CN110739367A - Preparation method of N-type TOPCon solar cells - Google Patents
Preparation method of N-type TOPCon solar cells Download PDFInfo
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- CN110739367A CN110739367A CN201911013168.5A CN201911013168A CN110739367A CN 110739367 A CN110739367 A CN 110739367A CN 201911013168 A CN201911013168 A CN 201911013168A CN 110739367 A CN110739367 A CN 110739367A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 238000002161 passivation Methods 0.000 claims abstract description 38
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 34
- 238000009792 diffusion process Methods 0.000 claims abstract description 26
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims description 85
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 48
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 37
- 239000013078 crystal Substances 0.000 claims description 37
- 229910052710 silicon Inorganic materials 0.000 claims description 37
- 239000010703 silicon Substances 0.000 claims description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 36
- 239000000377 silicon dioxide Substances 0.000 claims description 22
- 230000005641 tunneling Effects 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 21
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 18
- 229910052796 boron Inorganic materials 0.000 claims description 18
- 229910004205 SiNX Inorganic materials 0.000 claims description 16
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 16
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 16
- 239000004332 silver Substances 0.000 claims description 16
- 229910052709 silver Inorganic materials 0.000 claims description 16
- 238000007747 plating Methods 0.000 claims description 15
- 238000004804 winding Methods 0.000 claims description 15
- 230000008021 deposition Effects 0.000 claims description 14
- 238000005245 sintering Methods 0.000 claims description 14
- 239000005388 borosilicate glass Substances 0.000 claims description 13
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 claims description 12
- 229910052681 coesite Inorganic materials 0.000 claims description 12
- 229910052906 cristobalite Inorganic materials 0.000 claims description 12
- 229910052682 stishovite Inorganic materials 0.000 claims description 12
- 229910052905 tridymite Inorganic materials 0.000 claims description 12
- 238000007254 oxidation reaction Methods 0.000 claims description 10
- 235000012239 silicon dioxide Nutrition 0.000 claims description 10
- 239000002131 composite material Substances 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 8
- 239000004408 titanium dioxide Substances 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052593 corundum Inorganic materials 0.000 claims description 6
- 238000002425 crystallisation Methods 0.000 claims description 6
- 230000008025 crystallization Effects 0.000 claims description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 6
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 6
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000000231 atomic layer deposition Methods 0.000 claims description 4
- 230000003213 activating effect Effects 0.000 abstract description 5
- 238000001465 metallisation Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 description 14
- 238000004140 cleaning Methods 0.000 description 9
- 125000004429 atom Chemical group 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 125000004437 phosphorous atom Chemical group 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
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- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
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- 238000005468 ion implantation Methods 0.000 description 1
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- 238000006467 substitution reaction Methods 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
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- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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Abstract
The invention relates to a method for preparing N-type TOPCon solar cells, which comprises the steps of firstly preparing a back surface ultrathin oxide layer and a heavily doped intrinsic amorphous silicon layer, then preparing a front surface p + doped layer through diffusion, simultaneously activating back surface doped atoms at high temperature to convert the amorphous silicon layer into a polycrystalline silicon layer, and finally preparing a passivation anti-reflection film, a passivation film and a metallization process to finish the preparation of the N-type TOPCon solar cell.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a preparation method of N-type TOPCon solar cells.
Background
With the continuous progress and depth of solar cells, high efficiency reduction becomes an important direction for the current industrialized development of solar cells, and the design of a high-efficiency structure and the improvement of the manufacturing yield are the key points for realizing the target.
A common N-type TOPCon solar cell, in which the front surface of the cell is p + type doped, and the back surface is an ultra-thin silicon oxide layer and an N + heavily doped polysilicon layer, is mainly prepared by the following steps: the method comprises the steps of texturing → diffusion → etching → a tunneling oxide layer and a polysilicon passivation layer → cleaning → annealing → a passivation anti-reflection film → metallization → sorting, wherein the preparation process inevitably enables Poly to be plated on the front surface in a winding way, a removing and plating procedure needs to be added, the manufacturing cost is improved, and the method is contradictory to the reduction of the manufacturing cost and the improvement of the yield.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a preparation method of N-type TOPCon solar cells.
The invention discloses local back surface field TOPCon solar cells, which have the technical scheme that the method comprises the following steps:
(1) selecting an N-type crystal silicon substrate, and roughly polishing the back surface of the N-type crystal silicon substrate;
(2) firstly growing layers of tunneling oxide layers on the back surface of the N-type crystal silicon substrate processed in the step (1), then depositing layers of intrinsic amorphous silicon layers containing microcrystalline phases on the tunneling oxide layers, then carrying out doping treatment, and growing layers of masks on the intrinsic amorphous silicon layers after deposition;
(3) performing texturing treatment on the front surface of the N-type crystal silicon substrate treated in the step (2), and removing the winding plating at the same time;
(4) performing boron diffusion treatment on the texturing surface of the N-type crystal silicon substrate processed in the step (3) to form a positive p + doped layer on the texturing surface of the N-type crystal silicon substrate and form a borosilicate glass layer on the positive p + doped layer; the doping atoms on the back surface of the N-type crystal silicon substrate are activated at high temperature, so that the microcrystalline silicon phase on the back surface of the N-type crystal silicon substrate is converted into a polycrystalline silicon phase to complete crystallization, and a polycrystalline silicon layer is formed;
(5) removing the mask layer on the back surface of the N-type crystalline silicon substrate and the borosilicate glass layer on the front surface after the treatment in the step (4);
(6) preparing a passivated antireflection film on the front surface of the N-type crystal silicon substrate treated in the step (5), and preparing a passivated film on the back surface of the N-type crystal silicon substrate;
(7) printing a back main gate and a back auxiliary gate on the back surface of the N-type crystal silicon substrate processed in the step (6) by using silver paste, drying, printing a front main gate and a front auxiliary gate on the front surface by using aluminum-doped silver paste, and drying;
(8) and (4) sintering the N-type crystal silicon substrate treated in the step (7).
The preparation method of N-type TOPCon solar cells provided by the invention also comprises the following auxiliary technical scheme:
wherein, in the step (1), the resistivity of the N-type crystal silicon substrate is 1-5 omega cm, and the thickness is 80-200 μm.
In the step (2), intrinsic amorphous silicon layers containing microcrystalline phases are deposited in a low-pressure chemical vapor deposition device, wherein the deposition temperature of the intrinsic amorphous silicon layers is 550-650 ℃, and the thickness of the intrinsic amorphous silicon layers is 50-400 nm.
In the step (2), the thickness of the tunneling oxide layer is 0.5-2 nm, and the tunneling oxide layer is made of silicon dioxide or titanium dioxide; wherein the preparation method of the silicon dioxide comprises thermal oxidation and HNO3Oxidation, O3And the preparation method of the titanium dioxide is an atomic layer deposition method.
In the step (3), the thickness of the tunneling oxide layer is 0.5-2.5 nm; the intrinsic amorphous silicon layer has a deposition temperature of 550-650 ℃ and a thickness of 50-400 nm.
In the step (3), boron tribromide is adopted as the boron source, the diffusion temperature is 900-1100 ℃, and the diffusion time is 60-240 minutes. The square resistance value after boron diffusion is 80-130 omega/sqr.
Wherein, in the step (6), the front passivation anti-reflection film of the N-type crystalline silicon substrate is SiO2、SiNXOr Al2O3 or any combination thereof in the dielectric film, wherein the back passivation film of the N-type crystal silicon substrate is SiNXOr SiO2And SiNXA composite dielectric film composed of the dielectric films.
The thickness of the front passivation anti-reflection film is 70-110 nm, and the thickness of the back passivation film is not less than 20 nm.
In the step (7), the line widths of the back side sub-gates are 40-100um and are arranged in parallel, and the line widths of the front side sub-gates are 40-100um and are arranged in parallel; the back main grid and the back auxiliary grid are printed by silver paste, and the front main grid and the front auxiliary grid are printed by aluminum-doped silver paste.
The implementation of the invention comprises the following technical effects:
in addition, the invention utilizes the texturing and Poly-winding plating removal process method to reduce the winding plating removal process, and simultaneously, the process method reduces the difference of the surface structures of the winding plating area and the non-winding plating area, thereby being beneficial to improving the yield and reducing the production cost.
Drawings
Fig. 1 is a schematic cross-sectional view of a cell structure after a second step of the preparation method of N-type TOPCon solar cells according to the embodiment of the invention.
Fig. 2 is a schematic cross-sectional view of the cell structure after the third step of the preparation method of the N-type TOPCon solar cells in the embodiment of the invention.
Fig. 3 is a schematic cross-sectional view of the cell structure after the fourth step of the method for manufacturing N-type TOPCon solar cells according to the embodiment of the invention.
Fig. 4 is a schematic cross-sectional view of the cell structure after the fifth step of the method for manufacturing N-type TOPCon solar cells according to the embodiment of the invention.
Fig. 5 is a schematic cross-sectional view of the cell structure after the sixth step of the method for manufacturing N-type TOPCon solar cells according to the embodiment of the invention.
Fig. 6 is a schematic cross-sectional view of the cell structure after the seventh step of the method for manufacturing N-type TOPCon solar cells according to the embodiment of the invention.
In the figure, 10-N type crystal silicon substrate, 11-tunneling oxide layer, 12-intrinsic amorphous silicon layer, 13-p + doped layer, 14-passivation antireflection film, 15-passivation film, 16-mask, 17-borosilicate glass layer, 18-front side sub-gate and 19-back side sub-gate.
Detailed Description
The present invention will be described in detail with reference to examples.
The present invention is not limited to the above-described embodiments, and those skilled in the art can make modifications to the embodiments without any inventive contribution as required after reading the present specification, but only protected within the scope of the appended claims.
The preparation method of the N-type TOPCon solar cells comprises the following steps:
(1) selecting an N-type crystalline silicon substrate 10, and roughly polishing the back surface of the N-type crystalline silicon substrate 10 by using an etching cleaning machine; wherein the resistivity of the N-type crystal silicon substrate 10 is 1-5 omega cm; the thickness of the N-type crystal silicon substrate 10 is 80 to 200 μm.
(2) Firstly, layers of ultrathin tunneling oxide layers 11 are grown on the back surfaces of the N-type crystalline silicon substrates 10 processed in the step (1), and then layers of intrinsic amorphous silicon layers 12 containing microcrystalline phases are deposited in low-pressure chemical vapor deposition equipment, wherein the tunneling oxide layers are made of silicon dioxide or titanium dioxide, and the preparation method of the silicon dioxide is thermal oxidation and HNO3Oxidation, O3Oxidizing or depositing an atomic layer, and the like, wherein the preparation method of the titanium dioxide is the atomic layer deposition method, the thickness of the tunneling oxide layer is 0.5-2 nm, the deposition temperature of the intrinsic amorphous silicon layer is 550-650 ℃, the thickness of the intrinsic amorphous silicon layer is 50-400 nm, then the intrinsic amorphous silicon layer 12 is doped, the doping method is that phosphorus atoms are implanted, phosphorosilicate glass is deposited in a normal-pressure chemical vapor deposition mode, layers of masks 16 grow on the intrinsic amorphous silicon layer after deposition, and the masks can be selected from SiNx，SiON，SiO2And the structure of the battery after the completion of this step is shown in fig. 1.
(3) And (3) performing texturing treatment on the front surface of the N-type crystalline silicon substrate 10 treated in the step (2), and simultaneously removing the winding plating, wherein the cell structure after the step is completed is shown in FIG. 2.
(4) And (3) placing the N-type crystal silicon substrate 10 processed in the step (3) into an industrial diffusion furnace to perform boron diffusion on the texturing surface to form a front p + doped layer 13 and a borosilicate glass layer 17, activating doped atoms on the back surface at a high temperature to completely convert microcrystalline silicon phases into polycrystalline silicon phases, and completing crystallization to form a polycrystalline silicon layer 12, wherein a boron tribromide is adopted as a boron source, the diffusion temperature is 900-1100 ℃, and the time is 60-240 minutes. The square resistance value after boron diffusion is 80-130 omega/sqr. The cell structure after this step is completed is shown in fig. 3.
(5) And (5) removing the back mask 16 and the borosilicate glass layer 17 on the front side of the N-type crystalline silicon substrate 10 treated in the step (4) by using a cleaning machine. The cell structure after this step is completed is shown in fig. 4.
(6) Arranging a passivation anti-reflection film 14 on the front surface of the N-type crystalline silicon substrate 10 treated in the step (5), and arranging a passivation film 15 on the back surface of the N-type crystalline silicon substrate 10, wherein the passivation anti-reflection film 14 on the front surface is SiO2、SiNxAnd Al2O3 kinds or more in the dielectric film, and the passivation film 15 of the back surface is SiO2And SiNxA composite dielectric film composed of the dielectric films. The thickness of the front surface passivation anti-reflection film 14 is 70-110 nm; the thickness of the back surface passivation film 14 is not less than 20 nm. The cell structure after this step is completed is shown in fig. 5.
(7) And printing a back main grid and a back auxiliary grid on the back surface of the N-type crystalline silicon substrate 10 by using silver paste, and drying, wherein the line width of the back auxiliary grid 19 is 40-100um and the back auxiliary grid is parallel to each other. And printing a front main grid and a front auxiliary grid on the front surface of the N-type crystalline silicon substrate 10 by using aluminum-doped silver paste, wherein the line width of the front auxiliary grid 18 is 40-100um and the front auxiliary grid is parallel to each other. The cell structure after this step is completed is shown in fig. 6.
(8) And (4) conveying the N-type crystalline silicon substrate 10 processed in the step (7) into a belt type sintering furnace for sintering, wherein the sintering peak temperature is 700-900 ℃, and thus the manufacturing of the N-type TOPCon solar cell is completed.
The method for producing an N-type TOPCon solar cell of the present invention will be described in detail with reference to specific examples.
Example 1
(1) Selecting an N-type crystalline silicon substrate 10, and roughly polishing the back surface of the N-type crystalline silicon substrate 10 by using an etching cleaning machine; wherein the resistivity of the N-type crystal silicon substrate 10 is 1. omega. cm; the thickness of the N-type crystalline silicon substrate 10 was 80 μm.
(2) Firstly, layers of ultrathin tunneling oxide layers 11 are grown on the back surfaces of the N-type crystalline silicon substrates 10 processed in the step (1), and then layers of microcrystalline-containing layers are deposited in a low-pressure chemical vapor deposition deviceAn intrinsic amorphous silicon layer 12 of phase. Wherein, the tunneling oxide layer is made of silicon dioxide, and the preparation method of the silicon dioxide comprises thermal oxidation and HNO3Oxidation, O3Oxidizing or depositing in atomic layer, etc. the tunneling oxide layer has a thickness of 0.5nm, the intrinsic amorphous silicon layer has a deposition temperature of 550 deg.C and an intrinsic amorphous silicon layer has a thickness of 50nm, doping the intrinsic amorphous silicon layer 12 by ion implantation of phosphorus atoms, and growing layers of masks 16 on the intrinsic amorphous silicon layer after deposition, wherein the masks are selected from SiNxThe structure of the battery after this step is completed is shown in fig. 1.
(3) And (3) performing texturing treatment on the front surface of the N-type crystalline silicon substrate 10 treated in the step (2), and simultaneously removing the winding plating, wherein the cell structure after the step is completed is shown in FIG. 2.
(4) And (3) placing the N-type crystal silicon substrate 10 processed in the step (3) into an industrial diffusion furnace to perform boron diffusion on the texturing surface to form a front p + doped layer 13 and a borosilicate glass layer 17, activating doped atoms on the back surface at a high temperature to convert all microcrystalline silicon phases into polycrystalline silicon phases, completing crystallization to form a polycrystalline silicon layer 12, wherein a boron tribromide is adopted as a boron source, the diffusion temperature is 900 ℃, and the time is 60 minutes. The square resistance after boron diffusion was 80 Ω/sqr. The cell structure after this step is completed is shown in fig. 3.
(5) And (5) removing the back mask 16 and the borosilicate glass layer 17 on the front side of the N-type crystalline silicon substrate 10 treated in the step (4) by using a cleaning machine. The cell structure after this step is completed is shown in fig. 4.
(6) Arranging a passivation anti-reflection film 14 on the front surface of the N-type crystalline silicon substrate 10 treated in the step (5), and arranging a passivation film 15 on the back surface of the N-type crystalline silicon substrate 10, wherein the passivation anti-reflection film 14 on the front surface is SiO2With Al2O3Composite film of dielectric film, passivation film 15 of back surface being SiO2And SiNxA composite dielectric film composed of the dielectric films. The thickness of the front surface passivation anti-reflection film 14 is 70 nm; the thickness of the back surface passivation film 14 is not less than 20 nm. The cell structure after this step is completed is shown in fig. 5.
(7) And printing a back main grid and a back auxiliary grid on the back surface of the N-type crystalline silicon substrate 10 by using silver paste and drying, wherein the line width of the back auxiliary grid is 19 microns, and the back auxiliary grid are parallel to each other. And printing a front main grid and a front auxiliary grid on the front surface of the N-type crystalline silicon substrate 10 by using aluminum-doped silver paste, wherein the line width of the front auxiliary grid 18 is 40 mu m, and the front auxiliary grid are parallel to each other. The cell structure after this step is completed is shown in fig. 6.
(8) And (4) conveying the N-type crystalline silicon substrate 10 processed in the step (7) into a belt type sintering furnace for sintering, wherein the sintering peak temperature is 700 ℃, and thus the manufacturing of the N-type TOPCon solar cell is completed.
Example 2
(1) Selecting an N-type crystalline silicon substrate 10, and roughly polishing the back surface of the N-type crystalline silicon substrate 10 by using an etching cleaning machine; wherein the resistivity of the N-type crystal silicon substrate 10 is 5. omega. cm; the thickness of the N-type crystalline silicon substrate 10 was 200. mu.m.
(2) Firstly growing ultrathin tunneling oxide layers 11 on the back surface of an N-type crystalline silicon substrate 10 treated in the step (1), then depositing intrinsic amorphous silicon layers 12 containing microcrystalline phases in low-pressure chemical vapor deposition equipment, wherein the tunneling oxide layers are made of titanium dioxide, the preparation method of the titanium dioxide is an atomic layer deposition method, the thickness of the tunneling oxide layers is 2nm, the deposition temperature of the intrinsic amorphous silicon layers is 650 ℃, the thickness of the intrinsic amorphous silicon layers is 400nm, then doping treatment is carried out on the intrinsic amorphous silicon layers 12, the doping method is that phosphorus atoms are implanted in an ion mode, phosphorosilicate glass is deposited in a normal-pressure chemical vapor deposition mode, and after deposition, masks 16 are grown on the intrinsic amorphous silicon layers, wherein the masks can be selected from SiON and/or SiO2And the structure of the battery after the completion of this step is shown in fig. 1.
(3) And (3) performing texturing treatment on the front surface of the N-type crystalline silicon substrate 10 treated in the step (2), and simultaneously removing the winding plating, wherein the cell structure after the step is completed is shown in FIG. 2.
(4) And (3) placing the N-type crystal silicon substrate 10 processed in the step (3) into an industrial diffusion furnace to perform boron diffusion on the texturing surface to form a front p + doped layer 13 and a borosilicate glass layer 17, simultaneously activating doped atoms on the back surface at a high temperature to convert all microcrystalline silicon phases into polycrystalline silicon phases, completing crystallization to form a polycrystalline silicon layer 12, wherein a boron source adopts boron tribromide, the diffusion temperature is 1100 ℃, and the time is 240 minutes. The square resistance value after boron diffusion is 130 omega/sqr. The cell structure after this step is completed is shown in fig. 3.
(5) And (5) removing the back mask 16 and the borosilicate glass layer 17 on the front side of the N-type crystalline silicon substrate 10 treated in the step (4) by using a cleaning machine. The cell structure after this step is completed is shown in fig. 4.
(6) Arranging a passivation anti-reflection film 14 on the front surface of the N-type crystalline silicon substrate 10 treated in the step (5), and arranging a passivation film 15 on the back surface of the N-type crystalline silicon substrate 10, wherein the passivation anti-reflection film 14 on the front surface is SiNxAnd Al2O3 kinds or two kinds of dielectric films, and the passivation film 15 on the back surface is SiO2And SiNxA composite dielectric film composed of the dielectric films. The thickness of the front surface passivation anti-reflection film 14 is 100 nm; the thickness of the back surface passivation film 14 is not less than 15 nm. The cell structure after this step is completed is shown in fig. 5.
(7) And printing a back main grid and a back auxiliary grid on the back surface of the N-type crystalline silicon substrate 10 by using silver paste and drying, wherein the line width of the back auxiliary grid is 19 microns and the back auxiliary grid is parallel to each other. And printing a front main grid and a front auxiliary grid on the front surface of the N-type crystalline silicon substrate 10 by using aluminum-doped silver paste, wherein the line width of the front auxiliary grid is 18 um, and the front auxiliary grid are parallel to each other. The cell structure after this step is completed is shown in fig. 6.
(8) And (4) conveying the N-type crystalline silicon substrate 10 processed in the step (7) into a belt type sintering furnace for sintering, wherein the sintering peak temperature is 900 ℃, and thus the manufacturing of the N-type TOPCon solar cell is completed.
Example 3
(1) Selecting an N-type crystalline silicon substrate 10, and roughly polishing the back surface of the N-type crystalline silicon substrate 10 by using an etching cleaning machine; wherein the resistivity of the N-type crystal silicon substrate 10 is 3. omega. cm; the thickness of the N-type crystalline silicon substrate 10 was 150. mu.m.
(2) Firstly, layers of ultrathin tunneling oxide layers 11 are grown on the back surfaces of the N-type crystalline silicon substrates 10 processed in the step (1), and then layers of intrinsic amorphous silicon layers 12 containing microcrystalline phases are deposited in a low-pressure chemical vapor deposition device, wherein the tunneling oxide layers are preparedThe material is silicon dioxide, and the preparation method of the silicon dioxide comprises thermal oxidation and HNO3Oxidation, O3Oxidizing or depositing an atomic layer, wherein the thickness of the tunneling oxide layer is 1.3nm, the deposition temperature of the intrinsic amorphous silicon layer is 600 ℃, the thickness of the intrinsic amorphous silicon layer is 200nm, then doping the intrinsic amorphous silicon layer 12 in a mode of implanting phosphorus atoms by ions, depositing phosphorosilicate glass by normal-pressure chemical vapor deposition, and growing layers of masks 16 on the intrinsic amorphous silicon layer after deposition, wherein the mask is selected from SiNxThe structure of the battery after this step is completed is shown in fig. 1.
(3) And (3) performing texturing treatment on the front surface of the N-type crystalline silicon substrate 10 treated in the step (2), and simultaneously removing the winding plating, wherein the cell structure after the step is completed is shown in FIG. 2.
(4) And (3) placing the N-type crystal silicon substrate 10 processed in the step (3) into an industrial diffusion furnace to perform boron diffusion on the texturing surface to form a front p + doped layer 13 and a borosilicate glass layer 17, simultaneously activating doped atoms on the back surface at a high temperature to convert all microcrystalline silicon phases into polycrystalline silicon phases, and completing crystallization to form a polycrystalline silicon layer 12, wherein a boron source adopts boron tribromide, the diffusion temperature is 1000 ℃, and the time is 200 minutes. The sheet resistance value after boron diffusion is 100 omega/sqr. The cell structure after this step is completed is shown in fig. 3.
(5) And (5) removing the back mask 16 and the borosilicate glass layer 17 on the front side of the N-type crystalline silicon substrate 10 treated in the step (4) by using a cleaning machine. The cell structure after this step is completed is shown in fig. 4.
(6) Arranging a passivation anti-reflection film 14 on the front surface of the N-type crystalline silicon substrate 10 treated in the step (5), and arranging a passivation film 15 on the back surface of the N-type crystalline silicon substrate 10, wherein the passivation anti-reflection film 14 on the front surface is SiNxWith Al2O3Composite film of dielectric film, passivation film 15 of back surface being SiO2And SiNxA composite dielectric film composed of the dielectric films. The thickness of the front surface passivation anti-reflection film 14 is 80 nm; the thickness of the back surface passivation film 14 is not less than 20 nm. The cell structure after this step is completed is shown in fig. 5.
(7) And printing a back main grid and a back auxiliary grid on the back surface of the N-type crystalline silicon substrate 10 by using silver paste and drying, wherein the line width of the back auxiliary grid is 19 microns, and the back auxiliary grid are parallel to each other. And printing a front main grid and a front auxiliary grid on the front surface of the N-type crystalline silicon substrate 10 by using aluminum-doped silver paste, wherein the line width of the front auxiliary grid is 70 mu m, and the front auxiliary grid are parallel to each other. The cell structure after this step is completed is shown in fig. 6.
(8) And (4) conveying the N-type crystalline silicon substrate 10 processed in the step (7) into a belt type sintering furnace for sintering, wherein the sintering peak temperature is 800 ℃, and thus the manufacturing of the N-type TOPCon solar cell is completed.
In addition, the invention utilizes the texturing and Poly-winding plating removal process method to reduce the winding plating removal process, and simultaneously, the process method reduces the difference of the surface structures of the winding plating area and the non-winding plating area, thereby being beneficial to improving the yield and reducing the production cost.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the protection scope of the present invention, although the present invention is described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions can be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention.
Claims (9)
- The preparation method of the N-type TOPCon solar cells is characterized by comprising the following steps:(1) selecting an N-type crystal silicon substrate, and roughly polishing the back surface of the N-type crystal silicon substrate;(2) firstly growing layers of tunneling oxide layers on the back surface of the N-type crystal silicon substrate processed in the step (1), then depositing layers of intrinsic amorphous silicon layers containing microcrystalline phases on the tunneling oxide layers, then carrying out doping treatment, and growing layers of masks on the intrinsic amorphous silicon layers after deposition;(3) performing texturing treatment on the front surface of the N-type crystal silicon substrate treated in the step (2), and removing the winding plating at the same time;(4) performing boron diffusion treatment on the texturing surface of the N-type crystal silicon substrate processed in the step (3) to form a positive p + doped layer on the texturing surface of the N-type crystal silicon substrate and form a borosilicate glass layer on the positive p + doped layer; the doping atoms on the back surface of the N-type crystal silicon substrate are activated at high temperature, so that the microcrystalline silicon phase on the back surface of the N-type crystal silicon substrate is converted into a polycrystalline silicon phase to complete crystallization, and a polycrystalline silicon layer is formed;(5) removing the mask layer on the back surface of the N-type crystalline silicon substrate and the borosilicate glass layer on the front surface after the treatment in the step (4);(6) preparing a passivated antireflection film on the front surface of the N-type crystal silicon substrate treated in the step (5), and preparing a passivated film on the back surface of the N-type crystal silicon substrate;(7) printing a back main gate and a back auxiliary gate on the back surface of the N-type crystal silicon substrate processed in the step (6) by using silver paste, drying, printing a front main gate and a front auxiliary gate on the front surface by using aluminum-doped silver paste, and drying;(8) and (4) sintering the N-type crystal silicon substrate treated in the step (7).
- 2. The method for preparing kinds of N-type TOPCon solar cells according to claim 1, wherein, in step (1), the resistivity of the N-type crystalline silicon substrate is 1-5 Ω -cm and the thickness is 80-200 μm.
- 3. The method for preparing kinds of N-type TOPCon solar cells according to claim 1, wherein in step (2), layers of intrinsic amorphous silicon layer containing microcrystalline phase are deposited in a low pressure chemical vapor deposition apparatus, wherein the deposition temperature of the intrinsic amorphous silicon layer is 550-650 ℃, and the thickness of the intrinsic amorphous silicon layer is 50-400 nm.
- 4. The method for preparing N-type TOPCon solar cells of any of the claims 1-3 and , wherein in the step (2), the tunneling oxide layer has a thickness of 0.5-2 nm and is made of silicon dioxide or titanium dioxide, wherein the silicon dioxide is prepared by thermal oxidation and HNO3Oxidation, O3And the preparation method of the titanium dioxide is an atomic layer deposition method.
- 5. The method for preparing kinds of N-type TOPCon solar cells according to claim 4, wherein in step (3), the tunneling oxide layer has a thickness of 0.5-2.5 nm, the intrinsic amorphous silicon layer has a deposition temperature of 550-650 ℃ and a thickness of 50-400 nm.
- 6. The method for preparing N-type TOPCon solar cells according to claims 1-3 and 5 or , wherein in step (3), boron tribromide is used as the boron source, the diffusion temperature is 900-1100 ℃, the diffusion time is 60-240 minutes, and the square resistance value after boron diffusion is 80-130 Ω/sqr.
- 7. The method of claim N-type TOPCon solar cells as claimed in any of claims 1-3 and 5 to , wherein in step (6), the front passivation anti-reflection film of the N-type crystalline silicon substrate is SiO2、SiNXOr Al2O3 or any combination thereof in the dielectric film, wherein the back passivation film of the N-type crystal silicon substrate is SiNXOr SiO2And SiNXA composite dielectric film composed of the dielectric films.
- 8. The method for preparing kinds of N-type TOPCon solar cells according to claim 7, wherein the front passivation anti-reflection film has a thickness of 70-110 nm, and the back passivation film has a thickness of not less than 20 nm.
- 9. The method for preparing N-type TOPCon solar cells of any of claims 1-3, 5 and 8 to , wherein in step (7), the back side sub-gates have a line width of 40-100um and are arranged in parallel with each other, and the front side sub-gates have a line width of 40-100um and are arranged in parallel with each other, wherein the back side main gate and the back side sub-gates are both printed by silver paste, and the front side main gate and the front side sub-gates are both printed by aluminum-doped silver paste.
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