CN101709457A - Device of chemical vapor deposition diamond or other substances - Google Patents
Device of chemical vapor deposition diamond or other substances Download PDFInfo
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- CN101709457A CN101709457A CN 200910075864 CN200910075864A CN101709457A CN 101709457 A CN101709457 A CN 101709457A CN 200910075864 CN200910075864 CN 200910075864 CN 200910075864 A CN200910075864 A CN 200910075864A CN 101709457 A CN101709457 A CN 101709457A
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- pump
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- gas
- deposition diamond
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- Chemical Vapour Deposition (AREA)
Abstract
The invention provides a device of chemical vapor deposition diamond or other substances, relating to the technical field of functional material preparation. The device comprises a direct current arc jet plasma torch, a vacuum chamber and a substrate, wherein a gas recycling mechanism is arranged between the vacuum chamber and the plasma torch. Compared with the prior art, the invention better solves the problem of long-standing large gas consumption in the chemical vapor deposition diamond with the direct current arc jet method in the prior art, has simple structure and reasonable technology, can ensure product quality, greatly saves working medium gas usage amount, greatly lowers cost, reduces emission, is favourable for environment protection and has favourable economic benefit and social benefit.
Description
Technical field
The invention belongs to the functional materials preparing technical field.
Background technology
The method of chemical vapour deposition diamond is generally as follows: hydrogen, carbonaceous gas (as methane) etc. by behind the high-temperature activation source, are dissociated into hydrogen atom, carbon atom and various hydrocarbon group.When air-flow ran into the lower substrate of temperature, under the effect of hydrogen atom, carbon atom was deposited as diamond.At present, according to the difference of activation source, utilize chemical vapour deposition to prepare adamantine method and mainly contain three kinds: microwave method, hot wire process and dc arc jet method.The dc arc jet method is celebrated because of its fast growth, good product quality, but its very large gas consumption also always by the people dirt sick.
Summary of the invention
The device that the purpose of this invention is to provide a kind of chemical vapour deposition diamond or other material, main purpose is to solve the problem that gas consumption is excessive, cost is high in the dc arc jet forensic chemistry vapor deposition processes of utilizing, it is simple in structure, can not only guarantee the quality of product, and gas usage province, cost is low, reduces discharging, help environmental protection, good in economic efficiency.
Main technical schemes of the present invention is: the device of a kind of chemical vapour deposition diamond or other material, comprise the dc arc jet plasmatorch, and vacuum chamber, substrate is characterized in that being provided with gas reuse mechanism between vacuum chamber and plasmatorch.
Described vacuum chamber can be enclosed construction, and is provided with the outlet that links to each other with gas reuse mechanism, is provided with topping-up pump in the gas reuse mechanism, and the escape pipe of topping-up pump links to each other with the inlet pipe of vapor pipe and dc arc jet plasmatorch.
Be convenient control, can be provided with the vacuum chamber pressure variable valve in the described gas reuse mechanism, also can be provided with topping-up pump top hole pressure variable valve and off-gas pump in the vapor pipe of topping-up pump.
Be more convenient, accurate control, described vacuum chamber can be provided with vacuum chamber pressure and measure vacuumometer, and the escape pipe of topping-up pump also can be provided with topping-up pump outlet vacuumometer.
Positively effect of the present invention is: contrast with prior art, having solved prior art well utilizes the medium-term and long-term gas consumption that exists of dc arc jet forensic chemistry vapor diamond deposition process to reach the high problem of cost greatly, it is simple in structure, technology is reasonable, can not only guarantee the quality of product, and can save the Working medium gas consumption greatly, reduce cost, reduce discharging, help environmental protection, have good economic benefit and social benefit.
Be described further below in conjunction with drawings and Examples, but not as a limitation of the invention.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Among Fig. 1,1. dc arc jet plasmatorch, 2. vacuum chamber, 3. substrate, 4. vacuum chamber pressure is measured vacuumometer, 5. vacuum chamber pressure variable valve, 6. topping-up pump, 7. topping-up pump outlet vacuumometer, 8. topping-up pump top hole pressure variable valve, 9. off-gas pump, 10. under meter.
Embodiment
Referring to Fig. 1, the device of this chemical vapour deposition diamond comprises dc arc jet plasmatorch 1, vacuum chamber 2, and substrate 3 is provided with gas reuse mechanism at vacuum chamber 2 and 1 of dc arc jet plasmatorch; Vacuum chamber 2 is an enclosed construction, and is provided with the outlet that links to each other with gas reuse mechanism, and gas reuse mechanism is provided with topping-up pump 6, and the escape pipe of topping-up pump 6 links to each other with the inlet pipe of vapor pipe and dc arc jet plasmatorch 1; Gas reuse mechanism is provided with vacuum chamber pressure variable valve 5, is provided with topping-up pump top hole pressure variable valve 8 and off-gas pump 9 in the vapor pipe of topping-up pump 6; Vacuum chamber 2 is provided with vacuum chamber pressure and measures vacuumometer 4, and the escape pipe of topping-up pump 6 is provided with topping-up pump outlet vacuumometer 7.
Adopt two lobe pump series connection of ZJ-600, ZJ-150 unit to constitute topping-up pump, select for use 2X-8 type rotary-vane vaccum pump to make off-gas pump, plasmatorch is the heavy caliber magnetic field of development voluntarily and the direct current-arc plasma torch that hydrokinetics jointly controls, produce the polycrystalline diamond thick-film, vacuum chamber pressure 4Kpa, topping-up pump top hole pressure 16Kpa, plasmatorch is stable, the diamond thick-film good quality of product.
Its working process is: dc arc jet forensic chemistry vapor diamond deposition carries out in vacuum chamber, and plasmatorch 1 is installed in the top of vacuum chamber 2, after reactant gases is sent into plasmatorch, is sprayed onto substrate 3 through the electric arc disassociation and generates diamond.In other method and apparatus, the gas that reacted is to extract vacuum chamber out by vacuum pump to drain into atmosphere.And in the present invention, the gas that reacted is after vacuum chamber pressure variable valve 5 is extracted vacuum chamber out by topping-up pump 6, most of and reenter plasmatorch 1 together by under meter 10 initiate process gass and recycle, small part gas drains into atmosphere by off-gas pump 9 behind topping-up pump 9 top hole pressure variable valve 8.Vacuum chamber pressure is installed on the vacuum chamber 2 measures vacuumometer 4, the pressure that topping-up pump outlet vacuumometer 7 is measured this place is respectively installed in the topping-up pump outlet.The aperture that changes variable valve 5 and 8 can be regulated the pressure of vacuum chamber and topping-up pump outlet respectively, the pressure of vacuum chamber generally at the hundreds of handkerchief between thousands of handkerchiefs, the pressure of topping-up pump outlet is generally between several kPas to tens kPas.
Topping-up pump in the system can be in lobe pump, claw pump, the spiral pump a kind of, or the vacuum pump of other kind can be that single pump uses, also a plurality of pumps are united use, use such as the series connection of two-stage lobe pump.Off-gas pump selects kind very extensive, and various vacuum pumps that can discharging directly into atmosphere all can use.Trial effect is fine, the process gas reaction back major part that enters plasmatorch is returned in the square through topping-up pump 6, again utilize, can not only guarantee the quality of product, and the Working medium gas consumption is saved greatly, the system that does not have the gas reclamation set reduces gas usage and can reach 85%, greatly reduces the preparation cost of product.Dc arc jet plasmatorch 1 can be used the dc arc jet plasmatorch of prior art, and also available number of patent application is 200920217261.3 and 200910075519.5 dc arc jet plasmatorch.
Claims (4)
1. the device of a chemical vapour deposition diamond or other material comprises plasmatorch (1), vacuum chamber (2), and substrate (3) is characterized in that being provided with gas reuse mechanism between vacuum chamber (2) and dc arc jet plasmatorch (1).
2. the device of chemical vapour deposition diamond according to claim 1 or other materials, it is characterized in that described vacuum chamber (2) is an enclosed construction, and be provided with the outlet that links to each other with gas reuse mechanism, be provided with topping-up pump (6) in the gas reuse mechanism, the escape pipe of topping-up pump (6) links to each other with the inlet pipe of vapor pipe and dc arc jet plasmatorch (1).
3. the device of chemical vapour deposition diamond according to claim 2 or other materials, it is characterized in that being provided with vacuum chamber pressure variable valve (5) in the described gas reuse mechanism, be provided with topping-up pump top hole pressure variable valve (8) and off-gas pump (9) in the vapor pipe of topping-up pump (6).
4. the device of chemical vapour deposition diamond according to claim 3 or other material is characterized in that described vacuum chamber (2) is provided with vacuum chamber pressure and measures vacuumometer (4), and the escape pipe of topping-up pump (6) is provided with topping-up pump outlet vacuumometer (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910075864 CN101709457B (en) | 2009-11-05 | 2009-11-05 | Device of chemical vapor deposition diamond or other substances |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910075864 CN101709457B (en) | 2009-11-05 | 2009-11-05 | Device of chemical vapor deposition diamond or other substances |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101709457A true CN101709457A (en) | 2010-05-19 |
| CN101709457B CN101709457B (en) | 2013-08-28 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 200910075864 Active CN101709457B (en) | 2009-11-05 | 2009-11-05 | Device of chemical vapor deposition diamond or other substances |
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| CN (1) | CN101709457B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103086406A (en) * | 2013-01-25 | 2013-05-08 | 天津理工大学 | Preparation method of magnesium oxide nanobelt-carbon nanotube composite material |
| CN106381479A (en) * | 2016-10-10 | 2017-02-08 | 无锡宏纳科技有限公司 | Wafer chemical vapor phase deposition reaction device |
| CN108914088A (en) * | 2018-09-29 | 2018-11-30 | 北京科技大学 | A kind of gas-circulating system and its application method preparing excellent diamonds |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1632165A (en) * | 2004-12-28 | 2005-06-29 | 北京科技大学 | Process for preparing diamond covering on sintered-carbide tool |
| CN100335677C (en) * | 2004-12-28 | 2007-09-05 | 北京科技大学 | DC electric arc plasma chemical vapor deposition apparatus and diamond coating method |
| CN100364644C (en) * | 2005-12-27 | 2008-01-30 | 温州瑞气空分设备有限公司 | Process for improving gas reclaiming rate of pressure swing absorption separation process |
| CN201525885U (en) * | 2009-11-05 | 2010-07-14 | 河北普莱斯曼金刚石科技有限公司 | Device of chemical vapor deposition diamond or other materials |
-
2009
- 2009-11-05 CN CN 200910075864 patent/CN101709457B/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103086406A (en) * | 2013-01-25 | 2013-05-08 | 天津理工大学 | Preparation method of magnesium oxide nanobelt-carbon nanotube composite material |
| CN106381479A (en) * | 2016-10-10 | 2017-02-08 | 无锡宏纳科技有限公司 | Wafer chemical vapor phase deposition reaction device |
| CN108914088A (en) * | 2018-09-29 | 2018-11-30 | 北京科技大学 | A kind of gas-circulating system and its application method preparing excellent diamonds |
| CN108914088B (en) * | 2018-09-29 | 2023-07-28 | 北京科技大学 | Gas circulation system for preparing high-quality diamond and application method thereof |
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| Publication number | Publication date |
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| CN101709457B (en) | 2013-08-28 |
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Effective date of registration: 20180919 Address after: 050000 No. 2 Science and technology road, Xibaipo Economic Development Zone, Pingshan County, Shijiazhuang, Hebei Patentee after: Hebei Ping diamond diamond Co., Ltd. Address before: 050081 friendship south street 46, Qiaoxi District, Shijiazhuang, Hebei. Patentee before: Hebei Plasma Diamond Technology Co., Ltd. |
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| TR01 | Transfer of patent right |