CN115106936A - Diamond dressing disc and preparation method thereof - Google Patents
Diamond dressing disc and preparation method thereof Download PDFInfo
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- CN115106936A CN115106936A CN202210723066.8A CN202210723066A CN115106936A CN 115106936 A CN115106936 A CN 115106936A CN 202210723066 A CN202210723066 A CN 202210723066A CN 115106936 A CN115106936 A CN 115106936A
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 78
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- 238000000576 coating method Methods 0.000 claims abstract description 51
- 238000009966 trimming Methods 0.000 claims abstract description 51
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- UFGZSIPAQKLCGR-UHFFFAOYSA-N chromium carbide Chemical compound [Cr]#C[Cr]C#[Cr] UFGZSIPAQKLCGR-UHFFFAOYSA-N 0.000 claims description 3
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- -1 polytetrafluoroethylene Polymers 0.000 claims description 3
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Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/12—Dressing tools; Holders therefor
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Abstract
The invention provides a diamond trimming disc and a preparation method thereof, the trimming disc comprises a diamond trimming disc substrate, inert small particles, a first metal coating, a second metal coating, a third metal coating and diamond particles, wherein the diamond trimming disc substrate comprises an electroplating surface, the inert small particles are deposited on the electroplating surface of the diamond trimming disc substrate, the inert small particles are partially embedded in the first metal coating, the diamond particles are deposited on the first metal coating, and the inert small particles play a role in supporting the diamond particles so that edges or vertexes of the diamond are upward. The invention has the beneficial effects that: the inert small particles change the contact angle between the crystal face of the diamond particles and the plated surface of the trimming disc, so that the edges or vertexes of the diamond particles are upward, the contact area between a diamond cutting edge and a polishing pad in the trimming process is reduced, the press-in depth is increased, and the cutting rate of the polishing pad and the chip removing effect are improved.
Description
Technical Field
The invention belongs to the technical field of electroplating grinding tools, and particularly relates to a diamond trimming disc for chemical mechanical planarization processing of chips and a preparation method thereof.
Background
Chemical mechanical planarization is a technique for smoothing a silicon wafer or other substrate during processing by chemical etching and mechanical forces, and is one of the most important steps in semiconductor manufacturing. In the chemical mechanical planarization process, the removal of the wafer material is realized by means of the relative motion between the polishing pad and the wafer and the chemical erosion action of the polishing solution. The polishing pad has the functions of storing and transporting polishing solution, removing processing residual substances, transferring mechanical load, maintaining polishing environment and the like. With the continuous progress of the chemical mechanical planarization process, the physical and chemical properties of the polishing pad change, which means that residual substances are generated on the surface of the polishing pad, the volume of micropores is reduced, the number of micropores is reduced, the surface roughness is reduced, the molecular recombination phenomenon occurs on the surface, a glazed layer with a certain thickness is formed, and the polishing efficiency and the polishing quality are reduced. Therefore, the chemical mechanical planarization process needs to properly trim the polishing pad by using a diamond trimming disk, remove the glazed layer on the surface of the polishing pad, and increase the surface roughness of the polishing pad, so as to repair the processing performance of the polishing pad and ensure the stability and the repeatability of the polishing process. With the development of the semiconductor industry and the electronic industry, especially the rapid increase of the demand of integrated circuit chips in recent years in China, the demand of diamond trimming disks for chemical mechanical planarization is also rapidly increased.
One important performance criterion for diamond conditioning disks for chemical mechanical planarization is the cut rate to the polishing pad. Electroplated diamond conditioning disks made with hexahedral, hexa-octahedral diamond particles of complete crystal form typically suffer from a too low cutting rate. This is because, during sanding, the diamond particles distributed on the plated surface of the diamond conditioning disk are generally in contact with the plated surface with a certain complete crystal plane, which results in the production of a diamond conditioning disk having a large proportion of the cutting edges of the diamond. When the polishing pad is dressed, because the contact area of the diamond particles and the polishing pad is large, and the depth of pressing the diamond into the polishing pad is small, the dressing efficiency of the polishing pad is low, and the cleaning effect of the surface of the polishing pad is poor. To increase the cutting rate, two main technical approaches are currently used. First, an electroplated diamond conditioning disk was prepared using crushed diamond. Such a conditioning disk has problems that the cutting rate is rapidly attenuated, and diamond pieces may fall off. Secondly, the diamond mixture of octahedral diamond or octahedral diamond and hexa-octahedral diamond with complete crystal forms is used to make the electroplated diamond dressing disk. Because octahedral diamonds are expensive, the use of octahedral diamonds can significantly increase the cost of manufacturing electroplated diamond conditioning disks.
Disclosure of Invention
The invention aims to provide an electroplated diamond dressing disk for chemical mechanical planarization processing of chips and a preparation method thereof, aiming at solving the problem that the electroplated diamond dressing disk has low dressing efficiency on polishing pads.
In a first aspect the present invention provides a diamond conditioning disk comprising: the diamond trimming disk comprises a diamond trimming disk substrate, inert small particles, a first metal coating layer, a second metal coating layer, a third metal coating layer and diamond particles, wherein the diamond trimming disk substrate comprises an electroplating surface, the inert small particles are deposited on the electroplating surface of the diamond trimming disk substrate, the first metal coating layer is partially embedded with the inert small particles, the diamond particles are deposited on the first metal coating layer, and the inert small particles play a fulcrum role on the diamond particles so that edges or vertexes of the diamond are upward;
further, the inert small particles comprise one or more of corundum, silicon carbide, titanium carbide, chromium carbide, silicon dioxide and polytetrafluoroethylene;
further, the particle size of the inert small particles is between 10 and 40 mu m;
furthermore, the height of the small inert particles exposed above the first metal coating is between 5 and 20 μm;
further, the second metal coating covers the first metal coating and the inert small particles and is partially embedded with diamond particles, and the height of the diamond particles embedded with the second metal coating is 1/4-1/3 times of the diameter of the diamond particles;
further, the third metal coating covers the second metal coating and the electroplating surface, and is partially embedded with diamond particles, and the height of the diamond particles exposed out of the third metal coating is 1/5-1/3 times of the diameter of the diamond particles;
further, the diameter of the diamond particles ranges from 80 to 350 μm.
In a second aspect, the present invention provides a method of making a diamond conditioning disk comprising the steps of:
s1: carrying out oil removal treatment on a diamond trimming disk substrate, and then fixing a template with meshes and designed sizes and arranged patterns on an electroplating surface of the diamond trimming disk substrate;
s2: placing the diamond trimming disk substrate subjected to pre-plating treatment into a plating bath, using impact plating, and then using normal current density for pre-plating;
s3: uniformly dispersing the inert small particles on the surface of the template with meshes by using a sanding tool, wherein a part of the inert small particles can fall into the meshes of the template to be contacted with the diamond trimming disk substrate, and the projected area of the inert small particles falling into each mesh accounts for 5-20% of the area of a single mesh;
s4: electroplating the first metal coating layer at a normal current density until the inert particles are exposed above the first metal coating layer to a height of 5-20 μm;
s5: uniformly dispersing diamond particles on the first metal coating partially embedded with the small inert particles by using a sanding tool, and then electroplating a second metal coating until the diamond particles are embedded by the second metal coating to 1/4-1/3 times of the diameter of the diamond particles;
s6: taking out of the groove, removing the template with meshes, carrying out electrochemical activation, then re-putting the semi-finished diamond trimming disc subjected to inert small particle composite plating and diamond sand plating in S1-S5 into the groove, electroplating at normal current density until the height of the diamond particles exposed out of the third metal plating layer is 1/5-1/3 times of the diameter of the diamond particles, and taking out of the groove to obtain the diamond trimming disc;
further, the sanding tool is a tool comprising mechanical stirring, air stirring or a vibration device;
further, the pre-plating treatment comprises one or more of the following steps: chemical cleaning, electrochemical oil removal and electrochemical activation.
The invention has the beneficial effects that: by compositely electroplating a layer of inert small particles on the base of the diamond trimming disk, the contact angle between the crystal face of the diamond particles and the plated surface of the trimming disk is effectively changed, so that the edges or vertexes of the diamond particles in a complete crystal form are upward, the contact area between a diamond cutting edge and a polishing pad in the trimming process is reduced, the press-in depth is increased, and the cutting rate of the polishing pad and the chip removing effect are improved.
Drawings
FIG. 1 is a partial cross-sectional view of a diamond conditioning disk substrate after mounting a template in a method of making a diamond conditioning disk in accordance with an embodiment of the present invention;
FIG. 2 is a partial cross-sectional view of a diamond conditioning disk substrate after electroplating with small inert particles in a method of making a diamond conditioning disk in accordance with an embodiment of the present invention;
FIG. 3 is a schematic diagram showing the diamond-particle positions after sanding of diamond particles is completed in the method of manufacturing a diamond conditioning disk according to an embodiment of the present invention;
FIG. 4 is a schematic view of a portion of a diamond conditioning disk after sand electroplating on diamond particles is completed in a method for manufacturing a diamond conditioning disk according to an embodiment of the present invention;
FIG. 5 is a partial schematic view of a finished diamond conditioning disk made according to the method of making a diamond conditioning disk in an embodiment of the present invention.
In the figure: 1-diamond dressing disk substrate, 2-mesh template, 3-inert small particles, 41-first metal coating, 42-second metal coating, 43-third metal coating, and 5-diamond particles.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention will be further described with reference to the accompanying drawings. The following presents a simplified summary of the invention in order to provide a basic understanding of the invention and to provide a basic understanding of the invention.
As mentioned above, the diamond particles on the plated surface of the existing diamond conditioning disk usually work in contact with the plated surface with a certain complete crystal plane, resulting in that most of the cutting edges of the diamond conditioning disk are crystal planes of the diamond particles, the contact area of the crystal planes of the diamond particles and the polishing pad is large, and the pressing depth is low, thus resulting in low conditioning efficiency of the diamond conditioning disk and poor cleaning capability of the polishing pad.
In order to solve the problems, the invention provides a diamond trimming disk containing small inert particles, wherein a layer of small inert particles is electroplated on an electroplating surface of a base body of the diamond trimming disk, and the small inert particles play a role of supporting points for the diamond particles electroplated subsequently, so that the edges or vertexes of the diamond particles electroplated subsequently are upward, the contact area between a diamond cutting edge and a polishing pad in the trimming process is reduced relative to the diamond trimming disk without small particles, and the risk of falling of the diamond particles is reduced relative to crushed diamond.
In order to make the aforementioned objects, features and advantages of the present invention more comprehensible, embodiments accompanying the present invention are described in detail below with reference to the accompanying drawings.
The embodiment of the invention provides a preparation method of a diamond trimming disk, which comprises the following steps:
s1: the diamond conditioning disk substrate was degreased and then a mesh template with a designed size and pattern was attached to its plated surface, as shown in fig. 1.
In the present invention, the diamond conditioning disk substrate may be in the shape of a disk, and may be optionally configured in other shapes suitable for conditioning a polishing pad, such as: square, oval, etc., and the material can be carbon steel or stainless steel, or other high-hardness metal materials, such as: nichrome, chromium alloy, titanium alloy, etc., or high hardness non-metallic materials such as: ceramic, the above materials are only suitable choices for the diamond conditioning disk and should not be limited to the above materials.
In the present invention, the mesh-equipped stencil having a designed size and an arrangement pattern is not particularly limited and may be selected according to the actual circumstances.
S2: placing the diamond trimming disk substrate subjected to the plating pretreatment into a plating bath, using impact plating, and then using normal current density preplating.
In the present invention, the pre-plating treatment includes one or more combinations of chemical cleaning, electrochemical degreasing and electrochemical activation treatment, and other methods suitable for the pre-plating treatment in the art are also applicable to the present invention, and should not be limited to the above methods.
In the invention, the impact plating current density is 2.0-2.4A/dm 2 The normal current density is 1.4-1.8A/dm 2 Preferably, in the present invention, the impact plating current density is 2.2A/dm 2 The normal current density is 1.6A/dm 2 。
In the invention, the impact plating electroplating time can be selected from 1-20 min, preferably, the impact plating time can be selected from 1-2 min; the normal current density preplating time can be selected from 10-40 min, and preferably, the normal current density preplating time can be selected from 10-15 min.
S3: as shown in fig. 2, inert small particles are uniformly dispersed on the surface of a template with meshes by using a sanding tool, wherein a part of the inert small particles fall into the meshes of the template to contact with a diamond conditioning disk substrate, wherein the projected area of the inert small particles falling into each mesh accounts for 5-20% of the area of each mesh.
In the present invention, the sanding tool includes one or more of mechanical stirring, air stirring or a tool including a vibration device, and other suitable sanding tools in the art are also applicable to the present invention, and should not be limited to the above tools.
In the present invention, the inert small particles include one or more of corundum, silicon carbide, titanium carbide, chromium carbide, silicon dioxide, and polytetrafluoroethylene, and in the present invention, it is preferable that the inert small particles are corundum in terms of hardness and particle morphology.
S4: electroplating the first metal coating layer at a normal current density until the inert particles are exposed above the first metal coating layer to a height of 5-20 μm.
According to the invention, the inert small particles are partially embedded in the first metal coating, and the height of the inert small particles exposed out of the first metal coating is controlled within a certain range, so that a good supporting effect can be realized, the diamond particles in the obtained diamond trimming disk show upward edges or upward vertexes, and when the height of the inert small particles exposed out of the first metal coating is lower than 5 mu m, the height of the inert small particles protruding out of the first metal coating is slightly lower, so that a good supporting effect cannot be realized; when the height of the inert small particles exposed on the first metal coating is higher than 20 micrometers, the inert small particles are only 10-40 micrometers in particle size, and if the height of the inert small particles exposed on the first metal coating is higher, the bonding force between the inert small particles and the first metal coating is weakened, so that the phenomenon that diamond particles are loosened and fall off easily occurs in the using process; preferably, the height of the inert small particles exposed on the first metal coating is 10-18 μm, and particularly preferably, the height of the inert small particles exposed on the first metal coating is 10-15 μm.
In the invention, the particle size of the small inert particles is between 10 and 40 microns, and if the particle size of the small inert particles is less than 10 microns, the particle size is smaller, the process is difficult to control during electroplating, the proper height is difficult to expose on the first metal coating, and the purpose of supporting diamond particles cannot be realized; if the particle size of the inert small particles is larger than 40 μm, the exposed height is too high, the wrapping fastness of the inert small particles on the first metal coating is deteriorated, and the diamond particles on the inert small particles may loosen in the using process; preferably, the particle size of the small inert particles in the present invention is between 15 to 25 μm, and particularly preferably, the particle size of the small inert particles in the present invention is 20 μm.
In the invention, on the other hand, the purpose that the diamond particle edge faces upwards or the vertex points upwards in the diamond trimming disk is realized by controlling the area proportion of the projection area of the small inert particles in a single mesh to be between 5% and 20%, if the area proportion of the projection area of the small inert particles in the single mesh is lower than 5%, the small inert particles cannot play a supporting role, the distance between the small inert particles is too large and larger than the particle size of the diamond particles, so that a large number of diamond particles are still distributed on the first metal coating in a crystal face-up manner, and the trimming efficiency is reduced; if the projected area of the small inert particles accounts for more than 20% of the area of a single mesh, the distribution density of the small inert particles is too high, the space between the small inert particles is too small, the small inert particles can be regarded as a plane, and the diamond particles are still distributed in a mode that the crystal faces face upwards on the plane of the small inert particles, so that the dressing efficiency is also reduced; preferably, the projected area of the inert small particles in the present invention accounts for 8 to 18% of the area of a single mesh.
In the present invention, it is preferable that the shape of the inert small particles is selected from a spherical shape and an equiaxed polyhedral shape, in view of the ease of high control of the exposure of the inert small particles to the first metal plating layer.
S5: as shown in fig. 3 and 4, diamond particles are uniformly dispersed on a first metal coating layer partially encasing inert small particles using a sanding tool, followed by electroplating with a second metal coating layer until the diamond particles are encased by the second metal coating layer to between 1/4 and 1/3 times the diameter of the diamond.
In the present invention, the angle between the crystal plane of the diamond particle facing the plating surface and the first metal plating layer is 10 to 30 ° in view of a good cutting height and a good cutting rate.
In the invention, the second metal coating is used for temporarily fixing the diamond particles, and the distribution state and the relative position of the diamond particles are fixed before the template is removed by controlling the height of the diamond particles partially embedded by the second metal coating; if the diamond particles are embedded by the second metal plating layer to a diameter less than 1/4 times the diameter of the diamond, the force between the diamond particles and the second metal plating layer becomes weak, which may cause the diamond particles to be detached or dislocated in the subsequent template removing operation, and if the diamond particles are embedded by the second metal plating layer to a diameter more than 1/3 times the diameter of the diamond, which may cause the diamond conditioning disk to fail to maintain a good cutting height in the subsequent plating.
S6: and (3) discharging the diamond trimming disc from the groove, removing the template with meshes, carrying out electrochemical activation, then re-feeding the semi-finished diamond trimming disc subjected to inert small particle composite plating and diamond sand coating in the steps S1-S5 into the groove, electroplating at normal current density until the height of the diamond particles exposed out of the third metal coating is 1/5-1/3 times of the diameter of the diamond particles, and discharging the diamond trimming disc from the groove to obtain the diamond trimming disc shown in figure 5.
According to the invention, diamond particles are partially embedded in the third metal coating, wherein the exposed height of the diamond particles exposed out of the third metal coating is 1/5-1/3 times of the diameter of the diamond particles, if the exposed height is lower than 1/5 times of the diameter of the diamond particles, the edge height of the diamond trimming disk is lower, the trimming effect is poorer, and if the exposed height is higher than 1/3 times of the diameter of the diamond particles, the risk that the diamond particles fall off is increased, and the polished wafer is scratched.
In the present invention, the diamond particles are regular in shape and are polyhedral, such as hexahedral, octahedral, hexaoctahedral, rhombohedral, icosahedral, prismatic or prismoid structures, and in view of cost and difficulty in obtaining, one of hexahedral and hexaoctahedral diamond particles is preferably used in the present invention, and hexaoctahedral diamond particles are particularly preferably used; in the invention, the diameter range of the diamond particles is between 80 and 350 mu m.
In the present invention, the first metal plating layer, the second metal plating layer and the third metal plating layer are made of the same or different plating materials, and may be one or more selected from nickel alloy, chromium alloy, nickel-chromium alloy and nickel-cobalt alloy.
Example 1
Electroplated diamond conditioning disk with diamond particle diameter of 180 mu m
Diamond conditioner disk substrate treatment
Firstly, processing a diamond trimming disc substrate, and fixing a template with meshes on an electroplating surface of the diamond trimming disc substrate after chemical degreasing, wherein the size of the meshes is 240 mu m, and the space between the meshes is 380 mu m; and assembling the tool clamp, adopting cathode degreasing and anode degreasing for 2 minutes respectively, wherein the current density is 5A/dm 2 Then carrying out electrochemical activation after hot water washing and cold water washing, wherein the activation current density is 15A/dm 2 The time is 1.5min, then the diamond is quickly washed by tap water and rinsed by distilled waterThe stone trimming disc substrate is provided with an electric groove;
(II) inert small particle electroplating
At 2.2A/dm 2 Current density impact plating for 2min, followed by 1.6A/dm 2 Pre-plating for 15 min; sanding, dropping corundum particles with a diameter of 20 μm into the mesh of the template at a rate of 1.6A/dm 2 Electroplating for 0.5h to obtain a first metal coating;
(III) electroplating of Diamond particles
Uniformly distributing 180 mu m hexa-octahedron diamond particles on a template, rotating the diamond trimming disk substrate for one circle according to a tilting angle of 20 degrees, ensuring that each mesh contains diamond particles at a rate of 1.6A/dm 2 Electroplating for 3 hours at the current density to obtain a second metal coating; removing sand after sand plating, removing template, reactivating diamond particles by the electrochemical activation process, and charging into a tank at a rate of 1.6A/dm 2 The current density is thickened and plated for 3.5 hours to obtain a third metal plating layer; then, the jig was disassembled to obtain an electroplated diamond conditioning disk having a grain size of 180 μm.
Comparative example 1
The preparation method is the same as that in example 1 above except that electroplating containing no inert small particles.
Comparative example 2
The production method was the same as that in comparative example 1 except that the above-described hexa-octahedral diamondoid particles were replaced with diamond crushed materials.
Cutting rate
The diamond conditioning disks prepared in the examples and comparative examples were subjected to the on-machine test, and the cutting rate was evaluated under the following conditions:
the testing machine is AMAT Refelxion (Modify 5 Zone);
the polishing PAD is a DH3000 series PAD controlled by Dinglong;
the polishing solution is ANJI3060(1:9 dilution, H) 2 O 2 1%), flow rate 150 mL/min;
the diamond conditioning disks were the diamond conditioning disks prepared in example 1 and comparative examples 1 and 2;
the wafers (wafers) used were pattern wafers Semitech 754, Cu Blanket wafer PreThickness 10 KA.
The change in weight of the pad was recorded and the cut rate was calculated.
The electroplated diamond conditioning disk obtained in example 1 has uniform diamond distribution, the number of diamond particles with crystal planes parallel to the plated surface of the conditioning disk substrate is obviously reduced, the cutting rate is far higher than that of a diamond conditioning disk without inert small particles, although the initial cutting rate is slightly lower than that of a broken diamond conditioning disk, the cutting rate is slightly attenuated, and the electroplated diamond conditioning disk still has certain cutting capacity after being operated for a long time of 20 hours.
The diamond conditioning disk and the method for making the same according to the present invention are described in detail above. The principles and embodiments of the present invention are explained herein using specific examples, which are presented only to assist in understanding the method and its core concepts. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention.
Claims (10)
1. A diamond conditioning disk, comprising: the diamond conditioning disk comprises a diamond conditioning disk substrate, small inert particles, a first metal coating layer, a second metal coating layer, a third metal coating layer and diamond particles, wherein the diamond conditioning disk substrate comprises an electroplating surface, the small inert particles are deposited on the electroplating surface of the diamond conditioning disk substrate, the small inert particles are partially embedded in the first metal coating layer, the diamond particles are deposited on the first metal coating layer, and the small inert particles play a fulcrum action on the diamond particles so that edges or vertexes of the diamond are upward.
2. The diamond conditioning disk of claim 1 wherein said small inert particles comprise one or more combinations of corundum, silicon carbide, titanium carbide, chromium carbide, silica, polytetrafluoroethylene.
3. The diamond conditioning disk of claim 1 wherein the small inert particles have a particle size of between 10 and 40 μm.
4. The diamond conditioning disk of claim 1 wherein the inert small particles are exposed above the first metal coating to a height of between 5 and 20 μm.
5. The diamond conditioning disk of claim 1 wherein the second metal coating overlies the first metal coating and the small inert particles and is partially embedded with diamond particles, the second metal coating embedding the diamond particles to a height between 1/4 and 1/3 times the diameter of the diamond particles.
6. The diamond conditioning disk of claim 1 wherein the third metal coating overlies the second metal coating and the plating surface and is partially embedded with diamond grains exposed to the third metal coating to a height between 1/5 and 1/3 times the diameter of the diamond grains.
7. The diamond conditioning disk of claim 1 wherein the diamond particles range in diameter from 80 to 350 μm.
8. A method of making a diamond conditioning disk comprising the steps of:
s1: carrying out oil removal treatment on a diamond trimming disk substrate, and then fixing a template with meshes and designed sizes and arranged patterns on an electroplating surface of the diamond trimming disk substrate;
s2: placing the diamond trimming disk substrate subjected to pre-plating treatment into a plating bath, using impact plating, and then using normal current density for pre-plating;
s3: uniformly dispersing the inert small particles on the surface of the template with meshes by using a sanding tool, wherein a part of the inert small particles can fall into the meshes of the template to be contacted with the diamond trimming disk substrate, and the projected area of the inert small particles falling into each mesh accounts for 5-20% of the area of a single mesh;
s4: electroplating the first metal coating layer at a normal current density until the inert particles are exposed above the first metal coating layer to a height of 5-20 μm;
s5: uniformly dispersing diamond particles on the first metal coating partially embedded with the small inert particles by using a sanding tool, and then electroplating a second metal coating until the diamond particles are embedded by the second metal coating to 1/4-1/3 times of the diameter of the diamond particles;
s6: and (3) discharging the diamond trimming disc out of the groove, removing the template with meshes, carrying out electrochemical activation, then re-feeding the semi-finished diamond trimming disc subjected to inert small particle composite plating and diamond sand coating in the steps S1-S5, electroplating the third metal coating at normal current density until the height of the diamond particles exposed out of the third metal coating is 1/5-1/3 times of the diameter of the diamond particles, and discharging the diamond trimming disc out of the groove to obtain the diamond trimming disc.
9. The method of making a diamond conditioning disk according to claim 8, wherein said sanding tool is a tool comprising mechanical agitation, air agitation, or a vibrating device.
10. The method of making a diamond conditioning disk according to claim 8, wherein said pre-plating treatment comprises one or more of the following steps: chemical cleaning, electrochemical oil removal and electrochemical activation.
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| CN202210723066.8A CN115106936B (en) | 2022-06-24 | 2022-06-24 | Diamond dressing disc and preparation method thereof |
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Cited By (1)
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| CN116652825A (en) * | 2023-07-24 | 2023-08-29 | 北京寰宇晶科科技有限公司 | Diamond CMP polishing pad trimmer and preparation method thereof |
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