CN108389941A - It is aobvious to refer to adjustable unstressed configuration powder Single chip white light LED component and preparation method thereof - Google Patents
It is aobvious to refer to adjustable unstressed configuration powder Single chip white light LED component and preparation method thereof Download PDFInfo
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- 239000000843 powder Substances 0.000 title claims abstract description 50
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000002096 quantum dot Substances 0.000 claims abstract description 59
- 241000826860 Trapezium Species 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 16
- 230000026267 regulation of growth Effects 0.000 claims description 16
- 229910002704 AlGaN Inorganic materials 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 12
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- 238000010899 nucleation Methods 0.000 claims description 11
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- 229910052681 coesite Inorganic materials 0.000 claims description 7
- 229910052906 cristobalite Inorganic materials 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052682 stishovite Inorganic materials 0.000 claims description 7
- 229910052905 tridymite Inorganic materials 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 238000009877 rendering Methods 0.000 abstract description 13
- 230000008901 benefit Effects 0.000 abstract description 10
- 230000007547 defect Effects 0.000 abstract description 6
- 239000000463 material Substances 0.000 description 8
- 239000003086 colorant Substances 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- 230000005284 excitation Effects 0.000 description 6
- 230000006798 recombination Effects 0.000 description 6
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- 238000006243 chemical reaction Methods 0.000 description 5
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- 239000004065 semiconductor Substances 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
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- 238000005034 decoration Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
One kind is aobvious to refer to adjustable unstressed configuration powder Single chip white light LED component and preparation method thereof, which includes：Substrate；First epitaxial layer；The SiO of micro-/ nano hole with the arrangement of n array2Layer is located at the top of first epitaxial layer；The three-dimensional hexagonal trapezium structure of the n Quantum Well containing InGaN/GaN is located above each micro-/ nano hole；And quantum dot region, between each two three-dimensional hexagonal trapezium structure.Incorporating quantum trap and quantum dot of the present invention are formed by light emitting source, have not only been avoided that defect caused by fluorescent powder, but also Quantum Well can be made full use of to be combined possessed advantage with quantum dot, improve luminous efficiency.It can make the side-emitted blue light of obtained three-dimensional hexagonal trapezium structure by the component of In in quantum well, the green and/or yellow light of upper surface transmitting ratio blue light wavelength length, the proportioning for mixing quantum dot in gap also can be changed simultaneously, to adjust its emission wavelength and intensity, realize high-color rendering energy.
Description
Technical field
The present invention relates to semiconductor epitaxials and chip technology field, more particularly to a kind of aobvious adjustable unstressed configuration powder single of finger
Piece white light LED part and preparation method thereof.
Background technology
With the development of modern industry, a series of problem such as global energy crisis and atmosphere pollution becomes increasingly conspicuous.It shines
Diode (LED) is used as a kind of novel solid lighting source, because have the advantages such as small, specular removal, low power consumption, long-life by
To the attention of height.In recent years, it is exactly to excite single-matrix using low-voltage DC to obtain the most common method of white light LEDs
Semiconductor chip, the light that chip emission goes out are energized into again coated in the fluorescent powder on chip, so that fluorescent powder is sent out human eye visible
Long wavelength light, realize white light emission finally by the ratio for adjusting fluorescent powder.This method is broadly divided into two kinds：It is a kind of
To excite yellow fluorescent powder with blue chip, i.e., using blue-light LED chip as excitation light source, excitation and this kind of chip emission wavelength
Matched yellow fluorescent powder is combined the blue light of the yellow light launched and excitation light source to obtain white light；Another kind is with closely
UV chip excites red, green, blue three primary colors fluorescent powder, i.e., using near ultraviolet LED chip as excitation light source, excitation can be sent out
The light of three kinds of colors is carried out regulation and control combination and obtains white light by three kinds of fluorescent powders of red, green, blue three primary colours.However, this using glimmering
There is many defects, such as the energy loss caused by Stokes shift, the service life is opposite to be shortened the method for light conversion,
A series of problems, such as degradation of fluorescent powder, colour temperature is unstable, and colour rendering index is relatively low, and there are serious quenching luminescence phenomenons.In addition,
Also it is exactly the method for red-green-blue LED chip mixing, this method is although can be to avoid fluorescent powder in light transfer process
In intrinsic energy loss, but the mixed light process of RGB multi-chips is complicated, and needs different circuits and control system, and price is high
It is expensive, while colour temperature is also influenced by current fluctuation.
And it is then had the following advantages using unstressed configuration powder Single chip white light LED：Using the LED of one chip --- it avoids
The somewhat complex designs of more set control circuits, it is at low cost, while also avoiding the photochromic drift as caused by the different chip rates of decay
The problems such as shifting, and the heat problem of single-chip solid-state lighting product is greatly lowered relative to multi-chip type product；Using without glimmering
The LED of light powder --- it avoids the degradation of fluorescent powder, the problems such as colour temperature is unstable, and also has that colour rendering index is higher, the service life
The advantages such as relatively long.
Therefore, many researchers start the White-light LED illumination technology for putting forth effort to develop unstressed configuration powder single-chip, and propose
Many new practicable ways, as the multi-wavelength emission white light technology of Single-Chip Integration (uses epitaxy technology appropriate, grows not
With 3D or 2D structures prepare the LED of multi-wavelength emission) have been a great concern, but white light in these techniques is aobvious
Colour index is also relatively low, therefore, improves colour rendering index, keeps chromaticity coordinates also particularly urgent close to (1/3,1/3).
Invention content
(1) technical problems to be solved
The purpose of the present invention is to provide the adjustable unstressed configuration powder Single chip white light LED component of the aobvious finger of one kind and its preparation sides
Method, to solve at least one above-mentioned technical problem.
(2) technical solution
An aspect of of the present present invention provides a kind of aobvious adjustable unstressed configuration powder Single chip white light LED component of finger, including：
Substrate；
First epitaxial layer；
The SiO of micro-/ nano hole with the arrangement of n array2Layer is located above first epitaxial layer, and n is more than 1
Positive integer；
The three-dimensional hexagonal trapezium structure of the n Quantum Well containing InGaN/GaN is located above each micro-/ nano hole；And
Quantum dot region, between each two three-dimensional hexagonal trapezium structure；
Wherein, the InGaN/GaN Quantum Well forms light emitting source with the quantum dot region.
In some embodiments of the invention, In is adjustable component, the InGaN/ in the InGaN/GaN Quantum Well
The side-emitted blue light of GaN Quantum Well, upper table surface launching green light and/or yellow light.
In some embodiments of the invention, the quantum dot region is filled with the mixing quantum dot of proportion adjustable：It is red
Quantum dot and/or green quantum dot and/or yellow quantum dot.
In some embodiments of the invention, first epitaxial layer includes from bottom to top：
Low temperature nucleation layer, undoped GaN layer and the first n-type doping GaN layer.
In some embodiments of the invention, further include：The second N-type on the inside of the InGaN/GaN Quantum Well is mixed
Miscellaneous GaN layer, and the second epitaxial layer on the outside of the InGaN/GaN Quantum Well, the second epitaxial layer from-inner-to-outer packet
It includes：
AlGaN electronic barrier layers and p-type mix a layer GaN layer.
In some embodiments of the invention, the thickness of the low temperature nucleation layer is 5nm~200nm；
The thickness of the undoped GaN layer is 0.2 μm~10 μm；
The thickness of the first n-type doping GaN layer is 0.2 μm~10 μm；
The SiO2The thickness of layer is 40nm~600nm；
The thickness of the AlGaN electronic barrier layers is 10nm~250nm；
The thickness of the p-type GaN layer is 10nm~250nm.
Another aspect of the present invention additionally provides a kind of aobvious system for referring to adjustable unstressed configuration powder Single chip white light LED component
Preparation Method, including step：
One epitaxial layer of square growth regulation on substrate；
One layer of SiO is grown above first epitaxial layer2Layer, and in the SiO2Obtain what n array arranged on layer
Micro-/ nano hole；
The three-dimensional hexagonal trapezium structure of the n Quantum Well containing InGaN/GaN is grown, the three-dimensional hexagonal trapezium structure is located at each
Above micro-/ nano hole；And
The mixing quantum dot that proportion adjustable is filled between each two three-dimensional hexagonal trapezium structure, forms quantum dot region；
Wherein, the InGaN/GaN Quantum Well forms light emitting source with the quantum dot region.
In some embodiments of the invention, one epitaxial layer of growth regulation includes step：
Growing low temperature nucleating layer on substrate；
Undoped GaN layer is grown on the low temperature nucleation layer；And
The one n-type doping GaN layer of growth regulation in the undoped GaN layer.
In some embodiments of the invention, the mixing of proportion adjustable is filled between each two three-dimensional hexagonal trapezium structure
Further include step before quantum dot：The two n-type doping GaN layer of growth regulation on the inside of the InGaN/GaN Quantum Well, and in institute
State two epitaxial layer of growth regulation on the outside of InGaN/GaN Quantum Well.
In some embodiments of the invention, the second epitaxial layer from-inner-to-outer includes：
AlGaN electronic barrier layers and p-type mix a layer GaN layer.
(3) advantageous effect
The adjustable unstressed configuration powder Single chip white light LED component of aobvious finger and preparation method thereof of the present invention, compared to existing skill
Art has at least the following advantages：
1, incorporating quantum point and Quantum Well are formed by light emitting source, have not only been avoided that defect caused by fluorescent powder, but also can be with
Make full use of Quantum Well to be combined possessed advantage with quantum dot, that is, utilize exciton in the exciton and quantum dot in Quantum Well into
Row non-radiative recombination energy transfer improves luminous efficiency.
2, by adjusting the component of In in InGaN/GaN Quantum Well, the side of three-dimensional hexagonal trapezium structure can be made to send out
Penetrate blue light, and the green light (or green-yellow light or yellow light) of upper surface transmitting ratio blue light wavelength length, while also can be changed in gap
The proportioning of quantum dot (including red coloration quantum dot in mixing quantum dot) is mixed, the two combines, and obtains three primary colours, forms white light,
And its emission wavelength and intensity are can also adjust, and make it to obtain the aobvious structure for referring to adjustable unstressed configuration powder Single chip white light LED, it is real
Existing high-color rendering energy.
Description of the drawings
Fig. 1 is the sectional view of the adjustable unstressed configuration powder Single chip white light LED device structure of aobvious finger of the embodiment of the present invention.
Fig. 2 is the vertical view of the adjustable unstressed configuration powder Single chip white light LED device structure of aobvious finger of the embodiment of the present invention.
Fig. 3 is the step of the preparation method of the adjustable unstressed configuration powder Single chip white light LED component of aobvious finger of the embodiment of the present invention
Rapid schematic diagram.
Fig. 4 is the schematic diagram of the sub-step of the step S1 of the embodiment of the present invention.
Specific implementation mode
In recent years, since quantum dot (QDs) has, emission peak is controllable, color purity is high, color stability is high, high power effect
The advantage of the photoelectric properties of rate and long-life etc. and attract people's attention, applied as color transition material in particular by QDs
The application for overlaying on the white light LED part on InGaN light emitting diodes, has obtained remarkable progress.If using the QDs of nucleocapsid
Come substitute fluorescent powder be used as light conversion material then and can efficiently avoid it is low by the colour rendering index caused by conventional fluorescent powder
And there are some defects of serious quenching luminescence phenomenon etc., and have the QDs materials of nucleocapsid that there is very high quantum
Yield, such as CdSe/ZnS, optical range can cover entire visible light region, be that current most ripe and performance is best
Semiconductor-quantum-point material.In addition, research also found, the semiconductor-quantum-point by mixing different emission wavelengths can be used for adjusting
Save the performance parameter of white light LEDs, such as chromaticity coordinates, colour rendering index, correlated colour temperature.2007, Nizamoglu et al. was using green
Color, yellow and red QDs are coated on blue-ray LED as light conversion material and obtain white light LED part, and chromaticity coordinates is
(0.30,0.28), colour rendering index 40.9, colour temperature 7521K；2016, Cao into et al. it is also the same use green, yellow green with
And red QDs as light conversion material coated in white light LED part is obtained on blue-ray LED, performance is greatly improved,
Its peak efficiency is up to 31.691mW-1, and when electric current is within the scope of 20~200mA, chromaticity coordinates variation (0.3551,
0.3483)~(0.3234,0.3361), colour rendering index variation 77.6~84.2,4607~5920K of color temperature change is in just
In white light range.
White light LED part is generally made using blue light excitation yellow fluorescent powder in the prior art, easily causes the LED component service life
Short, the problems such as performance is unstable and colour rendering index is low.In view of this, incorporating quantum point of the present invention and Quantum Well are formed by hair
Light source had not only been avoided that defect caused by fluorescent powder, but also Quantum Well can be made full use of to be combined possessed advantage with quantum dot,
Non-radiative recombination energy transfer is carried out using the exciton in the exciton and quantum dot in Quantum Well, improves luminous efficiency；Pass through
The component of In can make the side-emitted blue light of obtained three-dimensional hexagonal trapezium structure in quantum well, and upper table surface launching
The green light (or green-yellow light or yellow light) longer than blue light wavelength, while mixing quantum dot (mixing quantum in gap also can be changed
In point include red coloration quantum dot) proportioning, the two combine, obtain three primary colours, and can also adjust its emission wavelength and intensity, make
Can obtain the aobvious structure for referring to adjustable unstressed configuration powder Single chip white light LED, realize high-color rendering energy.
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific embodiment, and reference
Attached drawing, the present invention is described in more detail.
The one side of the embodiment of the present invention provides a kind of aobvious adjustable unstressed configuration powder Single chip white light LED component of finger, figure
1 is the sectional view of the adjustable unstressed configuration powder Single chip white light LED device structure of aobvious finger of the embodiment of the present invention, as shown in Figure 1, should
Showing the adjustable unstressed configuration powder Single chip white light LED component of finger includes from bottom to top：Substrate 1, has n array at first epitaxial layer
The SiO of the micro-/ nano hole of arrangement2The three-dimensional hexagonal trapezium structure 4 and quantum dot of layer 3, n Quantum Well containing InGaN/GaN 42
Region 5.
Substrate 1 can be silicon and/or germanium material, sapphire and silicon carbide.In other embodiments, it can also be other
Material.
In order to improve the quality of the adjustable unstressed configuration powder Single chip white light LED component of aobvious finger of the invention, of the invention real
It applies in example, the first epitaxial layer is from bottom to top：Low temperature nucleation layer 21, undoped GaN layer 22 (u-GaN layers) and the first n-type doping
GaN layer 23 (n-GaN layers).
The thickness of low temperature nucleation layer 21 can be 5nm~200nm；The thickness of undoped GaN layer 22 can be 0.2 μm~10
μm；The thickness of first n-type doping GaN layer 23 can be 0.2 μm~10 μm.
The SiO of micro-/ nano hole with the arrangement of n array2Layer is located above first epitaxial layer, and thickness can
Think 40nm~600nm.
Fig. 2 is the vertical view of the adjustable unstressed configuration powder Single chip white light LED device structure of aobvious finger of the embodiment of the present invention, such as
Shown in Fig. 2, which includes the three-dimensional hexagonal trapezium structure 4 and quantum dot region 5 of Quantum Well containing InGaN/GaN 42.
The three-dimensional hexagonal trapezium structure 4 of n Quantum Well containing InGaN/GaN 42 is located at SiO2The top of layer, and positioned at described
On micro-/ nano hole.In is adjustable component, the side of the InGaN/GaN Quantum Well 42 in the InGaN/GaN Quantum Well 42
Surface launching blue light, upper table surface launching green light and/or yellow light, that is to say, that by adjusting In in the InGaN/GaN Quantum Well 42
Component can adjust the side of the InGaN/GaN Quantum Well 42 and the emission wavelength of upper surface and intensity.
Quantum dot region 5, between each two three-dimensional hexagonal trapezium structure 4.
Quantum dot region 5 is filled with the mixing quantum dot of proportion adjustable, wherein including centainly red quantum dot, optionally also
May include green quantum dot and yellow quantum dot, the aobvious adjustable unstressed configuration powder Single chip white light LED component of finger to modulation
Transmitting light it is photochromic.
Wherein, the InGaN/GaN Quantum Well 42 is formed by light emitting source with the quantum dot region 5, between the two
Exciton can carry out non-radiative recombination energy transfer, improve luminous efficiency, while can also stablize the performance of the LED component.Meanwhile
The blue light and InGaN/GaN Quantum Well 42 that the upper surface of light, InGaN/GaN Quantum Well 42 that quantum dot region 5 is sent out is launched
The green and/or yellow light that goes out of side-emitted can be used as three primary colours, be mixed to form white light, in addition, can also adjust its emission wavelength with
Intensity improves colour rendering index.
In some embodiments of the invention, in two n-type doping of inside growth regulation of the InGaN/GaN Quantum Well 42
GaN layer 41 (n-GaN layers), and in two epitaxial layer of outside growth regulation of the InGaN/GaN Quantum Well 42, second epitaxial layer
From-inner-to-outer includes successively：AlGaN electronic barrier layers 43 and p-type mix layer GaN layer 44 (p-GaN layer).
The thickness range of AlGaN electronic barrier layers 43 can be 10nm~250nm, and p-type mixes layer GaN layer 44 (p-GaN layer)
Thickness can be 10nm~250nm.
The another aspect of the embodiment of the present invention additionally provides a kind of aobvious adjustable unstressed configuration powder Single chip white light LED devices of finger
The preparation method of part, Fig. 3 are the preparation method of the adjustable unstressed configuration powder Single chip white light LED component of aobvious finger of the embodiment of the present invention
Step schematic diagram, as shown in figure 3, the preparation method includes the following steps：
S1, on substrate one epitaxial layer of square growth regulation.
Fig. 4 be the embodiment of the present invention step S1 sub-step schematic diagram, as shown in figure 4, step S1 may include with
Lower sub-step：
S101, on substrate growing low temperature nucleating layer, to improve the growth quality of subsequent GaN epitaxial film.One
In a little embodiments, substrate can be cleaned up, be put into metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy
(MBE) in system, temperature is increased between 400~850 DEG C, and pressure is adjusted between 100~600Torr, and growth 5nm~
The low temperature nucleation layer of 200nm.
S102, undoped GaN layer (u-GaN layers) is grown on the low temperature nucleation layer, to flatter subsequently to obtain
The surfaces GaN prepare.In some embodiments, temperature can be increased between 950~1100 DEG C, pressure reduction to 30~
Between 600Torr, 0.2 μm~10 μm of undoped GaN layer (u-GaN layers) is grown.
S103, (thickness can be 0.2 μm to one n-type doping GaN layer of growth regulation (n-GaN layers) in the undoped GaN layer
~10 μm), provide compound carrier, i.e. electronics for luminescent layer.
It should be noted that the first epitaxial layer, that is, low temperature nucleation layer, undoped GaN layer and the first n-type doping GaN layer can be with
All it is that epitaxial growth is carried out using metal organic chemical vapor deposition (MOVCD) or molecular beam epitaxy (MBE) method.
S2, one layer of SiO is grown above first epitaxial layer2Layer, and in the SiO2N array arrangement is obtained on layer
Micro-/ nano hole.
Specifically, in the first n-type doping GaN layer (n-GaN layers), one layer of SiO is first deposited2Layer, may then pass through light
The micro-/ nano hole of n array arrangement is formed, as subsequent mask plate at the methods of quarter, ICP pattern transfers.
The three-dimensional hexagonal trapezium structure of n S3, the growth Quantum Well containing InGaN/GaN, the three-dimensional hexagonal trapezium structure position
Above each micro-/ nano hole.
Specifically, in the SiO of the micro-/ nano hole arranged containing n array2On layer, one layer of three-dimensional hexagonal ladder is first grown
The second n-type doping GaN layer (n-GaN layers) of shape, then the AlGaN in InGaN/GaN Quantum Well and outside is grown from inside to outside
Electronic barrier layer and p-type mix a layer GaN layer (p-GaN layer), to form three-dimensional hexagonal trapezium structure.Wherein, InGaN/GaN quantum
The growth temperature of trap can be 600 DEG C~800 DEG C, and growth pressure can be 30Torr~600Torr.
S4, the mixing quantum dot that proportion adjustable is filled between each two three-dimensional hexagonal trapezium structure, form quantum dot region
Domain.
Wherein, the InGaN/GaN Quantum Well forms light emitting source with the quantum dot region.In three-dimensional hexagonal trapezium structure
Between, mixing quantum dot (red quantum dot and/or green quantum dot and/or the yellow amount of spin coating certain proportion (ratio is adjustable)
Sub- point), to form quantum dot region.Wherein it is preferred to carry out back carving on the three-dimensional hexagonal trapezium structure, make quantum dot
Region and the upper plane of three-dimensional hexagonal trapezium structure are in the same plane, and are made with facilitating.
In some embodiments of the invention, it can also include before step S 4 step S31：In the InGaN/
The two n-type doping GaN layer of inside growth regulation (n-GaN layers) of GaN Quantum Well；And step S32：In the InGaN/GaN quantum
Two epitaxial layer of outside growth regulation of trap.
Wherein, which includes successively：AlGaN electronic barrier layers and p-type mix a layer GaN layer (p-GaN
Layer).Growth AlGaN electronic barrier layers are to improve rate of radiative recombination in order to which more carriers are limited in active area, that is, improve
Internal quantum efficiency；Growing P-type doped gan layer (p-GaN layer) is to provide compound carrier, i.e. hole for luminescent layer.That is,
The three-dimensional hexagonal trapezium structure includes the second n-type doping GaN layer (n-GaN layers), InGaN/GaN quantum successively from inside to outside
Trap, AlGaN electronic barrier layers and p-type mix a layer GaN layer (p-GaN layer).
The growing method of second epitaxial layer can be similar with the growing method of the first epitaxial layer.Wherein, AlGaN electronic blockings
Layer growth temperature can be 900~1050 DEG C, growth pressure can be 50~600Torr, thickness can be 10nm~
250nm；P-type mix a layer GaN layer (p-GaN layer) growth temperature can be 800~1000 DEG C, growth pressure can be 50~
600Torr, thickness can be 10nm~250nm.
The quantum dot region that the InGaN/GaN Quantum Well and step S4 obtained in step S3 obtains is main light emitting source,
And the exciton in the exciton and quantum dot in Quantum Well can carry out non-radiative recombination energy transfer, improve luminous efficiency.
To sum up, the present invention is formed by light emitting source by incorporating quantum point and Quantum Well, has both been avoided that fluorescent powder is brought
Defect, and Quantum Well can be made full use of to be combined possessed advantage with quantum dot, that is, utilize exciton and amount in Quantum Well
Exciton in son point carries out non-radiative recombination energy transfer, improves luminous efficiency；It can be with by the component of In in quantum well
Make the side-emitted blue light of obtained three-dimensional hexagonal trapezium structure, and upper surface transmitting ratio blue light wavelength length green light (or
Green-yellow light or yellow light), while mixing quantum dot in gap (including red coloration quantum dot in mixing quantum dot) also can be changed
Proportioning, the two combine, and obtain three primary colours, and can also adjust its emission wavelength and intensity, make it to obtain it is aobvious refer to it is adjustable without glimmering
The structure of light powder Single chip white light LED realizes high-color rendering energy, and this aobvious adjustable unstressed configuration powder Single chip white light LED junction of finger
The preparation method of structure is simple, is easy to make on a large scale.
It unless there are known entitled phase otherwise anticipates, the numerical parameter in this specification and appended claims is approximation, energy
Enough required characteristic changings obtained by content through the invention.Specifically, all be used in specification and claim
The number of the middle content for indicating composition, reaction condition etc., it is thus understood that repaiied by the term of " about " in all situations
Decorations.Under normal circumstances, the meaning expressed refers to including by specific quantity ± 10% variation in some embodiments, at some
± 5% variation in embodiment, ± 1% variation in some embodiments, in some embodiments ± 0.5% variation.
Furthermore "comprising" does not exclude the presence of element or step not listed in the claims." one " before element
Or "one" does not exclude the presence of multiple such elements.
The word of specification and ordinal number such as " first ", " second ", " third " etc. used in claim, with modification
Corresponding element, itself is not meant to that the element has any ordinal number, does not also represent the suitable of a certain element and another element
Sequence in sequence or manufacturing method, the use of those ordinal numbers are only used for enabling the element with certain name and another tool
There is the element of identical name that can make clear differentiation.
Particular embodiments described above has carried out further in detail the purpose of the present invention, technical solution and advantageous effect
It describes in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in the guarantor of the present invention
Within the scope of shield.
Claims (10)
1. the aobvious adjustable unstressed configuration powder Single chip white light LED component of finger of one kind, including：
Substrate；
First epitaxial layer；
The SiO of micro-/ nano hole with the arrangement of n array2Layer is located above first epitaxial layer, and n is just whole more than 1
Number；
The three-dimensional hexagonal trapezium structure of the n Quantum Well containing InGaN/GaN is located above each micro-/ nano hole；And
Quantum dot region, between each two three-dimensional hexagonal trapezium structure；
Wherein, the InGaN/GaN Quantum Well forms light emitting source with the quantum dot region.
2. the aobvious adjustable unstressed configuration powder Single chip white light LED component of finger according to claim 1, wherein the InGaN/
In GaN Quantum Well In be adjustable component, the side-emitted blue light of the InGaN/GaN Quantum Well, upper table surface launching green light and/or
Yellow light.
3. the aobvious adjustable unstressed configuration powder Single chip white light LED component of finger according to claim 1 or 2, wherein the quantum
Point area filling has the mixing quantum dot of proportion adjustable：Red quantum dot and/or green quantum dot and/or yellow quantum dot.
4. the aobvious adjustable unstressed configuration powder Single chip white light LED component of finger according to claim 3, wherein outside described first
Prolonging layer includes from bottom to top：
Low temperature nucleation layer, undoped GaN layer and the first n-type doping GaN layer.
5. the aobvious adjustable unstressed configuration powder Single chip white light LED component of finger according to claim 4, wherein further include：It is located at
The second n-type doping GaN layer on the inside of the InGaN/GaN Quantum Well, and on the outside of the InGaN/GaN Quantum Well
Two epitaxial layers, the second epitaxial layer from-inner-to-outer include：
AlGaN electronic barrier layers and p-type mix a layer GaN layer.
6. the aobvious adjustable unstressed configuration powder Single chip white light LED component of finger according to claim 5, wherein：
The thickness of the low temperature nucleation layer is 5nm~200nm；
The thickness of the undoped GaN layer is 0.2 μm~10 μm；
The thickness of the first n-type doping GaN layer is 0.2 μm~10 μm；
The SiO2The thickness of layer is 40nm~600nm；
The thickness of the AlGaN electronic barrier layers is 10nm~250nm；
The thickness of the p-type GaN layer is 10nm~250nm.
7. a kind of aobvious preparation method for referring to adjustable unstressed configuration powder Single chip white light LED component, including step：
One epitaxial layer of square growth regulation on substrate；
One layer of SiO is grown above first epitaxial layer2Layer, and in the SiO2Obtained on layer the arrangement of n array it is micro-/receive
Metre hole hole；
Grow the three-dimensional hexagonal trapezium structure of the n Quantum Well containing InGaN/GaN, the three-dimensional hexagonal trapezium structure be located at it is each it is micro-/
Above nano aperture；And
The mixing quantum dot that proportion adjustable is filled between each two three-dimensional hexagonal trapezium structure, forms quantum dot region；
Wherein, the InGaN/GaN Quantum Well forms light emitting source with the quantum dot region.
8. according to the method described in claim 7, wherein, one epitaxial layer of growth regulation includes step：
Growing low temperature nucleating layer on substrate；
Undoped GaN layer is grown on the low temperature nucleation layer；And
The one n-type doping GaN layer of growth regulation in the undoped GaN layer.
9. according to the method described in claim 7, wherein, proportion adjustable is filled between each two three-dimensional hexagonal trapezium structure
Further include step before mixing quantum dot：The two n-type doping GaN layer of growth regulation on the inside of the InGaN/GaN Quantum Well；And
Two epitaxial layer of growth regulation on the outside of the InGaN/GaN Quantum Well.
10. according to the method described in claim 9, wherein, the second epitaxial layer from-inner-to-outer includes：
A1GaN electronic barrier layers and p-type mix a layer GaN layer.
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| CN116093216A (en) * | 2023-02-20 | 2023-05-09 | 江苏第三代半导体研究院有限公司 | Epitaxial structure, preparation method thereof and bicolor LED device |
| CN116093216B (en) * | 2023-02-20 | 2024-07-30 | 江苏第三代半导体研究院有限公司 | Epitaxial structure, preparation method thereof and bicolor LED device |
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Application publication date: 20180810 |