CN118089691A - Chip for composite material integrated optical gyroscope, preparation method and working method - Google Patents
Chip for composite material integrated optical gyroscope, preparation method and working method Download PDFInfo
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- CN118089691A CN118089691A CN202410260215.0A CN202410260215A CN118089691A CN 118089691 A CN118089691 A CN 118089691A CN 202410260215 A CN202410260215 A CN 202410260215A CN 118089691 A CN118089691 A CN 118089691A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 52
- 239000002131 composite material Substances 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 13
- 238000002360 preparation method Methods 0.000 title abstract description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 48
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 48
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims abstract description 40
- 239000010409 thin film Substances 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 16
- 230000005540 biological transmission Effects 0.000 claims abstract description 15
- 238000009812 interlayer coupling reaction Methods 0.000 claims abstract description 15
- 230000000694 effects Effects 0.000 claims abstract description 7
- 230000008878 coupling Effects 0.000 claims description 19
- 238000010168 coupling process Methods 0.000 claims description 19
- 238000005859 coupling reaction Methods 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 239000013307 optical fiber Substances 0.000 claims description 13
- 238000005253 cladding Methods 0.000 claims description 10
- 239000010410 layer Substances 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 238000005452 bending Methods 0.000 claims description 4
- 239000012792 core layer Substances 0.000 claims description 3
- 230000007423 decrease Effects 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 230000010287 polarization Effects 0.000 abstract description 7
- 230000010354 integration Effects 0.000 abstract description 6
- 238000012360 testing method Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 239000000835 fiber Substances 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/58—Turn-sensitive devices without moving masses
- G01C19/64—Gyrometers using the Sagnac effect, i.e. rotation-induced shifts between counter-rotating electromagnetic beams
- G01C19/66—Ring laser gyrometers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/58—Turn-sensitive devices without moving masses
- G01C19/64—Gyrometers using the Sagnac effect, i.e. rotation-induced shifts between counter-rotating electromagnetic beams
- G01C19/72—Gyrometers using the Sagnac effect, i.e. rotation-induced shifts between counter-rotating electromagnetic beams with counter-rotating light beams in a passive ring, e.g. fibre laser gyrometers
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- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Gyroscopes (AREA)
Abstract
The invention discloses a chip for a composite material integrated optical gyroscope, a preparation method and a working method, and belongs to the technical field of photoelectric integration. The beam splitter, the polarizer and the modulator are all thin film lithium niobate devices, and are optically interconnected through thin film lithium niobate waveguides. The waveguide ring is a silicon nitride material device, and the waveguide ring and the modulator are optically interconnected through an interlayer coupling structure. The chip for the composite material integrated optical gyroscope, the preparation method and the working method can realize the functions of beam splitting, polarization, phase modulation and in-loop interference of light, and can be used for forming a closed loop optical gyroscope test system, wherein the polarization effect reaches 40dB, the modulation efficiency reaches 1V cm, and the transmission loss of a waveguide loop is less than 2.5dB/m.
Description
Technical Field
The invention relates to the technical field of photoelectric integration, in particular to a chip for a composite material integrated optical gyroscope, a preparation method and a working method.
Background
The optical fiber gyro based on Saganc effect is the most developed technical system in the optical sensing field at present, is an optical inertial sensor for measuring the angular velocity of an object by utilizing an optical signal, has the advantages of simple structure, small volume, light weight, no contact, no abrasion, no electromagnetic interference and the like, and is widely applied to the fields of aerospace, national defense, ships, automobiles, robots and the like. However, the existing fiber optic gyroscope has the problems of higher cost, incapability of guaranteeing uniformity of discrete devices, difficulty in mass production and the like, and limits further development of the system and the industry thereof.
The integrated optical chip is one of research hot spots in the current photoelectric field, on-chip integration of various optical function devices can be realized through micro-nano processing means, on-chip optical waveguide is used for replacing optical fiber to realize on-chip optical interconnection, traditional optical function devices can be replaced, the structural size is only in the order of millimeters or even tens of micrometers, the development direction of the optical fiber gyro is derived, namely the integrated optical gyro is realized, and the technology of integrating the optical devices of the optical fiber gyro on one chip by utilizing micro-nano processing technology can greatly reduce the volume, the weight, the number of devices and the connection complexity of the optical fiber gyro, so that the cost and the power consumption of the optical fiber gyro are reduced.
The fiber optic gyroscope has five core devices, wherein the traditional modulator adopts a lithium niobate material as a functional core of phase modulation, the lithium niobate thin film material of the current hot spot not only has the same level of electro-optic effect, but also has lower level of loss in a waveguide structure formed by the material, is suitable for preparing devices required by all integrated optical gyroscopes, can realize smaller device size, and has the prospect of preparing cascade chips of lithium niobate-full integrated devices; the waveguides prepared from the silicon nitride material 9 can realize low loss, and can be used for realizing an on-chip integrated waveguide ring to replace a traditional optical fiber ring; at present, no reliable mixed integrated chip scheme between a lithium niobate functional device and a silicon nitride waveguide ring has been proposed.
Disclosure of Invention
The invention aims to provide a chip for a composite material integrated optical gyroscope, a preparation method and a working method, which can realize the functions of beam splitting, polarization, phase modulation and in-loop interference of light and can be used for forming a closed-loop optical gyroscope test system.
In order to achieve the above object, the present invention provides a chip for a composite material integrated optical gyro, including a beam splitter, a polarizer, a modulator, and a waveguide ring arranged in the order of transmission of input light;
The beam splitter, the polarizer and the modulator are all thin film lithium niobate devices, and are optically interconnected through thin film lithium niobate waveguides;
the waveguide ring is a silicon nitride material device, and the waveguide ring and the modulator are optically interconnected through an interlayer coupling structure.
Preferably, the waveguide core layers of the beam splitter, the polarizer and the modulator are all ridge waveguide structures;
The thin film lithium niobate waveguide is of a ridge waveguide structure, an x-cut lithium niobate material is adopted, and silicon dioxide cladding layers are coated on the ridge waveguide structure;
the ridge waveguide structure is a single-mode waveguide, the top width of the ridge waveguide in the ridge waveguide structure is 0.7-0.8 mu m, and the thicknesses of the ridge waveguide and the thin film lithium niobate waveguide are 150-250nm.
Preferably, the waveguide ring is a silicon nitride waveguide ring, the waveguide width of the silicon nitride waveguide ring is 1.8-2.2 mu m, the waveguide thickness is 0.3 mu m, and the silicon nitride waveguide ring is coated with silicon dioxide cladding up and down;
The silicon nitride waveguide ring is of a single-layer structure, a first connecting waveguide is arranged at the outer end of the silicon nitride waveguide ring, the first connecting waveguide comprises a first arc waveguide and a first linear waveguide which are sequentially arranged, and one end of the first linear waveguide is optically interconnected with the output port of the modulator through an interlayer coupling structure through a reciprocal port; the inner end of the silicon nitride waveguide ring is provided with a second connecting waveguide, the second connecting waveguide comprises a second arc-shaped waveguide, a second linear waveguide, an S-shaped waveguide and a third linear waveguide which are sequentially arranged, and one end of the third linear waveguide is optically interconnected with the other output port of the modulator through an interlayer coupling structure;
The two output ports of the modulator are in a conical structure, the reciprocal ports of the first linear waveguide and the third linear waveguide are in a conical structure, and the two output ports and the reciprocal ports of the modulator are arranged up and down and have a distance of 2-5 mu m.
Preferably, the third linear waveguide and the silicon nitride waveguide ring have at least one intersection, and the loss of each intersection is less than or equal to 0.25dB;
the third linear waveguide gradually reduces in width from the intersection point to the two sides; the width of the silicon nitride waveguide ring gradually decreases from the intersection point to both sides.
Preferably, the beam splitter is a Y-shaped beam splitter, the Y-shaped beam splitter comprises an input waveguide, a transmission waveguide and an output waveguide, the input waveguide and the output waveguide are connected with the transmission waveguide, and the output waveguide is in optical interconnection with the polarizer through a thin film lithium niobate waveguide;
The distance between the input waveguide and the output waveguide is more than or equal to 250 mu m, and the input waveguide and the output waveguide are coupled with the end face of the optical fiber array through the conical waveguide.
Preferably, the polarizer comprises an upper waveguide and a lower waveguide;
The upper waveguide comprises a coupling bending waveguide and a TM mode dissipation waveguide which are sequentially arranged;
The lower waveguide comprises a single-mode input waveguide, a variable-diameter coupling waveguide and a TE mode output waveguide which are sequentially arranged, the width of the variable-diameter coupling waveguide is gradually increased and then gradually reduced, and the position with the maximum width of the variable-diameter coupling waveguide is opposite to the coupling bending waveguide.
The preparation method of the chip for the composite material integrated optical gyroscope comprises the following specific steps:
Step S1: preparing a first discrete integrated chip provided with a beam splitter, a polarizer and a modulator through a thin film lithium niobate wafer; preparing a second discrete integrated chip provided with a waveguide ring through a silicon nitride wafer;
Step S2: the first discrete integrated chip and the second discrete integrated chip are interconnected by interlayer coupling between tapered waveguides.
Preferably, step S1 specifically includes: and respectively carrying out electron beam exposure and photoetching after transferring the patterns of the thin film lithium niobate wafer and the silicon nitride wafer to realize etching of the thin film lithium niobate wafer and the silicon nitride wafer, and then carrying out sputtering electrode layer, upper cladding layer deposition and chemical mechanical polishing.
The working method of the chip for the composite material integrated optical gyroscope comprises the following steps:
Light is input by an input waveguide of the beam splitter, enters the polarizer through the transmission waveguide, enters the modulator for beam splitting and phase modulation after being polarized by the polarizer, then enters the waveguide ring, and the Sagnac effect is generated when the chip integrally rotates, and then the light signal is output from an output waveguide of the beam splitter through the modulator and the polarizer, so that the detection function of the closed-loop integrated optical gyroscope is realized.
Therefore, the chip for the composite material integrated optical gyroscope, the preparation method and the working method adopting the structure have the following beneficial effects:
(1) The on-chip integration of the lithium niobate functional device and the silicon nitride waveguide ring is realized, the miniaturization is realized, the performance of each integrated optical device is ensured, and the hybrid integration among the multi-material chips is completed.
(2) The initial exploration of the chip for the on-chip integrated optical gyroscope is realized, wherein the insertion loss of the whole chip of the lithium niobate part is about 12dB, the theoretical modulation efficiency of the lithium niobate modulator is 1V cm, the theoretical polarization extinction ratio of the lithium niobate polarizer is more than 40dB, the whole loss of the silicon nitride waveguide ring is less than 2.5dB/m, the self precision of the waveguide ring is 0.5-1 DEG/h, a certain foundation is laid for the whole-chip integration of each active and passive device of the future optical gyroscope, and a new way is opened up for the miniaturization and light weight development of the optical gyroscope.
(3) The chip can be adapted to the existing thin film lithium niobate-based processing technology and silicon nitride-based processing technology, can process related devices to form PDK, and has the prospect of large-scale and batch production so as to reduce the overall cost of an integrated optical gyro system.
The technical scheme of the invention is further described in detail through the drawings and the embodiments.
Drawings
FIG. 1 is a schematic diagram of a chip structure for a composite material integrated optical gyroscope according to the present invention;
FIG. 2 is a cross-sectional view of a ridge waveguide structure of the present invention;
FIG. 3 is a cross-sectional view of a silicon nitride waveguide according to the present invention;
FIG. 4 is a schematic diagram of the end-on coupling of a beam splitter with an optical fiber array according to the present invention;
FIG. 5 is a schematic view of a polarizer according to the present invention;
FIG. 6 is a schematic diagram of an interlayer coupling structure according to the present invention;
FIG. 7 is a top view of a silicon nitride waveguide ring of the present invention;
fig. 8 is a schematic diagram of a cross-point structure according to the present invention.
Reference numerals
1. A beam splitter; 101. an input waveguide; 102. an output waveguide; 103. a transmission waveguide; 2. a polarizer; 21. a lower waveguide; 211. a single mode input waveguide; 212. a variable diameter coupling waveguide; 213. a TE mode output waveguide; 22. an upper waveguide; 221. coupling a curved waveguide; 222. TM mode dissipative waveguides; 3. a modulator; 31. an output port; 4. a waveguide ring; 41. a silicon nitride waveguide ring; 42. a first arcuate waveguide; 43. a first linear waveguide; 44. a second arcuate waveguide; 45. a second linear waveguide; 46. an S-shaped waveguide; 47. a third linear waveguide; 5. an interlayer coupling structure; 6. a thin film lithium niobate waveguide; 7. a silica cladding; 8. a lithium niobate material; 9. a silicon nitride material; 10. an array of optical fibers.
Detailed Description
Examples
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present invention, it should be noted that, directions or positional relationships indicated by terms such as "upper", "lower", "inner", "outer", etc., are directions or positional relationships based on those shown in the drawings, or those that are conventionally put in use, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the apparatus or elements to be referred to must have a specific direction, be constructed and operated in a specific direction, and thus should not be construed as limiting the present invention.
In the description of the present invention, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed," "mounted," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
As shown in fig. 1, a chip for a composite material integrated optical gyro includes a beam splitter 1, a polarizer 2, a modulator 3, and a waveguide ring 4 provided in the order of transmission of input light.
The beam splitter 1, the polarizer 2 and the modulator 3 are all thin film lithium niobate devices, and the beam splitter 1, the polarizer 2 and the modulator 3 are optically interconnected through a thin film lithium niobate waveguide 6. The waveguide core layers of the beam splitter 1, the polarizer 2 and the modulator 3 are all ridge waveguide structures, the thin film lithium niobate waveguide 6 is also a ridge waveguide structure, and an x-cut lithium niobate material is adopted, as shown in fig. 2, the middle part of the ridge waveguide structure is a lithium niobate material 8, and silicon dioxide cladding layers 7 are coated up and down, so that effective constraint of a light field mode can be realized. The ridge waveguide structure is a single-mode waveguide, the width W1 of the top of the ridge waveguide in the ridge waveguide structure is 0.7-0.8 mu m, and the thicknesses h1 of the ridge waveguide and the thin film lithium niobate waveguide 6 are 150-250nm.
The beam splitter 1 is a Y-shaped beam splitter 1, the Y-shaped beam splitter 1 comprises an input waveguide 101, a transmission waveguide 103 and an output waveguide 102, the input waveguide 101 and the output waveguide 102 are connected with the transmission waveguide 103, and the output waveguide 102 is in optical interconnection with the polarizer 2 through a thin film lithium niobate waveguide 6. As shown in fig. 4, the distance between the input waveguide 101 and the output waveguide 102 is larger than 250 μm, and the input waveguide 101 and the output waveguide 102 are coupled with the end face of the optical fiber array 10 through tapered waveguides, so that the coupling efficiency between the chip and the optical fibers is ensured to reach about 85%.
As shown in fig. 5, the polarizer 2 includes an upper waveguide 22 and a lower waveguide 21, and the upper waveguide 22 includes a coupling curved waveguide 221 and a TM mode dissipative waveguide 222, which are disposed in this order. The lower waveguide 21 includes a single-mode input waveguide 211, a variable-diameter coupling waveguide 212, and a TE-mode output waveguide 213, which are sequentially disposed, the variable-diameter coupling waveguide 212 having a width gradually increasing and then gradually decreasing, and the variable-diameter coupling waveguide 212 having a maximum width being disposed opposite to the coupling curved waveguide 221. The polarizer 2 has a unidirectional polarization function, and the polarization state of the light can not change after the light is output from the waveguide ring 4 and passes through the polarizer 2, so that the polarization effect reaches 40dB.
The waveguide ring 4 is a silicon nitride material device, and the waveguide ring 4 and the modulator 3 are optically interconnected through an interlayer coupling structure 5. As shown in fig. 7, the waveguide ring 4 is a silicon nitride waveguide ring 41, the waveguide width W of the silicon nitride waveguide ring 41 is 1.8-2.2 μm, the waveguide thickness h is 0.3 μm, the overall loss of the silicon nitride waveguide ring 41 is less than 2.5dB/m, and the self-precision of the waveguide ring 4 is 0.5-1 °/h. As shown in fig. 3, the silicon nitride waveguide ring 41 is made of silicon nitride material 9 in the middle and is coated with silicon dioxide cladding 7 up and down, so that the optical field mode can be effectively restrained. The silicon nitride waveguide ring 41 is of a single-layer structure, a first connecting waveguide is arranged at the outer end of the silicon nitride waveguide ring 41, the first connecting waveguide comprises a first arc-shaped waveguide 42 and a first linear waveguide 43 which are sequentially arranged, and one end of the first linear waveguide 43 is optically interconnected with the output port 31 of the modulator 3 through an interlayer coupling structure 5 through a reciprocal port; the inner end of the silicon nitride waveguide ring 41 is provided with a second connection waveguide, which includes a second arc waveguide 44, a second linear waveguide 45, an S-shaped waveguide 46, and a third linear waveguide 47, which are sequentially provided, and one end of the third linear waveguide 47 is optically interconnected with the other output port 31 of the modulator 3 through the interlayer coupling structure 5 through a reciprocal port. As shown in fig. 6, the two output ports 31 of the modulator 3 are in a tapered structure, the reciprocal ports of the first linear waveguide 43 and the third linear waveguide 47 are in a tapered structure, and the two output ports 31 of the modulator 3 are arranged up and down with the reciprocal ports at a pitch of 2-5 μm. The modulation efficiency reaches 1V cm, and the transmission loss of the waveguide ring 4 is less than 2.5dB/m
As shown in fig. 8, the third linear waveguide 47 and the silicon nitride waveguide ring 41 have at least one intersection, and the loss at each intersection is 0.25dB or less. The third linear waveguide 47 gradually decreases in width in the direction from the intersection to both sides; the silicon nitride waveguide ring 41 gradually reduces in width from the crossing point to both sides, constructs a1×1 MMI-like structure, performs multimode interference at each crossing point, and reduces the generated parasitic loss so that the loss at each crossing point is reduced to below 0.25dB.
The preparation method of the chip for the composite material integrated optical gyroscope comprises the following specific steps:
Step S1: preparing a first discrete integrated chip provided with a beam splitter 1, a polarizer 2 and a modulator 3 by a thin film lithium niobate wafer; preparing a second discrete integrated chip provided with a waveguide ring 4 by a silicon nitride wafer; the step S1 specifically comprises the following steps: and respectively carrying out electron beam exposure and photoetching after transferring the patterns of the thin film lithium niobate wafer and the silicon nitride wafer to realize etching of the thin film lithium niobate wafer and the silicon nitride wafer, and then carrying out sputtering electrode layer, upper cladding layer deposition and chemical mechanical polishing.
Step S2: the first discrete integrated chip and the second discrete integrated chip are interconnected by interlayer coupling between tapered waveguides.
The working method of the chip for the composite material integrated optical gyroscope specifically comprises the following steps:
Light is input by an input waveguide 101 of the beam splitter 1, enters the polarizer 2 through a transmission waveguide 103, enters the modulator 3 for beam splitting and phase modulation after being polarized by the polarizer 2, then enters the waveguide ring 4, and the Sagnac effect is generated when the chip integrally rotates, and an optical signal is output from an output waveguide 102 of the beam splitter 1 through the modulator 3 and the polarizer 2, so that the detection function of the closed-loop integrated optical gyroscope is realized. The front two ports of the beam splitter 1 are respectively coupled with a wide-spectrum light source and a detector component, so that an on-chip hybrid integrated optical gyroscope can be formed, and the closed loop optical path of the optical gyroscope is formed.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention and not for limiting it, and although the present invention has been described in detail with reference to the preferred embodiments, it will be understood by those skilled in the art that: the technical scheme of the invention can be modified or replaced by the same, and the modified technical scheme cannot deviate from the spirit and scope of the technical scheme of the invention.
Claims (9)
1. The chip for the composite material integrated optical gyroscope is characterized in that: the device comprises a beam splitter, a polarizer, a modulator and a waveguide ring which are arranged according to the transmission sequence of input light;
The beam splitter, the polarizer and the modulator are all thin film lithium niobate devices, and are optically interconnected through thin film lithium niobate waveguides;
the waveguide ring is a silicon nitride material device, and the waveguide ring and the modulator are optically interconnected through an interlayer coupling structure.
2. The chip for a composite integrated optical gyro according to claim 1, wherein: the waveguide core layers of the beam splitter, the polarizer and the modulator are all ridge waveguide structures;
The thin film lithium niobate waveguide is of a ridge waveguide structure, an x-cut lithium niobate material is adopted, and silicon dioxide cladding layers are coated on the ridge waveguide structure;
the ridge waveguide structure is a single-mode waveguide, the top width of the ridge waveguide in the ridge waveguide structure is 0.7-0.8 mu m, and the thicknesses of the ridge waveguide and the thin film lithium niobate waveguide are 150-250nm.
3. The chip for a composite integrated optical gyro according to claim 1, wherein: the waveguide ring is a silicon nitride waveguide ring, the waveguide width of the silicon nitride waveguide ring is 1.8-2.2 mu m, the waveguide thickness is 0.3 mu m, and the silicon nitride waveguide ring is coated with silicon dioxide cladding up and down;
The silicon nitride waveguide ring is of a single-layer structure, a first connecting waveguide is arranged at the outer end of the silicon nitride waveguide ring, the first connecting waveguide comprises a first arc waveguide and a first linear waveguide which are sequentially arranged, and one end of the first linear waveguide is optically interconnected with the output port of the modulator through an interlayer coupling structure through a reciprocal port; the inner end of the silicon nitride waveguide ring is provided with a second connecting waveguide, the second connecting waveguide comprises a second arc-shaped waveguide, a second linear waveguide, an S-shaped waveguide and a third linear waveguide which are sequentially arranged, and one end of the third linear waveguide is optically interconnected with the other output port of the modulator through an interlayer coupling structure;
The two output ports of the modulator are in a conical structure, the reciprocal ports of the first linear waveguide and the third linear waveguide are in a conical structure, and the two output ports and the reciprocal ports of the modulator are arranged up and down and have a distance of 2-5 mu m.
4. A chip for a composite integrated optical gyroscope according to claim 3, wherein: the third linear waveguide and the silicon nitride waveguide ring are provided with at least one intersection point, and the loss of each intersection point is less than or equal to 0.25dB;
the third linear waveguide gradually reduces in width from the intersection point to the two sides; the width of the silicon nitride waveguide ring gradually decreases from the intersection point to both sides.
5. The chip for a composite integrated optical gyro according to claim 1, wherein: the beam splitter is a Y-shaped beam splitter, the Y-shaped beam splitter comprises an input waveguide, a transmission waveguide and an output waveguide, the input waveguide and the output waveguide are connected with the transmission waveguide, and the output waveguide is in optical interconnection with the polarizer through a thin film lithium niobate waveguide;
The distance between the input waveguide and the output waveguide is larger than 250 mu m, and the input waveguide and the output waveguide are coupled with the end face of the optical fiber array through the conical waveguide.
6. The chip for a composite integrated optical gyro according to claim 1, wherein: the polarizer comprises an upper waveguide and a lower waveguide;
The upper waveguide comprises a coupling bending waveguide and a TM mode dissipation waveguide which are sequentially arranged;
The lower waveguide comprises a single-mode input waveguide, a variable-diameter coupling waveguide and a TE mode output waveguide which are sequentially arranged, the width of the variable-diameter coupling waveguide is gradually increased and then gradually reduced, and the position with the maximum width of the variable-diameter coupling waveguide is opposite to the coupling bending waveguide.
7. The method for manufacturing a chip for a composite material integrated optical gyroscope according to any one of claims 1 to 6, characterized by comprising the following specific steps:
Step S1: preparing a first discrete integrated chip provided with a beam splitter, a polarizer and a modulator through a thin film lithium niobate wafer; preparing a second discrete integrated chip provided with a waveguide ring through a silicon nitride wafer;
Step S2: the first discrete integrated chip and the second discrete integrated chip are interconnected by interlayer coupling between tapered waveguides.
8. The method for manufacturing a chip for a composite material integrated optical gyroscope according to claim 7, wherein step S1 specifically comprises: and respectively carrying out electron beam exposure and photoetching after transferring the patterns of the thin film lithium niobate wafer and the silicon nitride wafer to realize etching of the thin film lithium niobate wafer and the silicon nitride wafer, and then carrying out sputtering electrode layer, upper cladding layer deposition and chemical mechanical polishing.
9. The method for operating a chip for a composite material integrated optical gyroscope according to any one of claims 1 to 6, characterized in that: light is input by an input waveguide of the beam splitter, enters the polarizer through the transmission waveguide, enters the modulator for beam splitting and phase modulation after being polarized by the polarizer, then enters the waveguide ring, and the Sagnac effect is generated when the chip integrally rotates, and then the light signal is output from an output waveguide of the beam splitter through the modulator and the polarizer, so that the detection function of the closed-loop integrated optical gyroscope is realized.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410260215.0A CN118089691A (en) | 2024-03-07 | 2024-03-07 | Chip for composite material integrated optical gyroscope, preparation method and working method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118654657A (en) * | 2024-08-19 | 2024-09-17 | 北京航空航天大学 | Fully-integrated optical gyroscope containing thin-film lithium niobate multifunctional chip |
| CN118655657A (en) * | 2024-08-21 | 2024-09-17 | 北京航空航天大学 | Full-film lithium niobate chip for triaxial integrated optical gyroscope |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118654657A (en) * | 2024-08-19 | 2024-09-17 | 北京航空航天大学 | Fully-integrated optical gyroscope containing thin-film lithium niobate multifunctional chip |
| CN118655657A (en) * | 2024-08-21 | 2024-09-17 | 北京航空航天大学 | Full-film lithium niobate chip for triaxial integrated optical gyroscope |
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