CN103123934B - The gallium nitride based transistor structure with high electron mobility of tool barrier layer and manufacture method - Google Patents
The gallium nitride based transistor structure with high electron mobility of tool barrier layer and manufacture method Download PDFInfo
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Abstract
A gallium nitride based transistor structure with high electron mobility for tool barrier layer, comprising: a substrate; One nucleating layer, this nucleating layer is produced on above substrate; One unintentionally adulterates resistive formation, and this resistive formation that unintentionally adulterates is produced on above nucleating layer; One unintentionally adulterates mobility channel layer, and this mobility channel layer that unintentionally adulterates is produced on above the resistive formation that unintentionally adulterates; One unintentionally doped aluminum nitride space layer, this unintentionally doped aluminum nitride space layer be produced on above the mobility channel layer that unintentionally adulterates; One unintentionally doping potential barrier layer, this unintentionally doping potential barrier layer be produced on unintentionally above doped aluminum nitride space layer; One unintentionally doped gallium nitride cap, this unintentionally doped gallium nitride cap be produced on unintentionally above doping potential barrier layer.The present invention can increase the restriction to raceway groove two-dimensional electron gas, improves the power output of institute's impurity profile, and the gate current of device is reduced simultaneously.
Description
Technical field
The invention belongs to technical field of semiconductors, refer to a kind of GaN base transistor with high electronic transfer rate (HEMT) structure and manufacture method of tool barrier layer especially, the novel barrier layer that this transistor uses unintentionally doping aluminum gallium nitride and aluminium nitride to combine and high mobility gallium nitride channel layer, two-dimensional electron gas surface density and the restriction to two-dimensional electron gas can be significantly improved, reduce heterojunction boundary to the impact of channel electrons performance, improve the performance of institute's impurity profile.
Background technology
Gallium nitride-based semiconductor material has excellent physics and chemistry characteristic, is particularly suitable for preparing high frequency, high-power High Electron Mobility Transistor.GaN base transistor with high electronic transfer rate puncture voltage is high, operating frequency is high, power output is large, radiation resistance is good, has broad application prospects in fields such as radio communication, radar, Aero-Space, automotive electronics, Automated condtrol, oil exploration, hyperthermia radiation environment.
The principle of High Electron Mobility Transistor is: because the energy gap forming the bi-material of heterojunction is different, potential barrier and potential well is defined at heterojunction boundary place, the free electron produced by polarity effect or modulation doping, be accumulated in the gallium nitride layer of undoped in the triangular quantum well at interface, form two-dimensional electron gas, because these electronics in potential well are separated with the ionized impurity space in potential barrier, greatly reduce Coulomb scattering, thus significantly improve the electron mobility of material.After being developed into device, by the two-dimensional electron gas density regulating gate electrode bias voltage can control heterojunction boundary place, under certain direct current (DC) bias, can amplify high-frequency microwave signal.
Two-dimensional electron gas surface density and mobility are the important parameters characterizing high electron mobility transistor structure quality of materials, while reduction potential barrier thickness, improving two-dimensional electron gas surface density and mobility in raceway groove is on the basis of improving GaN base transistor with high electronic transfer rate operating frequency, strengthens the Important Action of output current density and power density.Before the present invention, in order to improve two-dimensional electron gas surface density and the mobility of gallium nitride based transistor structure with high electron mobility material, usually take two kinds of methods: (1) carries out N-shaped doping to aluminum gallium nitride barrier layer, the two-dimensional electron gas surface density in raceway groove can be improved to a certain extent.But doping can reduce the integrality of material lattice, thus cause the crystal mass of gallium nitride layer to decline, the interface roughness between gallium nitride and gallium nitride layer increases, and reduces electron mobility; (2) adopt high Al contents barrier layer AlGaN/GaN HEMT-structure, along with barrier layer Al component raises, heterogeneous ligament rank and polarized electric field increase, and can significantly improve two-dimensional electron gas surface density.But when Al component is higher, large lattice mismatch can cause crystal mass, the surface and interface degradation of AlGaN potential barrier, and the deep energy level defect of Strain induced increases, and makes scattering strengthen, mobility reduces; Meanwhile, when Al component is too high, Macrolattice mismatch limits barrier layer thickness, is difficult to produce strong two-dimensional electron gas.
Summary of the invention
The object of the present invention is to provide a kind of gallium nitrate based HEMT-structure and manufacture method of tool barrier layer, compared with common GaN base transistor with high electronic transfer rate material, this transistor arrangement inserts aluminum nitride thin layer and forms novel barrier layer in aluminum gallium nitride barrier layer, there is higher two-dimensional electron gas surface density, the barrier height of raceway groove two-dimensional electron gas can be improved simultaneously, more effectively limit the leakage of channel electrons to barrier layer direction, increase the restriction to raceway groove two-dimensional electron gas thus, improve the power output of institute's impurity profile, the gate current of device is expected to be reduced simultaneously.
The invention provides a kind of gallium nitride based transistor structure with high electron mobility of tool barrier layer, comprising:
One substrate;
One nucleating layer, this nucleating layer is produced on above substrate;
One unintentionally adulterates resistive formation, and this resistive formation that unintentionally adulterates is produced on above nucleating layer;
One unintentionally adulterates mobility channel layer, and this mobility channel layer that unintentionally adulterates is produced on above the resistive formation that unintentionally adulterates;
One unintentionally doped aluminum nitride space layer, this unintentionally doped aluminum nitride space layer be produced on above the mobility channel layer that unintentionally adulterates;
One unintentionally doping potential barrier layer, this unintentionally doping potential barrier layer be produced on unintentionally above doped aluminum nitride space layer;
One unintentionally doped gallium nitride cap, this unintentionally doped gallium nitride cap be produced on unintentionally above doping potential barrier layer.
The present invention also provides a kind of manufacture method of GaN base transistor with high electronic transfer rate of tool barrier layer, comprises the steps:
Step 1: select a substrate;
Step 2: at Grown one deck nucleating layer, growth thickness is 0.01-0.50 μm;
Step 3: grow the resistive formation that unintentionally adulterates on nucleating layer;
Step 4: grow the mobility channel layer that unintentionally adulterates on the resistive formation that unintentionally adulterates;
Step 5: grow unintentionally doped aluminum nitride space layer unintentionally adulterating on mobility channel layer, growth thickness is 0.7-3nm;
Step 6: grow the novel barrier layer that unintentionally adulterates in unintentionally doped aluminum nitride space layer;
Step 7: grow unintentionally doped gallium nitride cap unintentionally adulterating on novel barrier layer, thickness is 1-5nm, completes preparation.
The present invention can reduce technology difficulty, reduce processing step, by the barrier layer construction introduced, namely in traditional aluminum gallium nitride barrier layer, aluminum nitride thin layer is inserted, low defect concentration and high two-dimensional electron gas surface density can be obtained, the barrier height of restriction channel electrons can be significantly improved simultaneously, be expected to the grid leak electricity reducing device.The present invention significantly can improve the performance of gallium nitrate based high temperature, high frequency, high-power component and circuit.
Accompanying drawing explanation
For further illustrating content of the present invention, below in conjunction with accompanying drawing, one detailed description is done to the present invention, wherein:
Fig. 1 is structural representation of the present invention;
Fig. 2 is Making programme figure of the present invention;
Fig. 3 (a) has gallium nitrate based HEMT-structure two-dimensional electron gas distribution and the structure energy band diagram that traditional barrier layer and (b) have novel barrier layer.
Embodiment
Refer to shown in Fig. 1, the gallium nitrate based HEMT-structure of a kind of tool of the present invention barrier layer, comprising:
One substrate 10, this substrate 10 is silicon carbide substrates or Sapphire Substrate or silicon substrate, and the thickness of this substrate 10 is 300-650 μm.
One nucleating layer 20, this nucleating layer 20 is produced on above substrate 10.Described nucleating layer 20 is gallium nitride or aluminium nitride or aluminum gallium nitride, and thickness is 0.01-0.50 μm, and preferred value is 0.03-0.30 μm.
One unintentionally adulterate resistive formation 30, this resistive formation 30 that unintentionally adulterates is produced on above nucleating layer 20, and resistivity is greater than 10
6Ω .cm.The described material unintentionally adulterating resistive formation 30 is Al
yga
1-yn, al composition is 0≤y≤0.15, and thickness is 1-5 μm.This effect of unintentionally adulterating resistive formation 30 has four, one is as the lattice mismatch between resilient coating reduction substrate and epitaxial loayer, improve the crystal mass of epitaxial loayer, two is reduce element leakage as resistive formation, three is raise the barrier height of raceway groove in resilient coating substrate side as back of the body barrier layer, reduces the resilient coating of channel electrons under High-Field and leaks, improve the stability of materials and devices, four is the puncture voltages improving device, improves the power output of device.
One unintentionally adulterates mobility channel layer 40, and this mobility channel layer 40 that unintentionally adulterates is produced on above the resistive formation 30 that unintentionally adulterates, and carrier mobility is greater than 500cm
2/ Vs.Described mobility channel layer 40 material that unintentionally adulterates is gallium nitride, and thickness is 10-100nm.This mobility channel layer 40 that unintentionally adulterates provides a good passage for two-dimensional electron gas, also significantly increases raceway groove two-dimensional electron gas mobility simultaneously.
One unintentionally doped aluminum nitride space layer 50, this unintentionally doped aluminum nitride space layer 50 be produced on above the high mobility gallium nitride channel layer 40 that unintentionally adulterates.The thickness of described unintentionally doped aluminum nitride space layer 50 is 0.7-3nm, and preferred value is 1nm.The effect of this unintentionally doped aluminum nitride space layer 50 has be utilize binary compound channel electrons and multi-element compounds unintentionally adulterated novel barrier layer 60 separate at three: one, reduces the alloy scattering of electronics, improves raceway groove two-dimensional electron gas mobility further; Two is the features utilizing its energy gap large, improves potential barrier, and effectively containment electronics is to the leakage of unintentionally adulterate novel barrier layer 60 and surface; Three is the polarizations utilizing aluminium nitride material strong, induces more electronics in channels, improves the surface density of two-dimensional electron gas.
One unintentionally doping potential barrier layer 60, this unintentionally doping potential barrier layer 60 be produced on unintentionally above doped aluminum nitride space layer 50.The material of described unintentionally doping potential barrier layer 60 is Al
xga
1-xthe composite bed of N and AlN, total growth thickness is 10-30nm, and the al composition of aluminum gallium nitride is 0.10≤x≤0.35, and the thickness of aluminium nitride is 0.7-3nm, and number is at least 1 layer, is inserted into any position among aluminum gallium nitride.The advantage of this unintentionally doping potential barrier layer 60 is, one is the aluminum nitride thin layer utilizing strong polarization, induces more highdensity two-dimensional electron gas, can keep the crystal mass that barrier material is higher simultaneously, prevent the reduction of channel electron mobility; Two is the effective barrier heights improving channel electrons, gate current during reduction devices function.
One unintentionally doped gallium nitride cap 70, this unintentionally doped gallium nitride cap 70 be produced on unintentionally above doping potential barrier layer 60, thickness is 1-5nm.This unintentionally doped gallium nitride cap 70 can reduce device technology difficulty as cap layers.
Also coordinating referring again to Fig. 2 consults shown in Fig. 1, and the present invention also provides the manufacture method of a kind of gallium nitrate based HEMT of tool barrier layer, comprises the steps:
Step 1: select a substrate 10, this substrate 10 is silicon carbide substrates or Sapphire Substrate or silicon substrate, and the thickness of this substrate 10 is 300-650 μm;
Step 2: grow one deck nucleating layer 20 over the substrate 10, described nucleating layer 20 is gallium nitride or aluminium nitride or aluminum gallium nitride, and this nucleating layer 20 growth thickness is 0.01-0.50 μm, and preferred value is 0.03-0.30 μm;
Step 3: grow the resistive formation 30 that unintentionally adulterates on nucleating layer 20, resistivity is greater than 10
6Ω .cm, the material of this resistive formation 30 that unintentionally adulterates is Al
yga
1-yn, al composition is 0≤y≤0.15, and growth thickness is 1-5 μm.The room temperature resistivity of the described resistive formation 30 that unintentionally adulterates is greater than 1 × 10
6Ω cm, preferred value is greater than 1 × 10
8Ω cm;
Step 4: resistive formation 30 grows the mobility channel layer 40 that unintentionally adulterates unintentionally adulterating, carrier mobility is greater than 500cm
2/ Vs, the material of this mobility channel layer 40 that unintentionally adulterates is gallium nitride, and growth thickness is 10-100nm.The described mobility channel layer 40 that unintentionally adulterates is the operation raceway groove of two-dimensional electron gas, and room temperature mobilities is greater than 500cm
2/ Vs, preferred value is greater than 700cm
2/ Vs;
Step 5: grow unintentionally doped aluminum nitride space layer 50 unintentionally adulterating on mobility channel layer 40, growth thickness is 0.7-3nm, and preferred value is 1nm.Described unintentionally doped aluminum nitride space layer 50 can improve surface density and the mobility of 2DEG, reduces heterojunction boundary to the impact of raceway groove two-dimensional electron gas, improves the combination property of heterogeneous structure material;
Step 6: grow unintentionally doping potential barrier layer 60 in unintentionally doped aluminum nitride space layer 50.The material of described unintentionally doping potential barrier layer 60 is Al
xga
1-xthe composite bed of N and AlN, total growth thickness is 10-30nm, and the al composition of aluminum gallium nitride is 0.10≤x≤0.35, and the thickness of aluminium nitride is 0.7-3nm, and number is at least 1 layer, is inserted into any position among aluminum gallium nitride;
Step 7: grow unintentionally doped gallium nitride cap 70 on unintentionally doping potential barrier layer 60, described unintentionally doped gallium nitride cap 70 thickness is 1-5nm, completes preparation.
This manufacture method, including, but not limited to metal-organic chemical vapor deposition equipment method, molecular beam epitaxy and vapour phase epitaxy, preferentially adopts metal-organic chemical vapor deposition equipment method.
Embodiment:
The invention provides a kind of gallium nitrate based HEMT-structure of tool barrier layer, comprising:
One substrate 10, this substrate 10 material is sapphire.
One nucleating layer 20, this nucleating layer 20 is produced on above substrate 10.The material of this nucleating layer 20 is low temperature nitride gallium, and thickness is 100nm;
One unintentionally adulterate resistive formation 30, this resistive formation 30 that unintentionally adulterates is produced on above nucleating layer 20.The al composition y=0 of this resistive formation 30 that unintentionally adulterates, the material of this resistive formation 30 that unintentionally adulterates is gallium nitride, and thickness is 3 μm.
One unintentionally adulterates mobility channel layer 40, and this mobility channel layer 40 that unintentionally adulterates is produced on above the resistive formation 30 that unintentionally adulterates.This material unintentionally adulterating high mobility layer channel layer 40 is gallium nitride, and thickness is 30nm.
One unintentionally doped aluminum nitride space layer 50, this unintentionally doped aluminum nitride space layer 50 be produced on above the high mobility gallium nitride channel layer 40 that unintentionally adulterates.The thickness of described unintentionally doped aluminum nitride space layer 50 is 1nm.
One unintentionally doping potential barrier layer 60, this unintentionally doping potential barrier layer 60 be produced on unintentionally above doped aluminum nitride space layer 50.The material of described unintentionally doping potential barrier layer 60 is Al
0.25ga
0.75the composite bed of N and AlN, gross thickness is 21nm, and the al composition of aluminum gallium nitride is 0.25, and the thickness of aluminium nitride is 1nm, and number is 1 layer, and the particular location be inserted among aluminum gallium nitride is as follows: Al
0.25ga
0.75n (15nm)/AlN (1nm)/Al
0.25ga
0.75n (5nm).
One unintentionally doped gallium nitride cap 70, this unintentionally doped gallium nitride cap 70 be produced on above the novel barrier layer 60 that unintentionally adulterates, thickness is 3nm.
The invention provides the manufacture method of a kind of gallium nitrate based HEMT of tool barrier layer, adopt metal-organic chemical vapor deposition equipment method, comprise the steps:
Step 1: select a substrate 10, this substrate 10 is Sapphire Substrate;
Step 2: grow one deck nucleating layer 20 over the substrate 10, material is gallium nitride, and growth temperature is 500-600 DEG C, and growth pressure is 53.34-80.01kPa, and growth thickness is 100nm;
Step 3: grow the resistive formation 30 that unintentionally adulterates on nucleating layer 20, material is gallium nitride, and growth temperature is 900-1100 DEG C, and preferred value scope is 1020-1100 DEG C, and growth thickness is 3 μm;
Step 4: resistive formation 30 grows the mobility channel layer 40 that unintentionally adulterates unintentionally adulterating, material is gallium nitride, and growth thickness is 30nm, and growth temperature is 900-1100 DEG C, and room temperature mobilities is greater than 500cm
2/ Vs, preferred value is greater than 700cm
2/ Vs;
Step 5: grow unintentionally doped aluminum nitride space layer 50 unintentionally adulterating on mobility channel layer 40, growth thickness is 1nm, and growth temperature is 850-1150 DEG C;
Step 6: grow unintentionally doping potential barrier layer 60 in unintentionally doped aluminum nitride space layer 50, described unintentionally doping potential barrier layer 60 is Al
0.25ga
0.75the composite bed of N and AlN, total growth thickness is 21nm, and growth temperature is 850-1150 DEG C, and the al composition of aluminum gallium nitride is 0.25, and the thickness of aluminium nitride is 1nm, and number is 1 layer, and concrete growth structure is as follows: Al
0.25ga
0.75n (15nm)/AlN (1nm)/Al
0.25ga
0.75n (5nm);
Step 7: grow unintentionally doped gallium nitride cap 70 on unintentionally doping potential barrier layer 60, growth thickness is 3nm, and growth temperature is 850-1150 DEG C, completes preparation.
Fig. 3 (b) calculates in embodiment being with of the HEMT-structure with novel barrier layer and electron distributions figure, Fig. 3 (a) for having GaN (the 3nm)/Al of traditional barrier layer
0.25ga
0.75being with and electron distributions figure of N (20nm)/AlN (1nm)/GaN (30nm) HEMT-structure.Relatively these two figure, by inserting the aluminum nitride thin layer of 1 layer of 1nm in traditional barrier layer, barrier height improves about 0.8eV, is expected to the gate current reducing devices function; 2DEG surface density is from original 1.13 × 10 simultaneously
13cm
-2increase to 1.32 × 1
13cm
-2, the amplitude of increase is 16.8%.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. a gallium nitride based transistor structure with high electron mobility for tool barrier layer, comprising:
One substrate;
One nucleating layer, this nucleating layer is produced on above substrate;
One unintentionally adulterates resistive formation, and this resistive formation that unintentionally adulterates is produced on above nucleating layer;
One unintentionally adulterates mobility channel layer, and this mobility channel layer that unintentionally adulterates is produced on above the resistive formation that unintentionally adulterates;
One unintentionally doped aluminum nitride space layer, this unintentionally doped aluminum nitride space layer be produced on above the mobility channel layer that unintentionally adulterates;
One unintentionally doping potential barrier layer, this unintentionally doping potential barrier layer be produced on unintentionally above doped aluminum nitride space layer, the material of this unintentionally doping potential barrier layer is Al
xga
1-xthe composite bed of N and AlN, gross thickness is 10-30nm, and the al composition of aluminum gallium nitride is 0.10≤x≤0.35, and the thickness of aluminium nitride is 0.7-3nm, and the number of aluminium nitride is at least 1 layer;
One unintentionally doped gallium nitride cap, this unintentionally doped gallium nitride cap be produced on unintentionally above doping potential barrier layer.
2. the gallium nitride based transistor structure with high electron mobility of tool barrier layer according to claim 1, the material of the resistive formation that wherein unintentionally adulterates is Al
yga
1-yn, al composition is 0≤y≤0.15, and thickness is 1-5 μm.
3. the gallium nitride based transistor structure with high electron mobility of tool barrier layer according to claim 1, the material of the mobility channel layer that wherein unintentionally adulterates is gallium nitride, and thickness is 10-100nm.
4. a manufacture method for the GaN base transistor with high electronic transfer rate of tool barrier layer, comprises the steps:
Step 1: select a substrate;
Step 2: at Grown one deck nucleating layer, growth thickness is 0.01-0.50 μm;
Step 3: grow the resistive formation that unintentionally adulterates on nucleating layer;
Step 4: grow the mobility channel layer that unintentionally adulterates on the resistive formation that unintentionally adulterates;
Step 5: grow unintentionally doped aluminum nitride space layer unintentionally adulterating on mobility channel layer, growth thickness is 0.73nm;
Step 6: grow unintentionally doping potential barrier layer in unintentionally doped aluminum nitride space layer, the material of this unintentionally doping potential barrier layer is Al
xga
1-xthe composite bed of N and AlN, gross thickness is 10-30nm, and the al composition of aluminum gallium nitride is 0.10≤x≤0.35, and the thickness of aluminium nitride is 0.7-3nm, and the number of aluminium nitride is at least 1 layer;
Step 7: grow unintentionally doped gallium nitride cap on unintentionally doping potential barrier layer, thickness is 1-5nm, completes preparation.
5. the manufacture method of the GaN base transistor with high electronic transfer rate of tool barrier layer according to claim 4, the material of the resistive formation that wherein unintentionally adulterates is Al
yga
1-yn, al composition is 0≤y≤0.15, and thickness is 1-5 μm.
6. the manufacture method of the GaN base transistor with high electronic transfer rate of tool barrier layer according to claim 4, the material of the mobility channel layer that wherein unintentionally adulterates is gallium nitride, and thickness is 10-100nm.
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| CN103996706A (en) * | 2014-04-16 | 2014-08-20 | 中国科学院半导体研究所 | Nitride-based transistor and preparation method thereof |
| CN104485357B (en) * | 2014-12-17 | 2017-05-03 | 中国科学院半导体研究所 | HEMT with gallium nitride high-resistivity layer and preparation method |
| CN104465403B (en) * | 2014-12-29 | 2017-11-17 | 苏州能屋电子科技有限公司 | The preparation method of enhanced AlGaN/GaN HEMT devices |
| CN105428410B (en) * | 2015-11-20 | 2018-03-02 | 成都海威华芯科技有限公司 | GaN HEMT devices with 2DEG recovery Effects |
| CN105470294A (en) * | 2015-12-08 | 2016-04-06 | 北京华进创威电子有限公司 | Vertical gallium nitride power switch device and manufacturing method therefor |
| CN106252403B (en) * | 2016-08-29 | 2019-08-02 | 中国科学院半导体研究所 | A kind of HEMT epitaxial structure and preparation method |
| CN107564799A (en) * | 2017-08-23 | 2018-01-09 | 中国科学院半导体研究所 | The surface treatment method of GaN substrate |
| CN108416115B (en) * | 2018-02-09 | 2022-12-20 | 复旦大学 | Method for calculating channel current of gallium nitride-based high-power high-electron-mobility transistor |
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