CN111328174A - Reaction chamber and plasma generating method - Google Patents
Reaction chamber and plasma generating method Download PDFInfo
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- CN111328174A CN111328174A CN201811542254.0A CN201811542254A CN111328174A CN 111328174 A CN111328174 A CN 111328174A CN 201811542254 A CN201811542254 A CN 201811542254A CN 111328174 A CN111328174 A CN 111328174A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/42—Plasma torches using an arc with provisions for introducing materials into the plasma, e.g. powder, liquid
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
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Abstract
The invention provides a reaction chamber and a plasma generating method, comprising a chamber body, an upper electrode mechanism and a plasma auxiliary excitation device, wherein the plasma auxiliary excitation device comprises an induced gas accommodating part, a gas inlet and a gas outlet, two ends of the induced gas accommodating part are respectively communicated with the gas inlet and the gas outlet, and the gas outlet is also communicated with the inside of the chamber body; the plasma-induced gas can flow into the chamber body after being ignited in the induced gas accommodating part so as to assist the upper electrode mechanism to ignite the process gas in the chamber body. Introducing plasma induction gas into the induction gas accommodating part through the gas inlet, and enabling the plasma induction gas to flow into the cavity body through the gas outlet after the plasma induction gas is started; the upper electrode mechanism is turned on to ignite the process gas within the chamber body. The reaction chamber and the plasma generating method provided by the invention can prevent the plasma from bombarding the substrate, thereby avoiding damaging a film layer on the substrate and improving the process effect of the processed substrate.
Description
Technical Field
The invention relates to the technical field of semiconductor process equipment, in particular to a reaction chamber and a plasma generating method.
Background
At present, with the development of an integrated circuit process, the size of a hole is gradually reduced, and the aspect ratio is gradually increased, in a tungsten filling process, a thin tungsten nucleation layer is generally generated on the inner wall of the hole, then an auxiliary gas is introduced into a reaction chamber, and the auxiliary gas is excited to form a plasma, a passivation layer is formed on the nucleation layer at the hole, and then a host material (Bluk) is filled into the hole.
As shown in fig. 1, the reaction chamber in the prior art includes an inlet pipe 11 for delivering an auxiliary gas, a rf source 12 connected to an outer wall of the reaction chamber, and a rf bias source 14 connected to a susceptor 13, wherein at the beginning of a passivation stage, since the pressure in the reaction chamber is low, the rf source 12 is connected to the outer wall of the reaction chamber, and the rf power loaded into the reaction chamber is weak, it is difficult to excite the auxiliary gas to form a plasma, therefore, the rf bias source 14 needs to load the rf power to the susceptor 13 to ignite the auxiliary gas, and then the rf source 12 loads the rf power into the reaction chamber until the rf source 12 can maintain the formation of the plasma, and then the rf bias source 14 is turned off.
However, when the RF bias source 14 applies RF power to the susceptor 13, the susceptor 13 generates a large negative bias voltage, which attracts a large amount of high-energy plasma to bombard the substrate 15 placed on the susceptor 13, thereby damaging the nucleation layer previously formed on the inner wall of the hole and affecting the subsequent filling of the bulk material.
Disclosure of Invention
The invention aims to at least solve one of the technical problems in the prior art, and provides a reaction chamber and a plasma generating method, which can prevent plasma from bombarding a substrate, thereby avoiding damaging a film layer on the substrate and improving the process effect of the processed substrate.
The reaction chamber comprises a chamber body, an upper electrode mechanism and a plasma auxiliary excitation device, wherein,
the plasma auxiliary excitation device comprises an induction gas accommodating part, a gas inlet and a gas outlet, wherein two ends of the induction gas accommodating part are respectively communicated with the gas inlet and the gas outlet, and the gas outlet is also communicated with the inside of the cavity body;
the plasma-induced gas can flow into the chamber body after being ignited in the induced gas accommodating part so as to assist the upper electrode mechanism in igniting the process gas in the chamber body.
Preferably, the plasma auxiliary excitation device comprises a cathode part and a power supply, wherein the cathode part is electrically connected with the negative electrode of the power supply;
one end of the cathode component is provided with the air inlet, and the other end of the cathode component is provided with the air outlet; the inside of the cathode member forms the induced gas containing portion.
Preferably, the cathode member is a cathode tube, the inside of the cathode tube is filled with an insulator, the insulator forms an air inlet channel along the axial direction of the cathode tube, and the part of the cathode tube which is not filled with the insulator forms a cavity;
the gas inlet passage communicates with the cavity to form the induced gas containing portion.
Preferably, one end of the cathode component, which is provided with the air inlet, is fixed on a chamber wall, and one end of the cathode component, which is provided with the air outlet, is suspended in the chamber body.
Preferably, the plasma auxiliary excitation device further comprises an anode part and an insulating connecting part which are positioned inside the chamber body, wherein the anode part is connected with the cathode part through the insulating connecting part, and the anode part is grounded.
Preferably, the reaction chamber further comprises a first gas inlet pipe and a second gas inlet pipe, the first gas inlet pipe is used for introducing the process gas into the chamber body, and the second gas inlet pipe is used for introducing the plasma-induced gas into the chamber body.
Preferably, the ratio of the dimension D of the cavity in the radial direction of the cathode tube to the dimension H of the cavity in the axial direction of the cathode tube ranges from 1.2 to 1.4.
The present invention also provides a plasma generating method, including the steps of:
s101, introducing plasma induction gas into the induction gas containing part through a gas inlet, and enabling the plasma induction gas to flow into the cavity body through a gas outlet after the plasma induction gas is started;
step S201, the upper electrode mechanism is turned on to glow the process gas in the chamber body.
Preferably, the step S101 specifically includes:
and turning on a power supply, and applying a voltage to the cathode component so as to enable the plasma induction gas in the induction gas accommodating part to glow.
Preferably, after the step S201, the method further includes:
step S2011, the flow rate of the plasma-induced gas introduced into the induced gas accommodating portion is reduced to a first preset flow rate.
Preferably, after the step S101 and before the step S201, the method further includes:
step S1011, introducing the process gas into the first gas inlet pipe, and introducing the plasma-induced gas into the second gas inlet pipe, so that the process gas and the plasma-induced gas enter the chamber plasma.
Preferably, the step 2011 further includes: and reducing the flow of the plasma-induced gas introduced into the second gas inlet pipe to a second preset flow.
The invention has the following beneficial effects:
the reaction chamber provided by the invention comprises a chamber body, an upper electrode mechanism and a plasma auxiliary excitation device, wherein the plasma auxiliary excitation device comprises an induced gas containing part, a gas inlet and a gas outlet, two ends of the induced gas containing part are respectively communicated with the gas inlet and the gas outlet, the gas outlet is also communicated with the chamber body, the plasma-induced gas is ignited in the induced gas accommodating part by the plasma auxiliary excitation device and then flows into the chamber body, compared with the prior art that the process gas in the cavity body is ignited by the auxiliary upper electrode mechanism with the help of the bias radio frequency source on the base, the process gas in the cavity body is ignited by the auxiliary upper electrode mechanism, so that the ignition difficulty of the process gas can be reduced, the substrate can be prevented from being bombarded by plasma, a film layer on the substrate is prevented from being damaged, and the process effect after the substrate is processed is improved.
The plasma generating method provided by the invention has the advantages that by means of the plasma auxiliary excitation device, the plasma induction gas is introduced into the induction gas accommodating part through the gas inlet, the plasma induction gas flows into the cavity body through the gas outlet after being ignited, and the upper electrode mechanism is started, so that the process gas in the cavity body is ignited.
Drawings
FIG. 1 is a schematic diagram of a reaction chamber according to the prior art;
FIG. 2 is a schematic structural view of a reaction chamber provided in the present invention;
FIG. 3 is a schematic structural diagram of a plasma-assisted excitation device provided in the present invention;
FIG. 4 is a flow chart of a first specific process of the plasma generation method provided by the invention;
FIG. 5 is a flow chart of a second specific process of the plasma generation method provided by the invention;
FIG. 6 is a block flow diagram illustrating a third embodiment of a plasma generation method according to the present invention;
FIG. 7 is a block flow diagram illustrating a fourth embodiment of a plasma generation method according to the present invention;
description of reference numerals:
11-an air inlet pipe; 12-a radio frequency source; 13-a base; 14-a radio frequency bias source; 15-a substrate; 2-a chamber body; 21-a first inlet pipe; 22-a second inlet pipe; 23-a mixing line; 31-a radio frequency source; 32-matcher; 33-a coil; 4-a plasma-assisted excitation device; 411-an intake passage; 412-a cavity; 42-air outlet; 431-cathode tube; 432-an insulator; 44-a power supply; 45-anode part; 46-an insulating connector; 47-an annular projection; 5-a base; 6-substrate.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the reaction chamber and the plasma generating method provided by the present invention will be described in detail below with reference to the accompanying drawings.
As shown in fig. 2-3, the present embodiment provides a reaction chamber, which includes a chamber body 2, an upper electrode mechanism and a plasma auxiliary excitation device 4, wherein the plasma auxiliary excitation device 4 includes an induced gas accommodating portion, a gas inlet and a gas outlet 42, two ends of the induced gas accommodating portion are respectively communicated with the gas inlet and the gas outlet 42, the gas outlet 42 is further communicated with the chamber body 2, and plasma induced gas can flow into the chamber body 2 after being ignited in the induced gas accommodating portion, so as to assist the upper electrode mechanism to ignite process gas in the chamber body 2.
According to the reaction chamber provided by the invention, the plasma induced gas is ignited in the induced gas accommodating part by the plasma auxiliary excitation device 4 and then flows into the chamber body 2, so that the auxiliary upper electrode mechanism is used for igniting the process gas in the chamber body 2, and compared with the existing method that the bias radio frequency source on the base 5 is used for assisting the upper electrode mechanism to ignite the process gas in the chamber body 2, the reaction chamber not only can reduce the ignition difficulty of the process gas, but also can prevent the plasma from bombarding the substrate 6, thereby avoiding damaging a film layer on the substrate 6 and improving the process effect after the substrate 6 is processed.
Specifically, the pure process gas has good insulation property, and is difficult to be broken down by the electric field generated by the upper electrode mechanism under high pressure to generate glow discharge, while the plasma-induced gas is a gas which is easier to be broken down to generate glow discharge than the process gas under high pressure, and the plasma-induced gas is ignited to generate induced plasma, and after being mixed with the process gas, the process gas is charged with free charged particles, so that the process gas becomes an electric conductor, and the process gas becomes easy to generate glow discharge under high pressure.
Optionally, the process gas comprises oxygen (O)2) Or a gas containing nitrogen or hydrogen, e.g. nitrogen (N)2) Hydrogen (H)2) Hydrogen trifluoride (NF)3) Or ammonia (NH)3)。
Alternatively, the plasma-inducing gas includes an inert gas having a low breakdown voltage, such as helium (He), argon (Ar), or xenon (Xe).
As shown in fig. 3, in the present embodiment, the plasma auxiliary excitation device 4 includes a cathode member and a power supply 44, the cathode member being electrically connected to a negative electrode of the power supply 44; one end of the cathode part is provided with an air inlet, and the other end is provided with an air outlet 42; the inside of the cathode member forms an induced gas accommodating portion.
Specifically, the plasma-induced gas enters the induced gas accommodating portion from the gas inlet of the cathode member, and a voltage is applied to the cathode member through the power supply 44, so that the plasma-induced gas in the induced gas accommodating portion is ignited, thereby generating an induced plasma, and the induced plasma flows into the chamber body 2 from the gas outlet 42 of the cathode member to be mixed with the process gas in the chamber body 2.
In practical applications, the power source 44 may be a dc power source 44, and since the voltage applied to the cathode component by the power source 44 is high and a large amount of induced plasma is generated in the induced gas accommodating portion when the plasma auxiliary excitation device 4 is in operation, which may cause the temperature of the cathode component to be high, the cathode component is usually made of a material with a high melting point, such as tungsten or tantalum.
In this embodiment, the cathode member is a cathode tube 431, the inside of the cathode tube 431 is filled with an insulator 432, the insulator 432 is formed with an air inlet passage 411 along the axial direction of the cathode tube 431, and the part of the cathode tube 431 not filled with the insulator 432 forms a cavity 412; the gas inlet passage 411 and the cavity 412 communicate to form an induction gas containing portion.
Specifically, the cathode tube 431 is hollow tube-shaped, one port of the cathode tube 431 is an air inlet of the cathode component, the other port of the cathode tube 431 is an air outlet 42 of the cathode component, the air inlet close to the cathode tube 431 is filled with an insulator 432, an air inlet channel 411 is formed in the insulator 432 along the axial direction of the cathode tube 431, the insulator 432 is not filled at the air outlet 42 close to the cathode tube 431, so that the part of the air outlet 42 close to the cathode tube 431 keeps the hollow tube shape thereof, thereby forming the cavity 412, the plasma-induced gas directly enters the air inlet channel 411 from the air inlet of the cathode tube 431, enters the cavity 412 through the air inlet channel 411 to form the induced plasma, and finally flows into the chamber body 2 from the air outlet 42, the design can be convenient for controlling the ignition of the plasma-induced gas to be centralized in the cavity 412, the premature ignition of the plasma-induced gas is avoided, and the induced plasma can uniformly and, the stability of the auxiliary upper electrode mechanism for igniting the process gas in the chamber body 2 is improved.
Optionally, the axis of the air inlet channel 411 coincides with the axis of the cathode tube 431, so that the plasma-induced gas can enter from the middle of the cavity 412, and the plasma-induced gas can be uniformly diffused in the cavity 412, so that the difficulty in starting the plasma-induced gas is reduced. However, the arrangement of the gas inlet passage 411 is not limited thereto as long as the plasma-induced gas can be ignited in the cavity 412.
Optionally, an independent gas inlet pipe may be disposed in the gas inlet channel 411, and the gas outlet end of the gas inlet pipe extends into one end of the gas inlet channel 411, which is close to the cavity 412, so that the plasma-induced gas enters the cavity 412 through the independent gas inlet pipe, thereby further improving the stability of the auxiliary upper electrode mechanism for starting the process gas of the chamber body 2.
In practical applications, annular protrusions 47 are circumferentially provided on the inner wall of the cathode tube 431 near the air outlet 42, the annular protrusions 47 can conduct electricity as with the cathode tube 431, and can ignite the plasma-induced gas, and the annular protrusions 47 can reduce the inner diameter of the air outlet 42 of the cathode tube 431, thereby reducing the ignition difficulty of the plasma-induced gas.
In this embodiment, the end of the cathode member having the gas inlet is fixed to the chamber wall, and the end of the cathode member having the gas outlet 42 is suspended in the chamber body 2. Specifically, a through hole penetrating through the wall thickness of the chamber is formed in the chamber wall, the cathode part can be inserted into the through hole, and one end of the gas outlet 42 extends into the chamber body 2 and is in a suspended state, so that the diffusion of the plasma in the chamber body 2 is favorably induced, and the effect of assisting the upper electrode mechanism to glow the process gas of the chamber body 2 is improved.
In the present embodiment, the plasma auxiliary excitation device 4 further includes an anode part 45 and an insulating connector 46 located inside the chamber body 2, wherein the anode part 45 is connected with the cathode part through the insulating connector 46, and the anode part 45 is grounded to form a stable loop in the cathode part.
In the present embodiment, anode member 45 is disposed opposite to outlet 42 of cathode tube 431.
Optionally, a distance between the anode member 45 and the gas outlet 42 of the cathode tube 431 in the axial direction of the cathode tube 431 ranges from 15mm to 20mm, which is beneficial to glow the plasma-induced gas in the cavity 412.
Specifically, the anode member 45 has a plate shape, one side surface of which is disposed opposite to the outlet 42 of the cathode tube 431, and the distance between the side surface and the end surface of the outlet 42 of the cathode tube 431 is in the range of 15mm to 20mm, that is, the length as shown by C in fig. 3. However, the arrangement of the anode member 45 is not limited to this, and it is only necessary that the anode member 45 is connected to the cathode tube 431 through the insulating connector 46 without contacting the cathode tube 431.
In practical applications, the insulating connector 46 and the anode part 45 may be separately disposed in the chamber body 2, or the anode part 45 and the insulating connector 46 may be omitted, and the grounding device of the reaction chamber may be directly used as the anode part 45, and the chamber wall may be used as the insulating connector 46, so as to form a stable circuit in the cathode part. In addition, the anode member 45 needs to be made of a metal material having good conductivity.
In this embodiment, the cathode component is disposed in the sidewall or the top wall of the chamber body 2, and is far away from the pedestal 5 disposed at the lower portion of the chamber body 2, so as to avoid the substrate 6 on the pedestal 5 from being damaged by the induced plasma, and to avoid the substrate 6 on the pedestal 5 from being damaged by the plasma generated by the process gas when the process gas in the chamber body 2 generates glow discharge by the induced plasma auxiliary upper electrode mechanism, thereby avoiding the film on the substrate 6 from being damaged, and improving the process effect of the substrate 6 after processing.
In this embodiment, the reaction chamber further includes a first gas inlet pipe 21 and a second gas inlet pipe 22, the first gas inlet pipe 21 is used for introducing the process gas into the chamber body 2, and the second gas inlet pipe 22 is used for introducing the plasma-induced gas into the chamber body 2.
Specifically, be provided with two through-holes that run through cavity body 2 roof thickness in cavity body 2's roof, first intake pipe 21 and second intake pipe 22 set up respectively in these two through-holes, let in process gas and plasma induced gas in cavity body 2 respectively through first intake pipe 21 and second intake pipe 22, make process gas and plasma induced gas mix in cavity body 2, because plasma induced gas is punctured more easily than process gas, with the help of the mixture of induced gas and process gas, the electric potential that can make process gas punctured is less than the electric potential that simple process gas was punctured, penning effect promptly, thereby further reduce process gas's the starting degree of difficulty.
In this embodiment, the reaction chamber further includes a mixing pipeline 23, the first gas inlet pipe 21 is communicated with the mixing pipeline 23 and is used for introducing the process gas into the mixing pipeline 23, and the second gas inlet pipe 22 is communicated with the mixing pipeline 23 and is used for introducing the plasma-induced gas into the mixing pipeline 23, and the mixed gas of the process gas and the plasma-induced gas is introduced into the reaction chamber through the mixing pipeline 23.
Specifically, a through hole penetrating through the thickness of the top wall is formed in the top wall of the reaction chamber, the gas outlet end of the mixing pipeline 23 is arranged in the through hole, gas is introduced into the chamber body 2 through the mixing pipeline 23, the process gas and the plasma-induced gas are introduced into the mixing pipeline 23 through the first gas inlet pipeline 21 and the second gas inlet pipeline 22 respectively, and the process gas and the plasma-induced gas are mixed in the mixing pipeline 23, so that the process gas and the plasma-induced gas can be mixed more sufficiently, and the starting difficulty of the process gas is further reduced.
In the present embodiment, the ratio of the dimension D of the cavity 412 in the radial direction of the cathode tube 431 to the dimension H of the cavity 412 in the axial direction of the cathode tube 431 is in the range of 1.2 to 1.4. Specifically, the dimension D of the cathode tube 431 in the radial direction is shown as a in fig. 3, the dimension H of the cathode tube 431 in the axial direction is shown as B in fig. 3, and the ratio of the dimension D of the cavity 412 in the radial direction of the cathode tube 431 to the dimension H of the cavity 412 in the axial direction of the cathode tube 431 is a/B, i.e., the ratio of a/B ranges from 1.2 to 1.4. However, the ratio of the dimension D of the cavity 412 in the radial direction of the cathode tube 431 to the dimension H of the cavity 412 in the axial direction of the cathode tube 431 is not limited thereto, but when the ratio of the dimension D of the cavity 412 in the radial direction of the cathode tube 431 to the dimension H of the cavity 412 in the axial direction of the cathode tube 431 is in the range of 1.2 to 1.4, the plasma-induced gas in the cavity 412 is easily ignited.
Preferably, the ratio of the dimension D of the cavity 412 in the radial direction of the cathode tube 431 to the dimension H of the cavity 412 in the axial direction of the cathode tube 431 is 4/3, i.e., a/B is 4/3, at which time the plasma-induced gas in the cavity 412 is more easily ignited.
Optionally, the dimension D of the cavity 412 in the radial direction of the cathode tube 431 is in the range of 5mm to 15mm, that is, the length indicated by a in fig. 3 is in the range of 5mm to 15mm, preferably 10mm, but the length indicated by a is not limited thereto, and only when a is in the range of 5mm to 15mm, the plasma-induced gas in the cavity 412 is easily ignited.
In practice, the plasma-assisted excitation device 4 further comprises an ultraviolet lamp (UV lamp) or an electron beam discharge system, both of which are capable of igniting the plasma-induced gas.
In the present embodiment, the upper electrode mechanism includes a radio frequency source 31, a matching unit 32, and a coil 33, wherein the coil 33 is disposed outside the chamber body 2, and the radio frequency source 31 is electrically connected to the coil 33 through the matching unit 32 for applying radio frequency power to the coil 33. Specifically, the rf source 31 feeds rf power to the coil 33 through the matching unit 32, so that the coil 33 generates an electromagnetic field, and the coil 33 couples the electromagnetic field into the reaction chamber to feed rf power into the chamber body 2, thereby igniting the process gas in the chamber body 2.
In practical applications, the matcher 32 may be an automatic matcher, but is not limited thereto. In addition, the frequency of the rf source 31 includes 400KHz, 2MHz, 40MHz, 60MHz, 80MHz, or 100MHz, but the frequency of the rf source 31 is not limited thereto, and other frequencies of the rf source 31 may be selected according to process requirements.
As shown in fig. 4 to 7, as another technical solution, this embodiment further provides a plasma generating method, where the plasma generating method includes the following steps:
s101, introducing plasma induction gas into the induction gas containing part through the gas inlet, and enabling the plasma induction gas to flow into the chamber body 2 through the gas outlet 42 after the plasma induction gas is started;
s201, the upper electrode mechanism is turned on to glow the process gas in the chamber body 2.
In the plasma generating method provided in this embodiment, with the aid of the plasma auxiliary excitation device 4, the plasma-induced gas is introduced into the induced gas accommodating portion through the gas inlet, and the plasma-induced gas flows into the chamber body 2 through the gas outlet 42 after being ignited, and the upper electrode mechanism is turned on, so as to ignite the process gas in the chamber body 2.
In this embodiment, step S101 specifically includes:
the power supply 44 is turned on to apply a voltage to the cathode member to ignite the plasma-induced gas in the induced gas container.
Specifically, the plasma-inducing gas is excited by a voltage applied to the cathode member from the power supply 44 after entering the inducing gas container, and a glow discharge is generated, whereby the plasma is generated by ignition.
In this embodiment, after step S201, the method further includes:
in step S301, the power supply 44 is turned off, and the application of voltage to the cathode member is stopped.
Specifically, after the plasma auxiliary excitation device 4 assists the upper electrode mechanism to glow the process gas in the chamber body 2, the process gas will have free charged particles, and as the free charged particles in the process gas gradually increase, the process gas can be stably ignited only by the upper electrode mechanism, and at this time, the power supply 44 can be turned off to prevent the plasma in the chamber body 2 from concentrating near the plasma auxiliary excitation device 4, and prevent the plasma in the chamber body 2 from being unevenly distributed, thereby improving the processing effect on the substrate 6.
In this embodiment, after step S201 and before step S301, the method further includes:
in step S2011, the flow rate of the plasma-induced gas introduced into the induced gas accommodating portion is reduced to a first preset flow rate. Therefore, the proportion of the induced plasma in the chamber body 2 is reduced, the proportion of the process gas and the plasma formed by the process gas in the chamber body 2 is improved, the radio frequency power fed into the chamber body 2 through the upper electrode device is enabled to act on the process gas more, the process gas can stably form the plasma, and the processing efficiency and the processing effect of the substrate 6 can be improved.
In this embodiment, after step S101 and before step S201, the method further includes:
in step S1011, a process gas is introduced into the first gas inlet pipe 21, and a plasma-induced gas is introduced into the second gas inlet pipe 22, so that the process gas and the plasma-induced gas enter the chamber body 2.
Specifically, the process gas and the induction gas are respectively introduced into the chamber body 2 from the first gas inlet pipe 21 and the second gas inlet pipe 22, so that the process gas and the plasma induction gas are mixed in the chamber body 2, and the plasma induction gas is easier to be broken down than the process gas, so that the broken-down potential of the process gas is lower than the broken-down potential of the pure process gas, namely the penning effect, by means of the mixing of the induction gas and the process gas, and the glow starting difficulty of the process gas is further reduced.
In this embodiment, step S2011 further includes: the flow rate of the plasma-induced gas introduced into the second gas inlet pipe 22 is reduced to a second preset flow rate. Thereby reducing the proportion of plasma-induced gas in the chamber body 2 and increasing the proportion of process gas, and thus enabling the efficiency of processing the substrate 6 and the processing effect to be improved.
In this embodiment, in step S101, the gas flow rate of the plasma-induced gas introduced into the induced gas accommodating portion through the gas inlet has a value range of 50sccm to 100sccm, which is beneficial to glow starting of the plasma-induced gas in the induced gas accommodating portion.
In this embodiment, in step S2011, the flow rate of the plasma-induced gas introduced into the induced gas accommodating portion is decreased to a first preset flow rate, and the flow rate of the plasma-induced gas introduced into the second gas inlet pipe 22 is decreased to a second preset flow rate, so that the ratio of the flow rate of the plasma-induced gas to the flow rate of the process gas is 1: 10, i.e. the ratio of plasma-induced gas to process gas in the chamber body 2 is controlled to be 1: 10 when the ratio of plasma-inducing gas to process gas in the chamber body 2 is 1: 10, the distribution uniformity of the plasma formed by the process gas in the chamber body 2 can be improved, and the stability of the process gas excited by the upper electrode device to form the plasma can also be improved, but the ratio of the plasma-induced gas to the process gas in the chamber body 2 is not limited thereto, and can be adjusted according to actual process requirements.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (12)
1. A reaction chamber comprises a chamber body and an upper electrode mechanism, and is characterized by also comprising a plasma auxiliary excitation device, wherein,
the plasma auxiliary excitation device comprises an induction gas accommodating part, a gas inlet and a gas outlet, wherein two ends of the induction gas accommodating part are respectively communicated with the gas inlet and the gas outlet, and the gas outlet is also communicated with the inside of the cavity body;
the plasma-induced gas can flow into the chamber body after being ignited in the induced gas accommodating part so as to assist the upper electrode mechanism in igniting the process gas in the chamber body.
2. The reaction chamber of claim 1, wherein the plasma-assisted excitation device comprises a cathode part and a power supply, the cathode part being electrically connected to a negative pole of the power supply;
one end of the cathode component is provided with the air inlet, and the other end of the cathode component is provided with the air outlet; the inside of the cathode member forms the induced gas containing portion.
3. The reaction chamber as claimed in claim 2, wherein the cathode member is a cathode tube, the inside of the cathode tube is filled with an insulator, the insulator is formed with a gas inlet passage in an axial direction of the cathode tube, and a portion of the inside of the cathode tube not filled with the insulator forms a cavity;
the gas inlet passage communicates with the cavity to form the induced gas containing portion.
4. The reaction chamber of claim 3, wherein the end of the cathode member provided with the gas inlet is fixed on the chamber wall, and the end of the cathode member provided with the gas outlet is suspended in the chamber body.
5. The reaction chamber as claimed in any one of claims 1 to 4, wherein the plasma auxiliary excitation device further comprises an anode part and an insulating connector inside the chamber body, wherein the anode part is connected with the cathode part through the insulating connector, and the anode part is grounded.
6. The reaction chamber of claim 5, further comprising a first gas inlet pipe and a second gas inlet pipe, wherein the first gas inlet pipe is used for introducing the process gas into the chamber body, and the second gas inlet pipe is used for introducing the plasma-induced gas into the chamber body.
7. The reaction chamber as claimed in claim 4, wherein the ratio of the dimension D of the cavity in the radial direction of the cathode tube to the dimension H of the cavity in the axial direction of the cathode tube is in the range of 1.2-1.4.
8. A plasma generating method, characterized by comprising the steps of:
s101, introducing plasma induction gas into the induction gas containing part through a gas inlet, and enabling the plasma induction gas to flow into the cavity body through a gas outlet after the plasma induction gas is started;
step S201, the upper electrode mechanism is turned on to glow the process gas in the chamber body.
9. A plasma generating method according to claim 8, wherein the step S101 is specifically:
and turning on a power supply, and applying a voltage to the cathode component so as to enable the plasma induction gas in the induction gas accommodating part to glow.
10. A plasma generating method according to claim 9, further comprising, after said step S201:
step S2011, the flow rate of the plasma-induced gas introduced into the induced gas accommodating portion is reduced to a first preset flow rate.
11. The plasma generating method according to claim 10, further comprising, after the step S101 and before the step S201:
step S1011, introducing the process gas into the first gas inlet pipe, and introducing the plasma-induced gas into the second gas inlet pipe, so that the process gas and the plasma-induced gas enter the chamber body.
12. A plasma generating method according to claim 11, wherein the step 2011 further includes: and reducing the flow of the plasma-induced gas introduced into the second gas inlet pipe to a second preset flow.
Priority Applications (1)
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