Nothing Special   »   [go: up one dir, main page]

CN110274889A - Multi-channel terahertz spectrographic detection unit based on surface plasma body resonant vibration antenna - Google Patents

Multi-channel terahertz spectrographic detection unit based on surface plasma body resonant vibration antenna Download PDF

Info

Publication number
CN110274889A
CN110274889A CN201810213972.7A CN201810213972A CN110274889A CN 110274889 A CN110274889 A CN 110274889A CN 201810213972 A CN201810213972 A CN 201810213972A CN 110274889 A CN110274889 A CN 110274889A
Authority
CN
China
Prior art keywords
antenna
transistor
surface plasma
terahertz
plasma body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201810213972.7A
Other languages
Chinese (zh)
Other versions
CN110274889B (en
Inventor
纪小丽
罗明成
桑浩
林栩凌
任芳芳
闫锋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanjing University
Original Assignee
Nanjing University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanjing University filed Critical Nanjing University
Priority to CN201810213972.7A priority Critical patent/CN110274889B/en
Publication of CN110274889A publication Critical patent/CN110274889A/en
Application granted granted Critical
Publication of CN110274889B publication Critical patent/CN110274889B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01Arrangements or apparatus for facilitating the optical investigation
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3581Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
    • G01N21/3586Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation by Terahertz time domain spectroscopy [THz-TDS]

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Toxicology (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Abstract

The invention discloses a kind of multi-channel terahertz spectrographic detection unit based on surface plasma body resonant vibration antenna.The probe unit includes surface plasma body resonant vibration antenna and transistor;Surface plasma body resonant vibration antenna is made of two symmetrically arranged antenna elements, and antenna element includes the bar portion of semicircular head and rectangle, and bar portion and head are connected semicircular the center point is vertical;Transistor is arranged between the bar portion of two antenna elements and perpendicular to the plane where antenna element;The grid and resoant antenna of transistor are located at same metal layer.The multi-channel terahertz spectrographic detection chip being made of above-mentioned probe unit, it is not only able to achieve and multi-wavelength terahertz signal is detected, the single-frequency light splitting of terahertz wave band is realized simultaneously, spectrographic detection efficiency can be increased substantially, with small in size, light-weight, high-precision, high frequency sound, the outstanding advantages such as highly reliable, long-life, low-power consumption, low cost are advantageously implemented the micromation and miniaturization of spectrum investigating system.

Description

Multi-channel terahertz spectrographic detection unit based on surface plasma body resonant vibration antenna
Technical field
The present invention relates to THz wave detection technique fields, and in particular to a kind of that multichannel while detection may be implemented too Hertz spectrographic detection chip.
Background technique
THz wave is commonly referred to as electromagnetic wave of the frequency between 0.1THz~1THz, and wave band is between microwave and infrared Between light.Terahertz light spectrum information can obtain the optics amplitude and phase information of substance simultaneously, safety inspection, non-destructive testing, The fields such as biomedicine, chemical analysis, communication and national defence extensive application prospect.
Tera-hertz spectra detection system is the main channel of tera-hertz spectra acquisition of information.Common tera-hertz spectra detection The Terahertz electric field that system uses femtosecond pulse generation time to differentiate, passes through scanning probe laser and terahertz pulse relative time Delay obtains Terahertz electric field strength and changes over time, and the spatial distribution of object under test is obtained finally by Fourier transformation.This Kind spectroscopic analysis system is more demanding to optical element and machining accuracy, and shake slightly may cause biggish spy Error is surveyed, stability is poor, and structure and system complex greatly limit the application range of tera-hertz spectra;It is another Aspect, tera-hertz spectra analysis system can also be chosen the incident optical signal of specific wavelength by light splitting part, pass through Terahertz The response intensity of detector acquisition measured signal.However, above system usually only contains a detection channels, it once can only be to one Kind wavelength channels are detected, and which greatly limits the detection efficients of this kind of optical analysis system.
Multi-channel terahertz detection system can be assembled by single channel spectrographic detection chip, is rotated and is visited using mechanical structure Chip is surveyed to realize the switching between different detection channels, but this system can only successively measure each channel, can not achieve true Multichannel in positive meaning detects simultaneously, and time-consuming for measurement, and speed is slow, and each channel example reaction Time Inconsistency.Currently, There is document to propose the multi-channel terahertz detector array based on integrated circuit technology, utilizes the different patch day of response wave band Line realizes the frequency-selecting to terahertz wave band, it can be achieved that detecting 11 differences simultaneously in the frequency range of 0.2THz~4.3THz Terahertz signal (the CMOS integrated antenna-coupled fied-effect transistors for of frequency range the detection of radiation from 0.2to 4.3THz[J].IEEE Transactions on Microwave Theory and Techniques,2012,(60):3834-3843).But the response wave band of this paster antenna Equispaced be 400GHz, biggish frequency interval makes this kind of terahertz detector cannot be used for the inspection of tera-hertz spectra It surveys.In order to efficiently realize Terahertz detection function, detection unit multichannel, array and the selection of narrow frequency have become at present The Main Trends of The Development of tera-hertz spectra detector.
Summary of the invention
For the problems such as detection efficient for solving existing terahertz optics analysis system is low, and speed is slow, the present invention provides A kind of multi-channel terahertz spectrographic detection unit and its chip, the chip can obtain the Terahertz letter of different wave length in detection Number information detects while realization to multi-wavelength's terahertz signal.
The technical proposal for solving the technical problem of the invention is as follows:
Multi-channel terahertz spectrographic detection unit based on surface plasma body resonant vibration antenna, including surface plasma are total Shake antenna and transistor;The surface plasma body resonant vibration antenna is made of two symmetrically arranged antenna elements, antenna element Bar portion including semicircular head and rectangle, bar portion and head are connected semicircular the center point is vertical;The transistor is set It sets between the bar portion of two antenna elements and perpendicular to the plane where antenna element;The grid of the transistor and surface etc. Gas ions resoant antenna is located at same polysilicon layer.
Further, the grid of the bar portion of two antenna elements to the transistor is equidistant.
Preferably, the minimum spacing between the bar portion of two antenna elements is 1~3 μm;The semicircle of the antenna element The radius on head is 10~70 μm;The width of the rectangular shank of the antenna element is 0.5~2 μm, and length is 10~25 μm.
Preferably, the grid length of the grid of the transistor is 0.25 μm, and grid width is 0.5 μm, threshold voltage 0.5V.
The multi-channel terahertz spectrographic detection chip that the present invention is made of above-mentioned probe unit, the surface of the chip, which is equipped with, to be visited Array is surveyed, detection array is formed by multiple probe unit periodic arrangements;The bar portion of the detection array is put down in the same direction Row arrangement.
The method detected using above-mentioned multi-channel terahertz spectrographic detection chip, specifically: in the crystalline substance when detection Add suitable bias direct current voltage, while the alternating voltage letter that the surface plasma body resonant vibration antenna generates on the grid of body pipe It number is also added on the grid of transistor;The source of the transistor is grounded, and transistor is by the process of self-mixing by AC signal It is rectified into direct current signal, is read by the drain terminal of the transistor, at this moment each probe unit obtains single-frequency too respectively Then the terahertz signal of each probe unit is carried out data processing to get arriving containing multi-wavelength's ingredient too by hertz signal Hertz spectrum
Detection mechanism of the invention is: terahertz light, which is incident on surface plasma resonance antenna structure, inspires free electricity After the surface plasma body resonant vibration of son, surface plasma body resonant vibration is converted into charge density wave, and the heart is realized single in the antenna structure The aggregation of frequency Terahertz field strength, the terahertz signal of enhancing is directly passed to the transistor sensor in antenna center, by transistor The exportable d. c. voltage signal with signal strong correlation of self-mixing process, realize the detection to resonance Terahertz wavelength.It will visit Cellular construction array is surveyed, while the surface plasma resonance antenna structure in array of designs cellular construction is responded in different terahertzs Hereby frequency is further integrated in the circuits such as acquisition, processing, control and display needed for detection signal and panel detector structure same Detection while to multi-wavelength's signal can be realized on chip.
Compared with traditional terahertz detector system, the invention has the following advantages:
(1) surface plasma body resonant vibration antenna is selected, which can utilize integrated circuit technology directly and transistor sensing It is integrated that device carries out array;On the other hand, the resonant frequency of surface plasma body resonant vibration antenna can be by changing antenna geometric parameters Number is adjusted, and easily realizes the response to different Terahertz frequencies.
(2) using surface plasma body resonant vibration antenna replace traditional wave antenna, the matched design requirement of no resistance, and Antenna size is smaller than traditional wave antenna, reduces loss and the noise of terahertz light signal.
(3) multi-channel terahertz spectrographic detection chip of the invention is not only able to achieve and carries out to multi-wavelength terahertz signal Detection, while the single-frequency light splitting of terahertz wave band is realized, spectrographic detection efficiency can be increased substantially.
(4) detection chip of the invention is that had small in size, light-weight, high-precision using standard integrated circuit processing technique Degree, high frequency sound, the outstanding advantages such as highly reliable, long-life, low-power consumption, low cost are advantageously implemented the miniature of spectrum investigating system Change and minimizes.
Detailed description of the invention
Fig. 1 is the top view of standard CMOS terahertz detector cellular construction of the present invention.
Fig. 2 is the side view of standard CMOS terahertz detector cellular construction of the present invention.
Fig. 3 is the multi-channel terahertz spectrographic detection chip schematic diagram in the embodiment of the present invention.
Fig. 4 is electric field gain diagram at the feeding point of the surface plasma body resonant vibration antenna in the embodiment of the present invention.
Fig. 5 is the terahertz light spectra system signal that the multi-channel terahertz spectrographic detection chip in the embodiment of the present invention is formed Figure.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention Formula is described in further detail.Obviously, described embodiment is a part of the embodiments of the present invention, rather than whole Embodiment.Described embodiment is only used for illustrating, rather than limiting the scope of the invention.Based on implementation of the invention Example, every other embodiment obtained by those of ordinary skill in the art without making creative efforts belong to Protection scope of the present invention.
The present embodiment designs the multichannel of 0.5THz-1.1THz too by taking 0.18 μm of integrated circuit technology of SMIC standard as an example Hertz spectrographic detection chip.There are six layers of metal layer in the technique rear end, is respectively M1~M6 layers from most bottom to top layer.For one The CMOS terahertz detector of standard, cellular construction is as shown in Figure 1, include utilizing MOSFETs on bulk silicon substrate 102 (W0.5 μm of L0.18 μ m) constitutes transistor sensor 107 and the surface plasma body resonant vibration antenna using polysilicon layer preparation 101, transistor sensor 107 is placed at the central point O of antenna and perpendicular to the plane where antenna.Crystal of the present invention Pipe is the substrate doping 10 using p-type silicon as substrate 10217Magnitude.The source 105 and drain terminal 106 of transistor are heavy doping n+ Type, institute's doping are phosphorus, doping concentration 1020Magnitude.The grid 103 of transistor, grid length are 0.25 μm, and grid width is 0.5 μm, Oxidated layer thickness is 4nm, threshold voltage 0.5V.Grid in the integrated circuit technology of surface plasma body resonant vibration antenna 101 Polysilicon layer 104 makes, and is filled around polysilicon layer 104 by silica dioxide medium, surface plasma body resonant vibration antenna 101 and crystalline substance The grid 103 of body pipe is in same polysilicon layer, and thickness is all 0.2 μm.
As illustrated in fig. 1 and 2, surface plasma body resonant vibration antenna 101 is made of two symmetrically arranged antenna elements, antenna Unit includes the bar portion of semicircular head and rectangle, and bar portion and head are connected semicircular the center point is vertical;Two antennas The bar portion of unit to transistor grid 103 distance s it is equal, feeding point is located at grid 103.Two semicircles of antenna element Structure minimum spacing is g, and the radius of semicircular structure is L-d, and the width of the rectangular configuration of the center point connection is w, and length is D, surface plasma body resonant vibration antenna with a thickness of h.When the wavelength of incident THz wave is attached in surface plasma body resonant vibration wavelength When close, at the center of surface plasma body resonant vibration antenna, THz wave electric field increases hundred times, for remaining wave band, the electricity of O point Field gain very little.
In specific frequency, terahertz light resonates surface plasma resonance Antenna Operation with electronics, to realize too Therefore the response of hertz wavelength is usually that narrow frequency response is answered by the antenna that this principle designs.Assuming that surface plasma body resonant vibration Inner antenna basic mode TM0Mode is excited, then the resonant frequency of surface plasma body resonant vibration antenna are as follows:
Wherein, β represents TM in surface plasma body resonant vibration antenna0The propagation constant of wave, R are surface plasma body resonant vibration days The field distance that line both sides leak out, c indicate that the light velocity in vacuum, a and b indicate ginseng relevant to antenna material and geometry Amount.The formula show surface plasma body resonant vibration antenna resonant frequency can by change antenna geometric parameter (R, a, b) into Row is adjusted, and realizes the response to different wave length.
Fig. 3 is a kind of multi-channel terahertz spectrographic detection chip 201 provided in this embodiment, integrated chip light splitting mould Block, the face array and data acquisition and processing (DAP) circuit being made of probe unit.Surface etc. in array of designs cellular construction 202 Ion resonance antenna structure is responded in different Terahertz frequencies.In the present embodiment, four kinds of surface plasma body resonant vibrations are devised Antenna size.The geometric parameter of the first surface plasma resonance antenna A be d=22 μm, L=57 μm, second of surface etc. from The geometric parameter of daughter resoant antenna B is d=18 μm, L=30 μm, the geometric parameters of the third surface plasma body resonant vibration antenna C Number is d=13 μm, L=30 μm, and the geometric parameter of the 4th kind of surface plasma body resonant vibration antenna D is d=15 μm, L=33 μm, this The shared parameter of four kinds of surface plasma body resonant vibration antennas is w=1 μm, g=2 μm, h=0.2 μm.Using HFSS simulation software, According to the structural parameters of four kinds of designed above surface plasma body resonant vibration antennas, the structural model of four kinds of antennas is established, A series of solution is carried out to calculate.Fig. 4 is that electric field is varying with frequency at the feeding point of four kinds of surface plasma body resonant vibration antennas Gain diagram.From the figure, it can be seen that four kinds of antennas have response, every kind of antenna resonance frequency in the bandwidth of 0.4THz~1.1THz Electric field gain is all larger than 150 at the feeding point of rate, the Signal to Noise Ratio (SNR) of cross-talk noise caused by signal of the antenna B to day electric wire A The signal-to-noise ratio of=13.01dB, the crosstalk noise between remaining each antenna are all larger than 10dB, what these four antennas and transistor integrated The bandwidth that face battle array terahertz detector can detect tera-hertz spectra is 0.7THz.Therefore these four antennas crosstalk, bandwidth and Gain etc. complies fully with design requirement.
Multi-channel terahertz light spectrum image-forming can be carried out using above-mentioned multi-channel terahertz spectrographic detection chip.Such as Fig. 5 institute Show, terahertz light spectra system includes: Terahertz wave source 401, collector lens 402 and 404, sample to be tested 403, face battle array Terahertz spy Survey device 405, data processing system 407 and display 408.Terahertz wave source 401 issues the THz wave of a branch of dispersion, through optically focused Lens 402 and 404 are irradiated to sample to be tested 403, and transmitted wave converges to face battle array terahertz detector 405 after entering collector lens, Terahertz detection array element 406 is made of surface plasma body resonant vibration antenna 101 and transistor sensor 107, when work Adduction fits bias direct current voltage, while the alternating voltage that surface plasma body resonant vibration antenna 101 generates on the grid 103 of transistor Signal is also added on the grid 103 of transistor, and transistor source 105 is grounded, and transistor is believed exchange by the process of self-mixing Number it is rectified into direct current signal, is read by transistor drain terminal 106, in this way, each array element 406 is as face battle array terahertz detection Each autonomous channel of device 405, so that system can detect the terahertz wave signal of multi-wavelength simultaneously, then again by this group of Terahertz Wave signal is input to data processing system 407, and terahertz wave signal that treated is input to display 408, can be obtained containing The tera-hertz spectra of multi-wavelength's ingredient.

Claims (6)

1. the multi-channel terahertz spectrographic detection unit based on surface plasma body resonant vibration antenna, which is characterized in that the detection list Member includes surface plasma body resonant vibration antenna and transistor;The surface plasma body resonant vibration antenna is by two symmetrically arranged days Line unit is constituted, and antenna element includes that the bar portion of semicircular head and rectangle, bar portion and head are hung down in semicircular the center point It is direct-connected to connect;The transistor is arranged between the bar portion of two antenna elements and perpendicular to the plane where antenna element;It is described The grid and surface plasma body resonant vibration antenna of transistor are located at same polysilicon layer.
2. the multi-channel terahertz spectrographic detection unit according to claim 1 based on surface plasma body resonant vibration antenna, It is characterized in that, the grid of the bar portion of two antenna elements to the transistor is equidistant.
3. the multi-channel terahertz spectrographic detection unit according to claim 1 based on surface plasma body resonant vibration antenna, It is characterized in that, the minimum spacing between the bar portion of two antenna elements is 1~3 μm;The domed head of the antenna element Radius be 10~70 μm;The width of the rectangular shank of the antenna element is 0.5~2 μm, and length is 10~25 μm.
4. the multi-channel terahertz spectrographic detection unit according to claim 1 based on surface plasma body resonant vibration antenna, It is characterized in that, the grid length of the grid of the transistor is 0.25 μm, grid width is 0.5 μm, threshold voltage 0.5V.
5. the multi-channel terahertz spectrographic detection chip being made of probe unit described in claim 1, which is characterized in that chip Surface be equipped with detection array, detection array forms by multiple probe unit periodic arrangements;The bar portion of the detection array It is arranged in parallel in the same direction.
6. the detection method of multi-channel terahertz spectrographic detection chip according to claim 5, which is characterized in that when detection Add suitable bias direct current voltage, while the friendship that the surface plasma body resonant vibration antenna generates on the grid of the transistor Stream voltage signal is also added on the grid of transistor;The source of the transistor is grounded, and transistor will by the process of self-mixing AC signal is rectified into direct current signal, is read by the drain terminal of the transistor, at this moment each probe unit obtains single respectively Then the terahertz signal of each probe unit is carried out data processing to get to containing multi-wavelength by the terahertz signal of frequency The tera-hertz spectra of ingredient.
CN201810213972.7A 2018-03-15 2018-03-15 Multichannel terahertz spectrum detection unit based on surface plasma resonance antenna Active CN110274889B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810213972.7A CN110274889B (en) 2018-03-15 2018-03-15 Multichannel terahertz spectrum detection unit based on surface plasma resonance antenna

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201810213972.7A CN110274889B (en) 2018-03-15 2018-03-15 Multichannel terahertz spectrum detection unit based on surface plasma resonance antenna

Publications (2)

Publication Number Publication Date
CN110274889A true CN110274889A (en) 2019-09-24
CN110274889B CN110274889B (en) 2021-05-28

Family

ID=67957651

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810213972.7A Active CN110274889B (en) 2018-03-15 2018-03-15 Multichannel terahertz spectrum detection unit based on surface plasma resonance antenna

Country Status (1)

Country Link
CN (1) CN110274889B (en)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102374974A (en) * 2010-08-25 2012-03-14 中国科学院电子学研究所 Attenuated total reflection (ATR) spectrum measurement type Fourier transform spectrometer based on integrated optical waveguide
CN102393375A (en) * 2011-08-24 2012-03-28 北京广微积电科技有限公司 Passive gas imaging system
CN102770750A (en) * 2010-02-26 2012-11-07 爱信精机株式会社 Coating film inspection apparatus and inspection method
CN104091837A (en) * 2014-06-13 2014-10-08 南京大学 Terahertz detector based on optical antenna
CN104332695A (en) * 2014-08-12 2015-02-04 中国空空导弹研究院 Refrigeration-type terahertz/infrared lamination detector
CN104900999A (en) * 2015-05-13 2015-09-09 南京大学 Terahertz double-frequency antenna based on integrated circuit technology
CN105449030A (en) * 2015-12-29 2016-03-30 南京大学 Terahertz detector for optical antennas based on active area material
CN106525752A (en) * 2016-12-07 2017-03-22 中国海洋大学 Method for infrared spectroscopy through nano-optics antenna
EP3144664A1 (en) * 2015-09-15 2017-03-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. System and method for determining characteristics of an object or a sample

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102770750A (en) * 2010-02-26 2012-11-07 爱信精机株式会社 Coating film inspection apparatus and inspection method
CN102374974A (en) * 2010-08-25 2012-03-14 中国科学院电子学研究所 Attenuated total reflection (ATR) spectrum measurement type Fourier transform spectrometer based on integrated optical waveguide
CN102393375A (en) * 2011-08-24 2012-03-28 北京广微积电科技有限公司 Passive gas imaging system
CN104091837A (en) * 2014-06-13 2014-10-08 南京大学 Terahertz detector based on optical antenna
CN104332695A (en) * 2014-08-12 2015-02-04 中国空空导弹研究院 Refrigeration-type terahertz/infrared lamination detector
CN104900999A (en) * 2015-05-13 2015-09-09 南京大学 Terahertz double-frequency antenna based on integrated circuit technology
EP3144664A1 (en) * 2015-09-15 2017-03-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. System and method for determining characteristics of an object or a sample
CN105449030A (en) * 2015-12-29 2016-03-30 南京大学 Terahertz detector for optical antennas based on active area material
CN106525752A (en) * 2016-12-07 2017-03-22 中国海洋大学 Method for infrared spectroscopy through nano-optics antenna

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
YINGFANG MA 等: "Plasmon-induced transparency in twisted Fano terahertz metamaterials", 《OPTICAL MATERIALS EXPRESS》 *
孔蛟: "基于金属阵列等离子体共振增强的太赫兹光电导天线设计", 《机电工程》 *

Also Published As

Publication number Publication date
CN110274889B (en) 2021-05-28

Similar Documents

Publication Publication Date Title
Shinagawa et al. A near-field-sensing transceiver for intrabody communication based on the electrooptic effect
US20200249156A1 (en) Advanced thz system and method
Wojtas et al. Aspects of the application of cavity enhanced spectroscopy to nitrogen oxides detection
CN202631110U (en) Terahertz time domain double spectrum detecting system
JP2021507271A (en) Atom-based electromagnetic field sensing elements and measurement systems
CN101532951B (en) Optical fiber mixed gas quantitative measurement system and measurement method
CN107356820A (en) A kind of electromagnetic field near field imaging system and method based on pulse optical detection magnetic resonance
US20060226348A1 (en) System and method for power ratio determination with common mode suppression through electric field differencing
JP6245600B2 (en) Polarization sensitive terahertz wave detector
CN105352583A (en) Optical method, device and application for measuring supersonic wave sound pressure and sound intensity
CN105823755B (en) It is a kind of that sensor-based system is absorbed from mixed gas based on tunable semiconductor laser
CN101923051A (en) Infrared spectrum type MEMS gas sensor based on array waveguide light splitting
CN105043930B (en) Using the detection method of the detection means with micro-structural alkali metal air chamber alkali-metal vapor atoms density
CN103175791A (en) Multi-quartz-crystal-oscillator spectral phonometer and gas detection device employing same
CN206696177U (en) A kind of Portable near infrared multi-channel spectrometer
CN105044046B (en) A kind of THz wave organic matter detection device and method based on disk periodic structure
US20170067822A1 (en) Cavity enhanced spectroscopy using off-axis paths
CN105911022B (en) Hazardous chemical substance remote sensing detection method and device based on wide-tuning external cavity quantum cascade laser
CN106841082B (en) Portable terahertz time-domain spectroscopy instrument
CN101839848B (en) CMOS/MEMS compatible spectrum type gas sensor
CN108931495A (en) Terahertz time-domain spectroscopy synchronized measurement system and method
Mansha et al. A 220–300 GHz twin-FET detector for rotational spectroscopy of gas mixtures
CN102346071A (en) Terahertz wave band nanosecond time-resolved Fourier transform spectrometer
Niehues et al. A matter of symmetry: terahertz polarization detection properties of a multi-contact photoconductive antenna evaluated by a response matrix analysis
CN110274889A (en) Multi-channel terahertz spectrographic detection unit based on surface plasma body resonant vibration antenna

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant