CN111830794B - Immersion liquid thermal effect evaluation device, calibration device and evaluation method of photoetching machine - Google Patents
Immersion liquid thermal effect evaluation device, calibration device and evaluation method of photoetching machine Download PDFInfo
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- CN111830794B CN111830794B CN202010678450.1A CN202010678450A CN111830794B CN 111830794 B CN111830794 B CN 111830794B CN 202010678450 A CN202010678450 A CN 202010678450A CN 111830794 B CN111830794 B CN 111830794B
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- 230000000694 effects Effects 0.000 title claims abstract description 135
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- 238000011156 evaluation Methods 0.000 title claims abstract description 83
- 238000001259 photo etching Methods 0.000 title claims abstract description 14
- 238000001704 evaporation Methods 0.000 claims abstract description 64
- 238000000034 method Methods 0.000 claims abstract description 62
- 230000008020 evaporation Effects 0.000 claims abstract description 61
- 230000008569 process Effects 0.000 claims abstract description 48
- 239000012530 fluid Substances 0.000 claims abstract description 47
- 230000007547 defect Effects 0.000 claims abstract description 33
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- 238000012360 testing method Methods 0.000 claims abstract description 22
- 238000002791 soaking Methods 0.000 claims abstract description 21
- 230000008859 change Effects 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 70
- 238000002474 experimental method Methods 0.000 claims description 32
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
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- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K17/00—Measuring quantity of heat
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Environmental & Geological Engineering (AREA)
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Abstract
The invention discloses an immersion thermal effect evaluation device, a calibration device and an evaluation method of a photoetching machine. The testing system comprises a constant temperature fluid supply system, and the vacuum generator is used for providing negative pressure and a wafer bearing table for thermal effect testing required by the system; the calibration system adopts an evaporation power calibration device to calibrate the test system, the calibration device comprises a heat preservation cover, a heating device, a soaking disc and a temperature measuring device, the calibration device provides constant known heat flux for the test system, and the difference between the input heat flux and the actually measured heat flux is compared to realize the heat flux calibration function. Compared with the traditional testing method, the testing method and the matched equipment have the advantages of real-time online measurement, adjustable accuracy and low relative cost. The immersion liquid thermal effect is evaluated by using a temperature difference curve comparison method and an average thermal power method, so that the defect of the process is favorably examined; the change condition of immersion liquid thermal effect with time is effectively evaluated.
Description
Technical Field
The present invention relates to a lithographic immersion apparatus, and more particularly, to an immersion thermal effect evaluation apparatus for an immersion lithographic apparatus and an evaluation method thereof.
Background
An immersion liquid is filled between the last objective lens of the immersion lithography machine and the substrate to enhance the resolution of the lithography machine. The immersion liquid is also referred to as immersion liquid, and a common immersion liquid is ultrapure water, and a flow field formed by immersion liquid is called an immersion flow field. For reasons of reducing the resistance to movement of the substrate, the immersion flow field only partially covers the substrate, so that the immersion liquid forms a ring of gas-liquid interface with the peripheral gas. Aiming at an immersion scanning projection lithography machine, a substrate can pull an immersion flow field in high-speed scanning movement; the immersion liquid may break through the gas-liquid interface constraints and remain on the substrate surface to form a liquid film or droplet. The thermal effect caused by evaporation of the immersion liquid is not directly measured, so that the defect of lithography caused by the defect is inconvenient to find, and the lithography parameters are not easy to adjust more specifically; immersion liquid is switched between the wafer surface and the dose sensor or support table surface, and immersion liquid begins to evaporate after leakage. In addition, due to factors such as an air knife, unsaturated ambient humidity and the like in the immersion lithography technology, the evaporation process naturally forms under the driving action of the vapor concentration difference above the liquid film or the liquid drop. The existence of the evaporation process inevitably causes the heat absorption of the liquid and the temperature difference in space, the thermal gradient can cause the thermal deformation of the substrate, the photoetching defect is caused, and the photoetching yield is reduced. Therefore, it is necessary to evaluate the thermal effect caused by the immersion liquid to evaluate its impact on the yield of the lithographic process.
While a direct method for measuring the evaporation heat effect is to use a heat flux sensor, such as a gSKIN series heat flux sensor of greenTEG company, switzerland, to realize high-resolution heat flux measurement, since the maximum area of the sensor is only 18mm×18mm, hundreds of sensors are required if the sensor is paved on a wafer with a diameter of 300mm, and the high-precision heat flux sensor is expensive, the scheme for measuring by directly paving the sensor is difficult to effectively apply.
In the chinese patent application No. 201710038521.X, an array type detection system, method and preparation method for a micro droplet evaporation process are proposed by the institute of medical science and health equipment of the national discharge army of applicant, china. The method adopts the principle that strong electrolyte is dissolved in tiny liquid drops, and the concentration of the electrolyte is changed by water evaporation to cause the change of electrical impedance to monitor the evaporation process. The method can directly measure the spatial distribution of the evaporation process by using the electrode array. However, since immersion liquids used in immersion lithography are generally liquids such as ultrapure water having low conductivity, the immersion liquid evaporation process cannot be monitored by this method.
Disclosure of Invention
The invention provides an immersion liquid thermal effect evaluation device and an immersion liquid thermal effect evaluation method for an immersion lithography machine, which are used for solving the problems that the existing immersion lithography machine is high in test cost, cannot effectively test the size of the thermal flux of immersion liquid evaporation transferred to a wafer on line, cannot effectively monitor the immersion liquid evaporation process in real time, has a plurality of lithography defects, is low in photoetching yield, cannot carry out more targeted adjustment on lithography parameters, and the like.
The invention adopts the concrete technical scheme for solving the technical problems that: the utility model provides a immersion heating effect evaluation device of lithography machine, includes work piece platform and the piece platform that holds that the inside has the submergence flow path, holds the piece platform to be fixed in on the work piece platform, its characterized in that: the substrate is carried on the upper surface of the wafer carrying table, a constant temperature fluid is communicated with a flow path in the wafer carrying table, a coil pipe is arranged in the wafer carrying table, a coil pipe inlet is connected with a supply pipe, a coil pipe outlet is connected with a recovery pipe, constant temperature fluid generated by a constant temperature fluid system enters the coil pipe through the supply pipe and the coil pipe inlet, flows in the coil pipe, and flows back to the constant temperature fluid system through the coil pipe outlet and the recovery pipe; the inlet side of the wafer carrying platform flow path is provided with a first temperature sensor, and the outlet side of the wafer carrying platform flow path is provided with a second temperature sensor. The method does not depend on a sensor array, can reduce the test cost, can effectively test the heat flux of the immersion liquid transferred to the wafer by evaporation on line, can effectively monitor the immersion liquid evaporation process in real time, reduces or avoids photoetching defects, improves the photoetching yield, can more pertinently adjust photoetching parameters, and can more effectively monitor the heat effect of leakage immersion liquid evaporation on the wafer. The method can directly evaluate the thermal effect generated by the evaporation of the immersion liquid, and is beneficial to checking the technical defects. The change of immersion liquid thermal effect with time in the whole exposure process can be evaluated.
Preferably, the work table has a heat insulating material surrounding layer substantially surrounding the wafer carrier. Improving the heat insulation protection effect on the wafer bearing table.
Preferably, the heat insulating material surrounding layer adopts aerogel felt with low heat conductivity coefficient. The temperature stability and effectiveness of the immersion heat effect evaluation device in the evaluation process are improved, and the evaluation analysis effective stability is improved.
Preferably, the wafer bearing platform adopts a silicon carbide or copper structure with high heat conduction material. The heat transfer efficiency of the wafer bearing table is improved, and the heat consumption is reduced.
Preferably, the substrate is made of a high heat conduction material structure, rather than a silicon material structure adopted in the actual exposure process. The heat transfer efficiency of the substrate is improved, and the heat consumption is reduced.
Preferably, the coil runs the same as or close to the exposure path arrangement, and the coil coverage area of the coil substantially covers the substrate area. The stability and effectiveness of the thermal effect of the coil on the substrate are improved.
Another object of the present invention is to provide an immersion thermal effect calibration apparatus of a lithographic apparatus, characterized in that: the substrate of one of the above technical schemes is provided with a soaking disc, a calibration temperature sensor is arranged on the soaking disc, a heating wire is arranged above the soaking disc, and the soaking disc and the heating wire are surrounded by a heat insulation cover. The equilibrium, stability, reliability and effectiveness of immersion liquid thermal effect calibration data are improved, and exposure defect information is obtained more probably.
A further object of the present invention is to provide a method for evaluating immersion heating effect of a lithography machine, comprising: comprises the following evaluation method steps
A1. Activating the immersion heating effect evaluation device according to one of the above-described embodiments to cause a constant temperature fluid to flow along a coil path substantially entirely covering the substrate under one of the above-described embodiments;
A2. heating the substrate in one of the above technical schemes by the heating wire through the soaking disc, monitoring the temperature of the substrate by using the first temperature sensor, and detecting the temperature of the constant-temperature fluid by using the second temperature sensor until the readings of the first temperature sensor and the second temperature sensor in one of the above technical schemes reach stability;
A3. according to the temperature difference between the first temperature sensor and the second temperature sensor, calculating the average thermal power W as follows: w=c ρ q dT;
where c is the specific heat capacity of the thermostatic fluid, ρ is the density of the thermostatic fluid, q is the flow rate of the thermostatic fluid, and dT is the temperature difference between the first temperature sensor 813 and the second temperature sensor 823;
A4. acquiring a thermal effect reference value; the thermal effect reference value can be the temperature difference dT obtained by repeated experiments under the condition of no exposure defect, or can be the reference average thermal power W obtained by combining a calibration device;
A5. carrying out a simulated exposure experiment on an immersion thermal effect evaluation device by using exposure experiment process parameters to obtain a thermal effect experimental value;
A6. comparing the thermal effect experimental value with a thermal effect reference value;
A7. if the measured average thermal power W is higher than the reference value, the process parameters employed in the experiment may lead to exposure defects; in the above-mentioned evaluation method step, the evaluation step is not necessarily performed completely in the above-mentioned step sequence, and the description in the above-mentioned step sequence is only for convenience of description of the evaluation method, and if the temperature difference dT is directly used as the thermal effect value, the above-mentioned A2 nd step and A3 rd step need not be performed; the evaluation by using the temperature difference dT and the evaluation by using the average thermal power W belong to two selectable evaluation methods, and if one of the two selectable evaluation methods is selected, the other evaluation method may not be selected, or both of the two evaluation methods may be selected according to the actual evaluation requirement.
Preferably, the simulated exposure experiment comprises the following steps of
B1. Setting exposure test process parameters by using a substrate of an actual exposure material, performing a thermal effect evaluation experiment in the immersion thermal effect evaluation device according to one of the technical schemes and the immersion thermal effect calibration device according to claim 7, and recording a change curve of a temperature difference in a simulated exposure scanning process;
B2. detecting an exposure pattern of a substrate, if the exposure pattern is qualified, taking a temperature difference change curve of the thermal effect evaluation experiment as a temperature difference standard curve, and if the exposure pattern is unqualified, adjusting exposure test process parameters, and carrying out a thermal effect evaluation experiment again until the exposure pattern is qualified;
B3. taking the temperature difference standard curve as a reference for evaluating the immersion liquid thermal effect under the same exposure path;
B4. keeping the exposure path unchanged, replacing a group of new exposure test process parameters, and carrying out a new thermal effect evaluation experiment to obtain a new temperature difference curve as a sample temperature difference curve;
B5. comparing the sample temperature difference curve with the temperature difference standard curve, and if the sample temperature difference curve is higher than the temperature difference standard curve, indicating that exposure defects can be caused by the immersion liquid evaporation cooling effect of the exposure position at the corresponding moment; if the temperature difference curve of the sample is always equal to or lower than the temperature difference standard curve, the immersion liquid evaporation cooling effect under the new process parameters is indicated to not cause exposure defects.
And the visual effectiveness of the acquired reference value and the analysis data reference value on the thermal effect evaluation effect is improved.
Preferably, the temperature difference standard curve sequentially comprises the following segmentation periods:
0-t 1 section: starting an exposure process on a substrate, wherein the length of an exposure path is gradually increased; because a path is formed between the starting position of the exposure path and the second temperature sensor on the recovery pipe, the constant temperature fluid cooled by the immersion liquid evaporation does not reach the second temperature sensor yet; the temperature difference thus monitored is equal to 0, with a delay compared to the moment of occurrence of the immersion evaporation;
t1-t 2: the constant temperature fluid cooled by the immersion liquid evaporation reaches the second temperature sensor, and the temperature difference starts to be detected; in the initial section of the exposure path, residual immersion liquid on the substrate increases rapidly from nothing to nothing due to evaporation;
t 2-t 3: with the gradual development of the exposure paths, the exposure paths are overlapped, newly generated residual immersion liquid can be fused with residual immersion liquid on the previous scanning path, and the evaporation of the immersion liquid is mainly related to the temperature difference and the surface area of a gas-liquid interface, so that the residual immersion liquid fusion has limited enhancement of the evaporation effect, and the monitored temperature difference is slowly increased;
t3 to t 4: the exposure path is developed to a certain extent, the thermal effect caused by the newly generated residual immersion liquid evaporation may be equal to the thermal effect caused by the residual immersion liquid evaporation which completely evaporates and disappears, at this time, the immersion liquid evaporation effect reaches an equilibrium state, and the monitored temperature difference is kept unchanged;
t 4-t 5: at the end of the exposure path, the residual immersion liquid does not continue to increase as the new exposure path overlaps the earlier exposure path, but the original residual immersion liquid may be gradually evaporating and disappearing; therefore, the thermal effect caused by evaporation is gradually weakened, and the monitored temperature difference is gradually reduced;
t5 to t 6: the exposure process is completed, the length of the exposure path is not increased any more, and residual immersion liquid still exists on the substrate and is evaporated continuously, so that the temperature difference which is not equal to 0 can be continuously monitored;
if a sample temperature difference curve 92 is higher than the temperature difference standard curve for a certain period or certain periods, it is indicated that the exposure path is relatively strong in response to the residual immersion liquid evaporation cooling effect generated during the certain period or certain periods, and a large-area exposure defect may be generated;
if the sample temperature difference curve has a small protrusion in the middle section higher than the temperature difference standard curve, it is indicated that a large residual droplet may be generated at the corresponding exposure position, and a local exposure defect may be generated.
The accuracy and effectiveness of the segmentation comparison of the temperature difference standard curve to the sample temperature difference curve and the reference are improved, and the accuracy, reliability and effectiveness of the acquisition of the exposure defect information are improved.
The beneficial effects of the invention are as follows: the method does not depend on a sensor array, can reduce the test cost, can effectively test the heat flux of the immersion liquid transferred to the wafer by evaporation on line, can effectively monitor the immersion liquid evaporation process in real time, reduces or avoids photoetching defects, improves the photoetching yield, can more pertinently adjust photoetching parameters, and can more effectively monitor the heat effect of leakage immersion liquid evaporation on the wafer. The method can directly evaluate the thermal effect generated by the evaporation of the immersion liquid, and is beneficial to checking the technical defects. The change of immersion liquid thermal effect with time in the whole exposure process can be evaluated. The accuracy and effectiveness of the segmentation comparison of the temperature difference standard curve to the sample temperature difference curve and the reference are improved, and the accuracy, reliability and effectiveness of the acquisition of the exposure defect information are improved.
Drawings
The invention is described in further detail below with reference to the drawings and the detailed description.
FIG. 1 is a schematic diagram of a immersion heating effect evaluation apparatus of a lithographic apparatus according to the present invention.
FIG. 2 is a schematic diagram showing the structure of a coil in an immersion heating effect evaluation apparatus of a lithography machine according to the present invention.
FIG. 3 is a schematic view of an exposure path of a scanning stepper in an immersion thermal effect evaluation apparatus of a lithographic apparatus according to the present invention.
Fig. 4 is a schematic view of an exposure path in the exposure path unit in fig. 3.
FIG. 5 is a schematic diagram of measurement results obtained by the immersion heat effect evaluation device, the calibration device and the evaluation method of the lithography machine.
FIG. 6 is a schematic diagram of the immersion thermal effect calibration apparatus of the lithographic apparatus of the present invention.
Detailed Description
Example 1:
in the embodiments shown in fig. 1, 2, 3 and 4, an immersion heat effect evaluation apparatus of a lithographic apparatus includes a workpiece table 7 and a wafer carrying table 8 with an immersion flow path therein, the wafer carrying table 8 is fixed on the workpiece table 7, an opening 32 is provided on the wafer carrying table 8, the opening 32 is connected to a vacuum generator 01, a substrate is carried on the upper surface of the wafer carrying table, the substrate 3 is adsorbed on the top surface of the wafer carrying table 8 by the negative pressure provided by the vacuum generator 01, a constant temperature fluid is introduced into the flow path inside the wafer carrying table 8, a coil 81 (see fig. 2) is provided inside the wafer carrying table 8, a coil inlet 811 is connected with a supply pipe 812, a coil outlet 821 is connected with a recovery pipe 822, the constant temperature fluid generated by the constant temperature fluid system 02 enters the coil 81 (see fig. 1 and 2) through the supply pipe 812 and the coil inlet 811, and after flowing in the coil 81, flows back to the constant temperature fluid system 02 through the coil outlet 821 and the recovery pipe 822; the first temperature sensor 813 is installed on the inlet side of the wafer stage 8 flow path, and the second temperature sensor 823 is installed on the outlet side of the wafer stage flow path. Alternatively, the constant temperature fluid provided by the constant temperature fluid system may be water, the average temperature is equal to the temperature of the substrate 3, the temperature fluctuation range is within + -0.01 ℃, and the flow rate is (0.25 + -0.005) L/min. Further, a first temperature sensor 813 is provided in the supply pipe 812, and a second temperature sensor 823 is provided in the recovery pipe 821. Further, by installing the first temperature sensor 813 and the second temperature sensor 823 at positions close to the coil inlet 811 and the coil outlet 821, respectively, it is possible to reduce the transmission path of the fluid outside the carrier 8 as much as possible, and thus to reduce heat interference. The work table 7 has a heat insulating material surrounding layer substantially surrounding the wafer stage. The heat insulating material surrounding layer adopts aerogel felt with low heat conductivity coefficient. The wafer bearing platform 8 is made of silicon carbide or copper material with high heat conduction material. In the thermal effect evaluation process, the substrate 3 adopts a high heat conduction material structure, not a silicon material structure adopted in the actual exposure process. The coil path of the coil 81 runs the same as or close to the exposure path arrangement, and the coil coverage area of the coil 81 substantially covers the area of the substrate 3.
Example 2:
in the embodiment shown in fig. 6, a soaking plate 1002 is built in above the substrate 3 in the embodiment 1, a calibration temperature sensor 1001 is arranged on the soaking plate 1002, a heating wire 1003 is installed above the soaking plate 1002, and a heat insulation cover 1004 surrounds the soaking plate 1002 and the heating wire 1003. The insulating cover 1004 is made of a low thermal conductivity material to reduce environmental interference. The substrate 3 is heated by the soaking plate 1002 using the heating wire 1003, and the temperature of the substrate can be monitored by the calibration temperature sensor 1001 to adjust the heating power. The power of the heating wire 1003 is controlled to stabilize the indication of the calibration temperature sensor 1001, the thermal effect evaluation apparatus of example 1 is operated to flow the constant temperature fluid in the coil 81, and the second temperature sensor 823 can monitor the temperature of the constant temperature fluid. Otherwise, the same as in example 1 was used.
Example 3:
in the embodiments shown in fig. 1, 2, 3, 4, 5 and 6, a method for evaluating immersion heat effect of a lithography machine includes the following evaluation method steps:
A1. operating the immersion thermal effect evaluation apparatus of example 1 to cause a constant temperature fluid to flow along a coil path substantially completely covering the underside of the substrate of example 1;
A2. heating the substrate in the embodiment 1 by the heating wire in the embodiment 2 through a soaking disc, monitoring the temperature of the substrate by using a first temperature sensor, and detecting the temperature of constant-temperature fluid by using a second temperature sensor until the readings of the first temperature sensor and the second temperature sensor in the embodiment 1 are stabilized;
A3. according to the temperature difference between the first temperature sensor and the second temperature sensor, calculating the average thermal power W as follows: w=c ρ q dT;
where c is the specific heat capacity of the thermostatic fluid, ρ is the density of the thermostatic fluid, q is the flow rate of the thermostatic fluid, and dT is the temperature difference between the first temperature sensor 813 and the second temperature sensor 823;
A4. acquiring a thermal effect reference value; the thermal effect reference value can be the temperature difference dT obtained by repeated experiments under the condition of no exposure defect, or can be the reference average thermal power W obtained by combining a calibration device;
A5. carrying out a simulated exposure experiment on an immersion thermal effect evaluation device by using exposure experiment process parameters to obtain a thermal effect experimental value; the exposure test process parameters include ambient humidity, material of the photosensitive coating on the surface of the substrate 3, scanning speed and the like.
Comparing the thermal effect experimental value in the simulated exposure experiment with the thermal effect reference value;
A7. if the measured average thermal power W is higher than the reference value, the process parameters employed in the experiment may lead to exposure defects. The reference value of the average thermal power W may be obtained by an analysis method such as theory, simulation or experiment. The method for evaluating the thermal effect by using the average thermal power is more suitable for evaluating the thermal effect under the condition of larger residual immersion liquid area;
in the above-mentioned evaluation method step, the evaluation step is not necessarily performed completely in the above-mentioned step sequence, and the description in the above-mentioned step sequence is only for convenience of description of the evaluation method, and if the temperature difference dT is directly used as the thermal effect value, the above-mentioned A2 nd step and A3 rd step need not be performed; the evaluation by using the temperature difference dT and the evaluation by using the average thermal power W belong to two selectable evaluation methods, and if one of the two selectable evaluation methods is selected, the other evaluation method may not be selected, or both of the two evaluation methods may be selected according to the actual evaluation requirement.
The simulated exposure experiment comprises the following steps:
B1. using a substrate of an actual exposure material, setting exposure test process parameters, performing a thermal effect evaluation experiment in the immersion thermal effect evaluation device described in the embodiment 1 and the immersion thermal effect calibration device described in the claim 7, and recording a change curve of a temperature difference in a simulated exposure scanning process;
B2. detecting an exposure pattern of a substrate, if the exposure pattern is qualified, taking a temperature difference change curve of the thermal effect evaluation experiment as a temperature difference standard curve, and if the exposure pattern is unqualified, adjusting exposure test process parameters, and carrying out a thermal effect evaluation experiment again until the exposure pattern is qualified;
B3. taking the temperature difference standard curve as a reference for evaluating the immersion liquid thermal effect under the same exposure path;
B4. keeping the exposure path unchanged, replacing a group of new exposure test process parameters, and carrying out a new thermal effect evaluation experiment to obtain a new temperature difference curve as a sample temperature difference curve;
B5. comparing the sample temperature difference curve with the temperature difference standard curve, and if the sample temperature difference curve is higher than the temperature difference standard curve, indicating that exposure defects can be caused by the immersion liquid evaporation cooling effect of the exposure position at the corresponding moment; if the temperature difference curve of the sample is always equal to or lower than the temperature difference standard curve, the immersion liquid evaporation cooling effect under the new process parameters is indicated to not cause exposure defects.
The temperature difference standard curve sequentially comprises the following segmentation periods:
0-t 1 section: starting an exposure process on the substrate 3, the exposure path length s gradually increasing; since there is a path between the start of the exposure path 36 and the second temperature sensor 823 on the recovery tube 822, the constant temperature fluid cooled by the immersion evaporation does not reach the second temperature sensor 823 yet; the temperature difference dT thus monitored is equal to 0, with a delay compared to the moment of occurrence of the immersion evaporation;
t1-t 2: the constant temperature fluid cooled by the immersion evaporation reaches the second temperature sensor 823, starting to monitor the temperature difference dT; in the initial stage of the exposure path 36, the residual immersion liquid on the substrate 3 increases from none to none, and the temperature difference dT caused by evaporation increases rapidly;
t 2-t 3: with the progressive development of the exposure path 36, the exposure path 36 will overlap, and newly generated residual immersion liquid may be fused with residual immersion liquid on the previous scanning path, and since immersion evaporation is mainly related to the temperature difference and the surface area of the gas-liquid interface, the residual immersion liquid fusion has limited enhancement of evaporation, and the monitored temperature difference dT increases slowly;
t3 to t 4: the exposure path 36 is developed to such an extent that the thermal effect of the newly generated residual immersion liquid evaporation may be equal to the thermal effect of the residual immersion liquid evaporation which completely evaporates and disappears, at which time the immersion liquid evaporation reaches an equilibrium state and the monitored temperature difference dT remains unchanged;
t 4-t 5: at the end of the exposure path 36, residual immersion liquid does not continue to increase, as the new exposure path 32 overlaps the earlier exposure path 32, but the original residual immersion liquid may be gradually evaporating and disappearing; so that the thermal effect caused by evaporation gradually weakens, and the monitored temperature difference dT gradually decreases;
t5 to t 6: the exposure process has been completed and the length s of the exposure path 36 no longer increases, but the residual immersion liquid still on the substrate 3 continues to evaporate, so that a temperature difference dT which is not equal to 0 can still be continuously monitored;
if a sample temperature difference curve 92 is higher than the temperature difference standard curve for a certain period or certain periods, it is indicated that the exposure path is relatively strong in response to the residual immersion liquid evaporation cooling effect generated during the certain period or certain periods, and a large-area exposure defect may be generated;
if the sample temperature difference curve has a small protrusion in the middle section higher than the temperature difference standard curve, it is indicated that a large residual droplet may be generated at the corresponding exposure position, and a local exposure defect may be generated.
More specifically: if a sample temperature difference curve 92 is higher than the temperature difference standard curve 91 in the section t1-t 3, it is indicated that the residual immersion liquid generated in the initial section of the exposure path 32 has a strong evaporative cooling effect, and a large-area exposure defect may be generated; if the sample temperature difference curve 92 shows a small protrusion higher than the temperature difference standard curve 91 in the middle section, it is indicated that a large residual droplet 43 may be generated at the corresponding exposure position, and a local exposure defect may be generated. The other steps are the same as those in example 1 and example 2.
During use, the environment temperature of the system is stabilized at the system temperature T.
The substrate 3 is placed and the workpiece stage 7 is moved to a position outside the immersion flow field 4.
The constant temperature fluid system is started, the reading T1 of the first temperature sensor 813 and the reading T2 of the second temperature sensor 823 are monitored, after the reading number is stable, the system enters a working condition to be tested, and at the moment, the temperature relationship T=T1=T2 is approximately formed.
As shown in fig. 3 and 4, the workpiece stage 7 carries the wafer carrying stage 8 and the substrate 3, performs scanning stepping movement according to a set path, and performs a substrate exposure process; during exposure, the immersion flow field 4 can also be considered to move along an exposure path 32 relative to the substrate 3. A plurality of substrate units 31 (industry term die, each substrate unit 31 is a chip of the final product) are set on the substrate 3. The exposure path 36 is composed of a straight scanning path and a curved stepping path, and in the scanning motion, the laser beam is projected onto the substrate unit 31 with the integrated circuit pattern; after the completion of the exposure path scanning of one substrate unit 31, the substrate 3 is moved stepwise to the scanning start position of the next substrate unit 31. The complete exposure path of substantially the entire substrate 3 is shown in fig. 4, and the exposure of all the substrate units 31 is completed line by line.
In the exposure process of the substrate, residual immersion liquid generated by the immersion flow field 4 is left on the substrate 3 and is evaporated, and the cooling effect caused by evaporation firstly causes the temperature of the substrate 3 to be reduced; due to the high heat conducting nature of the susceptor 8, a decrease in the temperature of the substrate 3 will cause a decrease in the temperature of the fluid in the coil 81;
the fluid in the coil with reduced temperature flows into the recovery tube 822, the temperature of which is detected by the second temperature sensor 823, reading T2; since the indication of the first temperature sensor 813 on the supply pipe 812 is substantially unchanged, the temperature relationship at this time is: t=t1 > T2. Note that the temperature difference dt=t1-T2, which reflects the thermal effect of the immersion evaporation on the substrate 3.
In the description of the positional relationship of the present invention, the terms such as "inner", "outer", "upper", "lower", "left", "right", and the like, which indicate an orientation or positional relationship based on that shown in the drawings, are merely for convenience of description of the embodiments and for simplification of the description, and do not indicate or imply that the apparatus or element in question must have a specific orientation, be constructed and operated in a specific orientation, and thus are not to be construed as limiting the present invention.
The foregoing and construction describes the basic principles, principal features and advantages of the present invention product, as will be appreciated by those skilled in the art. The foregoing examples and description are provided to illustrate the principles of the invention and to provide various changes and modifications without departing from the spirit and scope of the invention as defined by the appended claims. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (9)
1. A immersion liquid thermal effect evaluation method of a photoetching machine is characterized by comprising the following steps of:
adopts the immersion thermal effect evaluation device and the immersion thermal effect calibration device with the following structures,
the immersion thermal effect evaluation device comprises a workpiece table and a wafer carrying table with an immersion flow path inside, wherein the wafer carrying table is fixed on the workpiece table, the upper surface of the wafer carrying table carries a substrate, a constant temperature fluid is communicated with the flow path inside the wafer carrying table, a coil pipe is arranged inside the wafer carrying table, an inlet of the coil pipe is connected with a supply pipe, an outlet of the coil pipe is connected with a recovery pipe, constant temperature fluid generated by a constant temperature fluid system enters the coil pipe through the supply pipe and the inlet of the coil pipe, and flows back to the constant temperature fluid system through the outlet of the coil pipe and the recovery pipe after flowing in the coil pipe; the inlet side of the wafer carrying platform flow path is provided with a first temperature sensor, and the outlet side of the wafer carrying platform flow path is provided with a second temperature sensor;
the immersion heat effect calibration device is characterized in that a soaking disc is arranged above a substrate of the immersion heat effect evaluation device, a calibration temperature sensor is arranged on the soaking disc, a heating wire is arranged above the soaking disc, and a heat insulation cover is surrounded on the soaking disc and the heating wire;
comprises the following evaluation method steps
A1. Operating the immersion thermal effect evaluation device to cause a constant temperature fluid to flow along a coil path substantially completely covering the underside of the substrate;
A2. heating the substrate by the heating wire through a soaking disc, monitoring the temperature of the substrate by using a first temperature sensor, and detecting the temperature of constant-temperature fluid by using a second temperature sensor until the readings of the first temperature sensor and the second temperature sensor reach stability;
A3. according to the temperature difference between the first temperature sensor and the second temperature sensor, calculating the average thermal power W as follows: w=c ρ q dT; where c is the specific heat capacity of the thermostatic fluid, ρ is the density of the thermostatic fluid, q is the flow rate of the thermostatic fluid, dT is the temperature difference between the first temperature sensor and the second temperature sensor;
A4. acquiring a thermal effect reference value, wherein the thermal effect reference value is a reference average thermal power W obtained by combining a calibration device;
A5. carrying out a simulated exposure experiment on an immersion thermal effect evaluation device by using exposure experiment process parameters to obtain a thermal effect experimental value;
A6. comparing the thermal effect experimental value with a thermal effect reference value;
A7. if the measured average thermal power W is higher than the reference value, the process parameters employed in the experiment may lead to exposure defects.
2. A immersion liquid thermal effect evaluation method of a photoetching machine is characterized by comprising the following steps of:
adopts the immersion thermal effect evaluation device and the immersion thermal effect calibration device with the following structures,
the immersion thermal effect evaluation device comprises a workpiece table and a wafer carrying table with an immersion flow path inside, wherein the wafer carrying table is fixed on the workpiece table, the upper surface of the wafer carrying table carries a substrate, a constant temperature fluid is communicated with the flow path inside the wafer carrying table, a coil pipe is arranged inside the wafer carrying table, an inlet of the coil pipe is connected with a supply pipe, an outlet of the coil pipe is connected with a recovery pipe, constant temperature fluid generated by a constant temperature fluid system enters the coil pipe through the supply pipe and the inlet of the coil pipe, and flows back to the constant temperature fluid system through the outlet of the coil pipe and the recovery pipe after flowing in the coil pipe; the inlet side of the wafer carrying platform flow path is provided with a first temperature sensor, and the outlet side of the wafer carrying platform flow path is provided with a second temperature sensor;
the immersion heat effect calibration device is characterized in that a soaking disc is arranged above a substrate of the immersion heat effect evaluation device, a calibration temperature sensor is arranged on the soaking disc, a heating wire is arranged above the soaking disc, and a heat insulation cover is surrounded on the soaking disc and the heating wire;
comprises the following evaluation method steps
A-1, starting the immersion thermal effect evaluation device to enable constant temperature fluid to flow along a coil path which substantially completely covers the lower part of the substrate;
a-2, obtaining a thermal effect reference value; the thermal effect reference value is the temperature difference dT under the condition of no exposure defect obtained through repeated experiments;
a-3, carrying out a simulated exposure experiment on an immersion thermal effect evaluation device by using exposure experiment process parameters to obtain a thermal effect experimental value;
a-4, comparing the thermal effect experimental value with a thermal effect reference value;
a-5. If the thermal effect experimental value is higher than the thermal effect reference value, the process parameters used in the experiment may cause exposure defects.
3. The immersion liquid thermal effect evaluation method according to claim 1, wherein: the simulated exposure experiment comprises the following steps of
B1. Setting exposure test process parameters by using a substrate of an actual exposure material, performing a thermal effect evaluation experiment in the immersion thermal effect evaluation device and the immersion thermal effect calibration device, and recording a change curve of a temperature difference in a simulated exposure scanning process;
B2. detecting an exposure pattern of a substrate, if the exposure pattern is qualified, taking a temperature difference change curve of the thermal effect evaluation experiment as a temperature difference standard curve, and if the exposure pattern is unqualified, adjusting exposure test process parameters, and carrying out a thermal effect evaluation experiment again until the exposure pattern is qualified;
B3. taking the temperature difference standard curve as a reference for evaluating the immersion liquid thermal effect under the same exposure path;
B4. keeping the exposure path unchanged in the steps, replacing a group of new exposure test process parameters, and developing a new thermal effect evaluation experiment to obtain a new temperature difference curve serving as a sample temperature difference curve;
B5. comparing the sample temperature difference curve with the temperature difference standard curve, and if the sample temperature difference curve is higher than the temperature difference standard curve, indicating that exposure defects can be caused by the immersion liquid evaporation cooling effect of the exposure position at the corresponding moment; if the temperature difference curve of the sample is always equal to or lower than the temperature difference standard curve, the immersion liquid evaporation cooling effect under the new process parameters is indicated to not cause exposure defects.
4. The immersion liquid thermal effect evaluation method according to claim 3, wherein: the temperature difference standard curve sequentially comprises the following segmentation periods:
0-t 1 section: starting an exposure process on a substrate, wherein the length of an exposure path is gradually increased; because a path is formed between the starting position of the exposure path and the second temperature sensor on the recovery pipe, the constant temperature fluid cooled by the immersion liquid evaporation does not reach the second temperature sensor yet; the temperature difference thus monitored is equal to 0, with a delay compared to the moment of occurrence of the immersion evaporation;
t1-t 2: the constant temperature fluid cooled by the immersion liquid evaporation reaches the second temperature sensor, and the temperature difference starts to be detected; in the initial section of the exposure path, residual immersion liquid on the substrate increases rapidly from nothing to nothing due to evaporation;
t 2-t 3: with the gradual development of the exposure paths, the exposure paths are overlapped, newly generated residual immersion liquid can be fused with residual immersion liquid on the previous scanning path, and the evaporation of the immersion liquid is mainly related to the temperature difference and the surface area of a gas-liquid interface, so that the residual immersion liquid fusion has limited enhancement of the evaporation effect, and the monitored temperature difference is slowly increased;
t3 to t 4: the exposure path is developed to a certain extent, the thermal effect caused by the newly generated residual immersion liquid evaporation may be equal to the thermal effect caused by the residual immersion liquid evaporation which completely evaporates and disappears, at this time, the immersion liquid evaporation effect reaches an equilibrium state, and the monitored temperature difference is kept unchanged;
t 4-t 5: at the end of the exposure path, the residual immersion liquid does not continue to increase as the new exposure path overlaps the earlier exposure path, but the original residual immersion liquid is gradually evaporating and disappearing; therefore, the thermal effect caused by evaporation is gradually weakened, and the monitored temperature difference is gradually reduced;
t5 to t 6: the exposure process is completed, the length of the exposure path is not increased any more, and residual immersion liquid still exists on the substrate and is evaporated continuously, so that the temperature difference which is not equal to 0 can be continuously monitored;
if a sample temperature difference curve is higher than a temperature difference standard curve in a certain period or a certain period, the exposure path has stronger evaporation cooling effect on residual immersion liquid generated in the certain period or the certain period, and large-area exposure defects can be generated;
if the sample temperature difference curve has a small protrusion in the middle section higher than the temperature difference standard curve, it is indicated that a large residual droplet may be generated at the corresponding exposure position, and a local exposure defect may be generated.
5. The immersion heating effect evaluation method of a lithography machine according to claim 1, wherein: the substrate adopts a high heat conduction material structure instead of a silicon material structure adopted in the actual exposure process.
6. The immersion heating effect evaluation method of a lithography machine according to claim 1, wherein: the coil runs the same as or similar to the exposure path arrangement, and the coil coverage area of the coil substantially covers the substrate area.
7. The immersion heating effect evaluation method of a lithography machine according to claim 1, wherein: the workpiece stage has an insulating material surrounding layer substantially surrounding the wafer carrier.
8. The immersion heating effect evaluation method of a lithography machine according to claim 7, wherein: the heat insulation material surrounding layer adopts aerogel felt with low heat conductivity coefficient.
9. The immersion heating effect evaluation method of a lithography machine according to claim 1, wherein: the wafer bearing table adopts a silicon carbide or copper structure with high heat conduction materials.
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|---|---|---|---|---|
| US6889763B1 (en) * | 2000-10-23 | 2005-05-10 | Advanced Micro Devices, Inc. | System for rapidly and uniformly cooling resist |
| JP2006287158A (en) * | 2005-04-05 | 2006-10-19 | Nikon Corp | Gas supplying apparatus, exposure apparatus and method of manufacturing device |
| US20070146664A1 (en) * | 2005-12-22 | 2007-06-28 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and method of calibrating a lithographic apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6889763B1 (en) * | 2000-10-23 | 2005-05-10 | Advanced Micro Devices, Inc. | System for rapidly and uniformly cooling resist |
| JP2006287158A (en) * | 2005-04-05 | 2006-10-19 | Nikon Corp | Gas supplying apparatus, exposure apparatus and method of manufacturing device |
| US20070146664A1 (en) * | 2005-12-22 | 2007-06-28 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and method of calibrating a lithographic apparatus |
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