CN102760745B - Light emitting diode matrix - Google Patents
Light emitting diode matrix Download PDFInfo
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- CN102760745B CN102760745B CN201110102886.7A CN201110102886A CN102760745B CN 102760745 B CN102760745 B CN 102760745B CN 201110102886 A CN201110102886 A CN 201110102886A CN 102760745 B CN102760745 B CN 102760745B
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Abstract
The present invention discloses a kind of light emitting diode matrix, and this light emitting diode matrix is made up of N number of (N >=3) light emitting diode, comprising: permanent substrate; Tack coat is positioned on permanent substrate; Second conductive layer is positioned on tack coat; Second separate layer is positioned on the second conductive layer; Cross-over connection metal level is positioned on the second separate layer; First separate layer is positioned on cross-over connection metal level; Conductivity articulamentum is positioned on the first separate layer; Epitaxial structure is positioned on conductivity articulamentum; First electrode is positioned on epitaxial structure.Be electrically connected to each other through cross-over connection metal level between light emitting diode.
Description
Technical field
The present invention relates to a kind of light emitting diode matrix, particularly relate to one and formed light emitting diode matrix by N number of (N >=3) light emitting diode.
Background technology
In recent years, due to the progress of extension and technology, make one of light-emitting diode (lightemittingdiode is called for short LED) solid-state illumination light source becoming great potential.Due to the restriction of physical mechanism, LED only can with DC powered, therefore, in any Lighting Design using LED as light source, all need electronic component such as collocation rectification and step-down etc., be converted to the spendable DC power supply of LED with alternating current Utilities Electric Co. directly provided.But increase the electronic component such as rectification and step-down, except the increase causing illumination cost, the low AC/DC conversion efficiency of the electronic components such as rectification and step-down, volume etc. bigger than normal all can affect reliability when LED is used in normal lighting application and useful life.
Summary of the invention
Light emitting diode matrix comprises: permanent substrate; Tack coat is positioned on permanent substrate; Second conductive layer is positioned on tack coat; Second separate layer is positioned on the second conductive layer; Cross-over connection metal level is positioned on the second separate layer; First separate layer is positioned on cross-over connection metal level; Conductivity articulamentum is positioned on the first separate layer; Epitaxial structure is positioned on conductivity articulamentum; And first electrode be positioned on epitaxial structure.
Light emitting diode matrix comprises: permanent substrate; Tack coat is positioned on permanent substrate; First conductive layer is positioned on tack coat; Second separate layer is positioned on the first conductive layer; Cross-over connection metal level is positioned on the second separate layer; First separate layer is positioned on cross-over connection metal level; Conductivity articulamentum is positioned on the first separate layer; And epitaxial structure is positioned on conductivity articulamentum.
Light emitting diode matrix, comprises N number of light emitting diode (N >=3), and is electrically connected to each other through cross-over connection metal level between light emitting diode.
Accompanying drawing explanation
Figure 1A-1I is the structural profile schematic diagram of disclosed light emitting diode matrix 1.
Figure 1A '-1G ' is the structure schematic top plan view of disclosed light emitting diode matrix 1.
Fig. 2 A-2I is the structural profile schematic diagram of disclosed light emitting diode matrix 2.
The structure schematic top plan view that Fig. 2 A '-2G ' is disclosed light emitting diode matrix 2.
Description of reference numerals
1,2: light emitting diode matrix
11: growth substrate
12: the first conductive-type semiconductor layers
13: active layer
14: the second conductive-type semiconductor layers
15: groove
16: platform
17: conductivity articulamentum
18: aisle
19: the first separate layers
20: conduction region
21: cross-over connection metal level
22: the second separate layers
23: the second conductive layers
24: tack coat
25: permanent substrate
26: the first conductive layers
27: the first electrodes
28: the second electrodes
I: first area
II: second area
III: the three region
A, b: electrically shallow trench isolation
Embodiment
The present invention discloses the light emitting diode matrix be made up of N (N >=3) individual light emitting diode, comprising the first light emitting diode, the second light emitting diode ... sequentially to (N-1) light emitting diode and N light emitting diode.Light emitting diode matrix has first area (I), the 3rd region (III) again, and wherein first area (I) comprises the first light emitting diode, and the 3rd region (III) comprises N light emitting diode; And second area (II) is positioned between first area (I) and the 3rd region (III), and comprise the second light emitting diode ... sequentially to (N-1) light emitting diode.
Embodiment one be disclosed as by 3 light emitting diode matrixs that light emitting diode forms 1.Its structural profile schematic diagram is as shown in Figure 1A-1I, and structure schematic top plan view is as shown in Figure 1A '-1G '.The manufacture method of light emitting diode matrix 1, comprises the following steps:
1. provide growth substrate 11, and form epitaxial structure on growth substrate 11, its epitaxial structures comprises the first conductive-type semiconductor layer 12, active layer 13, and the second conductive-type semiconductor layer 14, as shown in Figure 1A and Figure 1A '.
2. then etch first area (I), second area (II) portion of epi structure to form multiple groove 15, wherein not etched epitaxial structure then forms multiple platform 16; And the epitaxial structure in the 3rd region (III) is not etched, as shown in Figure 1B and Figure 1B '.
3. on the subregion of multiple platform 16, form conductivity articulamentum 17 again, wherein then do not formed multiple aisle 18 by the land regions that conductivity articulamentum 17 covers; As shown in Fig. 1 C and Fig. 1 C '.
4. on partially conductive articulamentum 17, on multiple aisle 18 and the sidewall of multiple groove 15 form the first separate layer 19, but on the partially conductive articulamentum 17 of first area (I) and on whole conductivity articulamentums 17 in the 3rd region (III) not cover by the first separate layer 19.Conduction region 20 be second area (II) conductivity articulamentum 17 on not by region that the first separate layer 19 covers.As shown in Fig. 1 D and Fig. 1 D '.
5. on the first separate layer 19, conduction region 20, within multiple groove 15, and the 3rd region (III) whole conductivity articulamentums 17 on form cross-over connection metal level 21, but in the partially conductive articulamentum 17 of first area (I) using the electric connection as follow-up second conductive layer and the second conductive-type semiconductor layer, thus thereon side cover by cross-over connection metal level 21.And a region being positioned at the contiguous conduction region 20 of second area (II) is not also by cross-over connection metal level 21 is covered, can be used as electrical isolated use; As shown in Fig. 1 E and Fig. 1 E '.The part cross-over connection metal level 21 being positioned at first area (I) to extend within multiple groove 15 and is electrically connected with the first conductive-type semiconductor layer 12; The cross-over connection metal level 21 be positioned on multiple platform 16 and aisle 18 is electrically completely cut off by the first separate layer 19 and the second conductive-type semiconductor layer 14.The cross-over connection metal level 21 be arranged on second area (II) conduction region 20 is electrically connected by conductivity articulamentum 17 and the second conductive-type semiconductor layer 14, and part cross-over connection metal level 21 to extend within multiple groove 15 and is electrically connected with the first conductive-type semiconductor layer 12; The cross-over connection metal level 21 be positioned on multiple platform 16 and aisle 18 is electrically completely cut off by the first separate layer 19 and the second conductive-type semiconductor layer 14.The cross-over connection metal level 21 being positioned at the 3rd region (III) is electrically connected by conductivity articulamentum 17 and the second conductive-type semiconductor layer 14.
6. on cross-over connection metal level 21 and on a region of second area (II), form the second separate layer 22, but the second separate layer 22 does not cover the partially conductive articulamentum 17 of first area (I); As shown in Fig. 1 F and Fig. 1 F '.
7. on the second separate layer 22 and on the partially conductive articulamentum 17 of first area (I), form the second conductive layer 23; As shown in Fig. 1 G and Fig. 1 G '.
8. form tack coat 24 on the second conductive layer 23; Permanent substrate 25 is provided; And bondd by tack coat 24 and permanent substrate 25, as shown in fig. 1h.
9. remove growth substrate 11 to expose the first conductive-type semiconductor layer 12 and its surface of alligatoring.Then, be etched down to from the first conductive-type semiconductor layer 12 in multiple aisle 18 and expose the first separate layer 19, to form N number of light emitting diode.Wherein the first light emitting diode is positioned at first area (I), the second light emitting diode ... be sequentially positioned at second area (II) to (N-1) light emitting diode and N light emitting diode is positioned at the 3rd region (III).Finally, on the first conductive-type semiconductor layer 12 coarse surface of N light emitting diode, form the first electrode 27, namely form the light emitting diode matrix 1 through the N number of light emitting diode of cross-over connection metal level 21 electrical series, as shown in Figure 1 I.
Embodiment two be disclosed as by 3 light emitting diode matrixs that light emitting diode forms 2.Its structural profile schematic diagram is as shown in Fig. 2 A-2I, and structure schematic top plan view is as shown in Fig. 2 A '-2G '.The manufacture method of light emitting diode matrix 2, comprises the following steps:
1. provide growth substrate 11, and form epitaxial structure on growth substrate 11, its epitaxial structures comprises the first conductive-type semiconductor layer 12, active layer 13, and the second conductive-type semiconductor layer 14, as shown in Fig. 2 A and Fig. 2 A '.
2. then etching part epitaxial structure is to form multiple groove 15, and wherein not etched epitaxial structure then forms multiple platform 16, as shown in Fig. 2 B and Fig. 2 B '.
3. on the subregion of multiple platform 16, form conductivity articulamentum 17 again, wherein then do not formed multiple aisle 18 by the land regions that conductivity articulamentum 17 covers; As shown in Fig. 2 C and Fig. 2 C '.
4. on partially conductive articulamentum 17, on multiple aisle 18 and the sidewall of multiple groove 15 form the first separate layer 19.The conductivity articulamentum 17 in second area (II), the 3rd region (III) is not then defined as conduction region 20 by the region that the first separate layer 19 covers; As shown in Fig. 2 D and Fig. 2 D '.
5. on part first separate layer 19, within conduction region 20 and the multiple grooves 15 except the 3rd region (III), form cross-over connection metal level 21.But in the use that part first separate layer 19 of first area (I) electrically will completely cut off as follow-up second conductive layer and the first conductive-type semiconductor layer, therefore square thereon covering cross-over connection metal level 21.Within multiple grooves 15 in the 3rd region (III) and the first separate layer 19 of multiple platform will as the electrically isolated use of follow-up first conductive layer and the second conductive-type semiconductor layer, therefore not square thereon one-tenth covers cross-over connection metal level 21, as shown in Fig. 2 E and Fig. 2 E '.The part cross-over connection metal level 21 being positioned at first area (I) to extend within multiple groove 15 and is electrically connected with the first conductive-type semiconductor layer 12, and the cross-over connection metal level 21 be positioned on multiple platform 16 and aisle 18 is electrically completely cut off by the first separate layer 19 and the second conductive-type semiconductor layer 14.The cross-over connection metal level 21 be positioned in second area (II) on conduction region 20 is electrically connected by conductivity articulamentum 17 and the second conductive-type semiconductor layer 14; Part cross-over connection metal level 21 to extend within multiple groove 15 and is electrically connected with the first conductive-type semiconductor layer 12; The cross-over connection metal level 21 be positioned on multiple platform 16 and aisle 18 is electrically completely cut off by the first separate layer 19 and the second conductive-type semiconductor layer 14.The cross-over connection metal level 21 be positioned in the 3rd region (III) on conduction region 20 is electrically connected by conductivity articulamentum 17 and the second conductive-type semiconductor layer 14.In addition, be arranged in second area (II), the 3rd contiguous conduction region 20, region (III) b region not for cross-over connection metal level 21 covers completely, can be used as electrical isolated use.
6. on cross-over connection metal level 21, form the second separate layer 22 on the b region do not covered completely by cross-over connection metal level 21 on part first separate layer 19 of first area (I) and in second area (II), but the second separate layer 22 do not cover the 3rd region (III) multiple grooves 15 within, on the first separate layer 19 of multiple platform and in the 3rd region (III) not by b region that cross-over connection metal level 21 covers completely; As shown in Fig. 2 F and Fig. 2 F '.
7. on the second separate layer 22, within multiple grooves 15 in the 3rd region (III), on the first separate layer 19 of multiple platform and do not formed the first conductive layer 26 by the b region that cross-over connection metal level 21 covers completely in the 3rd region (III); As shown in Fig. 2 G and Fig. 2 G '.
8. form tack coat 24 on the first conductive layer 26; Permanent substrate 25 is provided, and is bondd by tack coat 24 and permanent substrate 25, as illustrated in figure 2h.
9. remove growth substrate 11 to expose the first conductive-type semiconductor layer 12 and its surface of alligatoring.Then, be etched down to from the first conductive-type semiconductor layer 12 among multiple aisle 18 and expose the first separate layer 19, to form N number of light emitting diode.Wherein the first light emitting diode is positioned at first area (I), second light emitting diode is positioned at second area (II) to (N-1) light emitting diode, and N light emitting diode is positioned at the 3rd region (III).The first conductive-type semiconductor layer 12 not forming cross-over connection metal level 21 part in first area (I) is again etched down to and exposes conductivity articulamentum 17, and on conductivity articulamentum 17, form the second electrode 28, namely the light emitting diode matrix 2 through the N number of light emitting diode of cross-over connection metal level 21 electrical series is formed, as shown in figure 2i.
In above-described embodiment one and embodiment two, the material of growth substrate 11 comprises at least one material, is selected from the material group that GaAs, gallium phosphide, sapphire, carborundum, gallium nitride or aluminium nitride form.Epitaxial structure is made up of a kind of III-V group semi-conductor material, and this III-V group semi-conductor material is AlGaInP series compound or aluminum indium gallium nitride series compound.Conductivity articulamentum 17 comprises one or more material, is selected from the group that tin indium oxide, cadmium tin, antimony tin, indium zinc oxide, zinc oxide aluminum and zinc-tin oxide are formed.First separate layer 19, second separate layer 22 is insulating material, one or more material can be comprised respectively, be selected from silicon dioxide, titanium oxide, titanium dioxide, five groups that form of oxidation Tritanium/Trititanium, titanium sesquioxide, ceria, zinc sulphide and aluminium oxide.First conductive layer 26, second conductive layer 23 can be silver or aluminium.Tack coat 24 is electric conducting material, and composition material can be metal or metal alloy, such as AuSn, PbSn, AuGe, AuBe, AuSi, Sn, In, Au, PdIn.Permanent substrate 25 is electric conducting material, such as, comprise the materials such as carbide, metal, metal alloy, metal oxide or metallic composite.The material of cross-over connection metal level 21 comprises metal, metal alloy or metal oxide.
Embodiment cited by the present invention only in order to the present invention to be described, and is not used to limit the scope of the invention.Anyone any aobvious and easy to know modification made for the present invention or change neither depart from spirit of the present invention and scope.
Claims (10)
1. light emitting diode matrix, has first area, the 3rd region and second area, comprising:
Permanent substrate;
Tack coat, is positioned on this permanent substrate;
Second conductive layer, is positioned on this tack coat;
Second separate layer, is positioned on this second conductive layer;
Cross-over connection metal level, is positioned on this second separate layer;
First separate layer, is positioned on this cross-over connection metal level;
Conductivity articulamentum, is positioned on this first separate layer beyond the 3rd region;
Epitaxial structure, is positioned on this conductivity articulamentum, comprises:
Second conductive-type semiconductor layer;
Active layer, is positioned on this second conductive-type semiconductor layer; And
First conductive-type semiconductor layer, is positioned on this active layer; And
First electrode, is positioned on this epitaxial structure.
2. light emitting diode matrix as claimed in claim 1, wherein this epitaxial structure also comprises and extends to multiple grooves except the 3rd this first conductive-type semiconductor layer extra-regional by this second conductive-type semiconductor layer, make this first separate layer be positioned at the sidewall of the plurality of groove, and this cross-over connection metal level extend among the plurality of groove.
3. light emitting diode matrix as claimed in claim 1, wherein this conductivity articulamentum in the 3rd region part between this cross-over connection metal level and this epitaxial structure, this conductivity articulamentum in this first area part between this second conductive layer and this epitaxial structure.
4. light emitting diode matrix as claimed in claim 1, wherein also comprise conduction region, this conduction region is positioned on this conductivity articulamentum of this second area, and is not covered by this first separate layer.
5. light emitting diode matrix, has first area, the 3rd region and second area, comprising:
Permanent substrate;
Tack coat, is positioned on this permanent substrate;
First conductive layer, is positioned on this tack coat;
Second separate layer, is positioned on this first conductive layer;
Cross-over connection metal level, is positioned on this second separate layer beyond the 3rd region;
First separate layer, is positioned on this cross-over connection metal level;
Conductivity articulamentum, is positioned on this first separate layer; And
Epitaxial structure, is positioned on this conductivity articulamentum, comprises:
Second conductive-type semiconductor layer;
Active layer, is positioned on this second conductive-type semiconductor layer; And
First conductive-type semiconductor layer, is positioned on this active layer.
6. the light emitting diode matrix as described in claim 1 or 5, this array also comprises N number of light emitting diode and multiple aisle between this N number of light emitting diode, wherein N >=3, and this N number of light emitting diode comprises the first light emitting diode, the second light emitting diode to (N-1) light emitting diode and N light emitting diode; This first light emitting diode is positioned at this first area, this N light emitting diode is positioned at the 3rd region, this second light emitting diode is positioned at this second area to this (N-1) light emitting diode, wherein this second area is between this first area and the 3rd region, and to be one another in series electric connection through this cross-over connection metal level between this N number of light emitting diode.
7. light emitting diode matrix as claimed in claim 5, wherein also comprise multiple multiple grooves being extended to this first conductive-type semiconductor layer by this second conductive-type semiconductor layer, and this first separate layer is positioned at the sidewall of the plurality of groove, this first conductive layer is extended among the plurality of groove in the 3rd region, and this cross-over connection metal level extend among the plurality of groove of this first area and this second area.
8. light emitting diode matrix as claimed in claim 5, wherein this conductivity articulamentum in this first area and this second area part between this first separate layer and this epitaxial structure, and this conductivity articulamentum in the 3rd region part between this cross-over connection metal level and this epitaxial structure.
9. light emitting diode matrix as claimed in claim 5, wherein also comprise conduction region, this conduction region is positioned on this conductivity articulamentum in this second area and the 3rd region, and is not covered by this first separate layer.
10. the light emitting diode matrix as described in claim 4 or 9, wherein also comprises electrical shallow trench isolation, and this electrical shallow trench isolation is close to this conduction region and is not covered by this cross-over connection metal level above it.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110102886.7A CN102760745B (en) | 2011-04-25 | 2011-04-25 | Light emitting diode matrix |
| CN201610171733.0A CN105762166B (en) | 2011-04-25 | 2011-04-25 | Light emitting diode matrix |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110102886.7A CN102760745B (en) | 2011-04-25 | 2011-04-25 | Light emitting diode matrix |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610171733.0A Division CN105762166B (en) | 2011-04-25 | 2011-04-25 | Light emitting diode matrix |
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| CN102760745A CN102760745A (en) | 2012-10-31 |
| CN102760745B true CN102760745B (en) | 2016-04-20 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201110102886.7A Active CN102760745B (en) | 2011-04-25 | 2011-04-25 | Light emitting diode matrix |
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| CN113299816B (en) * | 2021-05-24 | 2022-03-08 | 深圳市联冀电子有限公司 | Method for mounting light emitting diode array |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI281756B (en) * | 2004-01-09 | 2007-05-21 | Huga Optotech Inc | Structure of light-emitting diode |
| CN101960601A (en) * | 2008-02-29 | 2011-01-26 | 欧司朗光电半导体有限公司 | Monolithic, optoelectronic semi-conductor body and method for the production thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007018360A1 (en) * | 2005-08-09 | 2007-02-15 | Seoul Opto Device Co., Ltd. | Ac light emitting diode and method for fabricating the same |
| TWI341039B (en) * | 2007-03-30 | 2011-04-21 | Delta Electronics Inc | Light emitting diode apparatus |
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- 2011-04-25 CN CN201110102886.7A patent/CN102760745B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI281756B (en) * | 2004-01-09 | 2007-05-21 | Huga Optotech Inc | Structure of light-emitting diode |
| CN101960601A (en) * | 2008-02-29 | 2011-01-26 | 欧司朗光电半导体有限公司 | Monolithic, optoelectronic semi-conductor body and method for the production thereof |
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| CN102760745A (en) | 2012-10-31 |
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