CN114550809A - Test method, device, computer equipment and storage medium for multiple memory cards - Google Patents
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Abstract
Description
技术领域technical field
本申请涉及存储技术领域,尤其涉及多存储卡的测试方法、装置、计算机设备及存储介质。The present application relates to the field of storage technology, and in particular, to a testing method, device, computer equipment and storage medium for multiple memory cards.
背景技术Background technique
随着信息处理技术的发展,对存储装置的需求显著增加。小型的存储装置,如存储卡,由于携带方便、高数据储存量及易于存取的优点而广为使用。基于存储卡的需求增加,于存储卡量产前,存储卡测试流程的重要性也相对提升,并进一步确保存储卡的效能及兼容性。因此,对系统制造商及设计者而言,低成本及高效能的存储卡测试成为一个重要的课题。With the development of information processing technology, the demand for storage devices has increased significantly. Small storage devices, such as memory cards, are widely used due to the advantages of portability, high data storage capacity, and easy access. Due to the increasing demand for memory cards, the importance of the memory card testing process is also relatively increased before the mass production of memory cards to further ensure the performance and compatibility of memory cards. Therefore, low-cost and high-performance memory card testing has become an important issue for system manufacturers and designers.
传统对存储卡测试时,需测试人员手动及逐步地处理测试,用以确保存储卡的效能。举例来说,需通过测试人员手动地插入或拔除每一张存储卡来进行测试。在测试流程中,需要各种不同的测试装置,用以确保存储卡的效能及兼容性。可见传统使用的存储卡测试流程不仅费时也成本昂贵。现有技术中对存储卡的测试原理是,将同一笔数据写入多个存储卡中,然后将数据读出来,验证读出来的数据和写入的数据的吻合度,以此来进行存储卡的操作。Traditionally, when testing memory cards, testers are required to manually and step-by-step process the tests to ensure the performance of the memory cards. For example, testing is performed by the tester manually inserting or removing each memory card. In the testing process, various testing devices are required to ensure the performance and compatibility of the memory card. It can be seen that the traditional memory card testing process is not only time-consuming but also expensive. The testing principle of the memory card in the prior art is to write the same data into multiple memory cards, then read the data, and verify the consistency between the read data and the written data, so as to test the memory card. operation.
此项测试操作有几个特点:一是数据量比较大,比如,待测试的存储设备为存储卡时,若是存储卡的容量为256GB,那么测试数据就是256GB;若是待测试的存储设备为硬盘时,若是硬盘的容量为2T,那么测试数据就得是2T;二是待测试数据都是从主机端(电脑)写入到多个待测试的存储设备。写入--读取--数据比对;再写入--擦除区块—读取--数据比对。通常来讲,此类测试流程会反复几次,以此来测试存储设备的存储数据的稳定性。可见测试过程非常漫长,效率低下。This test operation has several characteristics: First, the amount of data is relatively large. For example, when the storage device to be tested is a memory card, if the capacity of the memory card is 256GB, the test data is 256GB; if the storage device to be tested is a hard disk If the capacity of the hard disk is 2T, then the test data must be 2T; second, the data to be tested is written from the host (computer) to multiple storage devices to be tested. Write--read--data comparison; re-write--erase block--read--data comparison. Generally speaking, this kind of test process is repeated several times to test the stability of the stored data of the storage device. It can be seen that the testing process is very long and inefficient.
发明内容SUMMARY OF THE INVENTION
本申请实施例的目的在于提出一种多存储卡的测试方法、装置、计算机设备及存储介质,以解决现有技术中多存储卡测试过程非常漫长,效率低下的问题。The purpose of the embodiments of the present application is to provide a multi-memory card testing method, device, computer equipment and storage medium, so as to solve the problems of long and low efficiency in the multi-memory card testing process in the prior art.
为了解决上述技术问题,本申请提供一种多存储卡的测试方法,采用了如下所述的技术方案,包括下述步骤:In order to solve the above-mentioned technical problems, the present application provides a method for testing multiple memory cards, which adopts the technical solution described below, including the following steps:
获取将数据和多存储卡的编号写入多存储卡的写入命令,所述写入命令包括所述数据和所述编号;Obtain a write command for writing data and the number of the multi-memory card into the multi-memory card, and the write command includes the data and the number;
解析所述写入命令,获得所述数据和所述编号,将所述数据按照所述编号写入多存储卡中;Parse the write command, obtain the data and the serial number, and write the data into the multiple memory cards according to the serial number;
从每两个不同编号的多存储卡中读取所述数据,将读取到的数据存入比对电路中进行异或运算,根据异或运算的结果来判断所述两个不同编号的多存储卡是否正常。Read the data from every two multi-memory cards with different numbers, store the read data in the comparison circuit for XOR operation, and judge the number of the two different numbers according to the result of the XOR operation. Is the memory card normal.
进一步的,在所述获取将数据和多存储卡的编号写入多存储卡的写入命令,所述写入命令携带所述数据和所述编号的步骤之前还包括:Further, before the described acquisition writes the data and the number of the multi-memory card into the write command of the multi-memory card, the write command also includes before the step of carrying the data and the number:
设置写入命令的规则。Sets the rules for writing commands.
进一步的,所述解析所述写入命令,获得所述数据和所述编号,将所述数据按照所述编号写入多存储卡中的步骤具体包括:Further, the step of parsing the write command, obtaining the data and the serial number, and writing the data into the multi-memory card according to the serial number specifically includes:
解析所述写入命令,获得所述数据和所述编号;Parse the write command to obtain the data and the number;
将获得的所述数据缓存至缓存区中;Cache the obtained data in the cache area;
将缓存区中的数据按照所述编号写入多存储卡中。Write the data in the buffer area to the multi-memory card according to the stated number.
进一步的,所述从每两个不同编号的多存储卡中读取所述数据,将读取到的数据放入比对电路中进行异或运算,根据异或运算结果判断多存储卡是否正常的步骤具体包括:Further, the described data is read from the multiple memory cards of every two different numbers, the read data is put into the comparison circuit to carry out XOR operation, and whether the multiple storage cards are normal according to the XOR operation result is judged. The steps specifically include:
按照多存储卡的编号进行两两分组;According to the number of the multiple memory cards, group them in pairs;
从每两个不同编号的多存储卡中读取所述数据,将读取到的数据放入比对电路中进行异或运算;Read the data from every two multi-memory cards with different numbers, and put the read data into the comparison circuit for XOR operation;
如果异或运算结果为0,则判断这两个不同编号的多存储卡是正常的,如果异或运算结果为1,则判断这两个不同编号的多存储卡有一个卡是异常的;If the result of the XOR operation is 0, it is judged that the two multi-memory cards with different numbers are normal; if the result of the XOR operation is 1, it is judged that one of the two multi-memory cards with different numbers is abnormal;
对有异常的多存储卡的组别进行标识,再将有异常的多存储卡的组别中的每一个多存储卡与已经检测出的正常的多存储卡进行异或运算,直到检测出所有多存储卡的正常与异常情况。Identify the abnormal multi-memory card group, and then perform XOR operation on each multi-memory card in the abnormal multi-memory card group with the detected normal multi-memory card until all the abnormal multi-memory cards are detected. Normal and abnormal conditions of multiple memory cards.
进一步的,所述设置写入命令的规则包括:Further, the rules for setting the write command include:
设置写入命令的第一个字节代表多存储卡的编号。The first byte of the set write command represents the number of the multiple memory card.
进一步的,在所述从每两个不同编号的多存储卡中读取所述数据,将读取到的数据放入比对电路中进行异或运算,根据异或运算结果判断多存储卡是否正常的步骤之后还包括:Further, read the data from the multiple memory cards of every two different numbers, put the read data into the comparison circuit and carry out XOR operation, and judge whether the multiple memory cards are based on the XOR operation result. The normal steps are followed by:
显示有异常的多存储卡编号。An abnormal multiple memory card number is displayed.
为了解决上述技术问题,本申请还提供一种多存储卡的测试装置,采用了如下所述的技术方案,包括:In order to solve the above technical problems, the present application also provides a multi-memory card testing device, which adopts the following technical solutions, including:
获取模块,用于获取将数据和多存储卡的编号写入多存储卡的写入命令,所述写入命令携带所述数据和所述编号;an acquisition module, for acquiring a write command for writing data and the number of the multi-memory card into the multi-memory card, and the write command carries the data and the number;
写入模块,用于解析所述写入命令,获得所述数据和所述编号,将所述数据按照所述编号写入多存储卡中;a writing module for parsing the writing command, obtaining the data and the serial number, and writing the data into the multi-memory card according to the serial number;
判别模块,用于从每两个不同编号的多存储卡中读取所述数据,将读取到的数据放入比对电路中进行异或运算,根据异或运算结果判断多存储卡是否正常。The discriminating module is used to read the data from every two multi-memory cards with different numbers, put the read data into the comparison circuit for XOR operation, and judge whether the multi-memory card is normal according to the XOR operation result .
进一步的,所述写入模块包括:Further, the writing module includes:
解析模块,用于解析所述写入命令,获得所述数据和所述编号;a parsing module for parsing the write command to obtain the data and the number;
缓存模块,用于将所述数据缓存至缓存区SRAM中;a cache module, used to cache the data in the cache area SRAM;
输出模块,用于由缓存区SRAM将所述数据按照所述编号写入多存储卡中。The output module is used for writing the data into the multiple memory cards according to the number from the buffer area SRAM.
为了解决上述技术问题,本申请还提供一种计算机设备,采用了如下所述的技术方案,包括存储器和处理器,所述存储器中存储有计算机可读指令,所述处理器执行所述计算机可读指令时实现上述的多存储卡的测试方法的步骤。In order to solve the above technical problems, the present application also provides a computer device, which adopts the technical solution described below, including a memory and a processor, where computer-readable instructions are stored in the memory, and the processor executes the computer-readable instructions. The steps of implementing the above-mentioned multi-memory card testing method when reading the instruction.
为了解决上述技术问题,本申请还提供一种计算机可读存储介质,采用了如下所述的技术方案,所述计算机可读存储介质上存储有计算机可读指令,所述计算机可读指令被处理器执行时实现上述的多存储卡的测试方法的步骤。In order to solve the above technical problems, the present application also provides a computer-readable storage medium, which adopts the following technical solution, where computer-readable instructions are stored on the computer-readable storage medium, and the computer-readable instructions are processed The steps of implementing the above-mentioned multi-memory card testing method when the device is executed.
与现有技术相比,本申请主要有以下有益效果:通过对多存储卡进行编号,将数据同时写入多个多存储卡,毋须依赖人力,能自动化执行存储卡的测试,节省成本且能够提升测试效率,测试可靠且易于实现,可普遍适用于存储卡的测试中。Compared with the prior art, the present application mainly has the following beneficial effects: by numbering the multi-memory cards, data is simultaneously written into the plurality of multi-memory cards, without relying on manpower, the test of the memory cards can be automatically performed, the cost is saved, and the Improve the test efficiency, the test is reliable and easy to implement, and can be widely used in the test of memory cards.
附图说明Description of drawings
为了更清楚地说明本申请中的方案,下面将对本申请实施例描述中所需要使用的附图作一个简单介绍,显而易见地,下面描述中的附图是本申请的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to illustrate the solutions in the present application more clearly, the following will briefly introduce the accompanying drawings used in the description of the embodiments of the present application. For those of ordinary skill, other drawings can also be obtained from these drawings without any creative effort.
图1是本申请可以应用于其中的示例性系统架构图;FIG. 1 is an exemplary system architecture diagram to which the present application can be applied;
图2本申请的多存储卡的测试方法的一个实施例的流程图;2 is a flowchart of an embodiment of the testing method for multiple memory cards of the present application;
图3是现有技术中多存储卡的测试原理图;Fig. 3 is a test schematic diagram of multiple memory cards in the prior art;
图4是现有技术中多存储卡的测试数据传输时序图;Fig. 4 is the test data transmission sequence diagram of multiple memory cards in the prior art;
图5是本申请的多存储卡的测试数据传输时序图;Fig. 5 is the test data transmission sequence diagram of the multi-memory card of the present application;
图6是本申请的数据同时写入多存储卡的一实施例原理图;6 is a schematic diagram of an embodiment in which data of the present application is simultaneously written to multiple memory cards;
图7是本申请的数据同时写入多存储卡的另一实施例原理图;7 is a schematic diagram of another embodiment in which data of the present application is simultaneously written to multiple memory cards;
图8是本申请的八位的异或电路图;Fig. 8 is the exclusive OR circuit diagram of eight bits of the present application;
图9是本申请的逻辑电路图;9 is a logic circuit diagram of the present application;
图10是本申请的多存储卡的测试装置的一个实施例的结构示意图;10 is a schematic structural diagram of an embodiment of the multi-memory card testing device of the present application;
图11是图10所示写入模块一种具体实施方式的结构示意图;11 is a schematic structural diagram of a specific implementation manner of the writing module shown in FIG. 10;
图12是本申请的计算机设备的一个实施例的结构示意图。FIG. 12 is a schematic structural diagram of an embodiment of a computer device of the present application.
图中,A-或非门,B-与非门,C-非门。In the figure, A-NOR gate, B-NAND gate, C-NOT gate.
具体实施方式Detailed ways
除非另有定义,本文所使用的所有的技术和科学术语与属于本申请的技术领域的技术人员通常理解的含义相同;本文中在申请的说明书中所使用的术语只是为了描述具体的实施例的目的,不是旨在于限制本申请;本申请的说明书和权利要求书及上述附图说明中的术语“包括”和“具有”以及它们的任何变形,意图在于覆盖不排他的包含。本申请的说明书和权利要求书或上述附图中的术语“第一”、“第二”等是用于区别不同对象,而不是用于描述特定顺序。Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field of this application; the terms used herein in the specification of the application are for the purpose of describing specific embodiments only It is not intended to limit the application; the terms "comprising" and "having" and any variations thereof in the description and claims of this application and the above description of the drawings are intended to cover non-exclusive inclusion. The terms "first", "second" and the like in the description and claims of the present application or the above drawings are used to distinguish different objects, rather than to describe a specific order.
在本文中提及“实施例”意味着,结合实施例描述的特定特征、结构或特性可以包含在本申请的至少一个实施例中。在说明书中的各个位置出现该短语并不一定均是指相同的实施例,也不是与其它实施例互斥的独立的或备选的实施例。本领域技术人员显式地和隐式地理解的是,本文所描述的实施例可以与其它实施例相结合。Reference herein to an "embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the present application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor a separate or alternative embodiment that is mutually exclusive of other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.
为了使本技术领域的人员更好地理解本申请方案,下面将结合附图,对本申请实施例中的技术方案进行清楚、完整地描述。In order to make those skilled in the art better understand the solutions of the present application, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the accompanying drawings.
如图1所示,系统架构100可以包括第一终端设备101、第二终端设备102、第三终端设备103,网络104和服务器105。网络104用以在第一终端设备101、第二终端设备102、第三终端设备103和服务器105之间提供通信链路的介质。网络104可以包括各种连接类型,例如有线、无线通信链路或者光纤电缆等等。As shown in FIG. 1 , the
用户可以使用第一终端设备101、第二终端设备102、第三终端设备103通过网络104与服务器105交互,以接收或发送消息等。第一终端设备101、第二终端设备102、第三终端设备103上可以安装有各种通讯客户端应用,例如网页浏览器应用、购物类应用、搜索类应用、即时通信工具、邮箱客户端、社交平台软件等。The user can use the first
第一终端设备101、第二终端设备102、第三终端设备103可以是具有显示屏并且支持网页浏览的各种电子设备,包括但不限于智能手机、平板电脑、电子书阅读器、MP3播放器(Moving Picture E多存储卡的测试pertsGroup AudioLayer III,动态影像专家压缩标准音频层面3)、MP4(Moving PictureE多存储卡的测试perts Group Audio Layer IV,动态影像专家压缩标准音频层面4)播放器、膝上型便携计算机和台式计算机等等。The first
服务器105可以是提供各种服务的服务器,例如对第一终端设备101、第二终端设备102、第三终端设备103上显示的页面提供支持的后台服务器。The
需要说明的是,本申请实施例所提供的多存储卡的测试方法一般由服务器/终端设备执行,相应地,多存储卡的测试装置一般设置于服务器/终端设备中。It should be noted that the multi-memory card testing method provided by the embodiments of the present application is generally performed by a server/terminal device, and accordingly, a multi-memory card testing apparatus is generally set in the server/terminal device.
应该理解,图1中的终端设备、网络和服务器的数目仅仅是示意性的。根据实现需要,可以具有任意数目的终端设备、网络和服务器。It should be understood that the numbers of terminal devices, networks and servers in FIG. 1 are merely illustrative. There can be any number of terminal devices, networks and servers according to implementation needs.
实施例一Example 1
继续参考图2,示出了本申请的多存储卡的测试方法的一个实施例的流程图。所述的多存储卡的测试方法,包括以下步骤:Continuing to refer to FIG. 2 , a flow chart of an embodiment of the multi-memory card testing method of the present application is shown. The method for testing multiple memory cards includes the following steps:
步骤S201,获取将数据和多存储卡的编号写入多存储卡的写入命令,所述写入命令包括所述数据和所述编号。Step S201: Obtain a write command for writing data and the serial number of the multi-memory card into the multi-memory card, where the write command includes the data and the serial number.
图3是现有技术中多存储卡的测试原理图。如图3所示,现有技术中多存储卡的测试,通常由终端、USB集线器和多存储卡组成测试系统。USB集线器一头是USB接口,另外一头可以是多个接口。多个接口可以相同,也可以不相同。多个接口可以包括SATA接口,USB接口,Type-C接口等。通过SATA接口、USB接口、Type-C等接口,连接多存储卡。测试过程中,需要测试人员手动地插入或拔除每一张存储卡如多存储卡1、多存储卡2、多存储卡3、多存储卡4来进行测试。可见,测试起来费时费力。FIG. 3 is a test schematic diagram of multiple memory cards in the prior art. As shown in FIG. 3 , in the testing of multiple memory cards in the prior art, a test system is usually composed of a terminal, a USB hub and multiple memory cards. One end of the USB hub is a USB interface, and the other end can be multiple interfaces. Multiple interfaces can be the same or different. The multiple interfaces may include a SATA interface, a USB interface, a Type-C interface, and the like. Connect multiple memory cards through SATA interface, USB interface, Type-C and other interfaces. During the test, the tester needs to manually insert or remove each memory card such as the multi-memory card 1, the
图4是现有技术中多存储卡的测试数据传输时序图。如图4所示,同一笔数据从终端写入到多个存储卡,数据由W1、W2、W3、W4组成;T1时间时数据W1写入到卡1中,T2时间时数据W2写入到卡1中,T3时间时数据W3写入到卡1中,T4时间时数据W4写入到卡1中。可见,数据存储是串行进行的。FIG. 4 is a sequence diagram of test data transmission of multiple memory cards in the prior art. As shown in Figure 4, the same data is written from the terminal to multiple memory cards, and the data is composed of W1, W2, W3, and W4; at T1 time, data W1 is written into card 1, and at T2 time, data W2 is written into In card 1, data W3 is written into card 1 at time T3, and data W4 is written into card 1 at time T4. It can be seen that the data storage is carried out serially.
在本实施例的一些可选的实现方式中,在步骤S201、在获取将数据和多存储卡的编号写入多存储卡的写入命令,所述写入命令包括所述数据和所述编号的步骤之前,上述电子设备还可以执行以下步骤:设置写入命令的规则。In some optional implementations of this embodiment, in step S201, a write command for writing the data and the serial number of the multi-memory card into the multi-memory card is obtained, and the write command includes the data and the serial number Before the step of , the above-mentioned electronic device may further perform the following step: set a rule for writing a command.
例如所述设置写入命令的规则包括:设置写入命令的第一个字节代表多存储卡的编号。当然,也可以根据实际需要,按照实际需要测试的多存储卡数量来定义字节数代表多存储卡的编号。这里,不对多存储卡的编号字节数形成限制。For example, the rules for setting the write command include: setting the first byte of the write command to represent the serial number of the multiple memory cards. Of course, the number of bytes representing the number of the multi-memory card can also be defined according to the actual needs and the number of multi-memory cards to be tested. Here, there is no restriction on the number of bytes of the multi-memory card number.
本申请中,对多存储卡进行编号,将编号信息写入多存储卡内,这样方便进行跟踪测试。In this application, the multi-memory cards are numbered, and the numbering information is written into the multi-memory cards, which facilitates the tracking test.
在本实施例中,多存储卡的测试方法运行于其上的电子设备(例如图1所示的服务器/终端设备)可以通过有线连接方式或者无线连接方式接收多存储卡的测试请求。需要指出的是,上述无线连接方式可以包括但不限于3G/4G/5G连接、WiFi连接、蓝牙连接、WiMA多存储卡的测试连接、Zigbee连接、UWB(ultra wideband)连接、以及其他现在已知或将来开发的无线连接方式。In this embodiment, the electronic device (for example, the server/terminal device shown in FIG. 1 ) on which the multi-memory card testing method runs can receive the multi-memory card testing request through wired connection or wireless connection. It should be pointed out that the above wireless connection methods may include but are not limited to 3G/4G/5G connection, WiFi connection, Bluetooth connection, WiMA multi-memory card test connection, Zigbee connection, UWB (ultra wideband) connection, and other known or wireless connection methods developed in the future.
步骤S202,解析所述写入命令,获得所述数据和所述编号,将所述数据按照所述编号写入多存储卡中。Step S202, parse the write command, obtain the data and the serial number, and write the data into the multi-memory card according to the serial number.
在本实施例的一些可选的实现方式中,所述解析所述写入命令,获得所述数据和所述编号,将所述数据按照所述编号写入多存储卡中的步骤具体包括:In some optional implementations of this embodiment, the step of parsing the write command, obtaining the data and the serial number, and writing the data into the multi-memory card according to the serial number specifically includes:
解析所述写入命令,获得所述数据和所述编号;Parse the write command to obtain the data and the number;
将获得的所述数据缓存至缓存区中;Cache the obtained data in the cache area;
将缓存区中的数据按照所述编号写入多存储卡中。Write the data in the buffer area to the multi-memory card according to the stated number.
图5是本申请的多存储卡的测试数据传输时序图。如图5所示,可以在一个T1时间内将数据W1、W2、W3和W4同时写入到存储卡1中,以及控制电路(主控)也可以在T1时间内将数据W1、W2、W3和W4写入到存储卡2或者/和存储卡3或/和存储卡4中。存储卡1、存储卡2、存储卡3、存储卡4等编号是通过解析写入命令所获得的。在T1时间内将数据W1、W2、W3和W4写入到存储卡2或者/和存储卡3或/和存储卡4中之前,可以将数据W1、W2、W3和W4先缓存至缓存区中。设置数据输出缓冲区,用以暂时存放写期间的数据而在内存区预留的一定空间。即利用主存的存储空间来暂存从磁盘中输出的信息。目的是缓和CPU与I/O设备间速度不匹配的矛盾。减少对CPU的中断频率,放宽对CPU中断响应时间的限制。提高CPU和I/O设备之间的并行性。可见采用本实施例,数据存储是并行进行的,可以节省时间。FIG. 5 is a test data transmission sequence diagram of the multi-memory card of the present application. As shown in Figure 5, the data W1, W2, W3 and W4 can be written into the memory card 1 simultaneously within a T1 time, and the control circuit (master) can also write the data W1, W2, W3 within the T1 time and W4 are written to
图6是本申请的数据同时写入多存储卡的一实施例原理图。如图6所示,终端发出数据写入到各个存储卡中的指令,CPU执行该指令,CPU控制终端(主机端)的数据先缓存至缓存区SRAM中。主控是指测试装置的主控,该主控焊接到一个PCB上,PCB一头有连接主机端的接口,另外一头有插接多个存储卡的卡槽,用以实现卡连接到测试板。FIG. 6 is a schematic diagram of an embodiment of the present application for simultaneously writing data to multiple memory cards. As shown in FIG. 6 , the terminal issues an instruction to write data into each memory card, the CPU executes the instruction, and the CPU controls the terminal (host) data to be cached in the cache area SRAM first. The main control refers to the main control of the test device. The main control is soldered to a PCB. One end of the PCB has an interface for connecting to the host, and the other end has a card slot for inserting multiple memory cards to connect the cards to the test board.
具体地,开始测试时,主控中的CPU将主机端的数据W1、W2、W3和W4先写入到缓冲区,再将缓冲区的该W1、W2、W3和W4数据写入到各个卡中,以此来实现数据同时写入到各个卡中。Specifically, when starting the test, the CPU in the main control first writes the data W1, W2, W3 and W4 of the host into the buffer, and then writes the data of W1, W2, W3 and W4 in the buffer to each card , so as to realize the simultaneous writing of data to each card.
步骤S203,从每两个不同编号的多存储卡中读取所述数据,将读取到的数据存入比对电路中进行异或运算,根据异或运算的结果来判断所述两个不同编号的多存储卡是否正常。Step S203, read the data from each two different numbered multi-memory cards, store the read data in the comparison circuit and perform an XOR operation, and judge the two different according to the result of the XOR operation. Whether the numbered multi-memory card is normal.
在本实施例的一些可选的实现方式中,所述从每两个不同编号的多存储卡中读取所述数据,将读取到的数据放入比对电路中进行异或运算,根据异或运算结果判断多存储卡是否正常的步骤具体包括:In some optional implementations of this embodiment, the data is read from every two multi-memory cards with different numbers, and the read data is put into a comparison circuit to perform an exclusive OR operation, according to The steps of judging whether the multi-memory card is normal based on the result of the exclusive OR operation specifically include:
按照多存储卡的编号进行两两分组;According to the number of the multiple memory cards, group them in pairs;
从每两个不同编号的多存储卡中读取所述数据,将读取到的数据放入比对电路中进行异或运算;Read the data from every two multi-memory cards with different numbers, and put the read data into the comparison circuit for XOR operation;
如果异或运算结果为0,则判断这两个不同编号的多存储卡是正常的,如果异或运算结果为1,则判断这两个不同编号的多存储卡有一个卡是异常的;If the result of the XOR operation is 0, it is judged that the two multi-memory cards with different numbers are normal; if the result of the XOR operation is 1, it is judged that one of the two multi-memory cards with different numbers is abnormal;
对有异常的多存储卡的组别进行标识,再将有异常的多存储卡的组别中的每一个多存储卡与已经检测出的正常的多存储卡进行异或运算,直到检测出所有多存储卡的正常与异常情况。Identify the abnormal multi-memory card group, and then perform XOR operation on each multi-memory card in the abnormal multi-memory card group with the detected normal multi-memory card until all the abnormal multi-memory cards are detected. Normal and abnormal conditions of multiple memory cards.
本申请实施例还进一步要求保护同时读取各个卡中的数据,以此来判断数据是否能够被读取和准确地读取(和主机端写入的数据相比较,数据没错误)。基于数据能够被读取和准确地读取来实现对各个卡的性能的测试。The embodiment of the present application further requires protection to simultaneously read the data in each card, so as to judge whether the data can be read and accurately read (compared with the data written by the host, the data is correct). Testing of the performance of individual cards is accomplished based on the fact that the data can be read and accurately read.
图7是本申请的数据同时写入多存储卡的另一实施例原理图。如图7所示,基于此,本申请实施例的主控中还进一步包括一比对电路,更为具体地讲是异或电路。由于是同一笔数据写入到各个卡中,因此主控中的CPU控制从每两个卡中读取数据,将该读取除的数据放入到比对电路中进行异或运算。两个卡中的同一笔数据,数据表达方式是二进制的“0”、“1”,用异或电路来对这些数据进行异或运算处理,若是该两个卡是OK的,那么对从两个卡中读出的数据进行异或运算,异或运算的结果就为“0”;若是两个卡中有一个卡是NG(NotGood,Failed,即失败)的,那么异或运算的结果就为“1”。FIG. 7 is a schematic diagram of another embodiment of the present application for simultaneously writing data to multiple memory cards. As shown in FIG. 7 , based on this, the master control in the embodiment of the present application further includes a comparison circuit, more specifically, an exclusive OR circuit. Since the same data is written to each card, the CPU in the main control controls to read data from every two cards, and puts the read and divided data into the comparison circuit for XOR operation. For the same data in the two cards, the data expression is binary "0", "1", and the XOR circuit is used to perform XOR operation on these data. If the two cards are OK, then the two cards are OK. The data read out from each card is XORed, and the result of XOR operation is "0"; if one of the two cards is NG (NotGood, Failed, that is, failed), then the result of XOR operation is is "1".
具体地,由于是从存储卡中读出数据,其数据读出的方式是一个字节一个字节地读出,因此,数据对比即异或运算是逐字节对比,存储卡的数据读写原理为按照一个字节一个字节地读写。Specifically, since the data is read from the memory card, the data is read out byte by byte. Therefore, the data comparison, that is, the XOR operation, is a byte-by-byte comparison, and the data of the memory card is read and written. The principle is to read and write byte by byte.
进一步,由于数据是由多个字节组成的,因此,比对电路,或者说异或电路实际上是一个字节异或累加电路,数据是连续的,一个字节一个字节地异或运算,实际上是一个累加的逻辑。累加的硬件可以是寄存器。Further, since the data is composed of multiple bytes, the comparison circuit, or the XOR circuit is actually a byte XOR accumulation circuit, the data is continuous, and the XOR operation is performed on a byte by byte basis. , which is actually an additive logic. The accumulated hardware can be a register.
具体地,只要出现一个字节异或运算结果为“1”,则表示有一个卡的测试结果是NG的,那么存储卡的测试结果就可以获知。Specifically, as long as the result of the XOR operation of one byte is "1", it means that the test result of one card is NG, and then the test result of the memory card can be known.
示例性地,图7中有4个卡,卡1和卡2中的数据进行异或运算,卡3和卡4中的数据进行异或运算,若是卡1和卡2中的数据进行异或运算的结果为“0”,卡3和卡4中的数据进行异或运算的结果为“1”,那么表示卡3和卡4中至少有一个卡是NG的,将卡1和卡3中的数据进行异或运算或者将卡1和卡4中的数据进行异或运算;或者将卡2和卡3中的数据进行异或运算或者将卡2和卡4中的数据进行异或运算。如此一定可以对所有卡中的NG,或者说可以对所有卡进行测试。Exemplarily, there are 4 cards in Fig. 7, the data in card 1 and
A与B异或等价于A与B同或取反,即The XOR of A and B is equivalent to the XOR of A and B, i.e.
变形得到上述逻辑代数式。The deformation yields the above-mentioned logical algebra.
对应逻辑电路为两个或非门和一个与门组成。对于8位二进制比较,通过将该逻辑电路串联8组即可。The corresponding logic circuit is composed of two NOR gates and one AND gate. For 8-bit binary comparison, 8 groups of this logic circuit can be connected in series.
对应单个cmos异或门电路,由一级或非门和一级与或非门组成。对于输入A和B,首先经过或非门得到再经过与或非门得到A和B异或输出。Corresponding to a single cmos XOR gate circuit, it consists of a first-level NOR gate and a first-level NAND gate. For inputs A and B, first pass through the NOR gate to get And then through the NOR gate to get A and B XOR output.
真值表:Truth table:
对对存储卡进行测试的流程是:外部数据经过多接口如usb接口,首先输入到SRAM的BULK FIFO等待处理,根据SRAM1235的data数据要求一次2k或者其他,即部分输入,再将FIFO数据根据SRAM1235的读写要求(SRAM需要传递给异或电路data,w/r)对其进行编译码操作,操作完成再返回至SRAM中,根据需要,重新存储到USB或者其他操作。每次写入数据都会覆盖SRAM FIFO之前数据。The process of testing the memory card is as follows: the external data is input to the BULK FIFO of the SRAM through multiple interfaces such as the usb interface for processing. According to the data data of the SRAM1235, 2k or other is required at a time, that is, part of the input, and then the FIFO data is input according to the SRAM1235. The read and write requirements (SRAM needs to be passed to the XOR circuit data, w/r) are encoded and decoded, and the operation is completed and then returned to the SRAM, and re-stored to the USB or other operations as needed. Each write data will overwrite the previous data in the SRAM FIFO.
数据比对举例说明:Data comparison example:
1001 1100 0011 0001 0101 1110 1011 0111(母卡32位二进制数据);1001 1100 0011 0001 0101 1110 1011 0111 (32-bit binary data of the mother card);
9 c 3 1 5 e b 7(32位16进制);9
1001 1100 0011 0011 0101 1100 1011 0111(子卡32位二进制数据);1001 1100 0011 0011 0101 1100 1011 0111 (daughter card 32-bit binary data);
9 c3 35 c b 7(16进制);9 c3 35 c b 7 (hexadecimal);
可见,第4个和第6个8bit位出现错误。It can be seen that the 4th and 6th 8bits have errors.
异或比对结果:XOR comparison result:
0000 0000 0000 0010 0000 0010 0000 0000(2进制);0000 0000 0000 0010 0000 0010 0000 0000 (binary);
0 0 0 2 0 2 0 0(16进制)。0 0 0 2 0 2 0 0 (hexadecimal).
图8是本申请的8位的异或电路图。如图8所示,主要包括两种器件NMOS与PMOS。PMOS1的源极S与PMOS2的漏极D连接,PMOS2的源极分别与PMOS5的栅极G、NMOS3的栅极G、NMOS2的漏极D、NMOS1漏极D连接,PMOS1、PMOS2、NMOS1、NMOS2构成或非门A。PMOS3、PMOS4、NMOS4、NMOS5构成或与非门B。PMOS3的漏极D与PMOS4的漏极D连接,PMOS4的栅极与NMOS4的栅极连接,NMOS4的源极与NMOS5的漏极连接,NMOS4的漏极分别与PMOS5的源极、NMOS3的漏极连接。PMOS5与NMOS3构成非门C。PMOS5的源极与与NMOS3的漏极连接。NMOS对于G极高电平(为1)则源漏极导通,反之PMOS中栅极低电平,源漏极导通。工作原理是:或非门部分对于输入a、b,只有当a、b同时为1(高电平),输出才为高电平。与非门对于输出a、b,只有当a、b同时为1,输出才是0(低电平)。非门对输入取反。FIG. 8 is an 8-bit XOR circuit diagram of the present application. As shown in Figure 8, it mainly includes two devices, NMOS and PMOS. The source S of PMOS1 is connected to the drain D of PMOS2, the source of PMOS2 is connected to the gate G of PMOS5, the gate G of NMOS3, the drain D of NMOS2, and the drain D of NMOS1 respectively, PMOS1, PMOS2, NMOS1, NMOS2 Form the NOR gate A. PMOS3, PMOS4, NMOS4, NMOS5 constitute NOR gate B. The drain D of PMOS3 is connected to the drain D of PMOS4, the gate of PMOS4 is connected to the gate of NMOS4, the source of NMOS4 is connected to the drain of NMOS5, the drain of NMOS4 is respectively connected to the source of PMOS5 and the drain of NMOS3 connect. PMOS5 and NMOS3 constitute NOT gate C. The source of PMOS5 is connected to the drain of NMOS3. For NMOS, the source and drain are turned on when G is very high level (1). On the contrary, in PMOS, the gate is low and the source and drain are turned on. The working principle is: for the input a and b of the NOR gate, only when a and b are 1 (high level) at the same time, the output is high level. For the output a and b of the NAND gate, only when a and b are 1 at the same time, the output is 0 (low level). The NOT gate negates the input.
与非门与非门串联对应逻辑代数式:A与B或非,输出值取反(非门)再与A和B的与非门进行与(对应串联)。NAND gate NAND gate series corresponding logic algebra: A and B or not, the output value is inverted (not gate) and then with the NAND gate of A and B (corresponding in series).
图9是本申请的逻辑电路图。如图9所示,参照代数式中A与B相与,输出值与A与B的或非值再进行或非操作。FIG. 9 is a logic circuit diagram of the present application. As shown in Figure 9, referring to the algebraic formula A and B are combined, and the output value is NOR-operated with the NOR value of A and B.
在本实施例的一些可选的实现方式中,步骤S203、从每两个不同编号的多存储卡中读取所述数据,将读取到的数据存入比对电路中进行异或运算,根据异或运算的结果来判断所述两个不同编号的多存储卡是否正常之后,还可以包括步骤:显示有异常的多存储卡编号。通过设置显示界面,显示出有异常的多存储卡编号,这样方便用户得知哪些多存储卡需要重新测试或者需要进行维修等,方便用户对有异常的多存储卡进行质量跟进。In some optional implementations of this embodiment, in step S203, the data is read from every two multi-memory cards with different numbers, and the read data is stored in a comparison circuit for XOR operation, After judging whether the two multi-memory cards with different numbers are normal according to the result of the exclusive OR operation, the step of: displaying the abnormal multi-memory card numbers. By setting the display interface, the abnormal multi-memory card numbers are displayed, which is convenient for users to know which multi-memory cards need to be re-tested or repaired, etc., and it is convenient for users to follow up the quality of abnormal multi-memory cards.
通过对多存储卡进行编号,将数据同时写入多个多存储卡,毋须依赖人力,能自动化执行存储卡的测试,节省成本且能够提升测试效率,测试可靠且易于实现,可普遍适用于存储卡的测试中。By numbering multiple memory cards, data can be written to multiple multiple memory cards at the same time, without relying on manpower, the test of memory cards can be automated, cost saving and test efficiency can be improved. The test is reliable and easy to implement, and can be widely used in storage card testing.
本领域普通技术人员可以理解实现上述实施例方法中的全部或部分流程,是可以通过计算机可读指令来指令相关的硬件来完成,该计算机可读指令可存储于一计算机可读取存储介质中,该程序在执行时,可包括如上述各方法的实施例的流程。其中,前述的存储介质可为磁碟、光盘、只读存储记忆体(Read-Only Memory,ROM)等非易失性存储介质,或随机存储记忆体(Random Access Memory,RAM)等。Those of ordinary skill in the art can understand that all or part of the processes in the methods of the above embodiments can be implemented by instructing relevant hardware through computer-readable instructions, and the computer-readable instructions can be stored in a computer-readable storage medium. , when the program is executed, it may include the processes of the foregoing method embodiments. The aforementioned storage medium may be a non-volatile storage medium such as a magnetic disk, an optical disk, a read-only memory (Read-Only Memory, ROM), or a random access memory (Random Access Memory, RAM).
应该理解的是,虽然附图的流程图中的各个步骤按照箭头的指示依次显示,但是这些步骤并不是必然按照箭头指示的顺序依次执行。除非本文中有明确的说明,这些步骤的执行并没有严格的顺序限制,其可以以其他的顺序执行。而且,附图的流程图中的至少一部分步骤可以包括多个子步骤或者多个阶段,这些子步骤或者阶段并不必然是在同一时刻执行完成,而是可以在不同的时刻执行,其执行顺序也不必然是依次进行,而是可以与其他步骤或者其他步骤的子步骤或者阶段的至少一部分轮流或者交替地执行。It should be understood that although the various steps in the flowchart of the accompanying drawings are sequentially shown in the order indicated by the arrows, these steps are not necessarily executed in sequence in the order indicated by the arrows. Unless explicitly stated herein, the execution of these steps is not strictly limited to the order and may be performed in other orders. Moreover, at least a part of the steps in the flowchart of the accompanying drawings may include multiple sub-steps or multiple stages, and these sub-steps or stages are not necessarily executed at the same time, but may be executed at different times, and the execution sequence is also It does not have to be performed sequentially, but may be performed alternately or alternately with other steps or at least a portion of sub-steps or stages of other steps.
实施例二
进一步参考图10,作为对上述图2所示方法的实现,本申请提供了一种多存储卡的测试装置的一个实施例,该装置实施例与图2所示的方法实施例相对应,该装置具体可以应用于各种电子设备中。With further reference to FIG. 10 , as an implementation of the method shown in FIG. 2 above, the present application provides an embodiment of a multi-memory card testing device. The device embodiment corresponds to the method embodiment shown in FIG. 2 . The device can be specifically applied to various electronic devices.
如图10所示,本实施例所述的多存储卡的测试装置400包括:获取模块401、写入模块402和判别模块403。其中:As shown in FIG. 10 , the multi-memory
获取模块401,用于获取将数据和多存储卡的编号写入多存储卡的写入命令,所述写入命令包括所述数据和所述编号;an
写入模块402,用于解析所述写入命令,获得所述数据和所述编号,将所述数据按照所述编号写入多存储卡中;A
判别模块403,用于从每两个不同编号的多存储卡中读取所述数据,将读取到的数据存入比对电路中进行异或运算,根据异或运算的结果来判断所述两个不同编号的多存储卡是否正常。The discriminating
通过对多存储卡进行编号,将数据同时写入多个多存储卡,毋须依赖人力,能自动化执行存储卡的测试,节省成本且能够提升测试效率,测试可靠且易于实现,可普遍适用于存储卡的测试中。By numbering multiple memory cards, data can be written to multiple multiple memory cards at the same time, without relying on manpower, the test of memory cards can be automatically performed, cost saving and test efficiency can be improved. The test is reliable and easy to implement, and can be widely used in storage card testing.
参阅图11,为写入模块402一种具体实施方式的结构示意图,写入模块402进一步包括解析模块4021、缓存模块4022和输出模块4023。其中,Referring to FIG. 11 , which is a schematic structural diagram of a specific implementation manner of the
解析模块4021,用于解析所述写入命令,获得所述数据和所述编号;Parsing module 4021, for parsing the write command to obtain the data and the serial number;
缓存模块4022,用于将获得的所述数据缓存至缓存区中;A cache module 4022, configured to cache the obtained data in a cache area;
输出模块4023,用于将缓存区中的数据按照所述编号写入多存储卡中。The output module 4023 is configured to write the data in the buffer area into the multiple memory cards according to the number.
通过设置缓存模块,缓和CPU与I/O设备间速度不匹配的矛盾。减少对CPU的中断频率,放宽对CPU中断响应时间的限制,保护了写入数据的完整性。By setting the cache module, the contradiction between the speed mismatch between the CPU and the I/O device is alleviated. Reduce the interrupt frequency to the CPU, relax the restriction on the CPU interrupt response time, and protect the integrity of the written data.
实施例三
为解决上述技术问题,本申请实施例还提供计算机设备。具体请参阅图12,图12为本实施例计算机设备基本结构框图。To solve the above technical problems, the embodiments of the present application further provide computer equipment. Please refer to FIG. 12 for details. FIG. 12 is a block diagram of the basic structure of a computer device according to this embodiment.
所述计算机设备6包括通过系统总线相互通信连接存储器61、处理器62、网络接口63。需要指出的是,图中仅示出了具有组件存储器61、处理器62和网络接口63的计算机设备6,但是应理解的是,并不要求实施所有示出的组件,可以替代的实施更多或者更少的组件。其中,本技术领域技术人员可以理解,这里的计算机设备是一种能够按照事先设定或存储的指令,自动进行数值计算和/或信息处理的设备,其硬件包括但不限于微处理器、专用集成电路(Application Specific Integrated Circuit,ASIC)、可编程门阵列(Field-Programmable Gate Array,FPGA)、数字处理器(Digital Signal Processor,DSP)、嵌入式设备等。The computer device 6 includes a
所述计算机设备可以是桌上型计算机、笔记本、掌上电脑及云端服务器等计算设备。所述计算机设备可以与用户通过键盘、鼠标、遥控器、触摸板或声控设备等方式进行人机交互。The computer equipment may be a desktop computer, a notebook computer, a palmtop computer, a cloud server and other computing equipment. The computer device can perform human-computer interaction with the user through a keyboard, a mouse, a remote control, a touch pad or a voice control device.
所述存储器61至少包括一种类型的可读存储介质,所述可读存储介质包括闪存、硬盘、多存储卡、卡型存储器(例如,SD或D多存储卡的测试存储器等)、随机访问存储器(RAM)、静态随机访问存储器(SRAM)、只读存储器(ROM)、电可擦除可编程只读存储器(EEPROM)、可编程只读存储器(PROM)、磁性存储器、磁盘、光盘等。在一些实施例中,所述存储器61可以是所述计算机设备6的内部存储单元,例如该计算机设备6的硬盘或内存。在另一些实施例中,所述存储器61也可以是所述计算机设备6的外部存储设备,例如该计算机设备6上配备的插接式硬盘,智能存储卡(Smart Media Card,SMC),安全数字(SecureDigital,SD)卡,闪存卡(Flash Card)等。当然,所述存储器61还可以既包括所述计算机设备6的内部存储单元也包括其外部存储设备。本实施例中,所述存储器61通常用于存储安装于所述计算机设备6的操作系统和各类应用软件,例如多存储卡的测试方法的计算机可读指令等。此外,所述存储器61还可以用于暂时地存储已经输出或者将要输出的各类数据。The
所述处理器62在一些实施例中可以是中央处理器(Central Processing Unit,CPU)、控制器、微控制器、微处理器、或其他数据处理芯片。该处理器62通常用于控制所述计算机设备6的总体操作。本实施例中,所述处理器62用于运行所述存储器61中存储的计算机可读指令或者处理数据,例如运行所述多存储卡的测试方法的计算机可读指令。In some embodiments, the
所述网络接口63可包括无线网络接口或有线网络接口,该网络接口63通常用于在所述计算机设备6与其他电子设备之间建立通信连接。The
通过对多存储卡进行编号,将数据同时写入多个多存储卡,毋须依赖人力,能自动化执行存储卡的测试,节省成本且能够提升测试效率,测试可靠且易于实现,可普遍适用于存储卡的测试中。By numbering multiple memory cards, data can be written to multiple multiple memory cards at the same time, without relying on manpower, the test of memory cards can be automated, cost saving and test efficiency can be improved. The test is reliable and easy to implement, and can be widely used in storage card testing.
实施例四Embodiment 4
本申请还提供了另一种实施方式,即提供一种计算机可读存储介质,所述计算机可读存储介质存储有计算机可读指令,所述计算机可读指令可被至少一个处理器执行,以使所述至少一个处理器执行如上述的多存储卡的测试方法的步骤。The present application also provides another embodiment, that is, to provide a computer-readable storage medium, where the computer-readable storage medium stores computer-readable instructions, and the computer-readable instructions can be executed by at least one processor to The at least one processor is caused to perform the steps of the method for testing multiple memory cards as described above.
通过对多存储卡进行编号,将数据同时写入多个多存储卡,毋须依赖人力,能自动化执行存储卡的测试,节省成本且能够提升测试效率,测试可靠且易于实现,可普遍适用于存储卡的测试中。By numbering multiple memory cards, data can be written to multiple multiple memory cards at the same time, without relying on manpower, the test of memory cards can be automated, cost saving and test efficiency can be improved. The test is reliable and easy to implement, and can be widely used in storage card testing.
通过以上的实施方式的描述,本领域的技术人员可以清楚地了解到上述实施例方法可借助软件加必需的通用硬件平台的方式来实现,当然也可以通过硬件,但很多情况下前者是更佳的实施方式。基于这样的理解,本申请的技术方案本质上或者说对现有技术做出贡献的部分可以以软件产品的形式体现出来,该计算机软件产品存储在一个存储介质(如ROM/RAM、磁碟、光盘)中,包括若干指令用以使得一台终端设备(可以是手机,计算机,服务器,空调器,或者网络设备等)执行本申请各个实施例所述的方法。From the description of the above embodiments, those skilled in the art can clearly understand that the methods of the above embodiments can be implemented by means of software plus a necessary general hardware platform, and of course hardware can also be used, but in many cases the former is better implementation. Based on this understanding, the technical solution of the present application can be embodied in the form of a software product in essence or in a part that contributes to the prior art, and the computer software product is stored in a storage medium (such as ROM/RAM, magnetic disk, CD-ROM), including several instructions to make a terminal device (which may be a mobile phone, a computer, a server, an air conditioner, or a network device, etc.) execute the methods described in the various embodiments of this application.
显然,以上所描述的实施例仅仅是本申请一部分实施例,而不是全部的实施例,附图中给出了本申请的较佳实施例,但并不限制本申请的专利范围。本申请可以以许多不同的形式来实现,相反地,提供这些实施例的目的是使对本申请的公开内容的理解更加透彻全面。尽管参照前述实施例对本申请进行了详细的说明,对于本领域的技术人员来而言,其依然可以对前述各具体实施方式所记载的技术方案进行修改,或者对其中部分技术特征进行等效替换。凡是利用本申请说明书及附图内容所做的等效结构,直接或间接运用在其他相关的技术领域,均同理在本申请专利保护范围之内。Obviously, the above-described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. The accompanying drawings show the preferred embodiments of the present application, but do not limit the scope of the patent of the present application. This application may be embodied in many different forms, rather these embodiments are provided so that a thorough and complete understanding of the disclosure of this application is provided. Although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing specific embodiments, or perform equivalent replacements for some of the technical features. . Any equivalent structure made by using the contents of the description and drawings of the present application, which is directly or indirectly used in other related technical fields, is also within the scope of protection of the patent of the present application.
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5274648A (en) * | 1990-01-24 | 1993-12-28 | International Business Machines Corporation | Memory card resident diagnostic testing |
US20040027881A1 (en) * | 2002-08-08 | 2004-02-12 | Fujitsu Limited | Memory card enabling simplified test process and memory card test method |
CN103366830A (en) * | 2012-03-30 | 2013-10-23 | 点序科技股份有限公司 | Testing device of memory card |
CN105843695A (en) * | 2016-03-15 | 2016-08-10 | 深圳市凯立德科技股份有限公司 | Processing method and device of data storage abnormity, and equipment |
CN113436220A (en) * | 2021-05-28 | 2021-09-24 | 华东师范大学 | Image background estimation method based on depth map segmentation |
-
2022
- 2022-01-20 CN CN202210068159.1A patent/CN114550809B/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5274648A (en) * | 1990-01-24 | 1993-12-28 | International Business Machines Corporation | Memory card resident diagnostic testing |
US20040027881A1 (en) * | 2002-08-08 | 2004-02-12 | Fujitsu Limited | Memory card enabling simplified test process and memory card test method |
CN103366830A (en) * | 2012-03-30 | 2013-10-23 | 点序科技股份有限公司 | Testing device of memory card |
CN105843695A (en) * | 2016-03-15 | 2016-08-10 | 深圳市凯立德科技股份有限公司 | Processing method and device of data storage abnormity, and equipment |
CN113436220A (en) * | 2021-05-28 | 2021-09-24 | 华东师范大学 | Image background estimation method based on depth map segmentation |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116884470A (en) * | 2023-06-27 | 2023-10-13 | 珠海妙存科技有限公司 | Storage product testing method and system, electronic equipment and storage medium |
CN116884470B (en) * | 2023-06-27 | 2024-02-23 | 珠海妙存科技有限公司 | Storage product testing method and system, electronic equipment and storage medium |
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