CN117007561A

CN117007561A - Spectrum measuring system, method and device for semiconductor material

Info

Publication number: CN117007561A
Application number: CN202311263694.3A
Authority: CN
Inventors: 张璐; 展永政; 林宁亚; 张青
Original assignee: Suzhou Metabrain Intelligent Technology Co Ltd
Current assignee: Suzhou Metabrain Intelligent Technology Co Ltd
Priority date: 2023-09-27
Filing date: 2023-09-27
Publication date: 2023-11-07
Anticipated expiration: 2043-09-27
Also published as: CN117007561B

Abstract

The embodiment of the application provides a spectrum measurement system, a method and a device for semiconductor materials. The system comprises: an excitation light source for providing a first light beam for exciting the semiconductor material sample to the sample stage, the first light beam for focusing to a measurement point on the semiconductor material sample to form a second light beam, the second light beam comprising an outgoing light formed by photoluminescence of the semiconductor material sample under irradiation of the first light beam; a first optical element assembly including at least an optical shaping element, an optical attenuation element, and a focusing element disposed in sequence on an optical path of the first light beam for focusing the first light beam to a spot size of the measurement point that is less than one half of a size of the semiconductor material sample; and the spectrum measuring unit is arranged on one side of the sample stage and is used for receiving the second light beam and generating photoluminescence spectrum corresponding to the measuring point according to the second light beam. The application solves the problem that the semiconductor material in the related technology has larger measurement difficulty of photoluminescence spectrum due to smaller size.

Description

Spectrum measuring system, method and device for semiconductor material

Technical Field

Embodiments of the present application relate to the field of computers, and in particular, to a spectrum measurement system, a spectrum measurement system method, a spectrum measurement system apparatus, a computer-readable storage medium, and an electronic device for a semiconductor material.

Background

Semiconductor materials include insulators, semiconductors, conductors, superconductors, and the like, and research into properties of various semiconductor materials has prompted technological development, wherein photoluminescence is an important property of semiconductor materials.

With the deep research of semiconductor materials, more and more photoluminescence spectra of semiconductor materials are measured at present, however, the sizes of many semiconductor materials are smaller, and some semiconductor materials are only a few micrometers, so that the measurement difficulty is high, and the requirements on the size and the precision of measurement equipment are higher.

Disclosure of Invention

The embodiment of the application provides a spectrum measuring system, a spectrum measuring system method, a spectrum measuring system device, a computer readable storage medium and electronic equipment for semiconductor materials, which are used for at least solving the problem that the measurement difficulty of photoluminescence spectra of semiconductor materials is high due to the fact that the semiconductor materials are small in size in the related art.

According to one embodiment of the present application, there is provided a spectroscopic measurement system of a semiconductor material, comprising: a sample stage for placing a sample of semiconductor material; the excitation light source is arranged on one side of the sample stage and is used for providing a first light beam for exciting the semiconductor material sample to the sample stage, the first light beam is used for focusing to a measuring point on the semiconductor material sample to form a second light beam, and the second light beam comprises emergent light formed by photoluminescence of the semiconductor material sample under the irradiation of the first light beam; a first optical element assembly including at least an optical shaping element, an optical attenuation element, and a focusing element disposed in sequence on an optical path of the first light beam for focusing the first light beam to a spot size of the measurement point that is less than one half of a size of the semiconductor material sample; and the spectrum measuring unit is arranged on one side of the sample stage and is used for receiving the second light beam and generating photoluminescence spectrum corresponding to the measuring point according to the second light beam.

In one exemplary embodiment, an excitation light source includes: the laser assembly is arranged on one side of the sample table and comprises a plurality of lasers for emitting laser with different wavelengths; and the first control module is electrically connected with the laser assemblies and used for controlling one laser in the laser assemblies to emit laser so as to provide a first light beam for the sample stage.

In one exemplary embodiment, the spectral measurement system further comprises: a chamber for setting a sample stage; the temperature control unit is arranged in the cavity or at one side of the cavity and is used for controlling the temperature in the cavity; and the pressure control unit is communicated with the chamber and is used for adjusting the pressure in the chamber.

In one exemplary embodiment, the spectral measurement system further comprises: the first driving device is connected with the sample table and used for driving the sample table to horizontally move and lift; the second control module is electrically connected with the first driving device and used for controlling the first driving device to drive the movement and the lifting of the sample table.

In one exemplary embodiment, the optical shaping element comprises a first lens and a second lens, wherein: the first lens is arranged on the light emitting side of the excitation light source and is used for focusing a first light beam from the excitation light source to the first lens; the second lens is arranged on the light emergent side of the first lens and is used for parallelly emergent the focused first light beam.

In one exemplary embodiment, the first optical element assembly further comprises a first semi-transparent semi-reflective mirror and a first reflective mirror, wherein: the first half-transmitting half-reflecting mirror is arranged on the light emitting side of the optical attenuation element and is used for reflecting the first light beam from the excitation light source to the first reflecting mirror and transmitting the second light beam reflected by the first reflecting mirror; the first reflector is arranged on the light incident side of the focusing element and one side of the first half-reflecting mirror and is used for reflecting the first light beam reflected by the first half-reflecting mirror to the focusing element and reflecting the second light beam from the sample stage to the first half-reflecting mirror.

In one exemplary embodiment, a spectral measurement unit includes: the spectrometer is arranged on one side of the sample table and is used for generating photoluminescence spectrum from the emergent light formed by photoluminescence; the optical filter component is arranged on the light incident side of the spectrometer and is used for transmitting light with a specific wavelength, wherein the emergent light formed by photoluminescence has the specific wavelength.

In an exemplary embodiment, the spectral measurement unit further comprises: the shading component is arranged on the light incident side of the spectrometer and is provided with a through hole corresponding to the detector in the spectrometer, and the through hole is used for emitting light formed by photoluminescence.

In one exemplary embodiment, the spectral measurement system further comprises: the second optical element assembly is arranged on the light emitting side of the optical filter assembly and the light entering side of the spectrometer and is used for adjusting the light path of the second light beam so that the second light beam is incident into the spectrometer.

In one exemplary embodiment, the spectral measurement system further comprises: the image acquisition unit is arranged on one side of the sample table and is used for acquiring images of a target area in the semiconductor material sample placed on the sample table, wherein the target area comprises a measuring point.

In one exemplary embodiment, an image acquisition unit includes: the illumination light source assembly is arranged on one side of the sample table and is used for providing illumination light beams for the semiconductor material sample on the sample table; the illumination light source assembly is arranged on one side of the sample table and is used for providing illumination light beams for the semiconductor material sample on the sample table;

in one exemplary embodiment, an image acquisition unit includes: and the third optical element assembly is arranged on one side of the first optical element assembly and the light incident side of the camera assembly and is used for adjusting the light path of the illumination light beam reflected by the target area so as to enable the illumination light beam to be incident into the camera assembly.

In one exemplary embodiment, the third optical element assembly includes a second semi-transparent semi-reflective mirror and a third reflective mirror, wherein: the second half-transmitting half-reflecting mirror is arranged between the first optical element assembly and the optical filtering assembly and is used for transmitting the second light beam from the first optical element assembly and reflecting the illumination light beam from the first optical element assembly to the third reflecting mirror; the third reflector is arranged on one side of the second half-transmitting half-reflecting mirror and the light incident side of the camera assembly and is used for reflecting the illumination light beams from the third reflector into the camera assembly.

In one exemplary embodiment, an illumination light source assembly includes: an illumination source for providing an illumination beam; the fourth optical element assembly is arranged on the light emitting side of the illumination light source and the light entering side of the first optical element assembly and is used for adjusting the light path of the illumination light beam so that the illumination light beam irradiates the semiconductor material sample on the sample stage.

In one exemplary embodiment, the fourth optical element assembly includes a third lens, a fourth lens, and a third half mirror, wherein: the third lens is arranged on the light emitting side of the illumination light source and is used for focusing the illumination light beam from the illumination light source to the fourth lens; the fourth lens is arranged on the light emergent side of the third lens and is used for parallelly emergent focused illumination light beams; the third half-transmitting half-reflecting mirror is arranged on the light-emitting side of the fourth lens and is used for reflecting the illumination light beam from the fourth lens to the focusing element and transmitting the second light beam from the first optical element assembly.

In an exemplary embodiment, the image acquisition unit further comprises: the shielding component is arranged on the light emitting side of the excitation light source; the second driving device is connected with the shielding assembly and used for driving the shielding assembly to shield the first light beam emitted by the excitation light source; the third control module is electrically connected with the second driving device and used for controlling the second driving device to drive the shielding assembly to shield the first light beam.

According to another embodiment of the present application, there is provided a spectrum measuring method of a semiconductor material, which is applied to the spectrum measuring system of the semiconductor material, the spectrum measuring method includes: in the case of placing a semiconductor material sample on a sample stage in a spectroscopic measurement system, controlling an excitation light source in the spectroscopic measurement system to provide a first light beam that excites the semiconductor material sample such that the first light beam is focused to a measurement point on the semiconductor material sample to form a second light beam comprising an outgoing light of the semiconductor material sample formed by photoluminescence under irradiation of the first light beam; and receiving the photoluminescence spectrum generated by a spectrum measuring unit in the spectrum measuring system, wherein the spectrum measuring unit is used for receiving the second light beam and generating the photoluminescence spectrum corresponding to the measuring point according to the second light beam.

In one exemplary embodiment, an excitation light source includes a laser assembly including a plurality of lasers for emitting laser light of different wavelengths, the excitation light source in a spectroscopic measurement system being controlled to provide a first beam of light that excites a semiconductor material sample, comprising: receiving a detection signal corresponding to a semiconductor material sample; analyzing the detection signal to obtain detection information corresponding to the semiconductor material sample, wherein the detection information comprises the band gap of the semiconductor material sample; based on the detection information, a first control signal is generated such that the laser assembly outputs a first light beam having an energy greater than a bandgap of the semiconductor material sample based on the first control signal.

In an exemplary embodiment, the spectrum measuring system further includes an image collecting unit disposed at one side of the sample stage, and a first driving device connected to the sample stage, and the spectrum measuring method further includes: the spectrum measurement system also comprises an image acquisition unit and a first driving device, wherein the image acquisition unit is arranged on one side of the sample stage, the first driving device is connected with the sample stage, and the spectrum measurement method further comprises the following steps: and generating a second control signal according to the image of the partial region and a preset image, so that the first driving device controls the sample stage to horizontally move to a first target position according to the second control signal, wherein the preset image is a complete image of the surface to be detected of the semiconductor material sample, and the image acquired by the image acquisition unit is an image of the target region in the semiconductor material sample under the condition that the sample stage moves to the first target position.

In one exemplary embodiment, the spectral measurement system further includes an illumination light source assembly, a camera assembly, a shielding assembly, and a second driving device, the illumination light source assembly and the camera assembly are disposed on one side of the sample stage, the shielding assembly is disposed on a light emitting side of the excitation light source, the second driving device is connected with the shielding assembly, the third control module is electrically connected with the second driving device, and acquires an image of a partial region of the semiconductor material sample acquired by the image acquisition unit, including: outputting a third control signal to the second driving device so that the second driving device drives the shielding assembly to shield the first light beam; outputting an on signal to the illumination light source such that the illumination light source irradiates the illumination light beam to a partial region of the semiconductor material sample with the first light beam being blocked by the blocking assembly, wherein the camera assembly is configured to receive the illumination light beam reflected by the partial region and generate an image of the partial region from the illumination light beam.

In one exemplary embodiment, generating the second control signal according to the image of the partial region and the preset image includes: acquiring a preset image, wherein the preset image is provided with a first pixel area corresponding to a target area; determining a second pixel area corresponding to the image of the partial area in the preset image; generating displacement information according to a first position of a first pixel area in a preset image and a second position of a second pixel area in the preset image, wherein the displacement information comprises displacement parameters of a sample stage in a horizontal direction, the horizontal direction is any direction parallel to a bearing surface of the sample stage, and the displacement parameters correspond to the distance between the first position and the second position; and generating a second control signal according to the displacement information.

In an exemplary embodiment, the spectral measurement method further comprises: outputting a fourth control signal and a closing signal under the condition that the sample stage moves to the first target position, so that the second driving device drives the shielding assembly to release shielding of the first light beam according to the fourth control signal, and the illumination light source stops irradiating the illumination light beam according to the closing signal; acquiring light spot information corresponding to the first light beam, wherein the light spot information comprises the light spot size of the first light beam irradiated onto the target area; and generating a fourth control signal according to the light spot information and the preset light spot size, so that the first driving device controls the sample stage to vertically move to the second target position according to the fourth control signal, wherein the light spot size of the first light beam irradiated to the target area is the same as the preset light spot size under the condition that the sample stage moves to the second target position, and the preset light spot size is smaller than one half of the size of the semiconductor material sample.

According to still another embodiment of the present application, there is provided a spectrum measuring apparatus for a semiconductor material, which is applied to the spectrum measuring system for a semiconductor material, including: a control module for controlling an excitation light source in the spectrum measurement system to provide a first light beam for exciting the semiconductor material sample under the condition that the semiconductor material sample is placed on a sample stage in the spectrum measurement system, so that the first light beam is focused to a measurement point on the semiconductor material sample to form a second light beam, and the second light beam comprises emergent light formed by photoluminescence of the semiconductor material sample under the irradiation of the first light beam; and the receiving module is used for receiving the photoluminescence spectrum generated by the spectrum measuring unit in the spectrum measuring system, wherein the spectrum measuring unit is used for receiving the second light beam and generating the photoluminescence spectrum corresponding to the measuring point according to the second light beam.

According to a further embodiment of the application, there is also provided a computer readable storage medium having a computer program stored therein, wherein the computer program is arranged to perform the steps of any of the method embodiments described above when run.

According to a further embodiment of the application there is also provided an electronic device comprising a memory having a computer program stored therein and a processor arranged to run the computer program to perform the steps of any of the method embodiments described above.

According to the application, as the first optical element assembly in the spectrum measuring system at least comprises the optical shaping element, the optical attenuation element and the focusing element which are sequentially arranged on the optical path of the first light beam, the first light beam can be focused to the spot size of the measuring point by the first optical element assembly, which is smaller than one half of the size of the semiconductor material sample, so that the measurement accuracy of the photoluminescence spectrum of the semiconductor material with smaller size can be effectively improved; in particular, the two-dimensional materials in the semiconductor materials are smaller in size, some of the two-dimensional materials are only a few micrometers in size, and the requirements on the size and the precision of the measuring equipment are higher, but by adopting the spectrum measuring system disclosed by the application, the light path can be adjusted through the first optical element assembly, so that the light spot size of an excitation light source focused to a measuring point is minimum to 2 micrometers, and the photoluminescence spectrum of the two-dimensional semiconductor materials with the size of more than 5 micrometers can be effectively measured. Therefore, the spectrum measuring system can solve the problem that the semiconductor material has larger measuring difficulty of photoluminescence spectrum due to smaller size in the related technology, and realize the effect of accurately measuring the photoluminescence spectrum of the semiconductor material with smaller size.

Drawings

FIG. 1 is a block diagram of a spectral measurement system of semiconductor material according to an embodiment of the present application;

FIG. 2 is a block diagram of a spectral measurement system of another semiconductor material in accordance with an embodiment of the present application;

FIG. 3 is a flow chart of a photoluminescence spectrometry procedure for a spectrometry system for use with semiconductor materials according to an embodiment of the application;

FIG. 4 is a schematic illustration of a photoluminescence spectrum of tin disulfide obtained by a spectroscopic measurement system employing semiconductor materials in accordance with an embodiment of the application;

fig. 5 is a block diagram of a hardware structure of a mobile terminal applied to a spectrum measuring method of a semiconductor material according to an embodiment of the present application;

FIG. 6 is a flow chart of a method of spectral measurement of semiconductor material according to an embodiment of the present application;

fig. 7 is a block diagram of a spectrum measuring apparatus for semiconductor material according to an embodiment of the present application.

Detailed Description

Embodiments of the present application will be described in detail below with reference to the accompanying drawings in conjunction with the embodiments.

It should be noted that the terms "first," "second," and the like in the description and the claims of the present application and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order.

According to an embodiment of the present application, there is provided a spectrum measuring system for semiconductor material, and fig. 1 is a block diagram of a structure of a spectrum measuring system for semiconductor material according to an embodiment of the present application. As shown in fig. 1, the system includes: a sample stage 11 for placing a sample of semiconductor material; an excitation light source 100 disposed at one side of the sample stage, for providing a first light beam for exciting the semiconductor material sample to the sample stage, the first light beam being for focusing to a measurement point on the semiconductor material sample to form a second light beam, the second light beam including an outgoing light formed by photoluminescence of the semiconductor material sample under irradiation of the first light beam; a first optical element assembly 200 comprising at least an optical shaping element, an optical attenuation element and a focusing element arranged in sequence on the optical path of the first light beam for focusing the first light beam to a spot size at the measurement point smaller than one half the size of the semiconductor material sample; the spectrum measuring unit 300 is disposed at one side of the sample stage, and is configured to receive the second light beam, and generate a photoluminescence spectrum corresponding to the measurement point according to the second light beam. The arrow direction shown in fig. 1 is the optical path direction.

With the above embodiment, since the first optical element assembly in the spectrum measurement system includes at least the optical shaping element, the optical attenuation element, and the focusing element sequentially disposed on the optical path of the first light beam, the spot size of the first light beam focused to the measurement point by the first optical element assembly can be smaller than one half of the size of the semiconductor material sample, so that measurement accuracy of photoluminescence spectrum of the semiconductor material with smaller size can be effectively improved; in particular, the two-dimensional materials in the semiconductor materials are smaller in size, some of the two-dimensional materials are only a few micrometers in size, and the requirements on the size and the precision of the measuring equipment are higher, but by adopting the spectrum measuring system disclosed by the application, the light path can be adjusted through the first optical element assembly, so that the light spot size of an excitation light source focused to a measuring point is minimum to 2 micrometers, and the photoluminescence spectrum of the two-dimensional semiconductor materials with the size of more than 5 micrometers can be effectively measured. Therefore, the spectrum measuring system can solve the problem that the semiconductor material has larger measuring difficulty of photoluminescence spectrum due to smaller size in the related technology, and realize the effect of accurately measuring the photoluminescence spectrum of the semiconductor material with smaller size.

In some optional implementations, the excitation light source in this embodiment includes: the laser assembly is arranged on one side of the sample table and comprises a plurality of lasers for emitting laser with different wavelengths; and the first control module is electrically connected with the laser assemblies and used for controlling one laser in the laser assemblies to emit laser so as to provide a first light beam for the sample stage.

In the above alternative embodiment, the laser may be a solid-state laser, and laser light emitted from a laser having a suitable wavelength is used as excitation light according to the semiconductor material to be measured. Specifically, there is an inverse relation between the laser wavelength and the energy of the solid-state laser, that is, the shorter the laser wavelength is, the higher the laser energy is, because the shorter the laser wavelength is, the greater the energy of each laser photon is, so that the same laser energy will generate more photons in the case of shorter wavelength, and further, because photoluminescence can be realized in the case that the laser energy of the laser is greater than the bandgap of the semiconductor material, the laser wavelength of the laser can be reasonably selected according to the bandgap of the semiconductor material, so as to realize photoluminescence of the semiconductor material under the laser action in the laser.

In the first optical element assembly of the present embodiment, the optical shaping element is disposed on the light emitting side of the excitation light source, and the optical attenuation element and the focusing element are disposed on the side of the sample stage having the bearing surface, for focusing the first light beam to the measurement point of the semiconductor material sample.

Specifically, as shown in fig. 2, the focusing element may be a first objective lens 13 fixed above the sample stage 11, and after the first light beam emitted from the laser assembly 14 reaches the first objective lens 13 above the sample stage 11, the first light beam is focused onto the semiconductor material sample 12 by the first objective lens 13 to form a detection point. In the case of detecting the semiconductor material sample 12, the test environment of the sample stage 11 may be a low-temperature environment, and in this case, the first objective lens 13 may be a low-temperature objective lens, and the low-temperature objective lens may still perform an excellent focusing function on the light beam in the low-temperature environment.

In some alternative embodiments, the optical shaping element comprises a first lens and a second lens, wherein: the first lens is arranged on the light emitting side of the excitation light source and is used for focusing a first light beam from the excitation light source to the first lens; the second lens is arranged on the light emergent side of the first lens and is used for parallelly emergent the focused first light beam.

Specifically, as shown in fig. 2, the first light beam emitted from the laser component 14 passes through the first lens 31 and then is focused, and then passes through the second lens 32, so that the first light beam emitted is a parallel light beam, the parallel first light beam passes through the optical attenuation piece 33 to attenuate the light intensity, and the first light beam with attenuated light intensity is focused onto the semiconductor material sample 12 through the first objective lens 13 to form a detection point.

In some optional implementations, the first optical element assembly in this embodiment further includes a first half-mirror and a first reflecting mirror, the first half-mirror being disposed on the light-emitting side of the optical attenuation element, for reflecting the first light beam from the excitation light source to the first reflecting mirror, and transmitting the second light beam reflected by the first reflecting mirror; the first reflector is arranged on the light incident side of the focusing element and one side of the first half-reflecting mirror and is used for reflecting the first light beam reflected by the first half-reflecting mirror to the focusing element and reflecting the second light beam from the sample stage to the first half-reflecting mirror.

Illustratively, as shown in fig. 2, a first half mirror 15 is disposed on the light-emitting side of the optical shaping element and on one side of the first reflecting mirror 16, for reflecting the first light beam shaped by the optical shaping element to the first reflecting mirror 16, and transmitting the second light beam reflected by the first reflecting mirror 16; the first reflecting mirror 16 is disposed on the light incident side of the first objective lens 13 and on one side of the first half mirror 15, and is configured to reflect the first light beam reflected by the first half mirror 15 to the first objective lens 13 and reflect the second light beam from the sample stage to the first half mirror 15.

Specifically, as shown in fig. 2, by reasonably setting the placement positions and placement angles of the first half-mirror 15 and the first reflecting mirror 16, the first light beam emitted from the laser component 14 reaches the first half-mirror 15, is reflected by the first half-mirror 15 and reaches the first reflecting mirror 16, then the first light beam is reflected by the first reflecting mirror 16 to reach the first objective lens 13, is focused by the first objective lens 13 onto the surface of the semiconductor material sample 12 placed on the sample stage 11, so that the semiconductor material sample 12 is photoluminescent by the focused first light beam, and part of the light in the first light beam is reflected by the surface of the semiconductor material sample 12 without photoluminescence, thereby forming a second light beam, and the second light beam reaches the first reflecting mirror 16 again, is reflected by the first reflecting mirror 16 to the first half-mirror 15, and is transmitted through the first half-mirror 15.

In some alternative implementations, the spectral measurement system in this embodiment further comprises a chamber, a temperature control unit, and a pressure control unit, wherein: the cavity is used for setting a sample table; the temperature control unit is arranged in the cavity or at one side of the cavity and is used for controlling the temperature in the cavity; the pressure control unit is communicated with the chamber and is used for adjusting the pressure in the chamber.

Specifically, a two-dimensional semiconductor material sample can be placed on a bearing component in the cavity, then a sealing space is formed in the cavity, so that the cavity is vacuumized through a vacuumizing component, a vacuum state is formed in a strong chamber, then the vacuum environment in the cavity is cooled through a cooling component positioned in or outside the cavity, the two-dimensional semiconductor material sample positioned in the cavity is cooled to 3-350K, the influence of thermal motion of a two-dimensional material crystal on the process of returning to a low energy state and simultaneously emitting photons after the thermal motion of the two-dimensional material crystal is transited to an excited state with higher energy level can be effectively reduced, the interference of noise is reduced, and the signal to noise ratio and the accuracy of photoluminescence spectrum signals are improved.

In the related art, the method for measuring photoluminescence of two-dimensional semiconductor materials is mainly to measure at normal temperature, but due to the physical properties of many two-dimensional semiconductor materials, the measured photoluminescence spectrum is weak, the noise is strong, and the spectrum is submerged in the noise, so that certain types of two-dimensional semiconductor materials cannot be measured. And many two-dimensional materials have smaller sizes, and some are only a few micrometers in size, so that the measurement equipment has higher requirements on size and precision. The photoluminescence spectrum of the two-dimensional material is measured by utilizing the low-temperature environment formed after vacuum and cooling treatment, so that the influence of thermal motion of a two-dimensional material crystal on the process of returning to a low-energy state and simultaneously emitting photons after photons transition to an excited state with a higher energy level can be effectively reduced, noise interference is reduced, the photoluminescence spectrum of a two-dimensional material type which cannot be obtained in a normal temperature state can be further obtained, the two-dimensional material is limited by noise and other conditions, and the photoluminescence spectrum of more two-dimensional materials with different types can be effectively measured. Therefore, the problems that the photoluminescence spectrum measured by the two-dimensional material photoluminescence method in the related technology is weak and the noise is strong can be solved, and the effect of improving the signal-to-noise ratio and the accuracy of photoluminescence spectrum signals is achieved.

In the above alternative embodiment, as shown in fig. 2, the sample stage 11 may be disposed in the chamber 10, and the spectrum measuring system may further include a first driving device and a second control module (not shown in the first driving device and the second control module), wherein: the sample stage 11 has a carrying surface for carrying a sample 12 of semiconductor material; the first driving device is connected with the sample stage 11 and is used for driving the sample stage 11 to move and lift in the horizontal direction, wherein the horizontal direction is any direction parallel to the bearing surface; the second control module is electrically connected with the first driving device and is used for controlling the first driving device to drive the movement and the lifting of the sample stage 11.

Specifically, the semiconductor material in this embodiment may be a two-dimensional material, and the two-dimensional material sample may be obtained by mechanically peeling off a three-dimensional material, which may result in a three-dimensional material in which a residual portion is not peeled off in the two-dimensional material sample, that is, the two-dimensional material sample includes both a two-dimensional material portion and a three-dimensional material portion. For the two-dimensional material sample, not any point can be used for photoluminescence spectrum detection of the two-dimensional material, so that the first light beam emitted by the laser component needs to be irradiated to a two-dimensional material part in the two-dimensional material sample, namely a target area in the two-dimensional material sample, and in the embodiment, the first driving device can drive the sample stage to move and lift in the horizontal direction so as to enable the first light beam to focus on the target area, thereby realizing photoluminescence spectrum detection of the two-dimensional material in the two-dimensional material sample.

Further, the two-dimensional material sample has a smaller size, and can be adsorbed on a substrate having a larger size when mechanically peeled, so that when the two-dimensional material sample is placed on the sample stage, the substrate having the two-dimensional material sample adsorbed thereon can be placed on the carrying surface of the sample stage, and a fixing member such as a jig can be attached to the carrying surface of the sample stage, so that the substrate can be fixed on the sample stage by the fixing member.

The cooling component and the bearing component can be components in low-temperature equipment, and the low-temperature equipment can be low-temperature instrument equipment with a model of Crosstation C2 manufactured by Montana Instruments company, wherein the low-temperature adjustment range is 3-350K, the temperature stability is less than 10mK, and the vibration stability is less than 5nm. The low-temperature equipment consists of a low-temperature objective lens, a sample displacement table and the like. The sample displacement table is mainly used for fixing a sample and adjusting the horizontal and pitching directions of the sample by moving different positions so as to adjust the light path.

In some optional implementations, the spectrum measurement unit in this embodiment includes a spectrometer, where the spectrometer is disposed on one side of the sample stage, and is configured to generate a photoluminescence spectrum from the photoluminescence-formed outgoing light; the optical filter component is arranged on the light incident side of the spectrometer and is used for transmitting light with a specific wavelength, wherein the emergent light formed by photoluminescence has the specific wavelength.

Specifically, as shown in fig. 2, the second light beam reflected by the semiconductor material sample 12 from the sample stage first reaches the optical filter assembly 17, and the optical filter assembly 17 filters out light rays except for light formed by photoluminescence in the second light beam, so that the remaining second light beam is collected by the spectrometer 18 to generate a photoluminescence spectrum.

For example, the above-mentioned spectrometer is a spectrometer manufactured by HORIBA corporation, model iHR, whose optical path design and flat-field optical element obtain excellent image quality, resolution and flux not only in the length direction of the exit slit but also in the dispersion direction along the focal plane, and the spectrometer maintains high resolution and multi-channel measurement capability in a wide wavelength range because each wavelength of the point light source on the entrance slit is well reproduced at the focal plane.

In the above-mentioned optional implementation manner, the spectrum measurement unit in this embodiment further includes a light shielding component, where the light shielding component is disposed on the light incident side of the spectrometer, and the light shielding component has a through hole corresponding to the detector in the spectrometer, and the through hole is used for emitting light formed by photoluminescence.

As shown in fig. 2, the light shielding component is a light shielding cover 19 sleeved on the outer side of the spectrometer 18, and the light shielding cover 19 is provided with a through hole corresponding to the detector in the spectrometer 18, so that the second light beam filtered by the optical filtering component 17 enters the detector through the through hole, and other light can be blocked from entering the spectrometer to a great extent by using the shielding effect of the light shielding cover 19, so that interference of other light sources except photoluminescence finally entering the spectrometer 18 is reduced, and the spectrometer 18 achieves better measurement effect.

In the above optional implementation manner, the spectrum measuring unit in this embodiment further includes a second optical element assembly, where the second optical element assembly is disposed on the light emitting side of the optical filter assembly and the light entering side of the spectrometer, and is configured to adjust the optical path of the second light beam so that the second light beam is incident into the spectrometer.

Illustratively, as shown in fig. 2, the second optical element assembly may include a second mirror 20, where the second mirror 20 is capable of reflecting to adjust the optical path of the second light beam passing through the optical filter assembly 17 to cause the second light beam to enter the spectrometer 18 to generate a photoluminescence spectrum.

The spectrum measurement system in this embodiment may further include an image acquisition unit disposed on one side of the sample stage, for acquiring an image of a target area in the semiconductor material sample placed on the sample stage, where the target area includes a measurement point.

In some alternative embodiments, the image acquisition unit comprises an illumination light source assembly and a camera assembly, wherein: the illumination light source component is arranged on one side of the sample stage and is used for providing illumination light beams for the semiconductor material sample on the sample stage; the camera assembly is arranged on one side of the sample stage and is used for receiving the illumination light beam reflected by the target area and generating an image of the target area according to the illumination light beam.

Illustratively, as shown in fig. 2, in the case that the laser assembly 14 does not emit the first light beam or the first light beam emitted from the laser assembly 14 is blocked, the illumination light beam provided by the illumination light source assembly is reflected by the first half mirror 15 and the first mirror 16, reaches the first objective lens 13, is focused onto the semiconductor material sample 12 on the sample stage 11 through the first objective lens 13, is reflected by the first mirror 16, passes through the first half mirror 15, and is finally received by the camera assembly 21, so that an image of a partial region of the semiconductor material sample 12 is acquired by the camera assembly 21. The camera assembly 21 may then be enabled to acquire an image of a target area in the semiconductor material sample 12 and mark the target area by controlling the movement of the sample stage 11 in a horizontal direction. And then removing the illumination light source assembly or turning off the illumination light source assembly, so that the laser assembly 14 continuously emits the first light beam, and the first light beam can be returned to the first half-mirror 15 along the original path of the incident light path after being vertically reflected on the semiconductor material sample by adjusting the direction of the first mirror 16 and controlling the lifting of the sample stage 11. The first beam is then blocked by the blocking assembly and the illumination source is allowed to emit an illumination beam, and the sample stage 11 is then adjusted in the horizontal direction to move the target area to the marking position.

In order to achieve shielding of the laser assembly from the first light beam, in the above-mentioned alternative embodiment, the image acquisition unit may further comprise a shielding assembly, a second driving means and a third control module, wherein: the shielding component is arranged on the light emitting side of the excitation light source; the second driving device is connected with the shielding assembly and used for driving the shielding assembly to shield the first light beam emitted by the excitation light source; the third control module is electrically connected with the second driving device and used for controlling the second driving device to drive the shielding assembly to shield the first light beam.

Specifically, the excitation light source may be a laser component, and the third control module controls the second driving device to drive the shielding component to shield the first light beam emitted by the laser under the condition that the first light beam is emitted by the laser component.

In the above-described alternative embodiment, the spectrum measuring system further includes a third optical element assembly disposed on one side of the first optical element assembly and on the light incident side of the camera assembly, for adjusting the optical path of the illumination beam reflected by the target area so that the illumination beam is incident into the camera assembly. The camera component is used for assisting in observing the condition of the semiconductor material sample, so that a laser spot of the laser can conveniently hit a position to be measured, and the camera component can be connected with the display device, thereby being convenient for observing the condition of the semiconductor material sample in real time.

Illustratively, as shown in fig. 2, the third optical element assembly includes a second half mirror 22 and a third reflecting mirror 23, where: the second half mirror 22 is disposed between the first optical element assembly and the optical filter assembly 17, and is configured to transmit the second light beam from the first optical element assembly and reflect the illumination light beam from the first optical element assembly to the third mirror 23; the third reflecting mirror 23 is provided at one side of the second half mirror 22 and the light incident side of the camera assembly 21 for reflecting the illumination light beam from the third reflecting mirror 23 into the camera assembly 21.

Specifically, as shown in fig. 2, by reasonably setting the placement positions and placement angles of the second half-mirror 22 and the third mirror 23, the illumination beam returned from the original path on the sample stage 11 reaches the second half-mirror 22 and reaches the third mirror 23 after being reflected by the second half-mirror 22, and the third mirror 23 reflects the illumination beam into the camera assembly 21, so that an image of a partial region of the semiconductor material sample 12 is acquired by the camera assembly 21. Further, as shown in fig. 2, a fifth lens 24 and a sixth lens 25 may be further disposed between the third reflecting mirror 23 and the camera assembly 21, so as to enable more light rays in the illumination beam reflected by the third reflecting mirror to enter the camera assembly.

The second half-reflecting mirror and the third reflecting mirror can be further applied to the optical path of the second light beam entering the spectrometer, the second light beam reflected by the semiconductor material sample 12 on the sample stage 11 reaches the second half-reflecting mirror first, and reaches the optical filtering component after passing through the second half-reflecting mirror, the optical filtering component filters the light rays except the light formed by photoluminescence in the second light beam, and the rest of the second light beam reaches the third reflecting mirror and is reflected by the third reflecting mirror into the spectrometer, so that the light rays reflected into the spectrometer are the light rays passing through the semiconductor material sample for photoluminescence.

In some alternative embodiments, the illumination source assembly includes an illumination source and a fourth optical element assembly, wherein: the illumination light source is used for providing an illumination light beam; the fourth optical element assembly is arranged on the light emitting side of the illumination light source and the light entering side of the first optical element assembly and is used for adjusting the light path of the illumination light beam so that the illumination light beam irradiates the semiconductor material sample on the sample stage.

Specifically, the fourth optical element assembly may include a third lens, a fourth lens, and a third half mirror, wherein: the third lens is arranged on the light emitting side of the illumination light source and is used for focusing the illumination light beam from the illumination light source to the fourth lens; the fourth lens is arranged on the light emergent side of the third lens and is used for parallelly emergent focused illumination light beams; the third half-transmitting half-reflecting mirror is arranged on the light-emitting side of the fourth lens and is used for reflecting the illumination light beam from the fourth lens to the focusing element and transmitting the second light beam from the first optical element assembly.

Illustratively, as shown in fig. 2, in the case that the laser assembly 14 does not emit the first light beam or the first light beam emitted from the laser assembly 14 is blocked, the illumination light beam provided by the illumination light source 21 (such as a flashlight) in the illumination light source assembly sequentially passes through the third lens 34, the fourth lens 35 and the third half mirror 36, is reflected by the third half mirror 36 and the first mirror 16, reaches the first objective lens 13, is focused onto the semiconductor material sample 12 of the sample stage 11 through the first objective lens 13, is reflected by the first mirror 16, passes through the third half mirror 36, and is finally received by the camera assembly 21, so that an image of a partial region of the semiconductor material sample 12 is acquired through the camera assembly 21.

It should be noted that, in the system shown in fig. 2 in this embodiment, some other optional devices or components may be used, for example, various focusing lenses, a half-wave plate for adjusting laser power, etc., which is not limited in this embodiment.

The photoluminescence spectrum measurement procedure applied in the system will be further described below in connection with the spectrum measurement system in fig. 2, and as shown in fig. 3, the measurement procedure may include:

(1) After the optical path shown in fig. 2 is constructed, the system is used to measure, according to the optical band gaps of different sample materials, and excitation light with a suitable wavelength is selected to excite the two-dimensional material, and taking the semiconductor material sample 12 as tin disulfide as an example, laser light emitted by a solid laser with the model LDM405 manufactured by the company of cable Lei Bo can be used as excitation light, namely, a first light beam, in the laser assembly 14, the output wavelength of the first light beam is 405 nm, the stability of the first light beam is 0.01 dB, and the maximum power of the first light beam is 4 mW.

(2) A two-dimensional material sample 12 is placed in a chamber 10 (such as a cryogenic device), the two-dimensional material sample 12 is fixed on a sample stage 11, and after the first objective lens 13 is installed, the inlet of the chamber 10 is closed, so that the sealing is complete. The chamber 10 is then evacuated and finally the chamber 10 is cooled to 10K.

(3) The solid laser is turned on, the shielding component shields the first light beam emitted by the solid laser, the illumination light source component is placed on one side of the laser component 14, the lifting of the sample stage 11 is regulated, the illumination light beam of the laser component 14 sequentially passes through the third lens 34, the fourth lens 35 and the third half-reflecting mirror 36, is reflected by the first reflecting mirror 16 after passing through the first half-reflecting mirror 15, is focused on the sample through the first objective lens 13 until the sample observed through the camera component 21 shows a clear image on the display device, and then the position of a target area in the sample 12 to be two-dimensional material, namely the position of a measuring point, is found by regulating the horizontal movement of the sample stage 11, and a red circle is marked.

(4) The shielding assembly is removed, the first light beam is focused after passing through the first lens 31, then passes through the second lens 32, the emergent first light beam is a parallel light beam, the parallel emergent first light beam passes through the optical attenuation sheet 33 to weaken the light intensity, the first light beam with weakened light intensity vertically irradiates the first objective lens 13 after passing through the first half-reflecting mirror 15 and the first reflecting mirror 16, and the incident light can be returned to the first half-reflecting mirror 15 along the original path of the incident light path after vertically striking the two-dimensional material sample 12 by adjusting the reflecting direction of the first reflecting mirror 13 and the lifting of the sample stage 11.

(5) The first beam is then blocked by a blocking assembly and an illumination source assembly is placed between the laser assembly 14 and the first half mirror 15, and the sample stage 11 is then adjusted in the horizontal direction to move the position of the point to be measured onto the marked red circle.

(6) The illumination light source assembly and the shielding assembly are removed, the spectrometer 18 is covered by the shielding cover 19, only one small hole is reserved on the shielding cover 19, the second light beam can enter the detector of the spectrometer 18, the reflected light of the excitation light reflected by the sample is guided into the detector along the small hole through the second reflecting mirror 20 arranged in front of the detector, the optical filtering assembly 17 can be not arranged in front of the spectrometer 18, and the position of the light entering the detector of the spectrometer can be optimized by adjusting the pitching of the second reflecting mirror 20, so that the light detected by the spectrometer 18 is maximized.

(7) An optical filter assembly 17 is placed in front of the spectrometer 18 and after the second light beam passes through the optical filter assembly 17, the light beam photoluminescent through the two-dimensional material sample 12 enters the spectrometer 18 detection entrance. A suitable filter may be selected to filter out 405 nm excitation light, in addition to the photoluminescent light beam, for a two-dimensional material sample 12 of tin disulfide, a model NF405 filter manufactured by the company cable Lei Bo may be used to filter out only the photoluminescent light beam into the spectrometer.

(8) According to the properties of the two-dimensional material sample 12, the measurement parameters of the suitable spectrometer 18 are set, the photoluminescence spectrum of the two-dimensional material at low temperature is measured, and for the two-dimensional material sample 12, the photoluminescence spectrum of the tin disulfide, namely the relation between the relative intensity and the wavelength of light, as shown in fig. 4 can be obtained.

By adopting the system in the embodiment, the photoluminescence spectrum of the two-dimensional material is measured by utilizing vacuum and low-temperature environments, so that the influence of the thermal motion of the two-dimensional material crystal on the process of returning to a low-energy state and simultaneously emitting photons after photons transit to an excited state with a higher energy level can be effectively reduced, the interference of noise is reduced, and the signal to noise ratio and the accuracy of photoluminescence spectrum signals are improved. Furthermore, the light spot size of the excitation light at low temperature can be minimized to 2 μm, and the photoluminescence spectrum of a two-dimensional material with a size of more than 5 μm can be effectively measured. Through the cooperation of the filtering effect of the optical filtering component and the shielding effect of the shading and renting, excitation light and other light can be filtered and shielded to the greatest extent and enter the spectrometer, interference of other light sources except photoluminescence finally entering the spectrometer is reduced, and the spectrometer achieves a better measuring effect. Through specific setting of camera subassembly and light path adjustment, make the camera subassembly can accurate observation sample's position, excitation light's position and size, conveniently adjust excitation light focus and accurate measurement sample position to be measured.

According to another embodiment of the present application, there is provided a spectrum measuring method of a semiconductor material, which is applied to the spectrum measuring system of a semiconductor material in the foregoing embodiment.

The method embodiments provided in the embodiments of the present application may be performed in a mobile terminal, a computer terminal or similar computing device. Taking a mobile terminal as an example, fig. 5 is a block diagram of a hardware structure of the mobile terminal according to a method for measuring spectrum of semiconductor material according to an embodiment of the present application. As shown in fig. 5, the mobile terminal may include one or more processors 102 (only one is shown in fig. 5) (the processor 102 may include, but is not limited to, a microprocessor MCU, a programmable logic device FPGA, etc. processing means) and a memory 104 for storing data, wherein the mobile terminal may further include a transmission device 106 for communication functions and an input-output device 108. It will be appreciated by those skilled in the art that the structure shown in fig. 5 is merely illustrative and not limiting of the structure of the mobile terminal described above. For example, the mobile terminal may also include more or fewer components than shown in fig. 5, or have a different configuration than shown in fig. 5.

The memory 104 may be used to store a computer program, for example, a software program of application software and a module, such as a computer program corresponding to a method for spectrum measurement of semiconductor material in an embodiment of the present application, and the processor 102 executes the computer program stored in the memory 104 to perform various functional applications and data processing, that is, to implement the above-mentioned method. Memory 104 may include high-speed random access memory, and may also include non-volatile memory, such as one or more magnetic storage devices, flash memory, or other non-volatile solid-state memory. In some examples, the memory 104 may further include memory remotely located relative to the processor 102, which may be connected to the mobile terminal via a network. Examples of such networks include, but are not limited to, the internet, intranets, local area networks, mobile communication networks, and combinations thereof.

The transmission device 106 is used to receive or transmit data via a network. Specific examples of the network described above may include a wireless network provided by a communication provider of the mobile terminal. In one example, the transmission device 106 includes a network adapter (Network Interface Controller, simply referred to as NIC) that can connect to other network devices through a base station to communicate with the internet. In one example, the transmission device 106 may be a Radio Frequency (RF) module, which is configured to communicate with the internet wirelessly.

In this embodiment, there is provided a method for measuring a spectrum of a semiconductor material operating on the mobile terminal, and fig. 6 is a flowchart of a method for measuring a spectrum of a semiconductor material according to an embodiment of the present application, as shown in fig. 6, the flowchart includes the following steps:

step S202, in the case that the semiconductor material sample is placed on a sample stage in the spectrum measuring system, controlling an excitation light source in the spectrum measuring system to provide a first light beam for exciting the semiconductor material sample so that the first light beam is focused to a measuring point on the semiconductor material sample to form a second light beam, wherein the second light beam comprises emergent light formed by photoluminescence of the semiconductor material sample under the irradiation of the first light beam;

step S204, receiving a photoluminescence spectrum generated by a spectrum measuring unit in the spectrum measuring system, wherein the spectrum measuring unit is used for receiving the second light beam and generating a photoluminescence spectrum corresponding to the measuring point according to the second light beam.

Through the steps, the first optical element assembly in the adopted spectrum measuring system at least comprises the optical shaping element, the optical attenuation element and the focusing element which are sequentially arranged on the optical path of the first light beam, and the first light beam can be focused to the spot size of the measuring point by the first optical element assembly to be smaller than one half of the size of the semiconductor material sample, so that the measurement accuracy of the photoluminescence spectrum of the semiconductor material with smaller size can be effectively improved; in particular, the two-dimensional materials in the semiconductor materials are smaller in size, some of the two-dimensional materials are only a few micrometers in size, and the requirements on the size and the precision of the measuring equipment are higher, but by adopting the spectrum measuring system disclosed by the application, the light path can be adjusted through the first optical element assembly, so that the light spot size of an excitation light source focused to a measuring point is minimum to 2 micrometers, and the photoluminescence spectrum of the two-dimensional semiconductor materials with the size of more than 5 micrometers can be effectively measured. Therefore, the spectrum measuring system can solve the problem that the semiconductor material has larger measuring difficulty of photoluminescence spectrum due to smaller size in the related technology, and realize the effect of accurately measuring the photoluminescence spectrum of the semiconductor material with smaller size.

The excitation light source may further include a laser assembly including a plurality of lasers for emitting laser light at different wavelengths, where in some alternative embodiments controlling the excitation light source in the spectral measurement system to provide a first beam of light that excites the semiconductor material sample includes: receiving a detection signal corresponding to a semiconductor material sample; analyzing the detection signal to obtain detection information corresponding to the semiconductor material sample, wherein the detection information comprises the band gap of the semiconductor material sample; based on the detection information, a first control signal is generated such that the laser assembly outputs a first light beam having an energy greater than a bandgap of the semiconductor material sample based on the first control signal.

In the above alternative embodiment, the band gap of the semiconductor material sample to be tested is obtained by detecting the semiconductor material sample, so that the laser output of the laser component can be controlled to be larger than the band gap, and the corresponding excitation light can be selected based on the types of different semiconductor material samples, so that the excitation light source in the method of the embodiment is more flexible to select, and the method can be applied to obtaining photoluminescence spectra of various test objects.

The spectrum measuring system can further comprise an image collecting unit and a first driving device, wherein the image collecting unit is arranged on one side of the sample table, and the first driving device is connected with the sample table. At this time, in some optional implementations, the spectrum measurement method in this embodiment further includes: acquiring an image of a partial region of the semiconductor material sample acquired by the image acquisition unit; and generating a second control signal according to the image of the partial region and a preset image, so that the first driving device controls the sample stage to horizontally move to a first target position according to the second control signal, wherein the preset image is a complete image of the surface to be detected of the semiconductor material sample, and the image acquired by the image acquisition unit is an image of the target region in the semiconductor material sample under the condition that the sample stage moves to the first target position.

Specifically, taking the semiconductor material sample as a two-dimensional material in this embodiment as an example, the two-dimensional material sample may be obtained by mechanically peeling off a three-dimensional material, which may result in a three-dimensional material in which a residual portion is not peeled off in the two-dimensional material sample, that is, the two-dimensional material sample includes both a two-dimensional material portion and a three-dimensional material portion. For the two-dimensional material sample, not any point can be used for photoluminescence spectrum detection of the two-dimensional material, so that the first light beam emitted by the laser component needs to be irradiated to a two-dimensional material part in the two-dimensional material sample, namely a target area in the two-dimensional material sample, and in the embodiment, the first driving device can drive the sample stage to move and lift in the horizontal direction so as to enable the first light beam to focus on the target area, thereby realizing photoluminescence spectrum detection of the two-dimensional material in the two-dimensional material sample.

The spectrum measurement system can further comprise an illumination light source assembly, a camera assembly, a shielding assembly and a second driving device, wherein the illumination light source assembly and the camera assembly are arranged on one side of the sample table, the shielding assembly is arranged on the light emitting side of the excitation light source, the second driving device is connected with the shielding assembly, and the third control module is electrically connected with the second driving device. At this time, in some alternative embodiments, acquiring an image of a partial region of the semiconductor material sample acquired by the image acquisition unit includes: outputting a third control signal to the second driving device so that the second driving device drives the shielding assembly to shield the first light beam according to the third control signal; outputting an on signal to the illumination light source such that the illumination light source irradiates the illumination light beam to a partial region of the semiconductor material sample with the first light beam being blocked by the blocking assembly, wherein the camera assembly is configured to receive the illumination light beam reflected by the partial region and generate an image of the partial region from the illumination light beam.

Specifically, under the condition that the shielding component is driven to shield the first light beam emitted by the laser component, the illumination light beam provided by the illumination light source component is focused on the semiconductor material sample on the sample stage, and after the illumination light beam reflected by the semiconductor material sample passes through the reasonably arranged optical element to adjust the light path, the illumination light beam is received by the camera component, so that an image of a part of the area of the semiconductor material sample is acquired through the camera component.

In the above alternative embodiment, generating the second control signal according to the image of the partial area and the preset image may include: acquiring a preset image, wherein the preset image is provided with a first pixel area corresponding to a target area; determining a second pixel area corresponding to the image of the partial area in the preset image; generating displacement information according to a first position of a first pixel area in a preset image and a second position of a second pixel area in the preset image, wherein the displacement information comprises displacement parameters of a sample stage in a horizontal direction, the horizontal direction is any direction parallel to a bearing surface of the sample stage, and the displacement parameters correspond to the distance between the first position and the second position; and generating a second control signal according to the displacement information.

Specifically, the actual size of the semiconductor material sample can be obtained first, then the semiconductor material sample is photographed to obtain a complete image of the semiconductor material sample and stored as a preset image, then after the image of the partial area is obtained, a second pixel area corresponding to the image of the partial area in the preset image is determined, and the relationship between the first pixel area corresponding to the target area in the preset image and the position of the second pixel area is judged, so that the displacement of the target area can be obtained by the camera assembly after the displacement of the sample platform is determined according to the actual size of the semiconductor material sample and the position relationship between the first pixel area and the second pixel area, and a second control signal is generated to enable the driving device to control the horizontal movement of the sample platform to reach the target position according to the second control signal.

In some alternative embodiments, the spectroscopic measurement method further comprises: outputting a fourth control signal and a closing signal under the condition that the sample stage moves to the first target position, so that the second driving device drives the shielding component to release shielding of the first light beam according to the fourth control signal, and the illumination light source component stops irradiating the illumination light beam according to the closing signal; acquiring light spot information corresponding to the first light beam, wherein the light spot information comprises the light spot size of the first light beam irradiated onto the target area; and generating a fourth control signal according to the light spot information and the preset light spot size, so that the first driving device controls the sample stage to vertically move to the second target position according to the fourth control signal, wherein the light spot size of the first light beam irradiated to the target area is the same as the preset light spot size under the condition that the sample stage moves to the second target position, and the preset light spot size is smaller than one half of the size of the semiconductor material sample.

Specifically, in the case that the semiconductor material sample includes a smaller semiconductor material portion, in order to enable the first light beam to generate the photoluminescence spectrum of the semiconductor material type more accurately, a preset light spot size may be set first, where the preset light spot size has a smaller size, for example, 2 μm, and when it is detected that the light spot size of the first light beam irradiated onto the target area is greater than the preset light spot size, the driving device may be controlled to automatically adjust the sample stage by outputting a control signal, so as to adjust the light spot size of the first light beam irradiated onto the target area, so that the light spot size can meet the preset light spot size.

From the description of the above embodiments, it will be clear to a person skilled in the art that the method according to the above embodiments may be implemented by means of software plus the necessary general hardware platform, but of course also by means of hardware, but in many cases the former is a preferred embodiment. Based on such understanding, the technical solution of the present application may be embodied essentially or in a part contributing to the prior art in the form of a software product stored in a storage medium (e.g. ROM/RAM, magnetic disk, optical disk) comprising several instructions for causing a terminal device (which may be a mobile phone, a computer, a server, or a network device, etc.) to perform the method of the various embodiments of the present application.

The embodiment also provides a device for measuring the spectrum of the semiconductor material, which is applied to the spectrum measuring system of the semiconductor material, and the device is used for realizing the embodiment and the preferred implementation mode, and is not described again. As used below, the term "module" may be a combination of software and/or hardware that implements a predetermined function. While the means described in the following embodiments are preferably implemented in software, implementation in hardware, or a combination of software and hardware, is also possible and contemplated.

Fig. 7 is a block diagram of a spectrum measuring apparatus for semiconductor material according to an embodiment of the present application, as shown in fig. 7, the apparatus including:

a control module 302 for controlling an excitation light source in the spectroscopic measurement system to provide a first light beam for exciting the semiconductor material sample in case the semiconductor material sample is placed on a sample stage in the spectroscopic measurement system such that the first light beam is focused to a measurement point on the semiconductor material sample to form a second light beam comprising an outgoing light of the semiconductor material sample formed by photoluminescence under irradiation of the first light beam;

the receiving module 304 is configured to receive a photoluminescence spectrum generated by a spectrum measurement unit in the spectrum measurement system, where the spectrum measurement unit is configured to receive the second light beam, and generate a photoluminescence spectrum corresponding to the measurement point according to the second light beam.

By the above module, the first optical element assembly in the spectrum measurement system at least comprises an optical shaping element, an optical attenuation element and a focusing element which are sequentially arranged on the optical path of the first light beam, so that the control module 302 controls the excitation light source in the spectrum measurement system to provide the first light beam for exciting the semiconductor material sample, the first light beam can be focused to the spot size of the measurement point by the first optical element assembly to be smaller than one half of the size of the semiconductor material sample, and thus the photoluminescence spectrum is received by the receiving module 304, and the measurement accuracy of the photoluminescence spectrum of the semiconductor material with smaller size can be effectively improved; in particular, the two-dimensional materials in the semiconductor materials are smaller in size, some of the two-dimensional materials are only a few micrometers in size, and the requirements on the size and the precision of the measuring equipment are higher, but by adopting the spectrum measuring system disclosed by the application, the light path can be adjusted through the first optical element assembly, so that the light spot size of an excitation light source focused to a measuring point is minimum to 2 micrometers, and the photoluminescence spectrum of the two-dimensional semiconductor materials with the size of more than 5 micrometers can be effectively measured. Therefore, the spectrum measuring system can solve the problem that the semiconductor material has larger measuring difficulty of photoluminescence spectrum due to smaller size in the related technology, and realize the effect of accurately measuring the photoluminescence spectrum of the semiconductor material with smaller size.

It should be noted that each of the above modules may be implemented by software or hardware, and for the latter, it may be implemented by, but not limited to: the modules are all located in the same processor; alternatively, the above modules may be located in different processors in any combination.

The excitation light source may further include a laser assembly including a plurality of lasers for emitting laser light at different wavelengths, where, in some alternative embodiments, the control module 302 includes: a receiving sub-module for receiving a detection signal corresponding to the semiconductor material sample; the analysis submodule is used for analyzing the detection signal to obtain detection information corresponding to the semiconductor material sample, wherein the detection information comprises the band gap of the semiconductor material sample; and the first generation submodule is used for generating a first control signal according to the detection information so that the laser component outputs a first light beam with energy larger than the band gap of the semiconductor material sample according to the first control signal.

The spectrum measuring system can further comprise an image collecting unit and a first driving device, wherein the image collecting unit is arranged on one side of the sample table, and the first driving device is connected with the sample table. At this time, in some optional implementations, the spectrum measurement apparatus in this embodiment further includes: the acquisition module is used for acquiring the image of the partial area of the semiconductor material sample acquired by the image acquisition unit; the generation module is used for generating a second control signal according to the image of the partial area and a preset image, so that the driving device controls the sample stage to horizontally move to a first target position according to the second control signal, wherein the preset image is a complete image of the surface to be detected of the semiconductor material sample, and the image acquired by the image acquisition unit is an image of the target area in the semiconductor material sample under the condition that the sample stage moves to the first target position.

The spectrum measurement system can further comprise an illumination light source assembly, a camera assembly, a shielding assembly and a second driving device, wherein the illumination light source assembly and the camera assembly are arranged on one side of the sample table, the shielding assembly is arranged on the light emitting side of the excitation light source, the second driving device is connected with the shielding assembly, and the third control module is electrically connected with the second driving device. At this time, in some optional embodiments, the acquiring module includes: the first output sub-module is used for outputting a third control signal to the second driving device so that the second driving device drives the shielding assembly to shield the first light beam according to the third control signal; and the second output sub-module is used for outputting an opening signal to the illumination light source under the condition that the shielding assembly shields the first light beam so that the illumination light source irradiates the illumination light beam to a partial area of the semiconductor material sample, wherein the camera assembly is used for receiving the illumination light beam reflected by the partial area and generating an image of the partial area according to the illumination light beam.

In the above alternative embodiment, the second generating module may include: the first acquisition sub-module is used for acquiring a preset image, wherein the preset image is provided with a first pixel area corresponding to the target area; determining a second pixel area corresponding to the image of the partial area in the preset image; the second generation submodule is used for generating displacement information according to a first position of the first pixel region in a preset image and a second position of the second pixel region in the preset image, wherein the displacement information comprises displacement parameters of the sample stage in the horizontal direction, the horizontal direction is any direction parallel to a bearing surface of the sample stage, and the displacement parameters correspond to the distance between the first position and the second position; and the third generation sub-module is used for generating a second control signal according to the displacement information.

In some alternative implementations, the spectrum measuring apparatus in this embodiment further includes: the third output sub-module is used for outputting a fourth control signal and a closing signal under the condition that the sample stage moves to the first target position, so that the second driving device drives the shielding component to release shielding of the first light beam according to the fourth control signal, and the illumination light source component stops irradiating the illumination light beam according to the closing signal; the second acquisition submodule is used for acquiring light spot information corresponding to the first light beam, wherein the light spot information comprises the light spot size of the first light beam irradiated onto the target area; and the fourth generation submodule is used for generating a fourth control signal according to the light spot information and the preset light spot size so that the first driving device controls the sample stage to vertically move to the second target position according to the fourth control signal, wherein the light spot size of the first light beam irradiated to the target area is the same as the preset light spot size under the condition that the sample stage moves to the second target position, and the preset light spot size is smaller than one half of the size of the semiconductor material sample.

Embodiments of the present application also provide a computer readable storage medium having a computer program stored therein, wherein the computer program is arranged to perform the steps of any of the method embodiments described above when run.

In one exemplary embodiment, the computer readable storage medium may include, but is not limited to: a usb disk, a Read-Only Memory (ROM), a random access Memory (Random Access Memory, RAM), a removable hard disk, a magnetic disk, or an optical disk, or other various media capable of storing a computer program.

An embodiment of the application also provides an electronic device comprising a memory having stored therein a computer program and a processor arranged to run the computer program to perform the steps of any of the method embodiments described above.

In an exemplary embodiment, the electronic device may further include a transmission device connected to the processor, and an input/output device connected to the processor.

Specific examples in this embodiment may refer to the examples described in the foregoing embodiments and the exemplary implementation, and this embodiment is not described herein.

It will be appreciated by those skilled in the art that the modules or steps of the application described above may be implemented in a general purpose computing device, they may be concentrated on a single computing device, or distributed across a network of computing devices, they may be implemented in program code executable by computing devices, so that they may be stored in a storage device for execution by computing devices, and in some cases, the steps shown or described may be performed in a different order than that shown or described herein, or they may be separately fabricated into individual integrated circuit modules, or multiple modules or steps of them may be fabricated into a single integrated circuit module. Thus, the present application is not limited to any specific combination of hardware and software.

The above is only a preferred embodiment of the present application, and is not intended to limit the present application, but various modifications and variations can be made to the present application by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the principle of the present application should be included in the protection scope of the present application.

Claims

1. A system for spectral measurement of semiconductor material, comprising:

a sample stage for placing a sample of semiconductor material;

the excitation light source is arranged on one side of the sample stage and is used for providing a first light beam for exciting the semiconductor material sample to the sample stage, the first light beam is used for focusing to a measuring point on the semiconductor material sample to form a second light beam, and the second light beam comprises emergent light formed by photoluminescence of the semiconductor material sample under the irradiation of the first light beam;

a first optical element assembly comprising at least an optical shaping element, an optical attenuation element and a focusing element arranged in sequence on the optical path of the first light beam for focusing the first light beam to a spot size of the measurement point smaller than one half the size of the semiconductor material sample;

And the spectrum measuring unit is arranged at one side of the sample stage and is used for receiving the second light beam and generating a photoluminescence spectrum corresponding to the measuring point according to the second light beam.

2. The spectroscopic measurement system as set forth in claim 1 wherein the excitation light source comprises:

the laser assembly is arranged on one side of the sample table and comprises a plurality of lasers for emitting laser with different wavelengths;

and the first control module is electrically connected with the laser assemblies and used for controlling one laser in the laser assemblies to emit laser so as to provide the first light beam for the sample stage.

3. The spectroscopic measurement system as set forth in claim 2 further comprising:

a chamber for setting the sample stage;

the temperature control unit is arranged in the cavity or at one side of the cavity and is used for controlling the temperature in the cavity;

and the pressure control unit is communicated with the chamber and is used for adjusting the pressure in the chamber.

4. The spectroscopic measurement system as set forth in claim 1 further comprising:

the first driving device is connected with the sample table and used for driving the sample table to horizontally move and lift;

And the second control module is electrically connected with the first driving device and used for controlling the first driving device to drive the movement and the lifting of the sample table.

5. The spectroscopic measurement system as set forth in any one of claims 1 to 4 wherein the optical shaping element comprises a first lens and a second lens wherein:

the first lens is arranged on the light emitting side of the excitation light source and is used for focusing the first light beam from the excitation light source to the first lens;

the second lens is arranged on the light emergent side of the first lens and is used for parallelly emergent focused first light beams.

6. The spectroscopic measurement system as set forth in any one of claims 1 to 4 wherein the first optical element assembly further comprises a first semi-transparent semi-reflective mirror and a first reflective mirror, wherein:

the first half-transmitting half-reflecting mirror is arranged on the light emitting side of the optical attenuation element and is used for reflecting the first light beam from the excitation light source to the first reflecting mirror and transmitting the second light beam reflected by the first reflecting mirror;

the first reflector is arranged on the light incident side of the focusing element and one side of the first half-reflecting mirror, and is used for reflecting the first light beam reflected by the first half-reflecting mirror to the focusing element and reflecting the second light beam from the sample stage to the first half-reflecting mirror.

7. The spectroscopic measurement system as set forth in any one of claims 1 to 4, wherein the spectroscopic measurement unit comprises:

the spectrometer is arranged on one side of the sample table and is used for generating the photoluminescence spectrum from the emergent light formed by photoluminescence;

the optical filter component is arranged on the light inlet side of the spectrometer and is used for transmitting light with a specific wavelength, wherein the emergent light formed by photoluminescence has the specific wavelength.

8. The spectroscopic measurement system of claim 7, wherein the spectroscopic measurement unit further comprises:

the shading component is arranged on the light incident side of the spectrometer and is provided with a through hole corresponding to the detector in the spectrometer, and the through hole is used for emitting light formed by photoluminescence.

9. The spectroscopic measurement system as set forth in claim 7 further comprising:

the second optical element assembly is arranged on the light emitting side of the optical filter assembly and the light entering side of the spectrometer and is used for adjusting the light path of the second light beam so that the second light beam is incident into the spectrometer.

10. The spectroscopic measurement system as set forth in claim 7 further comprising:

The image acquisition unit is arranged on one side of the sample stage and is used for acquiring an image of a target area in the semiconductor material sample placed on the sample stage, wherein the target area comprises the measuring point.

11. The spectroscopic measurement system as set forth in claim 10 wherein the image acquisition unit comprises:

an illumination light source assembly disposed on one side of the sample stage for providing an illumination beam to the semiconductor material sample on the sample stage;

and the camera component is arranged on one side of the sample stage and is used for receiving the illumination light beam reflected by the target area and generating an image of the target area according to the illumination light beam.

12. The spectroscopic measurement system as set forth in claim 11 further comprising:

and the third optical element assembly is arranged on one side of the first optical element assembly and the light incident side of the camera assembly and is used for adjusting the light path of the illumination light beam reflected by the target area so as to enable the illumination light beam to be incident into the camera assembly.

13. The spectroscopic measurement system as recited in claim 12, wherein the third optical element assembly comprises a second semi-transparent semi-reflective mirror and a third reflective mirror, wherein:

The second half-reflecting mirror is arranged between the first optical element assembly and the optical filtering assembly and is used for transmitting the second light beam from the first optical element assembly and reflecting the illumination light beam from the first optical element assembly to the third reflecting mirror;

the third reflector is arranged on one side of the second half-transmitting half-reflecting mirror and the light incident side of the camera component and is used for reflecting the illumination light beams from the third reflector into the camera component.

14. The spectral measurement system of claim 11, wherein the illumination source assembly comprises:

an illumination source for providing the illumination beam;

and the fourth optical element assembly is arranged on the light emitting side of the illumination light source and the light entering side of the first optical element assembly and is used for adjusting the light path of the illumination light beam so that the illumination light beam irradiates the semiconductor material sample on the sample stage.

15. The spectroscopic measurement system of claim 14, wherein the fourth optical element assembly comprises a third lens, a fourth lens and a third semi-transparent semi-reflective mirror, wherein:

the third lens is arranged on the light emitting side of the illumination light source and is used for focusing the illumination light beam from the illumination light source to the fourth lens;

The fourth lens is arranged on the light emergent side of the third lens and is used for parallelly emergent the focused illumination light beams;

the third half-transparent half-reflecting mirror is arranged on the light-emitting side of the fourth lens, and is used for reflecting the illumination light beam from the fourth lens to the focusing element and transmitting the second light beam from the first optical element assembly.

16. The spectroscopic measurement system as set forth in claim 11 wherein the image acquisition unit further comprises:

the shielding component is arranged on the light emitting side of the excitation light source;

the second driving device is connected with the shielding assembly and used for driving the shielding assembly to shield the first light beam emitted by the excitation light source;

and the third control module is electrically connected with the second driving device and used for controlling the second driving device to drive the shielding assembly to shield the first light beam.

17. A method of spectral measurement of a semiconductor material, characterized in that it is applied in a system for spectral measurement of a semiconductor material according to any one of claims 1 to 16, the method comprising:

controlling an excitation light source in the spectroscopic measurement system to provide a first light beam exciting the semiconductor material sample with the semiconductor material sample placed on a sample stage in the spectroscopic measurement system such that the first light beam is focused to a measurement point on the semiconductor material sample to form a second light beam comprising an outgoing light of the semiconductor material sample formed by photoluminescence under irradiation of the first light beam;

And receiving a photoluminescence spectrum generated by a spectrum measurement unit in the spectrum measurement system, wherein the spectrum measurement unit is used for receiving the second light beam and generating the photoluminescence spectrum corresponding to the measurement point according to the second light beam.

18. The spectroscopic measurement method as set forth in claim 17 wherein the excitation light source includes a laser assembly including a plurality of lasers for emitting laser light of different wavelengths, the controlling the excitation light source in the spectroscopic measurement system to provide the first beam of light that excites the semiconductor material sample comprising:

receiving a detection signal corresponding to the semiconductor material sample;

analyzing the detection signal to obtain detection information corresponding to the semiconductor material sample, wherein the detection information comprises the band gap of the semiconductor material sample;

a first control signal is generated in accordance with the detection information such that the laser assembly outputs the first beam of light having energy greater than the bandgap of the semiconductor material sample in accordance with the first control signal.

19. The spectroscopic measurement method as set forth in claim 17, wherein the spectroscopic measurement system further comprises an image acquisition unit provided on one side of the sample stage and a first driving device connected to the sample stage, the spectroscopic measurement method further comprising:

Acquiring an image of a partial region of the semiconductor material sample acquired by the image acquisition unit;

and generating a second control signal according to the image of the partial region and a preset image, so that the first driving device controls the sample stage to horizontally move to a first target position according to the second control signal, wherein the preset image is a complete image of the surface to be detected of the semiconductor material sample, and the image acquired by the image acquisition unit is an image of the target region in the semiconductor material sample under the condition that the sample stage moves to the first target position.

20. The spectroscopic measurement method as set forth in claim 19, wherein the spectroscopic measurement system further comprises an illumination light source assembly, a camera assembly, a shielding assembly and a second driving device, the illumination light source assembly and the camera assembly being disposed on one side of the sample stage, the shielding assembly being disposed on the light emitting side of the excitation light source, the second driving device being connected to the shielding assembly, the capturing an image of a partial region of the semiconductor material sample acquired by the image acquisition unit comprising:

Outputting a third control signal to the second driving device so that the second driving device drives the shielding assembly to shield the first light beam;

outputting an on signal to the illumination source to cause the illumination source to irradiate an illumination beam to a partial region of the semiconductor material sample with the first light beam, wherein the camera assembly is configured to receive the illumination beam reflected by the partial region and generate an image of the partial region from the illumination beam.

21. The method of spectral measurement according to claim 19, wherein generating a second control signal from the image of the partial region and a preset image comprises:

acquiring the preset image, wherein the preset image is provided with a first pixel area corresponding to the target area;

determining a second pixel area corresponding to the image of the partial area in the preset image;

generating displacement information according to a first position of the first pixel region in the preset image and a second position of the second pixel region in the preset image, wherein the displacement information comprises displacement parameters of the sample table in a horizontal direction, the horizontal direction is any direction parallel to a bearing surface of the sample table, and the displacement parameters correspond to a distance between the first position and the second position;

And generating the second control signal according to the displacement information.

22. The spectroscopic measurement method as set forth in claim 20, further comprising:

outputting a fourth control signal and a closing signal when the sample stage moves to the first target position, so that the second driving device drives the shielding assembly to release shielding of the first light beam according to the fourth control signal, and the illumination light source stops irradiating the illumination light beam according to the closing signal;

acquiring light spot information corresponding to a first light beam, wherein the light spot information comprises the light spot size of the first light beam irradiated onto the target area;

and generating a fourth control signal according to the light spot information and a preset light spot size, so that the first driving device controls the sample stage to vertically move to a second target position according to the fourth control signal, wherein the light spot size of the first light beam irradiated to the target area is the same as the preset light spot size under the condition that the sample stage moves to the second target position, and the preset light spot size is smaller than one half of the size of the semiconductor material sample.

23. A spectroscopic measurement device for a semiconductor material, characterized in that it is applied in a spectroscopic measurement system for a semiconductor material according to any one of claims 1 to 16, the spectroscopic measurement device comprising:

a control module for controlling an excitation light source in the spectroscopic measurement system to provide a first light beam exciting a semiconductor material sample with the semiconductor material sample placed on a sample stage in the spectroscopic measurement system such that the first light beam is focused to a measurement point on the semiconductor material sample to form a second light beam comprising an outgoing light of the semiconductor material sample formed by photoluminescence under irradiation of the first light beam;

the receiving module is used for receiving the photoluminescence spectrum generated by the spectrum measuring unit in the spectrum measuring system, wherein the spectrum measuring unit is used for receiving the second light beam and generating the photoluminescence spectrum corresponding to the measuring point according to the second light beam.

24. A computer readable storage medium, characterized in that a computer program is stored in the computer readable storage medium, wherein the computer program, when being executed by a processor, implements the steps of the method according to any of the claims 17 to 22.

25. An electronic device comprising a memory, a processor and a computer program stored on the memory and executable on the processor, characterized in that the processor implements the steps of the method of any of claims 17 to 22 when the computer program is executed.