CN102222742A - Quantum well luminous tube epitaxial wafer and growth method thereof - Google Patents
Quantum well luminous tube epitaxial wafer and growth method thereof Download PDFInfo
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Abstract
The invention belongs to the semiconductor technologies, and in particular relates to a quantum well luminous tube epitaxial wafer and a growth method thereof. The epitaxial wafer is characterized by at least comprising a layer of n-type GaAs substrate, a layer of n-type doped GaAs buffer layer, a layer of n-type doped AlGaAs lower limiting layer, a layer of non-doped or a small amount of n-type doped or partial thickness n-type doped AlGaAs lower waveguide layer, one or more non-doped AlGaInAs/AlGaAs quantum well structures, a layer of non-doped or a small amount of p-type doped or partial thickness p-type doped AlGaAs upper waveguide layer, a layer of p-type doped AlGaAs upper limiting layer, and a layer of p-type doped GaAs ohm contact layer; and the epitaxial wafer growth is prepared by using a metal organic chemical vapor deposition method. According to the epitaxial wafer provided by the invention, a center wavelength of the a luminous tube is adjusted by finely adjusting the conditions, such as thickness and the like of a quantum well, and the center wavelength is adjusted in a range about 800nm, and the product reliability is good.
Description
Technical field
The present invention relates to the semiconductor luminotron field, be specifically related to a kind of quantum well radiation pipe epitaxial wafer and growing method thereof, especially a kind of centre wavelength that relates to is in the near-infrared semiconductor light emitting of 800nm ± 10nm wave band effective AlGaInAs quantum well radiation pipe epitaxial slice structure and growing method.
Background technology
The III-V group iii v compound semiconductor material of GaAs base belongs to zincblende lattce structure, and the direct band gap transition is having important use aspect making infrarede emitting diode (LED), infrared laser pipe semiconductor photoelectric device, the optoelectronic integrated circuits such as (LD).The infraluminescence pipe of GaAs base is counted automatically, is encoded in infrared antitheft, warning, and also there is very big development prospect aspects such as production safety protection, monitoring, and the domestic demand amount is very big.Semiconductor luminotron in the market mainly concentrates on the visible light field, and no matter the infraluminescence pipe still is the production angle from the research and development angle, and proportion is all less.And the wave band of existing infraluminescence pipe only limits to 850nm and 940nm, also do not have relevant bibliographical information and product to sell near 800nm.
Summary of the invention
The objective of the invention is at the deficiencies in the prior art, a kind of effective quantum well radiation pipe epitaxial wafer and growing method thereof of GaAs base infraluminescence that adopts single or multiple AlGaInAs strained quantum wells as the luminous zone is provided, and device center light optical wavelength is about 800nm.
The present invention is by the following technical solutions:
A kind of quantum well radiation pipe of the present invention epitaxial wafer comprises at least:
Layer n type Doped GaAs substrate;
The GaAs resilient coating that one deck n type mixes is positioned on the substrate;
The AlGaAs lower limit layer that one deck n type mixes is positioned on the resilient coating;
Non-doping of one deck or the AlGaAs lower waveguide layer that a small amount of n type mixes or segment thickness n type mixes are positioned on the lower limit layer;
The AlGaInAs/AlGaAs quantum well structure of one or more non-doping is positioned on the lower waveguide layer;
Non-doping of one deck or the AlGaAs that a small amount of p type mixes or segment thickness p type mixes go up ducting layer, are positioned on the quantum well structure;
The AlGaAs upper limiting layer that one deck p type mixes is positioned on the ducting layer;
The GaAs ohmic contact layer that one deck p type mixes is positioned on the upper limiting layer.
If the above-mentioned quantum well structure of the present invention is a plurality of, then the quantum barrier material is identical with the lower waveguide layer material, but undopes, thickness can be identical with quantum well thickness also can be different.
The preparation of metal organic-matter chemical gas deposition (MOCVD) method is adopted in epitaxial wafer growth of the present invention, and growth room's air pressure is 1～100mbar; Growth temperature is controlled between 700～750 ℃.
What source metal of the present invention adopted is trimethyl gallium, trimethyl aluminium, trimethyl indium, and five clan sources are the arsine of 100% purity, and doped source is respectively the silane (n type) of zinc methide (p type) and 2%.
Quantum well structure is adopted in the luminous zone of this infrared light light pipe provided by the invention, can be that single quantum well also can be a Multiple Quantum Well, because the quantum size effect of quantum well, ground state level no longer is positioned at the bottom of the conduction band and top of valence band, can adjust the centre wavelength of luminous tube by the conditions such as thickness of trickle adjustment quantum well;
Add a small amount of In in the quantum well of this infraluminescence pipe provided by the invention and substituted Al and produced compressive strain, can play the effect that suppresses the defective growth, improved the reliability of device;
The luminous zone of this infraluminescence pipe provided by the invention has added upper and lower ducting layer between the upper and lower limit preparative layer, thereby improved the volume of luminous zone, promptly can reduce since the doping of limiting layer to the loss of photon, also can reduce the leakage of charge carrier when going into the current density increase, thereby reduce consequent smooth saturation effect;
The Al component of the upper and lower limit preparative layer of this infraluminescence pipe provided by the invention should be than the Al component height of upper and lower ducting layer, thereby the refractive index that makes the upper and lower limit preparative layer is lower than the refractive index of ducting layer slightly, can produce restriction to light, so this epitaxial slice structure more is applicable to the making of side infraluminescence pipe, but is not limited thereto.
Description of drawings
Fig. 1 is an epitaxial slice structure schematic diagram of the present invention.
Fig. 2 is the multi-quantum pit structure schematic diagram that the present invention adopts.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 1, 2, a kind of centre wavelength is near the 800nm, adopts the epitaxial wafer of strained quantum well AlGaInAs the semiconductor infraluminescence pipe of luminous zone, comprises at least:
One deck n type Doped GaAs substrate 10;
The GaAs resilient coating 11 that one deck n type mixes is positioned on the substrate;
The AlGaAs lower limit layer 12 that one deck n type mixes is positioned on the resilient coating;
The AlGaAs lower waveguide layer 13 that a small amount of n type of the non-doped domains of one deck mixes or segment thickness n type mixes is positioned on the lower limit layer;
AlGaInAs/AlGaAs quantum well 141/142 structure of individual or a plurality of non-doping is positioned on the lower waveguide layer;
Non-doping of one deck or the AlGaAs that a small amount of p type mixes or segment thickness p type mixes go up ducting layer 15, are positioned on the quantum well structure epitaxial loayer;
The AlGaAs upper limiting layer 16 that one deck p type mixes is positioned on the ducting layer;
The GaAs ohmic contact layer 17 that one deck p type mixes is positioned on the upper limiting layer;
Wherein said n type Doped GaAs substrate 10, dopant is Si, doping content L.0E18～4.0E18, resistivity is 2.1E-3～2.6E-3 (ohm.cm), the aufwuchsplate direction is that (100) are towards＜111〉inclined to one side 2 ° of A, mobility is 2050～2350cm
2/ V.s, substrate thickness is 325～375um, size is optional;
The GaAs resilient coating 11 that described n type mixes, doping content 1.0E18～4.0E18, dopant are Si, thickness is 200nm～400nm;
The AlGaAs lower limit layer 12 that described n type mixes, dopant is Si, and doping content 1.0E18～40E18, thickness are 1000nm～1500nm, and the Al component is 0.45;
Described AlGaAs lower waveguide layer 13 and AlGaAs go up ducting layer 15, are generally involuntary doped layer, but in order to increase conductivity, be beneficial to carrier mobility, reduce resistance and can take a small amount of the doping or the part doping, thickness is 100nm～150nm, and the Al component is 0.25;
The AlGaAs upper limiting layer 16 that described p type mixes, dopant is Zn, and doping content 1.0E18～4.0E18, thickness are 1000nm～1500nm, and the Al component is 0.45;
AlGaInAs/AlGaAs quantum well 141/142 structure of described one or more non-doping, this structure is between last ducting layer 15 and lower waveguide layer 13, this layer undopes, can only comprise single quantum well 141, as shown in Figure 1, also can be that quantum well is l41, it be the multi-quantum pit structure of 142 alternating growth that quantum is built, and is illustrated in figure 2 as three quantum well structure schematic diagrames, quantum well 141 is the AlGaInAs material, the Al component is 0.07, and the In component is 0.02, and the gallium component is 0.91, thickness is 9nm, quantum is built and is the AlGaAs material, and the Al component is 0.25, and thickness is 9nm; Thickness and material component that quantum well and quantum are built can carry out trickle adjustment, thereby the centre wavelength of luminous tube is changed near 800nm.
The GaAs ohmic contact layer 17 that described p type mixes is p type heavily doped region, and doping content 4E19, dopant are Zn, and thickness is 200nm～300nm.
The present invention adopts the MOCVD preparation method to be:
Step 1: the barter chamber of MOCVD equipment is put in the packaging bag that GaAs substrate 10 at first will be housed, to the operation of repeatedly filling, bleed of barter chamber, with the rubber gloves on the equipment of going up, the substrate packaging bag is taken out from the barter chamber, then substrate is taken out the graphite boat of putting into equipment reaction chamber from packaging bag;
Step 2: to reative cell heat up, step-down, reaction chamber temperature is stabilized near 720 ℃, pressure is 20mbar;
Step 3: begin to carry out the growth of n type GaAs resilient coating 11 on GaAs substrate 10, open trimethyl gallium, the reaction source valve of arsine and silane utilizes through the hydrogen of palladium tube purifying and brings the growth source molecule into reative cell, deposits on substrate.Total gas flow rate is 50L/min, and 2% silane is as n type dopant, and the doping content of n type GaAs resilient coating 11 is 2 * 10
18, thickness is 400nm;
Step 4: continued growth n type AlGaAs lower limit layer 12 on n type GaAs resilient coating 11, metal organic source is respectively the trimethyl aluminium trimethyl gallium, and five clan sources are the arsine of 100% purity, and dopant is 2% silane, and doping content is 1 * 10
18-2 * 1O
18, thickness is 1200nm, the Al component is 0.45;
Step 5: the AlGaAs lower waveguide layer 13 of growing successively, this layer is involuntary doped layer, closes silane, growth thickness 100nm, the Al component is 0.25;
Step 6: keeping reaction chamber temperature is 720 ℃ of growths of carrying out 141 layers of quantum well, and three clan sources are trimethyl aluminium, trimethyl gallium, trimethyl indium, five clan sources are the arsine of 100% purity, and its thickness is 9nm, the Al component is 0.07, and the In component is 0.02, and the gallium component is 0.91;
Step 7: close trimethyl indium, continued growth AlGaAs goes up ducting layer 15, and thickness is 100nm, and the Al component is 0.25;
Step 8: open the source zinc methide of p type dopant, carry out the growth of AlGaAs upper limiting layer 16, this layer is a p type doped layer, and doping content is 1 * 10
18-2 * 10
18, thickness is 0.45 for the 1500nmAl component;
Step 9: close the trimethyl aluminium reaction source then, reaction chamber temperature is reduced to about 650 ℃, carry out the growth of p type GaAs ohmic contact layer 17, this layer is a heavily doped region, and doping content is 4 * 10
18, thickness is 300nm;
Step 10: closeall reaction source, with the temperature reduction of reative cell, the epitaxial wafer of being grown is annealed, close all carrier gas, feed nitrogen protection, make the pressure of reative cell rise to 1 atmospheric pressure, finish the growth of epitaxial wafer.
Claims (10)
1. a quantum well radiation pipe epitaxial wafer is characterized in that, which comprises at least:
One deck n type Doped GaAs substrate;
The GaAs resilient coating that one deck n type mixes is positioned on the substrate;
The AlGaAs lower limit layer that one deck n type mixes is positioned on the resilient coating;
Non-doping of one deck or the AlGaAs lower waveguide layer that a small amount of n type mixes or segment thickness n type mixes are positioned on the lower limit layer;
The AlGaInAs/AlGaAs quantum well structure of one or more non-doping is positioned on the lower waveguide layer;
Non-doping of one deck or the AlGaAs that a small amount of p type mixes or segment thickness p type mixes go up ducting layer, are positioned on the quantum well structure;
The AlGaAs upper limiting layer that one deck p type mixes is positioned on the ducting layer;
The GaAs ohmic contact layer that one deck p type mixes is positioned on the upper limiting layer.
2. according to the quantum well radiation pipe epitaxial wafer described in the claim 1, it is characterized in that: described n type GaAs substrate, dopant is Si, doping content 1.0E18～4.0E18, resistivity is 2.1E-3～2.6E-3 (ohm.cm), the aufwuchsplate direction is that (100) are towards＜111〉inclined to one side 2 ° of A, mobility is 2050～2350cm
2/ V.s, substrate thickness are 325～375um.
3. according to the quantum well radiation pipe epitaxial wafer described in the claim 1, it is characterized in that: the GaAs resilient coating that described n type mixes, doping content 1.0E18～4.0E18, dopant are Si, thickness is 200nm～400nm.
4. according to the quantum well radiation pipe epitaxial wafer described in the claim 1, it is characterized in that: the AlGaAs lower limit layer that described n type mixes, dopant is Si, and doping content 1.0E18～4.0E18, thickness are 1000nm～1500nm, and the Al component is 0.35～0.55.
5. according to the quantum well radiation pipe epitaxial wafer described in the claim 1, it is characterized in that: described AlGaAs lower waveguide layer and AlGaAs go up ducting layer, be involuntary doped layer, in order to increase conductivity, be beneficial to carrier mobility, reduce resistance and can take a small amount of the doping or the part doping, thickness is 100nm～150nm, and the Al component is 0.25～0.45.
6. according to the quantum well radiation pipe epitaxial wafer described in the claim 1, it is characterized in that: institute
State the AlGaAs upper limiting layer that wherein said p type mixes, dopant is Zn, and doping content 1.0E18～4.0E18, thickness are 1000nm～1500nm, and the Al component is 0.35～0.55.
7. according to the quantum well radiation pipe epitaxial wafer described in the claim 1, it is characterized in that: the AlGaInAs/AlGaAs quantum well structure of described one or more non-doping, for being the multi-quantum pit structure that quantum well and quantum are built alternating growth.
8. according to the quantum well radiation pipe epitaxial wafer described in the claim 1, it is characterized in that: quantum well is the AlGaInAs material, and the Al component is 0.07, the In component is 0.02, and the gallium component is 0.91, and thickness is 9nm, quantum is built and is the AlGaAs material, and the Al component is＜0.25, and thickness is 9nm.
9. according to the pipe of quantum well radiation described in the claim 1 epitaxial wafer, it is characterized in that: the GaAs ohmic contact layer that described p type mixes, be p type heavily doped region, doping content 4E19, dopant are Zn, thickness is 200nm～300nm.
10. quantum well radiation pipe epitaxial wafer growth method is characterized in that: adopt the preparation of metal organic-matter chemical vapour deposition method, growth room's air pressure is 10～100mbar; Growth temperature is controlled between 700～750 ℃, and what source metal adopted is trimethyl gallium, trimethyl aluminium, trimethyl indium, and five clan sources are the arsine of 100% purity, and doped source is respectively the silane of p type zinc methide and n type 2%.
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| CN103378242A (en) * | 2012-04-12 | 2013-10-30 | 财团法人工业技术研究院 | Light emitting diode |
| CN104037618A (en) * | 2014-04-22 | 2014-09-10 | 吉林农业大学 | GaAs-based near-infrared band Sb multi-layer quantum dot and asymmetric quantum well coupled laser structure |
| CN105489719A (en) * | 2015-12-31 | 2016-04-13 | 天津三安光电有限公司 | Infrared light-emitting diode with strain harmony multi-quantum well structure |
| CN105932543A (en) * | 2016-04-21 | 2016-09-07 | 武汉华工正源光子技术有限公司 | Modulation-doped multi-period strain-compensated quantum well epitaxial layer and growth method thereof |
| CN110600996A (en) * | 2019-09-26 | 2019-12-20 | 苏州矩阵光电有限公司 | Quantum well layer structure, semiconductor laser and preparation method |
| CN111404025A (en) * | 2020-03-30 | 2020-07-10 | 中国科学院半导体研究所 | Epitaxial growth method of AlGaAs/AlGaInP mixed material |
| CN112563376A (en) * | 2020-12-11 | 2021-03-26 | 西安立芯光电科技有限公司 | Diode epitaxial structure |
| CN113206448A (en) * | 2021-04-30 | 2021-08-03 | 中国科学院半导体研究所 | Laser with current barrier layer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103378242A (en) * | 2012-04-12 | 2013-10-30 | 财团法人工业技术研究院 | Light emitting diode |
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| CN111404025A (en) * | 2020-03-30 | 2020-07-10 | 中国科学院半导体研究所 | Epitaxial growth method of AlGaAs/AlGaInP mixed material |
| CN111404025B (en) * | 2020-03-30 | 2021-04-06 | 中国科学院半导体研究所 | Epitaxial growth method of AlGaAs/AlGaInP mixed material |
| CN112563376A (en) * | 2020-12-11 | 2021-03-26 | 西安立芯光电科技有限公司 | Diode epitaxial structure |
| CN113206448A (en) * | 2021-04-30 | 2021-08-03 | 中国科学院半导体研究所 | Laser with current barrier layer |
| CN115085009A (en) * | 2022-07-27 | 2022-09-20 | 湖南汇思光电科技有限公司 | High-performance InAs quantum dot laser and preparation method thereof |
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Application publication date: 20111019 |