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CN103208568A - 氮化物发光二极管及制作方法 - Google Patents

氮化物发光二极管及制作方法 Download PDF

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CN103208568A
CN103208568A CN201310108094XA CN201310108094A CN103208568A CN 103208568 A CN103208568 A CN 103208568A CN 201310108094X A CN201310108094X A CN 201310108094XA CN 201310108094 A CN201310108094 A CN 201310108094A CN 103208568 A CN103208568 A CN 103208568A
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vitellarium
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林文禹
叶孟欣
钟志白
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Xiamen Sanan Optoelectronics Technology Co Ltd
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Xiamen Sanan Optoelectronics Technology Co Ltd
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Priority to CN201310108094XA priority Critical patent/CN103208568A/zh
Publication of CN103208568A publication Critical patent/CN103208568A/zh
Priority to PCT/CN2014/070989 priority patent/WO2014161378A1/zh
Priority to US14/742,150 priority patent/US9570654B2/en
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Abstract

本发明公开了一种氮化物发光二极管，其包括：衬底，表面具有次微米图案，定义为生长区和非生长区；生长阻隔层，形成于所述衬底的非生长区，用于阻挡衬底非生长区的外延生长；发光外延层，形成于所述衬底的生长区并通过横向外延向所述非生长区延伸，覆盖所述生长阻隔层，包括n型层、发光层和p型层；其中，所述生长阻隔层的折射率小于发光外延层的折射率，且顺着所述衬底的次微米图案形成高低起伏之形貌，从而在增加发光二极管的取光界面的同时，提供发光外延层与取光界面的折射系数差异，提高取光效率。

Description

氮化物发光二极管及制作方法
技术领域
本发明涉及氮化物发光二极管及其制作方法，具体为一种具有低折射系数镀膜次微米图形化衬底 (lower refractive index coatings on sub-micro patterned substrate)之发光二极管之外延结构设计。 
背景技术
氮化物发光二极管目前已经广泛应用于显示、指示、背光源和照明等领域，随着其发光效率的不断提升，有望在未来几年内取代白炽灯和荧光灯，成为通用照明的主要光源。 
发明内容
本发明之目的在提供一新颖之外延衬底，并于其上进行外延结构设计，从而提升光萃取率与内部量子效率，最终提升发光二极管之光输出功率。 
根据本发明的第一个方面，氮化物发光二极管，其包括：衬底，表面具有次微米图案，定义为生长区和非生长区；生长阻隔层，形成于所述衬底的非生长区，用于阻挡衬底非生长区的外延生长；发光外延层，形成于所述衬底的生长区并通过横向外延向所述非生长区延伸，覆盖所述生长阻隔层，包括n型层、发光层和p型层；其中，所述生长阻隔层的折射率小于发光外延层的折射率，且顺着所述衬底的次微米图案形成高低起伏之形貌，从而在增加发光二极管的取光界面的同时，提供发光外延层与取光界面的折射系数差异，提高取光效率。 
优选地，所述生长阻隔层的起伏面与水平面的夹角α为40~70°，较佳的取60°。 
优选地，所述生长阻隔层的顶端与底部距离h为200nm~900nm。 
优选地，所述生长阻隔层为一系列离散的生长阻隔材料模块，其可呈块状或带状分布。在一些实施例中，所述离散的生长阻隔材料模块呈周期性分布，其间隙可为100nm~5000nm。 
在前述结构中，所述生长阻隔层的材料可选用氧化物镀膜或氮化物镀膜。在一些实施例中，所述生长阻隔层的折射系数X满足：衬底<X<发光外延层。如：生长衬底选用蓝宝石（Al2O3）、生长阻隔层选用氮化硅（Si3N4），那么氮化镓的折射率n≈2.5，蓝宝石折射率n≈1.8，氮化硅的折射率n≈2.0。在一些实施例中，所述生长阻隔层的折射系数X满足：X <衬底 <发光外延层。如：生长衬底选用蓝宝石（Al2O3）、生长阻隔层选用二氧化硅（SiO2），那么氮化镓的折射率n≈2.5，蓝宝石折射率n≈1.8，二氧化硅的折射率n≈1.48。 
在一些实施例中，通过控制生长衬底的图形尺寸及生长阻隔层的厚度，从而在所述生长阻隔层与外延层之间形成间隙，从而增加取光界面的折射率差。 
根据本发明的第二个方面，氮化物发光二极管的制作方法，包括步骤：提供表面具有次微米图案的生长衬底，将其表面定义为生长区和非生长区；在所述衬底的非生长区形成生长阻隔层，用于阻挡衬底非生长区的外延生长；在所述衬底的生长区生长发光外延层，并通过横向外延向所述非生长区延伸，覆盖所述生长阻隔层，包括n型层、发光层和p型层；其中，所述生长阻隔层的折射率小于发光外延层的折射率，且顺着所述衬底的次微米图案形成高低起伏之形貌，如此在增加发光二极管的取光界面的同时，提供发光外延层与取光界面的折射系数差异，提高取光效率。藉由这样的衬底设计，不仅在非生长区有强大的光反射功效，在生长区也可由蓝宝石次微米图形衬底来提供反射，可谓提供一全面的复合式光反射衬底。 
在一些实施例中，首先在所述生长衬底的表面制作次微米凹凸图案；接着定义生长区和非生长区；然后在所述衬底表面上成生长阻隔层，其顺着所述衬底的次微米图案形成高低起伏之形貌；再然后去除生长区的生长阻隔层露出生长衬底表面，最后在露出的生长衬底表面上进行外延生长发光外延层，通过横向外延向所述非生长区延伸覆盖所述生长阻隔层。 
在一些实施例中，可以通过控制生长衬底的图形尺寸及生长阻隔层的厚度，从而在所述生长阻隔层与外延层之间形成间隙。 
根据本发明的第三个方面，一种照明系统或显示系统，包括一系列发光二极管，每个发光二极管包括：衬底，表面具有次微米图案，定义为生长区和非生长区；生长阻隔层，形成于所述衬底的非生长区，用于阻挡衬底非生长区的外延生长；发光外延层，形成于所述衬底的生长区并通过横向外延向所述非生长区延伸，覆盖所述生长阻隔层，包括n型层、发光层和p型层；其中，所述生长阻隔层的折射率小于发光外延层的折射率，且顺着所述衬底的次微米图案形成高低起伏之形貌，从而在增加发光二极管的取光界面的同时，提供发光外延层与取光界面的折射系数差异，提高取光效率。 
本发明的其它特征和优点将在随后的说明书中阐述，并且，部分地从说明书中变得显而易见，或者通过实施本发明而了解。本发明的目的和其它优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。 
附图说明
附图用来提供对本发明的进一步理解，并且构成说明书的一部分，与本发明的实施例一起用于解释本发明，并不构成对本发明的限制。此外，附图数据是描述概要，不是按比例绘制。 
图1为根据本发明实施之制作外延生长衬底的过程示意图，其中（a）为具有次微米图案的衬底的剖视图，（b）为在（a）所示衬底的表面上镀上一层生长阻隔层后的剖视图，（c）为去除生长区的生长阻隔层露出衬底的表面后的剖视图。 
图2和图3简单显示了生长阻隔层的分布方式，其中图2为块状分布，图3为带状分布。 
图4为图1中（c）的局部A的放大图。 
图5为图1中(C)对应的实际电子显微镜 (SEM)拍摄图。 
图6为在图1（c）所示的衬底上进行外延生长后剖视图。 
图7为图6对应的实际电子显微镜 (SEM)拍摄图。 
图8为根据本发明实施的一种氮化物发光二极管的剖视图。 
具体实施方式
在氮化镓发光二极管中，提升外部量子效率 (External Quantum Efficiency，EQE) 通常可从提升光萃取率 (Light Extraction Efficiency，LEE) 与内部量子效率 (Internal Quantum Efficiency, IQE) 着手。图形化蓝宝石衬底的开发可以用来增加光萃取率，同时降低缺陷密度。一方面藉由氮化镓 (n=2.5) 与蓝宝石 (n=1.8) 之折射系数差异 (Δn) ，将造成往蓝宝石衬底发射之光改变路径乃至射出发光二极管外；另一方面，图形化蓝宝石衬底之几何图案造成外延横向成长从而使位错转向 (Dislocation Bending) ，避免其贯穿至表面。 
下面各实施例在前述图形化蓝宝石衬底的基础上，提出一种新的外延生长方式，其首先在生长衬底的表面上制作次微米图案，接着在生长衬底的部分区域（即非生长区）上镀上一层氧化层作为生长阻隔层，其顺着所述衬底的次微米图案形成高低起伏之形貌；然后在生长衬底的另一区域（即为生长区）上进行外延生长外延层，并通过横向外延向所述非生长区延伸，覆盖所述生长阻隔层，在增加发光二极管的取光界面的同时，提供发光外延层与取光界面的折射系数差异，提高取光效率。 
为使本发明之一种氮化物发光二极管及其制作方法更易于理解其实质性特点及其所具的实用性，下面便结合附图对本发明若干具体实施例作进一步的详细说明。但以下关于实施例的描述及说明对本发明保护范围不构成任何限制。 
实施例1 
本实施例公开一种具有低折射系数镀膜次微米图形化衬底 (lower refractive index coatings on sub-micro patterned substrate)之发光二极管之外延结构设计，具体的说是在表面具有次微米案图的衬底沉积氧化物层，藉由衬底原本就具有织构化 (textured) 的表面，使得沉积于其上的氧化物层顺着此织构化的表面形成高低起伏之氧化物镀膜，随后将此具高低起伏形貌之氧化物镀膜进行黄光微影 (photolithography)、蚀刻 (etching) 工艺予以图形化 (patterning)， 如此氮化物材料即可在露出之次微米图案化衬底上，进行外延至完成整个发光二级管结构。
附图1显示了制作外延生长衬底的过程。首先提供次微米图形化蓝宝石衬底001，其表面上具有一系列周期分布的凸起图案，每个凸起图案的直径D为800nm，高度为500nm，图案的间隙S为300nm，其剖视图如图（a）所示。接着在衬底001上镀一层二氧化硅膜002，二氧化硅膜将顺着原本之次微米图形化衬底形成高低起伏的形貌，厚度取400~500nm，其剖视图如图（b）所示。然后将此二氧化硅膜002图案化至露出部分蓝宝石衬底001以提供外延成长之区域，其剖视图如图（c）所示，其中镀有二氧化硅膜的区域为非生长区001A，其可以露出蓝宝石衬底表面的区域为生长区001B。二氧化硅膜002作为生长阻隔层，用于阻挡衬底非生长区的外延生长。图5显示了处理后的衬底的实际电子显微镜 (SEM)拍摄图，其中上半部分为半生长区，其表面镀为二氧化硅膜002，下半部分为生长区001B。 
请参看图2和图3，二氧化硅膜002层为一系列离散的模块，各个模块可呈块状或带状分布，各个模块的间隙为100nm~5000nm。请参看图4，其为图1（c）的局部A的放大图，各个二氧化硅膜002由一系列起伏面构成002A，起伏面的顶部与底部的距离h为200nm~900nm，较佳取500nm。设定起伏面002A与水平面的夹角为α为40~70°，较佳的取60°。在发光二极管的取光界面中，这样的角度范围可得到最佳的光散射机率。 
请参看附图6，在经前述处理过的衬底的生长区001B上生长氮化物缓冲层101，并通过横向外延向非生长区001A延伸，覆盖二氧化硅膜002，合拢为一平整面，并在二氧化硅膜002与缓冲层101之间形成间隙301。缓冲层的材料可选用GaN，AlN或其它材料。图7为实际电子显微镜 (SEM)拍摄图。采用前述处理过的衬底进行外延生长，可使位错转向降低缺陷密度。 
请参看附图8，在缓冲层101上依次沉积N型传导层201、发光层202和P型传导层203，构成发光外延层200，并进行常规芯片工艺，制成LED芯片。N型传导层201的材料为n-GaN层，发光层202一般由In的氮化镓系化合物半导体所构成，较佳为多量子阱结构，具体可以由In x1 Ga 1-x1 N阱层(0＜x1＜1)和In x2 Ga 1-x2 N垒层(0≤x 2 ＜1，x 1 ＞x 2 )，以适当次数交替反复层叠形成。在发光层202和P型传导层之间还可设置一层电子阻挡层（图中未示出），其材料通常为氮化铝镓，厚度为10nm~60nm且具有足够高之势垒，用以局限从N型注入之电子防止其溢流到P型层。P型传导层203的材料为p-GaN层。 
在本实施例中，一方面藉由导入二氧化硅镀膜于次微米图形化衬底上，从而形成高低起伏之二氧化硅膜形貌，从而提供了与外延层更大的折射系数差和更多的界面去反射、萃取从有源区所射出之光线。另一方面相较于传统次微米图形化衬底，本实施例能够提供更多之横向成长，进而降低缺陷密度。 
实施例2 
区别于实施例1，本实施例1采用氮化硅作为生长阻隔层。在本实施例中，可藉由外延生长方式形成无间隙的外延层，由于氮化硅的折射系数为2.0左右，此刚好介于氮化镓与蓝宝石之间，如此满足渐变式折射率 ( Graded Refractive Index，GRIN) 关系，即藉由渐变式的折射系数减少光于界面的耗损，有利于光的多重导引，最终萃取出半导体中而增加光输出功率。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。 

Claims (10)

1.氮化物发光二极管，包括：
衬底，表面具有次微米图案，定义为生长区和非生长区；
生长阻隔层，形成于所述衬底的非生长区，用于阻挡衬底非生长区的外延生长；
    发光外延层，形成于所述衬底的生长区并通过横向外延向所述非生长区延伸，覆盖所述生长阻隔层，包括n型层、发光层和p型层；
    其中，所述生长阻隔层的折射率小于发光外延层的折射率，且顺着所述衬底的次微米图案形成高低起伏之形貌，从而在增加发光二极管的取光界面的同时，提供发光外延层与取光界面的折射系数差异。
2.根据权利要求1所述的氮化物发光二极管，其特征在于：所述生长阻隔层与发光外延层之间具有间隙。
3.根据权利要求1所述的氮化物发光二极管，其特征在于：所述生长阻隔层的起伏面与水平面的夹角α为40~70°。
4.根据权利要求1所述的氮化物发光二极管，其特征在于：所述生长阻隔层的顶端与底部距离h为200nm~900nm。
5.根据权利要求1所述的氮化物发光二极管，其特征在于：所述生长阻隔层的折射系数X满足：
衬底<X<发光外延层，从而增加取光界面的折射系数差异。
6.根据权利要求1所述的氮化物发光二极管，其特征在于：所述生长阻隔层的折射系数X满足：
X<衬底<发光外延层，从而增加取光界面的折射系数差异。
7.根据权利要求1所述的氮化物发光二极管，其特征在于：所述生长阻隔层为一系列离散的生长阻隔材料模块，其可呈块状或带状分布。
8.根据权利要求1所述的氮化物发光二极管，其特征在于：所述生长阻隔层为氧化物镀膜或氮化物镀膜。
9.氮化物发光二极管的制作方法，包括步骤：
提供表面具有次微米图案的生长衬底，将其表面定义为生长区和非生长区；
在所述衬底的非生长区形成生长阻隔层，用于阻挡衬底非生长区的外延生长；
在所述衬底的生长区生长发光外延层，并通过横向外延向所述非生长区延伸，覆盖所述生长阻隔层，包括n型层、发光层和p型层；
其中，所述生长阻隔层的折射率小于发光外延层的折射率，且顺着所述衬底的次微米图案形成高低起伏之形貌，从而在增加发光二极管的取光界面的同时，提供发光外延层与取光界面的折射系数差异，提高取光效率。
10.一种照明系统或显示系统，包括一系列发光二极管，每个发光二极管包括：
衬底，表面具有次微米图案，定义为生长区和非生长区；
生长阻隔层，形成于所述衬底的非生长区，用于阻挡衬底非生长区的外延生长；
    发光外延层，形成于所述衬底的生长区并通过横向外延向所述非生长区延伸，覆盖所述生长阻隔层，包括n型层、发光层和p型层；
    其中，所述生长阻隔层的折射率小于发光外延层的折射率，且顺着所述衬底的次微米图案形成高低起伏之形貌，如此在增加发光二极管的取光界面的同时，提供发光外延层与取光界面的折射系数差异，提高取光效率。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014161378A1 (zh) * 2013-04-01 2014-10-09 厦门市三安光电科技有限公司 氮化物发光二极管及制作方法
CN108054259A (zh) * 2017-12-13 2018-05-18 苏州吉赛电子科技有限公司 一种led芯片及其制作方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013108876B4 (de) * 2013-08-16 2022-08-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Fotolithografisches Verfahren zur Herstellung einer Struktur in einem Strahlung emittierenden Halbleiterbauelement
JP2019040898A (ja) * 2017-08-22 2019-03-14 株式会社小糸製作所 半導体成長用基板、半導体素子、半導体発光素子および半導体素子製造方法
CN109103307A (zh) * 2018-08-17 2018-12-28 开发晶照明（厦门）有限公司 发光元件及其制造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101197410A (zh) * 2006-12-04 2008-06-11 三垦电气株式会社 半导体发光器件及其制造方法
US20090272993A1 (en) * 2008-05-02 2009-11-05 Cheong Hung Seob Semiconductor light emitting device
US20100015739A1 (en) * 2005-06-25 2010-01-21 Epiplus Co., Ltd. Semiconductor light emitting device having improved luminance and manufacturing method thereof
CN101826582A (zh) * 2009-03-02 2010-09-08 Lg伊诺特有限公司 半导体发光器件
KR20110006161A (ko) * 2009-07-13 2011-01-20 한국광기술원 이중요철구조의 기판을 갖는 반도체 발광소자 및 그 제조방법
CN102169936A (zh) * 2011-02-16 2011-08-31 亚威朗光电(中国)有限公司 图形衬底和led芯片
CN102368526A (zh) * 2011-10-27 2012-03-07 华灿光电股份有限公司 一种近紫外led器件的制造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1104031B1 (en) * 1999-11-15 2012-04-11 Panasonic Corporation Nitride semiconductor laser diode and method of fabricating the same
CN1992359B (zh) * 2005-09-22 2012-12-12 索尼株式会社 发光二极管及其制造方法
TWI319893B (en) * 2006-08-31 2010-01-21 Nitride semiconductor substrate, method for forming a nitride semiconductor layer and method for separating the nitride semiconductor layer from the substrate
KR101274651B1 (ko) * 2010-11-30 2013-06-12 엘지디스플레이 주식회사 발광 다이오드 및 이의 제조 방법
CN103208568A (zh) * 2013-04-01 2013-07-17 厦门市三安光电科技有限公司 氮化物发光二极管及制作方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100015739A1 (en) * 2005-06-25 2010-01-21 Epiplus Co., Ltd. Semiconductor light emitting device having improved luminance and manufacturing method thereof
CN101197410A (zh) * 2006-12-04 2008-06-11 三垦电气株式会社 半导体发光器件及其制造方法
US20090272993A1 (en) * 2008-05-02 2009-11-05 Cheong Hung Seob Semiconductor light emitting device
CN101826582A (zh) * 2009-03-02 2010-09-08 Lg伊诺特有限公司 半导体发光器件
KR20110006161A (ko) * 2009-07-13 2011-01-20 한국광기술원 이중요철구조의 기판을 갖는 반도체 발광소자 및 그 제조방법
CN102169936A (zh) * 2011-02-16 2011-08-31 亚威朗光电(中国)有限公司 图形衬底和led芯片
CN102368526A (zh) * 2011-10-27 2012-03-07 华灿光电股份有限公司 一种近紫外led器件的制造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014161378A1 (zh) * 2013-04-01 2014-10-09 厦门市三安光电科技有限公司 氮化物发光二极管及制作方法
CN108054259A (zh) * 2017-12-13 2018-05-18 苏州吉赛电子科技有限公司 一种led芯片及其制作方法

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Application publication date: 20130717