CN110274889A - Multi-channel terahertz spectrographic detection unit based on surface plasma body resonant vibration antenna - Google Patents
Multi-channel terahertz spectrographic detection unit based on surface plasma body resonant vibration antenna Download PDFInfo
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- 238000012545 processing Methods 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
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- 238000007689 inspection Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
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- OUXCBPLFCPMLQZ-WOPPDYDQSA-N 4-amino-1-[(2r,3s,4s,5r)-4-hydroxy-5-(hydroxymethyl)-3-methyloxolan-2-yl]-5-iodopyrimidin-2-one Chemical compound C[C@H]1[C@H](O)[C@@H](CO)O[C@H]1N1C(=O)N=C(N)C(I)=C1 OUXCBPLFCPMLQZ-WOPPDYDQSA-N 0.000 description 1
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- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
- G01N21/3586—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation by Terahertz time domain spectroscopy [THz-TDS]
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Abstract
The invention discloses a kind of multi-channel terahertz spectrographic detection unit based on surface plasma body resonant vibration antenna.The probe unit includes surface plasma body resonant vibration antenna and transistor;Surface plasma body resonant vibration antenna is made of two symmetrically arranged antenna elements, and antenna element includes the bar portion of semicircular head and rectangle, and bar portion and head are connected semicircular the center point is vertical;Transistor is arranged between the bar portion of two antenna elements and perpendicular to the plane where antenna element;The grid and resoant antenna of transistor are located at same metal layer.The multi-channel terahertz spectrographic detection chip being made of above-mentioned probe unit, it is not only able to achieve and multi-wavelength terahertz signal is detected, the single-frequency light splitting of terahertz wave band is realized simultaneously, spectrographic detection efficiency can be increased substantially, with small in size, light-weight, high-precision, high frequency sound, the outstanding advantages such as highly reliable, long-life, low-power consumption, low cost are advantageously implemented the micromation and miniaturization of spectrum investigating system.
Description
Technical field
The present invention relates to THz wave detection technique fields, and in particular to a kind of that multichannel while detection may be implemented too
Hertz spectrographic detection chip.
Background technique
THz wave is commonly referred to as electromagnetic wave of the frequency between 0.1THz~1THz, and wave band is between microwave and infrared
Between light.Terahertz light spectrum information can obtain the optics amplitude and phase information of substance simultaneously, safety inspection, non-destructive testing,
The fields such as biomedicine, chemical analysis, communication and national defence extensive application prospect.
Tera-hertz spectra detection system is the main channel of tera-hertz spectra acquisition of information.Common tera-hertz spectra detection
The Terahertz electric field that system uses femtosecond pulse generation time to differentiate, passes through scanning probe laser and terahertz pulse relative time
Delay obtains Terahertz electric field strength and changes over time, and the spatial distribution of object under test is obtained finally by Fourier transformation.This
Kind spectroscopic analysis system is more demanding to optical element and machining accuracy, and shake slightly may cause biggish spy
Error is surveyed, stability is poor, and structure and system complex greatly limit the application range of tera-hertz spectra;It is another
Aspect, tera-hertz spectra analysis system can also be chosen the incident optical signal of specific wavelength by light splitting part, pass through Terahertz
The response intensity of detector acquisition measured signal.However, above system usually only contains a detection channels, it once can only be to one
Kind wavelength channels are detected, and which greatly limits the detection efficients of this kind of optical analysis system.
Multi-channel terahertz detection system can be assembled by single channel spectrographic detection chip, is rotated and is visited using mechanical structure
Chip is surveyed to realize the switching between different detection channels, but this system can only successively measure each channel, can not achieve true
Multichannel in positive meaning detects simultaneously, and time-consuming for measurement, and speed is slow, and each channel example reaction Time Inconsistency.Currently,
There is document to propose the multi-channel terahertz detector array based on integrated circuit technology, utilizes the different patch day of response wave band
Line realizes the frequency-selecting to terahertz wave band, it can be achieved that detecting 11 differences simultaneously in the frequency range of 0.2THz~4.3THz
Terahertz signal (the CMOS integrated antenna-coupled fied-effect transistors for of frequency range
the detection of radiation from 0.2to 4.3THz[J].IEEE Transactions on
Microwave Theory and Techniques,2012,(60):3834-3843).But the response wave band of this paster antenna
Equispaced be 400GHz, biggish frequency interval makes this kind of terahertz detector cannot be used for the inspection of tera-hertz spectra
It surveys.In order to efficiently realize Terahertz detection function, detection unit multichannel, array and the selection of narrow frequency have become at present
The Main Trends of The Development of tera-hertz spectra detector.
Summary of the invention
For the problems such as detection efficient for solving existing terahertz optics analysis system is low, and speed is slow, the present invention provides
A kind of multi-channel terahertz spectrographic detection unit and its chip, the chip can obtain the Terahertz letter of different wave length in detection
Number information detects while realization to multi-wavelength's terahertz signal.
The technical proposal for solving the technical problem of the invention is as follows:
Multi-channel terahertz spectrographic detection unit based on surface plasma body resonant vibration antenna, including surface plasma are total
Shake antenna and transistor;The surface plasma body resonant vibration antenna is made of two symmetrically arranged antenna elements, antenna element
Bar portion including semicircular head and rectangle, bar portion and head are connected semicircular the center point is vertical;The transistor is set
It sets between the bar portion of two antenna elements and perpendicular to the plane where antenna element;The grid of the transistor and surface etc.
Gas ions resoant antenna is located at same polysilicon layer.
Further, the grid of the bar portion of two antenna elements to the transistor is equidistant.
Preferably, the minimum spacing between the bar portion of two antenna elements is 1~3 μm;The semicircle of the antenna element
The radius on head is 10~70 μm;The width of the rectangular shank of the antenna element is 0.5~2 μm, and length is 10~25 μm.
Preferably, the grid length of the grid of the transistor is 0.25 μm, and grid width is 0.5 μm, threshold voltage 0.5V.
The multi-channel terahertz spectrographic detection chip that the present invention is made of above-mentioned probe unit, the surface of the chip, which is equipped with, to be visited
Array is surveyed, detection array is formed by multiple probe unit periodic arrangements;The bar portion of the detection array is put down in the same direction
Row arrangement.
The method detected using above-mentioned multi-channel terahertz spectrographic detection chip, specifically: in the crystalline substance when detection
Add suitable bias direct current voltage, while the alternating voltage letter that the surface plasma body resonant vibration antenna generates on the grid of body pipe
It number is also added on the grid of transistor;The source of the transistor is grounded, and transistor is by the process of self-mixing by AC signal
It is rectified into direct current signal, is read by the drain terminal of the transistor, at this moment each probe unit obtains single-frequency too respectively
Then the terahertz signal of each probe unit is carried out data processing to get arriving containing multi-wavelength's ingredient too by hertz signal
Hertz spectrum
Detection mechanism of the invention is: terahertz light, which is incident on surface plasma resonance antenna structure, inspires free electricity
After the surface plasma body resonant vibration of son, surface plasma body resonant vibration is converted into charge density wave, and the heart is realized single in the antenna structure
The aggregation of frequency Terahertz field strength, the terahertz signal of enhancing is directly passed to the transistor sensor in antenna center, by transistor
The exportable d. c. voltage signal with signal strong correlation of self-mixing process, realize the detection to resonance Terahertz wavelength.It will visit
Cellular construction array is surveyed, while the surface plasma resonance antenna structure in array of designs cellular construction is responded in different terahertzs
Hereby frequency is further integrated in the circuits such as acquisition, processing, control and display needed for detection signal and panel detector structure same
Detection while to multi-wavelength's signal can be realized on chip.
Compared with traditional terahertz detector system, the invention has the following advantages:
(1) surface plasma body resonant vibration antenna is selected, which can utilize integrated circuit technology directly and transistor sensing
It is integrated that device carries out array;On the other hand, the resonant frequency of surface plasma body resonant vibration antenna can be by changing antenna geometric parameters
Number is adjusted, and easily realizes the response to different Terahertz frequencies.
(2) using surface plasma body resonant vibration antenna replace traditional wave antenna, the matched design requirement of no resistance, and
Antenna size is smaller than traditional wave antenna, reduces loss and the noise of terahertz light signal.
(3) multi-channel terahertz spectrographic detection chip of the invention is not only able to achieve and carries out to multi-wavelength terahertz signal
Detection, while the single-frequency light splitting of terahertz wave band is realized, spectrographic detection efficiency can be increased substantially.
(4) detection chip of the invention is that had small in size, light-weight, high-precision using standard integrated circuit processing technique
Degree, high frequency sound, the outstanding advantages such as highly reliable, long-life, low-power consumption, low cost are advantageously implemented the miniature of spectrum investigating system
Change and minimizes.
Detailed description of the invention
Fig. 1 is the top view of standard CMOS terahertz detector cellular construction of the present invention.
Fig. 2 is the side view of standard CMOS terahertz detector cellular construction of the present invention.
Fig. 3 is the multi-channel terahertz spectrographic detection chip schematic diagram in the embodiment of the present invention.
Fig. 4 is electric field gain diagram at the feeding point of the surface plasma body resonant vibration antenna in the embodiment of the present invention.
Fig. 5 is the terahertz light spectra system signal that the multi-channel terahertz spectrographic detection chip in the embodiment of the present invention is formed
Figure.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.Obviously, described embodiment is a part of the embodiments of the present invention, rather than whole
Embodiment.Described embodiment is only used for illustrating, rather than limiting the scope of the invention.Based on implementation of the invention
Example, every other embodiment obtained by those of ordinary skill in the art without making creative efforts belong to
Protection scope of the present invention.
The present embodiment designs the multichannel of 0.5THz-1.1THz too by taking 0.18 μm of integrated circuit technology of SMIC standard as an example
Hertz spectrographic detection chip.There are six layers of metal layer in the technique rear end, is respectively M1~M6 layers from most bottom to top layer.For one
The CMOS terahertz detector of standard, cellular construction is as shown in Figure 1, include utilizing MOSFETs on bulk silicon substrate 102
(W0.5 μm of L0.18 μ m) constitutes transistor sensor 107 and the surface plasma body resonant vibration antenna using polysilicon layer preparation
101, transistor sensor 107 is placed at the central point O of antenna and perpendicular to the plane where antenna.Crystal of the present invention
Pipe is the substrate doping 10 using p-type silicon as substrate 10217Magnitude.The source 105 and drain terminal 106 of transistor are heavy doping n+
Type, institute's doping are phosphorus, doping concentration 1020Magnitude.The grid 103 of transistor, grid length are 0.25 μm, and grid width is 0.5 μm,
Oxidated layer thickness is 4nm, threshold voltage 0.5V.Grid in the integrated circuit technology of surface plasma body resonant vibration antenna 101
Polysilicon layer 104 makes, and is filled around polysilicon layer 104 by silica dioxide medium, surface plasma body resonant vibration antenna 101 and crystalline substance
The grid 103 of body pipe is in same polysilicon layer, and thickness is all 0.2 μm.
As illustrated in fig. 1 and 2, surface plasma body resonant vibration antenna 101 is made of two symmetrically arranged antenna elements, antenna
Unit includes the bar portion of semicircular head and rectangle, and bar portion and head are connected semicircular the center point is vertical;Two antennas
The bar portion of unit to transistor grid 103 distance s it is equal, feeding point is located at grid 103.Two semicircles of antenna element
Structure minimum spacing is g, and the radius of semicircular structure is L-d, and the width of the rectangular configuration of the center point connection is w, and length is
D, surface plasma body resonant vibration antenna with a thickness of h.When the wavelength of incident THz wave is attached in surface plasma body resonant vibration wavelength
When close, at the center of surface plasma body resonant vibration antenna, THz wave electric field increases hundred times, for remaining wave band, the electricity of O point
Field gain very little.
In specific frequency, terahertz light resonates surface plasma resonance Antenna Operation with electronics, to realize too
Therefore the response of hertz wavelength is usually that narrow frequency response is answered by the antenna that this principle designs.Assuming that surface plasma body resonant vibration
Inner antenna basic mode TM0Mode is excited, then the resonant frequency of surface plasma body resonant vibration antenna are as follows:
Wherein, β represents TM in surface plasma body resonant vibration antenna0The propagation constant of wave, R are surface plasma body resonant vibration days
The field distance that line both sides leak out, c indicate that the light velocity in vacuum, a and b indicate ginseng relevant to antenna material and geometry
Amount.The formula show surface plasma body resonant vibration antenna resonant frequency can by change antenna geometric parameter (R, a, b) into
Row is adjusted, and realizes the response to different wave length.
Fig. 3 is a kind of multi-channel terahertz spectrographic detection chip 201 provided in this embodiment, integrated chip light splitting mould
Block, the face array and data acquisition and processing (DAP) circuit being made of probe unit.Surface etc. in array of designs cellular construction 202
Ion resonance antenna structure is responded in different Terahertz frequencies.In the present embodiment, four kinds of surface plasma body resonant vibrations are devised
Antenna size.The geometric parameter of the first surface plasma resonance antenna A be d=22 μm, L=57 μm, second of surface etc. from
The geometric parameter of daughter resoant antenna B is d=18 μm, L=30 μm, the geometric parameters of the third surface plasma body resonant vibration antenna C
Number is d=13 μm, L=30 μm, and the geometric parameter of the 4th kind of surface plasma body resonant vibration antenna D is d=15 μm, L=33 μm, this
The shared parameter of four kinds of surface plasma body resonant vibration antennas is w=1 μm, g=2 μm, h=0.2 μm.Using HFSS simulation software,
According to the structural parameters of four kinds of designed above surface plasma body resonant vibration antennas, the structural model of four kinds of antennas is established,
A series of solution is carried out to calculate.Fig. 4 is that electric field is varying with frequency at the feeding point of four kinds of surface plasma body resonant vibration antennas
Gain diagram.From the figure, it can be seen that four kinds of antennas have response, every kind of antenna resonance frequency in the bandwidth of 0.4THz~1.1THz
Electric field gain is all larger than 150 at the feeding point of rate, the Signal to Noise Ratio (SNR) of cross-talk noise caused by signal of the antenna B to day electric wire A
The signal-to-noise ratio of=13.01dB, the crosstalk noise between remaining each antenna are all larger than 10dB, what these four antennas and transistor integrated
The bandwidth that face battle array terahertz detector can detect tera-hertz spectra is 0.7THz.Therefore these four antennas crosstalk, bandwidth and
Gain etc. complies fully with design requirement.
Multi-channel terahertz light spectrum image-forming can be carried out using above-mentioned multi-channel terahertz spectrographic detection chip.Such as Fig. 5 institute
Show, terahertz light spectra system includes: Terahertz wave source 401, collector lens 402 and 404, sample to be tested 403, face battle array Terahertz spy
Survey device 405, data processing system 407 and display 408.Terahertz wave source 401 issues the THz wave of a branch of dispersion, through optically focused
Lens 402 and 404 are irradiated to sample to be tested 403, and transmitted wave converges to face battle array terahertz detector 405 after entering collector lens,
Terahertz detection array element 406 is made of surface plasma body resonant vibration antenna 101 and transistor sensor 107, when work
Adduction fits bias direct current voltage, while the alternating voltage that surface plasma body resonant vibration antenna 101 generates on the grid 103 of transistor
Signal is also added on the grid 103 of transistor, and transistor source 105 is grounded, and transistor is believed exchange by the process of self-mixing
Number it is rectified into direct current signal, is read by transistor drain terminal 106, in this way, each array element 406 is as face battle array terahertz detection
Each autonomous channel of device 405, so that system can detect the terahertz wave signal of multi-wavelength simultaneously, then again by this group of Terahertz
Wave signal is input to data processing system 407, and terahertz wave signal that treated is input to display 408, can be obtained containing
The tera-hertz spectra of multi-wavelength's ingredient.
Claims (6)
1. the multi-channel terahertz spectrographic detection unit based on surface plasma body resonant vibration antenna, which is characterized in that the detection list
Member includes surface plasma body resonant vibration antenna and transistor;The surface plasma body resonant vibration antenna is by two symmetrically arranged days
Line unit is constituted, and antenna element includes that the bar portion of semicircular head and rectangle, bar portion and head are hung down in semicircular the center point
It is direct-connected to connect;The transistor is arranged between the bar portion of two antenna elements and perpendicular to the plane where antenna element;It is described
The grid and surface plasma body resonant vibration antenna of transistor are located at same polysilicon layer.
2. the multi-channel terahertz spectrographic detection unit according to claim 1 based on surface plasma body resonant vibration antenna,
It is characterized in that, the grid of the bar portion of two antenna elements to the transistor is equidistant.
3. the multi-channel terahertz spectrographic detection unit according to claim 1 based on surface plasma body resonant vibration antenna,
It is characterized in that, the minimum spacing between the bar portion of two antenna elements is 1~3 μm;The domed head of the antenna element
Radius be 10~70 μm;The width of the rectangular shank of the antenna element is 0.5~2 μm, and length is 10~25 μm.
4. the multi-channel terahertz spectrographic detection unit according to claim 1 based on surface plasma body resonant vibration antenna,
It is characterized in that, the grid length of the grid of the transistor is 0.25 μm, grid width is 0.5 μm, threshold voltage 0.5V.
5. the multi-channel terahertz spectrographic detection chip being made of probe unit described in claim 1, which is characterized in that chip
Surface be equipped with detection array, detection array forms by multiple probe unit periodic arrangements;The bar portion of the detection array
It is arranged in parallel in the same direction.
6. the detection method of multi-channel terahertz spectrographic detection chip according to claim 5, which is characterized in that when detection
Add suitable bias direct current voltage, while the friendship that the surface plasma body resonant vibration antenna generates on the grid of the transistor
Stream voltage signal is also added on the grid of transistor;The source of the transistor is grounded, and transistor will by the process of self-mixing
AC signal is rectified into direct current signal, is read by the drain terminal of the transistor, at this moment each probe unit obtains single respectively
Then the terahertz signal of each probe unit is carried out data processing to get to containing multi-wavelength by the terahertz signal of frequency
The tera-hertz spectra of ingredient.
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