CN103426788A - Method for manufacturing semiconductor devices and adjusting substrate temperature in integrated system - Google Patents
Method for manufacturing semiconductor devices and adjusting substrate temperature in integrated system Download PDFInfo
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- CN103426788A CN103426788A CN201210159397XA CN201210159397A CN103426788A CN 103426788 A CN103426788 A CN 103426788A CN 201210159397X A CN201210159397X A CN 201210159397XA CN 201210159397 A CN201210159397 A CN 201210159397A CN 103426788 A CN103426788 A CN 103426788A
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Abstract
Provided is a method for manufacturing semiconductor devices and adjusting substrate temperature in an integrated system. The integrated system is a vacuum treatment integrated system. The method for manufacturing the semiconductor devices includes the steps of placing a substrate in a second processing chamber with a second temperature after the substrate is subjected to the first processing in a first processing chamber with a first temperature, then bringing heat conduction gas to the second processing chamber so as to enable the pressure of the second processing chamber to reach a preset pressure and enable the second processing chamber to keep for a period of time within the preset pressure, and cooling the substrate due to the fact that the heat of the substrate can be taken away under the action of the heat conduction gas, or heating up the substrate due to the fact that the heat of the substrate is supplemented. Therefore, the temperature of the substrate can be rapidly, stably and accurately adjusted to the needed temperature on the premise that a cooling chamber is not used, and the method can ensure reproducibility and stability of the second treatment process in the manufacturing process of the semiconductor devices.
Description
Technical field
The invention belongs to field of semiconductor manufacture, particularly relate to a kind of method of regulating substrate temperature; In addition, the invention still further relates to a kind of method of making semiconductor device in the vacuum treatment integrated system.
Background technology
The semiconductor device manufacture is exactly in upper chemistry or the physical treatment of carrying out series of complex of substrate (as silicon chip), and in brief, these processing can be divided into four large basic classes: film making, photoetching, etching, doping.After in a semiconductor equipment, substrate being processed, often need substrate is transported in another semiconductor equipment, substrate is carried out to next step processing, until semiconductor device forms.For Production Time, the shared physical space of saving equipment for making semiconductor device of reduction semiconductor device, some semiconductor device can complete in the vacuum treatment integrated system.Described vacuum treatment integrated system at least comprises that two for the treatment chamber that substrate is processed, a transmission cavity for transmission substrate under vacuum environment, utilize before described treatment chamber carries out described processing to described substrate, need make treatment chamber remain on vacuum state, in described transmission cavity, be provided with a plurality of for the manipulator that clamps substrate under vacuum environment, to transmit substrate.Utilize described vacuum treatment integrated system to make in the process of semiconductor device, at the first temperature, substrate is processed sometimes, then substrate is sent in the treatment chamber with second temperature, so that substrate is carried out to the second processing.Described the first temperature, the second temperature unequal, the first temperature is greater than or less than the second temperature.In this case, for guaranteeing that substrate has Disposal quality preferably and can control more accurately the second treatment process parameter of substrate, need be regulated the temperature of substrate, substrate be lowered the temperature or hyperthermic treatment, so that substrate is by the first adjustment to the second temperature.The temperature control method of substrate has multiple, yet often there are many weak points in existing temperature control method, as special cooling chamber etc. is grown, needed to use to the adjustment time.
With PECVD(Plasma Enhanced Chemical Vapor Deposition, plasma reinforced chemical vapour deposition) integrated system is example, it is a kind of application vacuum treatment integrated system very widely, it comprises: at least two treatment chamber of utilizing pecvd process deposit film on substrate, one for transmitting the transmission cavity of substrate under vacuum environment, two treatment chamber are respectively the first treatment chamber, the second treatment chamber, form thin film on the substrate that is positioned at the first treatment chamber after, utilize the manipulator in transmission cavity that substrate is sent to the second treatment chamber, to form another layer film on substrate.PECVD is the abbreviation of plasma enhanced chemical vapor deposition, it is that plasma discharge by reacting gas produces the deposition technique of active group to promote that film generates, it can significantly reduce the temperature of chemical vapor deposition (CVD) reaction, and the CVD plated film reaction that some need to just can be carried out originally under hot conditions can be carried out at a lower temperature.The major advantage of PECVD is to be adapted at the large-area film of preparation under cryogenic conditions, and can make semiconductive thin film or the dielectric film of high-quality, and therefore, it obtains a wide range of applications in fields such as thin-film solar cells, flat-panel monitors in recent years.
The example that is made as with the amorphous silicon/microcrystalline silicon tandem thin-film solar cells, substrate (as glass substrate) can be placed in to the first treatment chamber of PECVD integrated system and form one deck opto-electronic conversion layer film on substrate, as amorphous silicon (amorphous silicon, a-Si) film, then, utilize the manipulator in transmission cavity substrate to be placed in to the second treatment chamber remained under vacuum environment, and form another layer of opto-electronic conversion layer film on substrate, as microcrystal silicon (microcrystalline silicon, μ-Si) film, to form the electric layer of amorphous silicon/microcrystalline silicon tandem solar cell.
In area of solar cell, the technological temperature of the general amorphous silicon membrane i.e. temperature of the first treatment chamber is 170 ℃ ~ 300 ℃, and the temperature that the technological temperature of microcrystalline silicon film is the second treatment chamber is 130 ℃ ~ 190 ℃, and the technological temperature of amorphous silicon membrane is greater than the technological temperature of microcrystalline silicon film.Suppose that the required temperature of the first treatment chamber is that 200 ℃, the required temperature of the second treatment chamber are 160 ℃, on substrate after deposition of amorphous silicon films, the temperature of substrate equates with the temperature of the first treatment chamber, when the substrate that utilizes manipulator in transmission cavity will be formed with amorphous silicon membrane is sent in the second treatment chamber, the temperature of substrate can be greater than the temperature of the second treatment chamber.If start deposition micro crystal silicon film on substrate when the temperature of substrate also is not reduced to the temperature of the second treatment chamber, can make the quality of microcrystalline silicon film very unstable, and, while under this condition, depositing microcrystalline silicon film, the temperature of substrate can not always remain on a stationary value, can affect repeatability and the stability of microcrystalline silicon film depositing operation.
Therefore, on substrate before the deposition micro crystal silicon film, need, to the substrate processing of lowering the temperature, be reduced to microcrystalline silicon film with the temperature by substrate and deposit required technological temperature.Generally can utilize following several method to the substrate processing of lowering the temperature:
Method one: the manipulator in transmission cavity by substrate after the first treatment chamber for deposition of amorphous silicon films is taken out, make substrate naturally cooling a period of time on manipulator, until reaching microcrystalline silicon film, the temperature of substrate deposits required technological temperature, then, substrate is sent to the second treatment chamber for the deposition micro crystal silicon film.
Method two: the manipulator in transmission cavity by substrate after the first treatment chamber for deposition of amorphous silicon films is taken out, substrate is sent in special cooling chamber, cooling system in cooling chamber can be controlled the cooling time of substrate, when the temperature of substrate reaches microcrystalline silicon film and deposits required technological temperature, then substrate is sent to the second treatment chamber for the deposition micro crystal silicon film.
Method three: the manipulator in transmission cavity by substrate after the first treatment chamber for deposition of amorphous silicon films is taken out, substrate directly is sent to the second treatment chamber for the deposition micro crystal silicon film, makes substrate naturally cool to microcrystalline silicon film and deposit required technological temperature.
Yet, all there is shortcomings in above-mentioned several method: in method one, method three, substrate is naturally cooling under vacuum environment, not only cooling time is long, had a strong impact on the production capacity of PECVD integrated system, and method one also can take the manipulator in transmission cavity for a long time, likely can cause the not enough consequence of manipulator, and then cause transmission cavity to become the bottleneck of thin-film solar cells manufacture craft; In method two, substrate is cooling in special cooling chamber, not only need in the PECVD integrated system, set up new chamber, increase equipment cost, and, if due to occupied and can not in time cooling good substrate be sent away, will causing the temperature of substrate to be less than microcrystalline silicon film, manipulator deposits required technological temperature.
Summary of the invention
The purpose of this invention is to provide a kind of method of making semiconductor device in the vacuum treatment integrated system, temperature required under the prerequisite not using cooling chamber, the temperature of substrate is adjusted to fast, steadily, accurately, thus can guarantee repeatability and the stability of semiconductor device treatment process in manufacturing process.
Another object of the present invention is to provide a kind of method of regulating substrate temperature, to be adjusted to fast, steadily, accurately temperature required by the temperature of substrate under the prerequisite not using cooling chamber.
For achieving the above object, the invention provides a kind of method of making semiconductor device in the vacuum treatment integrated system, described integrated system comprise at the first temperature to substrate carry out the first treatment chamber of the first processing, for substrate being carried out the second treatment chamber of the second processing at the second temperature, described method comprises:
Substrate is placed in to described the first treatment chamber, described substrate is carried out to described first and process;
To be placed in described the second treatment chamber through the described first substrate of processing, and in described the second treatment chamber, pass into heat transfer gas, the pressure of controlling described the second treatment chamber reaches preset pressure;
Make the pressure of described the second treatment chamber remain on a period of time in described preset pressure, then described substrate is carried out to described second and process.
Alternatively, described heat transfer gas at least comprises a kind of in hydrogen, nitrogen, argon gas, helium.
Alternatively, described heat transfer gas is at least a part of substrate being carried out to described the second processing desired gas.
Alternatively, described heat transfer gas is processed desired gas for substrate being carried out to described second, and described preset pressure is with in described the second treatment chamber, substrate to be carried out to the required pressure of described the second processing identical.
Alternatively, described integrated system also comprises transmission cavity, and described the first treatment chamber, the second treatment chamber connect described transmission cavity, and described substrate is sent to described the second treatment chamber by described transmission cavity after processing through described first in the first treatment chamber.
Alternatively, described vacuum treatment integrated system is the PECVD integrated system, and described the first treatment chamber is for deposition of amorphous silicon films at described the first temperature, and described the second treatment chamber for depositing microcrystalline silicon film at described the second temperature.
Alternatively, described substrate is glass substrate.
Alternatively, described heat transfer gas is hydrogen.
Alternatively, described preset pressure is 2mbar ~ 6mbar.
Alternatively, described preset pressure is 4mbar ~ 6mbar.
Alternatively, the flow of described heat transfer gas is 40slm ~ 140slm.
For realizing above-mentioned another purpose, the invention provides a kind of method of regulating substrate temperature, comprising:
The substrate that will have the first temperature is placed in the treatment chamber with second temperature, in described treatment chamber, passes into heat transfer gas, and the pressure of controlling described treatment chamber reaches preset pressure;
Make the pressure of described treatment chamber remain on a period of time in described preset pressure.
Alternatively, described heat transfer gas at least comprises a kind of in hydrogen, nitrogen, argon gas, helium.
Alternatively, described substrate is glass substrate.
Alternatively, described treatment chamber is the vacuum treatment chamber.
Alternatively, described treatment chamber is the PECVD chamber.
Compared with prior art, the present invention has the following advantages:
In method of making semiconductor device in the vacuum treatment integrated system provided by the present invention, after in thering is the first treatment chamber of the first temperature, substrate being carried out to the first processing, substrate is placed in to the second treatment chamber with second temperature, then pass into heat transfer gas so that its pressure reaches preset pressure in the second treatment chamber, and make the second treatment chamber remain on a period of time in preset pressure, heat at the effect infrabasal plate of heat transfer gas can be pulled away that substrate is carried out to fast cooling, perhaps the heat of substrate is supplemented that substrate is rapidly heated, in addition, because the second treatment chamber remains in preset pressure, not only can make the temperature of substrate be adjusted to reposefully temperature required, and can with the temperature by substrate, be adjusted to accurately temperature required by the size of controlling preset pressure, repeatability and the stability of semiconductor device second treatment process in manufacturing process have been guaranteed, be that substrate carries out the second processing under accurate temperature conditions,
And, can process the gap of required time and the temperature adjustment time that temperature adjustment becomes original control substrate according to the first processing and second, can reduce to greatest extent the idle waiting time of the first treatment chamber or the second treatment chamber, make the vacuum treatment integrated system in the quantity-produced state, thereby farthest improve the production capacity of vacuum treatment integrated system;
In addition, when heat transfer gas is at least when substrate is carried out to the second processing desired gas a part of, can reduce the cost of manufacture of semiconductor device, when heat transfer gas for substrate is carried out to the second processing desired gas, and preset pressure with in the second treatment chamber, substrate is carried out to the required pressure of the second processing when identical, can save the pressure regulation step of the second processing, reduce the fabrication cycle of semiconductor device.
Moreover the present invention does not use special cooling chamber in the vacuum treatment integrated system, reduced the cost of vacuum treatment integrated system, reduced taking of manipulator in the transmission cavity, guarantee that transmission cavity can not become the bottleneck of semiconductor device fabrication process.
The method of adjusting substrate temperature provided by the present invention can be applied in multiple occasion temperature required under the prerequisite not using cooling chamber, the temperature of substrate is adjusted to fast, steadily, accurately, has applicability widely.
The accompanying drawing explanation
Fig. 1 is that the present invention makes the flow chart of semiconductor device in the vacuum treatment integrated system;
Fig. 2 is the second treatment chamber structural representation of a kind of vacuum treatment integrated system in an embodiment of the present invention's method of making semiconductor device in the vacuum treatment integrated system;
Fig. 3 is the structural representation of a kind of vacuum treatment integrated system in an embodiment of the present invention's method of making semiconductor device in the vacuum treatment integrated system, and described vacuum treatment integrated system is the PECVD integrated system.
Embodiment
Fig. 1 is that the present invention makes the flow chart of semiconductor device in the vacuum treatment integrated system, and as shown in Figure 1, the manufacture method of described semiconductor device comprises:
S1: substrate is placed in to the first treatment chamber;
S2: substrate is carried out to the first processing;
S3: will be placed in through the substrate of the first processing the second treatment chamber;
S4: pass into heat transfer gas in the second treatment chamber, the pressure of controlling the second treatment chamber reaches preset pressure;
S5: make the pressure of the second treatment chamber remain on a period of time in preset pressure;
S6: substrate is carried out to the second processing.
Below in conjunction with accompanying drawing, by specific embodiment, technical scheme of the present invention is carried out to clear, complete description, obviously, described embodiment is only the part of embodiment of the present invention, rather than they are whole.According to these embodiment, those of ordinary skill in the art is obtainable all other execution modes under the prerequisite without creative work, all belong to protection scope of the present invention.
In method of making semiconductor device in the vacuum treatment integrated system provided by the present invention, described vacuum treatment integrated system comprise at the first temperature to substrate carry out the first treatment chamber of the first processing, for substrate being carried out the second treatment chamber of the second processing at the second temperature, the method of described making semiconductor device comprises: substrate is placed in to the first treatment chamber, substrate is carried out to the first processing; To be placed in through the substrate of the first processing the second treatment chamber, and in the second treatment chamber, pass into heat transfer gas, the pressure of controlling the second treatment chamber reaches preset pressure; Make the pressure of the second treatment chamber remain on a period of time in preset pressure, with by substrate by the first adjustment to the second temperature, then substrate is carried out to the second processing.
Before substrate is carried out to described the first processing, need make the first treatment chamber remain on vacuum state, and make the first treatment chamber remain on the first temperature, then under the condition of other technological parameter, substrate be carried out to the first processing.After the first processing, the temperature of substrate also reaches the first temperature.Then, substrate is placed in to the second treatment chamber.Before substrate is carried out to the second processing, the second treatment chamber is to remain on vacuum state, and the second treatment chamber remains on the second temperature.Described the second temperature and the first temperature are unequal, for guaranteeing substrate, have preferably the second Disposal quality, the temperature of substrate need be adjusted to the second temperature by the first temperature.
Fig. 2 is the second treatment chamber structural representation of a kind of vacuum treatment integrated system in an embodiment of the present invention's method of making semiconductor device in the vacuum treatment integrated system, and as shown in Figure 2, the second treatment chamber 200 comprises: air inlet 11; Gas outlet 12; For supporting substrate 10 and double as the pedestal 13 of bottom electrode; Be with pedestal 13 top electrode 14 be oppositely arranged.
Air inlet 11 is connected with inlet duct 15, in order to can in the second treatment chamber 200, pass into gas.Flow control component (MFC) 16 can be set, to control the flow of gas between air inlet 11 and inlet duct 15.Also can between flow control component 16 and air inlet 11, pneumatic operated valve 17 be set, when opening pneumatic operated valve 17, can pass into gas to air inlet 11, when closing pneumatic operated valve 17, can stop passing into gas to air inlet 11.
Also can be provided with some pores (not shown) in top electrode 14, so that pass into the gas uniform of the second treatment chamber 200, be distributed in substrate 10 tops.
The second treatment chamber 200 also comprises heater (not shown), in order to the temperature of the second treatment chamber 200 can be adjusted to the second required temperature.Described heater can be arranged on pedestal 13 inside, and certainly, described heater also can be arranged on other position of the second treatment chamber 200.
When substrate 10 has just been put into to the second treatment chamber 200, the temperature of the second treatment chamber 200 is the second temperature, for the temperature that makes substrate 10 reaches the second temperature, provide heat transfer gas 21 by inlet duct 15, described heat transfer gas 21 refers to that a kind of heat of object that can temperature is high passes to the gas of the object that temperature is low.Heat transfer gas 21 is led in the second treatment chamber 200 via air inlet 11, and is evenly distributed on substrate 10 tops by the pore be arranged in top electrode 14.When the pressure of the second treatment chamber 200 reaches preset pressure, the pressure of controlling the second treatment chamber 200 remains on a period of time in described preset pressure: when the first temperature is greater than the second temperature, be that the temperature of substrate 10 is during higher than the temperature of the second treatment chamber 200, under the effect of heat transfer gas 21, the heat of substrate 10 can be pulled away in order to substrate 10 is carried out to fast cooling; When the first temperature is less than the second temperature, be the temperature of substrate 10 during lower than the temperature of the second treatment chamber 200, under the effect of heat transfer gas 21, the heat of substrate 10 can be supplemented in order to substrate 10 is rapidly heated.
Because the second treatment chamber 200 remains in preset pressure, not only can make the temperature of substrate 10 be adjusted to reposefully temperature required i.e. the second temperature, and can with the temperature by substrate 10, be adjusted to accurately temperature required by the size of controlling preset pressure, guaranteed repeatability and the stability of semiconductor device second treatment process in manufacturing process, substrate 10 carries out the second processing under accurate temperature conditions.
When the temperature of substrate 10 reaches the second temperature, can carry out the second processing to substrate 10 immediately, also can be incubated substrate 10, again substrate 10 is carried out to the second processing after insulation a period of time.Concrete, can adjust according to actual conditions the temperature retention time of the second treatment chamber.
Substrate is adjusted to the required time of the second temperature by the first temperature and can utilizes several different methods to control.Method one: can pass through to select the temperature adjustment time of the heat transfer gas of different specific heat capacities with the conversion substrate.For reducing the temperature adjustment time of substrate, can select the relatively large heat transfer gas of specific heat capacity, for increasing the temperature adjustment time of substrate, can select the heat transfer gas of specific heat capacity less.In the present embodiment, described heat transfer gas is including, but not limited to hydrogen, nitrogen, argon gas, helium, and described heat transfer gas at least comprises a kind of in hydrogen, nitrogen, argon gas, helium.With nitrogen, argon gas, helium, compare, the specific heat capacity maximum of hydrogen, its thermal conduction effect the best, therefore preferably, described heat transfer gas is hydrogen.In addition, when according to the temperature adjustment time, selecting heat transfer gas, gas that also can be required according to the second processing is selected heat transfer gas, the heat transfer gas of selecting is at least a part of substrate being carried out to the second processing desired gas, substrate is being adjusted to when temperature required, can close immediately the gas outlet of the second treatment chamber, to continue utilizing this heat transfer gas to carry out the second processing, thereby reduce the cost of manufacture of whole semiconductor device.For example, can use hydrogen, silicon-containing gas when deposition of amorphous silicon films on substrate or microcrystalline silicon film, and hydrogen is also a kind of heat transfer gas preferably just, in this case, just can select hydrogen as heat transfer gas, after substrate is adjusted to the second temperature, continue to pass into silicon-containing gas (have and also need to pass into if required hydrogen partial) in the second treatment chamber, to form amorphous silicon membrane or microcrystalline silicon film.
Method two: can be by selecting the temperature adjustment time of different preset pressure with the conversion substrate.For reducing the temperature adjustment time of substrate, can select relatively large preset pressure; For increasing the temperature adjustment time of substrate, can select the preset pressure of less.In addition, when heat transfer gas when substrate is carried out to the required all gas of the second processing, when according to the temperature adjustment time, selecting preset pressure, pressure that also can be required according to the second processing is selected preset pressure, when controlling the temperature adjustment time, also can save the pressure regulation step of the second processing simultaneously, reduced the fabrication cycle of semiconductor device.For example, when substrate is carried out to the second processing, when the required pressure of the second treatment chamber is 2.5mbar, can in the second treatment chamber, pass into the required gas of the second processing, and the pressure that makes the second treatment chamber remains on 2.5mbar a period of time, after the temperature of substrate reaches the second temperature, then other required process conditions of the second processing (as applying radio-frequency voltage) are set, so that substrate is carried out to the second processing.
On theory, it is more short better that substrate is adjusted to the required time of the second temperature by the first temperature.But temperature adjustment speed is too fast, can use more heat transfer gas, cause the temperature adjustment cost higher; In addition, likely there is difference in the required time of the first processing and the second processing, if temperature adjustment speed too soon or too slow, likely can cause the idle waiting time of the first treatment chamber or the second treatment chamber longer, so that affect the production capacity of vacuum treatment integrated system.Therefore, consider above-mentioned factor, need become the original substrate temperature adjustment time of controlling according to gap and the temperature adjustment of the first processing and the second processing required time, to reduce to greatest extent the idle waiting time of the first treatment chamber or the second treatment chamber, make the vacuum treatment integrated system in the quantity-produced state, thereby farthest improve the production capacity of vacuum treatment integrated system.It should be noted that, those skilled in the art should know, and in the temperature adjustment process of substrate, should control the second treatment chamber and can not be arranged under other technological parameter condition (as being applied with radio-frequency voltage), to avoid heat transfer gas and substrate, react.
Continue shown in ginseng Fig. 2, when the pressure of the second treatment chamber 200 reaches preset pressure, the method that the pressure of controlling the second treatment chamber 200 remains on described preset pressure at least comprises two kinds: method one, when to the second treatment chamber 200, passing into heat transfer gas 21, utilize the gases of vacuum system 18 from 12 extraction the second treatment chamber 200 of gas outlet, and guarantee that the pressure of the second treatment chamber 200 remains at preset pressure; Method two, to before passing into heat transfer gas 21 in the second treatment chamber 200, can close the gas outlet 12 of the second treatment chamber 200, like this, after the pressure of the second treatment chamber 200 reaches preset pressure, can stop continuing to pass into heat transfer gas in the second treatment chamber 200, the pressure of the second treatment chamber 200 is kept.With method one, compare, method two can be used relatively less heat transfer gas, has reduced the temperature adjustment cost.
Described vacuum treatment integrated system also comprises for transmit the transmission cavity of substrate under vacuum environment, described the first treatment chamber, the second treatment chamber connect described transmission cavity, can utilize like this manipulator in transmission cavity that substrate is sent to the first treatment chamber with first temperature from entering the sheet chamber, so that substrate is carried out to the first processing.After the first processing, utilize the manipulator in transmission cavity that substrate is sent in the second treatment chamber, to regulate the temperature of substrate.
It can be the semiconductor fabrication process such as dry etching, deposition that described the first processing, second is processed, and described deposition comprises chemical vapour deposition (CVD) (chemical vapor deposition is called for short CVD).
Substrate described in the present invention can be conventional Semiconductor substrate, as silicon substrate, silicon-Germanium substrate, silicon-on-insulator (silicon on insulator, be called for short SOI) substrate etc., can be formed with semiconductor device on described Semiconductor substrate, as transistor, electric capacity, resistance, rectifier etc.; Described substrate can also be solar cell substrate, as glass substrate, plastics, metal, stainless steel etc., can be formed with the part-structure of solar cell on described solar cell substrate, as the transparent conductive oxide as electrode (transparent conductive oxide is called for short TCO) layer, photoelectric conversion layer (photoelectric layer) etc.; Described substrate can also be the liquid crystal display substrate, as glass substrate etc., can be formed with the part-structure of liquid crystal display on described liquid crystal display substrate, as transparent conductive oxide (transparent conductive oxide, abbreviation TCO) layer, thin-film transistor (thin film transistor is called for short TFT), diode (diode) etc.Certainly, described substrate is not limited to the present embodiment, and it can also be other substrate that is suitable for it is implemented semiconductor technology, at this, differs one for example.
Described first treatment chamber of the integrated system of vacuum treatment described in the present invention, the quantity of the second treatment chamber can be one or more, in order to can be processed a plurality of substrates in the vacuum treatment integrated system simultaneously, to improve the production capacity of vacuum treatment integrated system.In addition, the quantity of the first treatment chamber, the second treatment chamber can equate also can be unequal, need process the quantity ratio that the required time adjusts the first treatment chamber and the second treatment chamber according to the first processing, second, farthest to optimize the processing compound of the first treatment chamber and the second treatment chamber: when the time of the first processing is less than the time of the second processing, can make the quantity of the second treatment chamber be greater than the quantity of the first treatment chamber; When the time of the first processing is greater than the time of the second processing, can make the quantity of the first treatment chamber be greater than the quantity of the second treatment chamber.
The integrated system of vacuum treatment described in the present invention also can comprise other chamber, as the 3rd treatment chamber, is managed chamber everywhere ... enter sheet chamber, slice chamber.Described the 3rd treatment chamber, is managed chamber everywhere ... be respectively used to substrate carry out the 3rd processing, the reason everywhere ... describedly enter the sheet chamber and be transported to the substrate of vacuum treatment integrated system for placement, described slice chamber is for placing the substrate of processing through the vacuum treatment integrated system, described transmission cavity is also managed chamber everywhere with described the 3rd treatment chamber ... advance the connections such as sheet chamber, slice chamber, in order to substrate can be sent to the precalculated position of vacuum treatment integrated system.After carrying out described the second processing, can utilize the manipulator in transmission cavity that substrate is sent in other chamber in the vacuum treatment integrated system, substrate is carried out to other processing, and then substrate is sent in the slice chamber; After the second processing, also can directly substrate be sent in the slice chamber.The described semiconductor device formed can be the part of integrated circuit, can also be liquid crystal display or solar cell.
In view of the major advantage of PECVD is to be adapted at the large-area film of preparation under cryogenic conditions, and can make semiconductive thin film or the dielectric film of high-quality, and it obtains a wide range of applications in field of thin film solar cells in recent years, therefore the PECVD integrated system of making thin-film solar cells of take in the present embodiment is example, the method for making semiconductor device in the vacuum treatment integrated system is done to concrete the introduction.Fig. 3 is the structural representation of a kind of vacuum treatment integrated system in an embodiment of the present invention's method of making semiconductor device in the vacuum treatment integrated system, described vacuum treatment integrated system is the PECVD integrated system, as shown in Figure 3, described PECVD integrated system 1 comprises the first treatment chamber 100, the second treatment chamber 200, the first treatment chamber 100 is for deposition of amorphous silicon films at the first temperature, and the second treatment chamber 200 for depositing microcrystalline silicon film at the second temperature.PECVD integrated system 1 also comprises into sheet chamber 300, slice chamber 400, for transmit the transmission cavity 500 of substrate under vacuum environment, enter sheet chamber 300 and be transported to the substrate of PECVD integrated system 1 for placement, slice chamber 400 is for placing the substrate of processing through PECVD integrated system 1, in transmission cavity 500, be provided with a plurality of for clamping the manipulator of substrate, transmission cavity 500 and the first treatment chamber 100, the second treatment chamber 200, enter sheet chamber 300, slice chamber 400 connects, in order to substrate can be sent in the first treatment chamber 100 by entering sheet chamber 300, with deposition of amorphous silicon films on substrate, by the first treatment chamber 100, be sent in the second treatment chamber 200 again, with deposition micro crystal silicon film on substrate, by the second treatment chamber 200, be sent in slice chamber 400 again.
Generally, the sedimentation time of amorphous silicon membrane is 25min ~ 35min, and the sedimentation time of microcrystalline silicon film is 50min ~ 70min, and the sedimentation time of microcrystalline silicon film is generally the twice of amorphous silicon membrane sedimentation time.For substrate after making to form amorphous silicon membrane on substrate can directly be sent in the second treatment chamber 200 then to form microcrystalline silicon film, thereby increase the production capacity of PECVD integrated system 1, in PECVD integrated system 1, the quantity of the first treatment chamber 100 and the second treatment chamber 200 is than being 1:2.
Described substrate is solar cell substrate, as glass substrate, plastics, metal, stainless steel etc., can be formed with the part-structure of solar cell on described solar cell substrate, as the transparent conductive oxide as electrode (transparent conductive oxide is called for short TCO) layer, photoelectric conversion layer (photoelectric layer) etc.
Utilize the manipulator in transmission cavity 500 that substrate is sent to the first treatment chamber 100 with first temperature from entering sheet chamber 300, described the first temperature is 170 ℃ ~ 300 ℃, and the structure of the first treatment chamber 100 can be with reference to figure 2.Then, can in the first treatment chamber 100, pass into silicon-containing gas (as SiH
4) and H
2, and apply high frequency electric source to top electrode, the bottom electrode of the first treatment chamber 100, to form amorphous silicon membrane on substrate.After having deposited amorphous silicon membrane, the temperature of substrate is also the first temperature.
Then, utilize the manipulator in transmission cavity 500 substrate to be sent to from the first treatment chamber 100 in the second treatment chamber 200 with second temperature, described the second temperature is 130 ℃ ~ 190 ℃, and the temperature of amorphous silicon membrane deposition is higher than the temperature of microcrystalline silicon film deposition usually, therefore, need be to the substrate processing of lowering the temperature.
As shown in Figure 2, inlet duct 15 provides heat transfer gas 21, and described heat transfer gas 21 is led in the second treatment chamber 200 via air inlet 11.In the present embodiment, heat transfer gas 21 is including, but not limited to hydrogen, nitrogen, argon gas, helium, and heat transfer gas 21 at least comprises a kind of in hydrogen, nitrogen, argon gas, helium.With nitrogen, argon gas, helium, compare, the specific heat capacity maximum of hydrogen, its thermal conduction effect the best, therefore preferably, described heat transfer gas is hydrogen; And, the required gas of deposition micro crystal silicon film also comprises hydrogen, like this, when selecting hydrogen, as heat transfer gas, the temperature of substrate is adjusted to the required temperature of deposition micro crystal silicon film, can close immediately the gas outlet of the second treatment chamber, to continue to utilize the hydrogen in the second treatment chamber, on the amorphous silicon membrane of substrate, to form microcrystalline silicon film, saved the cost of manufacture of semiconductor device.Certainly, also can select nitrogen, argon gas, helium as heat transfer gas, but the required temperature fall time of substrate can lengthen.
When the pressure of the second treatment chamber 200 reaches preset pressure, the pressure of controlling the second treatment chamber 200 remains on a period of time in described preset pressure.Concrete, can adjust according to actual conditions the temperature retention time of the second treatment chamber.The inventor is through evidence, when heat transfer gas is hydrogen, and when to make the preset pressure of the second treatment chamber be 2mbar ~ 6mbar, the second treatment chamber remained under this pressure and approximately after 200 seconds, the temperature of substrate can be adjusted to the second temperature accurately.Preferably, when heat transfer gas is hydrogen, the preset pressure that can make the second treatment chamber is 4mbar ~ 6mbar, and the flow of heat transfer gas is 40slm ~ 140slm.In one embodiment of the invention, the preset pressure of the second treatment chamber is 5mbar.Because the temperature fall time of substrate is shorter, can not affect the production capacity of vacuum treatment integrated system, even can also reduce the idle waiting time of the second treatment chamber, guarantee that the second treatment chamber is always in continuous production status.
Continue shown in ginseng Fig. 2, when the pressure of the second treatment chamber 200 reaches preset pressure, the method that the pressure of controlling the second treatment chamber 200 remains on described preset pressure at least comprises two kinds: method one, when to the second treatment chamber 200, passing into heat transfer gas 21, utilize the gases of vacuum system 18 from 12 extraction the second treatment chamber 200 of gas outlet, and guarantee that the pressure of the second treatment chamber 200 remains at preset pressure; Method two, to before passing into heat transfer gas 21 in the second treatment chamber 200, can close the gas outlet 12 of the second treatment chamber 200, like this, after the pressure of the second treatment chamber 200 reaches preset pressure, can stop continuing to pass into heat transfer gas in the second treatment chamber 200, the pressure of the second treatment chamber 200 is kept.With method one, compare, method two can be used relatively less heat transfer gas, has reduced the temperature adjustment cost.
After the temperature of substrate reaches the second temperature, in the second treatment chamber, pass into silicon-containing gas (as SiH
4) and H
2, and apply high frequency electric source to top electrode, the bottom electrode of the second treatment chamber, to form microcrystalline silicon film on substrate.Form microcrystalline silicon film on substrate after, can directly substrate be sent in the slice chamber, after other processing, can form the amorphous silicon/microcrystalline silicon tandem solar cell.
The present invention also provides a kind of method of regulating substrate temperature, and described method comprises: the substrate that will have the first temperature is placed in the treatment chamber with second temperature, in treatment chamber, passes into heat transfer gas, and the pressure of controlling treatment chamber reaches preset pressure; Make the pressure for the treatment of chamber remain on a period of time in preset pressure.After a period of time, under the effect of heat transfer gas, the heat of substrate can be pulled away that substrate is carried out to fast cooling, or the heat of substrate can be supplemented that substrate is rapidly heated, thereby the substrate rapid adjustment is extremely temperature required.Because treatment chamber remains in preset pressure, not only can make the temperature of substrate be adjusted to reposefully temperature required, and can be adjusted to accurately temperature required with the temperature by substrate by the size of controlling preset pressure.Described heat transfer gas at least comprises a kind of in hydrogen, nitrogen, argon gas, helium.As wherein a kind of application, described substrate is glass substrate, and described treatment chamber is the vacuum treatment chamber, concrete, is the PECVD chamber.Utilize the method for described adjusting substrate temperature to be heated up or to lower the temperature glass substrate.
The method of adjusting substrate temperature provided by the present invention can be applied in and be adjusted to fast, steadily, accurately temperature requiredly in multiple occasion with the temperature by substrate, has applicability widely.
In sum, compared with prior art, the present invention has the following advantages:
In method of making semiconductor device in the vacuum treatment integrated system provided by the present invention, after in thering is the first treatment chamber of the first temperature, substrate being carried out to the first processing, substrate is placed in to the second treatment chamber with second temperature, then pass into heat transfer gas so that its pressure reaches preset pressure in the second treatment chamber, and make the second treatment chamber remain on a period of time in preset pressure, heat at the effect infrabasal plate of heat transfer gas can be pulled away that substrate is carried out to fast cooling, perhaps the heat of substrate is supplemented that substrate is rapidly heated, in addition, because the second treatment chamber remains in preset pressure, not only can make the temperature of substrate be adjusted to reposefully temperature required, and can with the temperature by substrate, be adjusted to accurately temperature required by the size of controlling preset pressure, repeatability and the stability of semiconductor device second treatment process in manufacturing process have been guaranteed, be that substrate carries out the second processing under accurate temperature conditions,
And, can process the gap of required time and the temperature adjustment time that temperature adjustment becomes original control substrate according to the first processing and second, can reduce to greatest extent the idle waiting time of the first treatment chamber or the second treatment chamber, make the vacuum treatment integrated system in the quantity-produced state, thereby farthest improve the production capacity of vacuum treatment integrated system;
In addition, when heat transfer gas is at least when substrate is carried out to the second processing desired gas a part of, can reduce the cost of manufacture of semiconductor device, when heat transfer gas for substrate is carried out to the second processing desired gas, and preset pressure with in the second treatment chamber, substrate is carried out to the required pressure of the second processing when identical, can save the pressure regulation step of the second processing, reduce the fabrication cycle of semiconductor device.
Moreover the present invention does not use special cooling chamber in the vacuum treatment integrated system, reduced the cost of vacuum treatment integrated system, reduced taking of manipulator in the transmission cavity, guarantee that transmission cavity can not become the bottleneck of semiconductor device fabrication process.
The method of adjusting substrate temperature provided by the present invention can be applied in multiple occasion temperature required under the prerequisite not using cooling chamber, the temperature of substrate is adjusted to fast, steadily, accurately, has applicability widely.
Above-mentioned by the explanation of embodiment, should be able to make professional and technical personnel in the field understand better the present invention, and can reproduce and use the present invention.Those skilled in the art can be in the situation that do not break away from that the spirit and scope of the invention are done various changes to above-described embodiment and modification is apparent according to described principle herein.Therefore, the present invention should not be understood to be limited to above-described embodiment shown in this article, and its protection range should be defined by appending claims.
Claims (16)
1. a method of making semiconductor device in the vacuum treatment integrated system, it is characterized in that, described integrated system comprise at the first temperature to substrate carry out the first treatment chamber of the first processing, for substrate being carried out the second treatment chamber of the second processing at the second temperature, described method comprises:
Substrate is placed in to described the first treatment chamber, described substrate is carried out to described first and process;
To be placed in described the second treatment chamber through the described first substrate of processing, and in described the second treatment chamber, pass into heat transfer gas, the pressure of controlling described the second treatment chamber reaches preset pressure;
Make the pressure of described the second treatment chamber remain on a period of time in described preset pressure, then described substrate is carried out to described second and process.
2. method according to claim 1, is characterized in that, described heat transfer gas at least comprises a kind of in hydrogen, nitrogen, argon gas, helium.
3. method according to claim 1, is characterized in that, described heat transfer gas is at least carries out described second part of processing desired gas to substrate.
4. method according to claim 3, is characterized in that, described heat transfer gas is processed desired gas for substrate being carried out to described second, and described preset pressure is with in described the second treatment chamber, substrate to be carried out to the required pressure of described the second processing identical.
5. method according to claim 1, it is characterized in that, described integrated system also comprises transmission cavity, described the first treatment chamber, the second treatment chamber connect described transmission cavity, and described substrate is sent to described the second treatment chamber by described transmission cavity after processing through described first in the first treatment chamber.
6. method according to claim 1, it is characterized in that, described vacuum treatment integrated system is the PECVD integrated system, and described the first treatment chamber is for deposition of amorphous silicon films at described the first temperature, and described the second treatment chamber for depositing microcrystalline silicon film at described the second temperature.
7. method according to claim 6, is characterized in that, described substrate is glass substrate.
8. according to the described method of claim 6 or 7, it is characterized in that, described heat transfer gas is hydrogen.
9. method according to claim 8, is characterized in that, described preset pressure is 2mbar ~ 6mbar.
10. method according to claim 8, is characterized in that, described preset pressure is 4mbar ~ 6mbar.
11. method according to claim 8, is characterized in that, the flow of described heat transfer gas is 40slm ~ 140slm.
12. a method of regulating substrate temperature, is characterized in that, comprising:
The substrate that will have the first temperature is placed in the treatment chamber with second temperature, in described treatment chamber, passes into heat transfer gas, and the pressure of controlling described treatment chamber reaches preset pressure;
Make the pressure of described treatment chamber remain on a period of time in described preset pressure.
13. method according to claim 12, is characterized in that, described heat transfer gas at least comprises a kind of in hydrogen, nitrogen, argon gas, helium.
14. according to the described method of claim 12 or 13, it is characterized in that, described substrate is glass substrate.
15. according to the described method of claim 12 or 13, it is characterized in that, described treatment chamber is the vacuum treatment chamber.
16. method according to claim 15, is characterized in that, described treatment chamber is the PECVD chamber.
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