CN102275865B - Pressure transducer and manufacture method thereof - Google Patents
Pressure transducer and manufacture method thereof Download PDFInfo
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- CN102275865B CN102275865B CN201110124603.9A CN201110124603A CN102275865B CN 102275865 B CN102275865 B CN 102275865B CN 201110124603 A CN201110124603 A CN 201110124603A CN 102275865 B CN102275865 B CN 102275865B
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Abstract
The invention provides a kind of pressure transducer and manufacture method thereof. This pressure transducer manufacture method, it is characterised in that including: sequentially form top layer via hole image and top-level metallic layer pattern on substrate from bottom to top; Top layer metallic layer is formed sacrifice layer; Sacrifice layer is formed support slot; Deposition release guard layer; Release guard layer in support slot is formed contact hole graph; Deposition electrode of metal layer, and realize the graphical to form electrode of metal of electrode of metal layer, described electrode of metal is connected with top-level metallic layer pattern by contact hole; Further precipitation release guard layer, and realize release guard layer pattern; Release guard layer is formed release aperture; And complete release process and deposit cover closing material layer.
Description
Technical field
The present invention relates to semiconductor applications, more particularly, it relates to a kind of pressure transducer manufacture method and the pressure transducer that obtains according to this pressure transducer manufacture method.
Background technology
Microelectromechanical systems (MEMS) technology have small, intelligent, can perform, can integrated, the plurality of advantages such as processing compatibility good, cost is low, therefore it has started to be widely used in the numerous areas including infrared detection technique field. Pressure transducer is a kind of conventional sensor component, and its operation principle has resistance and electric capacity two class. Wherein condenser type is more common, is that capacitance variations occurs the capacitance structure utilizing vacuum chamber to be formed under pressure, and is transformed into the signal of telecommunication and is amplified processing.
Pressure transducer technique is general and CMOS (complementary metal oxide semiconductors (CMOS)) processing compatibility is poor, so early stage is difficulty with large-scale production. In recent years owing to the market demand of MEMS product expands gradually, the concept of CMOS-MEMS is proposed by people gradually. CMOS-MEMS utilizes CMOS technology to make periphery to read and signal processing circuit, then makes the structure of sensor and micro mechanical system on cmos circuit, and process compatible sex chromosome mosaicism is the key of puzzlement CMOS-MEMS technology all the time.
Specifically, current pressure transducer is generally adopted body silicon materials and forms vacuum chamber, is difficult to compatible with CMOS technology; Meanwhile, its vacuum chamber is formed by encapsulation technology, and relatively costly and yield rate can decline a lot because of packaging technology; It addition, CMOS-MEMS Single-Chip Integration can propose more requirement to technique, for instance how to solve to planarize this key issue. Therefore, how to provide the pressure sensor technique of a kind of CMOS-MEMS Single-Chip Integration, reduce its packaging cost, and increase substantially properties of product and reliability, it has also become the technical problem that industry is urgently to be resolved hurrily.
Summary of the invention
Therefore, it is an object of the present invention to provide a kind of pressure transducer manufacture method compatible with CMOS technology and pressure transducer, and it is a further object to provide a kind of pressure transducer manufacture method compatible with process for copper, pressure transducer.
According to the first aspect of the invention, it is provided that a kind of pressure transducer manufacture method, including: on substrate, sequentially form top layer via hole image from bottom to top and in order to realize the top-level metallic layer pattern of pressure transducer bottom electrode; Top layer metallic layer is formed sacrifice layer; Sacrifice layer is formed the support slot figure support slot arranged in bottom electrode figure peripheral annular; Deposition release guard layer; Release guard layer in support slot is formed contact hole graph; Deposition electrode of metal layer, and realize the graphical to form electrode of metal of electrode of metal layer, described electrode of metal is connected with top-level metallic layer pattern by contact hole; Further precipitation release guard layer, and realize release guard layer pattern; Release guard layer is formed release aperture; And complete release process and deposit cover closing material layer, to utilize support slot and the cavity body structure of release guard layer, release aperture formation closing.
Preferably, in above-mentioned pressure transducer manufacture method, substrate sequentially form from bottom to top in the step of top layer via hole image and top-level metallic layer pattern, metal in this top layer through hole is Cu or W or Al, its forming method is to be initially formed via hole image, deposit metal again, then pass through and be etched back to or the method for chemically mechanical polishing realizes via metal, and, deposited top layer metal step is performed after forming top layer via hole image, in deposited top layer metal step, be initially formed Ti TiN or Ta TaN or TaN Ta layer, deposited top layer metal subsequently, and after deposited top layer metal, deposit TaN and TiN, to reduce metallic reflection rate when follow-up photoetching, wherein top-level metallic material is Al or W, and its graphical scheme is to be formed by the metal etch process in road after standard aluminum.
Preferably, in above-mentioned pressure transducer manufacture method, adhesion layer between top layer metallic layer and sacrifice layer, can be included, for strengthening the contact of sacrifice layer and other materials.
Preferably, in above-mentioned pressure transducer manufacture method, in the step sequentially forming top layer via hole image and top-level metallic layer pattern on substrate from bottom to top, metal and top-level metallic in top layer through hole are Cu, and its process implementation method is Damascus technics; And wherein, after sequentially forming the step of top layer via hole image and top-level metallic layer pattern on substrate from bottom to top, deposit adhesion layer; Sacrifice layer is formed subsequently on top layer metallic layer.
Preferably, in above-mentioned pressure transducer manufacture method, the processing technology sequentially forming the step employing of top layer via hole image and top-level metallic layer pattern on substrate from bottom to top is single Damascus technics or dual damascene process.
Preferably, in above-mentioned pressure transducer manufacture method, substrate sequentially form from bottom to top in the step of top layer via hole image and top-level metallic layer pattern, the through hole and the metallic pattern that are arranged in dielectric material is formed first with dual damascene process, then deposition Ta TaN or TaN Ta layer, deposit Ni metal subsequently, and utilize the method for chemically mechanical polishing to form the metallization of top layer through hole and top-level metallic figure; Or sequentially form in the step of top layer via hole image and top-level metallic layer pattern on substrate from bottom to top, utilize the method for single Damascus technics first to realize the graphical of top layer through hole and metallization, then realize the graphical of top-level metallic figure and metallization; Utilize Damascus technics to also achieve the planarization of silicon chip surface, to increase the process window of subsequent technique simultaneously.
Preferably, in above-mentioned pressure transducer manufacture method, described adhesion layer is additionally operable to strengthen the contact of sacrifice layer and other materials, and described adhesion layer is tetraethyl orthosilicate and/or silicon dioxide.
Preferably, in above-mentioned pressure transducer manufacture method, described electrode of metal is Ti electrode, tantalum electrode, the titanium nitride of stacked on top of one another and the tantalum of Ti electrode or stacked on top of one another and tantalum nitride electrode, and described electrode of metal is connected with circuit by contact hole; Described contact hole is formed in the sacrificial layer material in support slot.
Preferably, in above-mentioned pressure transducer manufacture method, when described release aperture is graphical, sacrifice layer stops, and the depth-to-width ratio of release aperture is more than 1.
Preferably, in above-mentioned pressure transducer manufacture method, also include utilizing this support slot and follow-up release guard layer, release aperture formation vacuum chamber structure; And wherein, the electrode of metal of described pressure transducer is released protective layer encirclement.
Preferably, in above-mentioned pressure transducer manufacture method, described complete release process and deposit the step of cover closing material layer and include: after release aperture is opened, first carry out release process, it is freed to remove by sacrifice layer, then physical vapour deposition (PVD) and/or chemical vapour deposition technique deposition cover closing material the pendency contact formation Vacuum Package that when utilizing deposition, cover closing material is formed are utilized in release aperture, thus forming the vacuum chamber structure of pressure transducer.
Preferably, in above-mentioned pressure transducer manufacture method, between top layer via hole image, it is filled with dielectric material.
Preferably, in above-mentioned pressure transducer manufacture method, the electrode of metal in contact hole contacts with top layer metallic layer.
Preferably, in above-mentioned pressure transducer manufacture method, release aperture is arranged in the release guard layer above sacrifice layer.
Preferably, in above-mentioned pressure transducer manufacture method, described pressure transducer manufacture method is used for manufacturing capacitance pressure transducer.
According to the second aspect of the invention, it is provided that the pressure transducer of the manufacture that a kind of pressure transducer manufacture method described according to a first aspect of the present invention manufactures.
Owing to have employed pressure transducer manufacture method described according to a first aspect of the present invention, therefore, it will be appreciated by persons skilled in the art that pressure transducer according to a second aspect of the present invention is capable of the Advantageous Effects achieved by pressure transducer manufacture method according to the first aspect of the invention equally.
Accompanying drawing explanation
In conjunction with accompanying drawing, and by with reference to detailed description below, it will more easily the present invention is had more complete understanding and its adjoint advantage and feature is more easily understood, wherein:
Fig. 1 illustrates the flow chart of the pressure transducer manufacture method according to first preferred embodiment of the invention;
Fig. 2 illustrates the profile of the intermediate structure in the pressure transducer manufacture process according to first preferred embodiment of the invention; And
Fig. 3 illustrates the top view of pressure transducer according to an embodiment of the invention.
Fig. 4 illustrates the flow chart of the pressure transducer manufacture method according to second preferred embodiment of the invention;
Fig. 5 illustrates the profile of the pressure transducer intermediate structure obtained in the pressure transducer manufacture method process according to second preferred embodiment of the invention; And
Fig. 6 illustrates the top view of pressure transducer according to an embodiment of the invention.
It should be noted that accompanying drawing is used for illustrating the present invention, and the unrestricted present invention. Further, in accompanying drawing, same or like element indicates same or like label.
Detailed description of the invention
In order to make present disclosure clearly with understandable, below in conjunction with specific embodiments and the drawings, present disclosure is described in detail.
<the first preferred embodiment>
Fig. 1 illustrates the flow chart of pressure transducer manufacture method according to the first advantageous embodiment of the invention. Further, Fig. 2 illustrates the profile of an intermediate structure in the manufacture process of the pressure transducer of the embodiment of the present invention that the pressure transducer manufacture method according to Fig. 1 obtains.
In conjunction with, shown in Fig. 1 and Fig. 2, including step as described below according to the pressure transducer manufacture method of first preferred embodiment of the invention.
In step sl, in substrate 1 (such as silicon substrate) upper formation top layer through hole 2 structure; Such as in a specific embodiment, silicon substrate 1 defines the through-hole structure being filled with tungsten (W) or aluminum (Al). Preferably, it is filled with dielectric material between top layer through hole. This dielectric material is such as insulant or semi-conducting material, for instance silicon dioxide SiO2��
In step s 2, deposited top layer metal level 3, and it is graphical to realize it; Such as, can deposited top layer Al metal level to realize it graphical.
In step s3, in top layer metallic layer and top layer metallic layer overburden sacrifice layer 9; Specifically, available chemical vapour deposition (CVD) (CVD) deposits sacrificial silicon layer 9. This sacrificial layer material is the Organic substances such as polyimides (Polymide) or silicon or SiO2��
In step s 4, sacrifice layer 9 forms support slot structure. Specifically, Fig. 3 illustrates the top view of pressure transducer according to an embodiment of the invention, and this figure is mainly used in illustrating the layout of support slot 5, and namely this support slot 5 is circular layout in device periphery.
In step s 5, in support slot and sacrifice layer 9 upper surface deposition release guard layer 6; Wherein, the material of release guard layer is such as SiO2��
In step s 6, the sacrificial layer material in support slot is formed contact hole or contact groove 4, namely realizes the graphical of contact hole 4, to realize contacting of electrode of metal and substrate.
In the step s 7, deposit metal, and realize the graphical of electrode of metal, to form electrode of metal 7. Wherein, the material of metal electrode is such as metal Ta. Preferably, the electrode of metal in contact hole contacts with top layer metallic layer.
In step s 8, further precipitation release guard layer 6 to realize it graphical. Equally, the material of release guard layer 6 is such as SiO2. The actual microbridge hanging structure in products application can be a unit, it is also possible to be a lot of unit (array format). The patterned effect of release guard layer 6 herein is in that the individual unit in definition individual unit or array. Local needs between unit and outside unit are release guard layer open, in order to remove sacrifice layer when release, spill top-level metallic, in order to be used for realizing the functions such as pad PAD.
Thus, just obtain after step s8 the embodiment of the present invention illustrated in fig. 2 pressure transducer manufacture process in the profile of an intermediate structure.
In step s 9, it is achieved release aperture 8 graphical, release aperture 8 is namely formed. Specifically, for instance, in a specific embodiment, can pass through to utilize xenon difluoride (XeF2) release process, remove sacrificial silicon layer. Preferably, release aperture is arranged in the release guard layer above sacrifice layer.
In step slo, carry out release process, and deposit cover closing material (not shown), it is achieved pressure sensor structure. Cover closing material is such as SiO2��
With reference now to an intermediate structure in the manufacture process of the pressure transducer shown in Fig. 2, profile. This structure includes: substrate 1; Top layer through hole 2; Top layer metallic layer 3 (after being deposited on this metallic layer graphic on top layer via layer, it is possible to achieve the bottom electrode of capacitance pressure transducer, and with the contacting of electrode of metal 7); Sacrifice layer 9 (namely forming the hanging structure of sensor after sacrifice layer 9 release); Support slot 5 (for supporting whole pressure chamber vacuum structure without post); Release guard layer 6 (being used for protecting upper electrode material); Electrode of metal 7 (for realizing the upper electrode of capacitance pressure transducer); Release guard layer (being used for protecting upper electrode material) in electrode of metal 7; And release aperture 8 (for releasing sacrificial layer material).
In an intermediate structure in the manufacture process of the pressure transducer of the embodiment of the present invention illustrated in fig. 2, top layer through hole and top layer metallic layer are made, thus achieve the bottom electrode of pressure transducer, and utilize electrode of metal to realize electrode on pressure transducer, utilize support slot and release aperture and cover closing material to realize without post vacuum structure.
Preferably, in a specific embodiment, the metal in this top layer through hole is Cu or W or Al, and its forming method is to be initially formed via hole image, then deposits metal, then passes through and is etched back to or the method for chemically mechanical polishing realizes via metal.
And, deposited top layer metal step is performed after forming top layer via hole image, in deposited top layer metal step, be initially formed Ti TiN or Ta TaN or TaN Ta layer, deposited top layer metal subsequently, and after deposited top layer metal, deposit TaN and TiN, to reduce metallic reflection rate when follow-up photoetching; Wherein top-level metallic material is Al or W, and its graphical scheme is to be formed by the metal etch process in road after standard aluminum. This top-level metallic can be used to realize lower metal electrode function and pad PAD function.
It is further preferred that in a specific embodiment, adhesion layer between top layer metallic layer and sacrifice layer, can be included, for strengthening the contact of sacrifice layer and other materials; The material of this adhesion layer is based on tetraethyl orthosilicate (TEOS) or SiH4Silicon oxide.
It is further preferred that in a specific embodiment, the support slot figure of this pressure transducer surrounds the bottom electrode figure of pressure transducer completely, utilizes this support slot and follow-up release guard layer, release aperture formation vacuum chamber structure; The electrode of metal of this pressure transducer is released protective layer and surrounds, and avoids being subject to the damage of release process with shield electrode material.
It is further preferred that in a specific embodiment, this electrode of metal is Ti electrode, tantalum electrode, the titanium nitride of stacked on top of one another and the tantalum of Ti electrode or stacked on top of one another and tantalum nitride electrode. This electrode of metal is connected with circuit by contact hole 4; The contact hole 4 of this pressure transducer can also be contact groove structure.
It is further preferred that in a specific embodiment, when this release aperture is graphical, sacrifice layer stops, and the depth-to-width ratio of release aperture is more than 1.
Further preferably, in a specific embodiment, the vacuum chamber structure of this pressure transducer is after release aperture is opened, first carry out release process, it is freed to remove by sacrifice layer, then physical vapour deposition (PVD) and/or chemical vapour deposition technique deposition cover closing material the pendency contact formation Vacuum Package that when utilizing deposition, cover closing material is formed are utilized in release aperture.
Further preferably; in a specific embodiment; when sacrificial layer material is organic material; the material of this release guard layer is silicon, silicon dioxide, silicon oxynitride, silicon nitride and carborundum or the silicon dioxide of non-stoichiometric, silicon oxynitride, silicon nitride and carborundum, or the above-mentioned material mixed with impurity elements such as boron, phosphorus, carbon or fluorine.
Alternatively and preferably; in a specific embodiment; when sacrificial layer material is silicon materials, the material of this release guard layer is the silicon dioxide of silicon dioxide, silicon oxynitride or non-stoichiometric, silicon oxynitride or the above-mentioned material mixed with impurity elements such as boron, phosphorus, carbon or fluorine.
Alternatively and preferably, when sacrificial layer material is SiO2Time, the material of this release guard layer is silicon nitride, carborundum or and the silicon-rich silicon nitride of non-stoichiometric and Silicon-rich carborundum, or the above-mentioned material mixed with impurity elements such as boron, phosphorus, carbon or fluorine.
It is further preferred that in a specific embodiment, cover closing material is SiO2, silicon nitride, carborundum or and the above-mentioned material of non-stoichiometric, or the above-mentioned material mixed with impurity elements such as H, boron, phosphorus, carbon or fluorine.
<the second preferred embodiment>
Fig. 4 illustrates the flow chart of the preferably pressure transducer manufacture method of preferred embodiment of second according to the present invention. Further, Fig. 5 illustrates the profile of an intermediate structure in the manufacture process of the pressure transducer of the embodiment of the present invention that the pressure transducer manufacture method according to Fig. 4 obtains.
In conjunction with, shown in Fig. 4 and Fig. 5, including step as described below according to the pressure transducer manufacture method of second preferred embodiment of the invention.
In the step s 21, deposited top layer via layer medium and top layer metallic layer medium, and form top layer through hole and top-level metallic is Trench patterning.
Specifically, in a specific embodiment, in the described step sequentially forming top layer via hole image and top-level metallic layer pattern on substrate from bottom to top, it is initially formed and utilizes dual damascene process to form the through hole and the metallic pattern that are arranged in dielectric material, then depositing Ti TiN or Ta TaN or TaN Ta layer, deposited top layer Ni metal subsequently, and utilize the method for chemically mechanical polishing to form the metallization of top layer through hole and top-level metallic figure.
Specifically, in a concrete example, deposited top layer via layer medium SiO first on a silicon substrate2With top layer metallic layer medium SiO2(silicon dioxide), the thickness of this two layer medium such as 9000A altogether; And utilize dual damascene process (such as can adopt first complete opening dual damascene process at quarter) to be initially formed top layer through hole by chemical wet etching and top-level metallic is Trench patterning. In Damascus technics or dual damascene process, first borehole or groove, refill metal and realize graphical by cmp (CMP) and metallize.
But, other scheme can also be adopted to perform this step, such as, alternatively, in another specific embodiment, in the described step sequentially forming top layer via hole image and top-level metallic layer pattern on substrate from bottom to top, this step can also utilize the method for single Damascus technics to be initially formed the metallization of top layer via hole image simultaneously, is forming the graphical of top-level metallic figure again; Utilize Damascus technics to also achieve the planarization of silicon chip surface simultaneously, be conducive to increasing the process window of subsequent technique.
In step S22, form top-level metallic and top layer through-hole structure.
Specifically, first such as by physical vapour deposition (PVD) (PVD) deposit diffusion barriers TaN Ta (such as TaN thickness respectively 150A and the 250A of Ta) and Cu inculating crystal layer (such as thickness is 2000A), deposit Ni metal metal level (such as thickness is 7000A) by inductively coupled plasma (ECP), and realized its top-level metallic and top layer through-hole structure by Cu-CMP. Dielectric material silicon dioxide SiO it is filled with between top layer through hole2��
Further, top-level metallic has inter-metal medium 11.
In step S23, depositing adhesion layer 10, adhesion layer 10 is such as thick for 1000A TEOS (tetraethyl orthosilicate) and/or silicon dioxide SiO2; It practice, this adhesion layer simultaneously works as the effect of release guard layer, namely this adhesion layer can also additionally function as release guard layer. Further, adhesion layer 10 is additionally operable to strengthen the contact of sacrifice layer and other materials.
In step s 24, in top layer metallic layer and top layer metallic layer overburden sacrifice layer 9, for instance long-pending sacrifice layer 9 thickness is 2um; Specifically, available chemical vapour deposition (CVD) (CVD) deposits sacrificial silicon layer 9. This sacrificial layer material is the Organic substances such as polyimides (Polymide) or silicon or SiO2. Deposition of sacrificial layer non-crystalline silicon.
Release guard layer must be deposited before deposition of sacrificial layer, damaged to protect subsurface material (specifically copper) gas will not be released when release. And, along with the carrying out of technique, subsequent technique also can deposit release guard layer; The release guard layer of different levels can be published in instalments together, plays the effect of protection dependency structure.
In step s 25, sacrifice layer 9 forms support slot structure. Specifically, Fig. 6 illustrates the top view of pressure transducer according to an embodiment of the invention, and this figure is mainly used in illustrating the layout of support slot 5, and namely this support slot 5 is circular layout in device periphery.
In step S26, in support slot and sacrifice layer 9 upper surface deposition release guard layer 6; Wherein, the material of release guard layer is such as thickness is the SiO of 1500A2��
In step s 27, the sacrificial layer material in support slot is formed contact hole or contact groove 4, namely realizes the graphical of contact hole 4, to realize contacting of electrode of metal and substrate.
In step S28, deposit metal, and realize the graphical of electrode of metal, to form electrode of metal 7. Wherein, the metal Ta of the material of metal electrode to be such as thickness be 1000A. Preferably, the electrode of metal in contact hole contacts with top layer metallic layer.
In step S29, further precipitation release guard layer 6 to realize it graphical. Equally, the material of release guard layer 6 is such as thickness is the SiO of 1500A2. The actual microbridge hanging structure in products application can be a unit, it is also possible to be a lot of unit (array format). The patterned effect of release guard layer 6 herein is in that the individual unit in definition individual unit or array. Local needs between unit and outside unit are release guard layer open, in order to remove sacrifice layer when release, spill top-level metallic, in order to be used for realizing the functions such as pad PAD.
Thus, just obtain after step S29 the embodiment of the present invention illustrated in fig. 5 pressure transducer manufacture process in the profile of an intermediate structure.
In step s 30, it is achieved release aperture 8 graphical, release aperture 8 is namely formed. Specifically, for instance, in a specific embodiment, can pass through to utilize xenon difluoride (XeF2) release process, remove sacrificial silicon layer. Preferably, release aperture is arranged in the release guard layer above sacrifice layer.
In step S31, carry out release process, and deposit cover closing material (not shown), it is achieved pressure sensor structure. Cover closing material is such as thickness is the SiO of 1000A2��
So, in above-mentioned pressure transducer manufacture method, Tong Hou road compatible technology making top layer through hole and top-level metallic structure is make use of to realize the bottom electrode of pressure transducer, and realize silicon chip surface planarization, utilize electrode of metal to realize electrode on pressure transducer, and utilize support slot and release aperture and cover closing material to realize without post vacuum structure.
With reference now to an intermediate structure in the manufacture process of the pressure transducer shown in Fig. 5, profile. This structure includes: substrate 1; Top layer through hole 2; Top layer metallic layer 3 (after being deposited on this metallic layer graphic on top layer via layer, it is possible to achieve the bottom electrode of capacitance pressure transducer, and with the contacting of electrode of metal 7); Sacrifice layer 9 (namely forming the hanging structure of sensor after sacrifice layer 9 release); Support slot 5 (for supporting whole pressure chamber vacuum structure without post); Release guard layer 6 (being used for protecting upper electrode material); Electrode of metal 7 (for realizing the upper electrode of capacitance pressure transducer); Release guard layer (being used for protecting upper electrode material) in electrode of metal 7; Release aperture 8 (for releasing sacrificial layer material) and adhesion layer 10.
In an intermediate structure in the manufacture process of the pressure transducer of the embodiment of the present invention illustrated in fig. 5, top layer through hole and top layer metallic layer are made, thus achieve the bottom electrode of pressure transducer, and utilize electrode of metal to realize electrode on pressure transducer, utilize support slot and release aperture and cover closing material to realize without post vacuum structure.
Preferably, in a specific embodiment, substrate sequentially form from bottom to top in the step of top layer via hole image and top-level metallic layer pattern, the through hole and the metallic pattern that are arranged in dielectric material is formed first with dual damascene process, then deposition Ta TaN or TaN Ta layer, deposit Ni metal subsequently, and utilize the method for chemically mechanical polishing to form the metallization of top layer through hole and top-level metallic figure; Or sequentially form in the step of top layer via hole image and top-level metallic layer pattern on substrate from bottom to top, utilize the method for single Damascus technics first to realize the graphical of top layer through hole and metallization, then realize the graphical of top-level metallic figure and metallization; Utilize Damascus technics to also achieve the planarization of silicon chip surface, to increase the process window of subsequent technique simultaneously.
Further, formed top layer via hole image metallization after perform deposited top layer metal step, in the step of deposited top layer metal, be initially formed Ti TiN or Ta TaN or TaN Ta layer, subsequently deposited top layer metal. Wherein realize it by the Damascus technics that after first digging groove, filled gold belongs to and CMP polishes graphical. Meanwhile, its top layer through hole and top-level metallic structure can be realized by dual damascene process simultaneously. This top-level metallic can be used to realize lower metal electrode function and pad PAD function.
It is further preferred that in a specific embodiment, the support slot figure of this pressure transducer surrounds the bottom electrode figure of pressure transducer completely, utilizes this support slot and follow-up release guard layer, release aperture formation vacuum chamber structure; The electrode of metal of this pressure transducer is released protective layer and surrounds, and avoids being subject to the damage of release process with shield electrode material.
It is further preferred that in a specific embodiment, this electrode of metal is Ti electrode, tantalum electrode, the titanium nitride of stacked on top of one another and the tantalum of Ti electrode or stacked on top of one another and tantalum nitride electrode. This electrode of metal is connected with circuit by contact hole 4; The contact hole 4 of this pressure transducer can also be contact groove structure.
It is further preferred that in a specific embodiment, when this release aperture is graphical, sacrifice layer stops, and the depth-to-width ratio of release aperture is more than 1.
Further preferably, in a specific embodiment, the vacuum chamber structure of this pressure transducer is after release aperture is opened, first carry out release process, it is freed to remove by sacrifice layer, then physical vapour deposition (PVD) and/or chemical vapour deposition technique deposition cover closing material the pendency contact formation Vacuum Package that when utilizing deposition, cover closing material is formed are utilized in release aperture.
Further preferably; in a specific embodiment; when sacrificial layer material is organic material; the material of this release guard layer is silicon, silicon dioxide, silicon oxynitride, silicon nitride and carborundum or the silicon dioxide of non-stoichiometric, silicon oxynitride, silicon nitride and carborundum, or the above-mentioned material mixed with impurity elements such as boron, phosphorus, carbon or fluorine.
Alternatively and preferably; in a specific embodiment; when sacrificial layer material is silicon materials, the material of this release guard layer is the silicon dioxide of silicon dioxide, silicon oxynitride or non-stoichiometric, silicon oxynitride or the above-mentioned material mixed with impurity elements such as boron, phosphorus, carbon or fluorine.
Alternatively and preferably, when sacrificial layer material is SiO2Time, the material of this release guard layer is silicon nitride, carborundum or and the silicon-rich silicon nitride of non-stoichiometric and Silicon-rich carborundum, or the above-mentioned material mixed with impurity elements such as boron, phosphorus, carbon or fluorine.
It is further preferred that in a specific embodiment, cover closing material is SiO2, silicon nitride, carborundum or and the above-mentioned material of non-stoichiometric, or the above-mentioned material mixed with impurity elements such as H, boron, phosphorus, carbon or fluorine.
According to another embodiment of the present invention, the invention still further relates to the pressure transducer that the flow chart according to Fig. 1 or Fig. 4 is fabricated by.
It will be apparent to those skilled in the art that and can without departing from the scope of the invention the present invention be carried out various change and deformation. Described embodiment is merely to illustrate the present invention rather than the restriction present invention; The present invention is not limited to described embodiment, but is defined solely by the appended claims.
Claims (16)
1. a pressure transducer manufacture method, it is characterised in that including:
Substrate sequentially forms top layer via hole image from bottom to top and in order to realize the top-level metallic layer pattern of pressure transducer bottom electrode;
Top layer metallic layer is formed sacrifice layer;
Sacrifice layer is formed the support slot arranged in bottom electrode figure peripheral annular;
Deposition release guard layer;
Release guard layer in support slot is formed contact hole graph;
Deposition electrode of metal layer, and realize the graphical to form electrode of metal of electrode of metal layer, described electrode of metal is connected with top-level metallic layer pattern by contact hole;
Further precipitation release guard layer, and realize release guard layer pattern;
Release guard layer is formed release aperture; And
Complete release process and deposit cover closing material layer, to utilize support slot and the cavity body structure of release guard layer, release aperture formation closing.
2. pressure transducer manufacture method according to claim 1, it is characterized in that, wherein sequentially form in the step of top layer via hole image and top-level metallic layer pattern on substrate from bottom to top, metal in this top layer through hole is Cu or W or Al, its forming method is to be initially formed via hole image, deposit metal again, then pass through and be etched back to or the method for chemically mechanical polishing realizes via metal
And, deposited top layer metal step is performed after forming top layer via hole image, in deposited top layer metal step, be initially formed Ti TiN or Ta TaN or TaN Ta layer, deposited top layer metal subsequently, and after deposited top layer metal, deposit TaN and TiN, to reduce metallic reflection rate when follow-up photoetching; Wherein top-level metallic material is Al or W, and its graphical scheme is to be formed by the metal etch process in road after standard aluminum.
3. pressure transducer manufacture method according to claim 1 and 2, it is characterised in that wherein can include adhesion layer between top layer metallic layer and sacrifice layer, for strengthening the contact of sacrifice layer and other materials.
4. pressure transducer manufacture method according to claim 1, it is characterized in that, wherein in the step sequentially forming top layer via hole image and top-level metallic layer pattern on substrate from bottom to top, metal and top-level metallic in top layer through hole are Cu, and its process implementation method is Damascus technics;
And wherein, after sequentially forming the step of top layer via hole image and top-level metallic layer pattern on substrate from bottom to top, deposit adhesion layer; Sacrifice layer is formed subsequently on top layer metallic layer.
5. pressure transducer manufacture method according to claim 4, it is characterized in that, the processing technology wherein sequentially forming the step employing of top layer via hole image and top-level metallic layer pattern on substrate from bottom to top is single Damascus technics or dual damascene process.
6. the pressure transducer manufacture method according to claim 4 or 5, it is characterized in that, wherein sequentially form in the step of top layer via hole image and top-level metallic layer pattern on substrate from bottom to top, the through hole and the metallic pattern that are arranged in dielectric material is formed first with dual damascene process, then deposition Ta TaN or TaN Ta layer, deposit Ni metal subsequently, and utilize the method for chemically mechanical polishing to form the metallization of top layer through hole and top-level metallic figure; Or
Substrate sequentially forms from bottom to top in the step of top layer via hole image and top-level metallic layer pattern, utilize the method for single Damascus technics first to realize the graphical of top layer through hole and metallization, then realize the graphical of top-level metallic figure and metallization; Utilize Damascus technics to also achieve the planarization of silicon chip surface, to increase the process window of subsequent technique simultaneously.
7. the pressure transducer manufacture method according to claim 4 or 5, it is characterised in that wherein said adhesion layer is additionally operable to strengthen the contact of sacrifice layer and other materials, and described adhesion layer is tetraethyl orthosilicate and/or silicon dioxide.
8. the pressure transducer manufacture method according to claim 1 or 4, it is characterized in that, wherein said electrode of metal is Ti electrode, tantalum electrode, the titanium nitride of stacked on top of one another and the tantalum of Ti electrode or stacked on top of one another and tantalum nitride electrode, and described electrode of metal is connected with circuit by contact hole; Described contact hole is formed in the sacrificial layer material in support slot.
9. the pressure transducer manufacture method according to claim 1 or 4, it is characterised in that when wherein said release aperture is graphical, stops on sacrifice layer, and the depth-to-width ratio of release aperture is more than 1.
10. the pressure transducer manufacture method according to claim 1 or 4, it is characterised in that pressure transducer manufacture method also includes utilizing this support slot and follow-up release guard layer, release aperture formation vacuum chamber structure; And wherein, the electrode of metal of described pressure transducer is released protective layer encirclement.
11. the pressure transducer manufacture method according to claim 1 or 4, it is characterized in that, wherein said complete release process and deposit the step of cover closing material layer and include: after release aperture is opened, first carry out release process, it is freed to remove by sacrifice layer, then physical vapour deposition (PVD) and/or chemical vapour deposition technique deposition cover closing material the pendency contact formation Vacuum Package that when utilizing deposition, cover closing material is formed are utilized in release aperture, thus forming the vacuum chamber structure of pressure transducer.
12. the pressure transducer manufacture method according to claim 1 or 4, it is characterised in that be wherein filled with dielectric material between top layer via hole image.
13. the pressure transducer manufacture method according to claim 1 or 4, it is characterised in that wherein the electrode of metal in contact hole contacts with top layer metallic layer.
14. the pressure transducer manufacture method according to claim 1 or 4, it is characterised in that wherein release aperture is arranged in the release guard layer above sacrifice layer.
15. the pressure transducer manufacture method according to claim 1 or 4, it is characterised in that wherein said pressure transducer manufacture method is used for manufacturing capacitance pressure transducer.
16. the pressure transducer manufactured according to the pressure transducer manufacture method one of claim 1 to 15 Suo Shu.
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| EP2520917A1 (en) * | 2011-05-04 | 2012-11-07 | Nxp B.V. | MEMS Capacitive Pressure Sensor, Operating Method and Manufacturing Method |
| CN102589760B (en) * | 2012-02-27 | 2014-04-16 | 中国科学院苏州纳米技术与纳米仿生研究所 | Minitype capacitance-type mechanical sensor and preparation method thereof |
| CN102798403B (en) * | 2012-08-21 | 2014-10-22 | 江苏物联网研究发展中心 | MEMS (Micro Electro Mechanical System) film capacitive type multi-parameter sensor structure and integrated manufacturing method thereof |
| CN104051229B (en) * | 2013-03-11 | 2017-12-29 | 中芯国际集成电路制造(上海)有限公司 | Passive device manufacturing process and its manufactured passive device are integrated in a kind of copper wiring |
| CN103803487B (en) * | 2014-03-10 | 2016-02-03 | 上海华虹宏力半导体制造有限公司 | The formation method of semiconductor structure |
| CN105439077A (en) * | 2014-06-18 | 2016-03-30 | 上海丽恒光微电子科技有限公司 | Preparation method of pressure sensor |
| CN107973266B (en) * | 2016-10-24 | 2020-07-07 | 中芯国际集成电路制造(上海)有限公司 | MEMS device, preparation method and electronic device |
| CN112985471B (en) * | 2021-04-30 | 2021-11-02 | 深圳市汇顶科技股份有限公司 | Capacitive sensor and manufacturing method thereof |
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