CN114267753A - TOPCon solar cell, preparation method thereof and photovoltaic module - Google Patents
TOPCon solar cell, preparation method thereof and photovoltaic module Download PDFInfo
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Abstract
The application discloses a preparation method of a TOPCon solar cell, which comprises the steps of forming a silicon oxide layer on the back surface of a silicon wafer; forming a first doped amorphous silicon layer on the surface of the silicon oxide layer deviating from the silicon wafer in an in-situ doping mode; forming an intrinsic amorphous silicon layer on the surface of the first doped amorphous silicon layer, which is far away from the silicon oxide layer; doping the intrinsic amorphous silicon layer to form a second doped amorphous silicon layer; and simultaneously crystallizing the first doped amorphous silicon layer and the second doped amorphous silicon layer to correspondingly form a first doped polycrystalline silicon layer and a second doped polycrystalline silicon layer to obtain the TOPCon solar cell. The method divides the doped polycrystalline silicon layer into a first doped polycrystalline silicon layer and a second doped polycrystalline silicon layer, the first doped polycrystalline silicon layer is formed in an in-situ doping mode, the second doped polycrystalline silicon layer is formed in an ex-situ doping mode, the ex-situ doping mode can shorten the preparation time, and the using amount of gas required in the preparation process can be reduced.
Description
Technical Field
The application relates to the field of solar cells, in particular to a TOPCon solar cell, a preparation method thereof and a photovoltaic module.
Background
The TOPCon (Tunnel Oxide Passivated Contact) solar cell is a cell based on the selective carrier principle technology, a Passivated Contact structure in the cell comprises two parts, namely a silicon Oxide layer and a doped polycrystalline silicon layer, the Passivated Contact structure can effectively reduce surface recombination and metal Contact recombination, the passivation effect is improved, and the open-circuit voltage of the cell is improved. In the process of fabricating the TOPCon cell, when a doped polysilicon layer is to be fabricated, amorphous silicon is in-situ doped by LPCVD (Low Pressure Chemical Vapor Deposition), and then is crystallized by high temperature annealing. Although the in-situ doping mode is easy to control the doping concentration, the deposition speed is slow, and high-temperature annealing is needed to activate impurities after deposition, so that the preparation process time of the battery is long, and the productivity of the battery is low.
Therefore, how to solve the above technical problems should be a great concern to those skilled in the art.
Disclosure of Invention
The application aims to provide a TOPCon solar cell, a preparation method thereof and a photovoltaic module, so as to shorten the preparation time of the TOPCon solar cell and reduce the manufacturing cost.
In order to solve the above technical problem, the present application provides a method for preparing a TOPCon solar cell, including:
forming a silicon oxide layer on the back of the silicon wafer;
forming a first doped amorphous silicon layer on the surface of the silicon oxide layer deviating from the silicon wafer in an in-situ doping mode;
forming an intrinsic amorphous silicon layer on the surface of the first doped amorphous silicon layer, which is far away from the silicon oxide layer;
doping the intrinsic amorphous silicon layer to form a second doped amorphous silicon layer;
and simultaneously crystallizing the first doped amorphous silicon layer and the second doped amorphous silicon layer to correspondingly form a first doped polycrystalline silicon layer and a second doped polycrystalline silicon layer to obtain the TOPCon solar cell.
Optionally, the doping the intrinsic amorphous silicon layer to form a second doped amorphous silicon layer includes:
and doping the intrinsic amorphous silicon layer in a diffusion mode to form the second doped amorphous silicon layer.
Optionally, the doping the intrinsic amorphous silicon layer to form a second doped amorphous silicon layer includes:
and doping the intrinsic amorphous silicon layer by adopting an ion implantation mode to form the second doped amorphous silicon layer.
Optionally, the forming an amorphous silicon layer on the surface of the first doped amorphous silicon layer facing away from the silicon oxide layer includes:
and forming the amorphous silicon layer by adopting any one of a low-pressure chemical vapor deposition method, a plasma enhanced chemical vapor deposition method and a sputtering method.
Optionally, the forming a silicon oxide layer on the back surface of the silicon wafer includes:
polishing the back surface of the silicon wafer;
and forming the silicon oxide layer on the polished back surface.
Optionally, before forming the silicon oxide layer on the back side of the silicon wafer, the method further includes:
and texturing the silicon wafer.
The application also provides a TOPCon solar cell which is prepared by adopting any one of the TOPCon solar cell preparation methods.
Optionally, the thickness of the first doped polysilicon layer is between 5nm and 40nm, and the thickness of the second doped polysilicon layer is between 20nm and 200nm, including all end points.
The application also provides a photovoltaic module, which comprises any one of the TOPCon solar cells.
The application provides a TOPCon solar cell preparation method, which comprises the following steps: forming a silicon oxide layer on the back of the silicon wafer; forming a first doped amorphous silicon layer on the surface of the silicon oxide layer deviating from the silicon wafer in an in-situ doping mode; forming an intrinsic amorphous silicon layer on the surface of the first doped amorphous silicon layer, which is far away from the silicon oxide layer; doping the intrinsic amorphous silicon layer to form a second doped amorphous silicon layer; and simultaneously crystallizing the first doped amorphous silicon layer and the second doped amorphous silicon layer to correspondingly form a first doped polycrystalline silicon layer and a second doped polycrystalline silicon layer to obtain the TOPCon solar cell.
Therefore, when the TOPCon solar cell is prepared, and the doped polycrystalline silicon layer of the passivation contact structure is prepared, the doped polycrystalline silicon layer is divided into a first doped polycrystalline silicon layer and a second doped polycrystalline silicon layer, the first doped amorphous silicon layer is prepared on the back surface of the silicon wafer in an in-situ doping mode, the second doped amorphous silicon layer is formed in an ex-situ doping mode, and the first doped amorphous silicon layer and the second doped amorphous silicon layer are crystallized simultaneously to form the first doped polycrystalline silicon layer and the second doped polycrystalline silicon layer, the in-situ doping mode can easily control the doping concentration, the ex-situ doping mode can shorten the preparation time of the doped polycrystalline silicon layer, further shorten the preparation time of the TOPCon solar cell, and improve the preparation efficiency; the preparation time of the doped polycrystalline silicon layer is shortened, the consumption of gas required in the preparation process is reduced, and the preparation cost of the TOPCon solar cell is reduced.
In addition, the TOPCon solar cell and the photovoltaic module with the advantages are further provided.
Drawings
For a clearer explanation of the embodiments or technical solutions of the prior art of the present application, the drawings needed for the description of the embodiments or prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a flowchart of a method for fabricating a topocon solar cell according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of a TOPCon solar cell according to an embodiment of the present disclosure.
Detailed Description
In order that those skilled in the art will better understand the disclosure, the following detailed description will be given with reference to the accompanying drawings. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described and will be readily apparent to those of ordinary skill in the art without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.
As described in the background section, currently, when a doped polysilicon layer is prepared, amorphous silicon is generally subjected to in-situ doping and then high-temperature annealing to crystallize the amorphous silicon. Although the in-situ doping mode is easy to control the doping concentration, the deposition speed is slow, and high-temperature annealing is needed to activate impurities after deposition, so that the preparation process time of the battery is long, and the productivity of the battery is low.
In view of the above, the present application provides a method for fabricating a TOPCon solar cell, please refer to fig. 1, which includes:
step S101: and forming a silicon oxide layer on the back of the silicon wafer.
Before the silicon oxide layer is formed, a PN junction is formed by diffusion on the front surface of the silicon wafer. The front surface of the silicon wafer is the surface facing the sun, and the back surface is opposite to the front surface.
The silicon wafer is generally an N-type silicon wafer, and the front diffusion of the silicon wafer can be used for boron diffusion.
Step S102: and forming a first doped amorphous silicon layer on the surface of the silicon oxide layer departing from the silicon wafer in an in-situ doping mode.
And when the first doped amorphous silicon layer is formed by in-situ doping, introducing mixed gas of silane and a doping source into the evacuated furnace tube to prepare the first doped amorphous silicon layer.
Preferably, the first doped amorphous silicon layer is prepared by LPCVD method, which can prevent the silicon oxide layer from being adversely affected by Plasma, compared to PECVD (Plasma Enhanced Chemical Vapor Deposition) method.
Step S103: and forming an intrinsic amorphous silicon layer on the surface of the first doped amorphous silicon layer, which is far away from the silicon oxide layer.
In the step, only silane is introduced into the furnace tube which is vacuumized to prepare the intrinsic amorphous silicon layer.
The manner of preparing the amorphous silicon layer is not limited in the present application, as the case may be. For example, the amorphous silicon layer may be formed by any one of, but not limited to, low pressure chemical vapor deposition, plasma enhanced chemical vapor deposition, and sputtering.
Step S104: and doping the amorphous silicon layer to form a second doped amorphous silicon layer.
Optionally, as a specific implementation manner, when the intrinsic amorphous silicon layer is doped to form a second doped amorphous silicon layer, the intrinsic amorphous silicon layer is doped in a diffusion manner to form the second doped amorphous silicon layer; however, the present application is not limited to this, and as another embodiment, the intrinsic amorphous silicon layer may be doped by ion implantation to form the second doped amorphous silicon layer. The specific operation processes of diffusion doping and ion implantation doping can refer to the related art, and are not described in detail herein.
When the diffusion mode is adopted, the temperature is raised, then nitrogen with a doping source is introduced into the furnace tube for heat preservation, and the doping elements are pushed into the amorphous silicon layer.
In this step, a high temperature diffusion mode may be adopted, which not only can advance the doping source, but also can perform the crystallization process of step S105, thereby further saving time. The temperature for doping and crystallizing the amorphous silicon layer may be 850 ℃.
Step S105: and simultaneously crystallizing the first doped amorphous silicon layer and the second doped amorphous silicon layer to correspondingly form a first doped polycrystalline silicon layer and a second doped polycrystalline silicon layer to obtain the TOPCon solar cell.
The crystallization process adopts a high temperature form to process the first doped amorphous silicon layer and the second doped amorphous silicon layer.
The thickness of the first doped polycrystalline silicon layer is between 5nm and 40nm, and the first doped polycrystalline silicon layer is obtained by crystallizing the first doped amorphous silicon layer, namely the thickness of the first doped amorphous silicon layer is between 5nm and 40 nm. The thickness of the second doped polycrystalline silicon layer is between 20nm and 200nm, and the second doped polycrystalline silicon layer is obtained by crystallizing the second doped amorphous silicon layer, namely the thickness of the second doped amorphous silicon layer or the amorphous silicon layer is between 20nm and 200 nm.
In the application, the first doped amorphous silicon layer with proper thickness is deposited, the amorphous silicon layer is grown again, and the amorphous silicon layer is doped by diffusion to form the second doped amorphous silicon layer, so that the first doped amorphous silicon layer and the second doped amorphous silicon layer are crystallized simultaneously.
Because the doped amorphous silicon layer with the same thickness is grown, the speed of the in-situ doped amorphous silicon layer is 6-8 times that of the amorphous silicon layer directly deposited, the deposition time is saved by more than 2-5 times by the method, and meanwhile, the special gas and the energy consumption are saved by 2-5 times.
It should be noted that, after the crystallization process, the following steps are also required: removing the curvature layer on the surface of the silicon wafer, and cleaning BSG (borosilicate glass) and PSG (phosphosilicate glass) formed by doping; depositing a passivation layer and a first antireflection layer on the front surface of the silicon wafer in sequence, and depositing a second antireflection layer on the surface of the second doped polycrystalline silicon layer, which is away from the first doped polycrystalline silicon layer; and printing grid line electrodes on the front side and the back side of the silicon wafer, and sintering to form a front side electrode and a back side electrode, thereby finally obtaining the TOPCon solar cell. Wherein the passivation layer of the front surface may be aluminum oxide (Al)2O3) The layer, the first anti-reflective layer and the second anti-reflective layer may be silicon nitride (Si)xNy) And (3) a layer.
Through the LPCVD method, a first doped polycrystalline silicon layer is firstly prepared in an in-situ doping mode, then an intrinsic amorphous silicon layer is prepared, a second doped polycrystalline silicon layer is formed by doping the intrinsic amorphous silicon layer, and finally the crystallization treatment is carried out simultaneously.
In the application, when the TOPCon solar cell is prepared, and a doped polycrystalline silicon layer of a passivation contact structure is prepared, the doped polycrystalline silicon layer is divided into a first doped polycrystalline silicon layer and a second doped polycrystalline silicon layer, a first doped amorphous silicon layer is prepared on the back surface of a silicon wafer in an in-situ doping mode, then the second doped amorphous silicon layer is formed in an ex-situ doping mode, and the first doped amorphous silicon layer and the second doped amorphous silicon layer are subjected to crystallization treatment at the same time to form the first doped polycrystalline silicon layer and the second doped polycrystalline silicon layer, the in-situ doping mode can easily control the doping concentration, the ex-situ doping mode can shorten the preparation time of the doped polycrystalline silicon layer, further shorten the preparation time of the TOPCon solar cell, and improve the preparation efficiency; the preparation time of the doped polycrystalline silicon layer is shortened, the consumption of gas required in the preparation process is reduced, and the preparation cost of the TOPCon solar cell is reduced.
In one embodiment of the present application, the forming a silicon oxide layer on the back side of the silicon wafer includes:
polishing the back surface of the silicon wafer;
and forming the silicon oxide layer on the polished back surface.
The damage on the back surface of the silicon wafer can be removed by polishing the back surface, and the efficiency of the TOPCon solar cell is improved.
On the basis of any one of the above embodiments, in an embodiment of the present application, before forming the silicon oxide layer on the back surface of the silicon wafer, the method further includes:
and texturing the silicon wafer to enhance the light trapping effect and improve the efficiency of the TOPCon solar cell.
The alkali texturing mode can be adopted during texturing.
The preparation method of the TOPCon solar cell in the present application is described in detail below by taking the preparation method of the first doped amorphous silicon layer by in-situ doping as an example.
Example 1
1. Selecting an N-type silicon wafer with the resistivity of 0.4-3 omega/cm, performing alkali texturing on the silicon wafer, and diffusing boron on the front side to form a PN junction.
2. Polishing the back of the silicon wafer by using acid liquor or alkali liquor, then putting the silicon wafer into low-pressure chemical vapor deposition equipment, introducing oxygen to form a 1.5nm silicon oxide layer on the polished back, then vacuumizing the silicon oxide layer, introducing silane and phosphine mixed gas to form a 10nm first doped amorphous silicon layer, and then vacuumizing the silicon oxide layer and introducing silane to form a 100nm amorphous silicon layer.
3. And putting the silicon wafer into a furnace tube, heating to 850 ℃, introducing 2000sccm of small nitrogen carrying phosphorus oxychloride for 20min, stopping introducing the source, keeping the temperature at 850 ℃, continuing for 30min, crystallizing the first doped amorphous silicon layer and the amorphous silicon layer, activating impurity phosphorus, and pushing part of phosphorus into the amorphous silicon layer to form a first doped polycrystalline silicon layer and a second doped polycrystalline silicon layer.
4. And removing the surrounding coating on the surface of the silicon wafer, and cleaning away the BSG and the PSG.
5. Depositing Al on the front surface of the silicon wafer2O3And SixNyDepositing Si on the backxNyAnd finally forming the TOPCon solar cell by printing a grid line electrode and sintering.
Example 2
1. Selecting an N-type silicon wafer with the resistivity of 0.4-3 omega/cm, performing alkali texturing on the silicon wafer, and diffusing boron on the front side to form a PN junction.
2. Polishing the back of the silicon wafer by using acid liquor or alkali liquor, then putting the silicon wafer into low-pressure chemical vapor deposition equipment, introducing oxygen to form a 1.5nm silicon oxide layer on the polished back, then vacuumizing the silicon oxide layer, introducing silane and phosphine mixed gas to form a first doped amorphous silicon layer with the thickness of 30nm, and then vacuumizing the silicon oxide layer and introducing silane to form an amorphous silicon layer with the thickness of 80 nm.
3. And putting the silicon wafer into a furnace tube, heating to 850 ℃, introducing 2000sccm of small nitrogen carrying phosphorus oxychloride for 15min, stopping introducing the source, keeping the temperature at 850 ℃, continuing for 30min, crystallizing the first doped amorphous silicon layer and the amorphous silicon layer, activating impurity phosphorus, and pushing part of phosphorus into the amorphous silicon layer to form a first doped polycrystalline silicon layer and a second doped polycrystalline silicon layer.
4. And removing the surrounding coating on the surface of the silicon wafer, and cleaning away the BSG and the PSG.
5. Depositing Al on the front surface of the silicon wafer2O3And SixNyDepositing Si on the backxNyAnd finally forming the TOPCon solar cell by printing a grid line electrode and sintering.
The application also provides a TOPCon solar cell which is manufactured by adopting the TOPCon solar cell manufacturing method in any embodiment. Referring to fig. 2, a schematic diagram of a TOPCon solar cell includes: the solar cell comprises a front electrode 1, a first antireflection layer 2, a passivation layer 3, a doping layer 4, a silicon wafer 5, a silicon oxide layer 6, a first doped polycrystalline silicon layer 7, a second doped polycrystalline silicon layer 8, a second antireflection layer 9 and a back electrode 10.
The thickness of the silicon oxide layer 6 may be between 1nm and 3nm, inclusive.
The thickness of the first doped polysilicon layer is between 5nm and 40nm, and the thickness of the second doped polysilicon layer is between 20nm and 200nm, including all end points.
In the preparation of the passivation contact structure in the TOPCon solar cell in the embodiment, the doped polycrystalline silicon layer is divided into a first doped polycrystalline silicon layer and a second doped polycrystalline silicon layer, the first doped amorphous silicon layer and the second doped amorphous silicon layer are prepared on the back surface of the silicon wafer, any one of the first doped amorphous silicon layer and the second doped amorphous silicon layer is formed in an in-situ doping mode, the other layer is formed in an ex-situ doping mode, the in-situ doping mode can easily control the doping concentration, the ex-situ doping mode can shorten the preparation time of the doped polycrystalline silicon layer, further shorten the preparation time of the TOPCon solar cell, and improve the preparation efficiency; the preparation time of the doped polycrystalline silicon layer is shortened, the consumption of gas required in the preparation process is reduced, and the preparation cost of the TOPCon solar cell is reduced.
The application also provides a photovoltaic module, which comprises the TOPCon solar cell in the embodiment.
The embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same or similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The TOPCon solar cell, the preparation method thereof and the photovoltaic module provided by the present application are described in detail above. The principles and embodiments of the present application are explained herein using specific examples, which are provided only to help understand the method and the core idea of the present application. It should be noted that, for those skilled in the art, it is possible to make several improvements and modifications to the present application without departing from the principle of the present application, and such improvements and modifications also fall within the scope of the claims of the present application.
Claims (9)
1. A preparation method of a TOPCon solar cell is characterized by comprising the following steps:
forming a silicon oxide layer on the back of the silicon wafer;
forming a first doped amorphous silicon layer on the surface of the silicon oxide layer deviating from the silicon wafer in an in-situ doping mode;
forming an intrinsic amorphous silicon layer on the surface of the first doped amorphous silicon layer, which is far away from the silicon oxide layer;
doping the intrinsic amorphous silicon layer to form a second doped amorphous silicon layer;
and simultaneously crystallizing the first doped amorphous silicon layer and the second doped amorphous silicon layer to correspondingly form a first doped polycrystalline silicon layer and a second doped polycrystalline silicon layer to obtain the TOPCon solar cell.
2. The method of claim 1, wherein doping the intrinsic amorphous silicon layer to form a second doped amorphous silicon layer comprises:
and doping the intrinsic amorphous silicon layer in a diffusion mode to form the second doped amorphous silicon layer.
3. The method of claim 1, wherein doping the intrinsic amorphous silicon layer to form a second doped amorphous silicon layer comprises:
and doping the intrinsic amorphous silicon layer by adopting an ion implantation mode to form the second doped amorphous silicon layer.
4. The method of claim 1, wherein forming an amorphous silicon layer on a surface of the first doped amorphous silicon layer facing away from the silicon oxide layer comprises:
and forming the amorphous silicon layer by adopting any one of a low-pressure chemical vapor deposition method, a plasma enhanced chemical vapor deposition method and a sputtering method.
5. The method of fabricating a TOPCon solar cell of claim 1, wherein forming a silicon oxide layer on the back side of the silicon wafer comprises:
polishing the back surface of the silicon wafer;
and forming the silicon oxide layer on the polished back surface.
6. The method of fabricating a TOPCon solar cell according to any of claims 1 to 5, further comprising, prior to forming a silicon oxide layer on the back side of the silicon wafer:
and texturing the silicon wafer.
7. A TOPCon solar cell, characterized in that the TOPCon solar cell is manufactured by the TOPCon solar cell manufacturing method as claimed in any one of claims 1 to 6.
8. A TOPCon solar cell according to claim 7, wherein the first doped polysilicon layer has a thickness between 5nm and 40nm and the second doped polysilicon layer has a thickness between 20nm and 200nm, inclusive.
9. A photovoltaic module comprising a topocon solar cell according to claim 7 or 8.
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Application publication date: 20220401 |