CN110299462A - Organic electroluminescence device and Organnic electroluminescent device - Google Patents
Organic electroluminescence device and Organnic electroluminescent device Download PDFInfo
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- CN110299462A CN110299462A CN201910564083.XA CN201910564083A CN110299462A CN 110299462 A CN110299462 A CN 110299462A CN 201910564083 A CN201910564083 A CN 201910564083A CN 110299462 A CN110299462 A CN 110299462A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
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- Electroluminescent Light Sources (AREA)
Abstract
This announcement provides a kind of organic electroluminescence device and Organnic electroluminescent device, organic electroluminescence device includes light emitting device layer, dielectric layer and coupling layer, dielectric layer is arranged on light emitting device layer, coupling layer is arranged on the dielectric layer, wherein, light emitting device layer further includes first electrode layer, identical as the adjacent refractive index of two film layers up and down of first electrode layer, and the structure of coupling layer is periodic micro-structure.By the film layer and periodic microstructure design of two layers of identical refractive index, the plasma resonance mode light in the film layer of metal two sides is all coupled out, in the case where not destroying film layer, the electric leakage of device is avoided, improves light extraction efficiency.
Description
Technical field
This announcement is related to field of display technology more particularly to a kind of organic electroluminescence device and organic electroluminescent dress
It sets.
Background technique
Organic elctroluminescent device (Organic Light-Emitting Device, OLED) possesses self-luminous, low
The advantages that power consumption, fast, frivolous reaction, it has also become the emerging technology of display field.
In traditional OLED structure, since the refractive index of each film layer has differences, exciton after luminescent layer recombination luminescence,
80% light can be absorbed, in this absorbed light, the resonance of 40% light loss from surface plasma
(Suffer-plasmon polariton, SPP), absorption and total reflection of the remaining light from device and be lost, final energy
The light emitted only has 20%, and therefore, luminous efficiency is very low.In order to reduce the loss of light, in prior art, by matching not
Same refractive index changes the methods of structure of light scattering, and introducing lenticule, still, in these methods, generallys use and receive
The sub-wavelength structure of metrical scale comes the interface of modified metal and organic material so that the luminous wave vector of metal surface plasma body with
The luminous wave vector of luminous organic material is mutually matched, and coupling luminous, in this SPP mode, inhibits means very complicated.And
It is easy to destroy each organic film, causes display device internal electrical losses stream, influence the normal use of display device.
In conclusion existing OLED display device, when being designed, the loss of light wave is larger, meanwhile, when different
Light wave is sweared when being mutually matched coupling luminous, the problem of being easily destroyed each organic film and cause leakage current.
Summary of the invention
This announcement provides a kind of organic electroluminescence device and Organnic electroluminescent device, to solve existing organic electroluminescence
In luminescent device, the loss of light wave is excessive, and in organic electroluminescence device design, is easily destroyed each organic film, shows
The problem of showing device inside leakage current.
In order to solve the above technical problems, the technical solution that this announcement embodiment provides is as follows:
According to this announcement embodiment in a first aspect, providing a kind of organic electroluminescence device, comprising:
Light emitting device layer；
Dielectric layer, the dielectric layer are arranged on the light emitting device layer；And
Coupling layer, the coupling layer setting is on the dielectric layer；
Wherein, the light emitting device layer includes first electrode layer, the bilevel folding adjacent with the first electrode layer
Penetrate that rate is identical, the structure of the coupling layer is periodic micro-structure.
According to one embodiment of this announcement, the first electrode layer is transparent electrode layer, the material packet of the first electrode layer
Include metal or alloy.
According to one embodiment of this announcement, the first electrode layer with a thickness of 20 nanometers~50 nanometers.
According to one embodiment of this announcement, the light emitting device layer further include:
The second electrode lay, the second electrode lay are non-transparent electrode layer；
Hole transmission layer, the hole transmission layer are arranged on the second electrode lay；
Luminescent layer, the luminescent layer setting is on the hole transport layer；
Hole blocking layer, the hole blocking layer setting is on the light-emitting layer；
Electron transfer layer, the electron transfer layer are arranged on the hole blocking layer；And
Electron injecting layer, on the electron transport layer, the first electrode layer setting exists for the electron injecting layer setting
On the electron injecting layer；
Wherein, the refractive index of the electron injecting layer is identical as the refractive index of the dielectric layer, the first electrode layer with
The electric polarity of the second electrode lay is different.
According to one embodiment of this announcement, the light emitting device layer further includes electronic barrier layer, the electronic barrier layer setting
Between the hole transmission layer and the luminescent layer.
According to one embodiment of this announcement, the material of the electronic barrier layer includes laser barrier material.
According to one embodiment of this announcement, the light emitting device layer further includes hole injection layer, the hole injection layer setting
Between the hole transmission layer and the second electrode lay.
According to one embodiment of this announcement, the material of the luminescent layer includes host-guest system material.
According to one embodiment of this announcement, the upper surface of the coupling layer includes bulge-structure, and the bulge-structure is in the period
Property setting.
According to the second aspect of this announcement, a kind of Organnic electroluminescent device, the organic electroluminescent dress are additionally provided
The organic electroluminescence device provided including this announcement embodiment is provided.
In conclusion this announcement embodiment has the beneficial effect that
This announcement provides a kind of organic electroluminescence device and Organnic electroluminescent device, design cycle property Microraster structure
And dielectric layer, and guarantee the identical design knot of the refractive index of two film layers adjacent with the metal layer of organic electroluminescence device
Structure to improve the light extraction efficiency of display device, and reduces the leakage current situation of organic electroluminescence device, improves the effect of OLED
Rate.
Detailed description of the invention
It, below will be to embodiment or the prior art in order to illustrate more clearly of embodiment or technical solution in the prior art
Attached drawing needed in description is briefly described, it should be apparent that, the accompanying drawings in the following description is only some of announcement
Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these
Figure obtains other attached drawings.
Fig. 1 is each film layer schematic diagram of organic electroluminescence device that this announcement embodiment provides；
Fig. 2 is each film layer structure schematic diagram of another organic electroluminescence device of this announcement embodiment；
Fig. 3 is each film layer structure schematic diagram of another organic electroluminescence device that this announcement embodiment provides；
Fig. 4 is the Organnic electroluminescent device structural schematic diagram that this announcement embodiment provides.
Specific embodiment
Below in conjunction with the attached drawing in this announcement embodiment, the technical solution in this announcement embodiment is carried out clear, complete
Site preparation description.Obviously, described embodiment is only this announcement a part of the embodiment, instead of all the embodiments.It is based on
Embodiment in this announcement, those skilled in the art's every other implementation obtained without creative efforts
Example belongs to the range of this announcement protection.
In this revealed embodiment, as shown in FIG. 1, FIG. 1 is each films of the organic electroluminescence device of this announcement embodiment
Schematic diagram of a layer structure.It include light emitting device layer 10, dielectric layer 11 and coupling layer 12 in the organic electroluminescence device.It is described
Dielectric layer 11 is arranged on light emitting device layer 10, and coupling layer 12 is arranged on dielectric layer 11.Light emitting device layer 10 also has other
Film layer, wherein the top film layer of light emitting device layer 10 is first electrode layer, and the bottom of light emitting device layer 10 is the second electrode lay,
In this announcement embodiment, dielectric layer 11 is arranged in first electrode layer, the refraction of adjacent another film layer with first electrode layer
Rate is identical as the refractive index of dielectric layer 11, in this way, the refractive index of two film layers of metal electrode layer two sides is identical, sends out from luminescent layer
Light out can penetrate the identical film layer of above-mentioned refractive index, and the SPP plane wave vector in metallic diaphragm two sides be it is the same, into
When row coupling, the waveguide mode and substrate mode of luminescent device can inhibit, and then improve light emission rate.
Meanwhile the structure of coupling layer 12 is a periodic grating microstructure, specifically, can be in the upper surface of coupling layer 12
In multiple protrusions are periodically arranged.These have convexed to form grating microstructure, when light penetrates coupling layer 12, coupling layer 12
The SPP mode light of metal layer two sides is all coupled out again by this micro-structure, and then regulates and controls metal surface plasma
The luminous wave vector of body.By adjusting the micro-structure of coupling layer 12, so that the wavelength of the light wave of coupling outgoing is exactly in Organic Electricity
Near the glow peak of sub- luminescent device, to improve the luminous efficiency of OLED device, the micro-structure of coupling layer 12 can also be the period
The sunk structure of property.
Specifically, as shown in Fig. 2, Fig. 2 is that each film layer of another organic electroluminescence device that this announcement embodiment provides is shown
It is intended to.Organic electroluminescence device include the second electrode lay 200, the hole transmission layer being arranged on the second electrode lay 200 201,
The luminescent layer 202 that is arranged on hole transmission layer 201, is arranged in hole the hole blocking layer 203 being arranged on luminescent layer 202
Electron transfer layer 204 on barrier layer 203, the electron injecting layer 205 being arranged on electron transfer layer 204 and first electrode
Layer 206, first electrode layer 206 are arranged on electron injecting layer 205, while further including Jie being arranged in first electrode layer 206
Electric layer 207 and the coupling layer 208 being arranged on dielectric layer 207.
Wherein, the polarity of 200 liang of electrodes of first electrode layer 206 and the second electrode lay is on the contrary, first electrode layer 206 is transparent
Electrode layer, such light-transmissive first electrode layer 206, material are metal material or alloy material.First electrode layer 206
Thickness be not more than 50 nanometers, preferably with a thickness of 20 nanometers~50 nanometers, to guarantee that light can preferably penetrate electrode layer.The
Two electrode layers 200 are nontransparent electrode layer, generally anode layer, the material of the second electrode lay 200 be high work content metal or
Metal oxide or other metal materials.
In this announcement embodiment, the refractive index of electron injecting layer 205 is identical with the refractive index of dielectric layer 207.By luminescent layer
202 light issued, and the light penetrated by electron injecting layer 205, the SPP plane wave vector of above-mentioned two light be it is the same,
When being coupled, it can effectively inhibit the waveguide mode and substrate mode of luminescent device, and then improve the transmitance of light.
The upper surface of coupling layer 208 has periodic micro-structure, when light penetrates coupling layer 208, this micro- knot
Structure further extracts the light of SPP mode, and then improves the luminous efficiency of OLED.
As shown in figure 3, Fig. 3 is each film layer structure signal of another organic electroluminescence device that this announcement embodiment provides
Figure.The organic electroluminescence device film layer include the second electrode lay 300 set gradually from bottom to top, hole injection layer 301,
Hole transmission layer 302, electronic barrier layer 303, luminescent layer 304, hole blocking layer 305, electron transfer layer 306, electron injecting layer
307, first electrode layer 308, dielectric layer 309 and coupling layer 310.Wherein, the second electrode lay 300 can be nontransparent anode
Layer, the material of hole injection layer 301 and hole transmission layer 302 are organic small molecule material, and electronic barrier layer 303 includes but unlimited
In the organic small molecule materials such as electron-blocking materials and laser barrier material, luminescent layer 304 can be Subjective and Objective dopant material.
In above-mentioned film layer, hole injection layer 301 and electronic barrier layer 303 can be according to the specific knots of organic electroluminescence device
Structure and cast out, the setting of other film layers, which is not done, to be changed, the organic electroluminescence device that this announcement embodiment provides do not destroying it is each
In the case where film layer, the leakage current situation of device is avoided, and improves the transmitance of light.
Specifically, the electron injecting layer 307 of about 308 two sides of first electrode layer is identical with the refractive index of dielectric layer 309, coupling
The upper surface for closing layer 310 has periodical Microraster structure.
Above-mentioned organic electroluminescence device can be top emitting device or bottom emitting device.
Meanwhile this announcement embodiment also provides a kind of Organnic electroluminescent device, as shown in figure 4, Fig. 4 is this announcement implementation
The Organnic electroluminescent device schematic diagram that example provides.It include what this announcement embodiment provided in Organnic electroluminescent device 400
Organic luminescent device 401.The light extraction efficiency of the Organnic electroluminescent device 400 is high.
A kind of organic electroluminescence device provided by this announcement embodiment and Organnic electroluminescent device are carried out above
It is discussed in detail, the technical solution and its core concept of this announcement that the above embodiments are only used to help understand；Ability
The those of ordinary skill in domain it is understood that it is still possible to modify the technical solutions described in the foregoing embodiments, and
These are modified or replaceed, and it does not separate the essence of the corresponding technical solution, and this discloses the range of the technical solution of each embodiment.
Claims (10)
1. a kind of organic electroluminescence device characterized by comprising
Light emitting device layer；
Dielectric layer, the dielectric layer are arranged on the light emitting device layer；And
Coupling layer, the coupling layer setting is on the dielectric layer；
Wherein, the light emitting device layer includes first electrode layer, the folding of up and down two film layer adjacent with the first electrode layer
Penetrate that rate is identical, the structure of the coupling layer is periodic micro-structure.
2. organic electroluminescence device according to claim 1, which is characterized in that the first electrode layer is transparent electrode
Layer, the material of the first electrode layer includes metal or alloy.
3. organic electroluminescence device according to claim 1, which is characterized in that the first electrode layer with a thickness of 20
Nanometer~50 nanometers.
4. organic electroluminescence device according to claim 1, which is characterized in that the light emitting device layer further include:
The second electrode lay, the second electrode lay are non-transparent electrode layer；
Hole transmission layer, the hole transmission layer are arranged on the second electrode lay；
Luminescent layer, the luminescent layer setting is on the hole transport layer；
Hole blocking layer, the hole blocking layer setting is on the light-emitting layer；
Electron transfer layer, the electron transfer layer are arranged on the hole blocking layer；And
Electron injecting layer, on the electron transport layer, the first electrode layer is arranged described for the electron injecting layer setting
On electron injecting layer；
Wherein, the refractive index of the electron injecting layer is identical as the refractive index of the dielectric layer, the first electrode layer with it is described
The electric polarity of the second electrode lay is different.
5. organic electroluminescence device according to claim 4, which is characterized in that the light emitting device layer further includes electronics
Barrier layer, the electronic barrier layer are arranged between the hole transmission layer and the luminescent layer.
6. organic electroluminescence device according to claim 5, which is characterized in that the material of the electronic barrier layer includes
Laser barrier material.
7. organic electroluminescence device according to claim 4, which is characterized in that the light emitting device layer further includes hole
Implanted layer, the hole injection layer are arranged between the hole transmission layer and the second electrode lay.
8. organic electroluminescence device according to claim 4, which is characterized in that the material of the luminescent layer includes host and guest
Body dopant material.
9. organic electroluminescence device according to claim 1, which is characterized in that the upper surface of the coupling layer includes convex
Structure is played, the bulge-structure is in periodically setting.
10. a kind of Organnic electroluminescent device, which is characterized in that including such as described in any item organic electroluminescences of claim 1-9
Luminescent device.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910564083.XA CN110299462A (en) | 2019-06-25 | 2019-06-25 | Organic electroluminescence device and Organnic electroluminescent device |
| PCT/CN2019/096112 WO2020258403A1 (en) | 2019-06-25 | 2019-07-16 | Organic electroluminescent device and organic electroluminescent apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910564083.XA CN110299462A (en) | 2019-06-25 | 2019-06-25 | Organic electroluminescence device and Organnic electroluminescent device |
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| CN110299462A true CN110299462A (en) | 2019-10-01 |
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| CN201910564083.XA Pending CN110299462A (en) | 2019-06-25 | 2019-06-25 | Organic electroluminescence device and Organnic electroluminescent device |
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| WO (1) | WO2020258403A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113555515A (en) * | 2021-07-16 | 2021-10-26 | 京东方科技集团股份有限公司 | Light emitting device and display panel |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1468385A (en) * | 2000-07-21 | 2004-01-14 | �Ƹ��� | Surface plasmon polariton band gap structures |
| CN103490020A (en) * | 2013-09-30 | 2014-01-01 | 京东方科技集团股份有限公司 | Organic electroluminescence device, manufacturing method thereof, display device and illuminating device |
| CN204130537U (en) * | 2014-10-23 | 2015-01-28 | 京东方科技集团股份有限公司 | A kind of OLED panel and display unit |
| CN107305908A (en) * | 2016-04-20 | 2017-10-31 | 三星显示有限公司 | Organic Light Emitting Diode and organic electroluminescence display panel |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120314189A1 (en) * | 2010-03-10 | 2012-12-13 | Nec Corporation | Light emitting element, light source device, and projection display device |
| US9170351B2 (en) * | 2011-06-17 | 2015-10-27 | Nec Corporation | Optical element, light source apparatus, and projection-type display apparatus |
| CN103715372B (en) * | 2013-12-26 | 2017-08-25 | 京东方科技集团股份有限公司 | OLED display panel and preparation method thereof |
-
2019
- 2019-06-25 CN CN201910564083.XA patent/CN110299462A/en active Pending
- 2019-07-16 WO PCT/CN2019/096112 patent/WO2020258403A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1468385A (en) * | 2000-07-21 | 2004-01-14 | �Ƹ��� | Surface plasmon polariton band gap structures |
| CN103490020A (en) * | 2013-09-30 | 2014-01-01 | 京东方科技集团股份有限公司 | Organic electroluminescence device, manufacturing method thereof, display device and illuminating device |
| CN204130537U (en) * | 2014-10-23 | 2015-01-28 | 京东方科技集团股份有限公司 | A kind of OLED panel and display unit |
| CN107305908A (en) * | 2016-04-20 | 2017-10-31 | 三星显示有限公司 | Organic Light Emitting Diode and organic electroluminescence display panel |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113555515A (en) * | 2021-07-16 | 2021-10-26 | 京东方科技集团股份有限公司 | Light emitting device and display panel |
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| WO2020258403A1 (en) | 2020-12-30 |
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Application publication date: 20191001 |