CN118712106A - A wafer bonding system and thermocompression bonding, direct bonding and anodic bonding methods - Google Patents

Abstract

The present invention relates to a wafer bonding system and a method for hot compression bonding, direct bonding and anodic bonding, and belongs to the technical field of semiconductor devices. The wafer bonding system includes a first bonding module, a second bonding module, a transfer channel, a wafer loading and unloading area, a pre-positioning module, a cooling module, a plasma activation module and a cleaning module. Not only can it simultaneously support wafer hot compression bonding, plasma activated direct bonding and anodic bonding processes, but its layout design greatly saves space resources and is convenient for flexible adjustment according to production needs; by adopting a single handling robot to move back and forth along a linear guide in the transfer channel, efficient wafer handling is achieved, reducing equipment costs and energy consumption and manpower investment during operation; at the same time, the wafer loading and unloading area can centrally manage the upper wafer, the lower wafer and the bonded wafer, which not only simplifies the operation process, but also greatly reduces management costs.

Description

A wafer bonding system and thermocompression bonding, direct bonding and anodic bonding methods

Technical Field

The invention relates to a wafer bonding system and a thermal compression bonding, direct bonding and anodic bonding method, belonging to the technical field of semiconductor devices.

Background Art

In the field of semiconductor manufacturing, the precise matching and efficient flow of wafers and chucks are important foundations for large-scale automated production. Although the existing bonding equipment layout has achieved full-process automation of wafers from cleaning, pre-positioning to bonding and cooling to a certain extent, there are still some significant limitations in its design and implementation, which are specifically reflected in the following aspects:

(1) In the traditional layout, each functional module (such as positioning, cleaning, pre-positioning, bonding, cooling, etc.) is relatively independent and scattered, resulting in a large overall footprint of the equipment and low space utilization. At the same time, this layout is difficult to flexibly adjust according to production needs, which not only limits the expansion capacity of the production line, but also makes it difficult to adjust the layout and incurs high costs.

(2) Wafer handling and chuck handling are performed by different robots, which not only increases the cost of robot purchase and maintenance, but also leads to waste of resources (such as robot working time, energy, etc.).

(3) In this layout, the wafer is first positioned by a chuck outside the chamber, and then the chuck and the wafer are moved into the chamber for subsequent operations such as bonding. In this process, the multiple handling and movement of the chuck not only increases the complexity of the mechanical linkage between the equipment, but also introduces the risk of reduced positioning accuracy and deviation due to mechanical vibration, wear or accumulation of positioning errors, which directly affects the yield of the final product.

(4) Since a large number of chucks are required for wafer loading and positioning, the manufacturing cost of the chucks is high. Moreover, as the number of uses increases, problems such as wear and deformation of the chucks gradually emerge, requiring regular maintenance or replacement, further increasing operating costs.

Therefore, the development of a wafer bonding system and thermocompression bonding, direct bonding and anodic bonding methods is of great significance to promoting the continued progress of the semiconductor manufacturing industry.

The above information disclosed in this Background section is only for understanding the background of the present inventive concept and therefore it may contain information that does not constitute prior art.

Summary of the invention

The purpose of the present invention is to provide a new technical solution to improve or solve the technical problems existing in the prior art as described above.

The technical solution provided by the present invention is as follows: a wafer bonding system, comprising a first bonding module, a second bonding module, a transfer channel, a wafer loading and unloading area, a pre-positioning module, a cooling module, a plasma activation module and a cleaning module, wherein the wafer loading and unloading area, the pre-positioning module, the cooling module, the plasma activation module and the cleaning module are arranged side by side on one side of the transfer channel, and the first bonding module and the second bonding module are arranged side by side on the other side of the transfer channel;

The first bonding module and the second bonding module are both provided with bonding equipment;

A linear guide is provided in the transfer channel, a handling robot is provided on the linear guide, and the handling robot can reciprocate along the linear guide to realize the transfer of wafers;

The wafer loading and unloading area is used for loading and unloading wafers and storing finished bonding products;

The pre-positioning module is used to preliminarily correct the direction of the wafer, reduce the deviation caused by position changes during transportation, and ensure that the wafer can be accurately docked in the subsequent bonding process;

The cooling module is used to control the temperature of the wafer during or after wafer bonding, so that the wafer reaches room temperature for subsequent production processes;

The plasma activation module is used to perform plasma activation treatment on the surface of the wafer;

The cleaning module is used to clean the surface of the wafer.

Compared with the prior art, the technical solution provided by the present invention has the following beneficial effects: the wafer bonding system of the present invention not only supports a variety of processes such as wafer hot compression bonding, plasma activated direct bonding and anodic bonding, but also its compact layout design greatly saves space resources, and is convenient for flexible adjustment according to production needs; by adopting a single handling robot to move back and forth along a linear guide in a transfer channel, efficient wafer handling is achieved, and equipment costs and energy consumption and manpower investment in the operation process are reduced; while improving the wafer alignment accuracy, the wafer loading and unloading area can centrally manage the upper wafer, lower wafer and bonded wafer, which not only simplifies the operation process, but also greatly reduces management costs.

Based on the above technical solution, the present invention can also be improved as follows.

Furthermore, the wafer loading and unloading area includes an upper wafer storage module, a lower wafer storage module and a bonding finished product storage module.

The above further beneficial effects are as follows: by classifying and storing wafers according to different states (upper wafer, lower wafer, bonded finished product), each module operates independently without interfering with each other, ensuring the smooth flow of wafers from storage to delivery and then to final finished product storage, thereby improving overall production efficiency.

Furthermore, the pre-positioning module includes a positioning device and a detection device, the positioning device is used to preliminarily position the wafer, and the detection device is used to detect the direction and position deviation of the wafer, and adjust the positioning device according to the detection result to correct the direction and position of the wafer.

The above further beneficial effects: before wafer bonding, pre-positioning is a crucial step, because when the wafer is taken out of the wafer box and transported, the position and direction may change due to the moving gap in the box, and the bonding process itself has extremely high requirements for the position accuracy of the wafer. Therefore, it is necessary to pre-position the wafer first. The main purpose of pre-positioning is to confirm the direction of the wafer and ensure that the deviation in direction can be minimized when it enters the subsequent processing station. Doing so can greatly improve the accuracy and efficiency of subsequent processes. After completing the pre-positioning, the wafer will undergo surface treatment, cleaning and other steps in sequence. When the wafer enters the bonding chamber, it will be more accurately positioned. The positioning operation range of the wafer when entering the bonding chamber is relatively small, because the approximate direction and position of the wafer have been ensured by pre-positioning at this time, and only fine-tuning is required to achieve the best bonding position. Therefore, through the pre-positioning module, the accuracy and reliability of wafer bonding can be ensured, the yield rate can be improved and the production cost can be reduced.

Furthermore, the bonding equipment includes a first camera, a second camera, an adjustment robot, a pressure head and a positioning chuck mechanism. The pressure head is connected to a driving device and rises and falls under the action of the driving device. The pressure head is used to apply a bonding force to the wafer. The positioning chuck mechanism is located below the pressure head. The positioning chuck mechanism is used to position and clamp the wafer to be bonded. The first camera is used to take a picture of the reference point of the lower wafer on the positioning chuck mechanism and record the coordinate position of the reference point. The adjustment robot is located on one side of the positioning chuck mechanism. The adjustment robot adjusts the position of the upper wafer and transports it to the positioning chuck mechanism. The second camera is located on the transport path of the adjustment robot. The second camera is used to take a picture of the reference point of the upper wafer on the adjustment robot and record the coordinate position of the reference point.

The above further beneficial effects are as follows: the first camera and the second camera work together to achieve accurate photography and coordinate recording of the wafer before bonding, ensuring accurate alignment of the wafer during the bonding process, and adjusting the manipulator so that the position of the upper wafer can be flexibly adjusted to meet the precise alignment requirements with the lower wafer. In addition, the present invention directly integrates the positioning chuck mechanism into the bonding equipment, changing the cumbersome transportation steps in the traditional wafer bonding process. The built-in positioning chuck mechanism not only reduces the errors and wafer damage that may occur during the transportation process, but also simplifies the operation process and improves production efficiency.

Furthermore, the positioning chuck mechanism includes a tray, a plurality of spacers and a plurality of clamping devices, the spacers and the clamping devices are arranged along the circumference of the tray, the spacers can move radially along the tray, the clamping devices are used to press two or more wafers, and the spacers are used to support the upper wafer before bonding so that the upper wafer and the lower wafer do not contact.

The above further beneficial effects are as follows: by setting a spacer, the upper wafer can be effectively supported before bonding, ensuring that the upper wafer and the lower wafer do not contact before bonding, thereby effectively avoiding damage or contamination that may be caused by direct contact; at the same time, the spacer can flexibly move along the radial direction of the tray, and can be withdrawn before the lower wafer is placed, or moved above the lower wafer after the lower wafer is in place, and after the upper wafer is placed, it can move radially outward before the bonding front and withdraw, ensuring the smooth progress of the bonding process; in addition, multiple clamping devices are arranged along the circumference of the tray, which can firmly clamp the wafer and effectively prevent movement or offset during the bonding process; the positioning chuck mechanism can accurately position and clamp the wafer, significantly reducing bonding failures caused by inaccurate positioning or unstable clamping, thereby effectively improving production efficiency.

The present invention also discloses a wafer thermal compression bonding method, comprising the wafer bonding system as described above, and the bonding method comprises the following steps:

H1. Lower wafer pre-positioning: The handling robot in the transfer channel picks up the lower wafer from the wafer loading and unloading area and places it in the pre-positioning module for wafer direction calibration;

H2. Place the lower wafer into the first bonding module: The calibrated lower wafer is placed into the first bonding module by the handling robot, and the lower wafer is positioned in the first bonding module;

H3, upper wafer pre-positioning: The handling robot in the transfer channel picks up the upper wafer from the wafer loading and unloading area again and places it in the pre-positioning module for wafer direction calibration;

H4, placing the upper wafer into the first bonding module: the calibrated upper wafer is placed into the first bonding module by the handling robot in the transfer channel;

H5, upper wafer positioning and bonding: the upper wafer is positioned and thermally pressed and bonded in the first bonding module. During the thermally pressed bonding process, the bonding chamber is evacuated;

H6. Cooling of finished bonding products: The handling robot in the transfer channel takes out the finished bonding products from the first bonding module and puts them into the cooling module for cooling;

H7. Finished products are transferred to the wafer loading and unloading area: The cooled finished products are taken from the cooling module by the handling robot in the transfer channel and stored in the wafer loading and unloading area.

Compared with the prior art, the technical solution provided by the present invention has the following beneficial effects: the wafer hot-compression bonding method provided by the present invention realizes a fully automated process from wafer pre-positioning, handling, bonding to cooling and storage through an integrated wafer bonding system. This method not only significantly improves production efficiency and reduces errors caused by manual operation, but also ensures high quality and stability of wafer bonding through precise positioning and hot-compression bonding in a vacuum environment. At the same time, the compact system layout and flexible handling robot design reduce production costs and occupied space.

The present invention also discloses a wafer direct bonding method, including the wafer bonding system, and the bonding method includes the following steps:

D1. Lower wafer pre-positioning: The handling robot in the transfer channel picks up the lower wafer from the wafer loading and unloading area and places it in the pre-positioning module for wafer direction calibration;

D2. Activation treatment of lower wafer surface: The lower wafer is placed into the plasma activation module by the handling robot for wafer surface activation treatment;

D3. Lower wafer cleaning: The handling robot places the lower wafer that has undergone surface activation treatment into the cleaning module for wafer cleaning;

D4. Place the lower wafer into the second bonding module: The handling robot places the cleaned lower wafer into the second bonding module and positions the lower wafer in the second bonding module;

D5. Upper wafer pre-positioning: The handling robot picks up the upper wafer from the wafer loading and unloading area and places it in the pre-positioning module for wafer direction calibration;

D6. Activation treatment of upper wafer surface: The upper wafer is placed into the plasma activation module by the handling robot for wafer surface activation treatment;

D7. Upper wafer cleaning: The handling robot places the upper wafer that has undergone surface activation treatment into the cleaning module for wafer cleaning;

D8. Place the upper wafer into the second bonding module: The handling robot places the cleaned upper wafer into the second bonding module;

D9. Positioning and bonding the upper wafer in the second bonding module: Positioning the upper wafer in the second bonding module and directly bonding it with the lower wafer, and evacuating the bonding chamber;

D10. Take out the finished bonding product: The handling robot takes out the finished bonding product from the second bonding module and places it in the wafer loading and unloading area.

Compared with the prior art, the technical solution provided by the present invention has the following beneficial effects: the wafer direct bonding method provided by the present invention realizes the full process automation from wafer pre-positioning, surface activation, cleaning to direct bonding through the integrated operation of the wafer bonding system. The method significantly improves the accuracy and stability of wafer bonding through precise pre-positioning, efficient plasma activation treatment, thorough cleaning and direct bonding under a vacuum environment. At the same time, the compact layout of the system and the efficient handling robot design reduce production costs and floor space.

Furthermore, in step D3, the handling robot places the lower wafer that has undergone surface activation treatment into the first cleaning device in the cleaning module for wafer cleaning; in step D7, the handling robot places the upper wafer that has undergone surface activation treatment into the second cleaning device in the cleaning module for wafer cleaning.

The present invention also discloses a wafer anodic bonding method, including the wafer bonding system, and the bonding method includes the following steps:

S1. Pre-positioning of lower wafer: The handling robot takes the wafer from the wafer loading and unloading area and places it on the pre-positioning module for wafer direction calibration.

S2, lower wafer surface treatment: the lower wafer is sent into the plasma activation module by the handling robot for surface activation treatment;

S3, lower wafer cleaning: the handling robot sends the lower wafer after surface treatment into the cleaning module for cleaning;

S4, the lower wafer enters the anodic bonding module: the lower wafer is placed into the second bonding module by the handling robot, and the lower wafer is positioned in the second bonding module;

S5, upper wafer pre-positioning: the handling robot takes the upper wafer from the wafer loading and unloading area and places it in the pre-positioning module for wafer direction calibration;

S6. Surface treatment of upper wafer: The upper wafer is sent into the plasma activation module by the handling robot for surface activation treatment;

S7, upper wafer cleaning: the handling robot sends the surface-treated upper wafer into the cleaning module for cleaning;

S8, the upper wafer enters the anodic bonding module: the upper wafer is placed into the second bonding module by the handling robot;

S9, positioning the upper wafer and applying an electric field, in the second bonding module, positioning the upper wafer, generating an electric field by applying a voltage, and evacuating the bonding chamber to obtain a semi-finished wafer;

S10, a second step of transporting the semi-finished wafer to the first bonding module for anodic bonding: the transport robot transports the semi-finished wafer to the first bonding module for thermocompression bonding;

S11, cooling the bonded product: the transport robot transports the bonded product to the cooling module for cooling;

S12. Taking out the bonded product: The handling robot takes out the bonded product from the cooling module and places it in the wafer loading and unloading area.

Compared with the prior art, the technical solution provided by the present invention has the following beneficial effects: the wafer anodic bonding method provided by the present invention realizes the automation and precise control of the whole process from wafer pre-positioning, surface treatment, cleaning to anodic bonding through an integrated wafer bonding system. The method combines the electric field effect with the thermocompression bonding technology. First, an electric field is generated by applying a voltage to promote the formation of molecular bonds between wafers, and then thermocompression bonding is performed to enhance the bonding strength, thereby ensuring the high quality and stability of the wafer anodic bonding. In addition, the compact layout of the system and the efficient handling robot design not only improve production efficiency, but also reduce production costs.

Furthermore, in step S3, the handling robot places the lower wafer that has undergone surface activation treatment into the first cleaning device in the cleaning module for wafer cleaning; in step S7, the handling robot places the upper wafer that has undergone surface activation treatment into the second cleaning device in the cleaning module for wafer cleaning.

The beneficial effect of adopting the above further scheme is that, through the parallel processing of the dual cleaning equipment, two wafers can be cleaned at the same time, thereby shortening the overall cleaning time and improving the efficiency of the wafer bonding process.

BRIEF DESCRIPTION OF THE DRAWINGS

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings in the following description are only embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying creative work.

FIG1 is a schematic diagram of the layout structure of an existing bonding device;

FIG2 is a route diagram of a handling robot when the wafer bonding system of the present invention is used for wafer thermal compression bonding;

FIG3 is a flow chart of a wafer thermal compression bonding method according to the present invention;

FIG4 is a route diagram of a handling robot when the wafer bonding system of the present invention is used for plasma activated direct bonding;

FIG5 is a flow chart of a wafer direct bonding method of the present invention;

FIG6 is a route diagram of a handling robot when the wafer bonding system of the present invention is used for anodic bonding;

FIG7 is a flow chart of a wafer anodic bonding method according to the present invention;

FIG8 is a schematic structural diagram of a bonding device of the present invention;

FIG9 is a schematic structural diagram of a positioning chuck mechanism of the present invention;

FIG10 is a schematic diagram of the structure of placing the lower wafer on the tray of the present invention;

FIG11 is a schematic diagram of a structure in which an upper wafer is placed on a spacer of the present invention;

FIG12 is a schematic structural diagram of the clamping device of the present invention clamping the upper and lower wafers;

In the figure, 100, the first bonding module; 200, the second bonding module; 300, the transfer channel; 310, the handling robot; 400, the wafer loading and unloading area; 410, the upper wafer storage module; 420, the lower wafer storage module; 430, the bonding finished product storage module; 500, the pre-positioning module; 600, the cooling module; 700, the plasma activation module; 800, the cleaning module; 810, the first cleaning equipment; 820, the second cleaning equipment; 900, the bonding equipment; 910, the first camera; 920, the second camera; 930, the adjustment robot; 940, the pressure head; 950, the positioning chuck mechanism; 951, the tray; 952, the spacer; 953, the clamping device.

DETAILED DESCRIPTION

The principles and features of the present invention are described below in conjunction with examples. The examples are only used to explain the present invention and are not used to limit the scope of the present invention.

As shown in Figure 1, this is an existing bonding equipment layout method. Two robots and multiple functional modules work together to complete the wafer process from cleaning, positioning to bonding and separation. Specifically, the following steps are included: First, the second robot grabs the chuck from the chuck storage area and places it on the positioning module, and the positioning module then calibrates the position of the chuck; after positioning, the positioning module carries the chuck and moves it to the next work area to prepare for the placement of the wafer; the first robot takes out the wafer to be processed from the wafer storage area and sends it to the cleaning module for surface cleaning; then, the first robot takes out the wafer from the cleaning module and sends it to the pre-positioning module for pre-positioning to ensure that the wafer can be accurately installed on the chuck in the predetermined direction; the first robot places the pre-positioned wafer on the chuck and completes the installation of the wafer and chuck on the positioning module. For a double-layer wafer structure, the relevant steps are repeated as needed. Next, the product with the wafer and chuck installed and positioned is moved to the grasping range of the second robot and sent into the chamber for bonding. After bonding is completed, the second robot grabs the bonded product and sends it to the cooling area for cooling; the second robot then transports the product to the chuck disassembly area to separate the chuck and the wafer; the separated wafer is moved to the grasping range of the first robot; the first robot grabs the finished product and places it in the wafer loading and unloading area for subsequent processing or packaging, and the second robot puts the chuck back into the chuck storage area for next use.

As shown in FIGS. 2 to 7 , a wafer bonding system provided by the present invention includes a first bonding module 100, a second bonding module 200, a transfer channel 300, a wafer loading and unloading area 400, a pre-positioning module 500, a cooling module 600, a plasma activation module 700 and a cleaning module 800. The first bonding module 100 and the second bonding module 200 are both provided with bonding devices 900. The bonding devices 900 in the first bonding module 100 and the second bonding module 200 can be configured to have different The first bonding module 100 is provided with a bonding device 900 with a function, such as a direct bonding device 900, a thermal compression bonding device 900 or an anodic bonding device 900. In this embodiment, the first bonding module 100 is provided with a thermal compression bonding device 900, which can perform wafer bonding and positioning, and has heating and pressing functions, and can set the bonding temperature and pressure; the second bonding module 200 is a direct bonding device 900, which can realize the electric field bonding function generated by applying voltage in anodic bonding, and can also realize the plasma activation bonding function ; A linear guide is provided in the transfer channel 300, and a handling robot 310 is provided on the linear guide. The handling robot 310 can move back and forth along the linear guide to realize the transfer of wafers; the wafer loading and unloading area 400 is used for loading and unloading wafers and storing finished bonding products; the pre-positioning module 500 is used to preliminarily correct the direction of the wafer, reduce the deviation caused by the position change during the transportation process, and ensure that the wafer can be accurately docked in the subsequent bonding process; the cooling module 600 is used to control the temperature of the wafer during or after the wafer bonding process, so that the wafer becomes room temperature for subsequent production processes; the plasma activation module 700 is used to perform plasma activation treatment on the surface of the wafer; the wafer loading and unloading area 400, the pre-positioning module 500, the cooling module 600, the plasma activation module 700 and the cleaning module 800 are arranged side by side on one side of the transfer channel 300, and the first bonding module 100 and the second bonding module 200 are arranged side by side on the other side of the transfer channel 300.

The wafer loading and unloading area 400 includes an upper wafer storage module 410 , a lower wafer storage module 420 and a finished bonding product storage module 430 .

The pre-positioning module 500 includes a positioning device and a detection device. The positioning device is used to preliminarily position the wafer. The detection device is used to detect the direction and position deviation of the wafer and adjust the positioning device according to the detection result to correct the direction and position of the wafer.

The cleaning module 800 is provided with a first cleaning device 810 and a second cleaning device 820 .

As shown in Figure 8, the bonding equipment 900 includes a first camera 910, a second camera 920, an adjustment robot 930, a pressure head 940 and a positioning chuck mechanism 950. The pressure head 940 is connected to a driving device and rises and falls under the action of the driving device. The pressure head 940 is used to apply a bonding force to the wafer. The positioning chuck mechanism 950 is located below the pressure head 940. The positioning chuck mechanism 950 is used to position and clamp the wafer to be bonded. The first camera 910 is used to take a picture of the reference point of the lower wafer on the positioning chuck mechanism 950 and record the coordinate position of the reference point. The adjustment robot 930 is located on one side of the positioning chuck mechanism 950. The adjustment robot 930 adjusts the position of the upper wafer and transports it to the positioning chuck mechanism 950. The second camera 920 is located on the conveying path of the adjustment robot 930. The second camera 920 is used to take a picture of the reference point of the upper wafer on the adjustment robot 930 and record the coordinate position of the reference point. The bonding device 900 of the present invention utilizes the first camera 910 and the second camera 920 to work together to achieve accurate photography and coordinate recording of the wafer before bonding, ensuring that the wafer is accurately aligned during the bonding process. The robot 930 is adjusted so that the position of the upper wafer can be flexibly adjusted to meet the precise alignment requirements with the lower wafer. In addition, the present invention directly integrates the positioning chuck mechanism 950 into the bonding device 900, which changes the cumbersome transportation steps in the traditional wafer bonding process. The built-in positioning chuck mechanism 950 not only reduces the errors and wafer damage that may occur during the transportation process, but also simplifies the operation process and improves production efficiency.

As shown in Figure 9, the positioning chuck mechanism 950 includes a tray 951, a plurality of spacers 952 and a plurality of clamping devices 953. The spacers 952 and the clamping devices 953 are arranged along the circumference of the tray 951. The spacers 952 can move radially along the tray 951. The clamping devices 953 are used to press two or more wafers. The spacers 952 are used to support the upper wafer before bonding so that the upper wafer and the lower wafer are not in contact.

As shown in FIG. 2 , FIG. 3 and FIG. 10 to FIG. 12 , a wafer thermal compression bonding method, the wafer bonding system, and the bonding method include the following steps:

H1. Lower wafer pre-positioning: The handling robot 310 in the transfer channel 300 picks up the lower wafer from the wafer loading and unloading area 400 and places it in the pre-positioning module 500 for wafer direction calibration;

H2. Place the lower wafer into the first bonding module 100: The calibrated lower wafer is placed into the first bonding module 100 by the transport robot 310, and the lower wafer is positioned in the first bonding module 100;

More specifically, the lower wafer is loaded onto the tray 951 of the positioning chuck mechanism 950 by the handling robot 310, the control system controls the moving device to drive the first camera 910 to move to a specified position, the first camera 910 takes a picture of the first reference point on the lower wafer and records the coordinate position of the first reference point, and the moving device drives the first camera 910 to return to the initial position;

H3. Upper wafer pre-positioning: The handling robot 310 in the transfer channel 300 picks up the upper wafer from the wafer loading and unloading area 400 again, and places it in the pre-positioning module 500 for wafer direction calibration;

H4, placing the upper wafer into the first bonding module 100: the calibrated upper wafer is placed into the first bonding module 100 by the transport robot 310 in the transfer channel 300;

Before the upper wafer is placed on the bonding device 900 in the first bonding module 100, the spacer 952 on the bonding device 900 in the first bonding module 100 is first extended, and the handling robot 310 places the upper wafer on the spacer 952;

H5. Positioning and bonding the upper wafer: Positioning the upper wafer and thermally pressing the upper wafer and the lower wafer in the first bonding module 100. During the thermal pressing bonding process, the bonding chamber is evacuated.

H51. Positioning: The adjusting robot 930 on the bonding device 900 absorbs the upper wafer on the spacer 952 through a suction cup, and moves the upper wafer to the second camera 920. The second camera 920 takes a picture of the second reference point on the upper wafer and records the coordinate position of the second reference point. The control system calculates the relative position of the first reference point and the second reference point according to the coordinate position of the first reference point and the coordinate position of the second reference point, and controls the adjusting robot 930 to adjust the orientation of the upper wafer according to the relative position, so as to align the second reference point of the upper wafer with the first reference point of the lower wafer. The clamping device 953 in the bonding device 900 presses the aligned lower wafer and the upper wafer.

H52. Thermal compression bonding: The pressing head 940 is driven by a driving device to press the lower wafer and the upper wafer together.

H6. Cooling of finished bonding products: The handling robot 310 in the transfer channel 300 takes out the finished bonding products from the first bonding module 100 and puts them into the cooling module 600 for cooling;

H7. The finished products are transferred to the wafer loading and unloading area 400: The cooled finished products are taken from the cooling module 600 by the transport robot 310 in the transfer channel 300 and stored in the wafer loading and unloading area 400.

As shown in FIG. 4 , FIG. 5 and FIG. 10 to FIG. 12 , a wafer direct bonding method includes the wafer bonding system, and the bonding method includes the following steps:

D1. Lower wafer pre-positioning: The handling robot 310 in the transfer channel 300 picks up the lower wafer from the wafer loading and unloading area 400 and places it in the pre-positioning module 500 for wafer direction calibration;

D2. Activation treatment of the lower wafer surface: The lower wafer is placed into the plasma activation module 700 by the transfer robot 310 for wafer surface activation treatment;

D3. Lower wafer cleaning: the transport robot 310 places the lower wafer after the surface activation treatment into the cleaning module 800 for wafer cleaning; the transport robot 310 places the lower wafer after the surface activation treatment into the first cleaning device 810 in the cleaning module 800 for wafer cleaning.

D4. Put the lower wafer into the second bonding module 200: The handling robot 310 puts the cleaned lower wafer into the second bonding module 200, and accurately positions the lower wafer in the second bonding module 200;

More specifically, the lower wafer is placed on the tray 951 of the positioning chuck mechanism 950 by the handling robot 310, the control system controls the moving device to drive the first camera 910 to move to a specified position, the first camera 910 takes a picture of the first reference point on the lower wafer and records the coordinate position of the first reference point, and the moving device drives the first camera 910 to return to the initial position;

D5. Upper wafer pre-positioning: The handling robot 310 picks up the upper wafer from the wafer loading and unloading area 400 and places it in the pre-positioning module 500 for wafer direction calibration;

D6. Activation treatment of the upper wafer surface: The upper wafer is placed into the plasma activation module 700 by the transfer robot 310 for wafer surface activation treatment;

D7. Upper wafer cleaning: The transport robot 310 places the upper wafer that has undergone surface activation treatment into the cleaning module 800 for wafer cleaning; The transport robot 310 places the upper wafer that has undergone surface activation treatment into the second cleaning device 820 in the cleaning module 800 for wafer cleaning;

D8. Place the upper wafer into the second bonding module 200: The transport robot 310 places the cleaned upper wafer into the second bonding module 200;

Before the upper wafer is placed on the bonding device 900 in the second bonding module 200, the spacer 952 on the bonding device 900 in the second bonding module 200 is first extended, and the handling robot 310 places the upper wafer on the spacer 952;

D9. Positioning and bonding the upper wafer in the second bonding module 200: Positioning the upper wafer in the second bonding module 200 and directly bonding it with the lower wafer, and evacuating the bonding chamber;

D91. Positioning: The adjusting robot 930 on the bonding device 900 in the second bonding module 200 absorbs the upper wafer on the spacer 952 through a suction cup, and moves the upper wafer to the second camera 920. The second camera 920 takes a picture of the second reference point on the upper wafer and records the coordinate position of the second reference point. The control system calculates the relative position of the first reference point and the second reference point according to the coordinate position of the first reference point and the coordinate position of the second reference point, and controls the adjusting robot 930 to adjust the orientation of the upper wafer according to the relative position, so as to align the second reference point of the upper wafer with the first reference point of the lower wafer. The clamping device 953 in the bonding device 900 presses the aligned lower wafer and the upper wafer.

D92, thermal compression bonding: the pressing head 940 is driven by a driving device to press the lower wafer and the upper wafer together.

D10 , taking out the bonded finished product: the transport robot 310 takes out the bonded finished product from the second bonding module 200 and places it in the wafer loading and unloading area 400 .

As shown in FIG. 6 , FIG. 7 and FIG. 10 to FIG. 12 , a wafer anodic bonding method, the wafer bonding system, and the bonding method include the following steps:

S1. Pre-positioning of lower wafer: the transport robot 310 takes the wafer from the wafer loading and unloading area 400 and places it in the pre-positioning module 500 to calibrate the wafer direction.

S2, lower wafer surface treatment: the lower wafer is sent into the plasma activation module 700 by the transfer robot 310 for surface activation treatment;

S3, lower wafer cleaning: the transport robot 310 delivers the lower wafer after surface treatment into the cleaning module 800 for cleaning; the transport robot 310 places the lower wafer after surface activation treatment into the first cleaning device 810 in the cleaning module 800 for wafer cleaning;

S4, the lower wafer enters the anodic bonding module: the lower wafer is placed into the second bonding module 200 by the handling robot 310, and the lower wafer is positioned in the second bonding module 200;

More specifically, the lower wafer is placed on the tray 951 of the positioning chuck mechanism 950 by the handling robot 310, the control system controls the moving device to drive the first camera 910 to move to a specified position, the first camera 910 takes a picture of the first reference point on the lower wafer and records the coordinate position of the first reference point, and the moving device drives the first camera 910 to return to the initial position;

S5, upper wafer pre-positioning: the handling robot 310 takes the upper wafer from the wafer loading and unloading area 400 and places it in the pre-positioning module 500 for wafer direction calibration;

S6, upper wafer surface treatment: the upper wafer is sent into the plasma activation module 700 by the transfer robot 310 for surface activation treatment;

S7, upper wafer cleaning: the transport robot 310 delivers the upper wafer after surface treatment into the cleaning module 800 for cleaning; the transport robot 310 puts the upper wafer after surface activation treatment into the second cleaning device 820 in the cleaning module 800 for wafer cleaning;

S8, the upper wafer enters the anodic bonding module: the upper wafer is placed into the second bonding module 200 by the handling robot 310;

Before the upper wafer is placed on the bonding device 900 in the second bonding module 200, the spacer 952 on the bonding device 900 in the second bonding module 200 is first extended, and the handling robot 310 places the upper wafer on the spacer 952;

S9, upper wafer positioning and electric field application, in the second bonding module 200, the upper wafer is positioned, and an electric field is generated by applying voltage, and at the same time, the bonding chamber is evacuated to complete the first step of anodic bonding, and a semi-finished wafer is obtained;

S91, positioning: the adjusting robot 930 on the bonding device 900 in the second bonding module 200 absorbs the upper wafer on the spacer 952 through a suction cup, and moves the upper wafer to the second camera 920, the second camera 920 takes a picture of the second reference point on the upper wafer and records the coordinate position of the second reference point, the control system calculates the relative position of the first reference point and the second reference point according to the coordinate position of the first reference point and the coordinate position of the second reference point, and controls the adjusting robot 930 to adjust the orientation of the upper wafer according to the relative position, and aligns the second reference point of the upper wafer with the first reference point of the lower wafer; the clamping device 953 in the bonding device 900 presses the aligned lower wafer and the upper wafer;

S92, an electric field is generated by applying voltage, and at the same time, the pressing head 940 is driven by a driving device to press the lower wafer and the upper wafer together, thereby achieving bonding and obtaining a semi-finished wafer;

S10, the second step of transporting to the first bonding module 100 for anodic bonding: the transport robot 310 transports the semi-finished wafer after the electric field to the first bonding module 100 for thermocompression bonding to obtain a finished product;

S11, cooling the bonded product: the transport robot 310 transports the bonded product to the cooling module 600 for cooling;

S12 , taking out the bonded product: the transport robot 310 takes out the bonded product from the cooling module 600 and places it in the wafer loading and unloading area 400 .

The wafer bonding system proposed in the present invention not only supports a variety of processes such as wafer hot pressing bonding, plasma activated direct bonding and anodic bonding, but also its compact layout design greatly saves space resources and facilitates flexible adjustment according to production needs. By using a single handling robot 310 to move back and forth along a linear guide in the transfer channel 300, efficient handling of wafers and chucks is achieved, reducing equipment costs and energy consumption and manpower investment during operation; at the same time, the wafer loading and unloading area 400 can centrally manage the upper wafer, lower wafer and bonded wafer, which not only simplifies the operation process, but also greatly reduces management costs. At the same time, the bonding device 900 of the present invention also utilizes the first camera 910 and the second camera 920 to work together to achieve accurate photography and coordinate recording of the wafer before bonding, ensuring that the wafer is accurately aligned during the bonding process, and adjusting the robot 930 so that the position of the upper wafer can be flexibly adjusted to meet the precise alignment requirements with the lower wafer. In addition, the present invention directly integrates the positioning chuck mechanism 950 into the bonding device 900, which changes the cumbersome transportation steps in the traditional wafer bonding process. The built-in positioning chuck mechanism 950 not only reduces the errors and wafer damage that may occur during the transportation process, but also simplifies the operation process and improves production efficiency.

The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims (10)

1. The wafer bonding system is characterized by comprising a first bonding module (100), a second bonding module (200), a transfer channel (300), a wafer blanking area (400), a pre-positioning module (500), a cooling module (600), a plasma activating module (700) and a cleaning module (800), wherein the wafer blanking area (400), the pre-positioning module (500), the cooling module (600), the plasma activating module (700) and the cleaning module (800) are arranged on one side of the transfer channel (300) side by side, and the first bonding module (100) and the second bonding module (200) are arranged on the other side of the transfer channel (300) side by side;

bonding equipment (900) is arranged in each of the first bonding die block (100) and the second bonding die block (200);

a linear guide rail is arranged in the transfer channel (300), a transfer robot (310) is arranged on the linear guide rail, and the transfer robot (310) can reciprocate along the linear guide rail to transfer the wafer;

the wafer blanking area (400) is used for loading, unloading and storing bonding finished products;

the pre-positioning module (500) is used for preliminarily correcting the direction of the wafer;

The cooling module (600) is used for controlling the temperature of the wafer during or after bonding;

the plasma activation module (700) is used for performing plasma activation treatment on the surface of the wafer;

the cleaning module (800) is used for cleaning the surface of the wafer.

2. The wafer bonding system of claim 1, wherein the on-wafer blanking zone (400) comprises an upper wafer storage module (410), a lower wafer storage module (420), and a bonded finish storage module (430).

3. The wafer bonding system of claim 2, wherein the pre-positioning module (500) includes a positioning device for initially positioning the wafer and a detecting device for detecting a direction and a position deviation of the wafer and adjusting the positioning device according to the detection result to correct the direction and the position of the wafer.

4. The wafer bonding system according to claim 1, wherein the bonding apparatus (900) comprises a first camera (910), a second camera (920), an adjustment manipulator (930), a pressing head (940) and a positioning chuck mechanism (950), the pressing head (940) is connected to a driving device and is lifted by the driving device, the pressing head (940) is used for applying a bonding force to a wafer, the positioning chuck mechanism (950) is located below the pressing head (940), the positioning chuck mechanism (950) is used for positioning and clamping the wafer to be bonded, the first camera (910) is used for photographing a datum point of a lower wafer on the positioning chuck mechanism (950) and recording the coordinate position of the datum point, the adjustment manipulator (930) is located at one side of the positioning chuck mechanism (950), the adjustment manipulator (930) is located on the position of the upper wafer after adjusting and is conveyed onto the positioning chuck mechanism (950), the second camera (920) is located on a conveying path of the adjustment manipulator (930), and the second camera (910) is used for photographing the datum point of the wafer on the coordinate position of the adjustment manipulator (930).

5. The wafer bonding system of claim 4, wherein the positioning chuck mechanism (950) comprises a tray (951), a plurality of spacers (952), and a plurality of clamping devices (953), the spacers (952) and clamping devices (953) being circumferentially disposed along the tray (951), the spacers (952) being movable in a radial direction of the tray (951), the clamping devices (953) being configured to compress two or more wafers, the spacers (952) being configured to hold an upper wafer from contact with a lower wafer prior to bonding.

6. A wafer thermocompression bonding method, comprising the wafer bonding system according to any one of claims 1 to 5, the bonding method comprising the steps of:

h1, lower wafer pre-positioning: a transfer robot (310) in the transfer channel (300) picks up a lower wafer from a wafer blanking area (400), and places the lower wafer to a preset module (500) for wafer direction calibration;

h2, placing the lower wafer into the first bonding die block (100): the calibrated lower wafer is placed into a first bonding die block (100) by a carrying robot (310), and the lower wafer is positioned in the first bonding die block (100);

H3, upper wafer pre-positioning: the transfer robot (310) in the transfer channel (300) picks up the upper wafer again from the wafer blanking area (400), and places the upper wafer to the preset module (500) for wafer direction calibration;

H4, placing the upper wafer into a first bonding module (100): the calibrated upper wafer is placed into the first bonding module (100) by a transfer robot (310) in the transfer channel (300);

h5, positioning and bonding an upper wafer: positioning an upper wafer and thermocompression bonding the upper wafer and a lower wafer in a first bonding module (100), and vacuumizing a bonding chamber in the thermocompression bonding process;

H6, cooling the bonding finished product: the transfer robot (310) in the transfer passage (300) takes out the bonded product from the first bonding module (100) and puts the bonded product to the cooling module (600) for cooling;

H7, transferring the finished product to a blanking area (400) on the wafer: the cooled finished product is taken out of the cooling module (600) by the transfer robot (310) in the transfer channel (300) and stored in the wafer blanking area (400).

7. A wafer direct bonding method comprising the wafer bonding system according to any one of claims 1-5, the bonding method comprising the steps of:

D1, pre-positioning the lower wafer: a transfer robot (310) in the transfer channel (300) picks up a lower wafer from a wafer blanking area (400), and places the lower wafer to a preset module (500) for wafer direction calibration;

And D2, performing surface activation treatment on the lower wafer: the lower wafer is put into a plasma activation module (700) by a transfer robot (310) to perform wafer surface activation treatment;

D3, cleaning a lower wafer: the transfer robot (310) puts the lower wafer subjected to the surface activation treatment into the cleaning module (800) for cleaning the wafer;

d4, placing the lower wafer into a second bonding module (200): the transfer robot (310) puts the cleaned lower wafer into the second bonding module (200), and positions the lower wafer in the second bonding module (200);

and D5, pre-positioning the upper wafer: the transfer robot (310) picks up the upper wafer from the wafer blanking area (400), and places the upper wafer to the pre-positioning module (500) for wafer direction calibration;

And D6, performing surface activation treatment on the upper wafer: the upper wafer is put into a plasma activation module (700) by a transfer robot (310) to perform the surface activation treatment of the wafer;

And D7, cleaning an upper wafer: the transfer robot (310) puts the upper wafer subjected to the surface activation treatment into the cleaning module (800) for cleaning the wafer;

D8, placing the upper wafer into a second bonding module (200): the transfer robot (310) puts the cleaned upper wafer into the second bonding module (200);

D9, positioning and bonding the upper wafer in a second bonding module (200): positioning an upper wafer in the second bonding module (200), directly bonding the upper wafer with a lower wafer, and vacuumizing a bonding cavity;

And D10, taking out a bonding finished product: the transfer robot (310) takes out the bonded product from the second bonding block (200) and places the bonded product in the wafer blanking area (400).

8. The wafer direct bonding method according to claim 7, wherein in step D3, the transfer robot (310) places the surface-activated lower wafer into the first cleaning device (810) in the cleaning module (800) for wafer cleaning; in step D7, the transfer robot (310) places the surface-activated upper wafer into a second cleaning device (820) in the cleaning module (800) for wafer cleaning.

9. A wafer anodic bonding method comprising the wafer bonding system of any of claims 1-5, the bonding method comprising the steps of:

S1, pre-positioning a lower wafer: the transfer robot (310) takes the wafer off the wafer blanking area (400) and places the wafer on the pre-positioning module (500) for wafer direction calibration;

s2, performing surface treatment on the lower wafer: the lower wafer is sent into a plasma activation module (700) by a carrying robot (310) to carry out surface activation treatment;

s3, cleaning the lower wafer: the carrying robot (310) sends the lower wafer subjected to surface treatment into the cleaning module (800) for cleaning;

S4, the lower wafer enters an anode bonding module: the lower wafer is placed into the second bonding die block (200) by the transfer robot (310), and the lower wafer is positioned in the second bonding die block (200);

S5, pre-positioning the upper wafer: the transfer robot (310) takes the wafer from the wafer blanking area (400) and puts the wafer to the pre-positioning module (500) for wafer direction calibration;

s6, surface treatment of the upper wafer: the upper wafer is sent into a plasma activation module (700) by a transfer robot (310) to perform surface activation treatment;

S7, cleaning an upper wafer: the carrying robot (310) sends the upper wafer subjected to surface treatment into the cleaning module (800) for cleaning;

s8, the upper wafer enters an anode bonding module: the upper wafer is placed into the second bonding die block (200) by the transfer robot (310);

s9, positioning the upper wafer and applying an electric field, positioning the upper wafer in a second bonding module (200), generating the electric field by applying voltage, and vacuumizing the bonding chamber to obtain a semi-finished wafer;

s10, conveying to a first bonding die block (100): a transfer robot (310) transfers the semi-finished wafer to a first bonding die block (100) and performs thermocompression bonding;

S11, cooling and bonding the finished product: the transfer robot (310) transfers the bonded product to the cooling module (600) for cooling;

S12, taking out a bonding finished product: the transfer robot (310) takes out the bonded product from the cooling module (600) and places it in the wafer blanking area (400).

10. The wafer anodic bonding method according to claim 9, characterized in that in step S3, the transfer robot (310) places the surface-activated lower wafer into the first cleaning apparatus (810) in the cleaning module (800) for wafer cleaning; in step S7, the transfer robot (310) places the surface-activated upper wafer into a second cleaning device (820) in the cleaning module (800) for wafer cleaning.