CN102593290A - White-light LED (Light Emitting Diode) epitaxial wafer and manufacturing process thereof, and manufacturing method of white-light LED chip - Google Patents
White-light LED (Light Emitting Diode) epitaxial wafer and manufacturing process thereof, and manufacturing method of white-light LED chip Download PDFInfo
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Abstract
The invention discloses a white-light LED (Light Emitting Diode) epitaxial wafer and a manufacturing process thereof, and a manufacturing method of a white-light LED chip. The white-light LED epitaxial wafer is provided with a GaN buffer layer on a sapphire substrate, and the buffer layer is sequentially provided with a green-light N-GaN contact layer, a green-light InGaN/GaN multiple quantum well light emitting layer, a green-light P-GaN contact layer, a blue-green-light cascade layer, a blue-light N-GaN contact layer, a blue-light InGaN/GaN multiple quantum well light emitting layer, a blue-light P-GaN contact layer, a red-blue-light cascade layer, a red-light N-GaP current expanding and ohmic contact layer, a red-light N-AlGaInP transition and lower limit layer, a red-light multiple quantum well AlGaInP light emitting layer, a red-light P-AlGaInP upper limit layer, a red-light P-GaP current expanding layer, a yellow-red-light cascade layer, a yellow-light N-Ga current expanding and ohmic contact layer, a yellow-light N-AlGaInP transition and lower limit layer, a yellow-light multiple quantum well AlGaInP light emitting layer, a yellow-light P-AlGaInP upper limit layer and a yellow-light P-GaP current expanding layer. The white-light LED epitaxial wafer disclosed by the invention gets rid of limitation of fluorescent powder and has excellent color rendering property.
Description
Technical field
The present invention relates to the photoelectron technology field, specifically, relate to a kind of white light LEDs epitaxial wafer and manufacture craft thereof of high-color rendering, and a kind of manufacture method of White-light LED chip.
Background technology
White light LEDs has green, energy-saving and environmental protection, reaction speed is fast, the life-span is long, can be operated in plurality of advantages such as fast state, is regarded as the rising star of green illumination light source.Light source is defined as color rendering to the colour developing ability of object, be through with the reference of colour temperature or reference light source (incandescent lamp etc.) comparison of the appearance color of object down.When in the light source light spectrum seldom or when lacking the main ripple that object reflected under reference light source, can make color produce tangible aberration, the aberration degree is big more, and light source is more to the color rendering of this look poor.Color rendering index is the common method that defines color rendering properties of light source at present.When color rendering index is that 100 markers Mingguang City source color renderings are the highest, it can correctly show the original color of material.
Three kinds of modes of main at present employing realize the LED white light: the three primary colors multicore sheet illuminated in combination synthesize white light that 1. passes through the LED RGB; Its advantage is that efficient is high, colour temperature is controlled, color rendering is better; Weak point is that three primary colors light decay difference causes colour temperature unstable, and the packaging and die bonding routing is comparatively complicated, and the required driving voltage of red, green, blue three primary colors chip is different; Need on each led chip, to add different drive current adjustment color and brightness, control circuit is complicated, cost is higher; 2. blue-light LED chip excites yellow fluorescent powder, and the green-yellow light that is sent by LED blue light and fluorescent material synthesizes white light; Can also add a small amount of red fluorescence powder therein or add an amount of green, red fluorescence powder simultaneously for improving color developing; 3. ultraviolet leds chip excitated fluorescent powder sends the three primary colors synthesize white light; Second kind with the third method in; All be to adopt the led chip excitated fluorescent powder to realize white light; Its weak point is for the control of fluorescent material consumption comparatively strict, and the fluorescent material consumption has deviation just can cause the color rendering of white light LEDs relatively poor slightly, and general colour rendering index is about 70; Color rendering index is low excessively, can not meet the demands.For example in the second method, adopt blue-light LED chip to excite yellow fluorescent powder, the control of yellow fluorescent powder accurate quantification is difficult; The yellow fluorescent powder consumption is more just can to cause photochromic inclined to one side Huang; The yellow fluorescent powder consumption is less just can to cause photochromic inclined to one side indigo plant, and promptly color rendering is poor, and color rendering index is not high.Though and color rendering is better in the first method, its color rendering index also is difficult to reach 90, also can only satisfy general user's demand, and cost is higher, and many occasions are all inapplicable.Therefore, the color developing that how to improve existing white light LEDs reduces production costs simultaneously and becomes the difficult problem that current LED industry is concerned about the most.
Summary of the invention
Technical problem to be solved by this invention is the technical problem that white light LEDs color rendering of the prior art is not high, production cost is high and then the white light LEDs epitaxial wafer and the White-light LED chip that provide that a kind of color rendering is good, produce in batches on the low line that is suitable for putting into production of good stability and cost.
For solving the problems of the technologies described above; The present invention provides a kind of white light LEDs epitaxial wafer; On Sapphire Substrate 1, form GaN resilient coating 2, on said GaN resilient coating 2, form green glow N-GaN contact layer 3, green glow InGaN/GaN multiple quantum well light emitting layer 4, green glow P-GaN contact layer 5, blue green light cascade layer 6, blue light N-GaN contact layer 7, blue light InGaN/GaN multiple quantum well light emitting layer 8, blue light P-GaN contact layer 9, red blue light cascade layer 10, ruddiness N-GaP current expansion and ohmic contact layer 11, ruddiness N-AlGaInP transition and lower limit layer 12, ruddiness MQW AlGaInP luminescent layer 13, ruddiness P-AlGaInP upper limiting layer 14, ruddiness P-GaP current extending 15, yellow ruddiness cascade layer 16, gold-tinted N-GaP current expansion and ohmic contact layer 17, gold-tinted N-AlGaInP transition and lower limit layer 18, gold-tinted MQW AlGaInP luminescent layer 19, gold-tinted P-AlGaInP upper limiting layer 20 and gold-tinted P-GaP current extending 21 successively.
The thickness of said green glow InGaN/GaN multiple quantum well light emitting layer 4 is that 1000nm～10000nm, wavelength are 530nm～540nm.
The thickness of said green glow InGaN/GaN multiple quantum well light emitting layer 4 is 1800nm.
The wavelength of said green glow InGaN/GaN multiple quantum well light emitting layer 4 is 535nm.
The thickness of said blue light InGaN/GaN multiple quantum well light emitting layer 8 is that 1000nm～10000nm, wavelength are 460nm～470nm.
The thickness of said blue light InGaN/GaN multiple quantum well light emitting layer 8 is 1900nm.
Said blue light InGaN/GaN multiple quantum well light emitting layer 8 wavelength are 465nm.
The thickness of said ruddiness MQW AlGaInP luminescent layer 13 is that 500nm～5000nm, wavelength are 620nm～635nm.
The thickness of said ruddiness MQW AlGaInP luminescent layer 13 is 900nm.
The wavelength of said ruddiness MQW AlGaInP luminescent layer 13 is 625nm.
The thickness of said gold-tinted MQW AlGaInP luminescent layer 19 is that 500nm～5000nm, wavelength are 585nm～595nm.
The thickness of said gold-tinted MQW AlGaInP luminescent layer 19 is 1000nm.
Said gold-tinted MQW AlGaInP luminescent layer 19 wavelength are 590nm.
The thickness of said ruddiness P-AlGaInP upper limiting layer 14 is 500nm～1000nm.
The thickness of said ruddiness N-AlGaInP transition and lower limit layer 12 is 500nm～1000nm.
The present invention also provides a kind of technology of making above-mentioned white light LEDs epitaxial wafer, comprises the steps:
I. growth green luminescence layer and blue light-emitting in epitaxial furnace comprise
1. Sapphire Substrate 1 is placed on and sends into epitaxial furnace in the pallet, the epitaxial furnace furnace temperature is set in 605～615 degrees centigrade of scopes, growing GaN resilient coating 2;
2. the epitaxial furnace furnace temperature is set in 1055～1065 degrees centigrade of scopes, growth green glow N-GaN contact layer 3;
3. the epitaxial furnace furnace temperature being set in 685～695 degrees centigrade of scopes, is carrier with nitrogen, growth green glow InGaN/GaN multiple quantum well light emitting layer 4;
4. the epitaxial furnace furnace temperature is set in 995～1005 degrees centigrade of scopes, growth green glow P-GaN contact layer 5;
5. the epitaxial furnace furnace temperature is set in 905～1005 degrees centigrade of scopes, growth blue green light cascade layer 6;
6. the epitaxial furnace furnace temperature is set in 1055～1065 degrees centigrade of scopes, growth blue light N-GaN contact layer 7;
7. the epitaxial furnace furnace temperature being set in 685～695 degrees centigrade of scopes, is carrier with nitrogen, growth blue light InGaN/GaN multiple quantum well light emitting layer 8;
8. the epitaxial furnace furnace temperature is set in 995～1005 degrees centigrade of scopes, growth blue light N-GaN contact layer 9;
II. continued growth red light luminescent layer and Yellow light emitting layer comprise
1. the epitaxial furnace furnace temperature is set in 680～700 degrees centigrade of scopes, the red blue light cascade layer 10 of growing;
2. the epitaxial furnace furnace temperature is set in 700～740 degrees centigrade of scopes, growth ruddiness N-GaP current expansion and ohmic contact layer 11;
3. utilize trimethyl gallium TMGa, trimethyl aluminium TMAl, trimethyl indium TMIn and phosphine PH3 on said GaP current expansion and ohmic contact layer 11, grow ruddiness N-AlGaInP transition and lower limit layer 12; Growth MQW MQWsAlGaInP active area on said ruddiness N-AlGaInP transition and lower limit layer 12, the trap of AlGaInP active area is built and is consisted of: trap (Al
xGa
1-x) InP/ builds (Al
yGa
1-y) InP, wherein 0≤x≤0.4,0.5≤y≤1.0; Growth thickness is the ruddiness P-AlGaInP upper limiting layer 14 of 0.5um～1.0um on said AlGaInP active area; Growth ruddiness P-GaP current extending 15 on said ruddiness P-AlGaInP upper limiting layer 14;
4. the epitaxial furnace furnace temperature is set in 680～700 degrees centigrade of scopes, the yellow ruddiness cascade layer 16 of growth on said ruddiness P-GaP current extending 15;
5. the epitaxial furnace furnace temperature is set in 700～740 degrees centigrade of scopes, the gold-tinted N-GaP current expansion of on said yellow ruddiness cascade layer 16, growing successively and ohmic contact layer 17, gold-tinted N-AlGaInP transition and lower limit layer 18, gold-tinted MQW AlGaInP luminescent layer 19, gold-tinted P-AlGaInP upper limiting layer 20 and gold-tinted P-GaP current extending 21;
Obtain the white light LEDs epitaxial wafer thus.
Said Step II is carried out in another epitaxial furnace.
The present invention also provides a kind of manufacture method of White-light LED chip, and said manufacture method adopts above-mentioned arbitrary described white light LEDs epitaxial wafer, comprises the steps:
I. said white light LEDs epitaxial wafer is processed as led chip;
II. the green glow N-GaN contact layer 3 of said led chip is provided with the N electrode, and gold-tinted P-GaP current extending 21 tops are provided with the P electrode.
Technique scheme of the present invention compared with prior art has following beneficial effect:
1. white light LEDs epitaxial wafer provided by the invention and manufacture craft thereof are that on same Sapphire Substrate, grow respectively green glow InGaN/GaN multiple quantum well light emitting layer, blue light InGaN/GaN multiple quantum well light emitting layer, ruddiness MQW AlGaInP luminescent layer and gold-tinted MQW AlGaInP luminescent layer obtains white light, and ruddiness MQW AlGaInP luminescent layer, green glow InGaN/GaN multiple quantum well light emitting layer, blue light InGaN/GaN multiple quantum well light emitting layer can directly produce the RGB white light; Be completely free of the constraint of fluorescent material; Improved luminous stability, and, remedied the defective of rgb light owing to the gold-tinted that adopts gold-tinted MQW AlGaInP luminescent layer to send; Greatly improved the color rendering index of white light; The applicant draws and utilizes this combination of the present invention, the white light of generation through a large amount of tests; Color rendering index can reach 95; Color rendering is good, and good stability has higher luminous mass.
The minimizing of White-light LED chip manufacture craft 2. of the present invention packaging process, extension, chip, the encapsulation of white light LEDs, the production technology of application whole industry chain are simplified, production efficiency is high, is suitable for producing in enormous quantities.
Description of drawings
Fig. 1 is the sketch map of white light LEDs epitaxial slice structure of the present invention;
Fig. 2 is a led chip manufacture craft flow chart of the present invention;
Fig. 3 is the sketch map of White-light LED chip structure of the present invention.
Wherein Reference numeral is: 1-substrate, 2-GaN resilient coating, 3-green glow N-GaN contact layer, 4-green glow InGaN/GaN multiple quantum well light emitting layer; 5-green glow P-GaN contact layer, 6-blue green light cascade layer, 7-blue light N-GaN contact layer, 8-blue light InGaN/GaN multiple quantum well light emitting layer; 9-blue light P-GaN contact layer, the red blue light cascade of 10-layer, 11-ruddiness N-GaP current expansion and ohmic contact layer; N-AlGaInP transition of 12-ruddiness and lower limit layer, 13-ruddiness MQW AlGaInP luminescent layer, 14-ruddiness P-AlGaInP upper limiting layer; 15-ruddiness P-GaP current extending, the yellow ruddiness cascade of 16-layer, 17-gold-tinted N-GaP current expansion and ohmic contact layer; N-AlGaInP transition of 18-gold-tinted and lower limit layer, 19-gold-tinted MQW AlGaInP luminescent layer, 20-gold-tinted P-AlGaInP upper limiting layer; 21-gold-tinted P-GaP current extending, 22-P electrode, 23-N electrode.
Embodiment
Embodiment 1
White light LEDs epitaxial wafer in the present embodiment; As shown in Figure 1; On Sapphire Substrate 1, form GaN resilient coating 2, on said GaN resilient coating 2, form green glow N-GaN contact layer 3, green glow InGaN/GaN multiple quantum well light emitting layer 4, green glow P-GaN contact layer 5, blue green light cascade layer 6, blue light N-GaN contact layer 7, blue light InGaN/GaN multiple quantum well light emitting layer 8, blue light P-GaN contact layer 9, red blue light cascade layer 10, ruddiness N-GaP current expansion and ohmic contact layer 11, ruddiness N-AlGaInP transition and lower limit layer 12, ruddiness MQW AlGaInP luminescent layer 13, ruddiness P-AlGaInP upper limiting layer 14, ruddiness P-GaP current extending 15, yellow ruddiness cascade layer 16, gold-tinted N-GaP current expansion and ohmic contact layer 17, gold-tinted N-AlGaInP transition and lower limit layer 18, gold-tinted MQW AlGaInP luminescent layer 19, gold-tinted P-AlGaInP upper limiting layer 20 and gold-tinted P-GaP current extending 21 successively.
Above-mentioned white light LEDs epitaxial wafer; The thickness of said green glow InGaN/GaN multiple quantum well light emitting layer 4 is that 1000nm～10000nm, wavelength are 530nm～540nm; Preferably; The thickness of said green glow InGaN/GaN multiple quantum well light emitting layer 4 is 1800nm, and the wavelength of said green glow InGaN/GaN multiple quantum well light emitting layer 4 is 535nm.As the mode that can implement; The thickness of said green glow InGaN/GaN multiple quantum well light emitting layer 4 can also be chosen as 1000nm, 1200nm, 1800nm, 2500nm, 3000nm, 4000nm, 5000nm and 10000nm or the like, as long as it is in the scope of 1000nm～10000nm; The wavelength of said green glow InGaN/GaN multiple quantum well light emitting layer 4 is for can also be chosen as 530nm, 533nm, 536nm, 538nm and 540nm etc., as long as it is in the scope of 530nm～540nm.
Above-mentioned white light LEDs epitaxial wafer, the thickness of said blue light InGaN/GaN multiple quantum well light emitting layer 8 are that 1000nm～10000nm, wavelength are 460nm～470nm.As preferred embodiment, the thickness of said blue light InGaN/GaN multiple quantum well light emitting layer 8 is 1900nm, and said blue light InGaN/GaN multiple quantum well light emitting layer 8 wavelength are 465nm.As the mode that can implement; The thickness of said blue light InGaN/GaN multiple quantum well light emitting layer 8 can also be chosen as 1000nm, 1200nm, 1800nm, 2500nm, 3000nm, 4000nm, 5000nm and 10000nm or the like, as long as it is in the scope of 1000nm～10000nm; Said blue light InGaN/GaN multiple quantum well light emitting layer 8 wavelength can also be 460nm, 462nm, 463nm, 466nm, 468nm and 470nm or the like, as long as it is in the scope of 460nm～470nm.
Above-mentioned white light LEDs epitaxial wafer, the thickness of said ruddiness MQW AlGaInP luminescent layer 13 are that 500nm～5000nm, wavelength are 620nm～635nm.The thickness of said ruddiness MQW AlGaInP luminescent layer 13 is 900nm.The wavelength of said ruddiness MQW AlGaInP luminescent layer 13 is 625nm.As preferred embodiment, the thickness of said ruddiness MQW AlGaInP luminescent layer 13 is 900nm, and said ruddiness MQW AlGaInP luminescent layer 13 wavelength are 625nm.As the mode that can implement, the thickness of said ruddiness MQW AlGaInP luminescent layer 13 can also be chosen as 500nm, 1500nm, 2500nm, 3200nm and 5000nm or the like, as long as its thickness is in 500nm～5000nm scope; Said ruddiness MQW AlGaInP luminescent layer 13 wavelength can also be 620nm, 622nm, 626nm, 628nm, 630nm, 632nm, 635nm etc., as long as it is in the scope of 620nm～635nm.
Above-mentioned white light LEDs epitaxial wafer, the thickness of said gold-tinted MQW AlGaInP luminescent layer 19 are that 500nm～5000nm, wavelength are 585nm～595nm.As preferred embodiment, the thickness of said gold-tinted MQW AlGaInP luminescent layer 19 is 1000nm, and said gold-tinted MQW AlGaInP luminescent layer 19 wavelength are 590nm.As the mode that can implement, the thickness of said gold-tinted MQW AlGaInP luminescent layer 19 can also be chosen as 500nm, 1500nm, 2500nm, 3200nm and 5000nm or the like, as long as its thickness is in 500nm～5000nm scope; Said gold-tinted MQW AlGaInP luminescent layer 19 wavelength can also be 585nm, 588nm, 591nm, 593nm, 595nm etc., as long as it is in 585nm～595nm scope.
Above-mentioned white light LEDs epitaxial wafer; The thickness of said ruddiness P-AlGaInP upper limiting layer 14 is 500nm～1000nm; As the mode that can implement, can be chosen as 500nm, 600nm, 750nm, 890nm, 950nm and 1000nm or the like, as long as it is in 500nm～1000nm scope.
Above-mentioned white light LEDs epitaxial wafer; The thickness of said ruddiness N-AlGaInP transition and lower limit layer 12 is 500nm～1000nm; As the mode that can implement; Can be chosen as 500nm, 600nm, 750nm, 890nm, 950nm and 1000nm or the like, as long as it is in 500nm～1000nm scope.
Present embodiment provides a kind of technology of making above-mentioned white light LEDs epitaxial wafer, comprises the steps:
I. growth green luminescence layer and blue light-emitting in epitaxial furnace, this step can be selected K465i MOCVD epitaxial furnace, and its growth course comprises the steps:
1. Sapphire Substrate 1 is placed on and sends into epitaxial furnace in the pallet, the epitaxial furnace furnace temperature is set in 605～615 degrees centigrade of scopes, growing GaN resilient coating 2; In the present embodiment, it is 610 degrees centigrade that this step is selected furnace temperature;
2. the epitaxial furnace furnace temperature is set in 1055～1065 degrees centigrade of scopes, growth green glow N-GaN contact layer 3; In the present embodiment, it is 1060 degrees centigrade that this step is selected furnace temperature;
3. the epitaxial furnace furnace temperature being set in 685～695 degrees centigrade of scopes, is carrier with nitrogen, growth green glow InGaN/GaN multiple quantum well light emitting layer 4; In the present embodiment, it is 690 degrees centigrade that this step is selected furnace temperature;
4. the epitaxial furnace furnace temperature is set in 995～1005 degrees centigrade of scopes, growth green glow P-GaN contact layer 5; In the present embodiment, it is 999 degrees centigrade that this step is selected furnace temperature;
5. the epitaxial furnace furnace temperature is set in 905～1005 degrees centigrade of scopes, growth blue green light cascade layer 6; In the present embodiment, it is 950 degrees centigrade that this step is selected furnace temperature;
6. the epitaxial furnace furnace temperature is set in 1055～1065 degrees centigrade of scopes, growth blue light N-GaN contact layer 7; In the present embodiment, it is 1060 degrees centigrade that this step is selected furnace temperature;
7. the epitaxial furnace furnace temperature being set in 685～695 degrees centigrade of scopes, is carrier with nitrogen, growth blue light InGaN/GaN multiple quantum well light emitting layer 8; In the present embodiment, it is 690 degrees centigrade that this step is selected furnace temperature;
8. the epitaxial furnace furnace temperature is set in 995～1005 degrees centigrade of scopes, growth blue light N-GaN contact layer 9; In the present embodiment, it is 999 degrees centigrade that this step is selected furnace temperature;
II. continued growth red light luminescent layer and Yellow light emitting layer in the present embodiment, are changed a new epitaxial furnace, for example select K465i MOCVD epitaxial furnace equally, comprise
1. the epitaxial furnace furnace temperature is set in 680～700 degrees centigrade of scopes, the red blue light cascade layer 10 of growing; In the present embodiment, it is 690 degrees centigrade that this step is selected furnace temperature;
2. the epitaxial furnace furnace temperature is set in 700～740 degrees centigrade of scopes, growth ruddiness N-GaP current expansion and ohmic contact layer 11; In the present embodiment, it is 725 degrees centigrade that this step is selected furnace temperature;
3. utilize trimethyl gallium TMGa, trimethyl aluminium TMAl, trimethyl indium TMIn and phosphine PH3 on said GaP current expansion and ohmic contact layer 11, grow ruddiness N-AlGaInP transition and lower limit layer 12; Growth MQW MQWsAlGaInP active area on said ruddiness N-AlGaInP transition and lower limit layer 12, the trap of AlGaInP active area is built and is consisted of: trap (Al
xGa
1-x) InP/ builds (Al
yGa
1-y) InP, wherein 0≤x≤0.4,0.5≤y≤1.0; Growth thickness is the ruddiness P-AlGaInP upper limiting layer 14 of 0.5um～1.0um on said AlGaInP active area; Growth ruddiness P-GaP current extending 15 on said ruddiness P-AlGaInP upper limiting layer 14;
4. the epitaxial furnace furnace temperature is set in 680～700 degrees centigrade of scopes, the yellow ruddiness cascade layer 16 of growth on said ruddiness P-GaP current extending 15; In the present embodiment, it is 690 degrees centigrade that this step is selected furnace temperature;
5. the epitaxial furnace furnace temperature is set in 700～740 degrees centigrade of scopes, the gold-tinted N-GaP current expansion of on said yellow ruddiness cascade layer 16, growing successively and ohmic contact layer 17, gold-tinted N-AlGaInP transition and lower limit layer 18, gold-tinted MQW AlGaInP luminescent layer 19, gold-tinted P-AlGaInP upper limiting layer 20 and gold-tinted P-GaP current extending 21; In the present embodiment, it is 725 degrees centigrade that this step is selected furnace temperature;
Can guarantee that through program setting each layer growth thickness satisfies above-mentioned thickness condition, obtains white light LEDs epitaxial wafer shown in Figure 1 thus.
Present embodiment provides a kind of manufacture method of White-light LED chip, and said manufacture method adopts above-mentioned white light LEDs epitaxial wafer, comprises the steps:
I. said white light LEDs epitaxial wafer is processed as led chip, its technological process is as shown in Figure 2:
White light LEDs epitaxial wafer → cleaning → plating transparent electrode layer → transparency electrode figure photoetching → corrode → remove photoresist → platform graphics photoetching → dry etching → remove photoresist → anneal → S
iO
2Deposition → graph window photoetching → S
iO
2Corrode → remove photoresist → N utmost point figure photoetching → prerinse → plated film → peel off → anneal → P utmost point figure photoetching → plated film → peel off → grind → cut → led chip;
The technological process of making led chip in this step is identical with the technological process of making chip of the prior art, and the white light LEDs epitaxial wafer of just selecting is the white light LEDs epitaxial wafer that provides in the present embodiment technique scheme.
II. the green glow N-GaN contact layer 3 of said led chip is provided with the N electrode, reaches gold-tinted P-GaP current extending 21 tops and is provided with the P electrode, obtains led chip shown in Figure 3.
Its white light color rendering index of led chip that adopts technique scheme of the present invention to obtain can reach 99.
Embodiment 2
The difference part of present embodiment and embodiment 1 is, makes the technology of above-mentioned white light LEDs epitaxial wafer in the present embodiment, comprises the steps:
I. growth green luminescence layer and blue light-emitting in epitaxial furnace, this step can be selected K465i MOCVD epitaxial furnace, and its growth course comprises the steps:
1. Sapphire Substrate 1 is placed on and sends into epitaxial furnace in the pallet, the epitaxial furnace furnace temperature is set in 605 degrees centigrade of scopes, growing GaN resilient coating 2;
2. the epitaxial furnace furnace temperature is set in 1055 degrees centigrade of scopes, growth green glow N-GaN contact layer 3;
3. the epitaxial furnace furnace temperature being set in 685 degrees centigrade of scopes, is carrier with nitrogen, growth green glow InGaN/GaN multiple quantum well light emitting layer 4;
4. the epitaxial furnace furnace temperature is set in 995 degrees centigrade of scopes, growth green glow P-GaN contact layer 5;
5. the epitaxial furnace furnace temperature is set in 905 degrees centigrade of scopes, growth blue green light cascade layer 6;
6. the epitaxial furnace furnace temperature is set in 1055 degrees centigrade of scopes, growth blue light N-GaN contact layer 7;
7. the epitaxial furnace furnace temperature being set in 685 degrees centigrade of scopes, is carrier with nitrogen, growth blue light InGaN/GaN multiple quantum well light emitting layer 8;
8. the epitaxial furnace furnace temperature is set in 995 degrees centigrade of scopes, growth blue light N-GaN contact layer 9;
II. change an epitaxial furnace, select K465i MOCVD epitaxial furnace equally, continued growth red light luminescent layer and Yellow light emitting layer comprise
1. the epitaxial furnace furnace temperature is set in 680 degrees centigrade of scopes, the red blue light cascade layer 10 of growing;
2. the epitaxial furnace furnace temperature is set in 700 degrees centigrade of scopes, growth ruddiness N-GaP current expansion and ohmic contact layer 11;
3. utilize trimethyl gallium TMGa, trimethyl aluminium TMAl, trimethyl indium TMIn and phosphine PH3 on said GaP current expansion and ohmic contact layer 11, grow ruddiness N-AlGaInP transition and lower limit layer 12; Growth MQW MQWsAlGaInP active area on said ruddiness N-AlGaInP transition and lower limit layer 12, the trap of AlGaInP active area is built and is consisted of: trap (Al
xGa
1-x) InP/ builds (Al
yGa
1-y) InP, wherein 0≤x≤0.4,0.5≤y≤1.0; Growth thickness is the ruddiness P-AlGaInP upper limiting layer 14 of 0.5um～1.0um on said AlGaInP active area; Growth ruddiness P-GaP current extending 15 on said ruddiness P-AlGaInP upper limiting layer 14;
4. the epitaxial furnace furnace temperature is set in 680 degrees centigrade of scopes, the yellow ruddiness cascade layer 16 of growth on said ruddiness P-GaP current extending 15;
5. the epitaxial furnace furnace temperature is set in 700 degrees centigrade of scopes, the gold-tinted N-GaP current expansion of on said yellow ruddiness cascade layer 16, growing successively and ohmic contact layer 17, gold-tinted N-AlGaInP transition and lower limit layer 18, gold-tinted MQW AlGaInP luminescent layer 19, gold-tinted P-AlGaInP upper limiting layer 20 and gold-tinted P-GaP current extending 21;
The white light color rendering index of the led chip that the above-mentioned technological process of employing present embodiment obtains can reach 96.
Embodiment 3
The difference part of present embodiment and embodiment 1 and embodiment 2 is,
I. growth green luminescence layer and blue light-emitting in epitaxial furnace, this step can be selected K465i MOCVD epitaxial furnace, and its growth course comprises the steps:
1. Sapphire Substrate 1 is placed on and sends into epitaxial furnace in the pallet, the epitaxial furnace furnace temperature is set in 615 degrees centigrade of scopes, growing GaN resilient coating 2;
2. the epitaxial furnace furnace temperature is set in 1065 degrees centigrade of scopes, growth green glow N-GaN contact layer 3;
3. the epitaxial furnace furnace temperature being set in 695 degrees centigrade of scopes, is carrier with nitrogen, growth green glow InGaN/GaN multiple quantum well light emitting layer 4;
4. the epitaxial furnace furnace temperature is set in 1005 degrees centigrade of scopes, growth green glow P-GaN contact layer 5;
5. the epitaxial furnace furnace temperature is set in 1005 degrees centigrade of scopes, growth blue green light cascade layer 6;
6. the epitaxial furnace furnace temperature is set in 1065 degrees centigrade of scopes, growth blue light N-GaN contact layer 7;
7. the epitaxial furnace furnace temperature being set in 695 degrees centigrade of scopes, is carrier with nitrogen, growth blue light InGaN/GaN multiple quantum well light emitting layer 8;
8. the epitaxial furnace furnace temperature is set in 1005 degrees centigrade of scopes, growth blue light N-GaN contact layer 9;
II. change an epitaxial furnace, select K465i MOCVD epitaxial furnace equally, continued growth red light luminescent layer and Yellow light emitting layer comprise
1. the epitaxial furnace furnace temperature is set in 700 degrees centigrade of scopes, the red blue light cascade layer 10 of growing;
2. the epitaxial furnace furnace temperature is set in 740 degrees centigrade of scopes, growth ruddiness N-GaP current expansion and ohmic contact layer 11;
3. utilize trimethyl gallium TMGa, trimethyl aluminium TMAl, trimethyl indium TMIn and phosphine PH3 on said GaP current expansion and ohmic contact layer 11, grow ruddiness N-AlGaInP transition and lower limit layer 12; Growth MQW MQWsAlGaInP active area on said ruddiness N-AlGaInP transition and lower limit layer 12, the trap of AlGaInP active area is built and is consisted of: trap (Al
xGa
1-x) InP/ builds (Al
yGa
1-y) InP, wherein 0≤x≤0.4,0.5≤y≤1.0; Growth thickness is the ruddiness P-AlGaInP upper limiting layer 14 of 0.5um～1.0um on said AlGaInP active area; Growth ruddiness P-GaP current extending 15 on said ruddiness P-AlGaInP upper limiting layer 14;
4. the epitaxial furnace furnace temperature is set in 700 degrees centigrade of scopes, the yellow ruddiness cascade layer 16 of growth on said ruddiness P-GaP current extending 15;
5. the epitaxial furnace furnace temperature is set in 740 degrees centigrade of scopes, the gold-tinted N-GaP current expansion of on said yellow ruddiness cascade layer 16, growing successively and ohmic contact layer 17, gold-tinted N-AlGaInP transition and lower limit layer 18, gold-tinted MQW AlGaInP luminescent layer 19, gold-tinted P-AlGaInP upper limiting layer 20 and gold-tinted P-GaP current extending 21;
Obtain white light LEDs epitaxial wafer shown in Figure 1 thus.
The white light color rendering index of the led chip that the above-mentioned technological process of employing present embodiment obtains can reach 97.
Obviously, the foregoing description only be for explanation clearly done for example, and be not qualification to execution mode.For the those of ordinary skill in affiliated field, on the basis of above-mentioned explanation, can also make other multi-form variation or change.Here need not also can't give exhaustive to all execution modes.And conspicuous variation of being extended out thus or change still are among the protection range of the invention.
Claims (18)
1. a white light LEDs epitaxial wafer forms GaN resilient coating (2) on Sapphire Substrate (1), it is characterized in that:
On said GaN resilient coating (2), form green glow N-GaN contact layer (3) successively; Green glow InGaN/GaN multiple quantum well light emitting layer (4); Green glow P-GaN contact layer (5); Blue green light cascade layer (6); Blue light N-GaN contact layer (7); Blue light InGaN/GaN multiple quantum well light emitting layer (8); Blue light P-GaN contact layer (9); Red blue light cascade layer (10); Ruddiness N-GaP current expansion and ohmic contact layer (11); Ruddiness N-AlGaInP transition and lower limit layer (12); Ruddiness MQW AlGaInP luminescent layer (13); Ruddiness P-AlGaInP upper limiting layer (14); Ruddiness P-GaP current extending (15); Yellow ruddiness cascade layer (16); Gold-tinted N-GaP current expansion and ohmic contact layer (17); Gold-tinted N-AlGaInP transition and lower limit layer (18); Gold-tinted MQW AlGaInP luminescent layer (19); Gold-tinted P-AlGaInP upper limiting layer (20) and gold-tinted P-GaP current extending (21).
2. white light LEDs epitaxial wafer according to claim 1 is characterized in that:
The thickness of said green glow InGaN/GaN multiple quantum well light emitting layer (4) is that 1000nm～10000nm, wavelength are 530nm～540nm.
3. white light LEDs epitaxial wafer according to claim 2 is characterized in that:
The thickness of said green glow InGaN/GaN multiple quantum well light emitting layer (4) is 1800nm.
4. according to claim 2 or 3 described white light LEDs epitaxial wafers, it is characterized in that:
The wavelength of said green glow InGaN/GaN multiple quantum well light emitting layer (4) is 535nm.
5. according to the arbitrary described white light LEDs epitaxial wafer of claim 1-4, it is characterized in that:
The thickness of said blue light InGaN/GaN multiple quantum well light emitting layer (8) is that 1000nm～10000nm, wavelength are 460nm～470nm.
6. white light LEDs epitaxial wafer according to claim 5 is characterized in that:
The thickness of said blue light InGaN/GaN multiple quantum well light emitting layer (8) is 1900nm.
7. according to claim 5 or 6 described white light LEDs epitaxial wafers, it is characterized in that:
Said blue light InGaN/GaN multiple quantum well light emitting layer (8) wavelength is 465nm.
8. according to the arbitrary described white light LEDs epitaxial wafer of claim 1-7, it is characterized in that:
The thickness of said ruddiness MQW AlGaInP luminescent layer (13) is that 500nm～5000nm, wavelength are 620nm～635nm.
9. white light LEDs epitaxial wafer according to claim 8 is characterized in that:
The thickness of said ruddiness MQW AlGaInP luminescent layer (13) is 900nm.
10. it is characterized in that according to Claim 8 or 9 described white light LEDs epitaxial wafers:
The wavelength of said ruddiness MQW AlGaInP luminescent layer (13) is 625nm.
11., it is characterized in that according to the arbitrary described white light LEDs epitaxial wafer of claim 1-10:
The thickness of said gold-tinted MQW AlGaInP luminescent layer (19) is that 500nm～5000nm, wavelength are 585nm～595nm.
12. white light LEDs epitaxial wafer according to claim 11 is characterized in that:
The thickness of said gold-tinted MQW AlGaInP luminescent layer (19) is 1000nm.
13., it is characterized in that according to claim 11 or 12 described white light LEDs epitaxial wafers:
Said gold-tinted MQW AlGaInP luminescent layer (19) wavelength is 590nm.
14., it is characterized in that according to the arbitrary described white light LEDs epitaxial wafer of claim 1-13:
The thickness of said ruddiness P-AlGaInP upper limiting layer (14) is 500nm～1000nm.
15., it is characterized in that according to the arbitrary described white light LEDs epitaxial wafer of claim 1-14:
The thickness of said ruddiness N-AlGaInP transition and lower limit layer (12) is 500nm～1000nm.
16. a technology of making the arbitrary described white light LEDs epitaxial wafer of claim 1-15 is characterized in that:
Comprise the steps:
I. growth green luminescence layer and blue light-emitting in epitaxial furnace comprise
1. Sapphire Substrate (1) is placed on and sends into epitaxial furnace in the pallet, the epitaxial furnace furnace temperature is set in 605～615 degrees centigrade of scopes, growing GaN resilient coating (2);
2. the epitaxial furnace furnace temperature is set in 1055～1065 degrees centigrade of scopes, growth green glow N-GaN contact layer (3);
3. the epitaxial furnace furnace temperature being set in 685～695 degrees centigrade of scopes, is carrier with nitrogen, growth green glow InGaN/GaN multiple quantum well light emitting layer (4);
4. the epitaxial furnace furnace temperature is set in 995～1005 degrees centigrade of scopes, growth green glow P-GaN contact layer (5);
5. the epitaxial furnace furnace temperature is set in 905～1005 degrees centigrade of scopes, growth blue green light cascade layer (6);
6. the epitaxial furnace furnace temperature is set in 1055～1065 degrees centigrade of scopes, growth blue light N-GaN contact layer (7);
7. the epitaxial furnace furnace temperature being set in 685～695 degrees centigrade of scopes, is carrier with nitrogen, growth blue light InGaN/GaN multiple quantum well light emitting layer (8);
8. the epitaxial furnace furnace temperature is set in 995～1005 degrees centigrade of scopes, growth blue light N-GaN contact layer (9);
II. continued growth red light luminescent layer and Yellow light emitting layer comprise
1. the epitaxial furnace furnace temperature is set in 680～700 degrees centigrade of scopes, the red blue light cascade layer (10) of growing;
2. the epitaxial furnace furnace temperature is set in 700～740 degrees centigrade of scopes, growth ruddiness N-GaP current expansion and ohmic contact layer (11);
3. utilize trimethyl gallium (TMGa), trimethyl aluminium (TMAl), trimethyl indium (TMIn) and phosphine (PH3) to go up growth ruddiness N-AlGaInP transition and lower limit layer (12) in said GaP current expansion and ohmic contact layer (11); Go up growth MQW (MQWs) AlGaInP active area in said ruddiness N-AlGaInP transition and lower limit layer (12), the trap of AlGaInP active area is built and is consisted of: trap (Al
xGa1
-x) InP/ builds (Al
yGa
1-y) InP, wherein 0≤x≤0.4,0.5≤y≤1.0; Growth thickness is the ruddiness P-AlGaInP upper limiting layer (14) of 0.5um～1.0um on said AlGaInP active area; Go up growth ruddiness P-GaP current extending (15) at said ruddiness P-AlGaInP upper limiting layer (14);
4. the epitaxial furnace furnace temperature is set in 680～700 degrees centigrade of scopes, goes up growth yellow ruddiness cascade layer (16) at said ruddiness P-GaP current extending (15);
5. the epitaxial furnace furnace temperature is set in 700～740 degrees centigrade of scopes, the gold-tinted N-GaP current expansion of on said yellow ruddiness cascade layer (16), growing successively and ohmic contact layer (17), gold-tinted N-AlGaInP transition and lower limit layer (18), gold-tinted MQW AlGaInP luminescent layer (19), gold-tinted P-AlGaInP upper limiting layer (20) and gold-tinted P-GaP current extending (21);
Obtain the white light LEDs epitaxial wafer thus.
17. the technology of white light LEDs epitaxial wafer according to claim 16 is characterized in that:
Said Step II is carried out in another epitaxial furnace.
18. the manufacture method of a White-light LED chip, said manufacture method adopts arbitrary described white light LEDs epitaxial wafer among the claim 1-15, it is characterized in that, comprises the steps:
I. said white light LEDs epitaxial wafer is processed as led chip;
II. the green glow N-GaN contact layer (3) of said led chip is provided with the N electrode, and gold-tinted P-GaP current extending (21) top is provided with the P electrode.
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