CN108914088B - Gas circulation system for preparing high-quality diamond and application method thereof - Google Patents
Gas circulation system for preparing high-quality diamond and application method thereof Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/272—Diamond only using DC, AC or RF discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using dc or ac discharges
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Abstract
A gas circulation system for preparing high-quality diamond and a use method thereof belong to the field of material preparation. The gas circulation system comprises a direct current injection plasma chemical vapor deposition system, a gas supply system, a tail gas circulation system and a gas purification system. The gas supply system provides feed gas for two direct current injection plasma chemical vapor deposition devices. The tail gas circulation system can extract the tail gas in the deposition system and supply the tail gas to a gas purification system consisting of a hydrogen purification instrument, and the tail gas is purified and then separated into high-purity hydrogen and mixed gas containing argon and carbon elements, wherein the high-purity hydrogen is supplied back to the deposition device, the tail gas containing argon and carbon is supplied to one of the deposition devices as raw gas to deposit heat sink-level diamond, and the other deposition device can realize the supply of the high-purity gas to deposit optical-level diamond films. Through the process, the recycling of the high-purity hydrogen is realized, the preparation requirement of the high-quality diamond film can be met, and the preparation cost can be reduced.
Description
Technical Field
The invention relates to a gas circulation system for preparing high-quality diamond and a use method thereof, in particular to a process for preparing a high-quality diamond film by a direct current arc plasma jet chemical vapor deposition method, belonging to the field of material preparation.
Background
Currently, among the technologies for depositing diamond films, the direct current arc plasma chemical vapor deposition diamond technology is widely used due to the characteristic of high deposition rate. However, a larger gas consumption results in a higher cost of preparing the diamond film.
In order to solve the problem, scientific researchers at home and abroad do a great deal of work. The use of a gas circulation system to reduce the cost of diamond film production was reported by Ivan Martorell and Fanxiu Lu, university of beijing technology, in western housing electric, 1999 and 2000, diamond and Related Materials, respectively. However, the recycling of the gas inevitably introduces impurities into the deposition system, which will affect the quality of the diamond film, especially the optical quality.
All of the above gas circulation systems have the problem that the use of a circulating gas inevitably introduces impurities into the system which can affect the quality of the diamond, especially the optical quality.
Disclosure of Invention
The invention aims to provide a gas circulation system for preparing diamond by direct current arc spraying plasma chemical vapor deposition and a using method thereof. The system comprises a hydrogen purifier, so that high-purity supply of common-purity raw material hydrogen can be realized, the purity of the hydrogen in a circulation system can be ensured, and the deposition condition of a high-quality diamond film can be met; and meanwhile, the cost in the diamond deposition process can be reduced by using the hydrogen with common purity. In addition, the cost for preparing the high-quality diamond film is reduced by recycling the gas.
A gas circulation system for preparing high-quality diamond is composed of a direct-current jet plasma chemical vapor deposition system, a gas supply system, a tail gas circulation system and a gas purification system. The direct current injection plasma chemical vapor deposition system consists of two direct current arc injection plasma devices, wherein one direct current arc injection plasma device is used for depositing an optical grade diamond film, and the other direct current arc injection plasma device is used for depositing a heat sink grade diamond film; the gas supply system is connected with the purification system and the direct current injection plasma chemical vapor deposition system and is responsible for supplying raw gas in the diamond deposition process; the gas purification system is connected with the gas supply system, the tail gas circulation system and the direct current injection plasma chemical vapor deposition system; the deposition rate can be improved through gas circulation to prepare a large-area diamond film, so that the purpose of preparing high-quality diamond with low cost is achieved.
Further, the direct current arc injection plasma chemical vapor deposition system comprises a direct current injection plasma arc torch and a direct current injection plasma deposition cavity; the raw material gas comprises common hydrogen, high-purity argon and high-purity methane, and the quantity of the introduced gas is controlled by a flowmeter.
Further, the gas supply system comprises common hydrogen, high-purity argon, high-purity methane, a first flowmeter, a second flowmeter, a third flowmeter, a fourth flowmeter, a fifth flowmeter, a sixth flowmeter, a seventh flowmeter, an eighth flowmeter and a ninth flowmeter; the high-purity hydrogen can be changed into the hydrogen with common purity by introducing the hydrogen purification system, and the direct-current jet plasma chemical vapor deposition system is introduced after the purification, so that the cost of raw gas can be effectively reduced.
Further, the tail gas circulation system comprises a first heat exchanger, a second heat exchanger, a first filter, a second filter, a first oil-water separator, a second oil-water separator, a first Roots pump, a second Roots pump and a gas booster pump; the device comprises a heat exchanger, an oil-water separator, a Roots pump, a booster pump, a pressure booster pump, a vacuum cavity and a pressure booster pump, wherein the heat exchanger is used for cooling high-temperature gas, the filter is used for removing impurities and dust in tail gas, the oil-water separator is used for removing oil gas and water vapor in the tail gas, the Roots pump is used for pumping gas in the vacuum cavity, and the booster pump is used for increasing the pressure of the tail gas pumped by the Roots pump; the gas circulation system can pump the raw gas for depositing diamond after ionization in the direct current jet plasma chemical vapor deposition system out of the deposition system, remove oil gas, water vapor and impurities therein after the tail gas is cooled, and supply the gas after repression into the gas purification system.
Further, the gas purification system is connected with the gas supply system, the tail gas circulation system and the direct current injection plasma chemical vapor deposition system, the gas purification device comprises a hydrogen purification device, the main components in the tail gas of the purification device are argon and methane, the hydrogen purification device can purify the mixed gas with the hydrogen volume fraction of more than 50% into high-purity hydrogen with the hydrogen volume fraction of more than 99.9999%, filter other gases in the mixed gas and discharge the filtered gas out of the purification system in a tail gas mode; the high-purity hydrogen is purified by a hydrogen purifier, flows out from an outlet and is supplied to a direct-current jet plasma chemical vapor deposition system again for high-quality optical film deposition, and the recycling of the recycle gas can be realized.
Further, after the raw material gas is introduced into the direct-current jet plasma jet device for dissociation and used for depositing the diamond film, the tail gas is pumped into a gas circulation system by a vacuum pump, and after the tail gas is cooled, pressurized and filtered to remove water vapor and oil gas, the tail gas enters a hydrogen purifier.
Further, a direct current arc injection plasma device in the direct current injection plasma chemical vapor deposition system uses the tail gas of the hydrogen purifier as raw gas for depositing the heat sink-level diamond film; a DC arc jet plasma apparatus uses high purity argon as a feed gas for depositing optical grade diamond films.
Further, a hydrogen purifier additionally used in the direct current jet plasma chemical vapor deposition system controls the hydrogen flow to be 0-100L/s, namely 0-100 Slm according to actual conditions.
A method for using the gas circulation system for preparing high-quality diamond, which is characterized in that: firstly, controlling the flow of common hydrogen to a hydrogen purifier through a second flowmeter, purifying the common hydrogen by the purifier, and introducing the hydrogen into a first direct current arc injection plasma torch together with high-purity methane and high-purity argon in a high-purity hydrogen form; after the raw material gas is used for depositing the diamond film, the tail gas is pumped out of the first direct current arc jet plasma deposition cavity by the Roots pump I; then the tail gas is cooled by a first heat exchanger, the first filter and a first oil-water separator are used for filtering oil gas, water vapor and impurities, the tail gas is pressurized by a gas booster pump and then is fed into a hydrogen purifier for purification and separation, and the purified high-purity hydrogen is fed into a first direct current arc jet plasma torch for deposition of a diamond film; the tail gas separated by the hydrogen purifying instrument is discharged from a tail gas outlet, the main components of the tail gas are argon and carbon-containing groups, the tail gas is used as a feed gas for preparing a diamond film by a second direct current arc jet plasma torch, and in order to ensure the feed gas supply, part of the argon is required to be controlled by a flowmeter six to supply high-purity argon; the tail gas is pumped out of the second direct current arc jet plasma deposition cavity by a second Roots pump after the diamond film is deposited by the raw material gas; and then the tail gas is cooled by a second heat exchanger, the second filter and the second oil-water separator filter oil gas, water vapor and impurities, and then the tail gas is introduced into the direct-current jet plasma chemical vapor deposition system again for deposition of a diamond film, so that gas recycling is realized.
Furthermore, only high-purity methane is required to be fed into the first deposition system, and methane is not provided as a raw material gas by the second deposition system, and only the tail gas of the purifier containing the carbon-containing groups is required to be fed. Can improve the utilization efficiency of methane and effectively reduce the preparation cost.
According to the invention, the hydrogen purifier is introduced into the gas circulation system of the direct current arc jet plasma chemical vapor deposition system, so that the circulation supply of high-purity hydrogen can be realized, the purity of the circulating gas is effectively improved, and the deposition of high-quality diamond is ensured. Meanwhile, common hydrogen can be used as feed gas to supply, after the hydrogen passes through the hydrogen purifier, the purity of the hydrogen is improved, and the cost of the feed gas can be effectively reduced. The tail gas in the purifier mainly contains argon and carbon-containing groups, can be used for preparing diamond by another deposition device, and can ensure the use efficiency of raw material gas. Therefore, the gas circulation system can effectively improve the purity of the raw gas, reduce the preparation cost and is worthy of popularization in practical application.
Drawings
FIG. 1 is a schematic diagram of a gas circulation system and method of use for producing high quality diamond;
reference numerals in the figures: 1. a first direct current arc injection plasma arc torch, a second direct current arc injection plasma deposition cavity, a third heat exchanger, a fourth filter, a fifth Roots pump, a fourth common hydrogen, 7, a gas booster pump, 8, a first oil-water separator, 9, a first flowmeter, 10, a second flowmeter, 11, a third flowmeter, 12, a hydrogen purifier, 13, a tail gas outlet of the hydrogen purifier, 14, a pure hydrogen outlet of the hydrogen purifier, 15, high-purity methane, 16, fourth, 17, fifth, 18, sixth, 19, high-purity argon, 20, seventh, 21, eighth, 22, second direct current arc injection plasma arc torch, 23, second direct current arc injection plasma deposition cavity, 24, second heat exchanger, 25, second filter, 26, second Roots pump, 27, exhaust gas vent, 28, second oil-water separator, 29, ninth.
Detailed Description
Examples
The invention relates to a gas circulation system for preparing high-quality diamond and a use method thereof. The system mainly comprises a direct current jet plasma deposition system, a heat exchanger, a filter, a Roots pump, a gas booster pump, an oil-water separator, a flowmeter, a hydrogen purifier, common hydrogen, high-purity methane, high-purity argon and the like.
Firstly, the flow rate of the common hydrogen 6 is controlled by a second flowmeter 10, the common hydrogen is fed into a first direct current arc injection plasma torch 1 together with high-purity methane 15 and high-purity argon 19 in the form of high-purity hydrogen after being purified by the purifier. After the feed gas was used for deposition of the diamond film, the tail gas was pumped out of the number one dc arc jet plasma deposition chamber 2 by roots pump one 5. And then the tail gas is cooled by a first heat exchanger 3, oil gas, water vapor and impurities are filtered by a first filter 4 and a first oil-water separator 8, the tail gas is pressurized by a gas booster pump 7 and then is fed into a hydrogen purifier 12 again for purification and separation, and the purified high-purity hydrogen is fed into a first direct current arc jet plasma torch 1 again for deposition of diamond films.
And the tail gas separated by the hydrogen purifier 12 is discharged from a tail gas outlet 13, wherein the main components of the tail gas are argon and carbon-containing groups, the tail gas can be used as a feed gas for preparing a diamond film by a second direct current arc jet plasma torch 22, and meanwhile, in order to ensure the feed gas supply, part of the argon is required to be controlled by a flow meter six 18 to control the supply amount of high-purity argon 19. The tail gas is pumped out of the second direct current arc jet plasma deposition cavity 23 by a Roots pump II 27 after the diamond film is deposited by the feed gas. And then the tail gas is cooled by a second heat exchanger 24, the second filter 25 and the second oil-water separator 28 filter oil gas, water vapor and impurities, and then the tail gas is introduced into the direct current arc jet plasma system again for deposition of a diamond film, so that gas recycling is realized.
In summary, the purity of the raw material gas can be effectively improved in the gas circulation system of the direct current arc injection plasma chemical vapor deposition system, so that the method is used for preparing the high-quality diamond film, and meanwhile, the preparation cost is reduced. The tail gas of the purifier mainly contains argon and carbon-containing groups, and can be supplied to another direct current arc injection plasma chemical vapor deposition system for depositing diamond, namely, the equipment does not need to be provided with methane. While improving the gas use efficiency, the common hydrogen can be used as the raw material gas to lower the preparation cost.
The foregoing is only a preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions easily contemplated by those skilled in the art within the scope of the present invention should be included in the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.
Claims (8)
1. A gas circulation system for producing high quality diamond, characterized by: the gas circulation system consists of a direct current injection plasma chemical vapor deposition system, a gas supply system, a tail gas circulation system and a gas purification system; the direct current injection plasma chemical vapor deposition system consists of two direct current arc injection plasma devices, wherein one direct current arc injection plasma device is used for depositing an optical grade diamond film, and the other direct current arc injection plasma device is used for depositing a heat sink grade diamond film; the gas supply system is connected with the purification system and the direct current injection plasma chemical vapor deposition system and is responsible for supplying raw gas in the diamond deposition process; the gas purification system is connected with the gas supply system, the tail gas circulation system and the direct current jet plasma chemical vapor deposition system, the gas purification device comprises a hydrogen purification device, the main components in the tail gas of the purification device are argon and methane, the hydrogen purification device can purify the mixed gas with the hydrogen volume fraction of more than 50% into high-purity hydrogen with the hydrogen volume fraction of more than 99.9999%, filter other gases in the mixed gas and discharge the filtered gas out of the purification system in a tail gas mode; purified by a hydrogen purifier, high-purity hydrogen flows out from an outlet and is supplied to a direct-current jet plasma chemical vapor deposition system again for high-quality optical film deposition, so that the recycling gas can be reused for multiple times; the deposition rate can be improved through gas circulation to prepare a large-area diamond film, so that the purpose of preparing high-quality diamond with low cost is achieved.
2. A gas circulation system for producing high quality diamond according to claim 1, wherein: the direct current arc injection plasma chemical vapor deposition system comprises a direct current injection plasma arc torch and a direct current injection plasma deposition cavity; the raw material gas comprises common hydrogen, high-purity argon and high-purity methane, and the quantity of the introduced gas is controlled by a flowmeter.
3. A gas circulation system for producing high quality diamond according to claim 1, wherein: the gas supply system comprises common hydrogen, high-purity argon, high-purity methane, a first flowmeter, a second flowmeter, a third flowmeter, a fourth flowmeter, a fifth flowmeter, a sixth flowmeter, a seventh flowmeter, an eighth flowmeter and a ninth flowmeter; the high-purity hydrogen can be changed into the hydrogen with common purity by introducing the hydrogen purification system, and the direct-current jet plasma chemical vapor deposition system is introduced after the hydrogen is purified, so that the cost of raw gas can be effectively reduced.
4. A gas circulation system for producing high quality diamond according to claim 1, wherein: the tail gas circulation system comprises a first heat exchanger, a second heat exchanger, a first filter, a second filter, a first oil-water separator, a second oil-water separator, a first Roots pump, a second Roots pump and a gas booster pump; the device comprises a heat exchanger, an oil-water separator, a Roots pump, a booster pump, a pressure booster pump, a vacuum cavity and a pressure booster pump, wherein the heat exchanger is used for cooling high-temperature gas, the filter is used for removing impurities and dust in tail gas, the oil-water separator is used for removing oil gas and water vapor in the tail gas, the Roots pump is used for pumping gas in the vacuum cavity, and the booster pump is used for increasing the pressure of the tail gas pumped by the Roots pump; the gas circulation system can pump the raw gas for depositing diamond after ionization in the direct current jet plasma chemical vapor deposition system out of the deposition system, remove oil gas, water vapor and impurities therein after the tail gas is cooled, and supply the gas to the gas purification system after repression.
5. A gas circulation system for producing high quality diamond according to claim 1, wherein: after the raw material gas is introduced into the direct-current jet plasma jet device for dissociation and used for depositing the diamond film, the tail gas is pumped into a gas circulation system by a vacuum pump, and the tail gas enters a hydrogen purifier after being cooled, pressurized and filtered to remove water vapor and oil gas.
6. A gas circulation system for producing high quality diamond according to claim 1, wherein: a direct current arc jet plasma device in a direct current jet plasma chemical vapor deposition system uses tail gas of a hydrogen purifier as raw material gas for depositing a heat sink-level diamond film; a DC arc jet plasma apparatus uses high purity argon as a feed gas for depositing optical grade diamond films.
7. A gas circulation system for producing high quality diamond according to claim 1, wherein: the hydrogen purifier added in the direct current jet plasma chemical vapor deposition system controls the hydrogen flow to be 0-100L/s, namely 0-100 Slm according to the actual situation.
8. A method of using the gas circulation system of claims 1-4 for producing high quality diamond, comprising: firstly, the flow of the common hydrogen (6) is controlled by a second flowmeter (10) to be introduced into a hydrogen purifier (12), and after the common hydrogen is purified by the purifier, the hydrogen is introduced into a first direct current arc jet plasma torch (1) together with high-purity methane (15) and high-purity argon (19) in a high-purity hydrogen form; after the raw material gas is used for depositing the diamond film, the tail gas is pumped out of the first direct current arc spraying plasma deposition cavity (2) by the Roots pump I (5); then the tail gas is cooled by a first heat exchanger (3), oil gas, water vapor and impurities are filtered by a first filter (4) and a first oil-water separator (8), the tail gas is pressurized by a gas booster pump (7) and then is fed into a hydrogen purifier (12) for purification and separation, and the purified high-purity hydrogen is fed into a first direct current arc jet plasma torch (1) for deposition of a diamond film; the tail gas separated by the hydrogen purifying instrument (12) is discharged from a tail gas outlet (13), the main components of the tail gas are argon and carbon-containing groups, the tail gas is used as a feed gas for preparing a diamond film by a second direct current arc jet plasma torch (22), and in order to ensure the feed gas supply, part of the argon is required to control the supply amount of high-purity argon (19) by a flow meter six (18); drawing out a second direct current arc jet plasma deposition cavity (23) from tail gas after the diamond film is deposited by the feed gas by a Roots pump II (27); and then the tail gas is cooled through a second heat exchanger (24), oil gas, water vapor and impurities are filtered through a second filter (25) and a second oil-water separator (28), and then the tail gas is introduced into a direct current jet plasma chemical vapor deposition system again for deposition of a diamond film, so that gas recycling is realized.
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| CN109888128A (en) * | 2019-03-25 | 2019-06-14 | 京东方科技集团股份有限公司 | The production method of the packaging method and display panel of OLED display panel |
| CN113667961B (en) * | 2021-07-31 | 2023-07-07 | 山西国脉金晶碳基半导体材料产业研究院有限公司 | Preparation device and preparation method of chemical vapor deposition high-quality diamond |
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