CN102412363A - Wafer level packaging structure for light-emitting diode (LED) lamp, and manufacturing method for wafer level packaging structure - Google Patents
Wafer level packaging structure for light-emitting diode (LED) lamp, and manufacturing method for wafer level packaging structure Download PDFInfo
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- CN102412363A CN102412363A CN2011103097236A CN201110309723A CN102412363A CN 102412363 A CN102412363 A CN 102412363A CN 2011103097236 A CN2011103097236 A CN 2011103097236A CN 201110309723 A CN201110309723 A CN 201110309723A CN 102412363 A CN102412363 A CN 102412363A
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Abstract
The invention provides a wafer level packaging structure for a light-emitting diode (LED) lamp, and a manufacturing method for the wafer level packaging structure. The structure comprises a lamp case, a high-reflection aluminum layer, an uncut LED wafer, a LED chip and a secondary optical lens and is characterized in that: fluorescence glue is coated on the bottom of the inner side of the secondary optical lens; the upper part is provided with an LED chip; the uncut LED wafer is distributed on the LED chip; the high-reflection aluminum layer is distributed on the LED wafer; and the top and the bottom are wrapped by the lamp case.
Description
Technical field
The present invention relates to the radiating treatment technology of optical crystal, more specifically, relate to wafer level packaging structure of a kind of LED light fixture and preparation method thereof.
Background technology
The heat dissipation problem of LED is more and more received people's attention now, and this is that the bad junction temperature of dispelling the heat is just high because the light decay of LED is directly relevant with its junction temperature with the life-span, and the life-span is just short.According to A Leiniusi rule, 10 ℃ of the every reductions of temperature, the life-span can prolong 2 times.Can know that from the light decay of Cree company issue and the relation of junction temperature if junction temperature can be controlled at 65 ℃, the life-span of its light decay to 70% can be up to 100,000 hours.But the heat radiation of actual LED lamp greatly differs from each other with this requirement now, makes the life-span of LED light fixture become a subject matter that influences its performance.
If junction temperature is that 25 luminous when spending are 100%, junction temperature rises to 60 when spending so, and its luminous quantity just has only 90%, and junction temperature is 100 just to drop to 80%, 140 degree when spending and just have only 70%, visiblely improves heat radiation, and the control junction temperature is crucial thing.In addition, the heating of LED can make that also its spectrum moves.Colour temperature raises, and forward current increases (during the constant voltage power supply), and reverse current also increases, and thermal stress increases, and fluorescent material epoxy resin is aging to quicken.
Usually integrate a plurality of LED crystal grain at present, obtain high-power LED, the power of this LED can reach more than the 5W.In order to link together a plurality of LED crystal grain (with eutectic (Eutectic) or cover crystalline substance (Flip-Chip) encapsulation), need to adopt accurate printed circuit to connect.In order to obtain better heat dissipation characteristics, adopt ceramic substrate usually, this ceramic substrate is to be made up of aluminium oxide and aluminium nitride.
After LED processed light fixture, the heat that led chip produced always loose in air through the shell of light fixture.Because the thermal capacity of led chip is very little, if it is bad to dispel the heat, little by little the accumulation of heat will make the junction temperature of chip improve rapidly, if be operated in the state of high junction temperature over a long time, its life-span will shorten very soon.Yet these heats are wanted really to be guided out chip, arrive extraneous air, pass through a lot of approach.Specifically, the heat that led chip produced is come out from its heat dissipation metal piece, through the PCB of scolder to aluminium base, just arrives aluminium radiator through heat-conducting glue more earlier.
Summary of the invention
For overcoming above-mentioned heat radiation and luminous existing defective, the present invention proposes wafer level packaging structure of a kind of LED light fixture and preparation method thereof.
According to an aspect of the present invention, propose a kind of wafer level packaging structure of LED light fixture, having comprised: lamp housing, high reflective aluminum, do not cut LED wafer, led chip and secondary optical lens; It is characterized in that; The secondary optical lens inside bottom is clicked and entered fluorescent glue, and top is led chip, arranges on the led chip and does not cut the LED wafer; Arrange high reflective aluminum on the LED wafer, top and sidepiece coat lamp housing.
According to a further aspect in the invention, proposed a kind of preparation method of this encapsulating structure of wafer scale of LED light fixture, having comprised: step 1, according to the optical characteristics of led chip, the optical parametric of secondary optical lens is obtained in emulation, and carries out the optical grade die and make; Step 2 prepares secondary optical lens, and fluorescent glue is clicked and entered the lens inboard through point gum machine; Step 3 is obtained and is not cut the LED wafer, to not cutting the laser pulse vapor deposition that the LED wafer rear carries out high reflective aluminum; Step 4 has some the secondary optical lens of fluorescent glue to combine with the not cutting LED wafer that is coated with high reflective aluminum, and be connected with power module, accomplish wafer-level packaging.
The present invention utilizes uncut LED wafer directly to assemble with various secondary optical lens, and carries out high efficiency and heat radiation in wafer rear and handle, and wafer is directly contacted with lamp housing, and the raising radiating efficiency also reduces the heat radiation cost of LED light fixture.
Description of drawings
Fig. 1 is the generalized section of the wafer level packaging structure of LED light fixture;
Fig. 2 is the common cathode sketch map of the LED wafer of anode altogether;
Fig. 3 is the sketch map of secondary optical lens;
Fig. 4 is that the integral body of secondary optical lens prepares sketch map;
Fig. 5 is the preparation process sketch map that does not cut the LED wafer.
As shown in the figure; In order clearly to realize the structure of embodiments of the invention, marked specific structure and device in the drawings, but this is merely the signal needs; Be not that intention is limited to the present invention in this ad hoc structure, device and the environment; According to concrete needs, those of ordinary skill in the art can adjust these devices and environment or revise, and adjustment of being carried out or modification still are included in the scope of accompanying Claim.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment wafer level packaging structure of a kind of LED light fixture provided by the invention and preparation method thereof is described in detail.
Wherein, in the following description, with description a plurality of different aspects of the present invention, yet, for the one of ordinary skilled in the art, can only utilize perhaps entire infrastructure more of the present invention or flow process to come embodiment of the present invention.For the definition of explaining, specific number, configuration and order have been set forth, but clearly, in that do not have also can embodiment of the present invention under the situation of these specific detail.In other cases, in order not obscure the present invention, will set forth no longer in detail for some well-known characteristics.
The present invention adopts uncut LED wafer; And led chip takes common cathode to be total to the mode of anode and the both positive and negative polarity of power supply is connected; Wafer adopts the sapphire substrate of diameter 1-4 inch, and substrate back deposits high reflective aluminum film in case leak-stopping light with manufacture of semiconductor.Through point gum machine fluorescent glue is clicked and entered in the secondary optical lens, the warp baking is solidified fluorescent glue again, sticks together with the LED wafer to engage again, and accomplishes the making of LED light emitting module.Lamp housing through having a heat radiation coating with the surface is close to assembling, accomplishes the wafer level packaging structure of LED light fixture.
According to this technological invention; A kind of wafer level packaging structure of LED light fixture is provided; As shown in Figure 1, the mode of making the LED light fixture with LED wafer collocation secondary optical lens constitutes, and its structure comprises: lamp housing, high reflective aluminum, do not cut LED wafer, led chip and secondary optical lens.The secondary optical lens inside bottom is clicked and entered fluorescent glue, and top is led chip, arranges on the led chip and does not cut the LED wafer, arranges high reflective aluminum on the LED wafer, and top and sidepiece coat lamp housing.
Wherein, lamp housing can be aluminium, high thermal conductivity coefficient plastics, ceramic-metal composites or polymer ceramic composite material, and its thickness is the 0.1-1.0 millimeter, and lamp housing is outer can be coated with far infrared radiation nanometer heat radiation coating, and paint thickness is the 10-50 micron.
Wherein, the thickness of high reflective aluminum film is the 1-100 nanometer, also can use nano-titanium dioxide film, and its thickness is the 1-100 nanometer.
Wherein, The thickness that does not cut the LED wafer is the 200-500 micron, and alternative material is sapphire (Sapphire), diamond (Diamond), carborundum (Silicon carbide), gallium nitride (GalliumNitride) or silicon nitride (Silicon Nitride) etc.The thickness of led chip can be the 500-1000 micron.Do not cut LED crystal column surface growth one deck gallium nitride film.
Wherein, The thickness of secondary optical lens is the 0.05-0.3 millimeter; Its lens height is 1-10 centimetre; Materials used is Merlon (Poly carbonate), acrylic (Poly methyl methacrylate), liquid glass (Liquid state glass) or graft type high temperature transparent polymer (for example, polyimides-gather methyl propionyl acid methyl esters-silicone) etc.The inner fluorescent glue that injects of secondary optical lens; The thickness of fluorescent glue is the 0.05-0.3 millimeter, and the proportioning of the employed material of fluorescent glue can be the bloom first: bloom second: bloom third: rouge and powder first: rouge and powder second: green meal beetle: green powder second: nano-glass first: nano-glass second=(0.1-3.0): (0.1-3.0): (0.1-3.0): (0.05-0.1): (0.05-0.1): (0.03-0.2): (0.03-0.2): (0.2-2.0): (0.2-2.0).
Wherein, high reflective aluminum is plated in the back side of wafer, realizes through high thermal conductivity coefficient adhesive, ultrasonic waves eutectic or pulse laser welding.
Wherein, Fig. 2 illustrates the common cathode sketch map of the LED wafer of anode altogether, and as shown in Figure 2, this LED wafer does not cut, and the mode that led chip takes common cathode to be total to anode links to each other with supply module.
Wherein, Fig. 3 illustrates, secondary optical lens and cutting crystal wafer not be connected sketch map, wherein, fluorescent glue is clicked and entered the secondary optical lens inside bottom with point gum machine, and with uncut LED wafer with mechanical mechanism mode fluid-tight engagement.
In another embodiment of the present invention, a kind of preparation method of this encapsulating structure is provided, wherein, this method comprises: step 1, and according to the optical characteristics of led chip, the optical parametric of secondary optical lens is obtained in emulation, and carries out the optical grade die and make; Step 2 prepares secondary optical lens, and fluorescent glue is clicked and entered the lens inboard through point gum machine; Step 3 is obtained and is not cut the LED wafer, to not cutting the laser pulse vapor deposition that the LED wafer rear carries out high reflective aluminum; Step 4 has some the secondary optical lens of fluorescent glue to combine with the not cutting LED wafer that is coated with high reflective aluminum, and be connected with power module, accomplish wafer-level packaging.
Particularly, in the step 1, according to the optical characteristics of led chip, the optical parametric of secondary optical lens is obtained in emulation, and carries out the optical grade die and make.Wherein, Earlier with the optical characteristics of optics simulation software (Opticalsimulation software) to blue light laser diode chip or blue light diode chip; As half-value angle, power, light type (batswing tab: Bat wing etc.) reflectivity, refractive index, the proportion of goods damageds, the light transmittance of collocation glass, plastics or LED wafer, carry out comprehensive simulating; Obtain the optical parametric of the secondary optical lens that is fit to current use glass or plastics material, relevant parameter such as curvature, thickness, highly, optical parametrics such as light transmittance, reflectivity, refractive index and birefringence.
According to the optics simulation result, carry out the optical grade die and make afterwards.Wherein, carry out the cutting of die (Mold insert) profile with Digit Control Machine Tool earlier, and after grind, polish (Polishing).Wherein, Earlier cerium oxide abrasive slurry (Slurry) is poured on the abrasive disk of cmp (Chemical Mechanical Polishing) equipment; Die is placed on the abrasive disk, and adjustment equipment integral levelness reaches 95-100, and the adjustment relative rotation speed is 1000-20000rpm; The abrasive disk temperature is set at 20-120 ℃, and milling time can be 1-10 minute.
Change grinding pad afterwards; The diamond polishing fluid is poured on the abrasive disk of chemical-mechanical grinding device, adjustment equipment integral levelness reaches 98-100 again, and the adjustment relative rotation speed is 5000-10000rpm; The abrasive disk temperature is set to 50-150 ℃, and milling time can be 1-10 minute.Clean with pure water afterwards, pure water temperature is set at 20-100 ℃, and the time can be 1-10 minute.Toast afterwards and dewater, temperature is set at 90-150 ℃; Time can be 30-120 minute.
Afterwards, with steel mesh wire mark mode eurymeric photoresist (Positive photo resist) is printed to the die surface, eurymeric photoresist thickness is the 0.001-0.01 millimeter.Through preceding baking journey (Pre-bakingprooess), this process parameter is again: temperature is set at 80-120 ℃, and the time can be 10-50 minute.Mask blank (Photo-mask) with quartzy (Quartz) chromium plating places ultraviolet photoetching system (Ultraviolet exposure system) to carry out exposure manufacture process (Exposure process) again, and the time is 1-80 second; Energy is thousand joule of 100-200.Carry out developing manufacture process (Development process) afterwards again, with the exposure after die be soaked in the sodium hydrate aqueous solution that weight percent concentration is 3-10 (3-10wt%) (NaOH) (aq) in, solution temperature is 50-80 ℃, soak time is 1-10 minute.Clean with pure water afterwards, temperature 20-100 ℃, time 1-10 minute.Toast afterwards and dewater and back baking journey, temperature is set at 90-150 ℃, and the time can be 30-120 minute, with plasma etching (Plasma etching) etching is carried out on the die surface again, and vacuum degree is the 0.001-0.000001 millimetres of mercury; Time is 1-10 minute; Using gases is argon gas (purity is 99.999%).
Treat that etch process finishes, carry out stripping processing procedure (Stripping process), the die after the etching is soaked in the sodium hydrate aqueous solution that weight percent concentration is 5-10 (5-10wt%) (NaOH) (aq); Temperature is 70-100 ℃; Time is 3-15 minute.Clean with pure water afterwards, temperature is set at 20-100 ℃) time can be 1-10 minute), toast afterwards and dewater that (temperature is set at 90-150 ℃; Time can be 30-120 minute).
For reducing the surface roughness (Surface roughness) of die pattern (Patterned), need carry out electrobrightening processing procedure (Electrolytic polishing) afterwards, die is inserted in the electrobrightening groove, polishing fluid is chloride electrolyte (like a sodium chloride etc.); Temperature is 50-150 ℃; Time can be 30-180 minute; Concentration is 0.01-10wt%.Clean with pure water more afterwards, temperature is set at 20-100 ℃; Time can be 1-10 minute, toasts afterwards to dewater, and temperature is set at 90-150 ℃; Time can be 30-120 minute, accomplishes high-precision optical grade die and makes.
Afterwards; High-precision optical level die that completes and die holder (Mold base) are organized upright (Assembly); With optical grade compression molding mould (Injection compression mold); Be loaded on the electric injection molding machine (Electro dynamic injection molding), optical grade polycarbonate (PC) or acryl (PMMA) or other transparent optical materials are carried out removal process, temperature is 40-80 ℃; Time is 8-12 hour, and electric injection molding machine is preheated to 100-300 ℃.Adjusting each process parameter, is 100-300 ℃ like temperature, and the time is 1-30 second, and speed is the 100-200 cel, and pressure is 200-300 unit, and the time of staying is 5-15 second in the product mould, and the mould temperature is 80-150 ℃.Glass or plastics secondary optical lens need carry out annealing in process (Annealing process) to eliminate the internal stress of lens module after the demoulding; Glass or plastics secondary optical lens lens are inserted in the vacuum oven with temperature 70-150 ℃; Time 10-240 minute, accomplish the making of high-accuracy glass or plastics secondary optical lens lens.
As shown in Figure 4, wherein, in the step 2, prepare secondary optical lens, and fluorescent glue is clicked and entered the lens inboard with point gum machine.Wherein, With the fluorescent material and the transparent enclosure glue (high index of refraction) of different proportionings of configuration voluntarily; Click and enter the lens inboard with point gum machine, proportioning as follows (A glue: B glue: bloom: rouge and powder: green powder: blue powder=＞(1-2.5): (1-2.5): (0.1-2.5): (0.01-2.5): (0.02-2.5): (0.03-2.5)), more than be weight ratio. behind colour temperature adjustment correction program; Carry out the baking program, temperature is set at 100-200 ℃; Time can be 30-90 minute, so can accomplish the integral manufacturing of secondary optical lens.Fluorescent glue can also be the proportioning of previous embodiment.
As shown in Figure 5, in the step 3, obtain and do not cut the LED wafer, not cut the laser pulse vapor deposition that the LED wafer rear carries out high reflective aluminum.On sapphire substrate (Sapphire substrate); With organic metal vapour deposition (Metal Organic Chemical Vapor Deposition) long one deck gallium nitride film (GaN thin film); Afterwards with substrate attenuation to the 200-300 micron; And the thickness of former sapphire substrate is the 430-480 micron, and the silica membrane of growing up afterwards is again with etching solution (sulfuric acid: phosphoric acid=1: 3; Temperature is 300 ℃) sapphire substrate is carried out etching, carry out platform etching and back side pattern making again, carry out vapor deposition contact electrode processing procedure afterwards, and do not carry out the chip cutting processing procedure.
Afterwards; With vacuum evaporation plating machine (Vacuum evaporation machine) to not cutting the laser pulse vapor deposition that the LED wafer rear carries out high reflective aluminum; Time 5-10 minute; Thickness is the 0.000001-0.001 millimeter, and vacuum degree is the 0.001-0.0000001 millimetres of mercury, and temperature is set at 100-200 ℃.
Wherein, step 4 has some the secondary optical lens of fluorescent glue to combine with the not cutting LED wafer that is coated with high reflective aluminum, and be connected with power module, accomplish wafer-level packaging.Wherein, point is had the secondary optical lens of fluorescent glue be aided with the gluing mode with the not cutting LED wafer that is coated with high reflective aluminum with mechanical mechanism and combine, temperature is 50-100 ℃.Wherein, LED light emitting module (secondary optical lens and the not cutting LED wafer that is coated with high reflective aluminum) is connected with power module.Can accomplish the application of wafer-level packaging in the LED light fixture.
What should explain at last is; Above embodiment is only in order to describe technical scheme of the present invention rather than the present technique method is limited; The present invention can extend to other modification, variation, application and embodiment on using, and therefore thinks that all such modifications, variation, application, embodiment are in spirit of the present invention and teachings.
Claims (10)
1. the wafer level packaging structure of a LED light fixture; Comprise: lamp housing, high reflective aluminum, do not cut LED wafer, led chip and secondary optical lens, it is characterized in that the secondary optical lens inside bottom is clicked and entered fluorescent glue; Top is led chip; Arrange on the led chip and do not cut the LED wafer that arrange high reflective aluminum on the LED wafer, top and sidepiece coat lamp housing.
2. the wafer level packaging structure of LED light fixture according to claim 1, wherein, led chip takes common cathode to be total to the mode of anode and the both positive and negative polarity of power supply is connected.
3. the wafer level packaging structure of LED light fixture according to claim 1, wherein, the thickness of secondary optical lens is the 0.05-0.3 millimeter, and its lens height is 1-10 centimetre, and the thickness of the inner fluorescent glue that injects of secondary optical lens is the 0.05-0.3 millimeter; The material mixture ratio of fluorescent glue is the bloom first: bloom second: bloom third: the rouge and powder first: rouge and powder second: green meal beetle: green powder second: nano-glass first: nano-glass second=0.1-3.0: 0.1-3.0: 0.1-3.0: 0.05-0.1: 0.05-0.1: 0.03-0.2: 0.03-0.2: 0.2-2.0: 0.2-2.0.
4. the wafer level packaging structure of LED light fixture according to claim 1, wherein, the thickness that does not cut the LED wafer is the 200-500 micron, the thickness of led chip is the 500-1000 micron, does not cut LED crystal column surface growth one deck gallium nitride film.
5. the wafer level packaging structure of LED light fixture according to claim 1; Wherein, wherein, the thickness of high reflective aluminum film is the 1-100 nanometer; High reflective aluminum is plated in the back side of wafer, realizes through high thermal conductivity coefficient adhesive, ultrasonic waves eutectic or pulse laser welding.
6. the preparation method of this encapsulating structure of wafer scale of a LED light fixture comprises:
Step 1, according to the optical characteristics of led chip, the optical parametric of secondary optical lens is obtained in emulation, and carries out the optical grade die and make;
Step 2 prepares secondary optical lens, and fluorescent glue is clicked and entered the lens inboard through point gum machine;
Step 3 is obtained and is not cut the LED wafer, to not cutting the laser pulse vapor deposition that the LED wafer rear carries out high reflective aluminum;
Step 4 has some the secondary optical lens of fluorescent glue to combine with the not cutting LED wafer that is coated with high reflective aluminum, and be connected with power module, accomplish wafer-level packaging.
7. method according to claim 6, wherein, step 1 comprises:
Step 11 with the optical characteristics of optics simulation software to led chip, is carried out comprehensive simulating, obtains the optical parametric that is fit to secondary optical lens;
Step 12 according to the optics simulation result, is carried out the optical grade die and is made.
8. method according to claim 7, wherein, in the step 2, the thickness of secondary optical lens is the 0.05-0.3 millimeter, and its lens height is 1-10 centimetre, and the thickness of the inner fluorescent glue that injects of secondary optical lens is the 0.05-0.3 millimeter; The material mixture ratio of fluorescent glue is the bloom first: bloom second: bloom third: the rouge and powder first: rouge and powder second: green meal beetle: green powder second: nano-glass first: nano-glass second=0.1-3.0: 0.1-3.0: 0.1-3.0: 0.05-0.1: 0.05-0.1: 0.03-0.2: 0.03-0.2: 0.2-2.0: 0.2-2.0.
9. method according to claim 7, wherein, step 3 also comprises:
With the long one deck gallium nitride film of organic metal vapour deposition, cutting crystal wafer is not thinned to the 200-300 micron afterwards on cutting crystal wafer not;
The growth silica membrane carries out etching with etching solution to cutting crystal wafer not;
Carry out platform etching and back side pattern making, carry out vapor deposition contact electrode processing procedure afterwards.
10. method according to claim 8, wherein, step 4 also comprises:
Wherein, point is had the secondary optical lens of fluorescent glue be aided with the gluing mode with the not cutting LED wafer that is coated with high reflective aluminum with mechanical mechanism and combine, temperature is 50-100 ℃; Secondary optical lens is connected with the mode that power module takes common cathode to be total to anode with the LED wafer that do not cut that is coated with high reflective aluminum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110309723.6A CN102412363B (en) | 2010-10-15 | 2011-09-30 | Wafer level packaging structure for light-emitting diode (LED) lamp, and manufacturing method for wafer level packaging structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105091174A CN102095092A (en) | 2010-10-15 | 2010-10-15 | Wafer level packaging structure and method for LED (light emitting diode |
| CN201010509117.4 | 2010-10-15 | ||
| CN201110309723.6A CN102412363B (en) | 2010-10-15 | 2011-09-30 | Wafer level packaging structure for light-emitting diode (LED) lamp, and manufacturing method for wafer level packaging structure |
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| CN102412363A true CN102412363A (en) | 2012-04-11 |
| CN102412363B CN102412363B (en) | 2014-03-12 |
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| CN2010105091174A Pending CN102095092A (en) | 2010-10-15 | 2010-10-15 | Wafer level packaging structure and method for LED (light emitting diode |
| CN201110309723.6A Expired - Fee Related CN102412363B (en) | 2010-10-15 | 2011-09-30 | Wafer level packaging structure for light-emitting diode (LED) lamp, and manufacturing method for wafer level packaging structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105715978A (en) * | 2016-04-26 | 2016-06-29 | 广州市尤特新材料有限公司 | LED light source |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102095092A (en) * | 2010-10-15 | 2011-06-15 | 陈林 | Wafer level packaging structure and method for LED (light emitting diode |
| CN102779921A (en) * | 2012-02-24 | 2012-11-14 | 曾庆路 | Surface mounted LED (Light Emitting Diode) with cooling fin |
| CN102931328B (en) * | 2012-11-28 | 2016-05-11 | 北京半导体照明科技促进中心 | A kind of preparation method of LED packaging body |
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| US20070041198A1 (en) * | 2005-08-18 | 2007-02-22 | Volker Teichmann | Lamp assembly having a reflected component |
| CN200993345Y (en) * | 2006-12-25 | 2007-12-19 | 汉记铝业五金塑胶（惠州）有限公司 | Efficient integrated LED lamp |
| US20080185598A1 (en) * | 2007-02-06 | 2008-08-07 | Luo Mei-Yuh | Light emitting device |
| WO2009096619A1 (en) * | 2008-02-01 | 2009-08-06 | Ytel Photonics Inc. | Optical device package and method for manufacturing thereof |
| CN102095092A (en) * | 2010-10-15 | 2011-06-15 | 陈林 | Wafer level packaging structure and method for LED (light emitting diode |
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- 2010-10-15 CN CN2010105091174A patent/CN102095092A/en active Pending
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- 2011-09-30 CN CN201110309723.6A patent/CN102412363B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070041198A1 (en) * | 2005-08-18 | 2007-02-22 | Volker Teichmann | Lamp assembly having a reflected component |
| CN200993345Y (en) * | 2006-12-25 | 2007-12-19 | 汉记铝业五金塑胶（惠州）有限公司 | Efficient integrated LED lamp |
| US20080185598A1 (en) * | 2007-02-06 | 2008-08-07 | Luo Mei-Yuh | Light emitting device |
| WO2009096619A1 (en) * | 2008-02-01 | 2009-08-06 | Ytel Photonics Inc. | Optical device package and method for manufacturing thereof |
| CN102095092A (en) * | 2010-10-15 | 2011-06-15 | 陈林 | Wafer level packaging structure and method for LED (light emitting diode |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105715978A (en) * | 2016-04-26 | 2016-06-29 | 广州市尤特新材料有限公司 | LED light source |
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| CN102412363B (en) | 2014-03-12 |
| CN102095092A (en) | 2011-06-15 |
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Address after: One of the 528251 Guangdong Province Nanhai District of Foshan city Guicheng street, No. 1 Yongan Road, valley optoelectronics industry community A block sixth layer Applicant after: GUANGDONG REAL FAITH LIGHTING TECHNOLOGY CO., LTD. Address before: 528251 Guangdong Province, Foshan City Nanhai Pingzhou Shawei Industrial District South Street No. 21 Applicant before: Guangdong Real Faith Lighting Co., Ltd. |
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Free format text: CORRECT: APPLICANT; FROM: GUANGDONG REAL FAITH LIGHTING CO., LTD. TO: GUANGDONG REAL FAITH LIGHTING TECHNOLOGY CO., LTD. |
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Granted publication date: 20140312 Termination date: 20200930 |
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