CN102275865A - Pressure transducer and its manufacturing method - Google Patents
Pressure transducer and its manufacturing method Download PDFInfo
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- CN102275865A CN102275865A CN2011101246039A CN201110124603A CN102275865A CN 102275865 A CN102275865 A CN 102275865A CN 2011101246039 A CN2011101246039 A CN 2011101246039A CN 201110124603 A CN201110124603 A CN 201110124603A CN 102275865 A CN102275865 A CN 102275865A
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Abstract
The invention provides a pressure transducer and its manufacturing method. The manufacturing method of the pressure transducer is characterized by comprising the following steps of: successively forming a top through-hole pattern and a top metal-faced pattern from bottom to top on a substrate; forming a sacrificial layer on the top metal layer; forming a support groove in the sacrificial layer; depositing a release protective layer; forming a contact hole pattern in the release protective layer in the support groove; depositing an upper metal electrode layer, and accomplishing the patterning of the upper metal electrode layer to form an upper metal electrode, wherein the upper metal electrode is connected with the top metal-faced pattern by the contact hole; further depositing the release protective layer and accomplishing the patterning of the release protective layer; forming a release hole in the release protective layer; and completing the release technology and depositing a capping material layer.
Description
Technical field
The present invention relates to semiconductor applications, more particularly, the pressure sensor that relates to a kind of pressure sensor manufacture method and obtain according to this pressure sensor manufacture method.
Background technology
That microelectromechanical systems (MEMS) technology has is small, intelligent, can carry out, can be integrated, plurality of advantages such as processing compatibility good, cost is low, so it has begun to be widely used in the numerous areas that comprises the infrared detection technique field.Pressure sensor is a kind of sensor component commonly used, and its operation principle has resistance and electric capacity two classes.Wherein condenser type is more commonly used, is that capacitance variations takes place the capacitance structure that utilizes vacuum chamber to form under pressure, and is transformed into the signal of telecommunication and amplifies processing.
Pressure sensor technology is general and CMOS (complementary metal oxide semiconductors (CMOS)) processing compatibility is poor, so early stage being difficult to realizes producing on a large scale.Because the market demand of MEMS product enlarges gradually, the notion of CMOS-MEMS is proposed by the people gradually in recent years.CMOS-MEMS utilizes CMOS fabrication techniques periphery to read and signal processing circuit, make the structure of sensor and micro mechanical system then on cmos circuit, and the processing compatibility problem is the key of puzzlement CMOS-MEMS technology all the time.
Specifically, pressure sensor generally adopts the body silicon materials to form vacuum chamber at present, is difficult to and the CMOS process compatible; Simultaneously, its vacuum chamber forms by encapsulation technology, and the higher and yield rate of cost can descend a lot because of packaging technology; In addition, the integrated meeting of CMOS-MEMS single-chip proposes more requirements to technology, for example how to solve this key issue of planarization.Therefore, how to provide a kind of CMOS-MEMS single-chip integrated pressure sensor technology, reduce its packaging cost, and increase substantially properties of product and reliability, become the technical problem that industry needs to be resolved hurrily.
Summary of the invention
Therefore, an object of the present invention is to provide a kind of and pressure sensor manufacture method and pressure sensor the CMOS process compatible, and another object of the present invention provide a kind of and pressure sensor manufacture method, pressure sensor the process for copper compatibility.
According to a first aspect of the invention, provide a kind of pressure sensor manufacture method, having comprised: on substrate, formed top layer via hole image and top-level metallic layer pattern from bottom to top successively; On top layer metallic layer, form sacrifice layer; In sacrifice layer, form support slot figure support slot; Deposition release guard layer; Form contact hole graph in the release guard layer in support slot; The plated metal upper electrode layer, and realize the electrode of metal layer graphically to form electrode of metal, described electrode of metal links to each other with the top-level metallic layer pattern by contact hole; Further deposition release guard layer, and realization release guard layer patternization; In the release guard layer, form release aperture; And finish release process and deposit the cover closing material layer.
Preferably, in above-mentioned pressure sensor manufacture method, on substrate, form in the step of top layer via hole image and top-level metallic layer pattern from bottom to top successively, metal in this top layer through hole is Cu or W or Al, its formation method is to form via hole image earlier, plated metal again, the method of passing through back etching or chemically mechanical polishing then realizes via metalization, and, after forming the top layer via hole image, carry out deposited top layer metal step, in deposited top layer metal step, form earlier Ti TiN or Ta TaN or TaN the Ta layer, deposited top layer metal subsequently, and deposit TaN and TiN after the deposited top layer metal is to reduce the metallic reflection rate when the follow-up photoetching; Wherein the top-level metallic material is Al or W, and its graphical scheme is that the metal etch process by road after the standard aluminum forms.
Preferably, in above-mentioned pressure sensor manufacture method, can comprise adhesion layer between top layer metallic layer and the sacrifice layer, be used to strengthen contacting of sacrifice layer and other materials.
Preferably, in above-mentioned pressure sensor manufacture method, forming successively from bottom to top on substrate in the step of top layer via hole image and top-level metallic layer pattern, metal in the top layer through hole and top-level metallic are Cu, and its process implementation method is a Damascus technics; And wherein, after the step that on substrate, forms top layer via hole image and top-level metallic layer pattern from bottom to top successively, deposit adhesion layer; On top layer metallic layer, form sacrifice layer subsequently.
Preferably, in above-mentioned pressure sensor manufacture method, the manufacture craft that forms the step employing of top layer via hole image and top-level metallic layer pattern on substrate from bottom to top successively is single Damascus technics or dual damascene process.
Preferably, in above-mentioned pressure sensor manufacture method, on substrate, form in the step of top layer via hole image and top-level metallic layer pattern from bottom to top successively, utilize dual damascene process to form through hole and the metallic pattern that is arranged in dielectric material earlier, deposit then Ta TaN or TaN the Ta layer, plated metal Cu subsequently, and utilize the method for chemically mechanical polishing to form the metallization of top layer through hole and top-level metallic figure; Perhaps on substrate, form successively from bottom to top in the step of top layer via hole image and top-level metallic layer pattern, utilize the method graphical and metallization of realization top layer through hole earlier of single Damascus technics, realize the graphical and metallization of top-level metallic figure again; Utilize Damascus technics also to realize the planarization of silicon chip surface simultaneously, to increase the process window of subsequent technique.
Preferably, in above-mentioned pressure sensor manufacture method, described adhesion layer also is used to strengthen contacting of sacrifice layer and other materials, and described adhesion layer is ethyl orthosilicate and/or silica.
Preferably, in above-mentioned pressure sensor manufacture method, described electrode of metal is the titanium nitride of titanium electrode, tantalum electrode, stacked on top of one another and the tantalum and the tantalum nitride electrode of titanium electrode or stacked on top of one another, and described electrode of metal is connected with circuit by contact hole; Described contact hole is formed in the sacrificial layer material in the support slot.
Preferably, in above-mentioned pressure sensor manufacture method, when described release aperture is graphical, on sacrifice layer, stop, and the depth-to-width ratio of release aperture is greater than 1.
Preferably, in above-mentioned pressure sensor manufacture method, the support slot figure of described pressure sensor arranges in the metal bottom electrode figure peripheral annular of pressure sensor, and the pressure sensor manufacture method also comprises and utilizes this support slot and follow-up release guard layer, release aperture to form the vacuum chamber structure; And wherein, the electrode of metal of described pressure sensor is released the protective layer encirclement.
Preferably, in above-mentioned pressure sensor manufacture method, the described step of finishing release process and depositing the cover closing material layer comprises: after release aperture is opened, carry out release process earlier, sacrifice layer is discharged removal, utilize physical vapour deposition (PVD) and/or chemical vapour deposition technique to deposit cover closing material then, and utilize the contact formation Vacuum Package of dangling that cover closing material forms in release aperture when depositing, thereby form the vacuum chamber structure of pressure sensor.
Preferably, in above-mentioned pressure sensor manufacture method, filled dielectric material between the top layer via hole image.
Preferably, in above-mentioned pressure sensor manufacture method, the electrode of metal in the contact hole contacts with top layer metallic layer.
Preferably, in above-mentioned pressure sensor manufacture method, release aperture is arranged in the release guard layer of sacrifice layer top.
Preferably, in above-mentioned pressure sensor manufacture method, described pressure sensor manufacture method is used to make capacitance pressure transducer.
A kind of pressure sensor of manufacturing of making according to the described pressure sensor manufacture method of first aspect present invention is provided according to a second aspect of the invention.
Owing to adopted according to the described pressure sensor manufacture method of first aspect present invention, therefore, it will be appreciated by persons skilled in the art that according to the pressure sensor of second aspect present invention and can realize the useful technique effect that pressure sensor manufacture method according to a first aspect of the invention can realize equally.
Description of drawings
In conjunction with the accompanying drawings, and, will more easily more complete understanding be arranged and more easily understand its attendant advantages and feature the present invention by with reference to following detailed, wherein:
Fig. 1 shows the flow chart according to the pressure sensor manufacture method of first preferred embodiment of the invention;
Fig. 2 shows the profile according to the intermediate structure in the pressure sensor manufacture process of first preferred embodiment of the invention; And
Fig. 3 shows the vertical view of pressure sensor according to an embodiment of the invention.
Fig. 4 shows the flow chart according to the pressure sensor manufacture method of second preferred embodiment of the invention;
Fig. 5 shows the profile of the pressure sensor intermediate structure that obtains in the pressure sensor manufacture method process according to second preferred embodiment of the invention; And
Fig. 6 shows the vertical view of pressure sensor according to an embodiment of the invention.
Need to prove that accompanying drawing is used to illustrate the present invention, and unrestricted the present invention.And in the accompanying drawing, identical or similar elements indicates identical or similar label.
The specific embodiment
In order to make content of the present invention clear and understandable more, content of the present invention is described in detail below in conjunction with specific embodiments and the drawings.
＜the first preferred embodiment 〉
Fig. 1 shows the flow chart of pressure sensor manufacture method according to a first advantageous embodiment of the invention.And Fig. 2 shows the profile of an intermediate structure in the manufacture process of pressure sensor of the embodiment of the invention that obtains according to pressure sensor manufacture method shown in Figure 1.
In conjunction with illustrated in figures 1 and 2, comprise step as described below according to the pressure sensor manufacture method of first preferred embodiment of the invention.
In step S1, go up formation top layer through hole 2 structures at substrate 1 (for example silicon substrate); For example in a specific embodiment, on silicon substrate 1, formed the through-hole structure that is filled with tungsten (W) or aluminium (Al).Preferably, filled dielectric material between the top layer through hole.This dielectric material for example is insulating materials or semi-conducting material, for example silica SiO
2
In step S2, deposited top layer metal level 3, and realize that it is graphical; For example, but deposited top layer Al metal level and realize that it is graphical.
In step S3, in top layer metallic layer and top layer metallic layer top deposition of sacrificial layer 9; Specifically, can utilize chemical vapor deposition (CVD) depositing silicon sacrifice layer 9.This sacrificial layer material is polyimides organic matter or silicon or SiO such as (Polymide)
2
In step S4, in sacrifice layer 9, form the support slot structure.Specifically, Fig. 3 shows the vertical view of pressure sensor according to an embodiment of the invention, and this figure is mainly used in the layout that support slot 5 is shown, and promptly this support slot 5 is circular layout in device periphery.
In step S5, in support slot and sacrifice layer 9 upper surfaces depositions release guard layer 6; Wherein, the material of release guard layer for example is SiO
2
In step S6, form contact hole or contact groove 4 in the sacrificial layer material in support slot, promptly realize the graphical of contact hole 4, to realize contacting of electrode of metal and substrate.
In step S7, plated metal, and realize the graphical of electrode of metal, to form electrode of metal 7.Wherein, the material of metal electrode for example is metal Ta.Preferably, the electrode of metal in the contact hole contacts with top layer metallic layer.
In step S8, further deposit release guard layer 6 and realize that it is graphical.Equally, the material of release guard layer 6 for example is SiO
2Microbridge hanging structure during actual product is used can be a unit, also can be a lot of unit (array format).The patterned effect of release guard layer 6 herein is to define the individual unit in individual unit or the array.The place of outside, between the unit and unit need so that remove sacrifice layer when discharging, spill top-level metallic to the release guard layer open, for use in functions such as realization pad PAD.
Thus, after step S8, just obtained the profile of an intermediate structure in the manufacture process of pressure sensor of the embodiment of the invention illustrated in fig. 2.
In step S9, realize the graphical of release aperture 8, promptly form release aperture 8.Specifically, for example, in a specific embodiment, can be by utilizing xenon difluoride (XeF
2) release process, remove sacrificial silicon layer.Preferably, release aperture is arranged in the release guard layer of sacrifice layer top.
In step S10, carry out release process, and deposition cover closing material (not shown), realize pressure sensor structure.Cover closing material for example is SiO
2
With reference now to an intermediate structure in the manufacture process of pressure sensor shown in Figure 2, profile.This structure comprises: substrate 1; Top layer through hole 2; Top layer metallic layer 3 (after being deposited on this metallic layer graphic on the top layer via layer, can realize the bottom electrode of capacitance pressure transducer,, and with the contacting of electrode of metal 7); Sacrifice layer 9 (promptly forming the hanging structure of sensor after sacrifice layer 9 releases); Support slot 5 (be used to not have post and support whole pressure chamber vacuum structure); Release guard layer 6 (being used to protect upper electrode material); Electrode of metal 7 (being used to realize the top electrode of capacitance pressure transducer); Release guard layer on the electrode of metal 7 (being used to protect upper electrode material); And release aperture 8 (being used for the releasing sacrificial layer material).
In the intermediate structure in the manufacture process of the pressure sensor of the embodiment of the invention illustrated in fig. 2, top layer through hole and top layer metallic layer have been made, realized the bottom electrode of pressure sensor thus, and utilize electrode of metal to realize the pressure sensor top electrode, utilize support slot and release aperture and cover closing material to realize no post vacuum structure.
Preferably, in a specific embodiment, the metal in this top layer through hole is Cu or W or Al, and its formation method is to form earlier via hole image, and plated metal again pass through back the method realization via metalization of etching or chemically mechanical polishing then.
And, after forming the top layer via hole image, carry out deposited top layer metal step, in deposited top layer metal step, form earlier Ti TiN or Ta TaN or TaN the Ta layer, deposited top layer metal subsequently, and after the deposited top layer metal, deposit TaN and TiN, to reduce the metallic reflection rate when the follow-up photoetching; Wherein the top-level metallic material is Al or W, and its graphical scheme is that the metal etch process by road after the standard aluminum forms.This top-level metallic can be used for realizing metal bottom electrode function and pad PAD function.
Further preferably, in a specific embodiment, can comprise adhesion layer between top layer metallic layer and the sacrifice layer, be used to strengthen contacting of sacrifice layer and other materials; The material of this adhesion layer is based on ethyl orthosilicate (TEOS) or SiH
4Silica.
Further preferably, in a specific embodiment, the support slot figure of this pressure sensor surrounds the bottom electrode figure of pressure sensor fully, utilizes this support slot and follow-up release guard layer, release aperture to form the vacuum chamber structure; The electrode of metal of this pressure sensor is released protective layer and surrounds, and avoids being subjected to the damage of release process with the guard electrode material.
Further preferably, in a specific embodiment, this electrode of metal is the titanium nitride of titanium electrode, tantalum electrode, stacked on top of one another and the tantalum and the tantalum nitride electrode of titanium electrode or stacked on top of one another.This electrode of metal is connected with circuit by contact hole 4; The contact hole 4 of this pressure sensor also can be contact groove structure.
Further preferably, in a specific embodiment, when this release aperture is graphical, on sacrifice layer, stop, and the depth-to-width ratio of release aperture is greater than 1.
Further preferably, in a specific embodiment, the vacuum chamber structure of this pressure sensor is after release aperture is opened, carry out release process earlier, sacrifice layer is discharged removal, utilize physical vapour deposition (PVD) and/or chemical vapour deposition technique to deposit cover closing material then, and utilize the contact formation Vacuum Package of dangling that cover closing material forms in release aperture when depositing.
Further preferably; in a specific embodiment; when sacrificial layer material is the organic matter material; the material of this release guard layer is silica, silicon oxynitride, silicon nitride and the carborundum of silicon, silica, silicon oxynitride, silicon nitride and carborundum or non-stoichiometric, perhaps is mixed with the above-mentioned material of impurity elements such as boron, phosphorus, carbon or fluorine.
Alternatively and preferably; in a specific embodiment; when sacrificial layer material was silicon materials, the material of this release guard layer was silica, the silicon oxynitride of silica, silicon oxynitride or non-stoichiometric or the above-mentioned material that is mixed with impurity elements such as boron, phosphorus, carbon or fluorine.
Alternatively and preferably, when sacrificial layer material is SiO
2The time, the material of this release guard layer be silicon nitride, carborundum or and the silicon-rich silicon nitride and the Silicon-rich carborundum of non-stoichiometric, perhaps be mixed with the above-mentioned material of impurity elements such as boron, phosphorus, carbon or fluorine.
Further preferably, in a specific embodiment, cover closing material is SiO
2, silicon nitride, carborundum or and the above-mentioned material of non-stoichiometric, perhaps be mixed with the above-mentioned material of impurity elements such as H, boron, phosphorus, carbon or fluorine.
＜the second preferred embodiment 〉
Fig. 4 shows the flow chart according to the pressure sensor manufacture method of the of the present invention second preferred preferred embodiment.And Fig. 5 shows the profile of an intermediate structure in the manufacture process of pressure sensor of the embodiment of the invention that obtains according to pressure sensor manufacture method shown in Figure 4.
In conjunction with Fig. 4 and shown in Figure 5, comprise step as described below according to the pressure sensor manufacture method of second preferred embodiment of the invention.
In step S21, deposited top layer via layer medium and top layer metallic layer medium, and form top layer through hole and top-level metallic groove figureization.
Specifically, in a specific embodiment, in the described step that on substrate, forms top layer via hole image and top-level metallic layer pattern from bottom to top successively, form earlier and utilize dual damascene process to form through hole and the metallic pattern that is arranged in dielectric material, then depositing Ti TiN or Ta TaN or TaN the Ta layer, deposited top layer metal Cu subsequently, and utilize the method for chemically mechanical polishing to form the metallization of top layer through hole and top-level metallic figure.
Specifically, in a concrete example, deposited top layer via layer medium SiO on silicon substrate at first
2With top layer metallic layer medium SiO
2(silica), the thickness of this two layer medium is 9000A altogether for example; And utilize dual damascene process (for example can adopt and carve full hole dual damascene process earlier) to form top layer through hole and top-level metallic groove figureization earlier by chemical wet etching.In Damascus technics or dual damascene process, first borehole or groove recharge metal and realize graphical and metallization by cmp (CMP).
Yet, also can adopt other scheme to carry out this step, for example, alternatively, in another specific embodiment, in the described step that forms top layer via hole image and top-level metallic layer pattern on substrate from bottom to top successively, this step also can utilize the method for single Damascus technics to form the metallization of top layer via hole image earlier simultaneously, is forming the graphical of top-level metallic figure again; Utilize Damascus technics also to realize the planarization of silicon chip surface simultaneously, help to increase the process window of subsequent technique.
In step S22, form top-level metallic and top layer through-hole structure.
Specifically, at first for example by physical vapor deposition (PVD) deposition diffusion impervious layer TaN Ta (for example TaN the thickness of Ta be respectively 150A and 250A) and Cu inculating crystal layer (for example thickness is 2000A), by inductively coupled plasma (ECP) plated metal Cu metal level (for example thickness is 7000A), and realize its top-level metallic and top layer through-hole structure by Cu-CMP.Filled dielectric material silica SiO between the top layer through hole
2
And top-level metallic has inter-metal medium 11.
In step S23, deposition adhesion layer 10, adhesion layer 10 is TEOS that for example 1000A is thick (ethyl orthosilicate) and/or silica SiO
2In fact, this adhesion layer plays the effect of release guard layer simultaneously, and promptly this adhesion layer also can be extraly as the release guard layer.And adhesion layer 10 also is used to strengthen contacting of sacrifice layer and other materials.
In step S24, with top layer metallic layer top deposition of sacrificial layer 9, for example long-pending sacrifice layer 9 thickness are 2um in top layer metallic layer; Specifically, can utilize chemical vapor deposition (CVD) depositing silicon sacrifice layer 9.This sacrificial layer material is polyimides organic matter or silicon or SiO such as (Polymide)
2The deposition of sacrificial layer non-crystalline silicon.
Must deposit the release guard layer before the deposition of sacrificial layer, when discharging, can not be released gas with protection subsurface material (copper specifically) and be damaged.And along with the carrying out of technology, subsequent technique also can deposit the release guard layer; The release guard layer of different levels can be published in instalments together, plays the effect of protection dependency structure.
In step S25, in sacrifice layer 9, form the support slot structure.Specifically, Fig. 6 shows the vertical view of pressure sensor according to an embodiment of the invention, and this figure is mainly used in the layout that support slot 5 is shown, and promptly this support slot 5 is circular layout in device periphery.
In step S26, in support slot and sacrifice layer 9 upper surfaces depositions release guard layer 6; Wherein, the material of release guard layer for example is that thickness is the SiO of 1500A
2
In step S27, form contact hole or contact groove 4 in the sacrificial layer material in support slot, promptly realize the graphical of contact hole 4, to realize contacting of electrode of metal and substrate.
In step S28, plated metal, and realize the graphical of electrode of metal, to form electrode of metal 7.Wherein, the material of metal electrode for example is that thickness is the metal Ta of 1000A.Preferably, the electrode of metal in the contact hole contacts with top layer metallic layer.
In step S29, further deposit release guard layer 6 and realize that it is graphical.Equally, the material of release guard layer 6 for example is that thickness is the SiO of 1500A
2Microbridge hanging structure during actual product is used can be a unit, also can be a lot of unit (array format).The patterned effect of release guard layer 6 herein is to define the individual unit in individual unit or the array.The place of outside, between the unit and unit need so that remove sacrifice layer when discharging, spill top-level metallic to the release guard layer open, for use in functions such as realization pad PAD.
Thus, after step S29, just obtained the profile of an intermediate structure in the manufacture process of pressure sensor of the embodiment of the invention illustrated in fig. 5.
In step S30, realize the graphical of release aperture 8, promptly form release aperture 8.Specifically, for example, in a specific embodiment, can be by utilizing xenon difluoride (XeF
2) release process, remove sacrificial silicon layer.Preferably, release aperture is arranged in the release guard layer of sacrifice layer top.
In step S31, carry out release process, and deposition cover closing material (not shown), realize pressure sensor structure.Cover closing material for example is that thickness is the SiO of 1000A
2
Like this, in above-mentioned pressure sensor manufacture method, utilized road compatible technology behind the copper to make the bottom electrode that top layer through hole and top-level metallic structure realize pressure sensor, and realization silicon chip surface planarization, utilize electrode of metal to realize the pressure sensor top electrode, and utilize support slot and release aperture and cover closing material to realize no post vacuum structure.
With reference now to an intermediate structure in the manufacture process of pressure sensor shown in Figure 5, profile.This structure comprises: substrate 1; Top layer through hole 2; Top layer metallic layer 3 (after being deposited on this metallic layer graphic on the top layer via layer, can realize the bottom electrode of capacitance pressure transducer,, and with the contacting of electrode of metal 7); Sacrifice layer 9 (promptly forming the hanging structure of sensor after sacrifice layer 9 releases); Support slot 5 (be used to not have post and support whole pressure chamber vacuum structure); Release guard layer 6 (being used to protect upper electrode material); Electrode of metal 7 (being used to realize the top electrode of capacitance pressure transducer); Release guard layer on the electrode of metal 7 (being used to protect upper electrode material); Release aperture 8 (being used for the releasing sacrificial layer material) and adhesion layer 10.
In the intermediate structure in the manufacture process of the pressure sensor of the embodiment of the invention illustrated in fig. 5, top layer through hole and top layer metallic layer have been made, realized the bottom electrode of pressure sensor thus, and utilize electrode of metal to realize the pressure sensor top electrode, utilize support slot and release aperture and cover closing material to realize no post vacuum structure.
Preferably, in a specific embodiment, on substrate, form in the step of top layer via hole image and top-level metallic layer pattern from bottom to top successively, utilize dual damascene process to form through hole and the metallic pattern that is arranged in dielectric material earlier, deposit then Ta TaN or TaN the Ta layer, plated metal Cu subsequently, and utilize the method for chemically mechanical polishing to form the metallization of top layer through hole and top-level metallic figure; Perhaps on substrate, form successively from bottom to top in the step of top layer via hole image and top-level metallic layer pattern, utilize the method graphical and metallization of realization top layer through hole earlier of single Damascus technics, realize the graphical and metallization of top-level metallic figure again; Utilize Damascus technics also to realize the planarization of silicon chip surface simultaneously, to increase the process window of subsequent technique.
And, after the metallization that forms the top layer via hole image, carry out deposited top layer metal step, in the step of deposited top layer metal, earlier formation Ti TiN or Ta TaN or TaN Ta layer, deposited top layer metal subsequently.Wherein realize that by the Damascus technics that filled gold behind the first ditching groove belongs to and CMP polishes it is graphical.Simultaneously, its top layer through hole and top-level metallic structure can realize simultaneously by dual damascene process.This top-level metallic can be used for realizing metal bottom electrode function and pad PAD function.
Further preferably, in a specific embodiment, the support slot figure of this pressure sensor surrounds the bottom electrode figure of pressure sensor fully, utilizes this support slot and follow-up release guard layer, release aperture to form the vacuum chamber structure; The electrode of metal of this pressure sensor is released protective layer and surrounds, and avoids being subjected to the damage of release process with the guard electrode material.
Further preferably, in a specific embodiment, this electrode of metal is the titanium nitride of titanium electrode, tantalum electrode, stacked on top of one another and the tantalum and the tantalum nitride electrode of titanium electrode or stacked on top of one another.This electrode of metal is connected with circuit by contact hole 4; The contact hole 4 of this pressure sensor also can be contact groove structure.
Further preferably, in a specific embodiment, when this release aperture is graphical, on sacrifice layer, stop, and the depth-to-width ratio of release aperture is greater than 1.
Further preferably, in a specific embodiment, the vacuum chamber structure of this pressure sensor is after release aperture is opened, carry out release process earlier, sacrifice layer is discharged removal, utilize physical vapour deposition (PVD) and/or chemical vapour deposition technique to deposit cover closing material then, and utilize the contact formation Vacuum Package of dangling that cover closing material forms in release aperture when depositing.
Further preferably; in a specific embodiment; when sacrificial layer material is the organic matter material; the material of this release guard layer is silica, silicon oxynitride, silicon nitride and the carborundum of silicon, silica, silicon oxynitride, silicon nitride and carborundum or non-stoichiometric, perhaps is mixed with the above-mentioned material of impurity elements such as boron, phosphorus, carbon or fluorine.
Alternatively and preferably; in a specific embodiment; when sacrificial layer material was silicon materials, the material of this release guard layer was silica, the silicon oxynitride of silica, silicon oxynitride or non-stoichiometric or the above-mentioned material that is mixed with impurity elements such as boron, phosphorus, carbon or fluorine.
Alternatively and preferably, when sacrificial layer material is SiO
2The time, the material of this release guard layer be silicon nitride, carborundum or and the silicon-rich silicon nitride and the Silicon-rich carborundum of non-stoichiometric, perhaps be mixed with the above-mentioned material of impurity elements such as boron, phosphorus, carbon or fluorine.
Further preferably, in a specific embodiment, cover closing material is SiO
2, silicon nitride, carborundum or and the above-mentioned material of non-stoichiometric, perhaps be mixed with the above-mentioned material of impurity elements such as H, boron, phosphorus, carbon or fluorine.
According to another embodiment of the present invention, the invention still further relates to the pressure sensor that forms according to Fig. 1 or flow chart manufacturing shown in Figure 4.
It will be apparent to those skilled in the art that and to carry out various changes and distortion to the present invention without departing from the scope of the invention.Described embodiment only is used to illustrate the present invention, rather than restriction the present invention; The present invention is not limited to described embodiment, but only is defined by the following claims.
Claims (16)
1. pressure sensor manufacture method is characterized in that comprising:
On substrate, form top layer via hole image and top-level metallic layer pattern from bottom to top successively;
On top layer metallic layer, form sacrifice layer;
In sacrifice layer, form support slot;
Deposition release guard layer;
Form contact hole graph in the release guard layer in support slot;
The plated metal upper electrode layer, and realize the electrode of metal layer graphically to form electrode of metal, described electrode of metal links to each other with the top-level metallic layer pattern by contact hole;
Further deposition release guard layer, and realization release guard layer patternization;
In the release guard layer, form release aperture; And
Finish release process and deposit the cover closing material layer.
2. pressure sensor manufacture method according to claim 1, it is characterized in that, wherein on substrate, form in the step of top layer via hole image and top-level metallic layer pattern from bottom to top successively, metal in this top layer through hole is Cu or W or Al, its formation method is to form via hole image earlier, plated metal again, the method for passing through back etching or chemically mechanical polishing then realizes via metalization
And, after forming the top layer via hole image, carry out deposited top layer metal step, in deposited top layer metal step, form earlier Ti TiN or Ta TaN or TaN the Ta layer, deposited top layer metal subsequently, and after the deposited top layer metal, deposit TaN and TiN, to reduce the metallic reflection rate when the follow-up photoetching; Wherein the top-level metallic material is Al or W, and its graphical scheme is that the metal etch process by road after the standard aluminum forms.
3. pressure sensor manufacture method according to claim 1 and 2 is characterized in that, wherein can comprise adhesion layer between top layer metallic layer and the sacrifice layer, is used to strengthen contacting of sacrifice layer and other materials.
4. pressure sensor manufacture method according to claim 1, it is characterized in that, wherein forming successively from bottom to top on substrate in the step of top layer via hole image and top-level metallic layer pattern, metal in the top layer through hole and top-level metallic are Cu, and its process implementation method is a Damascus technics;
And wherein, after the step that on substrate, forms top layer via hole image and top-level metallic layer pattern from bottom to top successively, deposit adhesion layer; On top layer metallic layer, form sacrifice layer subsequently.
5. pressure sensor manufacture method according to claim 4, it is characterized in that the manufacture craft that wherein forms the step employing of top layer via hole image and top-level metallic layer pattern on substrate from bottom to top successively is single Damascus technics or dual damascene process.
6. according to claim 4 or 5 described pressure sensor manufacture methods, it is characterized in that, wherein on substrate, form in the step of top layer via hole image and top-level metallic layer pattern from bottom to top successively, utilize dual damascene process to form through hole and the metallic pattern that is arranged in dielectric material earlier, deposit then Ta TaN or TaN the Ta layer, plated metal Cu subsequently, and utilize the method for chemically mechanical polishing to form the metallization of top layer through hole and top-level metallic figure; Perhaps
On substrate, form successively from bottom to top in the step of top layer via hole image and top-level metallic layer pattern, utilize the method graphical and metallization of realization top layer through hole earlier of single Damascus technics, realize the graphical and metallization of top-level metallic figure again; Utilize Damascus technics also to realize the planarization of silicon chip surface simultaneously, to increase the process window of subsequent technique.
7. according to claim 4 or 5 described pressure sensor manufacture methods, it is characterized in that wherein said adhesion layer also is used to strengthen contacting of sacrifice layer and other materials, and described adhesion layer is ethyl orthosilicate and/or silica.
8. according to claim 1 or 4 described pressure sensor manufacture methods, it is characterized in that, wherein said electrode of metal is the titanium nitride of titanium electrode, tantalum electrode, stacked on top of one another and the tantalum and the tantalum nitride electrode of titanium electrode or stacked on top of one another, and described electrode of metal is connected with circuit by contact hole; Described contact hole is formed in the sacrificial layer material in the support slot.
9. according to claim 1 or 4 described pressure sensor manufacture methods, it is characterized in that, when wherein said release aperture is graphical, on sacrifice layer, stop, and the depth-to-width ratio of release aperture is greater than 1.
10. according to claim 1 or 4 described pressure sensor manufacture methods, it is characterized in that, the support slot figure of wherein said pressure sensor arranges in the metal bottom electrode figure peripheral annular of pressure sensor, and the pressure sensor manufacture method also comprises and utilizes this support slot and follow-up release guard layer, release aperture to form the vacuum chamber structure; And wherein, the electrode of metal of described pressure sensor is released the protective layer encirclement.
11. according to claim 1 or 4 described pressure sensor manufacture methods, it is characterized in that, the wherein said step of finishing release process and depositing the cover closing material layer comprises: after release aperture is opened, carry out release process earlier, sacrifice layer is discharged removal, utilize physical vapour deposition (PVD) and/or chemical vapour deposition technique to deposit cover closing material then, and utilize the contact formation Vacuum Package of dangling that cover closing material forms in release aperture when depositing, thereby form the vacuum chamber structure of pressure sensor.
12. according to claim 1 or 4 described pressure sensor manufacture methods, it is characterized in that, wherein filled dielectric material between the top layer via hole image.
13., it is characterized in that wherein the electrode of metal in the contact hole contacts with top layer metallic layer according to claim 1 or 4 described pressure sensor manufacture methods.
14., it is characterized in that wherein release aperture is arranged in the release guard layer of sacrifice layer top according to claim 1 or 4 described pressure sensor manufacture methods.
15., it is characterized in that wherein said pressure sensor manufacture method is used to make capacitance pressure transducer, according to claim 1 or 4 described pressure sensor manufacture methods.
16. pressure sensor of making according to the described pressure sensor manufacture method of one of claim 1 to 15.
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