CN112101270B - Display panel applied to under-screen fingerprint identification - Google Patents
Display panel applied to under-screen fingerprint identification Download PDFInfo
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- CN112101270B CN112101270B CN202011009207.7A CN202011009207A CN112101270B CN 112101270 B CN112101270 B CN 112101270B CN 202011009207 A CN202011009207 A CN 202011009207A CN 112101270 B CN112101270 B CN 112101270B
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- 238000005530 etching Methods 0.000 claims description 13
- 230000004888 barrier function Effects 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 10
- 238000004806 packaging method and process Methods 0.000 claims description 10
- 239000010410 layer Substances 0.000 abstract description 216
- 239000002346 layers by function Substances 0.000 abstract description 8
- 239000010936 titanium Substances 0.000 description 20
- 229910052782 aluminium Inorganic materials 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 10
- 229910052750 molybdenum Inorganic materials 0.000 description 10
- 239000011733 molybdenum Substances 0.000 description 10
- 229910052719 titanium Inorganic materials 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
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- 230000035945 sensitivity Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
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- 239000003086 colorant Substances 0.000 description 2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
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- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
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- Engineering & Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Multimedia (AREA)
- Theoretical Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Sustainable Development (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses a display panel applied to fingerprint identification under a screen, which comprises a substrate, a fingerprint identification component, a buffer layer, a thin film transistor, a display function layer, a polaroid and a cover plate; the fingerprint identification component is arranged on the upper surface of the substrate; the fingerprint identification component is provided with the buffer layer; the buffer layer is provided with the thin film transistor; the fingerprint identification device comprises a thin film transistor, wherein a display functional layer is arranged on the thin film transistor, the display functional layer comprises a transparent anode, a pixel luminous layer and a reflective cathode, which are sequentially arranged from bottom to top, and pixels on the pixel luminous layer and the fingerprint identification component are arranged at intervals on a projection plane of a vertical substrate. Above-mentioned technical scheme sets up fingerprint identification component between the upper surface of thin film transistor and base plate, and the distance between fingerprint identification component and the apron can be less than the distance between fingerprint identification component and the apron in the current display panel to improve the recognition rate that is applied to the fingerprint under the screen.
Description
Technical Field
The invention relates to the technical field of display panels, in particular to a display panel applied to fingerprint identification under a screen.
Background
The display panels supporting fingerprint recognition are currently available in the market in three types, the first type is integrated on the HOME key at the bottom of the front face, the second type is designed on the back body, and the third type is designed on the screen. After the smart phone enters the full screen era, the industry generally considers that off-screen fingerprints will be a future development trend.
From the technical principle of fingerprint identification, optics, capacitance and ultrasonic waves are three common fingerprint identification modes. Traditional capacitive fingerprint unblock has gradually exited the mainstream market, mainly because fingerprint identification needs fingerprint acquisition window, will influence screen ratio with tendencies, consequently the fingerprint under the screen is consequently generated. Currently known under-screen fingerprint recognition schemes mainly include two directions: one is realized by using an OLED, i.e. optical recognition, and the other is realized by using ultrasonic waves. The recognition sensor is arranged on the back side of the substrate, but the ultrasonic waves have the problem of low recognition rate and recognition speed; the adopted OLED emits light actively, so that the light emission of each sub-pixel point can be controlled accurately while the light and thin screen is ensured, and the recognition rate and accuracy of fingerprints under the screen are high. On the other hand, with the existing TFT (thin film transistor) -LCD (liquid crystal display) technology, the TFT substrate itself is opaque and emits light through the TFT by the bottom LED backlight, and it is difficult for the under-screen sensor to recognize the fingerprint, compared to the self-emission advantage of the OLED.
In the capacitive fingerprint identification component, a finger is one pole of a capacitor, the other pole of the capacitor is a silicon chip array, and the distance between the wave crest and the wave trough of the fingerprint and the sensor forms a capacitance height difference through micro-current generated between a micro-electric field carried by a human body and the capacitive sensor so as to draw the pattern of the fingerprint. The distance between fingerprint identification subassembly and the apron is long, and fingerprint reflection light reaches the transmission path length of fingerprint identification subassembly of below, and the loss of fingerprint reflection light is great, can reduce the sensitivity of fingerprint identification subassembly discernment fingerprint.
In the application number CN201811580411.7, the OLED display panel and the under-screen optical fingerprint identification method, the film space is utilized, the light propagation path is reduced, the signal-to-noise ratio of fingerprint identification receiving light is increased by arranging the light barrier layer, and the sensitivity and the efficiency of fingerprint identification are improved.
Disclosure of Invention
Therefore, it is necessary to provide a display panel for under-screen fingerprint recognition, which solves the problem of insufficient sensitivity of fingerprint recognition components for recognizing fingerprint information.
In order to achieve the above objective, the present embodiment provides a display panel applied to fingerprint identification under a screen, including a substrate, a fingerprint identification component, a buffer layer, a thin film transistor, a display function layer, a polarizer and a cover plate;
the fingerprint identification component is arranged on the upper surface of the substrate;
the fingerprint identification component is provided with the buffer layer;
the buffer layer is provided with the thin film transistor, and the thin film transistor is positioned above the fingerprint identification component;
The fingerprint identification device comprises a fingerprint identification component, a thin film transistor, a display functional layer, a fingerprint identification component and a display functional layer, wherein the thin film transistor is provided with the display functional layer, the display functional layer comprises a transparent anode, a pixel luminous layer and a reflective cathode, the transparent anode, the pixel luminous layer and the reflective cathode are sequentially arranged from bottom to top, pixels on the pixel luminous layer and the fingerprint identification component are arranged at intervals on a projection plane of the vertical substrate, and the reflective cathode is used for reflecting light emitted by the pixel luminous layer to the direction of the substrate.
Further, the display function layer comprises a passivation layer, a flat layer and a pixel definition layer;
The passivation layer is arranged on the thin film transistor;
The passivation layer is provided with the flat layer;
The anode is arranged on the flat layer and is connected with a source electrode or a drain electrode of the thin film transistor through a hole on the flat layer;
the pixel definition layer is arranged on the flat layer and the anode;
The pixel light-emitting layer is arranged in the hole on the pixel definition layer, and the pixel light-emitting layer is connected with the anode through the hole on the pixel definition layer;
The cathode is arranged on the pixel definition layer, and covers the pixel light emitting layer.
Further, the packaging structure also comprises a packaging layer and packaging glass;
the cathode is provided with the packaging layer;
And the packaging layer is provided with the packaging glass.
Further, the display function layer further comprises an organic gap layer;
The pixel definition layer is provided with the organic gap layer, the organic gap layer is positioned on one side of the pixel light-emitting layer, and the cathode covers the organic gap layer.
Further, the polarizer and the cover plate are sequentially stacked on the lower surface of the substrate.
Further, the color filter layer is also included;
The color filter layer is arranged between the lower surface of the substrate and the polaroid.
Further, the thin film transistor includes an active layer, a gate insulating layer, a first gate electrode, an etch stop layer, a source electrode, and a drain electrode;
The active layer is arranged on the buffer layer and is positioned above the fingerprint identification component;
the active layer is provided with the grid insulating layer;
The grid electrode is arranged on the grid electrode insulating layer and is positioned above the active layer;
The grid electrode is provided with the etching barrier layer;
The source electrode and the drain electrode are arranged on the etching barrier layer, the source electrode is connected with the active layer through one hole on the etching barrier layer, and the drain electrode is connected with the active layer through the other hole on the etching barrier layer.
Further, the thin film transistor includes a first gate electrode, a first insulating layer, an active layer, a second insulating layer, a second gate electrode, a third insulating layer, a source electrode, and a drain electrode;
The first grid electrode is arranged on the buffer layer and is positioned above the fingerprint identification component;
The first grid electrode is provided with the first insulating layer;
the active layer is arranged on the first insulating layer and is positioned above the first grid electrode;
The second insulating layer is arranged on the active layer;
The second grid electrode is arranged on the second insulating layer and is positioned above the active layer;
the third insulating layer is arranged on the second grid electrode;
The source electrode and the drain electrode are arranged on the third insulating layer, the source electrode is connected with the active layer through one hole on the third insulating layer, and the source electrode is connected with the active layer through the other hole on the third insulating layer.
In contrast to the prior art, the above-mentioned technical scheme sets up fingerprint recognition component between the upper surface of thin film transistor and base plate, and the distance between fingerprint recognition component and the apron can be less than the distance between fingerprint recognition component and the apron in the current display panel. The fingerprint recognition rate applied to the under-screen fingerprint is improved by reducing the transmission path of the fingerprint reflected light, so that the requirement of rapidly acquiring fingerprint information of the display panel applied to the under-screen fingerprint recognition is met.
Drawings
Fig. 1 is a schematic cross-sectional view of a tft with a top gate structure in a display panel according to the present embodiment;
Fig. 2 is a schematic cross-sectional view of a tft with a bottom gate structure in the display panel according to the present embodiment;
FIG. 3 is a schematic cross-sectional view of a TFT and a color filter layer with a top gate structure in a display panel according to the present embodiment;
FIG. 4 is a schematic cross-sectional view of a TFT and a color filter layer with bottom gate structure in a display panel according to the present embodiment;
Fig. 5 is a schematic structural diagram of the fingerprint recognition component and the pixel interval arrangement on the pixel light emitting layer according to the present embodiment.
Reference numerals illustrate:
1. a cover plate;
2. A polarizer;
3. a substrate;
4. a buffer layer;
5. An encapsulation layer;
6. a fingerprint identification component;
7. an active layer;
8. A gate insulating layer;
9. A gate;
91. A first gate;
92. a second gate;
10. An etch stop layer;
11. A source electrode;
12. a drain electrode;
13. A passivation layer;
14. A flat layer;
15. An anode;
16. A pixel definition layer;
17. an organic gap layer;
18. a pixel light emitting layer;
19. A cathode;
20. Packaging glass;
21. a color filter layer.
Detailed Description
In order to describe the technical content, constructional features, achieved objects and effects of the technical solution in detail, the following description is made in connection with the specific embodiments in conjunction with the accompanying drawings.
Referring to fig. 1 to 5, the present embodiment provides a display panel for under-screen fingerprint recognition, which includes a substrate 3, a fingerprint recognition component 6, a buffer layer 4, a thin film transistor, a display function layer, a polarizer 2 and a cover plate 1. The fingerprint recognition module 6 is disposed on the upper surface of the substrate 3. The fingerprint recognition component 6 is provided with the buffer layer 4, and the buffer layer 4 is used for avoiding short circuit between the fingerprint recognition component 6 and the thin film transistor. Such as a nitride (silicon nitride, etc.), an oxide (silicon oxide), or other insulating material. The buffer layer 4 is provided with the thin film transistor, and the thin film transistor is located above the fingerprint identification component 6. The thin film transistor (ThinFilm Transistor, abbreviated TFT) acts as a switch on the circuit to control the conduction or non-conduction of the circuit. The thin film transistor is provided with a display functional layer, and the display functional layer comprises a transparent anode 15, a pixel luminous layer 18 and a reflective cathode 19 which are sequentially arranged from bottom to top. The pixels on the pixel light-emitting layer and the fingerprint recognition component 6 are arranged at intervals on the projection plane of the vertical substrate, and the structure is shown in fig. 5. The reflective cathode 19 is used to reflect the light emitted from the pixel light emitting layer 18 to the direction of the substrate, and the transparent anode is transparent to the light. The finger of the operator contacts the fingerprint recognition component area, the light emitted by the pixel light emitting layer 18 is reflected by the finger of the operator, and the fingerprint recognition component 6 can receive the light signal reflected by the finger and convert the light signal into an electrical signal for reading.
The pixels on the pixel light emitting layer and the fingerprint recognition module 6 are arranged at intervals on the projection plane of the vertical substrate, and no overlapping part exists between the pixels. Preferably, the fingerprint identification component is also arranged below the thin film transistor, so that light rays in the environment are prevented from being received by the fingerprint identification sensor.
Referring to fig. 1 and 2, the polarizer 2 and the cover plate 1 (CoverLens) are sequentially stacked on the lower surface of the substrate 3. The cover plate 1 is disposed on a surface of the polarizer 2 on a side away from the substrate 3. The cover plate 1 has the functions of preventing impact, scraping, preventing fingerprints, enhancing light transmittance, beautifying and decorating and the like. The operator slides and presses the display panel from the direction of the lower surface of the base plate, which is different from the prior art, in which the cover plate is arranged at the direction of the upper surface of the base plate 3, but the application has the advantages that the cover plate is arranged at the lower surface of the base plate 3, the distance between the cover plate and the fingerprint identification component is short, the efficiency of the fingerprint identification component 6 for detecting the reflected light signal is improved, and the fingerprint identification component 6 can rapidly collect fingerprint information.
It should be noted that, the polarizer 2 is used for controlling the polarization direction of a specific light beam, and mainly converts natural light without polarization into polarized light, so as to make the panel generate a bright or dark display effect.
It is noted that the fingerprint recognition component 6 comprises a corresponding light sensitive capacitor, diode or corresponding resistor or the like. The optical fingerprint identification technology utilizes the refraction and reflection principle of light, when the light irradiates on the finger touching the cover plate, the light is received by the fingerprint identification component 6 after being reflected by the finger, and the fingerprint identification component 6 can convert the light signal into the electrical signal after receiving, thereby reading. The magnitude of the converted current or voltage is different due to the difference in reflection of light by the fingerprint valleys and ridges, and the difference in intensity of the reflected light received by the fingerprint recognition component 6.
In the prior art, the transmission path of fingerprint reflection light reaching the fingerprint identification component below is long, and the loss of fingerprint reflection light is larger, so that the sensitivity of the fingerprint identification component can be reduced. According to the technical scheme, the fingerprint identification component is arranged between the thin film transistor and the upper surface of the substrate, and the distance between the fingerprint identification component and the cover plate is smaller than that between the fingerprint identification component and the cover plate in the existing display panel. The fingerprint recognition rate applied to the under-screen fingerprint is improved by reducing the transmission path of the fingerprint reflected light, so that the requirement of rapidly acquiring fingerprint information of the display panel applied to the under-screen fingerprint recognition is met.
Referring to fig. 1 to 4, in this embodiment, the display function layer includes a passivation layer 13, a planarization layer 14, an anode 15, a pixel definition layer 16, and the like, and is described herein:
The passivation layer 13 is disposed on the thin film transistor, and the passivation layer 13 is made of nitride (silicon nitride, etc.), oxide (silicon oxide), or other insulating materials. The passivation layer 13 is used to isolate the connection between the metal of the thin film transistor and other metals while having a large dielectric constant.
The passivation layer 13 is provided with the planarization layer 14, and the planarization layer 14 is mainly made of an organic material, such as silicon nitride, polyimide, or other materials with similar characteristics. Preferably, the passivation layer 13 is covered by the planarization layer 14, and the planarization layer 14 is used for planarizing in-plane level differences on the substrate 3 of the display panel, which are caused by various layer patterns, so as to facilitate good superposition of subsequent film layers and promote display effects.
The anode 15 is disposed on the flat layer 14, and the anode 15 is connected to the source 11 or the drain 12 of the thin film transistor through a hole on the flat layer. The hole on the flat layer penetrates the flat layer 14 and the passivation layer 13, and the hole bottom of the hole on the flat layer is the source electrode 11 or the drain electrode 12 of the thin film transistor. The anode 15 is indium tin oxide (Indiumtin oxide, ITO) so that the anode 15 is a transparent anode, and light emitted from the pixel light-emitting layer 18 is emitted to the direction of the substrate 3 through the transparent anode 15.
The pixel defining layer 16 is disposed on the planarization layer 14 and the anode 15, and the pixel defining layer 16 is mainly made of an organic material. Note that the bottom of the hole in the pixel defining layer is the anode 15. The pixel light emitting layer 18 is disposed in the hole on the pixel defining layer, and the pixel light emitting layer 18 is connected to the anode 15 through the hole on the pixel defining layer. The pixel light emitting layer 18 includes a hole transporting layer, an electron blocking layer, an organic light emitting layer, a hole blocking layer, and an electron transporting layer. The white light emitted from the pixel light emitting layer 18 passes through the color filter layer 21 to obtain three primary colors (R red, G green and B blue), and the three primary colors are combined to realize color display.
The cathode 19 is provided on the pixel defining layer 16, and the cathode 19 covers the pixel light emitting layer 18. In order to direct the light emitted from the pixel defining layer 16 toward the substrate, the cathode 19 may be one or more metals selected from Al (aluminum), ag (silver), au (gold) with high reflectivity. The cathode 19 made of high reflectivity material has a reflective property, and can reflect the light emitted from the pixel defining layer 16 to the direction of the substrate, thereby forming a bottom-emitting display panel. Alternatively, the cathode 19 may be a transparent cathode 19, and a layer of metal with high reflectivity may be disposed on the cathode 19, where the layer of metal with high reflectivity is used to reflect the light emitted from the pixel defining layer 16 to the substrate direction.
In some embodiments, in order to enable the encapsulation glass 20 to be arranged on the substrate 3 flatly and horizontally, the display function layer further comprises an organic gap layer 17; the pixel defining layer 16 is provided with the organic gap layer 17. Preferably, the organic gap layer 17 is made of an organic material, and the number of the organic gap layers 17 is plural, so as to control the uniformity of the thickness between the substrate 3 and the encapsulation glass 20. The organic gap layer 17 is located at one side of the pixel emission layer 18, and the cathode 19 covers the organic gap layer 17, the pixel emission layer 18, and the pixel definition layer 16.
In this embodiment, in order to encapsulate the display panel to protect the display panel from moisture and oxygen, the display panel further includes an encapsulation layer 5 and an encapsulation glass 20. The cathode 19 is provided with the encapsulation layer 5, and the encapsulation layer 5 may be made by a cover plate encapsulation technology or a thin film encapsulation technology, for example, the thin film encapsulation technology is to make a laminate of an inorganic thin film layer and an organic thin film layer on the cathode 19. The encapsulation layer 5 prevents the electrodes in the display panel from generating bubbles to affect the stability of the display panel. The encapsulation layer 5 is provided with the encapsulation glass 20, and the encapsulation glass 20 is used for protecting the electronic components below.
Referring to fig. 3 and 4, in the present embodiment, the color filter layer 21 is further included, and the color filter layer 21 is disposed between the back surface of the substrate 3 and the polarizer 2. The openmask vapor deposition method corresponding to the color filter layer 21 not only can realize the high resolution of the OLED display panel, but also is very mature in the manufacturing technology of the color filter layer 21, and is easy to lead in mass production.
In this embodiment, the thin film transistor may be a top gate structure, and the structure is shown in fig. 1 and fig. 3, and described herein:
The thin film transistor includes an active layer 7, a gate insulating layer 8, a first gate electrode 91, an etch stopper 10, a source electrode 11, and a drain electrode 12. The active layer 7 is disposed on the buffer layer 4, and the active layer 7 is located above the fingerprint identification component 6. The active layer 7 is indium gallium zinc oxide (indiumgalliumzincoxide, IGZO) or LTPS. Preferably, the active layer 7 is IGZO.
The active layer 7 is provided with the gate insulating layer 8, and the gate insulating layer 8 is made of nitride (silicon nitride, etc.), oxide (silicon oxide), or other insulating material. With a large dielectric constant, the gate insulation layer 8 serves to avoid direct contact between the first gate electrode 91 and the active layer 7.
The first gate electrode 91 is disposed on the gate insulating layer 8, and the first gate electrode 91 is located above the active layer 7. The grid electrode is molybdenum (Mo)/aluminum (Al)/molybdenum (Mo) or titanium (Ti)/aluminum (Al)/titanium (Ti).
The first gate 91 is provided with the etching stopper 10, and the etching stopper 10 is made of nitride (silicon nitride, etc.), oxide (silicon oxide), or other insulating material. With a large dielectric constant, the etch stop layer 10 serves to protect the first gate 91.
The source electrode 11 and the drain electrode 12 are disposed on the etching barrier layer 10, the source electrode 11 is connected to the active layer 7 through one hole on the etching barrier layer 10, and the drain electrode 12 is connected to the active layer 7 through the other hole on the etching barrier layer 10. The source electrode 11 and the drain electrode 12 are provided in the same layer, and the source electrode 11 or the drain electrode 12 may be molybdenum (Mo)/aluminum (Al)/molybdenum (Mo), and the source electrode 11 or the drain electrode 12 may be titanium (Ti)/aluminum (Al)/titanium (Ti).
The thin film transistor is of a bottom gate structure, and can also be of a double gate structure, and the structure is shown in fig. 2 and 4, and is described herein:
The stability of the thin film transistor with the double-gate structure is better than that of the thin film transistor with the single-gate structure, and the thin film transistor with the double-gate structure can better control the Vth drift stability and provide more stable current for the display panel. The thin film transistor includes a first gate electrode 91, a first insulating layer, an active layer 7, a second insulating layer, a second gate electrode 92, a third insulating layer, a source electrode 11, and a drain electrode 12. The buffer layer 4 is provided with the first gate 91, and the first gate 91 is located above the fingerprint recognition component 6. The first gate electrode 91 is, for example, molybdenum (Mo)/aluminum (Al)/molybdenum (Mo) or titanium (Ti)/aluminum (Al)/titanium (Ti).
The first gate electrode 91 is provided with the first insulating layer, such as nitride (silicon nitride, etc.), oxide (silicon oxide), or other insulating material. With a large dielectric constant, the first insulating layer serves to avoid direct contact between the first gate electrode 91 and the active layer 7.
The first insulating layer is provided with the active layer 7, and the active layer 7 is located above the first gate electrode 91. The active layer 7 is indium gallium zinc oxide (indiumgalliumzincoxide, IGZO) or LTPS. Preferably, the active layer 7 is IGZO.
The active layer 7 is provided with the second insulating layer such as nitride (silicon nitride or the like), oxide (silicon oxide) or other insulating material. With a large dielectric constant, the second insulating layer serves to avoid direct contact between the second gate 92 and the active layer 7.
The second gate 92 is disposed on the second insulating layer, and the second gate 92 is located above the active layer 7. The second gate 92 is, for example, molybdenum (Mo)/aluminum (Al)/molybdenum (Mo) or titanium (Ti)/aluminum (Al)/titanium (Ti).
The second gate electrode 92 is provided with the third insulating layer, such as nitride (silicon nitride, etc.), oxide (silicon oxide), or other insulating material. With a relatively large dielectric constant, the third insulating layer serves to protect the second gate 92.
The third insulating layer is provided with the source electrode 11 and the drain electrode 12, the source electrode 11 is connected with the active layer 7 through one hole on the third insulating layer, and the source electrode 11 is connected with the active layer 7 through the other hole on the third insulating layer. The second gate 92 is disposed between the source electrode 11 and the drain electrode 12. The source electrode 11 and the drain electrode 12 are disposed in the same layer, and the source electrode 11 or the drain electrode 12 may be molybdenum (Mo)/aluminum (Al)/molybdenum (Mo), and the source electrode 11 or the drain electrode 12 may be titanium (Ti)/aluminum (Al)/titanium (Ti).
It should be noted that, although the foregoing embodiments have been described herein, the scope of the present invention is not limited thereby. Therefore, based on the innovative concepts of the present invention, alterations and modifications to the embodiments described herein, or equivalent structures or equivalent flow transformations made by the present description and drawings, apply the above technical solution, directly or indirectly, to other relevant technical fields, all of which are included in the scope of the invention.
Claims (7)
1. The display panel applied to the under-screen fingerprint identification is characterized by comprising a substrate, a fingerprint identification component, a buffer layer, a thin film transistor, a display function layer, a polaroid and a cover plate;
the fingerprint identification component is arranged on the upper surface of the substrate;
the fingerprint identification component is provided with the buffer layer;
the buffer layer is provided with the thin film transistor, and the thin film transistor is positioned above the fingerprint identification component;
The display function layer comprises a transparent anode, a pixel luminous layer and a reflective cathode which are sequentially arranged from bottom to top, wherein the pixels on the pixel luminous layer and the fingerprint identification component are arranged at intervals on a projection surface of the vertical substrate, and the reflective cathode is used for reflecting light emitted by the pixel luminous layer to the direction of the substrate;
the display function layer comprises a passivation layer, a flat layer and a pixel definition layer;
The passivation layer is arranged on the thin film transistor;
The passivation layer is provided with the flat layer;
The anode is arranged on the flat layer and is connected with a source electrode or a drain electrode of the thin film transistor through a hole on the flat layer;
the pixel definition layer is arranged on the flat layer and the anode;
The pixel light-emitting layer is arranged in the hole on the pixel definition layer, and the pixel light-emitting layer is connected with the anode through the hole on the pixel definition layer;
The cathode is arranged on the pixel definition layer, and covers the pixel light emitting layer.
2. The display panel for use in off-screen fingerprint recognition according to claim 1, further comprising an encapsulation layer and encapsulation glass;
the cathode is provided with the packaging layer;
And the packaging layer is provided with the packaging glass.
3. The display panel for use in off-screen fingerprint recognition as recited in claim 1, wherein the display function layer further comprises an organic gap layer;
The pixel definition layer is provided with the organic gap layer, the organic gap layer is positioned on one side of the pixel light-emitting layer, and the cathode covers the organic gap layer.
4. The display panel for under-screen fingerprint recognition according to claim 1, wherein the polarizer and the cover plate are sequentially stacked on the lower surface of the substrate.
5. The display panel for use in off-screen fingerprint recognition according to claim 4, further comprising a color filter layer;
The color filter layer is arranged between the lower surface of the substrate and the polaroid.
6. The display panel for off-screen fingerprint recognition according to claim 1, wherein the thin film transistor comprises an active layer, a gate insulating layer, a first gate electrode, an etch stop layer, a source electrode and a drain electrode;
The active layer is arranged on the buffer layer and is positioned above the fingerprint identification component;
the active layer is provided with the grid insulating layer;
The grid electrode is arranged on the grid electrode insulating layer and is positioned above the active layer;
The grid electrode is provided with the etching barrier layer;
The source electrode and the drain electrode are arranged on the etching barrier layer, the source electrode is connected with the active layer through one hole on the etching barrier layer, and the drain electrode is connected with the active layer through the other hole on the etching barrier layer.
7. The display panel for off-screen fingerprint recognition according to claim 1, wherein the thin film transistor comprises a first gate electrode, a first insulating layer, an active layer, a second insulating layer, a second gate electrode, a third insulating layer, a source electrode, and a drain electrode;
The first grid electrode is arranged on the buffer layer and is positioned above the fingerprint identification component;
The first grid electrode is provided with the first insulating layer;
the active layer is arranged on the first insulating layer and is positioned above the first grid electrode;
The second insulating layer is arranged on the active layer;
The second grid electrode is arranged on the second insulating layer and is positioned above the active layer;
the third insulating layer is arranged on the second grid electrode;
The source electrode and the drain electrode are arranged on the third insulating layer, the source electrode is connected with the active layer through one hole on the third insulating layer, and the source electrode is connected with the active layer through the other hole on the third insulating layer.
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| CN202011009207.7A CN112101270B (en) | 2020-09-23 | 2020-09-23 | Display panel applied to under-screen fingerprint identification |
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| CN202011009207.7A CN112101270B (en) | 2020-09-23 | 2020-09-23 | Display panel applied to under-screen fingerprint identification |
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| CN112101270B true CN112101270B (en) | 2024-09-13 |
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| CN113809135B (en) * | 2021-09-13 | 2024-03-05 | 武汉天马微电子有限公司 | Display panel and display device |
| CN115568250A (en) * | 2022-08-30 | 2023-01-03 | 惠科股份有限公司 | In-screen fingerprint display screen, manufacturing method thereof and display device |
| CN117500315B (en) * | 2023-12-19 | 2024-10-18 | 惠科股份有限公司 | Touch pixel structure, manufacturing method, display panel and operation method |
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| CN213365529U (en) * | 2020-09-23 | 2021-06-04 | 福建华佳彩有限公司 | Display panel applied to fingerprint recognition under screen |
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| CN108108718A (en) * | 2018-01-05 | 2018-06-01 | 敦捷光电股份有限公司 | The thin-film transistor display panel that optical finger print recognizes in screen |
| CN109671743B (en) * | 2018-12-06 | 2020-11-06 | 武汉华星光电半导体显示技术有限公司 | Display device and electronic device with under-screen fingerprint identification function |
| CN109685003A (en) * | 2018-12-24 | 2019-04-26 | 武汉华星光电半导体显示技术有限公司 | OLED display panel and the lower optical finger print recognition methods of screen |
| CN110059562B (en) * | 2019-03-18 | 2021-12-14 | 昆山丘钛生物识别科技有限公司 | Display device and electronic device |
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| CN213365529U (en) * | 2020-09-23 | 2021-06-04 | 福建华佳彩有限公司 | Display panel applied to fingerprint recognition under screen |
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