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CN110112097A - The production method of wafer bonding structure and wafer bonding structure - Google Patents

The production method of wafer bonding structure and wafer bonding structure Download PDF

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Publication number
CN110112097A
CN110112097A CN201910428133.1A CN201910428133A CN110112097A CN 110112097 A CN110112097 A CN 110112097A CN 201910428133 A CN201910428133 A CN 201910428133A CN 110112097 A CN110112097 A CN 110112097A
Authority
CN
China
Prior art keywords
metal interconnection
medium layer
opening
hole
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910428133.1A
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Chinese (zh)
Inventor
沈新林
王海宽
洪波
郭松辉
林宗贤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huaian Imaging Device Manufacturer Corp
Original Assignee
Huaian Imaging Device Manufacturer Corp
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Filing date
Publication date
Application filed by Huaian Imaging Device Manufacturer Corp filed Critical Huaian Imaging Device Manufacturer Corp
Priority to CN201910428133.1A priority Critical patent/CN110112097A/en
Publication of CN110112097A publication Critical patent/CN110112097A/en
Pending legal-status Critical Current

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    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
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Abstract

The application provides a kind of wafer bonding structure and forming method thereof.The wafer bonding structure includes: the first wafer；First medium layer is located on first wafer；Metal interconnection structure is located in the first medium layer, and the metal interconnection structure is divided into the sub- metal interconnection structure of at least two locally connecteds.The wafer bonding structure and forming method, the surface of the metal interconnection structure is divided into the sub- metal interconnection structure of at least two locally connecteds, not only realize the electrical connection between a sub- metal interconnection structure, the surface area of bonding face when being bonded is also reduced, the electrical connection quality between wafer is improved.

Description

The production method of wafer bonding structure and wafer bonding structure
Technical field
This application involves field of semiconductor manufacture, it particularly relates to a kind of wafer bonding structure and wafer bonding knot The production method of structure.
Background technique
Wafer scale copper-copper bonding (Wafer level Cu-Cu bonding) is the interconnection technique between a kind of wafer, this At least a pair of of copper interconnection structure is mutually aligned bonding by interconnection technique, to realize being electrically connected for copper interconnection structure between multiple wafers It connects.
The copper interconnection structure is with reference to shown in attached drawing 1, including the first wafer 100, on first wafer 100 First medium layer 101 and the first copper interconnection structure 102 in the first medium layer 101, due to the first copper-connection knot The copper interconnection structure is ground using CMP in 102 formation process of structure, there are recess portions on 102 surface of the first copper interconnection structure (Dishing)10。
With reference to shown in attached drawing 2, when the second dielectric layer 201 being located on second wafer 200 and positioned at described second The second copper interconnection structure 202 in dielectric layer 201 is with the first medium layer 101 and in the first medium layer 101 First copper interconnection structure 102 is bonded, and the area of the recess portion 20 of formation will double.
With reference to shown in attached drawing 3, even if handling the first copper interconnection structure 102 and second after the bonding using annealing process The area of copper interconnection structure 202, the recess portion 20 is still larger.The recess portion 20 that the bonding technology is formed is greater than design specification When, it will influence the electrical property of device after bonding.
Therefore, it is necessary to design the production method of new bonding structure and the bonding structure, improve between the wafer The electrical connection quality of copper interconnection structure.
Summary of the invention
Technical scheme technical problems to be solved are: existing for existing wafer scale copper-copper bonding bonding face Greater than the technological deficiency of the recess portion of design specification, the production method of a kind of wafer bonding structure and wafer bonding structure is provided, To reduce the recess portion size to design specification hereinafter, to improve the electrical connection quality between wafer.
The one side of the application provides a kind of forming method of wafer bonding structure, comprising: the first wafer is provided, described First medium layer is formed on first wafer；First through hole is formed in the first medium layer, the first through hole does not run through institute State first medium layer；The second exposure mask is formed on the first medium layer, second exposure mask has the second opening, wherein institute The second opening is stated to expose the first through hole and separate figure for defining to have in first groove and second opening The son that second opening is separated at least two locally connecteds is open by case, the partition pattern；Etch the first medium Layer forms the first groove, and continues to etch the first through hole to exposing first wafer；Remove described second Exposure mask；Interconnection materials are filled on the first medium layer and in first groove and first through hole；Remove described first Interconnection materials on dielectric layer form metal interconnection structure in the first groove and first through hole.
In some embodiments of the present application, the method that first through hole is formed in the first medium layer includes: in institute It states and forms the first exposure mask on first medium layer, first exposure mask has the first opening, and first opening is for defining first Through-hole；It etches the first medium layer and forms first through hole；Remove first exposure mask.
In some embodiments of the present application, the side of metal interconnection structure is formed in the first groove and first through hole Method includes: to fill interconnection materials on the first medium layer and in first groove and first through hole；Remove described Interconnection materials on one dielectric layer form metal interconnection structure in the first groove and first through hole.
In some embodiments of the present application, the cross-sectional area of the sub- opening is less than 1.5 μm of 1.5 μ m.
In some embodiments of the present application, the cross section of the sub- opening is square or round or rectangle.
In some embodiments of the present application, the quantity of the sub- opening is 4, and the shape of 4 sons opening And size is identical.
The another aspect of the application provides a kind of wafer bonding structure, comprising: the first wafer；First medium layer is located at institute It states on the first wafer；Metal interconnection structure is located in the first medium layer, and the metal interconnection structure is divided at least The sub- metal interconnection structure of Liang Ge locally connected.
In some embodiments of the present application, the cross-sectional area of the sub- metal interconnection structure is less than 1.5 μ m, 1.5 μ m。
In some embodiments of the present application, the cross section of the sub- metal interconnection structure be square or it is round or Rectangle.
In some embodiments of the present application, the quantity of the sub- metal interconnection structure is 4, and 4 interests Shape and the size for belonging to interconnection structure are identical.
Using the production method of wafer bonding structure and wafer bonding structure described in the embodiment of the present application, by the gold The surface for belonging to interconnection structure is divided into the sub- metal interconnection structure of at least two locally connecteds, not only realizes a sub- metal interconnection Electrical connection between structure also reduces the surface area of bonding face when being bonded, and keeps the recess portion generated on the bonding face small In design specification, the electrical connection quality between wafer is improved.
Other feature will be set forth in part in the description in the application.By the elaboration, make the following drawings and The content of embodiment narration becomes apparent for those of ordinary skills.Inventive point in the application can pass through Practice is sufficiently illustrated using method described in detailed example discussed below, means and combinations thereof.
Detailed description of the invention
Exemplary embodiment disclosed in this application is described in detail in the following drawings.Wherein identical appended drawing reference is in attached drawing Several views in indicate similar structure.Those of ordinary skill in the art will be understood that these embodiments be non-limiting, Exemplary embodiment, the purpose that attached drawing is merely to illustrate and describes, it is no intended to it limits the scope of the present disclosure, other modes Embodiment may also similarly complete the intention of the invention in the application.It should be appreciated that the drawings are not drawn to scale.Wherein:
Fig. 1 is a kind of copper interconnection structure schematic diagram in the prior art.
Fig. 2 and Fig. 3 is wafer bonding structural schematic diagram in the prior art.
Fig. 4 to fig. 6 is to form each step of first through hole in the embodiment of the present application in the forming method of wafer bonding structure Cross section structure schematic diagram.
Fig. 7 is that the forming method of wafer bonding structure described in the embodiment of the present application forms a kind of vertical view after the second opening Figure.
Fig. 7 A to attached drawing 7C is respectively the cross section structure schematic diagram along the direction AA, BB and CC of Fig. 7.
Fig. 8 is that the forming method of wafer bonding structure described in the embodiment of the present application forms another vertical view after the second opening Figure.
Fig. 9 is that the forming method of wafer bonding structure described in the embodiment of the present application forms another vertical view after the second opening Figure.
Figure 10 is that the forming method of wafer bonding structure described in the embodiment of the present application forms a kind of vertical view after first groove Figure.
Figure 10 A to attached drawing 10C is respectively the cross section structure schematic diagram along the direction AA, BB and CC of Figure 10.
Figure 11 is that the forming method of wafer bonding structure described in the embodiment of the present application forms one kind after metal interconnection structure Top view.
Figure 11 A to attached drawing 11C is respectively the cross section structure schematic diagram along the direction AA, BB and CC of Figure 11.
Specific embodiment
Following description provides the specific application scene of the application and requirements, it is therefore an objective to those skilled in the art be enable to make It makes and using the content in the application.To those skilled in the art, to the various partial modifications of the disclosed embodiments Be it will be apparent that and without departing from the spirit and scope of the disclosure, the General Principle that will can be defined here Applied to other embodiments and application.Therefore, the embodiment the present disclosure is not limited to shown in, but it is consistent most wide with claim Range.
Technical solution of the present invention is described in detail below with reference to embodiment and attached drawing.
The embodiment of the present application provides a kind of forming method of wafer bonding structure, comprising: the first wafer is provided, described the First medium layer is formed on one wafer；First through hole is formed in the first medium layer, the first through hole does not run through described First medium layer；The second exposure mask is formed on the first medium layer, second exposure mask has the second opening, wherein described Second opening exposes the first through hole and has partition pattern for defining in first groove and second opening, The son that second opening is separated at least two locally connecteds is open by the partition pattern；Etch the first medium layer shape At the first groove, and continue to etch the first through hole to exposing first wafer；Remove second exposure mask； Interconnection materials are filled on the first medium layer and in first groove and first through hole；Remove the first medium layer On interconnection materials, form metal interconnection structure in the first groove and first through hole.
With reference to shown in attached drawing 4, provide the first wafer 300, in the present embodiment, first wafer 100 include substrate (not Show), the substrate is silicon substrate, and in other embodiments, the substrate can also serve as a contrast for germanium silicon substrate or silicon-on-insulator Bottom either grows the silicon substrate etc. for having epitaxial layer.More than one semiconductor device can be formed in first wafer 300 Part and interconnection line, such as imaging sensor, reset transistor and processing circuit etc., for convenience, the application are implemented The attached drawing of example is not shown, and does not do any restrictions to this present invention.
With continued reference to attached drawing 4, described for forming first medium layer 301, in the present embodiment, institute on the first wafer 300 The material for stating first medium layer 301 is silica, and formation process is, for example, chemical vapor deposition process.In other embodiments, The first medium layer 301 can also be the composite layer including one layer or more dielectric layer.
With reference to shown in attached drawing 4 to attached drawing 6, the is formed in the first medium layer 301 to be provided by the embodiments of the present application The structural schematic diagram of each step of one through-hole 304, wherein the first through hole 304 does not run through the first medium layer 301.
With continued reference to attached drawing 4, the first exposure mask 302 is formed on the first medium layer 301, first exposure mask 302 has There is the first opening 303, first opening 303 is for defining first through hole 304.First exposure mask 302 is, for example, photoetching Glue-line forms first opening 303 by exposure development, and the position of first opening 303 and size define subsequent The positions and dimensions of the first through hole 304 of formation.Also, first exposure mask 302 is as etching 301 shape of first medium layer At the exposure mask of first through hole 304.
It is exposure mask with first exposure mask 302 with reference to shown in attached drawing 5, it is logical etches the formation of first medium layer 301 first Hole 304.In the embodiment of the present application, the technique for etching the first medium layer 301 is plasma dry etch process.Described One through-hole 304 is located in the first medium layer 301, however, the first through hole 304 does not run through the first medium layer 301, that is to say, that the bottom of the first through hole 304 is still in the first medium layer 301.
With reference to shown in attached drawing 6, first exposure mask 302 is removed.In the embodiment of the present application, the material of first exposure mask 302 Material is photoresist, and the technique for removing the first medium layer 301 is that wet process is removed photoresist or cineration technics.
With reference to shown in attached drawing 7 and attached drawing 7A, 7B and 7C, the second exposure mask is formed on the first medium layer 301 305, second exposure mask 305 has the second opening 306, wherein second opening 306 exposes the first through hole 304 And for defining there is partition pattern in first groove 307 and second opening 306, the partition pattern is by described the Two openings 306 are separated into the son opening of at least two locally connecteds.
In some embodiments of the present application, the cross-sectional area of the sub- opening is less than 1.5 μm of 1.5 μ m.Although this Application embodiment does excessive limitation to the shape of the described son opening, however the cross section of the sub- opening still preference rule Shape to form the optimization of the mask set of the sub- opening and subsequent bonding technology to facilitate.Some embodiments of the present application In, the cross sectional shape of the sub- opening is square or round or rectangle.In other embodiments of the application, institute At least two son openings stated are all identical square of shape and size or class square.
In the embodiment of the present application, second exposure mask 305 is, for example, photoresist layer, is formed by exposure development described Second opening 306, it is described second opening 306 position and size define the first groove 307 being subsequently formed position and Size.Also, second exposure mask 305 forms the exposure mask of first groove 307 as the first medium layer 301 is etched.
With reference to shown in attached drawing 7, for a kind of top view of second opening 306, wherein wrapped in second opening 306 Partition pattern is included, the son that second opening 306 is separated at least two locally connecteds is open by the partition pattern.
Wherein, the partition pattern can be the pattern of regular shape, be also possible to the pattern of irregular shape, this Shen Please embodiment do not do excessive limitation to the pattern form, can be according to the needs of technological design and production semiconductor device Part manufacture craft select.However, having well-regulated point in preferred second opening 306 of the embodiment of the present application Every pattern, second opening 306 is divided at least two regularly arranged sons and is open by the partition pattern, described In attached drawing 7, second opening 306 is divided into 4 shapes by the partition pattern, and size and all identical son of structure are opened Mouthful 306a, 306b, 306c, 306d, son the opening 306a, 306b, 306c, 306d locally connected.The locally connected Structure guarantees the electrical connection for the metal interconnection structure part being subsequently formed, to guarantee the electrical connectivity of the metal interconnection structure Energy.
As shown in Fig. 7, the partition pattern in second opening 306 is " ten " font, structure in the second exposure mask 305 Discontinuous at the part and other parts of " ten " herringbone pattern, this guarantees each height openings of second opening 306 306a, 306b, 306c, 306d locally connected.In other flexible embodiments of the application, constituted in the second exposure mask 305 It the part of " ten " herringbone pattern can also be continuous with other parts on one of direction of " ten " word.For example, setting " ten " herringbone pattern has four direction up and down, then described " ten " herringbone pattern can above it or lower section or It is connected on one direction of person left or right with the other parts of second exposure mask 305, such case still can guarantee The electrical connection for the metal interconnection structure various pieces being subsequently formed.
Due to including described " ten " herringbone pattern in second opening 306, in the different location of the opening, Its cross section structure schematic diagram is also different, and attached drawing 7A to attached drawing 7C is respectively that the cross section structure along the direction AA, BB and CC of Fig. 7 shows It is intended to.
As shown in Figure 7 A, for along the cross section structure schematic diagram in the direction AA of Fig. 7, second 306 positions of opening and institute The position for stating first through hole 304 is corresponding, and the opening portion size of second opening 306 is greater than the first through hole Each section of 304 size, the second opening 306 described in the direction AA is connected to completely.
As shown in Figure 7 B, for along the cross section structure schematic diagram in the direction BB of Fig. 7, wherein the one of described second opening 306 A sub- aperture position is corresponding with the position of the first through hole 304, however it is described second opening 306 in the direction BB by the separation Pattern is divided into disconnected two sub-regions, that is to say, that the sub- opening 306a, 306b are not connected in the direction BB, institute Stating design ensure that the bonding face for the metal interconnection structure being subsequently formed is separated into more than two surfaces, and this reduces institutes The surface area for carrying out bonded portion in metal interconnection structure on each bonding face is stated, is mutually linked so as to avoid in the metal The recess portion generated on the bonding face of structure is greater than design specification.
As seen in figure 7 c, for along the cross section structure schematic diagram in the direction CC of Fig. 7, the position of described second opening 306 with The position of the first through hole 304 does not correspond to, however second opening 306 is divided into not in the direction CC by the partition pattern Two sub-regions of connection.
In embodiments herein, the partition pattern in second opening 306 can also be other shapes, such as Shown in attached drawing 8, the partition pattern is " T " shape, and in attached drawing 8, " T " the shape partition pattern is open described second 306 are divided into 3 sub- opening 306e, 306f, 306g, the sub- opening 306e, 306f, 306g locally connected.That is, Part and the other parts that " T " shape pattern is constituted in second exposure mask 305 are discontinuous, and this guarantees second openings 306 each height is open 306e, 306f, 306g locally connected.In other flexible embodiments of the application, the second exposure mask The part that described " T " shape pattern is constituted in 305 can also be continuous with other parts on one of direction of " T " shape.
In embodiments herein, the partition pattern in second opening 306 can also be attached shown in Fig. 9 " One " font, it is equal or unequal that described second opening 306 is divided into surface area by " one " the font partition pattern Son opening 306h, 306i, wherein " one " the herringbone pattern part and the other parts of second exposure mask 305 are discontinuous.
Be exposure mask with second exposure mask 305 with reference to shown in attached drawing 10, etch the first medium layer 301 formed it is described First groove 307, since the second 306 positions of opening of second exposure mask 305 and the position of the first through hole 304 are corresponding simultaneously And size is greater than the size of the first through hole 304, therefore, this step will continue to etch the first through hole 304 to exposing First wafer 300.Attached drawing 10 is the first wafer 300 described after forming the first groove 307 and first through hole 304 Top view.Due to the presence of partition pattern in second exposure mask 305, the partition pattern is protected positioned at the separation First medium layer 301 under pattern, therefore there is also the separation figures being made of first medium layer in the first groove 307 Case.
Continue by taking " ten " font partition pattern as an example, the first groove 307 is divided into 4 shapes, size and Structure identical sub-trenches 307a, 307b, 307c, 307d, described sub-trenches 307a, 307b, 307c, 307d locally connect It is logical.Locally connected's structure guarantees the electrical connection for the metal interconnection structure part being subsequently formed, to guarantee that the metal is mutual Link the electrical connection properties of structure.
In the different location of the first groove 307, cross section structure schematic diagram is also different, and attached drawing 10A to attached drawing 10C points It Wei not be along the cross section structure schematic diagram in the direction AA, BB and CC of Figure 10.
As shown in Figure 10 A, for along the direction AA of Figure 10 cross section structure schematic diagram, the first groove 307 with it is described First through hole 304 is connected to, and the size of the first groove 307 is greater than the size of the first through hole 304, in the AA Each section of direction first groove 307 is connected to completely.
As shown in Figure 10 B, for along the cross section structure schematic diagram in the direction BB of Figure 10, first groove 307 separates in the direction BB For disconnected two sub-regions, one of subregion of the first groove 307 is connected to the first through hole 304, That is, the sub-trenches 307a, 307b is not connected in the direction BB, the design ensure that the metal interconnection being subsequently formed The bonding face of structure is separated into more than two surfaces, and this reduces on each bonding face in the metal interconnection structure The surface area of bonded portion is carried out, is greater than design so as to avoid the recess portion generated on the bonding face of the metal interconnection structure Specification.
As illustrated in figure 10 c, for along the cross section structure schematic diagram in the direction CC of Figure 10, the position of the first groove 307 It is not connected to the first through hole 304, and the first groove 307 is separated into disconnected two sub-districts in the direction CC Domain.
With reference to shown in attached drawing 11, second exposure mask 305 is removed；On the first medium layer 301 and first groove 307 and first through hole 304 in fill interconnection materials；The interconnection materials on the first medium layer 301 are removed, in institute It states and forms metal interconnection structure 308 in first groove 307 and first through hole 304.
The technique for removing second exposure mask 305 is, for example, cineration technics or wet process degumming process.Then, using chemistry Gas-phase deposition fills metal interconnection material on the first medium layer 301 and in first groove 307 and first through hole 304 Material, the interconnection materials are, for example, metallic copper or metallic aluminium or tungsten etc..Remove the first medium layer 301 On the technique of interconnection materials be, for example, chemical mechanical milling tech, first medium layer 301 is the chemical mechanical grinding The stop-layer of technique.
With reference to attached drawing 11, to form the top view after the metal interconnection structure 308 in some embodiments of the application.It is described Metal interconnection structure 308 4 shapes are separated by the first medium layer, size and all identical interest of structure belong to interconnection Structure 308a, 308b, 308c, 308d, the sub- metal interconnection structure 308a, 308b, 308c, 308d locally connected.It is described Locally connected's structure guarantee the electrical connection properties of the metal interconnection structure.
Wherein, attached drawing 11A to attached drawing 11C is respectively the cross section structure schematic diagram along the direction AA, BB and CC of Figure 11.Such as Shown in Figure 11 A, along the direction AA, the metal interconnection structure 308 is connected in the first wafer 300 by the first through hole Semiconductor devices and metal connecting line realize the electrical connection between multiple wafers when carrying out the bonding of multiple wafers.Together When, each sub- the metal interconnection structure 308a, 308b, 308c, 308d of the metal interconnection structure 308 are constituted in the direction AA Each section is connected to completely, realizes the electrical connection between each sub- metal interconnection structure.It is straight between this seed metal interconnection structure The bonding structure for connecing electrical connection has saved the making step of bonding structure, has simplified technique.This is because, if by described each Partition (not being electrically connected directly), subsequent between a sub- metal interconnection structure, also needs to make one layer of metal connecting line, will be described Each sub- metal interconnection structure connects, to realize the bonding between multiple wafers.
As shown in Figure 11 B, for along the cross section structure schematic diagram in the direction BB of Figure 11, the metal interconnection structure 308 is in BB Direction is divided into disconnected two sub- metal interconnection structures, and the surface area of the sub- metal interconnection structure is less than 1.5 μ ms 1.5μm.In the case where the density of the metal interconnection structure is constant, since the surface area of the sub- metal interconnection structure is small In 1.5 μm of 1.5 μ m, therefore, even if there is dish-shaped recess portion in the surface of the sub- metal interconnection structure, the dish-shaped recess portion Size is again smaller than design requirement, thus guarantee the switching performance of the bonding face of the metal interconnection structure, what guarantee was bonded The electrical property between bonding effect and device between multiple wafers.
As shown in Figure 11 C, for along the cross section structure schematic diagram in the direction CC of Figure 11, the metal interconnection structure 308 is divided It is divided into disconnected two sub- metal interconnection structures.The surface area of sub- metal interconnection structure as described in the direction CC is much smaller than 1.5 1.5 μm of μ ms, therefore be not in that bonding face butterfly recess portion is greater than lacking for design specification when carrying out multiple wafer bondings It falls into.
The embodiment of the present application also provides a kind of wafer bonding structure, with reference to shown in attached drawing 11 and attached drawing 11A to 11C, packet It includes: the first wafer 300；First medium layer 301 is located on first wafer 300；Metal interconnection structure 308 is located at described the 301 in one dielectric layer, and the metal interconnection structure 308 is divided into the sub- metal interconnection structure of at least two locally connecteds.
The sub- metal interconnection structure may include 2 perhaps 3 or 4, according to the needs of technological design, originally Application embodiment does not limit it excessively.Even, several metal interconnection structures are contained in the first medium layer 301 When, the sub- metal interconnection structure number for including in the different metal interconnection structure may be the same or different.
It is only a kind of situation of the embodiment of the present application shown in attached drawing 11 and attached drawing 11A to 11C, the metal interconnection Structure 308 is separated into 4 shapes, size and all identical sub- metal interconnection structure 308a of structure by the first medium layer, 308b, 308c, 308d, the sub- metal interconnection structure 308a, 308b, 308c, 308d locally connected.The locally connected Structure guarantees the electrical connection properties of the metal interconnection structure.Sub- the metal interconnection structure 308a, 308b, 308c, 308d Cross-sectional shape can be circle or rectangle or square.The application is to for separating the metal interconnection structure The size of part first medium layer do not do excessive limitation, do not influence the electrical connection properties of the metal interconnection structure.
In other embodiments of the application, the metal interconnection structure 308 can also be by the first medium layer It is separated into the sub- metal interconnection structure of two or three locally connecteds.Preferably, described two or three locally connecteds Sub- metal interconnection structure be shape and the identical rectangle of surface area, round or square.
In embodiments herein, the cross-sectional area of the sub- metal interconnection structure is less than 1.5 μ m, 1.5 μ m.When two or more metal interconnection structures described in the embodiment of the present application are bonded, mutually link in the metal In the case that the density of structure is constant, since the cross-sectional area of the sub- metal interconnection structure is less than 1.5 μm of 1.5 μ m, because This, even if the surface of the sub- metal interconnection structure has dish-shaped recess portion, the size of the dish-shaped recess portion is wanted again smaller than design It asks, to guarantee the switching performance of the bonding face of the metal interconnection structure, guarantees the key between the multiple wafers being bonded Close the electrical property between effect and device.
In conclusion after reading this detailed disclosures, it will be understood by those skilled in the art that aforementioned detailed disclosure Content can be only presented in an illustrative manner, and can not be restrictive.Although not explicitly described or shown herein, this field skill Art personnel are understood that improve and modify it is intended to include the various reasonable changes to embodiment.These change, improve and It modifies and is intended to be proposed by the disclosure, and in the spirit and scope of the exemplary embodiment of the disclosure.
It should be appreciated that the term "and/or" that the present embodiment uses includes associated listing one or more of project It is any or all combination.It should be appreciated that when an element is referred to as being "connected" or "coupled" to another element, it can be with It is directly connected or is coupled to another element, or there may also be intermediary elements.
Similarly, it should be understood that when the element of such as layer, region or substrate etc is referred to as in another element "upper" When, it can directly on the other element, or there may also be intermediary elements.In contrast, term " directly " indicates There is no intermediary element.It is also understood that term "comprising", " including ", " comprising " and/or " including ", herein in use, referring to Bright there are documented feature, entirety, step, operation, element and/or component, but presence or one or more additional is not precluded Other a features, entirety, step, operation, element, component and/or their group.
It is also understood that although term first, second, third, etc. can be used herein to describe various elements, these Element should not be limited by these terms.These terms are only used to distinguish an element with another element.Therefore, exist In the case where not being detached from the teachings of the present invention, first element in some embodiments can be referred to as in other embodiments Second element.Identical reference label or identical reference designator indicate identical element throughout the specification.
In addition, by reference to as Utopian graphical representation of exemplary cross sectional view and/or plane diagram example is described Property embodiment.Therefore, because with the shape illustrated not being both foreseeable caused by such as manufacturing technology and/or tolerance.Cause Exemplary embodiment, should not be interpreted as being limited to the shape in region out shown here, but should include by for example making by this The deviation in shape caused by making.For example, the etching area for being shown as rectangle would generally have circular or curved spy Sign.Therefore, region shown in figure is substantially schematical, and shape is not configured to show the practical shape in the region of device Shape is also not to limit the range of exemplary embodiment.

Claims (10)

1. a kind of forming method of wafer bonding structure, comprising:
First wafer is provided, forms first medium layer on first wafer；
First through hole is formed in the first medium layer, the first through hole does not run through the first medium layer；
The second exposure mask is formed on the first medium layer, second exposure mask has the second opening, wherein second opening It exposes the first through hole and there is partition pattern, the separation for defining in first groove and second opening The son that second opening is separated at least two locally connecteds is open by pattern；
It etches the first medium layer and forms the first groove, and continue to etch the first through hole to exposing described One wafer；
Remove second exposure mask；
Metal interconnection structure is formed in the first groove and first through hole.
2. the forming method of wafer bonding structure as described in claim 1, which is characterized in that the shape in the first medium layer Include: at the method for first through hole
The first exposure mask is formed on the first medium layer, first exposure mask has the first opening, and first opening is used for Define first through hole；
It etches the first medium layer and forms first through hole；
Remove first exposure mask.
3. the forming method of wafer bonding structure as described in claim 1, which is characterized in that in the first groove and first The method of formation metal interconnection structure includes: in through-hole
Interconnection materials are filled on the first medium layer and in first groove and first through hole；
The interconnection materials on the first medium layer are removed, form metal interconnection in the first groove and first through hole Structure.
4. the forming method of wafer bonding structure as described in claim 1, which is characterized in that the cross section face of the sub- opening Product is less than 1.5 μm of 1.5 μ m.
5. the forming method of wafer bonding structure as described in claim 1, which is characterized in that the cross section of the sub- opening is Square or round or rectangle.
6. the forming method of wafer bonding structure as described in claim 1, which is characterized in that the quantity of the sub- opening is 4 It is a, and the shape of 4 sons opening and size are identical.
7. a kind of wafer bonding structure, comprising:
First wafer；
First medium layer is located on first wafer；
Metal interconnection structure is located in the first medium layer, and the metal interconnection structure is divided at least two parts The sub- metal interconnection structure of connection.
8. wafer bonding structure as claimed in claim 7, which is characterized in that the cross-sectional area of the sub- metal interconnection structure Less than 1.5 μm of 1.5 μ m.
9. wafer bonding structure as claimed in claim 7, which is characterized in that the cross section of the sub- metal interconnection structure is positive Rectangular or round or rectangle.
10. wafer bonding structure as claimed in claim 7, which is characterized in that the quantity of the sub- metal interconnection structure is 4 It is a, and the shape of 4 sub- metal interconnection structures and size are identical.
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CN109390305A (en) * 2018-10-22 2019-02-26 长江存储科技有限责任公司 A kind of bonded wafer and preparation method thereof

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