CN102412363B - Wafer level packaging structure for light-emitting diode (LED) lamp, and manufacturing method for wafer level packaging structure - Google Patents
Wafer level packaging structure for light-emitting diode (LED) lamp, and manufacturing method for wafer level packaging structure Download PDFInfo
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Abstract
The invention provides a wafer level packaging structure for a light-emitting diode (LED) lamp, and a manufacturing method for the wafer level packaging structure. The structure comprises a lamp case, a high-reflection aluminum layer, an uncut LED wafer, a LED chip and a secondary optical lens and is characterized in that: fluorescence glue is coated on the bottom of the inner side of the secondary optical lens; the upper part is provided with an LED chip; the uncut LED wafer is distributed on the LED chip; the high-reflection aluminum layer is distributed on the LED wafer; and the top and the bottom are wrapped by the lamp case.
Description
Technical field
The present invention relates to the radiating treatment technology of optical crystal, more specifically, relate to wafer level packaging structure of a kind of LED light fixture and preparation method thereof.
Background technology
The heat dissipation problem of LED is more and more received people's attention now, and this is that the bad junction temperature of dispelling the heat is just high because the light decay of LED is directly relevant with its junction temperature with the life-span, and the life-span is just short.According to A Leiniusi rule, 10 ℃ of the every reductions of temperature, the life-span can extend 2 times.From the light decay of Cree company issue and the relation of junction temperature, can know, if junction temperature can be controlled at 65 ℃, the life-span of its light decay to 70% can be up to 100,000 hours.But the heat radiation of actual LED lamp and this requirement greatly differ from each other now, make the life-span of LED light fixture become a subject matter that affects its performance.
If junction temperature is that 25 luminous while spending are 100%, junction temperature rises to 60 while spending so, and its luminous quantity just only has 90%, and junction temperature is 100 just to drop to 80%, 140 degree while spending and just only have 70%, improves heat radiation as seen, and controlling junction temperature is very important thing.In addition, the heating of LED also can make its spectrum move.Colour temperature raises, and forward current increases (during constant voltage power supply), and reverse current also increases, and thermal stress increases, the aging acceleration of fluorescent material epoxy resin.
Conventionally the power of this LED a plurality of LED crystal grain integrated at present, obtains high-power LED, more than can reach 5W.For a plurality of LED crystal grain (with eutectic (Eutectic) or cover crystalline substance (Flip-Chip) encapsulation) is linked together, need to adopt accurate printed circuit to connect.In order to obtain better heat dissipation characteristics, conventionally adopt ceramic substrate, this ceramic substrate is to consist of aluminium oxide and aluminium nitride.
LED makes after light fixture, and the heat that LED chip produces always falls apart in air by the shell of light fixture.Because the thermal capacity of LED chip is very little, if it is bad to dispel the heat, little by little the accumulation of heat will make the junction temperature of chip improve rapidly, if be operated in over a long time the state of high junction temperature, its life-span will shorten very soon.Yet these heats are wanted to be really guided out chip, arrive extraneous air, pass through a lot of approach.Specifically, the heat that LED chip produces, from it heat dissipation metal piece out, first through scolder to the PCB of aluminium base, more just arrive aluminium radiator by heat-conducting glue.
Summary of the invention
For overcoming above-mentioned heat radiation and luminous existing defect, the present invention proposes wafer level packaging structure of a kind of LED light fixture and preparation method thereof.
According to an aspect of the present invention, a kind of wafer level packaging structure of LED light fixture has been proposed, comprise: lamp housing, high reflective aluminum, do not cut LED wafer, LED chip and secondary optical lens, it is characterized in that, secondary optical lens inside bottom is clicked and entered fluorescent glue, and top is LED chip, on LED chip, arranges and does not cut LED wafer, on LED wafer, cloth sets high reflective aluminum, and top and sidepiece are coated lamp housing.
According to a further aspect in the invention, proposed a kind of preparation method of this encapsulating structure of wafer scale of LED light fixture, having comprised: step 1, according to the optical characteristics of LED chip, the optical parametric of secondary optical lens is obtained in emulation, and carries out the making of optical grade die; Step 2, prepares secondary optical lens, and fluorescent glue is clicked and entered to lens inner side by point gum machine; Step 3, obtains and does not cut LED wafer, carries out the laser pulse evaporation of high reflective aluminum to not cutting LED wafer rear; Step 4, has some the secondary optical lens of fluorescent glue to be combined with the not cutting LED wafer that is coated with high reflective aluminum, and be connected with power module, complete wafer-level packaging.
The present invention utilizes uncut LED wafer directly to assemble with various secondary optical lens, and carries out high efficiency and heat radiation processing in wafer rear, and wafer is directly contacted with lamp housing, and raising radiating efficiency also reduces the heat radiation cost of LED light fixture.
Accompanying drawing explanation
Fig. 1 is the generalized section of the wafer level packaging structure of LED light fixture;
Fig. 2 is the schematic diagram of the LED wafer of the common cathode common anode utmost point;
Fig. 3 is the schematic diagram of secondary optical lens;
Fig. 4 is that the integral body of secondary optical lens is prepared schematic diagram;
Fig. 5 is the preparation process schematic diagram that does not cut LED wafer.
As shown in the figure, in order clearly to realize the structure of embodiments of the invention, specific structure and device have been marked in the drawings, but this is only for signal needs, be not intended to limit the invention in this ad hoc structure, device and environment, according to specific needs, those of ordinary skill in the art can adjust these devices and environment or revise, and the adjustment of carrying out or modification are still included in the scope of accompanying claim.
Embodiment
Below in conjunction with the drawings and specific embodiments, wafer level packaging structure of a kind of LED light fixture provided by the invention and preparation method thereof is described in detail.
Wherein, in the following description, will a plurality of different aspects of the present invention be described, yet, for those skilled in the art, can only utilize some or all structure of the present invention or flow process to implement the present invention.For the definition of explaining, set forth specific number, configuration and order, but clearly, in the situation that there is no these specific detail, also can not implement the present invention.In other cases, in order not obscure the present invention, for some well-known features, will no longer be described in detail.
The present invention adopts uncut LED wafer, and LED chip takes the mode of the common cathode common anode utmost point and the both positive and negative polarity of power supply to be connected, wafer adopts the sapphire substrate of diameter 1-4 inch, and substrate back deposits high reflective aluminum film in case leak-stopping light with manufacture of semiconductor.By point gum machine, fluorescent glue is clicked and entered in secondary optical lens, then through baking, fluorescent glue is solidified, then stick together and engage with LED wafer, complete the making of LED light emitting module.By with surface have heat radiation coating lamp housing be close to assembling, complete the wafer level packaging structure of LED light fixture.
According to this technological invention, a kind of wafer level packaging structure of LED light fixture is provided, as shown in Figure 1, the mode of making LED light fixture with LED wafer collocation secondary optical lens forms, and its structure comprises: lamp housing, high reflective aluminum, do not cut LED wafer, LED chip and secondary optical lens.Secondary optical lens inside bottom is clicked and entered fluorescent glue, and top is LED chip, on LED chip, arranges and does not cut LED wafer, and on LED wafer, cloth sets high reflective aluminum, and top and sidepiece are coated lamp housing.
Wherein, lamp housing can be aluminium, high thermal conductivity coefficient plastics, ceramic-metal composites or polymer ceramic composite material, and its thickness is 0.1-1.0 millimeter, and lamp housing is outer can be coated with far infrared radiation nanometer heat radiation coating, and paint thickness is 10-50 micron.
Wherein, the thickness of high reflective aluminum film is 1-100 nanometer, also can use nano-titanium dioxide film, and its thickness is 1-100 nanometer.
Wherein, the thickness that does not cut LED wafer is 200-500 micron, and alternative material is sapphire (Sapphire), diamond (Diamond), carborundum (Silicon carbide), gallium nitride (GalliumNitride) or silicon nitride (Silicon Nitride) etc.The thickness of LED chip can be 500-1000 micron.Do not cut LED crystal column surface growth one deck gallium nitride film.
Wherein, the thickness of secondary optical lens is 0.05-0.3 millimeter, its lens height is 1-10 centimetre, use material is Merlon (Poly carbonate), acrylic (Poly methyl methacrylate), liquid glass (Liquid state glass) or graft type high temperature transparent polymer (for example, polyimides-poly-methyl propionyl acid methyl esters-silicone) etc.The inner fluorescent glue that injects of secondary optical lens, the thickness of fluorescent glue is 0.05-0.3 millimeter, and the proportioning of the material using of fluorescent glue can be bloom first: bloom second: bloom third: rouge and powder first: rouge and powder second: green meal beetle: green powder second: nano-glass first: nano-glass second=(0.1-3.0): (0.1-3.0): (0.1-3.0): (0.05-0.1): (0.05-0.1): (0.03-0.2): (0.03-0.2): (0.2-2.0): (0.2-2.0).
Wherein, high reflective aluminum is plated in the back side of wafer, by high thermal conductivity coefficient adhesive, ultrasonic waves eutectic or pulsed laser welding, realizes.
Wherein, Fig. 2 illustrates the schematic diagram of the LED wafer of the common cathode common anode utmost point, and as shown in Figure 2, this LED wafer does not cut, and LED chip takes the mode of the common cathode common anode utmost point to be connected with supply module.
Wherein, Fig. 3 illustrates, the connection diagram of secondary optical lens and not cutting crystal wafer, wherein, fluorescent glue is clicked and entered secondary optical lens inside bottom with point gum machine, and with uncut LED wafer with mechanical mechanism mode fluid-tight engagement.
In another embodiment of the present invention, provide a kind of preparation method of this encapsulating structure, wherein, the method comprises: step 1, and according to the optical characteristics of LED chip, the optical parametric of secondary optical lens is obtained in emulation, and carries out the making of optical grade die; Step 2, prepares secondary optical lens, and fluorescent glue is clicked and entered to lens inner side by point gum machine; Step 3, obtains and does not cut LED wafer, carries out the laser pulse evaporation of high reflective aluminum to not cutting LED wafer rear; Step 4, has some the secondary optical lens of fluorescent glue to be combined with the not cutting LED wafer that is coated with high reflective aluminum, and be connected with power module, complete wafer-level packaging.
Particularly, in step 1, according to the optical characteristics of LED chip, the optical parametric of secondary optical lens is obtained in emulation, and carries out the making of optical grade die.Wherein, elder generation is the optical characteristics for blue light laser diode chip or blue light diode chip with optical simulation software (Opticalsimulation software), as half-value angle, power, light type (batswing tab: Bat wing etc.) reflectivity, refractive index, the proportion of goods damageds, the light transmittance of collocation glass, plastics or LED wafer, carry out comprehensive simulating, obtain the optical parametric of the secondary optical lens that is applicable to current use glass or plastics material, relevant parameter such as curvature, thickness, highly, the optical parametric such as light transmittance, reflectivity, refractive index and birefringence.
According to optical simulation result, carry out the making of optical grade die afterwards.Wherein, first with Digit Control Machine Tool, carry out the cutting of die (Mold insert) profile, and by grinding, polishing (Polishing).Wherein, first cerium oxide abrasive slurry (Slurry) is poured on the abrasive disk of cmp (Chemical Mechanical Polishing) equipment, die is placed on abrasive disk, adjust Whole Equipment levelness and reach 95-100, adjustment relative rotation speed is 1000-20000rpm, abrasive disk Temperature Setting is 20-120 ℃, and milling time can be 1-10 minute.
Change afterwards grinding pad, diamond polishing fluid is poured on the abrasive disk of chemical-mechanical grinding device again, adjusted Whole Equipment levelness and reach 98-100, adjustment relative rotation speed is 5000-10000rpm, abrasive disk Temperature Setting is to 50-150 ℃, and milling time can be 1-10 minute.With pure water, clean afterwards, pure water temperature is set as 20-100 ℃, and the time can be 1-10 minute.Toast and dewater afterwards, Temperature Setting is 90-150 ℃; Time can be 30-120 minute.
Afterwards, with steel mesh India side formula, eurymeric photoresist (Positive photo resist) is printed to die surface, eurymeric photoresist thickness is 0.001-0.01 millimeter.Premenstrual baking journey (Pre-bakingprooess) again, this process parameter is: Temperature Setting is 80-120 ℃, the time can be 10-50 minute.With the mask blank (Photo-mask) of quartzy (Quartz) chromium plating, be placed in ultraviolet photoetching system (Ultraviolet exposure system) again and carry out exposure manufacture process (Exposure process), the time is 1-80 second; Energy is thousand joule of 100-200.Carry out again afterwards developing manufacture process (Development process), by exposure after die be soaked in the sodium hydrate aqueous solution that weight percent concentration is 3-10 (3-10wt%) (NaOH) (aq) in, solution temperature is 50-80 ℃, and soak time is 1-10 minute.With pure water, clean afterwards temperature 20-100 ℃, time 1-10 minute.Toast afterwards and dewater and rear baking journey, Temperature Setting is 90-150 ℃, and the time can be 30-120 minute, then with plasma etching (Plasma etching), etching is carried out in die surface, and vacuum degree is 0.001-0.000001 millimetres of mercury; Time is 1-10 minute; Use gas is argon gas (purity is 99.999%).
Processing procedure to be etched is complete, carries out stripping processing procedure (Stripping process), and the die after etching is soaked in to the sodium hydrate aqueous solution that weight percent concentration is 5-10 (5-10wt%) (NaOH) (aq); Temperature is 70-100 ℃; Time is 3-15 minute.With pure water, clean afterwards, Temperature Setting is 20-100 ℃) time can be 1-10 minute), toast afterwards and dewater that (Temperature Setting is 90-150 ℃; Time can be 30-120 minute).
Afterwards for reducing the surface roughness (Surface roughness) of die pattern (Patterned), need carry out electrobrightening processing procedure (Electrolytic polishing), die is inserted in electrolytic polishing trough, and polishing fluid is chloride electrolyte (as sodium chloride etc.); Temperature is 50-150 ℃; Time can be 30-180 minute; Concentration is 0.01-10wt%.With pure water, clean afterwards, Temperature Setting is 20-100 ℃ again; Time can be 1-10 minute, toasts and dewaters afterwards, and Temperature Setting is 90-150 ℃; Time can be 30-120 minute, completes high-precision optical grade die and makes.
Afterwards, the high-precision optical level die completing and die holder (Mold base) are organized to vertical (Assembly), by optical grade injection compression moulding mould (Injection compression mold), be loaded on electric injection molding machine (Electro dynamic injection molding), optical grade polycarbonate (PC) or acryl (PMMA) or other transparent optical materials are carried out to removal process, and temperature is 40-80 ℃; Time is 8-12 hour, and electric injection molding machine is preheated to 100-300 ℃.Adjust each process parameter, if temperature is 100-300 ℃, the time is 1-30 second, and speed is 100-200 cel, and pressure is 200-300 unit, and in product mould, the time of staying is 5-15 second, and mould temperature is 80-150 ℃.After the demoulding, glass or plastics secondary optical lens need carry out annealing in process (Annealing process) to eliminate the internal stress of lens module, glass or plastics secondary optical lens lens are inserted in vacuum oven with temperature 70-150 ℃, time 10-240 minute, completes the making of high-accuracy glass or plastics secondary optical lens lens.
As shown in Figure 4, wherein, in step 2, prepare secondary optical lens, and fluorescent glue is clicked and entered to lens inner side with point gum machine.Wherein, fluorescent material and transparent enclosure glue (high index of refraction) with the different proportionings that configure voluntarily, with point gum machine, click and enter lens inner side, following (the A glue: B glue: bloom: rouge and powder: green powder: blue powder=> (1-2.5): (1-2.5): (0.1-2.5): (0.01-2.5): (0.02-2.5): (0.03-2.5)) of proportioning, be more than weight ratio. after colour temperature is adjusted correction program, carry out baking program, Temperature Setting is 100-200 ℃; Time can be 30-90 minute, so can complete the integral manufacturing of secondary optical lens.Fluorescent glue can also be the proportioning of previous embodiment.
As shown in Figure 5, in step 3, obtain and do not cut LED wafer, not cut LED wafer rear, carry out the laser pulse evaporation of high reflective aluminum.On sapphire substrate (Sapphire substrate), with organic metal vapour deposition (Metal Organic Chemical Vapor Deposition) long one deck gallium nitride film (GaN thin film), afterwards by substrate attenuation to 200-300 micron, and the thickness of former sapphire substrate is 430-480 micron, the silica membrane of growing up afterwards, then with etching solution (sulfuric acid: phosphoric acid=1: 3; Temperature is 300 ℃) sapphire substrate is carried out to etching, then carry out platform etching and back side pattern making, carry out afterwards evaporation contact electrode processing procedure, and do not carry out chip cutting processing procedure.
Afterwards, with vacuum evaporation plating machine (Vacuum evaporation machine), to not cutting LED wafer rear, carry out the laser pulse evaporation of high reflective aluminum, time 5-10 minute, thickness is 0.000001-0.001 millimeter, vacuum degree is 0.001-0.0000001 millimetres of mercury, and Temperature Setting is 100-200 ℃.
Wherein, step 4, has some the secondary optical lens of fluorescent glue to be combined with the not cutting LED wafer that is coated with high reflective aluminum, and be connected with power module, complete wafer-level packaging.Wherein, the secondary optical lens that point is had to a fluorescent glue is aided with gluing mode with the not cutting LED wafer that is coated with high reflective aluminum with mechanical mechanism and gives combination, and temperature is 50-100 ℃.Wherein, LED light emitting module (secondary optical lens and the not cutting LED wafer that is coated with high reflective aluminum) is connected with power module.Can complete wafer-level packaging in the application of LED light fixture.
Finally it should be noted that, above embodiment is only in order to describe technical scheme of the present invention rather than present technique method is limited, the present invention can extend to other modification, variation, application and embodiment in application, and therefore thinks that all such modifications, variation, application, embodiment are in spirit of the present invention and teachings.
Claims (8)
1. the wafer level packaging structure of a LED light fixture, comprise: lamp housing, nano-titanium dioxide film, do not cut LED wafer, LED chip and secondary optical lens, it is characterized in that, secondary optical lens inside bottom is clicked and entered fluorescent glue, top is LED chip, on LED chip, arranges and does not cut LED wafer, on LED wafer, arranges nano-titanium dioxide film, top and sidepiece are coated lamp housing, and the thickness of nano-titanium dioxide film is 1-100 nanometer; Wherein, the thickness of secondary optical lens is 0.05-0.3 millimeter, and its lens height is 1-10 centimetre, and the thickness of the inner fluorescent glue injecting of secondary optical lens is 0.05-0.3 millimeter; The material mixture ratio of fluorescent glue is bloom first: bloom second: bloom third: rouge and powder first: rouge and powder second: green meal beetle: green powder second: nano-glass first: nano-glass second=0.1-3.0:0.1-3.0:0.1-3.0:0.05-0.1:0.05-0.1:0.03-0.2:0.03-0.2:0.2-2.0:0.2-2.0.
2. the wafer level packaging structure of LED light fixture according to claim 1, wherein, LED chip takes the mode of the common cathode common anode utmost point and the both positive and negative polarity of power supply to be connected.
3. the wafer level packaging structure of LED light fixture according to claim 1, wherein, the thickness that does not cut LED wafer is 200-500 micron, the thickness of LED chip is 500-1000 micron, does not cut LED crystal column surface growth one deck gallium nitride film.
4. the wafer level packaging structure of LED light fixture according to claim 1, wherein, nano-titanium dioxide film is plated in the back side of wafer, by high thermal conductivity coefficient adhesive, ultrasonic waves eutectic or pulsed laser welding, realizes.
5. a preparation method for the wafer level packaging structure of LED light fixture, comprising:
Step 1, according to the optical characteristics of LED chip, the optical parametric of secondary optical lens is obtained in emulation, and carries out the making of optical grade die;
Step 2, prepares secondary optical lens, and fluorescent glue is clicked and entered to lens inner side by point gum machine;
Step 3: obtain and do not cut LED wafer, carry out the laser pulse evaporation of nano-titanium dioxide film to not cutting LED wafer rear;
Step 4: point is had the secondary optical lens of fluorescent glue be combined with the not cutting LED wafer that is coated with nano-titanium dioxide film, and be connected with power module, complete wafer-level packaging;
Wherein, in step 2, the thickness of secondary optical lens is 0.05-0.3 millimeter; Its lens height is 1-10 centimetre, and the thickness of the inner fluorescent glue injecting of secondary optical lens is 0.05-0.3 millimeter; The material mixture ratio of fluorescent glue is bloom first: bloom second: bloom third: rouge and powder first: rouge and powder second: green meal beetle: green powder second: nano-glass first: nano-glass second=0.1-3.0:0.1-3.0:0.1-3.0:0.05-0.1:0.05-0.1:0.03-0.2:0.03-0.2:0.1-2.0:0.2-2.0.
6. method according to claim 5, wherein, step 1 comprises:
Step 11, the optical characteristics with optical simulation software for LED chip, carries out comprehensive simulating, obtains the optical parametric that is applicable to secondary optical lens;
Step 12, according to optical simulation result, carries out the making of optical grade die.
7. method according to claim 5, wherein, step 3 also comprises:
On cutting crystal wafer not, with the long one deck gallium nitride film of organic metal vapour deposition, cutting crystal wafer is not thinned to 200-300 micron afterwards;
Growth silica membrane, carries out etching with etching solution to cutting crystal wafer not;
Carry out platform etching and back side pattern making, carry out afterwards evaporation contact electrode processing procedure.
8. method according to claim 7, wherein, step 4 also comprises:
Wherein, the secondary optical lens that point is had to a fluorescent glue is aided with gluing mode with the not cutting LED wafer that is coated with nano-titanium dioxide film with mechanical mechanism and gives combination, and temperature is 50-100 ℃; Take the mode of the common cathode common anode utmost point to be connected with the LED wafer that do not cut that is coated with nano-titanium dioxide film with power module secondary optical lens.
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| CN201110309723.6A CN102412363B (en) | 2010-10-15 | 2011-09-30 | Wafer level packaging structure for light-emitting diode (LED) lamp, and manufacturing method for wafer level packaging structure |
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| CN2010105091174A CN102095092A (en) | 2010-10-15 | 2010-10-15 | Wafer level packaging structure and method for LED (light emitting diode |
| CN201010509117.4 | 2010-10-15 | ||
| CN201110309723.6A CN102412363B (en) | 2010-10-15 | 2011-09-30 | Wafer level packaging structure for light-emitting diode (LED) lamp, and manufacturing method for wafer level packaging structure |
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| CN102095092A (en) * | 2010-10-15 | 2011-06-15 | 陈林 | Wafer level packaging structure and method for LED (light emitting diode |
| CN102779921A (en) * | 2012-02-24 | 2012-11-14 | 曾庆路 | Surface mounted LED (Light Emitting Diode) with cooling fin |
| CN102931328B (en) * | 2012-11-28 | 2016-05-11 | 北京半导体照明科技促进中心 | A kind of preparation method of LED packaging body |
| CN105715978A (en) * | 2016-04-26 | 2016-06-29 | 广州市尤特新材料有限公司 | LED light source |
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| CN200993345Y (en) * | 2006-12-25 | 2007-12-19 | 汉记铝业五金塑胶（惠州）有限公司 | Efficient integrated LED lamp |
| CN102095092A (en) * | 2010-10-15 | 2011-06-15 | 陈林 | Wafer level packaging structure and method for LED (light emitting diode |
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| DE102005040227A1 (en) * | 2005-08-18 | 2007-02-22 | Ulo Fahrzeugleuchten Gmbh | Luminaire unit with a reflector component and reflector component for a luminaire unit |
| TW200834958A (en) * | 2007-02-06 | 2008-08-16 | Chen Guei Fang | Light-emitting diode assembly, method of making the same and substrate thereof |
| WO2009096619A1 (en) * | 2008-02-01 | 2009-08-06 | Ytel Photonics Inc. | Optical device package and method for manufacturing thereof |
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| CN200993345Y (en) * | 2006-12-25 | 2007-12-19 | 汉记铝业五金塑胶（惠州）有限公司 | Efficient integrated LED lamp |
| CN102095092A (en) * | 2010-10-15 | 2011-06-15 | 陈林 | Wafer level packaging structure and method for LED (light emitting diode |
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