CN105633175A - Technology capable of lowering reject ratio of appearance of anti-PID battery - Google Patents
Technology capable of lowering reject ratio of appearance of anti-PID battery Download PDFInfo
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- 238000000034 method Methods 0.000 claims abstract description 42
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 32
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 30
- 239000010703 silicon Substances 0.000 claims abstract description 30
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 23
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 22
- 239000010439 graphite Substances 0.000 claims abstract description 22
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 18
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 18
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 15
- 230000007547 defect Effects 0.000 claims abstract description 15
- 230000003647 oxidation Effects 0.000 claims abstract description 15
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000000151 deposition Methods 0.000 claims abstract description 11
- 238000007740 vapor deposition Methods 0.000 claims abstract description 11
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 9
- 229910000077 silane Inorganic materials 0.000 claims abstract description 9
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 7
- 238000002360 preparation method Methods 0.000 claims abstract description 7
- 239000000203 mixture Substances 0.000 claims abstract description 5
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims abstract description 4
- 230000005284 excitation Effects 0.000 claims abstract description 3
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 230000000694 effects Effects 0.000 abstract description 4
- 230000008021 deposition Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 35
- 210000004027 cell Anatomy 0.000 description 12
- 238000005137 deposition process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
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Abstract
本发明公开了一种可以降低抗PID电池外观不良率的工艺，主要用于降低臭氧氧化法制备抗PID电池片导致的外观不良，包括将制绒扩散和刻蚀后的硅片采用臭氧氧化法生长一层二氧化硅薄膜；将其置于沉积氮化硅薄膜的石墨舟中；将石墨舟置于等离子气相沉积炉管中，抽真空至10Pa,加热至350-450oC；向管内充入氮气或氨气或者两者的混合气，保持气压为230Pa,开启激发源，对硅片表面的氧化膜进行预清洗一段时间；重新抽真空，通入氨气和硅烷,进行氮化硅薄膜的沉积；将沉积氮化硅薄膜后的硅片从石墨舟中取出，本发明有效降低臭氧氧化法制备抗PID电池片导致的外观不良，而且也不会影响电池片的抗衰减效应。The invention discloses a process capable of reducing the appearance defect rate of an anti-PID battery, which is mainly used to reduce the appearance defect caused by the preparation of an anti-PID battery sheet by an ozone oxidation method, including the use of an ozone oxidation method for the silicon wafer after the texturing is diffused and etched Grow a layer of silicon dioxide film; place it in a graphite boat for depositing a silicon nitride film; place the graphite boat in a plasma vapor deposition furnace tube, evacuate to 10Pa, heat to 350-450 o C; fill the tube with Inject nitrogen or ammonia gas or a mixture of the two, keep the air pressure at 230Pa, turn on the excitation source, and pre-clean the oxide film on the surface of the silicon wafer for a period of time; re-evacuate, feed ammonia and silane, and perform silicon nitride film The deposition of the silicon nitride film is taken out from the graphite boat after the silicon nitride film is deposited, and the invention effectively reduces the poor appearance caused by the preparation of the anti-PID cell by the ozone oxidation method, and does not affect the anti-attenuation effect of the cell.
Description
技术领域：Technical field:
本发明涉及太阳能电池领域，尤其是涉及一种可以降低抗PID电池外观不良率的工艺。The invention relates to the field of solar cells, in particular to a process capable of reducing the appearance defect rate of anti-PID cells.
背景技术：Background technique:
电势诱导衰减（PID）现象最早是Sunpower在2005年发现的，太阳能电池组件长期在高电压作用下使得玻璃，封装材料之间存在漏电流，大量电荷聚集在电池片表面，使得电池表面的钝化效果恶化，导致开路电压，短路电流和填充因子降低，使组件性能低于设计标准。The phenomenon of potential-induced decay (PID) was first discovered by Sunpower in 2005. The long-term high voltage of solar cell components causes leakage current between glass and packaging materials, and a large amount of charge accumulates on the surface of the cell, which makes the cell surface passivation. The effect deteriorates, resulting in a decrease in open circuit voltage, short circuit current and fill factor, making the performance of the component lower than the design standard.
而阻止此现象发生的方法有提高氮化硅薄膜的折射率，或者采用热生长法，或者等离子体气相沉积的方法在氮化硅和硅基体之间生长一层二氧化硅薄膜，但是由于提高氮化硅折射率会导致电池效率的降低，热生长法和等离子气相沉积法分别对硅片和石墨舟有损伤，虽然最近出现的采用臭氧氧化的方法很好的解决了上述方法存在的不足，并且成本低廉，但是由于该工艺之后采用等离子体辅助法沉积氮化硅工艺会导致有表面雾斑的外观不良发生，发生率在5%-50%之间，进而影响产品质量。The method to prevent this phenomenon is to increase the refractive index of the silicon nitride film, or to grow a silicon dioxide film between the silicon nitride and the silicon substrate by thermal growth or plasma vapor deposition. The refractive index of silicon nitride will lead to a decrease in cell efficiency. The thermal growth method and the plasma vapor deposition method will damage the silicon wafer and the graphite boat respectively. Although the recent method of using ozone oxidation has solved the shortcomings of the above methods, And the cost is low, but because the plasma-assisted silicon nitride deposition process is used after the process, the appearance of surface fog spots will occur, and the occurrence rate is between 5% and 50%, which will affect the product quality.
发明内容：Invention content:
本发明要解决的技术问题是提供一种在不影响电池片抗PID性能的情况下，最大限度的降低甚至消除由臭氧氧化法制备抗PID电池片导致的外观不良的氮化硅沉积工艺。The technical problem to be solved by the present invention is to provide a silicon nitride deposition process that minimizes or even eliminates the poor appearance caused by the preparation of anti-PID cells by the ozone oxidation method without affecting the anti-PID performance of the cells.
为解决上述问题，本发明是通过以下技术方案实现的：In order to solve the above problems, the present invention is achieved through the following technical solutions:
一种可以降低抗PID电池外观不良率的工艺，主要用于降低臭氧氧化法制备抗PID电池片导致的外观不良，属于等离子体气相沉积氮化硅减反射膜工艺，主要包括以下步骤：A process that can reduce the appearance defect rate of anti-PID cells, mainly used to reduce the appearance defects caused by the preparation of anti-PID cells by the ozone oxidation method, belongs to the plasma vapor deposition silicon nitride anti-reflection film process, mainly including the following steps:
（a）、将制绒扩散和刻蚀后的硅片采用臭氧氧化法生长一层二氧化硅薄膜；(a) A layer of silicon dioxide film is grown on the silicon wafer after texturing, diffusion and etching by the ozone oxidation method;
（b）、将生长了二氧化硅薄膜后的硅片置于沉积氮化硅薄膜的石墨舟中；(b), placing the silicon wafer grown with a silicon dioxide film in a graphite boat for depositing a silicon nitride film;
（c）、将石墨舟置于等离子气相沉积炉管中，抽真空至10Pa,加热至350-450oC；(c) Place the graphite boat in the plasma vapor deposition furnace tube, evacuate to 10Pa, and heat to 350-450 o C;
(d)、向管内充入氮气或氨气或者两者的混合气，保持气压为230Pa,开启激发源，产生等离子体，对硅片表面的氧化膜进行预清洗一段时间；(d), filling the tube with nitrogen or ammonia or a mixture of the two, keeping the air pressure at 230Pa, turning on the excitation source, generating plasma, and pre-cleaning the oxide film on the surface of the silicon wafer for a period of time;
(e)、重新对炉管抽真空，通入流量比为8:1-4:1氨气和硅烷，进行氮化硅薄膜的沉积；(e), the furnace tube is evacuated again, and the flow ratio of feeding in is 8:1-4:1 ammonia and silane, and the deposition of silicon nitride film is carried out;
(f)、将沉积氮化硅薄膜后的硅片从石墨舟中取出。(f), taking out the silicon wafer after depositing the silicon nitride film from the graphite boat.
优选地，所述步骤(d)中的氮气或氨气或者两者的混合气体的流量为1-5slm。Preferably, the flow rate of nitrogen or ammonia or the mixture of the two in the step (d) is 1-5 slm.
优选地，所述步骤(d)中预清洗的功率为50W-6000W，预清洗时间为5s-30s。Preferably, the pre-cleaning power in the step (d) is 50W-6000W, and the pre-cleaning time is 5s-30s.
优选地，所述步骤(e)中所沉积的氮化硅薄膜的厚度为78-85nm，折射率为2.06-2.10。Preferably, the silicon nitride thin film deposited in the step (e) has a thickness of 78-85 nm and a refractive index of 2.06-2.10.
与现有技术相比，本发明的有益之处在于：这种可以降低抗PID电池外观不良率的工艺采用氮气或氨气以及硅烷在一定工艺条件下进行硅片上的氮化硅薄膜的沉积，因而有效降低臭氧氧化法制备抗PID电池片导致的外观不良，而且也不会影响电池片的抗衰减效应。Compared with the prior art, the present invention is beneficial in that: this process that can reduce the appearance defect rate of the anti-PID battery uses nitrogen or ammonia gas and silane to deposit the silicon nitride film on the silicon wafer under certain process conditions , thus effectively reducing the poor appearance caused by the preparation of anti-PID cells by the ozone oxidation method, and will not affect the anti-attenuation effect of the cells.
具体实施方式：detailed description:
下面结合具体实施方式对本发明进行详细描述：The present invention is described in detail below in conjunction with specific embodiment:
实施例1：Example 1:
一种可以降低抗PID电池外观不良率的工艺，具体实施步骤为：将制绒、扩散、刻蚀后的硅片通过臭氧氧化法生长一层二氧化硅薄膜，将生长了二氧化硅薄膜后的硅片置于石墨舟中，将石墨舟置于等离子气相沉积设备炉管中，抽真空至10Pa,加热至450oC，然后向炉管内充入氮气，流量为5slm，调整射频功率为3000W，对硅片表面的氧化膜进行10s预清洗，然后重新抽真空，通入流量比为8:1-4：1的氨气和硅烷,进行氮化硅薄膜的沉积,沉积的氮化硅厚度为80nm,折射率为2.08，将沉积氮化硅薄膜后的硅片从石墨舟中取出，工艺完毕。A process that can reduce the appearance defect rate of the anti-PID battery. The specific implementation steps are: grow a silicon dioxide film on the silicon wafer after texturing, diffusion and etching by the ozone oxidation method, and grow the silicon dioxide film after growing the silicon dioxide film. Place the silicon wafer in the graphite boat, place the graphite boat in the furnace tube of the plasma vapor deposition equipment, evacuate to 10Pa, heat to 450 o C, then fill the furnace tube with nitrogen, the flow rate is 5slm, and the radio frequency power is adjusted to 3000W , pre-clean the oxide film on the surface of the silicon wafer for 10s, then re-evacuate, and feed ammonia gas and silane with a flow ratio of 8:1-4:1 to deposit silicon nitride film. The thickness of deposited silicon nitride is The thickness is 80nm, and the refractive index is 2.08. The silicon wafer after depositing the silicon nitride film is taken out from the graphite boat, and the process is completed.
实施例2：Example 2:
一种可以降低抗PID电池外观不良率的工艺，具体实施步骤为：将制绒、扩散、刻蚀后的硅片通过臭氧氧化法生长一层二氧化硅薄膜，将生长了二氧化硅薄膜后的硅片置于石墨舟中，然后将石墨舟置于等离子气相沉积设备炉管中，抽真空至10Pa,加热至450oC，然后向炉管内充入氨气，流量为3slm，调整射频功率为2000W，对硅片表面的氧化膜进行5s预清洗，重新抽真空，通入流量比为8:1-4：1的氨气和硅烷,进行氮化硅薄膜的沉积，沉积的氮化硅厚度为80nm,折射率为2.08，将沉积氮化硅薄膜后的硅片从石墨舟中取出，工艺完毕。A process that can reduce the appearance defect rate of the anti-PID battery. The specific implementation steps are: grow a silicon dioxide film on the silicon wafer after texturing, diffusion and etching by the ozone oxidation method, and grow the silicon dioxide film after growing the silicon dioxide film. Place the silicon wafer in the graphite boat, then place the graphite boat in the furnace tube of the plasma vapor deposition equipment, evacuate to 10Pa, heat to 450 o C, then fill the furnace tube with ammonia gas, the flow rate is 3slm, adjust the radio frequency power For 2000W, pre-clean the oxide film on the surface of the silicon wafer for 5s, re-evacuate, and feed ammonia and silane with a flow ratio of 8:1-4:1 to deposit silicon nitride film. The thickness is 80nm, and the refractive index is 2.08. The silicon wafer after depositing the silicon nitride film is taken out from the graphite boat, and the process is completed.
实施例3：Example 3:
一种可以降低抗PID电池外观不良率的工艺，具体实施步骤为：将制绒、扩散、刻蚀后的硅片通过臭氧氧化法生长一层二氧化硅薄膜，将生长了二氧化硅薄膜后的硅片置于石墨舟中，然后将石墨舟置于等离子气相沉积设备炉管中，抽真空至10Pa,加热至450oC，然后向炉管内充入氨气，流量为4slm，调整射频功率为2000W，对硅片表面的氧化膜进行7s预清洗，重新抽真空，通入流量比为8:1-4：1的氨气和硅烷，进行氮化硅薄膜的沉积，沉积的氮化硅厚度为82nm，折射率为2.09，将沉积氮化硅薄膜后的硅片从石墨舟中取出，工艺完毕。A process that can reduce the appearance defect rate of the anti-PID battery. The specific implementation steps are: grow a silicon dioxide film on the silicon wafer after texturing, diffusion and etching by the ozone oxidation method, and grow the silicon dioxide film after growing the silicon dioxide film. Place the silicon wafer in the graphite boat, then place the graphite boat in the furnace tube of the plasma vapor deposition equipment, evacuate to 10Pa, heat to 450 o C, then fill the furnace tube with ammonia gas, the flow rate is 4slm, adjust the radio frequency power 2000W, pre-clean the oxide film on the surface of the silicon wafer for 7s, re-evacuate, feed ammonia and silane with a flow ratio of 8:1-4:1, and deposit silicon nitride film. The deposited silicon nitride The thickness is 82nm, and the refractive index is 2.09. The silicon wafer after depositing the silicon nitride film is taken out from the graphite boat, and the process is completed.
实施例4：Example 4:
一种可以降低抗PID电池外观不良率的工艺，具体实施步骤为：将制绒、扩散、刻蚀后的硅片通过臭氧氧化法生长一层二氧化硅薄膜，将生长了二氧化硅薄膜后的硅片置于石墨舟中，然后将石墨舟置于等离子气相沉积设备炉管中，抽真空至10Pa，加热至450oC，然后向炉管内充入氮气，流量为5slm，调整射频功率为3000W，对硅片表面的氧化膜进行7s预清洗，重新抽真空，通入流量比为8:1-4：1的氨气和硅烷，进行氮化硅薄膜的沉积，沉积的氮化硅厚度为80nm，折射率为2.07，将沉积氮化硅薄膜后的硅片从石墨舟中取出，工艺完毕。A process that can reduce the appearance defect rate of the anti-PID battery. The specific implementation steps are: grow a silicon dioxide film on the silicon wafer after texturing, diffusion and etching by the ozone oxidation method, and grow the silicon dioxide film after growing the silicon dioxide film. Place the silicon wafer in the graphite boat, then place the graphite boat in the furnace tube of the plasma vapor deposition equipment, evacuate to 10Pa, heat to 450 o C, then fill the furnace tube with nitrogen, the flow rate is 5slm, adjust the radio frequency power to 3000W, pre-clean the oxide film on the surface of the silicon wafer for 7s, re-evacuate, feed ammonia gas and silane with a flow ratio of 8:1-4:1, and deposit silicon nitride film, the thickness of deposited silicon nitride The thickness is 80nm, and the refractive index is 2.07. The silicon wafer after depositing the silicon nitride film is taken out from the graphite boat, and the process is completed.
上述可以降低抗PID电池外观不良率的工艺采用氮气或氨气以及硅烷在一定工艺条件下进行硅片上的氮化硅薄膜的沉积，因而有效降低臭氧氧化法制备抗PID电池片导致的外观不良，而且也不会影响电池片的抗衰减效应。The above-mentioned process that can reduce the appearance defect rate of the anti-PID battery uses nitrogen or ammonia gas and silane to deposit the silicon nitride film on the silicon wafer under certain process conditions, thus effectively reducing the appearance defect caused by the preparation of the anti-PID battery sheet by the ozone oxidation method , and it will not affect the anti-attenuation effect of the cell.
需要强调的是：以上仅是本发明的较佳实施例而已，并非对本发明作任何形式上的限制，凡是依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化与修饰，均仍属于本发明技术方案的范围内。It should be emphasized that: the above are only preferred embodiments of the present invention, and are not intended to limit the present invention in any form. Any simple modifications, equivalent changes and modifications made to the above embodiments according to the technical essence of the present invention are valid. Still belong to the scope of the technical solution of the present invention.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106299023A (en) * | 2016-08-26 | 2017-01-04 | 奥特斯维能源（太仓）有限公司 | A kind of anti-PID solaode is done over again the processing method of sheet |
| CN106898676A (en) * | 2017-02-06 | 2017-06-27 | 苏州润阳光伏科技有限公司 | A kind of method for repairing Interface composites state |
| CN108987490A (en) * | 2018-07-18 | 2018-12-11 | 国家电投集团西安太阳能电力有限公司 | Surface cleaning treatment method for solar cell after wet etching oxidation |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106299023A (en) * | 2016-08-26 | 2017-01-04 | 奥特斯维能源（太仓）有限公司 | A kind of anti-PID solaode is done over again the processing method of sheet |
| CN106299023B (en) * | 2016-08-26 | 2017-12-22 | 奥特斯维能源（太仓）有限公司 | A kind of anti-PID solar cells are done over again the processing method of piece |
| CN106898676A (en) * | 2017-02-06 | 2017-06-27 | 苏州润阳光伏科技有限公司 | A kind of method for repairing Interface composites state |
| CN106898676B (en) * | 2017-02-06 | 2018-11-27 | 苏州润阳光伏科技有限公司 | A kind of method for repairing silicon nitride interface compound state |
| CN108987490A (en) * | 2018-07-18 | 2018-12-11 | 国家电投集团西安太阳能电力有限公司 | Surface cleaning treatment method for solar cell after wet etching oxidation |
| CN108987490B (en) * | 2018-07-18 | 2020-04-14 | 国家电投集团西安太阳能电力有限公司 | Treatment method for surface layer cleaning after solar cell wet etching and oxidation |
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