CN102842613A - Double-heterostructure GaN-based high-electron mobility transistor structure and preparation method - Google Patents
Double-heterostructure GaN-based high-electron mobility transistor structure and preparation method Download PDFInfo
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- CN102842613A CN102842613A CN2012103480069A CN201210348006A CN102842613A CN 102842613 A CN102842613 A CN 102842613A CN 2012103480069 A CN2012103480069 A CN 2012103480069A CN 201210348006 A CN201210348006 A CN 201210348006A CN 102842613 A CN102842613 A CN 102842613A
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- 238000002360 preparation method Methods 0.000 title description 2
- 230000004888 barrier function Effects 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 30
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 19
- 238000003780 insertion Methods 0.000 claims abstract description 11
- 230000037431 insertion Effects 0.000 claims abstract description 11
- 229910002601 GaN Inorganic materials 0.000 claims description 110
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 55
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 51
- 230000015572 biosynthetic process Effects 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 16
- 229910017083 AlN Inorganic materials 0.000 claims description 13
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 2
- 229910002704 AlGaN Inorganic materials 0.000 abstract description 4
- 230000006911 nucleation Effects 0.000 abstract 3
- 238000010899 nucleation Methods 0.000 abstract 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 description 36
- 238000000576 coating method Methods 0.000 description 36
- 230000000694 effects Effects 0.000 description 12
- 230000005533 two-dimensional electron gas Effects 0.000 description 9
- 239000000956 alloy Substances 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 8
- 238000011161 development Methods 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 238000005036 potential barrier Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 229940044658 gallium nitrate Drugs 0.000 description 1
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- 239000012535 impurity Substances 0.000 description 1
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- 229910052594 sapphire Inorganic materials 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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Abstract
一种双异质结构氮化镓基高电子迁移率晶体管结构，包括：一衬底；一成核层，该成核层制作在衬底上面；一非有意掺杂高阻层，该非有意掺杂高阻层制作在成核层上面；一非有意掺杂插入层，该非有意掺杂插入层制作在非有意掺杂高阻层上面；一非有意掺杂高迁移率层，该非有意掺杂高迁移率层制作在非有意掺杂插入层上面；一非有意掺杂氮化铝插入层，该非有意掺杂氮化铝插入层制作在高迁移率层上面；一非有意掺杂铝镓氮势垒层，该非有意掺杂铝镓氮势垒层制作在非有意掺杂氮化铝插入层上面；一非有意掺杂氮化镓盖帽层，该非有意掺杂氮化镓盖帽层制作在非有意掺杂铝镓氮势垒层上面。
A double heterostructure GaN-based high electron mobility transistor structure, including: a substrate; a nucleation layer, the nucleation layer is fabricated on the substrate; a non-intentionally doped high-resistance layer, the non-intentional A doped high-resistance layer is fabricated on the nucleation layer; an unintentionally doped insertion layer is fabricated on the unintentionally doped high-resistance layer; an unintentionally doped high-mobility layer is unintentionally doped The intentionally doped high-mobility layer is formed on the non-intentionally doped insertion layer; a non-intentionally doped aluminum nitride insertion layer is formed on the high-mobility layer; a non-intentionally doped AlGaN barrier layer, the non-intentionally doped AlGaN barrier layer is fabricated on the non-intentionally doped AlN insertion layer; an unintentionally doped GaN cap layer, the unintentionally doped GaN The gallium capping layer is fabricated on top of the non-intentionally doped AlGaN barrier layer.
Description
Technical field
The invention belongs to technical field of semiconductors; Be meant a kind of double-heterostructure gallium nitride based transistor structure with high electron mobility and manufacture method especially; This transistor uses the high resistant aluminum gallium nitride of low al compsn as resilient coating; And respectively introduce the skim aln inserting layer in gallium nitride channel layer both sides, the high resistant aluminum gallium nitride leaks as the resilient coating that resilient coating can reduce channel electrons, improves device electric breakdown strength; And thin aln inserting layer can reduce the alloy scattering of electronics, improves channel electron mobility.
Background technology
Gallium nitride has good physics and chemical characteristic as typical case's representative of third generation wide bandgap semiconductor, is very suitable for developing high frequency, high pressure, high-power device and circuit; Adopt the HEMT of gallium nitride development; Current density is big, and power density is high, and noise is low; Frequency characteristic is good, has wide practical use in dual-use microwave power field.
HEMT, the energy gap of two kinds of materials of composition heterojunction is different, has formed potential barrier and potential well at the heterojunction boundary place; Free electron by polarity effect or modulation doping generation; Be accumulated in the triangle potential well of gallium nitride layer near the interface of non-doping, form two-dimensional electron gas, because these electronics in the potential well and the ionized impurity apart in the potential barrier; Greatly reduce Coulomb scattering, significantly improve electron mobility.
In recent years, because excellent specific properties such as the high temperature of AlGaN/GaN based high electron mobility transistor, high frequency, high breakdown electric field receive people's attention more and more, be present domestic and international research focus.For the bigger challenge of HEMT is exactly to bring up to Ka (26-40GHz) even high band more to the frequency of device, with auxiliary even replace electron tube such as travelling-wave tube amplifier.In order to improve operating frequency, must reduce grid long (Lg).Yet when grid length was reduced to nanometer scale, short-channel effect can be apparent in view, influences device performance.The important method that reducing short-channel effect influences device performance is to improve the barrier height of raceway groove both sides, reduces the leakage of channel electrons under high field.In the middle of channel layer and barrier layer, introduce the thin layer aln inserting layer, can suppress the leakage of channel electrons, and can channel electrons and aluminum gallium nitride barrier layer be separated, reduce alloy scattering, improve channel electron mobility to surface potential barrier layer direction.Aluminum gallium nitride high resistant resilient coating with low al compsn replaces high resistant gallium nitride resilient coating; Raise the barrier height of channel electrons in substrate one side; The reduction channel electrons to the leakage of resilient coating substrate direction, is the structure that present millimeter wave gallium-nitride-based devices development is the most often adopted under high field.But; Replace high resistant gallium nitride resilient coating with aluminum gallium nitride high resistant resilient coating; Though al compsn very low (generally below 5%); But still can reduce electron mobility greatly, and adopting the high electron mobility transistor material of gallium nitride for the development of high resistant resilient coating, the room temperature channel electron mobility is generally greater than 2000cm
2/ Vs, and adopt the material of high resistant aluminum gallium nitride as the high resistant resilient coating, the room temperature electron mobility generally can only be greater than 1500cm
2/ Vs is so the epitaxial material of this structure is also too controversial aspect the potentiality of development device and circuit.
Summary of the invention
The objective of the invention is to; A kind of double-heterostructure gallium nitride based transistor structure with high electron mobility and manufacture method are provided; This transistor arrangement has high two-dimensional electron gas mobility, can reduce the leakage of channel electrons to both sides, is suitable for developing high-frequency element and circuit; Can improve the puncture voltage and the power output of the device of developing, have technology advantage simple and with low cost simultaneously.
The present invention provides a kind of double-heterostructure gallium nitride based transistor structure with high electron mobility, comprising:
One substrate;
One nucleating layer, this nucleating layer is produced on above the substrate;
One non-ly has a mind to the resistive formation that mixes, and this non-resistive formation of having a mind to mix is produced on above the nucleating layer;
The one non-layer that have a mind to mix inserts, this is non-has a mind to mix and inserts layer and be produced on and non-ly have a mind to mix above the resistive formation;
The one non-high mobility layer of having a mind to mix, this non-high mobility layer of having a mind to mix are produced on non-the doping intentionally and insert above the layer;
One non-ly has a mind to doped aluminum nitride and inserts layer, and this is non-has a mind to doped aluminum nitride and insert layer and be produced on above the high mobility layer, and this is non-, and to have a mind to thickness that doped aluminum nitride inserts layer be 0.3-5nm;
The one non-aluminum gallium nitride barrier layer of having a mind to mix, this non-aluminum gallium nitride barrier layer of having a mind to mix are produced on non-ly has a mind to doped aluminum nitride and inserts above the layer, and this is non-, and have a mind to the to mix thickness of aluminum gallium nitride barrier layer is 10-30nm, and al compsn is between the 0.10-0.35;
One non-ly has a mind to the doped gallium nitride cap, and this is non-has a mind to doped gallium nitride cap and be produced on and non-ly have a mind to mix above the aluminum gallium nitride barrier layer, and this non-thickness of having a mind to the doped gallium nitride cap is 1-10nm.
The present invention also provides a kind of manufacture method of double-heterostructure gallium nitride based transistor structure with high electron mobility, comprises the steps:
Step 1: select a substrate;
Step 2: growth one deck nucleating layer on substrate;
Step 3: growth one deck is non-on nucleating layer has a mind to the resistive formation that mixes;
Step 4: the non-insertion layer of having a mind to mix of growth on the non-resistive formation of having a mind to mix;
Step 5: the non-high mobility layer of having a mind to mix of growth on the non-insertion layer of having a mind to mix;
Step 6: the non-doped aluminum nitride intentionally of growth is inserted layer on the non-high mobility layer of having a mind to mix, and growth thickness is 0.3-5nm;
Step 7: insert the non-aluminum gallium nitride barrier layer of having a mind to mix of growth on the layer in non-doped aluminum nitride intentionally, growth thickness is 10-30nm, and al compsn is between the 0.10-0.35;
Step 8: the non-doped gallium nitride cap intentionally of growth on the non-aluminum gallium nitride barrier layer of having a mind to mix, growth thickness is 1-10nm.
Description of drawings
For further specifying content of the present invention, below in conjunction with accompanying drawing the present invention is done a detailed description, wherein:
Fig. 1 is the structural representation of double-heterostructure GaN base transistor with high electronic transfer rate of the present invention.
Fig. 2 is the preparation flow figure of double-heterostructure gallium nitride based transistor structure with high electron mobility of the present invention.
Embodiment
See also shown in Figure 1ly, a kind of double-heterostructure gallium nitride based transistor structure with high electron mobility of the present invention comprises:
One substrate 10;
One nucleating layer 20, this nucleating layer 20 is produced on above the substrate 10, and said nucleating layer 20 is gallium nitride or aluminium nitride or aluminum gallium nitride, and thickness is 0.01-0.50 μ m.
The one non-resistive formation 30 of having a mind to mix, this non-resistive formation 30 of having a mind to mix is produced on above the nucleating layer 20, and the material of the said non-resistive formation 30 of having a mind to mix is Al
yGa
1-yN, 0＜y＜0.20 wherein, thickness is 1-5 μ m, room temperature resistivity is greater than 1 * 10
6Ω .cm.The effect of this resistive formation 30 has four, and the one, reduce the lattice mismatch between substrate and the epitaxial loayer as resilient coating, improve the crystal mass of epitaxial loayer; The 2nd, reduce element leakage as resistive formation; The 3rd, raise the barrier height of raceway groove as back of the body barrier layer in resilient coating substrate one side, reduce the resilient coating of channel electrons under High-Field and leak, improve the stability of material and device; The 4th, improve the puncture voltage of device, put forward the power output of device.
The one non-layer 40 that have a mind to mix inserts, this is non-has a mind to mix and inserts layer 40 and be produced on and non-ly have a mind to mix above the resistive formation 30, and the said non-material that inserts layer 40 of having a mind to mix is aluminium nitride AlN, and thickness is 0.3-10nm.The effect of inserting layer 40 has two; The one, raise the barrier height of raceway groove in resilient coating substrate one side; Reduce the resilient coating of channel electrons under High-Field and leak, improve the stability of material and device, the 2nd, utilize binary compound that channel electrons and multi-element compounds aluminum gallium nitride resistive formation 30 are separated; Reduce the influence that aluminum gallium nitride resistive formation 30 is introduced channel electron mobility, improve raceway groove two-dimensional electron gas mobility.
The one non-high mobility layer 50 of having a mind to mix, this non-high mobility layer 50 of having a mind to mix are produced on non-the doping intentionally and insert above the layer 40, and said high mobility layer 50 is the non-doped gallium nitride of having a mind to, and thickness is 10-200nm.This high mobility layer 50 provides a good passage for two-dimensional electron gas, has also significantly improved raceway groove two-dimensional electron gas mobility simultaneously.
One non-ly has a mind to doped aluminum nitride and inserts layer 60, and this is non-has a mind to doped aluminum nitride and insert layer 60 and be produced on above the high mobility gallium nitride layer 50, saidly non-ly has a mind to doped aluminum nitride to insert layer 60 thickness be 0.3-5nm.An effect of this aln inserting layer 60 is to utilize binary compound that channel electrons and multi-element compounds aluminum gallium nitride barrier layer (the non-aluminum gallium nitride barrier layer of afterwards chatting 70 of having a mind to mix) are separated, and reduces electron scattering, further improves raceway groove two-dimensional electron gas mobility; The another one effect of aln inserting layer 60 is to utilize the characteristics of its energy gap greater than gallium nitride, effectively limits electronics to non-have a mind to mix aluminum gallium nitride barrier layer 70 and surperficial leakage.
The one non-aluminum gallium nitride barrier layer 70 of having a mind to mix, this non-aluminum gallium nitride barrier layer 70 of having a mind to mix are produced on non-doped aluminum nitride intentionally and insert above the layer 60, and the said non-aluminum gallium nitride barrier layer 70 of having a mind to mix is Al
xGa
1-xN, thickness are 10-30nm, 0.10＜x＜0.35.This non-aluminum gallium nitride barrier layer 70 of having a mind to mix forms raceway groove raceway groove two dimension electronics by polarity effect.
One non-ly has a mind to doped gallium nitride cap 80, and this is non-has a mind to doped gallium nitride cap 80 and be produced on and non-ly have a mind to mix above the aluminum gallium nitride barrier layer 70, and said non-to have a mind to doped gallium nitride cap 80 thickness be 1-10nm.This non-doped gallium nitride cap 80 intentionally can reduce the device technology difficulty as the cap layer.
Key of the present invention is to adopt on the structure gallium nitride resistive formation in the traditional high electron mobility transistor structure of unique low al compsn aluminum gallium nitride resistive formation 30 replacements; Raise the barrier height of resilient coating substrate one side by the energy gap of aluminum gallium nitride broad, the resilient coating that suppresses channel electrons leaks.Simultaneously; This structure is introduced between high mobility layer 50 and resistive formation 30 and is inserted layer 40; Said insertion layer 40 is an aluminium nitride, and channel electrons and aluminum gallium nitride resistive formation 30 are separated, and reduces the alloy scattering of 30 pairs of channel electrons of aluminum gallium nitride resistive formation; Reduce with the influence of the gallium nitride high resistant resilient coating in aluminum gallium nitride resistive formation 30 replace traditional structural with this, improve the performance of the electron mobility and the device of developing channel electron mobility.
See also Fig. 2 and combine to consult shown in Figure 1, the present invention also provides a kind of manufacture method of double-heterostructure gallium nitride based transistor structure with high electron mobility, comprises the steps:
Step 1: select a substrate 10, described substrate 10 is silicon carbide substrates or Sapphire Substrate or silicon substrate;
Step 2: growth one deck nucleating layer 20 on substrate 10, said nucleating layer 20 is gallium nitride or aluminium nitride or aluminum gallium nitride, thickness is 0.01-0.50 μ m.Described nucleating layer 20 is gallium nitride or aluminium nitride or aluminum gallium nitride, and growth temperature is 500-600 ℃, and growth thickness is 0.01-0.50 μ m, and preferred value is 0.03-0.30 μ m.
Step 3: the non-resistive formation 30 of having a mind to mix of growth one deck on nucleating layer 20, this resistive formation 30 is Al
yGa
1-yN, 0＜y＜0.20 wherein, growth temperature is 900-1100 ℃, and the preferred value scope is 1020-1100 ℃, and growth thickness is 1-5 μ m, and room temperature resistivity is greater than 1 * 10
6Ω cm, preferred value is greater than 1 * 10
8Ω cm.Described aluminum gallium nitride resistive formation 30 improves the crystal mass of epitaxial loayer on it as resilient coating, and raises the barrier height of channel electrons in resilient coating substrate one side, and the resilient coating that reduces electronics leaks, and improves the stability of material and device.
Step 4: the non-insertion layer 40 of having a mind to mix of growth on the non-resistive formation 30 of having a mind to mix; The described non-insertion layer 40 of having a mind to mix is an aluminium nitride; This layer separates aluminum gallium nitride resistive formation 30 and channel electrons, reduces the alloy scattering of channel electrons, improves channel electron mobility.This layer growth temperature is between 850-1150 ℃, and growth thickness is 0.30-10nm, and preferred value is 1nm.
Step 5: insert the non-high mobility layer 50 of having a mind to mix of growth on the layer 40 non-the doping intentionally, the said non-high mobility layer 50 of having a mind to mix is the non-doped gallium nitride of having a mind to, and thickness is 10-200nm, and growth temperature is between 850-1150 ℃.This layer is the operation raceway groove of two-dimensional electron gas, and the room temperature electron mobility is greater than 500cm2/Vs, and preferred value is greater than 700cm2/Vs.
Step 6: the non-doped aluminum nitride intentionally of growth is inserted layer 60 on the non-high mobility layer 50 of having a mind to mix, and growth temperature is between 850-1150 ℃, and growth thickness is 0.3-5nm, and preferred value is 1nm.Described aln inserting layer 60, this layer can improve the mobility and the surface density of two-dimensional electron gas, improve the combination property of heterogeneous structure material.
Step 7: insert the non-aluminum gallium nitride barrier layer 70 of having a mind to mix of growth on the layer 60 in non-doped aluminum nitride intentionally, growth thickness is 10-30nm, and al compsn is between the 0.10-0.35, and growth temperature is between 850-1150 ℃.
Step 8: the non-doped gallium nitride cap 80 intentionally of growth on the non-aluminum gallium nitride barrier layer 70 of having a mind to mix, growth thickness is 1-10nm, growth temperature is 850-1150 ℃.This layer is the non-doping of having a mind to.
Wherein, the layers of material of growth preferentially adopts the metal-organic chemical vapor deposition equipment method including, but not limited to metal-organic chemical vapor deposition equipment method, molecular beam epitaxy and vapour phase epitaxy on substrate 10.
The invention provides a kind of high electron mobility transistor structure material that is suitable for developing high-frequency element; This structure is raised the barrier height of raceway groove both sides, suppresses electronics leakage to barrier layer surface resilient coating substrate both direction under high field, improves the stability of material and device; Simultaneously through introducing the thin layer that inserts; Channel electrons is separated with ternary compound, reduce alloy scattering, improve electron mobility.Therefore, the present invention can significantly improve the performance of gallium nitrate based high frequency, high-power component and circuit.
First effect of the present invention: this transistor adopts the high resistant aluminum gallium nitride as resilient coating, can suppress channel electrons leakage to the resilient coating direction under high field, is suitable for developing high-frequency element and circuit.
Second effect of the present invention: this transistor adopts the high resistant aluminum gallium nitride as resilient coating, can improve the puncture voltage and the power output of the device of developing.
The 3rd effect of the present invention: even this transistor adopts the high resistant aluminum gallium nitride as resilient coating, owing to the shielding action of thin layer aln inserting layer to alloy scattering, this structure still has high two-dimensional electron gas mobility.
The 4th effect of the present invention: this transistor is all introduced the thin layer aln inserting layer in the both sides of gallium nitride channel layer, reduces the leakage of channel electrons to both sides.
The present invention adopts the aluminum gallium nitride of novel low al compsn as the high resistant resilient coating; This layer one side reduces the lattice mismatch between substrate and the epitaxial loayer as resilient coating; Improve quality of materials, raise potential barrier on the other hand, suppress the leakage of channel electrons to the resilient coating direction; Improve stability of material, in order to development high-frequency element and circuit.
The present invention introduces the thin layer aln inserting layer between aluminum gallium nitride high resistant resilient coating and gallium nitride channel layer; This layer one side further raised barrier height; The resilient coating that reduces electronics greatly leaks; Can channel electrons and aluminum gallium nitride high resistant resilient coating be separated on the other hand, reduce the alloy scattering of electronics, improve channel electron mobility.
The present invention can obtain to be suitable for the high electron mobility transistor structure material of high frequency millimetric wave device and circuit development; This material is introduced wideer thin layer aln inserting layer and the aluminum gallium nitride high resistant resilient coating in forbidden band in substrate one side of channel layer; The resilient coating that reduces channel electrons leaks, and improves the confinement characteristic of electronics.
The present invention can obtain the more heterogeneous structure material of high electron mobility; This material is introduced the thin layer aln inserting layer between aluminum gallium nitride high resistant resilient coating and gallium nitride channel layer; Channel electrons and aluminum gallium nitride resilient coating are separated, reduce alloy scattering, improve channel electron mobility.
Above-described specific embodiment; Be that the object of the invention, technical scheme and beneficial effect have been carried out further explain; All within spirit of the present invention and principle, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (11)
1. double-heterostructure gallium nitride based transistor structure with high electron mobility comprises:
One substrate;
One nucleating layer, this nucleating layer is produced on above the substrate;
One non-ly has a mind to the resistive formation that mixes, and this non-resistive formation of having a mind to mix is produced on above the nucleating layer;
The one non-layer that have a mind to mix inserts, this is non-has a mind to mix and inserts layer and be produced on and non-ly have a mind to mix above the resistive formation;
The one non-high mobility layer of having a mind to mix, this non-high mobility layer of having a mind to mix are produced on non-the doping intentionally and insert above the layer;
One non-ly has a mind to doped aluminum nitride and inserts layer, and this is non-has a mind to doped aluminum nitride and insert layer and be produced on above the high mobility layer, and this is non-, and to have a mind to thickness that doped aluminum nitride inserts layer be 0.3-5nm;
The one non-aluminum gallium nitride barrier layer of having a mind to mix, this non-aluminum gallium nitride barrier layer of having a mind to mix are produced on non-ly has a mind to doped aluminum nitride and inserts above the layer, and this is non-, and have a mind to the to mix thickness of aluminum gallium nitride barrier layer is 10-30nm, and al compsn is between the 0.10-0.35;
One non-ly has a mind to the doped gallium nitride cap, and this is non-has a mind to doped gallium nitride cap and be produced on and non-ly have a mind to mix above the aluminum gallium nitride barrier layer, and this non-thickness of having a mind to the doped gallium nitride cap is 1-10nm.
2. double-heterostructure gallium nitride based transistor structure with high electron mobility according to claim 1, wherein nucleating layer is gallium nitride or aluminium nitride or aluminum gallium nitride, thickness is 0.01-0.50 μ m.
3. double-heterostructure gallium nitride based transistor structure with high electron mobility according to claim 1, the material of the wherein non-resistive formation of having a mind to mix is Al
yGa
1-yN, 0＜y＜0.20 wherein, thickness is 1-5 μ m, room temperature resistivity is greater than 1 * 10
6Ω .cm.
4. double-heterostructure gallium nitride based transistor structure with high electron mobility according to claim 1, the wherein non-material that inserts layer of having a mind to mix is aluminium nitride AlN, thickness is 0.3-10nm.
5. double-heterostructure gallium nitride based transistor structure with high electron mobility according to claim 1, the material of the wherein non-high mobility layer of having a mind to mix is GaN, thickness is 10-200nm.
6. the manufacture method of a double-heterostructure gallium nitride based transistor structure with high electron mobility comprises the steps:
Step 1: select a substrate;
Step 2: growth one deck nucleating layer on substrate;
Step 3: growth one deck is non-on nucleating layer has a mind to the resistive formation that mixes;
Step 4: the non-insertion layer of having a mind to mix of growth on the non-resistive formation of having a mind to mix;
Step 5: the non-high mobility layer of having a mind to mix of growth on the non-insertion layer of having a mind to mix;
Step 6: the non-doped aluminum nitride intentionally of growth is inserted layer on the non-high mobility layer of having a mind to mix, and growth thickness is 0.3-5nm;
Step 7: insert the non-aluminum gallium nitride barrier layer of having a mind to mix of growth on the layer in non-doped aluminum nitride intentionally, growth thickness is 10-30nm, and al compsn is between the 0.10-0.35;
Step 8: the non-doped gallium nitride cap intentionally of growth on the non-aluminum gallium nitride barrier layer of having a mind to mix, growth thickness is 1-10nm.
7. the manufacture method of double-heterostructure gallium nitride based transistor structure with high electron mobility according to claim 6, wherein nucleating layer is gallium nitride or aluminium nitride or aluminum gallium nitride, thickness is 0.01-0.50 μ m.
8. the manufacture method of double-heterostructure gallium nitride based transistor structure with high electron mobility according to claim 6, the material of the wherein non-resistive formation of having a mind to mix is Al
yGa
1-yN, 0＜y＜0.20 wherein, growth temperature is 900-1200 ℃, and thickness is 1-5 μ m, and room temperature resistivity is greater than 1 * 10
6Ω .cm.
9. the manufacture method of double-heterostructure gallium nitride based transistor structure with high electron mobility according to claim 6, the wherein non-material that inserts layer of having a mind to mix is aluminium nitride AlN, thickness is 0.3-10nm.
10. the manufacture method of double-heterostructure gallium nitride based transistor structure with high electron mobility according to claim 6, the material of the wherein non-high mobility layer of having a mind to mix is gallium nitride GaN, thickness is 10-200nm.
11. the manufacture method of double-heterostructure gallium nitride based transistor structure with high electron mobility according to claim 6; The layers of material of wherein on substrate, growing preferentially adopts the metal-organic chemical vapor deposition equipment method including, but not limited to metal-organic chemical vapor deposition equipment method, molecular beam epitaxy and vapour phase epitaxy.
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| CN103117304A (en) * | 2013-02-20 | 2013-05-22 | 中国科学院半导体研究所 | Gallium nitride field effect transistor structure with composite space layer and manufacture method thereof |
| CN103123934A (en) * | 2013-02-07 | 2013-05-29 | 中国科学院半导体研究所 | Gallium-nitride-based high electronic mobility transistor structure with barrier layer and manufacture method thereof |
| CN104576714A (en) * | 2015-01-23 | 2015-04-29 | 北京大学 | High-migration-rate GaN-base heterostructure on silicon substrate and preparing method thereof |
| CN106024881A (en) * | 2016-07-26 | 2016-10-12 | 中国科学院半导体研究所 | Dual-heterogeneous gallium nitride based field effect transistor structure and manufacturing method |
| CN106449748A (en) * | 2016-12-22 | 2017-02-22 | 成都海威华芯科技有限公司 | Epitaxial structure of gallium-nitride-based transistors with high electron mobility |
| CN118763107A (en) * | 2024-09-06 | 2024-10-11 | 江西兆驰半导体有限公司 | A gallium nitride-based high electron mobility transistor and a method for preparing the same |
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| CN101266999A (en) * | 2007-03-14 | 2008-09-17 | 中国科学院半导体研究所 | Gallium Nitride-Based Double Heterojunction Field Effect Transistor Structure and Fabrication Method |
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| CN103123934A (en) * | 2013-02-07 | 2013-05-29 | 中国科学院半导体研究所 | Gallium-nitride-based high electronic mobility transistor structure with barrier layer and manufacture method thereof |
| CN103123934B (en) * | 2013-02-07 | 2015-08-12 | 中国科学院半导体研究所 | The gallium nitride based transistor structure with high electron mobility of tool barrier layer and manufacture method |
| CN103117304A (en) * | 2013-02-20 | 2013-05-22 | 中国科学院半导体研究所 | Gallium nitride field effect transistor structure with composite space layer and manufacture method thereof |
| CN104576714A (en) * | 2015-01-23 | 2015-04-29 | 北京大学 | High-migration-rate GaN-base heterostructure on silicon substrate and preparing method thereof |
| CN106024881A (en) * | 2016-07-26 | 2016-10-12 | 中国科学院半导体研究所 | Dual-heterogeneous gallium nitride based field effect transistor structure and manufacturing method |
| CN106449748A (en) * | 2016-12-22 | 2017-02-22 | 成都海威华芯科技有限公司 | Epitaxial structure of gallium-nitride-based transistors with high electron mobility |
| CN118763107A (en) * | 2024-09-06 | 2024-10-11 | 江西兆驰半导体有限公司 | A gallium nitride-based high electron mobility transistor and a method for preparing the same |
| CN118763107B (en) * | 2024-09-06 | 2024-12-31 | 江西兆驰半导体有限公司 | Gallium nitride-based high electron mobility transistor and preparation method thereof |
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