the passivation layer 13 is made of nitride (silicon nitride, etc.), oxide (silicon oxide), or other insulating material. The passivation layer 13 serves to isolate the connection between the metal of the thin film transistor and other metals while having a large dielectric constant.
The passivation layer 13 is provided with the planarization layer 14, and the planarization layer 14 is mainly made of an organic material, such as silicon nitride, polyimide, or other materials with similar characteristics. Preferably, the passivation layer 13 is covered by the flat layer 14, and the flat layer 14 is used for leveling the surface section difference caused by various different layer patterns on the substrate 3 of the display panel, so that good superposition of subsequent film layers is facilitated, and the display effect is improved.
The anode 15 is disposed on the planarization layer 14, and the anode 15 is connected to the source electrode 11 or the drain electrode 12 of the thin film transistor through a hole in the planarization layer. Note that the hole in the planarization layer penetrates through the planarization layer 14 and the passivation layer 13, and the bottom of the hole in the planarization layer is the source electrode 11 or the drain electrode 12 of the thin film transistor. The anode 15 is Indium Tin Oxide (ITO), so that the anode 15 is a transparent anode, and light emitted from the pixel light-emitting layer 18 is transmitted through the transparent anode 15 to the substrate 3.
The planarization layer 14 and the anode 15 are provided with the pixel defining layer 16, and the pixel defining layer 16 is mainly made of an organic material. Note that the bottom of the hole in the pixel defining layer is the anode 15. The pixel light emitting layer 18 is disposed in the hole of the pixel defining layer, and the pixel light emitting layer 18 is connected to the anode 15 through the hole of the pixel defining layer. The pixel light-emitting layer 18 includes a hole transport layer, an electron blocking layer, an organic light-emitting layer, a hole blocking layer, and an electron transport layer. The pixel light emitting layer 18 emits white light, which passes through the color filter layer 21 to obtain three primary colors (R red, G green, and B blue), and then combines the three primary colors to realize color display.
The cathode 19 is disposed on the pixel defining layer 16, and the cathode 19 covers the pixel light emitting layer 18. In order to direct the light emitted from the pixel defining layer 16 toward the substrate, the cathode 19 may be one or more metals of Al (aluminum), Ag (silver) and Au (gold) with high reflectivity. The cathode 19 made of a high-reflectivity material has a light-reflecting property, and can reflect light emitted from the pixel defining layer 16 toward the substrate, thereby forming a bottom emission display panel. Alternatively, the cathode 19 may be a transparent cathode 19, and a layer of metal with high reflectivity is disposed on the cathode 19, and the metal with high reflectivity is used to reflect the light emitted from the pixel defining layer 16 to the substrate direction.
In some embodiments, in order to allow the encapsulation glass 20 to be flatly and horizontally disposed on the substrate 3, the display function layer further includes an organic gap layer 17; the pixel defining layer 16 is provided with the organic gap layer 17. Preferably, the organic gap layer 17 is made of an organic material, and the number of the organic gap layers 17 is plural, so as to control the uniformity of the thickness between the substrate 3 and the encapsulation glass 20. The organic gap layer 17 is located at one side of the pixel light emitting layer 18, and the cathode 19 covers the organic gap layer 17, the pixel light emitting layer 18 and the pixel defining layer 16.
In the present embodiment, in order to encapsulate the display panel to protect the display panel from moisture and oxygen, an encapsulation layer 5 and an encapsulation glass 20 are further included. The cathode 19 is provided with the encapsulation layer 5, and the encapsulation layer 5 may be formed by a cover plate encapsulation technique or a thin film encapsulation technique, for example, a lamination of an inorganic thin film layer and an organic thin film layer is formed on the cathode 19 by the thin film encapsulation technique. The encapsulation layer 5 prevents the electrodes in the display panel from generating bubbles to affect the stability of the display panel. The encapsulation layer 5 is provided with the encapsulation glass 20, and the encapsulation glass 20 is used for protecting the electronic components below.
Referring to fig. 3 and 4, in the present embodiment, a color filter layer 21 is further included, and the color filter layer 21 is disposed between the back surface of the substrate 3 and the polarizer 2. The openmask evaporation method corresponding to the color filter layer 21 not only can achieve high resolution of the OLED display panel, but also the manufacturing technology of the color filter layer 21 is mature and easy to introduce into mass production.
In this embodiment, the thin film transistor may have a top gate structure, and the structure is shown in fig. 1 and fig. 3, which are described herein:
the thin film transistor includes an active layer 7, a gate insulating layer 8, a first gate electrode 91, an etch stopper layer 10, a source electrode 11, and a drain electrode 12. The active layer 7 is arranged on the buffer layer 4, and the active layer 7 is positioned above the fingerprint identification component 6. The active layer 7 is Indium Gallium Zinc Oxide (IGZO) or LTPS. Preferably, the active layer 7 is IGZO.
The gate insulating layer 8 is disposed on the active layer 7, and the gate insulating layer 8 is made of nitride (silicon nitride, etc.), oxide (silicon oxide), or other insulating material. Having a large dielectric constant, the gate insulation layer 8 serves to avoid direct contact between the first gate electrode 91 and the active layer 7.
The first gate electrode 91 is disposed on the gate insulating layer 8, and the first gate electrode 91 is located above the active layer 7. The grid is molybdenum (Mo)/aluminum (Al)/molybdenum (Mo) or titanium (Ti)/aluminum (Al)/titanium (Ti).
The etch stop layer 10 is disposed on the first gate 91, and the etch stop layer 10 is made of nitride (silicon nitride, etc.), oxide (silicon oxide), or other insulating material. Having a large dielectric constant, the etch stop layer 10 serves to protect the first gate electrode 91.
The source electrode 11 and the drain electrode 12 are disposed on the etch stop layer 10, the source electrode 11 is connected to the active layer 7 through one hole on the etch stop layer 10, and the drain electrode 12 is connected to the active layer 7 through another hole on the etch stop layer 10. The source electrode 11 and the drain electrode 12 are disposed on the same layer, the source electrode 11 or the drain electrode 12 may be molybdenum (Mo)/aluminum (Al)/molybdenum (Mo), and the source electrode 11 or the drain electrode 12 may be titanium (Ti)/aluminum (Al)/titanium (Ti).
The thin film transistor has a bottom gate structure and may also have a double gate structure, and the structures are shown in fig. 2 and fig. 4, which will be described herein:
the double-gate thin film transistor has better stability than a single-gate thin film transistor, and the double-gate thin film transistor can better control Vth drift stability and provide more stable current for the display panel. The thin film transistor includes a first gate electrode 91, a first insulating layer, an active layer 7, a second insulating layer, a second gate electrode 92, a third insulating layer, a source electrode 11, and a drain electrode 12. The buffer layer 4 is provided with the first grid 91, and the first grid 91 is located above the fingerprint identification component 6. The first gate electrode 91 is, for example, molybdenum (Mo)/aluminum (Al)/molybdenum (Mo) or titanium (Ti)/aluminum (Al)/titanium (Ti).
The first gate electrode 91 is provided with the first insulating layer, such as nitride (silicon nitride, etc.), oxide (silicon oxide), or other insulating material. Having a large dielectric constant, for avoiding a direct contact between the first gate electrode 91 and the active layer 7.
The active layer 7 is disposed on the first insulating layer, and the active layer 7 is located above the first gate electrode 91. The active layer 7 is Indium Gallium Zinc Oxide (IGZO) or LTPS. Preferably, the active layer 7 is IGZO.
The active layer 7 is provided with the second insulating layer such as nitride (silicon nitride or the like), oxide (silicon oxide), or other insulating material. Having a large dielectric constant, for avoiding direct contact between the second gate 92 and the active layer 7.
The second gate electrode 92 is disposed on the second insulating layer, and the second gate electrode 92 is located above the active layer 7. The second gate electrode 92 may be molybdenum (Mo)/aluminum (Al)/molybdenum (Mo) or titanium (Ti)/aluminum (Al)/titanium (Ti).
The second gate electrode 92 is provided with the third insulating layer, such as nitride (silicon nitride, etc.), oxide (silicon oxide), or other insulating material. Having a large dielectric constant, the third insulating layer serves to protect the second gate electrode 92.
The source electrode 11 and the drain electrode 12 are disposed on the third insulating layer, the source electrode 11 is connected to the active layer 7 through one hole on the third insulating layer, and the source electrode 11 is connected to the active layer 7 through another hole on the third insulating layer. The second gate 92 is disposed between the source 11 and the drain 12. The source electrode 11 and the drain electrode 12 are disposed on the same layer, the source electrode 11 or the drain electrode 12 may be molybdenum (Mo)/aluminum (Al)/molybdenum (Mo), and the source electrode 11 or the drain electrode 12 may be titanium (Ti)/aluminum (Al)/titanium (Ti).
It should be noted that, although the above embodiments have been described herein, the invention is not limited thereto. Therefore, based on the innovative concepts of the present invention, the technical solutions of the present invention can be directly or indirectly applied to other related technical fields by making changes and modifications to the embodiments described herein, or by using equivalent structures or equivalent processes performed in the content of the present specification and the attached drawings, which are included in the scope of the present invention.
Claims (8)
1. A display panel applied to fingerprint identification under a screen is characterized by comprising a substrate, a fingerprint identification assembly, a buffer layer, a thin film transistor, a display functional layer, a polaroid and a cover plate;
the fingerprint identification component is arranged on the upper surface of the substrate;
the buffer layer is arranged on the fingerprint identification assembly;
the thin film transistor is arranged on the buffer layer and is positioned above the fingerprint identification assembly;
the display functional layer is arranged on the thin film transistor and comprises a transparent anode, a pixel light emitting layer and a reflective cathode which are sequentially arranged from bottom to top, pixels on the pixel light emitting layer and the fingerprint identification assembly are arranged at intervals on a projection surface perpendicular to the substrate, and the reflective cathode is used for reflecting light emitted by the pixel light emitting layer to the direction of the substrate.
2. The display panel applied to the identification of the finger print under the screen of claim 1, wherein the display function layer comprises a passivation layer, a flat layer and a pixel defining layer;
the passivation layer is arranged on the thin film transistor;
the passivation layer is provided with the flat layer;
the anode is arranged on the flat layer and is connected with the source electrode or the drain electrode of the thin film transistor through the hole in the flat layer;
the pixel defining layer is arranged on the flat layer and the anode;
the pixel light-emitting layer is arranged in the hole on the pixel defining layer and is connected with the anode through the hole on the pixel defining layer;
the cathode is disposed on the pixel defining layer and covers the pixel light emitting layer.
3. The display panel applied to the identification of the finger print under the screen of claim 2, further comprising an encapsulation layer and an encapsulation glass;
the packaging layer is arranged on the cathode;
the packaging layer is provided with the packaging glass.
4. The display panel applied to the underscreen fingerprint recognition is characterized in that the display function layer further comprises an organic gap layer;
the pixel definition layer is provided with the organic gap layer, the organic gap layer is positioned on one side of the pixel light emitting layer, and the cathode covers the organic gap layer.
5. The display panel applied to underscreen fingerprint identification according to claim 1, wherein the polarizer and the cover plate are stacked on the lower surface of the substrate in sequence.
6. The display panel applied to the underscreen fingerprint recognition is characterized by further comprising a color filter layer;
the color filter layer is arranged between the lower surface of the substrate and the polarizer.
7. The display panel applied to the identification of the finger print under the screen of claim 1, wherein the thin film transistor comprises an active layer, a gate insulating layer, a first gate electrode, an etching barrier layer, a source electrode and a drain electrode;
the active layer is arranged on the buffer layer and is positioned above the fingerprint identification assembly;
the gate insulating layer is arranged on the active layer;
the grid electrode is arranged on the grid electrode insulating layer and is positioned above the active layer;
the etching barrier layer is arranged on the grid electrode;
the etching barrier layer is provided with the source electrode and the drain electrode, the source electrode is connected with the active layer through one hole in the etching barrier layer, and the drain electrode is connected with the active layer through another hole in the etching barrier layer.
8. The display panel applied to the identification of the finger print under the screen of claim 1, wherein the thin film transistor comprises a first gate electrode, a first insulating layer, an active layer, a second insulating layer, a second gate electrode, a third insulating layer, a source electrode and a drain electrode;
the first grid is arranged on the buffer layer and positioned above the fingerprint identification assembly;
the first insulating layer is arranged on the first grid;
the active layer is arranged on the first insulating layer and is positioned above the first grid electrode;
the second insulating layer is arranged on the active layer;
the second grid electrode is arranged on the second insulating layer and is positioned above the active layer;
the third insulating layer is arranged on the second grid;
the source electrode and the drain electrode are arranged on the third insulating layer, the source electrode is connected with the active layer through one hole in the third insulating layer, and the source electrode is connected with the active layer through the other hole in the third insulating layer.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011009207.7A CN112101270B (en) | 2020-09-23 | 2020-09-23 | Display panel applied to under-screen fingerprint identification |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011009207.7A CN112101270B (en) | 2020-09-23 | 2020-09-23 | Display panel applied to under-screen fingerprint identification |
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| CN112101270A true CN112101270A (en) | 2020-12-18 |
| CN112101270B CN112101270B (en) | 2024-09-13 |
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| CN202011009207.7A Active CN112101270B (en) | 2020-09-23 | 2020-09-23 | Display panel applied to under-screen fingerprint identification |
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| CN113809135A (en) * | 2021-09-13 | 2021-12-17 | 武汉天马微电子有限公司 | Display panel and display device |
| CN115568250A (en) * | 2022-08-30 | 2023-01-03 | 惠科股份有限公司 | In-screen fingerprint display screen, manufacturing method thereof and display device |
| CN117500315A (en) * | 2023-12-19 | 2024-02-02 | 惠科股份有限公司 | Touch pixel structure, manufacturing method, display panel and operation method |
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| CN112101270B (en) | 2024-09-13 |
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