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CN101088960A - Electronic device, dielectric ceramic composition and the production method - Google Patents

Electronic device, dielectric ceramic composition and the production method Download PDF

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Publication number
CN101088960A
CN101088960A CNA2007101100238A CN200710110023A CN101088960A CN 101088960 A CN101088960 A CN 101088960A CN A2007101100238 A CNA2007101100238 A CN A2007101100238A CN 200710110023 A CN200710110023 A CN 200710110023A CN 101088960 A CN101088960 A CN 101088960A
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CN
China
Prior art keywords
mentioned
minor component
raw material
principal constituent
dielectric ceramic
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Granted
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CNA2007101100238A
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Chinese (zh)
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CN101088960B (en
Inventor
M·柳田
佐藤阳
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TDK Corp
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TDK Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/10—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances metallic oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
    • H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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Abstract

A production method of a dielectric ceramic composition comprising a main component including a compound having a perovskite-type crystal structure expressed by a general formula ABO 3 (note that ''A'' is Ba alone or a composite of Ba and Ca, and ''B'' is Ti alone or a composite of Ti and Zr), and a fourth subcomponent including an oxide of R (note that R is at least one selected from Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu); comprising steps of dividing a material of the main component to a first main component material and a second main component material, obtaining a post-reaction material by bringing the material of the first main component to react in advance with a part of the fourth subcomponent material to be included in the dielectric ceramic composition, and adding the material of the second main component and rest of the fourth subcomponent material to be included in the dielectric ceramic composition into the post-reaction material; wherein, when assuming that number of moles of the first main component is n1 mole and number of moles of the second main component is n2, a ratio of the first main component to total number of moles of the first main component and the second main component is 0.5 n1/(n1+n2) 1: by which preferable permittivity and a capacity-temperature characteristic can be obtained even when dielectric layers are made thin.

Description

Electronic unit, dielectric ceramic composition and manufacture method thereof
Technical field
The present invention relates to dielectric ceramic composition and manufacture method thereof, and have the electronic unit of this dielectric ceramic composition as dielectric layer as the dielectric layer of electronic units such as multi-layer ceramic capacitor for example etc.
Background technology
Multi-layer ceramic capacitor as an example of electronic unit is following manufacturing, for example on the ceramic green sheet of the dielectric ceramic composition that contains regulation, print the internal electrode of predetermined pattern, their multi-discs is alternately overlapping, and integrated then obtaining given birth to chip, and it is carried out the while sintering.For integrated by sintering and ceramic dielectric, the interior electrode layer of multi-layer ceramic capacitor must be selected not the material with the ceramic dielectric reaction.Therefore, as the material that constitutes interior electrode layer, thought in the past and can only use precious metal at high price such as platinum or palladium.
But, developed the dielectric ceramic composition that can use cheap base metal such as nickel, copper in recent years, cost is significantly reduced.
In addition, very high along with the densification of electronic circuit in recent years to the requirement of the miniaturization of electronic unit, the miniaturization of multi-layer ceramic capacitor, high capacity fast development.In order to make small-sized, the high capacity of multi-layer ceramic capacitor, generally be the method for taking to make the dielectric layer thin layerization, increase the method etc. of the relative permittivity of the contained dielectric ceramic composition of dielectric layer.But if make the dielectric layer attenuation, the electric field that puts on dielectric layer when applying volts DS strengthens, have relative permittivity through the time change, capacity through the time problem that is changed significantly and increases.
For improve capacity under the DC electric field through the time change, proposed to use the method (for example spy open flat 8-124785 communique) of the little insulating particles of average crystallite particle diameter as the contained insulating particles of dielectric layer.Open in the flat 8-124785 communique described spy, disclosing the average crystallite particle diameter with specific composition, insulating particles is the following dielectric ceramic composition of 0.45 μ m.But the dielectric ceramic composition of document record is difficult to adapt to miniaturization, high capacity because relative permittivity is low excessively.
In addition, the applicant is divided into 2 groups in the effective ionic radius value that the spy opens when disclosing rare earth element according to 9 coordinations in the 2005-29423 communique, the addition that makes the addition that belongs to one group element in 2 groups and belong to other one group element is in specific scope, and the ratio of addition that further makes them is in specific scope, discloses the electronic units such as multi-layer ceramic capacitor that the accelerated aging that makes relative permittivity, insulation resistance (IR) improves thus.
But,, produced the needs that multi-layer ceramic capacitor will adapt with more miniaturization, high capacity along with the fast development of electronic unit miniaturization.As mentioned above, as the method that multi-layer ceramic capacitor and miniaturization, high capacity are adapted, adopt the method that makes the dielectric layer thin layerization, the method that improves relative permittivity.When making the dielectric layer thin layer, require relative permittivity through the time change or other characteristics (temperature profile of electrostatic capacity, IR accelerated aging etc.) and thin layerization before equal or than its height.Therefore, to adapt with miniaturization, the high capacity of multi-layer ceramic capacitor, requirement keep various characteristics (relative permittivity through the time change, the temperature profile of electrostatic capacity, IR accelerated aging etc.) in, make the further thin layerization of dielectric layer, and relative permittivity is improved.
The purposes of multi-layer ceramic capacitor is a lot, and desired characteristic is also very wide.Therefore, even, when keeping high characteristic, also require to form design according to desired particular characteristics for the dielectric ceramic composition that constitutes dielectric layer.But, open in the dielectric ceramic composition of 2005-29423 communique the spy, owing to be limited to the good situation of service performance,, there is the insufficient tendency of flexibility when obtaining the characteristic according to purposes.
Summary of the invention
The present invention carries out in view of this practical situation, even purpose is that it is the situation of various compositions that the principal constituent of dielectric ceramic composition is provided, also can be with the dielectric layer thin layerization, obtain the temperature profile of high relative permittivity and good electrostatic capacity, can improve the dielectric ceramic composition and the manufacture method thereof of reliability.In addition, the present invention also aims to provide electronic units such as multi-layer ceramic capacitor with the dielectric layer that constitutes by this dielectric ceramic composition.
The inventor finds, with various compounds with perovskite typed crystalline texture during as principal constituent, adopt following method: the principal constituent raw material is divided into the 1st principal constituent raw material and the 2nd principal constituent raw material, the 1st principal constituent raw material and the oxide raw material of the rare earth element that adds as minor component are reacted, make the raw material that reacted, in the raw material that this reacted, add the method for the 2nd principal constituent raw material and remaining minor component raw material.In addition, in above-mentioned addition means, make the 1st principal constituent with respect to the overall ratio of principal constituent in specific scope.Its result can keep the temperature profile of relative permittivity, electrostatic capacity, can make specific characteristic (dissipation loss, CR long-pending etc.) good simultaneously.
The inventor finds, effective ionic radius with above-mentioned rare earth element during according to 9 coordinations is divided into 2 groups, be selected from the addition means of the oxide compound of the element in 2 groups any 1 group or 2 groups by regulation, in the dielectric ceramic composition that finally obtains, the ratio of the mole number that belongs to 1 group element in above-mentioned 2 groups and the mole number that belongs to other 1 group element is in the scope of regulation, can further improve above-mentioned effect, thereby finish the present invention.
The manufacture method of the dielectric ceramic composition of a first aspect of the present invention, it is a method of making the dielectric ceramic composition that contains following compositions, described composition contains:
Contain and have general formula ABO 3(wherein, A be Ba separately or Ba and Ca compound, B be Ti separately or Ti and Zr compound) shown in the principal constituent of compound of perovskite typed crystalline texture; With
The 4th minor component that contains the oxide compound (wherein, R is be selected from Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu at least a) of R,
It is characterized in that this method comprises following operation:
The operation that above-mentioned principal constituent raw material is divided into 2 groups of the 1st principal constituent raw material and the 2nd principal constituent raw materials;
Above-mentioned the 4th minor component part of raw materials that makes above-mentioned the 1st principal constituent raw material and will be included in the above-mentioned dielectric ceramic composition is reacted the operation of the raw material that obtains reacting in advance; With
In the raw material of above-mentioned reaction, add the 2nd principal constituent raw material and will be included in the operation of remaining above-mentioned the 4th minor component raw material in the above-mentioned dielectric ceramic composition,
The mole number of above-mentioned the 1st principal constituent is that the mole number of n1, above-mentioned the 2nd principal constituent is when being n2, above-mentioned the 1st principal constituent is 0.5≤n1/ (n1+n2)≤1 with respect to the ratio of the total mole number of above-mentioned the 1st principal constituent and above-mentioned the 2nd principal constituent, preferred 0.5＜n1/ (n1+n2)＜1, more preferably 0.75≤n1/ (n1+n2)≤0.90.
In first aspect, it is characterized in that, above-mentioned principal constituent raw material is divided into the 1st principal constituent raw material and the 2nd principal constituent raw material, the part of raw materials of the 1st principal constituent raw material and above-mentioned the 4th minor component is reacted in advance, and then making the 1st principal constituent ratio overall with respect to above-mentioned principal constituent is above-mentioned scope.When making the reaction of principal constituent raw material and the 4th minor component part of raw materials, can improve multifrequency nature, but, can see that also some characteristic degenerates by making its reaction.Therefore, do not make the whole of principal constituent raw material and the 4th minor component raw material reaction, but make principal constituent part of raw materials (the 1st principal constituent) and the 4th minor component raw material reaction, the raw material that obtains reacting.In the raw material of this reaction, add the 2nd principal constituent raw material of keeping characteristic, can realize desired characteristic thus, and then also can make specific characteristic good from the principal constituent raw material.
By making the part reaction of above-mentioned the 1st principal constituent and above-mentioned the 4th minor component, can obtain making above-mentioned the 4th minor component to be present in the raw material of the reaction of above-mentioned the 1st principal constituent particle inside at least.
In the first aspect, for the raw material of the above-mentioned reaction that obtains, at least the 4 minor component may reside in the inside of principal constituent particle.That is to say, for example both can exist unevenly at inner the 4th minor component of principal constituent particle, also can exist equably, in addition, also can be that it contains the proportional mode that slowly changes.
Afterwards, in the raw material of the above-mentioned reaction that obtains, add above-mentioned the 2nd principal constituent, will be included in remaining above-mentioned the 4th minor component in the above-mentioned dielectric ceramic composition.Thus, can make the temperature profile etc. of relative permittivity, electrostatic capacity good, also can make other characteristics, for example dielectric loss, CR are long-pending good.
And, as the principal constituent raw material, can use above-mentioned various compounds with perovskite typed crystalline texture.Its result, can make can be neatly corresponding to the dielectric ceramic composition of desired characteristic.
In first aspect, preferably make at least a portion solid solution in advance of above-mentioned the 1st principal constituent raw material and above-mentioned the 4th minor component raw material, use the raw material of above-mentioned reaction.Thus, can in above-mentioned principal constituent, make above-mentioned the 4th minor component solid solution equably, above-mentioned characteristic is improved.
In first aspect, reaction is to comprise the notion of solid solution, coating etc. and use, and comprises being used to form in the inner method that has the state of the 4th minor component of the 1st principal constituent.
In first aspect, in the above-mentioned dielectric ceramic composition that finally obtains, with respect to 100 moles of above-mentioned principal constituents, the content of above-mentioned the 4th minor component is preferably 0.1～10 mole in R, more preferably 0.2～6 mole.
Content by making the 4th minor component that dielectric ceramic composition contains can improve the temperature profile of electrostatic capacity in above-mentioned scope.When the content of the 4th minor component is very few, then can not get the additive effect of the 4th minor component, there is the tendency that degenerates in the temperature profile of electrostatic capacity, on the other hand, when content is too much, the tendency that then exists coking property to degenerate.
In first aspect, preferably with respect to 100 moles of above-mentioned principal constituents, above-mentioned the 4th minor component that reacts in advance with above-mentioned the 1st principal constituent raw material is preferably 0～0.5 mole (wherein, not comprising 0) in R.
Perhaps, in the present invention, preferably with respect to 100 moles of % of the total amount that will finally be included in above-mentioned the 4th minor component in the above-mentioned dielectric ceramic composition, in R, the ratio of above-mentioned the 4th minor component that reacts in advance with above-mentioned the 1st principal constituent raw material is preferably 0～50 mole of % (wherein, do not comprise 0), more preferably 0～25 mole of % (wherein, not comprising 0).
The amount of above-mentioned the 4th minor component raw material that reacts in advance with above-mentioned the 1st principal constituent raw material is too much, and then the crystallization particle diameter of the sintered compact that obtains behind the sintering becomes excessive, has the tendency that temperature profile degenerates, insulation resistance (IR) reduces.
The manufacture method of the dielectric ceramic composition of second aspect, it is a method of making the dielectric ceramic composition that contains following compositions, described composition contains:
Contain and have general formula ABO 3(wherein, A be Ba separately or Ba and Ca compound, B be Ti separately or Ti and Zr compound) shown in the principal constituent of compound of perovskite typed crystalline texture;
Contain R1 oxide compound (wherein, R1 is at least a less than the rare earth element of 108pm of effective ionic radius when being selected from 9 coordinations) the 4a minor component and
The 4b minor component that contains the oxide compound (wherein, R2 is that the effective ionic radius when being selected from 9 coordinations is rare earth element at least a of 108pm～113pm) of R2,
It is characterized in that this method comprises following operation:
The operation that above-mentioned principal constituent raw material is divided into 2 groups of the 1st principal constituent raw material and the 2nd principal constituent raw materials;
Make above-mentioned the 1st principal constituent raw material and the above-mentioned 4a minor component part of raw materials and/or the above-mentioned 4b minor component part of raw materials that will be included in the above-mentioned dielectric ceramic composition react the operation of the raw material that obtains reacting in advance; With
In the raw material of above-mentioned reaction, add above-mentioned the 2nd principal constituent raw material, will be included in remaining the above-mentioned 4a minor component in the above-mentioned dielectric ceramic composition and the operation of above-mentioned 4b minor component raw material,
In the above-mentioned dielectric ceramic composition that finally obtains, the mole number M2 of above-mentioned 4b minor component R2 satisfies with respect to the ratio M2/M1 of the mole number M1 of above-mentioned 4a minor component R1: 0≤M2/M1≤0.25,
The mole number of above-mentioned the 1st principal constituent is that the mole number of n1, above-mentioned the 2nd principal constituent is when being n2, above-mentioned the 1st principal constituent is 0.5≤n1/ (n1+n2)≤1 with respect to the ratio of the total mole number of above-mentioned the 1st principal constituent and above-mentioned the 2nd principal constituent, preferred 0.5＜n1/ (n1+n2)＜1, more preferably 0.75≤n1/ (n1+n2)≤0.90.
In second aspect, the effective ionic radius value during according to 9 coordinations of R element is divided into R1 and R2 with the R in the first aspect, and the minor component of oxide compound that will contain R1 is as the 4a minor component, and the minor component of oxide compound that will contain R2 is as the 4b minor component.And, same with the 1st aspect, it is characterized in that, above-mentioned principal constituent raw material is divided into the 1st principal constituent raw material and the 2nd principal constituent raw material, above-mentioned the 1st principal constituent raw material and above-mentioned 4a minor component part of raw materials and/or 4b minor component part of raw materials are reacted in advance.And then, be above-mentioned scope by making the 1st principal constituent ratio overall with respect to above-mentioned principal constituent, can realize high relative dielectric constant, good temperature profile, IR life-span etc., also can make other characteristics, for example dielectric loss, CR are long-pending good.
Same with the 1st aspect, when the 1st principal constituent raw material and above-mentioned 4a minor component part of raw materials and/or 4b minor component part of raw materials are reacted in advance, can improve multifrequency nature, but, can see that also some characteristic degenerates by making its reaction.Therefore, with the 1st principal constituent and nonreactive the 2nd principal constituent, the characteristic that will degenerate is minimized by also, described the 1st principal constituent is the 1st principal constituent of reacting with 4a minor component and/or 4b minor component.
By above-mentioned the 1st principal constituent raw material and above-mentioned 4a minor component part of raw materials and/or 4b minor component part of raw materials are reacted in advance, can obtain making above-mentioned 4a minor component and/or above-mentioned 4b minor component to be present in the raw material of the reaction of above-mentioned the 1st principal constituent particle inside at least.
In the second aspect, in the raw material of resulting above-mentioned reaction, at least the 4a minor component and/or 4b minor component are present in the 1st principal constituent particle inside and get final product.That is to say that same with first aspect, for example, in the 1st principal constituent particle inside, above-mentioned 4a minor component and/or above-mentioned 4b minor component both can exist unevenly, also can exist equably, in addition, also can be that it contains the proportional mode that slowly changes.
Then, in the raw material of the above-mentioned reaction that obtains, add above-mentioned the 2nd principal constituent raw material, will be included in remaining above-mentioned 4a minor component and 4b minor component in the dielectric ceramic composition, in the dielectric ceramic composition that finally obtains, the mole number M2 of the R2 of above-mentioned 4b minor component with respect to the ratio (M2/M1) of the mole number M1 of the R1 of above-mentioned 4a minor component in above-mentioned scope.
As above-mentioned, relative permittivity is improved, make the temperature profile of electrostatic capacity good, other characteristics for example can make dielectric loss reduce, make CR long-pending good simultaneously.
And, as the principal constituent raw material, can use above-mentioned various compounds with perovskite typed crystalline texture.Its result, can make can be neatly corresponding to the dielectric ceramic composition of desired characteristic.
In second aspect, preferably make above-mentioned the 1st principal constituent raw material and above-mentioned 4a minor component part of raw materials and/or the solid solution in advance of above-mentioned 4b minor component part of raw materials.Thus, can make above-mentioned 4a minor component and/or above-mentioned 4b minor component equably solid solution in above-mentioned the 1st principal constituent, can further improve above-mentioned characteristic.
In second aspect, reaction is to comprise the notion of solid solution, coating etc. and use, and comprises being used to form in the inner method that has the state of 4a minor component and/or 4b minor component of the 1st principal constituent.
In second aspect, in the above-mentioned dielectric ceramic composition that finally obtains, with respect to 100 moles of above-mentioned principal constituents, the content of above-mentioned 4a minor component is preferably 0～10 mole (wherein, not comprising 0) in R1.As the lower value of above-mentioned 4a minor component content, in R1, more preferably more than 0.1 mole, more preferably more than 0.2 mole.In addition, as the higher limit of the content of above-mentioned 4a minor component, in R1, more preferably below 6 moles, more preferably below 5 moles.
In addition, in the above-mentioned dielectric ceramic composition that finally obtains, with respect to 100 moles of above-mentioned principal constituents, the content of above-mentioned 4b minor component is preferably 0～2 mole (wherein, not comprising 0), more preferably 0～1 mole (wherein, not comprising 0) in R2.
In second aspect, the content by making 4a minor component contained in the dielectric ceramic composition that finally obtains and 4b minor component can be taken into account the temperature profile of relative permittivity and electrostatic capacity in above-mentioned scope, further makes the IR accelerated aging good.If the content of 4a minor component is very few, then can not get improving the effect of the temperature profile of electrostatic capacity, on the other hand, if the content of 4a minor component is too much, then coking property has the tendency of variation.In addition,, then can not get the effect of improving of IR and IR accelerated aging if the content of 4b minor component is very few, and if the content of 4b minor component is too much, then the temperature profile of electrostatic capacity has the tendency of variation.
In second aspect, with respect to 100 moles of above-mentioned principal constituents, above-mentioned 4a minor component that reacts in advance with above-mentioned the 1st principal constituent raw material and/or 4b minor component are in R1 and/or R2, be preferably 0～0.5 mole (wherein, do not comprise 0), more preferably 0～0.4 mole (wherein, not comprising 0).
If the above-mentioned 4a minor component that reacts in advance with above-mentioned the 1st principal constituent raw material and/or the amount of above-mentioned 4b minor component raw material are too much, then the crystallization particle diameter of the sintered compact that obtains behind the sintering becomes excessive, and the temperature profile variation of electrostatic capacity, the tendency that the IR accelerated aging reduces are arranged.
In second aspect, if the effective ionic radius when constituting rare earth element 9 coordinations of above-mentioned R1 is r1, if the effective ionic radius when constituting rare earth element 9 coordinations of above-mentioned R2 is r2, preferably select above-mentioned R1 and above-mentioned R2 to make the ratio (r2/r1) of r1 and r2 satisfy the relation of 1.007＜r2/r1＜1.06.
In second aspect, preferred above-mentioned R1 is selected from Y, Ho, Er, Tm, Yb and Lu at least a kind.
In second aspect, preferred above-mentioned R2 is selected from Dy, Tb, Gd and Eu at least a kind.
The ratio of the effective ionic radius when making 9 coordinations of R1 and R2 is in above-mentioned scope, and to make R1 and R2 be above-mentioned formation, can make effect of the present invention bigger.
Be noted that the effective ionic radius of putting down in writing in this specification sheets is the value based on document " R.D.Shannon, Acta Crystallogr., A32,751 (1976) ".
In aspect first and second, preferred above-mentioned principal constituent contains barium titanate.
In aspect first and second, preferred above-mentioned dielectric ceramic composition also contains following compositions:
Contain at least a kind the 1st minor component being selected from MgO, CaO, BaO and SrO,
Mainly contain SiO 2, and contain and be selected from MO (wherein, M is selected from Mg, Ca, Ba and Sr at least a kind), Li 2O and B 2O 3At least a kind the 2nd minor component and
Contain and be selected from V 2O 5, MoO 3And WO 3At least a kind the 3rd minor component,
With respect to 100 moles of above-mentioned principal constituents, the ratio of each minor component is:
The 1st minor component: 0.1～5 mole,
The 2nd minor component: 0.1～12 mole,
The 3rd minor component: 0～0.3 mole (wherein, not comprising 0).
In any one party face aspect first and second, preferred above-mentioned dielectric ceramic composition also contains the 5th minor component, and the 5th minor component contains MnO and/or Cr 2O 3, with respect to 100 moles of above-mentioned principal constituents, the ratio of the 5th minor component is 0.05～1.0 mole.
In first aspect, except containing above-mentioned the 4th minor component, also contain above-mentioned the 1st～the 3rd minor component (more preferably also containing the 5th minor component), can improve the temperature profile of electrostatic capacity thus, particularly can satisfy the X7R characteristic (55～125 ℃, in Δ C=± 15%) of EIA standard.
In second aspect, except containing above-mentioned 4a minor component and 4b minor component, also contain above-mentioned the 1st～the 3rd minor component (more preferably also containing the 5th minor component), can improve the temperature profile of electrostatic capacity thus, particularly can satisfy the X7R characteristic (55～125 ℃, in Δ C=± 15%) of EIA standard.Be noted that the interpolation to above-mentioned the the 1st～the 3rd, the 5th minor component is not particularly limited opportunity, but preferably above-mentioned the the 1st～the 3rd, the 5th minor component made an addition in the raw material of the reaction that obtains after the reaction in advance.
In any one party face aspect first and second,, use median size to be preferably 0.05～0.5 μ m, the raw material of 0.1～0.4 μ m more preferably as above-mentioned principal constituent raw material.By using the principal constituent raw material of median size in above-mentioned scope, can be with preferred fine 0.1～0.3 μ m that turns to of the average crystallite particle diameter of the insulating particles behind the sintering, therefore can reduce relative permittivity through the time change.
The dielectric ceramic composition of dielectric ceramic composition of the present invention for making with any means of above-mentioned record.
Electronic unit of the present invention has the dielectric layer that above-mentioned dielectric ceramic composition constitutes.As electronic unit, be not particularly limited, can enumerate multi-layer ceramic capacitor, piezoelectric element, chip inductor, chip variable resistor, slice heat sensitive resistor, plate resistor, other surface mounting (SMD) chip electronic parts.
According to the present invention, dielectric ceramic composition and manufacture method thereof are provided, above-mentioned principal constituent raw material is divided into the 1st principal constituent raw material and the 2nd principal constituent raw material, make the 1st principal constituent with respect to the ratio of the total mole number of the 1st principal constituent and the 2nd principal constituent in above-mentioned scope, only make the 1st principal constituent raw material and oxide compound (the 4th minor component) raw material reaction, make the raw material that reacted as the rare earth element of minor component.In the raw material that this reacted, add the 2nd principal constituent and remaining minor component, by also using raw material and the 2nd principal constituent raw material that reacted, the characteristic that can keep relative permittivity, IR life-span etc. is good, can make simultaneously specific characteristic (dissipation loss, CR long-pending etc.) good.
Further, the effective ionic radius with above-mentioned rare earth element during according to 9 coordinations of rare earth element is divided into R1 and R2, and the minor component of oxide compound that will contain R1 is as the 4a minor component, and the minor component of oxide compound that will contain R2 is as the 4b minor component.Then, making the addition means of the oxide compound of the element that is selected from 4a minor component and 4b minor component any one party or two sides is aforesaid method, in the dielectric ceramic composition that finally obtains, the mole number M2 of R2 by making above-mentioned 4b minor component in above-mentioned scope, can further increase above-mentioned effect with respect to the ratio (M2/M1) of the mole number M1 of the R1 of above-mentioned 4a minor component thus.
Description of drawings
Following embodiment explanation the present invention with reference to accompanying drawing.
Fig. 1 is the sectional view of the multi-layer ceramic capacitor of an embodiment of the invention.
Embodiment
Multi-layer ceramic capacitor 1
As shown in Figure 1, the multi-layer ceramic capacitor 1 of an embodiment of the invention has by dielectric layer 2 and the interior electrode layer 3 alternately laminated capacitor element bodies 10 that constitute.Be formed with pair of external electrodes 4 at the both ends of this capacitor element body 10, this pair of external electrodes 4 is distinguished conductings with the interior electrode layer 3 in the inside of component body 10 alternately configured.Shape to capacitor element body 10 is not particularly limited, and is generally cuboid.In addition, its size also is not particularly limited, makes suitable size according to purposes and get final product.
Interior electrode layer 3 alternately exposes in the mode of 2 relative end surfaces of capacitor element body 10 stacked with each end face.Pair of external electrodes 4 is formed at the both ends of capacitor element body 10, is connected with the end face that exposes of the interior electrode layer 3 of alternately configured, forms capacitor circuit.
Dielectric layer 2
Dielectric layer 2 contains the dielectric ceramic composition of first aspect present invention shown below and second aspect.
The dielectric ceramic composition of first aspect, it contains at least: contain and have general formula ABO 3(wherein, A be Ba separately or Ba and Ca compound, B be Ti separately or Ti and Zr compound) shown in the principal constituent of compound of perovskite typed crystalline texture; The 4th minor component with the oxide compound that contains R (wherein, R is be selected from Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu at least a).At this moment, oxygen (O) amount can depart from the stoichiometric composition of above-mentioned formula a little.
In first aspect, contain the 4th minor component, in manufacture method described later,, can improve various characteristics, particularly relative permittivity, IR life-span etc. by adopting the addition means of regulation.Below describe principal constituent and the 4th minor component in detail.
Particularly, principal constituent is for having composition formula (Ba 1-xCa x) (Ti 1-yZr y) O 3The compound of shown perovskite typed crystalline texture.Contain barium titanate in the preferred principal constituent.
In the present embodiment, in the above-mentioned formula, x is 0≤x≤0.2, preferred 0≤x≤0.15, more preferably 0≤x≤0.10.X represents the Ca atomicity, by making x in above-mentioned scope, can control temperature coefficient of capacity, relative permittivity arbitrarily.If x is excessive, the tendency that then exists relative permittivity to reduce.On the other hand, if x is too small, the tendency that then exists capacity temperature characteristic to degenerate.But, in the present invention, can not necessarily must contain Ca, can only contain Ba and get final product.
In the present embodiment, in the above-mentioned formula, y is 0≤y≤0.2, preferred 0≤y≤0.15, more preferably 0≤y≤0.10.Y represents the Zr atomicity, by displacement and TiO 2Compare the ZrO that is difficult for being reduced 2, the tendency that has reducing resistance to increase.But, in the present invention, can not necessarily must contain Zr, can only contain Ti and get final product.
The 1st principal constituent and the 2nd principal constituent can be inequality.For example, the 1st principal constituent is BaTiO 3, the 2nd principal constituent is (Ba 0.9Ca 0.1) (Ti 0.9Zr 0.1) O 3, can suitably determine according to desired characteristic.
The 4th minor component is the minor component that contains the oxide compound of R.The R element of the oxide compound of R is at least a element that is selected from Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, among them, preferred Y, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, more preferably Y, Tb, Yb.
The 4th minor component has the effect that IR accelerated aging characteristic is improved.The content of the 4th minor component is preferably 0.1～10 mole in R, more preferably 0.2～6 mole.If content is very few, then can not get the additive effect of the 4th minor component, the capacity temperature characteristic variation.And if content is too much, then coking property has the tendency of variation.Describe in detail as the back, in the manufacture method of present embodiment, adopt to make at least a portion of above-mentioned the 4th minor component raw material and the operation that the 1st principal constituent raw material reacts in advance.
The dielectric ceramic composition of second aspect, it contains at least: contain and have general formula ABO 3(wherein, A be Ba separately or Ba and Ca compound, B be Ti separately or Ti and Zr compound) shown in the principal constituent of compound of perovskite typed crystalline texture; 4a minor component with the oxide compound of R1 contained in the oxide compound of above-mentioned R (wherein, R1 is at least a of the 1st element set that constitutes less than the rare earth element of 108pm of the effective ionic radius when being selected from by 9 coordinations); The 4b minor component of the oxide compound of contained R2 in the oxide compound of above-mentioned R (wherein, R2 is that the effective ionic radius when being selected from by 9 coordinations is at least a of the 2nd element set that constitutes of the rare earth element of 108pm～113pm).At this moment, oxygen (O) amount can depart from the stoichiometric composition of above-mentioned formula a little.
In second aspect, contain 4a minor component and 4b minor component, adopt the addition means of aftermentioned regulation, and then the mol ratio that makes R1 (4a minor component) and R2 (4b minor component) can be improved various characteristics, particularly relative permittivity, IR life-span etc. in specialized range.Explanation with first aspect is as the criterion about the detailed description of principal constituent.Below, describe 4a minor component and 4b minor component in detail.
The 4a minor component is contained in the 4th minor component, is the minor component that contains the oxide compound of R1.R1 is selected from least a kind of the 1st element set, comprises Y (107.5pm), Ho (107.2pm), Er (106.2pm), Tm (105.2pm), Yb (104.2pm) and Lu (103.2pm) in the 1st element set.Wherein, preferred Y, Yb, Er, more preferably Y, Yb.
The 4a minor component has the effect of the temperature profile planarization of the electrostatic capacity of making.The content of 4a minor component is preferably 0～10 mole (wherein, not comprising 0) in R1.As the lower value of content, in R1 more preferably more than 0.1 mole, more preferably more than 0.2 mole.In addition, as the higher limit of content, in R1 more preferably below 6 moles, more preferably below 5 moles.If content is very few, then can not get the additive effect of 4a minor component, the temperature profile variation of electrostatic capacity.And if content is too much, then coking property has the tendency of variation.
The 4b minor component is contained in the 4th minor component, is the minor component that contains the oxide compound of R2.R2 is selected from least a kind of the 2nd element set, comprises Dy (108.3pm), Tb (109.5pm), Gd (110.7pm) and Eu (112pm) in the 2nd element set.Wherein, preferred Tb, Gd, Eu, more preferably Tb, Gd.
The 4b minor component has the effect of improving IR, IR accelerated aging.The content of 4b minor component is preferably 0～2 mole (wherein, not comprising 0) in R2, more preferably 0～1 mole (wherein, not comprising 0), more preferably 0～0.5 mole (wherein, not comprising 0).If content is very few, then can not get the effect of improving in IR and IR life-span, and if content is too much, then capacity temperature characteristic has the tendency of variation.Be noted that as described later, in the manufacture method of present embodiment, adopt above-mentioned 4a minor component part of raw materials and/or above-mentioned 4b minor component part of raw materials in advance with the operation of the 1st principal constituent raw material reaction.
In second aspect, the ratio (M2/M1) of the mole number M2 of the R2 in the mole number M1 of the R1 in the 4a minor component and the 4b minor component satisfies: 0≤M2/M1≤0.25, more preferably satisfy 0≤M2/M1≤0.20, and further preferably satisfy 0≤M2/M1≤0.15.
In second aspect, if the effective ionic radius when constituting rare earth element 9 coordinations of above-mentioned the 1st element set is r1, when the effective ionic radius when constituting rare earth element 9 coordinations of above-mentioned the 2nd element set was r2, the formation of preferred above-mentioned the 1st element set and above-mentioned the 2nd element set made the ratio (r2/r1) of r1 and r2 satisfy the relation of 1.007＜r2/r1＜1.06.For example, as preferred combination, can enumerate the combination of Y (R1) and Gd (R2).
The dielectric ceramic composition of first aspect and second aspect preferably also contains the the 1st～the 3rd, the 5th following minor component.
That is, preferably also contain the 1st minor component, the 2nd minor component, the 3rd minor component and the 5th minor component, described the 1st minor component contains at least a kind that is selected from MgO, CaO, BaO and SrO; Described the 2nd minor component mainly contains SiO 2, and contain and be selected from MO (wherein, M is selected from Mg, Ca, Ba and Sr at least a kind), Li 2O and B 2O 3At least a kind; Described the 3rd minor component contains and is selected from V 2O 5, MoO 3And WO 3At least a kind; Described the 5th minor component contains MnO and/or Cr 2O 3
With respect to 100 moles of above-mentioned principal constituents, in each oxide compound, above-mentioned each minor component with respect to the ratio of above-mentioned principal constituent is:
The 1st minor component: 0.1～5 mole,
The 2nd minor component: 0.1～12 mole,
The 3rd minor component: 0～0.3 mole (wherein, not comprising 0).
The 5th minor component: 0.05～1.0 mole,
Preferably:
The 1st minor component: 0.2～4 mole,
The 2nd minor component: 0.5～6 mole,
The 3rd minor component: 0～0.25 mole (wherein, not comprising 0).
The 5th minor component: 0.05～0.4 mole.
In the dielectric ceramic composition of first aspect and second aspect, also contain above-mentioned the the 1st～the 3rd, the 5th minor component, the temperature profile of electrostatic capacity can be improved thus, its X7R characteristic that preferably satisfies the EIA standard (55～125 ℃, in Δ C=± 15%) can be made.
Each oxide compound that constitutes principal constituent and each minor component is in this manual represented with stoichiometric composition, but the state of oxidation of each oxide compound also can nonstoichiometry be formed.The aforementioned proportion of each minor component is that the oxide compound that the amount of metal that contains from the oxide compound that constitutes each minor component is scaled above-mentioned stoichiometric composition is tried to achieve.
The qualification of the content of above-mentioned each minor component be the reasons are as follows.
The 1st minor component (MgO, CaO, BaO and SrO) if content very few, then the rate of temperature change of electrostatic capacity becomes big.On the other hand, if content is too much, then coking property degenerates, and the IR accelerated aging has the tendency that degenerates simultaneously.The composition that is noted that each oxide compound in the 1st minor component is arbitrarily.
The 2nd minor component contains SiO 2Be principal constituent, and contain and be selected from MO (wherein, M is selected from Mg, Ca, Ba and Sr at least a kind), Li 2O and B 2O 3At least a kind.The 2nd minor component mainly plays sintering aid.Also contain MO (wherein, M is selected from Mg, Ca, Ba and Sr at least a kind) in the 1st minor component, but by making and SiO 2Composite oxides, with composition formula M xSiO 2+xThe compound of expression can reduce fusing point.And,, can improve reactivity to principal constituent owing to can reduce fusing point.Be noted that as above-mentioned MO, when for example using BaO and CaO, above-mentioned composite oxides preferably make with composition formula (Ba, Ca) xSiO 2+xThe compound of expression.Composition formula (Ba, Ca) xSiO 2+xIn x be preferably 0.8～1.2, more preferably 0.9～1.1.If x is too small, i.e. SiO 2Too much, then with principal constituent Ba mTiO 2+mReaction degenerates dielectric characteristic.And if x is excessive, then fusing point raises, and coking property degenerates, thereby not preferred.
The 3rd minor component (V 2O 5, MoO 3And WO 3) have the smooth effect of the temperature profile that makes the above electrostatic capacity of Curie temperature and improve the effect of IR accelerated aging.If the content of the 3rd minor component is very few, then this effect is insufficient.And if content is too much, then IR significantly reduces.The composition of each oxide compound in the 3rd minor component is arbitrarily.
The 5th minor component (MnO and Cr 2O 3) make Curie temperature to the effect of high temperature side displacement except having, also have the electrostatic capacity of making the temperature profile planarization, improve insulation resistance (IR), improve disintegration voltage, reduce effects such as sintering temperature.
Average crystallite particle diameter to the contained insulating particles of dielectric ceramic composition is not particularly limited, and is preferably 0.1～0.3 μ m.If median size is too small, then relative permittivity has the tendency of reduction, if excessive, then relative permittivity through the time change the tendency that becomes greatly arranged.The average crystallite particle diameter of insulating particles for example can utilize the SEM picture of insulating particles to be assumed to the コ one De method mensuration that ball is measured the averaged particles footpath by the shape with insulating particles.
Thickness to dielectric layer 2 is not particularly limited, and preferred every layer is below the 10 μ m, more preferably below the 6 μ m, more preferably below the 4.5 μ m.Lower limit to thickness is not particularly limited, and for example is about 0.5 μ m.
Lamination number to dielectric layer 2 is not particularly limited, and is preferably more than 20, more preferably more than 50, is preferably more than 100 especially.The upper limit to the lamination number is not particularly limited, and for example is about 2000.
Interior electrode layer 3
Interior electrode layer 3 contained electro-conductive materials are not particularly limited,, therefore can use comparatively cheap base metal because the constituent material of dielectric layer 2 has reducing resistance.Preferred Ni of base metal or Ni alloy as electro-conductive material.As the Ni alloy, be preferably selected from element more than a kind among Mn, Cr, Co and the Al and the alloy of Ni, the Ni content in the preferred alloy is more than the 95 weight %.Be noted that and contain various trace elements such as P following about 0.1 weight % in Ni or the Ni alloy.The thickness of interior electrode layer 3 can suitably be determined according to purposes etc., is generally 0.1～3 μ m, is preferably especially about 0.2～2.0 μ m.
Outer electrode 4
Outer electrode 4 contained electro-conductive materials are not particularly limited, can use cheap Ni, Cu or their alloy in the present invention.The thickness of outer electrode 4 can suitably be determined according to purposes etc., be preferably usually about 10～50 μ m.
The manufacture method of multi-layer ceramic capacitor
The multi-layer ceramic capacitor of present embodiment and multi-layer ceramic capacitor in the past are same, and make by the common print process, the slice method that use thickener and give birth to chip, behind its sintering, printing or coating outer electrode, and carry out sintering and make.Below specify the manufacture method of the dielectric ceramic composition of first aspect.
At first, the modulation electric medium layer contained dielectric ceramic composition powder of thickener.
In first aspect, the modulation of above-mentioned dielectric ceramic composition powder is following to be carried out.At first above-mentioned principal constituent raw material is divided into the 1st principal constituent raw material and the 2nd principal constituent raw material.
At this, the mole number of above-mentioned the 1st principal constituent is that the mole number of n1, above-mentioned the 2nd principal constituent is when being n2, above-mentioned the 1st principal constituent is 0.5≤n1/ (n1+n2)≤1 with respect to the ratio of the total mole number of above-mentioned the 1st principal constituent and above-mentioned the 2nd principal constituent, preferred 0.5＜n1/ (n1+n2)＜1.0, more preferably 0.75≤n1/ (n1+n2)≤0.90, further preferred 0.8≤n1/ (n1+n2)≤0.90.N1/ (n1+n2) is too small, then has the tendency that relative permittivity, IR life-span degenerate.By making n1/ (n1+n2), can make CR long-pending good in preferred range.
Then, only make the 1st principal constituent raw material and above-mentioned the 4th minor component part of raw materials (raw material of the part in the 4th minor component that is equivalent to contain in the dielectric ceramic composition) solid solution in advance, the raw material that obtains reacting.Then, in the raw material that this reacted, add above-mentioned the 2nd principal constituent raw material, remaining the 4th minor component raw material (will constitute remaining raw material in the 4th minor component of dielectric ceramic composition) and above-mentioned the the 1st～the 3rd, the 5th minor component raw material, carry out pre-burning as required, thus modulation electric dielectric ceramic composition powder.
As above-mentioned principal constituent raw material, can use above-mentioned BaTiO 3, CaTiO 3, BaZr O 3And CaZrO 3Powder or will become the powder of the compound of above-mentioned oxide compound, preferred BaTiO by sintering 3Powder or will become the powder of the compound of above-mentioned oxide compound by sintering.The median size of principal constituent raw material is preferably 0.05～0.5 μ m, more preferably 0.1～0.4 μ m.If the median size of principal constituent raw material is excessive, then the average crystallite particle diameter of the insulating particles behind the sintering becomes excessive, and the tendency that temperature profile degenerates, insulation resistance (IR) reduces is arranged.And if median size is too small, the oxide compound that R then arranged is to the solid solution of the principal constituent raw material uneven tendency that becomes.In the present embodiment, median size is represented volume reference accumulation 50% footpath (D50 footpath), can utilize the method for scattering of light to measure by laser diffractometry etc.
As the 4th minor component raw material that reacts in advance with above-mentioned the 1st principal constituent raw material, can use the oxide compound of above-mentioned R or will become all cpds of the oxide compound of R by sintering.As the oxide compound of R, will become the compound of the oxide compound of R by sintering, can use median size is dusty raw materials about 0.01～0.1 μ m or following molten gelationus raw material of enumerating etc.
Colloidal sol shape raw material is not particularly limited, for example can enumerates hydroxide sol, oxide sol etc.In addition, the colloidal sol particle diameter of colloidal sol shape raw material is generally about 1～100nm, as solvent, can enumerate alcohols such as water, or methyl alcohol, ethanol; Aromatic solvent such as dimethylbenzene, toluene; Organic solvents such as ketone such as methyl ethyl ketone.
The above-mentioned compound that will become the oxide compound of R by sintering is not particularly limited, can enumerates the alkoxide of R, the inorganic acid salt of R etc.The alkoxide of R is the compound of pure and mild R element, is in particular the compound that the hydrogen of alcoholic extract hydroxyl group is replaced by R.Alkoxide as R is not particularly limited, and can use general formula C nH 2n+1The all cpds of OR (n is 1～9 integer) expression can be enumerated CH 3OR, C 2H 5OR, n-C 3H 7OR, i-C 3H 7OR etc.
With respect to 100 moles of above-mentioned principal constituents, the 4th minor component raw material that reacts in advance with the 1st principal constituent raw material is preferably 0～0.5 mole (wherein not comprising 0), more preferably 0.01～0.2 mole in R.Perhaps, 100 moles of % of total amount with respect to the 4th minor component that in dielectric ceramic composition, comprises the most at last, the ratio of Fan Ying the 4th minor component raw material is in R in advance, preferred 0～50 mole of % (wherein not comprising 0), more preferably 0～25 mole of % (wherein not comprising 0), further preferred 0～15 mole of % (wherein not comprising 0).
If the amount of the 4th minor component raw material that reacts in advance with the 1st principal constituent raw material is too much, then the crystallization particle diameter of the sintered compact that obtains behind the sintering becomes excessive, and the temperature profile of electrostatic capacity degenerates, and insulation resistance (IR) has the tendency of reduction.
React the method for the raw material that obtains reacting in advance as making above-mentioned the 1st principal constituent raw material and above-mentioned the 4th minor component part of raw materials, can enumerate the 1st principal constituent raw material and above-mentioned the 4th minor component raw material with mixing such as solvents, make solvent evaporation, carry out the method for pre-burning or in mixing solutions, add precipitation agent etc., above-mentioned the 4th minor component is separated out on principal constituent, carry out the method for pre-burning etc.Temperature during pre-burning is preferably about 500～700 ℃.
Then, in the raw material of the reaction that obtains, add the 2nd principal constituent raw material, remaining the 4th minor component raw material (will constitute remaining raw material in the 4th minor component of dielectric ceramic composition) and above-mentioned the the 1st～the 3rd, the 5th minor component raw material, mix also then and carry out pre-burning as required, obtain the dielectric ceramic composition powder.
As above-mentioned, by and with the raw material (the 1st principal constituent+the 4th minor component) of the reaction that the 4th minor component reaction various characteristics is improved with from the 2nd principal constituent of keeping high characteristic of principal constituent, the characteristic that can keep relative permittivity, IR life-span etc. is good, simultaneously can make specific characteristic, raising such as for example dissipation loss, CR be long-pending.Its result is even during as principal constituent, also can keep good characteristic with various compounds with perovskite typed crystalline texture.
Remaining the 4th minor component raw material, the the 1st～the 3rd, the 5th minor component raw material can use above-mentioned oxide compound or its mixture, composite oxides, will become all cpds of above-mentioned oxide compound, composite oxides by sintering.
Then, make the dielectric layer thickener with the dielectric ceramic composition powder that obtains.Dielectric layer can be that dielectric ceramic composition powder and organic carrier are mediated the organic system coating that obtains with thickener, also can be the coating of water system.
Organic carrier is dissolved in tackiness agent in the organic solvent and obtains.The tackiness agent that is used for organic carrier is not particularly limited, can from common various tackiness agents such as ethyl cellulose, polyvinyl butyral acetal, suitably selects.In addition, the organic solvent that uses also is not particularly limited, the method that can be utilized according to print process, slice method etc. is suitably selected from various organic solvents such as terpinol, diethylene glycol monobutyl ether, acetone, toluene.
In addition, when dielectric layer is made aqueous coating with thickener, water miscible tackiness agent, dispersion agent etc. are dissolved in the water, water system carrier and the kneading of dielectric medium raw material that obtains got final product.The water-soluble binder that is used for the water system carrier is not particularly limited, for example can uses polyvinyl alcohol, Mierocrystalline cellulose, water soluble acrylic resin etc.
Interior electrode layer is with thickener such as modulated, will contain the various oxide compounds that will become above-mentioned electro-conductive material behind the electro-conductive material of above-mentioned various conductive metal or alloy or the sintering, organometallic compound, resinate etc. and mediate with above-mentioned organic carrier.
Outer electrode can similarly be modulated with thickener with above-mentioned interior electrode layer with thickener.
Content to the organic carrier in above-mentioned each thickener is not particularly limited, and common content for example tackiness agent is about 1～5 weight %, and solvent is to get final product about 10～50 weight %.In addition, can contain the additive that is selected from various dispersion agents, softening agent, dielectric medium, the isolator etc. as required in each thickener.Their total content is preferably below 10 weight %.
When using print process, with dielectric layer with thickener and interior electrode layer with the thickener superimposition printing on substrates such as PET, cut into the regulation shape after, by strippable substrate, make living chip.
In addition, when using slice method, form raw cook with thickener with dielectric layer, print thereon interior electrode layer with thickener after, their laminations are made living multilayer body, cut into the size of regulation, make living chip.
Before sintering, implement the processing of unsticking mixture to giving birth to chip.As the condition that the unsticking mixture is handled, heat-up rate is preferably 5～300 ℃/hour, more preferably 10～100 ℃/hour, keep temperature to be preferably 180～400 ℃, more preferably 200～300 ℃, temperature hold-time is preferably 0.5～24 hour, more preferably 5～20 hours.In addition, unsticking mixture atmosphere is preferably in the air.
Then, the living chip of having implemented the processing of unsticking mixture is carried out sintering.Atmosphere when sintering is given birth to chip can determine suitably that with the kind of the electro-conductive material in the thickener when using base metals such as Ni, Ni alloy as electro-conductive material, the oxygen partial pressure in the sintering atmosphere is preferably 10 according to interior electrode layer -14～10 -9Air pressure.If oxygen partial pressure is less than above-mentioned scope, then unusual sintering takes place in the electro-conductive material of interior electrode layer, and is interrupted sometimes.In addition, if oxygen partial pressure surpasses above-mentioned scope, then interior electrode layer has the tendency of oxidation.
In addition, the maintenance temperature during sintering is preferably 1000～1400 ℃, more preferably 1100～1350 ℃.If keep temperature less than above-mentioned scope, then densification is not enough, if surpass above-mentioned scope, the capacity temperature characteristic interrupted, that the diffusion of interior electrode layer constituent material causes that the electrode that the unusual sintering of interior electrode layer causes then takes place easily degenerates, the reduction of dielectric ceramic composition.
As sintering condition in addition, heat-up rate is preferably 100～900 ℃/hour, more preferably 200～900 ℃/hour, temperature hold-time is preferably 0.5～8 hour, more preferably 1～3 hour, speed of cooling was preferably 50～500 ℃/hour, more preferably 200～300 ℃/hour.In addition, sintering atmosphere is preferably reducing atmosphere, and as atmosphere gas, preference is as with N 2And H 2The mixed gas humidification use.
When in reducing atmosphere, carrying out sintering, preferably the capacitor element body is implemented annealing.Be annealed into the processing that dielectric layer is reoxidized, but significant prolongation IR life-span thus, so reliability improves.
Oxygen partial pressure in the annealing atmosphere is preferably 10 -8More than the air pressure, be preferably 10 especially -7～10 -4Air pressure.If oxygen partial pressure is less than above-mentioned scope, then dielectric layer reoxidize difficulty, if surpass above-mentioned scope, then interior electrode layer has the tendency of oxidation.
Maintenance temperature during annealing is preferably below 1200 ℃, is preferably 500～1200 ℃ especially.If keep temperature less than above-mentioned scope, then because reoxidizing of dielectric layer is insufficient, so IR is low, and the IR accelerated aging shortens easily.And if keep temperature to surpass above-mentioned scope, then interior electrode layer oxidation, not only capacity is low, and interior electrode layer and dielectric base body reaction, and the reduction of the degenerating of capacity temperature characteristic, IR reduction, IR accelerated aging takes place easily.
As annealing conditions in addition, heat-up rate is preferably 100～900 ℃/hour, more preferably 200～900 ℃/hour, temperature hold-time is preferably 0.5～12 hour, more preferably 1～10 hour, speed of cooling was preferably 50～600 ℃/hour, more preferably 100～300 ℃/hour.As the annealed atmosphere gas, for example preferably use the N of humidification 2Gas etc.
In the processing of above-mentioned unsticking mixture, sintering and annealing, humidification N 2Can use for example humidifier etc. when gas, mixed gas etc.At this moment, water temperature is preferably about 5～75 ℃.The processing of unsticking mixture, sintering and annealing can be carried out continuously, also can independently carry out.
The capacitor element body that as above obtains is implemented the end face polishing by for example tumbling polishing, sandblast etc., and printing or coating outer electrode thickener carry out sintering, form outer electrode 4.Outer electrode for example is preferably with the sintering condition of thickener: at the N of humidification 2And H 2Mixed gas in carry out about 10 minutes～1 hour at 600～800 ℃.In addition, as required, externally electrode 4 surfaces are by formation coatings such as platings.
For specifying except following operation of the manufacture method of the dielectric ceramic composition of second aspect, with the description standard of the manufacture method of the dielectric ceramic composition of first aspect.
In the manufacture method of the dielectric ceramic composition of second aspect, at first, the modulation electric medium layer is with the contained dielectric ceramic composition powder of thickener.
In second aspect, the modulation of above-mentioned dielectric ceramic composition powder is following to be carried out.At first, with above-mentioned principal constituent raw material and above-mentioned 4a minor component part of raw materials and/or above-mentioned 4b minor component part of raw materials (being equivalent to the 4a minor component that will contain in the dielectric ceramic composition and the raw material of the part in the 4b minor component) reaction in advance, preferably carry out solid solution, the raw material that obtains reacting (the preceding interpolation operation of minor component).Then, in the raw material that this reacted, add remaining 4a minor component raw material and 4b minor component raw material (will constitute the 4a minor component of dielectric ceramic composition and remaining raw material in the 4b minor component) and above-mentioned the the 1st～the 3rd, the 5th minor component raw material (the back interpolation operation of minor component).Then, carry out pre-burning as required, thus modulation electric dielectric ceramic composition powder.
Principal constituent raw material about using in above-mentioned operation is as the criterion with first aspect.The minor component raw material of reaction in advance as using in above-mentioned operation can use the oxide compound of above-mentioned R1 or R2 or will become all cpds of the oxide compound of R1 or R2 by sintering.For example, the part of the oxide compound of R1 is reacted in advance, the part of the oxide compound of R2 is reacted in advance, in addition, the part of the oxide compound of the part of oxide compound of R1 and R2 is reacted in advance.As the oxide compound of R1 or R2, will become the compound of the oxide compound of R1 or R2 by sintering, can use median size is dusty raw materials about 0.01～0.1 μ m or the above-mentioned molten gelationus raw material in the first aspect etc.
With respect to 100 moles of above-mentioned principal constituents, 4a minor component that reacts in advance with the 1st principal constituent raw material and/or 4b minor component raw material are in R1 and/or R2, be preferably 0～0.5 mole (wherein not comprising 0), more preferably 0～0.4 mole (wherein not comprising 0), more preferably 0～0.25 mole (wherein not comprising 0).
If the 4a minor component that reacts in advance with the 1st principal constituent raw material and/or the amount of 4b minor component raw material are too much, then the crystallization particle diameter of the sintered compact that obtains behind the sintering becomes excessive, and the temperature profile of electrostatic capacity degenerates, and IR has the tendency of reduction.
React the method for the raw material that obtains reacting in advance as making above-mentioned the 1st principal constituent raw material and above-mentioned 4a minor component part of raw materials and/or above-mentioned 4b minor component part of raw materials, same with above-mentioned first aspect, can enumerate the 1st principal constituent raw material and above-mentioned minor component raw material with mixing such as solvents, make solvent evaporation, carry out the method for pre-burning or in mixing solutions, add precipitation agent etc., above-mentioned minor component is separated out on principal constituent, carry out the method for pre-burning etc.Temperature during pre-burning is preferably about 500～700 ℃.
Then, in the raw material of the reaction that obtains, add remaining 4a minor component and 4b minor component raw material (will constitute the 4a minor component of dielectric ceramic composition and remaining raw material in the 4b minor component) and above-mentioned the the 1st～the 3rd, the 5th minor component raw material, mix also then and carry out pre-burning as required, obtain the dielectric ceramic composition powder.Remaining 4a minor component and 4b minor component raw material, the the 1st～the 3rd, the 5th minor component raw material can use above-mentioned oxide compound or its mixture, composite oxides, will become all cpds of above-mentioned oxide compound, composite oxides by sintering.
Later operation is as the criterion with the explanation about the manufacture method of the dielectric ceramic composition of first aspect.
So to be installed in printed base plate by soldering etc. first-class for the multi-layer ceramic capacitor of making of the present invention, is used for various electronic machines etc.
More than embodiments of the present invention are illustrated, but the present invention is not subjected to any qualification of above-mentioned embodiment, can make various changes in the scope that does not break away from main idea of the present invention.
For example, in the above-described embodiment, as electronic unit illustration of the present invention multi-layer ceramic capacitor, but as electronic unit of the present invention, be not limited to multi-layer ceramic capacitor, as long as have the dielectric layer that constitutes by the above-mentioned dielectric ceramic composition of forming.
Embodiment
Below, further specify the present invention by detailed embodiment, but the invention is not restricted to these embodiment.
Embodiment 1
At first, as the principal constituent raw material, preparing median size is the BaTiO of 0.35 μ m 3Powder divides the 1st principal constituent raw material and the 2nd principal constituent raw material, makes the 1st principal constituent be the value shown in the table 1 with respect to the ratio n1/ (n1+n2) of the total mole number of the 1st principal constituent and the 2nd principal constituent.Then, as the 4th minor component raw material (preceding interpolation raw material) that reacts in advance, prepare Y 2O 3Powder, according to the amount weighing shown in the table 1 in advance with the Y of the 1st principal constituent reaction 2O 3The amount of powder.Then, with above-mentioned the 1st principal constituent raw material (BaTiO 3Powder) and Y 2O 3Powder carries out wet mixing by ball mill to be pulverized, and makes slurry, behind this slurry drying, carries out pre-burning, pulverizing, the raw material that obtains reacting.The pre-burning condition is: heat-up rate: 200 ℃/hour, keep temperature: 500 ℃, and temperature hold-time: 2 hours, atmosphere: in the air.That is, as the principal constituent raw material, only use BaTiO in the sample 1 3Powder, in addition, with respect to 100 moles of principal constituents, Fan Ying Y in advance 2O 3Amount in Y atom (following identical in the sample of present specification) be 0.05 mole (with Y 2O 3Count 0.025 mole).
Then, as the 4th minor component raw material that in the raw material of the reaction that obtains, adds (raw material is added in the back), use Y 2O 3, with respect to 100 moles of principal constituents, Y 2O 3Addition count the amount shown in the table 1 with the Y atom.Promptly in sample 1, count 0.35 mole (with Y with the Y atom 2O 3The addition of meter is 0.175 mole).In addition, the the 1st～the 3rd, the 5th minor component raw material that adds in the raw material of the reaction that obtains and the addition of each minor component are as follows.That is, MgO (the 1st minor component) is 1.2 moles, (Ba, Ca) SiO 3(the 2nd minor component) is 0.75 mole, V 2O 5(the 3rd minor component) is 0.03 mole, and MnO (the 5th minor component) is 0.1 mole.Added the 2nd principal constituent raw material (BaTiO 3Powder) and the raw material of the reaction of above-mentioned minor component raw material carry out wet mixing by ball mill and pulverize, make slurry, behind this slurry drying, by pre-burning, pulverize and obtain the dielectric ceramic composition powder.With respect to 100 moles of principal constituents, the addition of each minor component is addition (wherein, the Y in each oxide compound 2O 3Be addition) in the Y atom.
In embodiment 1, Fan Ying (preceding interpolation) Y in advance 2O 3Amount and add (afterwards interpolation) Y in the raw material that react to 2O 3The Y of the total amount of amount for containing in the dielectric ceramic composition that finally obtains 2O 3Amount.
Above-mentioned dielectric ceramic composition powder 100 weight parts that obtain, acrylic resin 4.8 weight parts, ethyl acetate 100 weight parts, mineral turpentine 6 weight parts, toluene 4 weight parts are mixed with ball mill, make thickener, obtain the dielectric layer thickener.
Then, Ni particle 44.6 weight parts, terpinol 52 weight parts, ethyl cellulose 3 weight parts and benzotriazole 0.4 weight part are mediated with triple-roller mill, made slurry, obtain the interior electrode layer thickener.
Use these thickeners, the multi-layer ceramic capacitor 1 that following manufacturing is shown in Figure 1.
At first, on the PET film, form raw cook with thickener with the dielectric layer that obtains.After printing paste for internal electrode thereon, sheet is peeled off from the PET film.Then, these raw cooks and protection with raw cook (do not print interior electrode layer with thickener) lamination, crimping, are obtained the life multilayer body.Then, cut into the size of regulation, make living chip, carry out the processing of unsticking mixture, sintering and annealing under the following conditions, obtain the multi-layered ceramic sintered compact giving birth to multilayer body.
Unsticking mixture treatment condition: heat-up rate: 32.5 ℃/hour, keep temperature: 260 ℃, temperature hold-time: 8 hours, atmosphere: in the air.
Sintering condition: heat-up rate: 200 ℃/hour, keep temperature: 1260～1280 ℃, temperature hold-time: 2 hours, speed of cooling: 200 ℃/hour, atmosphere gas: the N of humidification 2+ H 2Mixed gas (oxygen partial pressure: 10 -12Air pressure).
Annealing conditions: heat-up rate: 200 ℃/hour, keep temperature: 1050 ℃, temperature hold-time: 2 hours, speed of cooling: 200 ℃/hour, atmosphere: the N of humidification 2Gas (oxygen partial pressure: 10 -5Air pressure).
The humidification use water temperature of atmosphere gas is 20 ℃ a humidifier when sintering and annealing.
Then, after the end face of the multi-layered ceramic sintered compact that obtains polished by sandblast, coating In-Ga alloy obtained the multi-layer ceramic capacitor sample of embodiment shown in Figure 11 as outer electrode.
The electrical condenser sample that obtains is of a size of 3.2mm * 1.6mm * 0.6mm, and the folded dielectric medium number of plies of interior electrode layer is 4, and every layer of dielectric layer thickness (layer thickness) is 3.5 μ m, and the thickness of interior electrode layer is 1.2 μ m.Then, according to method shown below, average crystallite particle diameter, relative permittivity ε, dielectric loss tan δ, insulation resistance IR, the CR that estimates the insulating particles of the electrical condenser sample that obtains amasss, the temperature profile and the IR accelerated aging of electrostatic capacity.In addition, to making the 1st principal constituent (BaTiO 3) and Y 2O 3The raw material of the above-mentioned reaction that reaction obtains carries out the result that XPS measures, and each element that can confirm Ba, Ti, Y is at the inner uniform distribution of particle.
The average crystallite particle diameter of insulating particles
As the measuring method of the average crystallite particle diameter of insulating particles, at first, with the electrical condenser sample that obtains along and vertical cut-out of internal electrode, polish this cut surface.Then, this polished surface is implemented chemical milling or thermal etching, then, (SEM) observes with scanning electron microscope, by コ one De method the shape of insulating particles is assumed to ball and calculates.The result is as shown in table 1.
Relative permittivity ε
Under 20 ℃ of reference temperatures, at digital LCR meter (Yokogawa Motor (strain) system YHP4274A), frequency 120Hz, input signal level (mensuration voltage) be the electrostatic capacity C of mensuration electrical condenser sample under the condition of 0.5Vrms/ μ m.Dielectric thickness and the overlapping area between the internal electrode by the electrostatic capacity that obtains, multi-layer ceramic capacitor are calculated relative permittivity (no unit).Relative permittivity is high more preferred more.The result is as shown in table 1.
Dielectric loss tan δ
Under 20 ℃ of reference temperatures, at digital LCR meter (Yokogawa Motor (strain) system YHP4274A), frequency is 120Hz, and input signal level (mensuration voltage) be the dielectric loss tan δ of mensuration electrical condenser sample under the condition of 0.5Vrms/ μ m.Dielectric loss is more little preferred more.The result is as shown in table 1.
Insulation resistance IR
20 ℃ the electrical condenser sample is applied the volts DS of 1 minute 4V/ μ m after, measure the insulation resistance IR of electrical condenser sample with insulating-resistance meter (ア De バ Application テ ス ト society system R8340A).Insulation resistance IR is the bigger the better.The result is as shown in table 1.
CR is long-pending
CR amasss by electrostatic capacity C (the μ F of unit) that obtains said determination and long-pending the obtaining of insulation resistance IR (the M Ω of unit).CR is long-pending to be the bigger the better.The result is as shown in table 1.
The temperature profile of electrostatic capacity
Measure the electrical condenser sample-55 ℃～125 ℃ electrostatic capacity, the velocity of variation Δ C that calculates electrostatic capacity estimates the X7R characteristic that whether satisfies the EIA standard.That is, estimate at-55 ℃～125 ℃ velocity of variation Δ C whether in ± 15%.The result is as shown in table 1.In the table 1, the sample that satisfies the X7R characteristic is " poor " for " good " ungratified sample.
The IR accelerated aging
180 ℃, in the electric field of 12V/ μ m, the electrical condenser sample is carried out accelerated test, calculate insulation resistance IR and reach 10 8Following time of Ω (unit be hour).The longer the better for the IR accelerated aging.The result is as shown in table 1.
Table 1
Specimen coding The ratio of the 1st principal constituent The 1st principal constituent middle-weight rare earths amount of element Minor component Sintered compact crystallization particle diameter [μ m] Relative permittivity ε tanδ [％] IR [Ω·m] CR amasss [μ FM Ω] The X7R characteristic The IR life-span [h]
Add the back
n1/(n1+n2) The 4th The 4th
Y [mol] Y [mol]
Sample 2 0 - 0.35 0.31 3390 4.6 1.6E+11 4800 Good 3.5
Sample 3 0.25 0.05 0.35 0.30 3480 4.6 1.4E+11 4310 Good 3.3
Sample 4 0.40 0.05 0.35 0.30 3750 5.2 1.4E+11 4650 Good 3.8
Sample 1 0.50 0.05 0.35 0.29 4000 5.6 1.4E+11 4960 Good 5.2
Sample 5 0.75 0.05 0.35 0.29 4500 7.2 1.5E+11 5980 Good 6.4
Sample 6 0.90 0.05 0.35 0.28 4640 8.4 1.3E+11 5340 Good 6.9
Sample 7 1 0.05 0.35 0.28 4720 8.7 1.3E+11 5430 Good 7.5
With respect to principal constituent 100mol
The 1st minor component: MgO 1.2mol
The 2nd minor component: (Ba, Ca) SiO 30.75mol
The 3rd minor component: V 2O 50.03mol
The 5th minor component: MnO 0.1mol
The median size of principal constituent raw material: 0.35 μ m
The thickness that dielectric layer is every layer (layer thickness)=3.5 μ m
In the table, " aE+b " expression " a * 10 + b".
Estimate 1
As shown in Table 1, make the 1st principal constituent with respect to the ratio n1/ (n1+n2) of the 1st principal constituent and the 2nd principal constituent total mole number at the sample more than 0.5 1,5～7, relative permittivity is more than 4000, the IR life-span is also good.
On the other hand as can be known, the 1st principal constituent raw material not with Y 2O 3The value of sample 2 that powder reacts in advance and n1/ (n1+n2) is less than in 0.5 the sample 3,4, and relative permittivity is quite low, and the IR life-span also degenerates.
By The above results as can be known, the value of n1/ (n1+n2) is more than 0.5, by making the 1st principal constituent raw material and the 4th minor component (Y 2O 3) part of raw materials reacts in advance, can keep other electrical characteristic (dielectric loss tan δ, insulation resistance IR, CR long-pending) good, can realize high relative dielectric constant and good IR life-span simultaneously.
Embodiment 2
The Y that reacts in advance with the 1st principal constituent raw material 2O 3The amount of (4a minor component) and the raw material Y that in the raw material that reacted, adds 2O 3The amount of (4a minor component) is counted as shown in table 2 with the Y atom, in addition, obtain each electrical condenser sample equally with sample 1.Each the electrical condenser sample that obtains is carried out similarly to Example 1 evaluation.The result is as shown in table 2.
Table 2
Specimen coding The ratio of the 1st principal constituent The 1st principal constituent middle-weight rare earths amount of element Minor component Sintered compact crystallization particle diameter [μ m] Relative permittivity ε tanδ [％] IR [Ω·m] CR amasss [μ FM Ω] The X7R characteristic The IR life-span [h]
Add the back
n1/(n1+n2) The 4th The 4th
Y [mol] Y [mol]
Sample 11 0 - 0.3 0.32 3220 4.3 1.5E+11 4280 Good 3.5
Sample 12 0.25 0.1 0.3 0.32 3540 4.9 1.4E+11 4390 Good 4.1
Sample 13 0.40 0.1 0.3 0.31 3880 5.8 1.4E+11 4810 Good 46
Sample 14 0.50 0.1 0.3 0.30 4100 6.4 1.4E+11 5080 Good 6.4
Sample 15 0.75 0.1 0.3 0.31 4500 8.4 1.6E+11 6370 Good 6.7
Sample 16 0.90 0.1 0.3 0.31 4840 9.3 1.9E+11 8140 Good 6.9
Sample 17 1 0.1 0.3 0.30 5070 9.6 1.0E+11 4490 Good 7.7
With respect to principal constituent 100mol
The 1st minor component: MgO 1.2mol
The 2nd minor component: (Ba, Ca) SiO 30.75mol
The 3rd minor component: V 2O 50.03mol
The 5th minor component: MnO 0.1mol
The median size of principal constituent raw material: 0.35 μ m
The thickness that dielectric layer is every layer (layer thickness)=3.5 μ m
In the table, " aE+b " expression " a * 10 + b".
Estimate 2
As shown in Table 2, even change the Y that reacts in advance with the 1st principal constituent raw material 2O 3The amount of (4a minor component) and the Y that in the raw material that reacted, adds 2O 3During the amount of (4a minor component), also can obtain result similarly to Example 1.
Embodiment 3
Raw material as reaction in advance uses Tb 2O 3(4b minor component) replaces Y 2O 3(4a minor component).In addition, make the Tb that reacts in advance with the 1st principal constituent raw material 2O 3The amount of (4b minor component) and make the Y that in the raw material that reacted, adds 2O 3The amount of (4a minor component) is counted with Y atom and Tb atom beyond the amount as shown in table 3, similarly to Example 1, obtains each electrical condenser sample.Each the electrical condenser sample that obtains is carried out similarly to Example 1 evaluation.The result is as shown in table 3.
In embodiment 3, the ratio M2/M1 of the mole number M1 of the 4a minor component R1 in the dielectric ceramic composition that finally obtains and the mole number M2 of 4b minor component R2 is 0.14.
Table 3
Specimen coding The ratio of the 1st principal constituent The 1st principal constituent middle-weight rare earths amount of element Minor component Sintered compact crystallization particle diameter [μ m] Relative permittivity ε tanδ [％] IR [Ω·m] CR amasss [μ FM Ω] The X7R characteristic The IR life-span [h]
Add the back The mol ratio of R1 and R2
n1/(n1+n2) 4b 4a (R1) 4b (R2)
Tb [mol] Y [mol] R2 [mol] M1/M2
Sample 21 0 - 0.35 0 0 0.30 3390 4.3 1.2E+11 3600 Good 2.9
Sample 22 0.25 0.05 0.35 0 0.14 0.29 3650 4.4 1.2E+11 3810 Good 2.5
Sample 23 0.40 0.05 0.35 0 0.14 0.29 3810 4.9 1.3E+11 4390 Good 3.1
Sample 24 0.50 0.05 0.35 0 0.14 0.28 3950 5.1 1.4E+11 4900 Good 4.5
Sample 25 0.75 0.05 0.35 0 0.14 0.29 4070 6.9 1.4E+11 5050 Good 4.6
Sample 26 0.90 0.05 0.35 0 0.14 0.30 4230 8.5 1.3E+11 4870 Good 6.7
Sample 27 1 0.05 0.35 0 0.14 0.31 4950 8.8 1.1E+11 4860 Good 7.9
With respect to principal constituent 100mol
The 1st minor component: MgO 1.2mol
The 2nd minor component: (Ba, Ca) SiO 30.75mol
The 3rd minor component: V 2O 50.03mol
The 5th minor component: MnO 0.1mol
The median size of principal constituent raw material: 0.35 μ m
The thickness that dielectric layer is every layer (layer thickness)=3.5 μ m
In the table, " aE+b " expression " a * 10 + b".
Estimate 3
As shown in Table 3, as the raw material that reacts in advance with the 1st principal constituent raw material, even use Tb 2O 3(4b minor component) replaces Y 2O 3When (4a minor component), also can obtain result similarly to Example 1.
Embodiment 4
As the principal constituent raw material, preparing median size is the BaTiO of 0.30 μ m 3Powder makes that the 1st principal constituent is 1 with respect to the value of the ratio n1/ (n1+n2) of the total mole number of the 1st principal constituent and the 2nd principal constituent, as the raw material that reacts in advance, uses Y 2O 3(4a minor component).That is, make whole principal constituent raw materials and Y 2O 3(4a minor component) reaction.As the raw material that in the raw material that reacted, adds, use Y 2O 3(4a minor component) and Gd 2O 3(4b minor component).The amount of the amount of Fan Ying raw material and the raw material that adds in the raw material that reacted is counted the amount shown in the table 4 with R1 and R2 in advance.And then the the 1st～the 3rd, the 5th minor component raw material that adds in the raw material of the reaction that obtains and the addition of each minor component are as follows.That is, MgO (the 1st minor component) is 0.75 mole, (Ba, Ca) SiO 3(the 2nd minor component) is 0.875 mole, V 2O 5(the 3rd minor component) is 0.074 mole, and MnO (the 5th minor component) is 0.1 mole.Except above-mentioned, obtain each electrical condenser sample similarly to Example 1.Each the electrical condenser sample that obtains is carried out similarly to Example 1 evaluation.The result is as shown in table 4.
In table 5, the ratio M2/M1 of the mole number M1 of the 4a minor component R1 in the dielectric ceramic composition that finally obtains and the mole number M2 of 4b minor component R2 is 0.08～0.42 scope.
Table 4
Specimen coding The ratio of the 1st principal constituent The 1st principal constituent middle-weight rare earths amount of element Minor component Sintered compact crystallization particle diameter [μ m] Relative permittivity ε tanδ [％] IR [Ω·m] CR amasss [μ FM Ω] The X7R characteristic The IR life-span [h]
Add the back The mol ratio of R1 and R2
n1/(n1+n2) 4a 4a (R1) 4b (R2)
Y [mol] Y [mol] Gd [mol] M2/M1
Sample 31 1 0.05 0.55 0 0 0.35 3350 6.5 6.2E+10 1840 Good 52
Sample 32 1 0.05 0.55 0.035 0.06 0.34 3490 6.6 6.3E+10 1950 Good 85
Sample 33 1 0.05 0.55 0.07 0.12 0.35 3600 6.9 6.3E+10 2000 Good 110
Sample 34 1 0.05 0.55 0.14 0.23 0.33 3560 7.0 6.4E+10 2020 Good 129
Sample 35 1 0.05 0.55 0.21 0.35 0.32 3370 6.2 6.1E+10 1820 Good 74
Sample 36 1 0.05 0.62 0 0 0.35 3200 5.5 5.2E+10 1470 Good 77
Sample 37 1 0 0.74 0 0 0.37 2400 3.5 5.4E+10 1150 Difference 71
With respect to Wang Chengfen 100mol
The 1st minor component: MgO 0.75mol
The 2nd minor component: (Ba, Ca) SiO 30.875mol
The 3rd minor component: V 2O 50.074mol
The 5th minor component: MnO 0.1mol
The median size of principal constituent raw material: 0.30 μ m
The thickness that dielectric layer is every layer (layer thickness)=3.5 μ m
In the table, " aE+b " expression " a * 10 + b".
Estimate 4
As shown in Table 4, when making the raw material reaction of whole principal constituent raw materials and reaction in advance, increase the Gd that in the raw material that reacted, adds 2O 3The amount of (4b minor component), the ratio M2/M1 of mole number M1 by making R1 and the mole number M2 of R2 can make the IR life-span good in the scope of the invention.
Embodiment 5
As the principal constituent raw material, preparing median size is the BaTiO of 0.30 μ m 3Powder in sample 41～46, makes that the 1st principal constituent is 0.25 with respect to the ratio n1/ (n1+n2) of the total mole number of the 1st principal constituent and the 2nd principal constituent, and in sample 47～52, making n1/ (n1+n2) is 0.75, and in sample 53～58, making n1/ (n1+n2) is 1.As in advance with the raw material of the 1st principal constituent raw material reaction, use Y 2O 3(4a minor component).As the raw material that in the raw material that reacted, adds, use Y 2O 3(4a minor component) and Gd 2O 3(4b minor component).Fan Ying Y in advance 2O 3The amount of (4a minor component) and the Y that in the raw material that reacted, adds 2O 3(4a minor component) and Gd 2O 3The amount of (4b minor component) is counted the amount shown in the table 5 with R1 and R2.And then the the 1st～the 3rd, the 5th minor component raw material that adds in the raw material of the reaction that obtains and the addition of each minor component are as follows.That is, MgO (the 1st minor component) is 1.00 moles, (Ba, Ca) SiO 3(the 2nd minor component) is 0.875 mole, V 2O 5(the 3rd minor component) is 0.044 mole, and MnO (the 5th minor component) is 0.1 mole.Except above-mentioned, obtain each electrical condenser sample similarly to Example 1.Each the electrical condenser sample that obtains is carried out similarly to Example 1 evaluation.
In table 5, the ratio M2/M1 of the mole number M1 of the 4a minor component R1 in the dielectric ceramic composition that finally obtains and the mole number M2 of 4b minor component R2 is 0.1 scope.The result is as shown in table 5.
Table 5
Specimen coding The ratio of the 1st principal constituent The 1st principal constituent middle-weight rare earths amount of element Minor component Sintered compact crystallization particle diameter [μ m] Relative permittivity ε tanδ [％] IR [Ω·m] CR amasss [μ FM Ω] The X7R characteristic The IR life-span [h]
Add the back The mol ratio of R1 and R2
n1/(n1+n2) 4a 4a (R1) 4b (R2)
Y [mol] Y [mol] Gd [mol] M2/M1
Sample 41 0.25 0.02 0.58 0.06 0.1 0.33 2440 4.5 2.1E+11 4540 Difference 9
Sample 42 0.25 0.05 0.55 0.06 0.1 0.31 3020 4.9 1.9E+11 5080 Difference 14
Sample 43 0.25 0.10 0.50 0.06 0.1 0.32 2990 4.9 1.9E+11 5030 Difference 22
Sample 44 0.25 0.25 0.35 0.06 0.1 0.32 3180 5.1 1.5E+11 4220 Difference 10
Sample 45 0.25 0.50 0.10 0.06 0.1 0.33 2540 7.2 1.4E+11 3150 Difference 6
Sample 46 0.25 0.60 0 0.06 0.1 0.43 2650 9.5 1.5E+10 350 Difference 2
Sample 47 0.75 0.02 0.58 0.06 0.1 0.35 3020 5.7 1.6E+11 4280 Good 11
Sample 48 0.75 0.05 0.55 0.06 0.1 0.34 3850 7.6 1.5E+11 5110 Good 17
Sample 49 0.75 0.10 0.50 0.06 0.1 0.34 3820 8.5 1.5E+11 5060 Good 15
Sample 50 0.75 0.25 0.35 0.06 0.1 0.33 3890 8.7 1.4E+11 4820 Good 25
Sample 51 0.75 0.50 0.10 0.06 0.1 0.35 3740 9.8 1.1E+11 3640 Difference 18
Sample 52 0.75 0.60 0 0.06 0.1 0.46 4470 13.3 1.6E+10 633 Difference 4
Sample 53 1 0.02 0.58 0.06 0.1 0.37 3400 7.3 1.2E+11 3610 Good 12
Sample 54 1 0.05 0.55 0.06 0.1 0.35 4100 9.6 1.3E+11 4790 Good 17
Sample 55 1 0.10 0.50 0.06 0.1 0.35 4300 9.7 1.5E+11 5710 Good 25
Sample 56 1 0.25 0.35 0.06 0.1 0.34 4320 10.0 1.4E+11 5350 Good 20
Sample 57 1 0.50 0.10 0.06 0.1 0.37 3630 11.5 8.5E+10 2730 Difference 16
Sample 58 1 0.60 0 0.06 0.1 0.48 5200 15.2 8.8E+09 405 Difference 6
The 1st minor component: MgO 1.00mol
The 2nd minor component: (Ba, ca) SiO 30.875mol
The 3rd minor component: V 2O 50.044mol
The 5th minor component: MnO 0.1mol
The median size of principal constituent raw material: 0.30 μ m
The thickness that dielectric layer is every layer (layer thickness)=3.5 μ m
In the table, " aE+b " expression " a * 10 + b".
Estimate 5
As shown in Table 5, n1/ (n1+n2) is 0.75 and 1 o'clock, can take into account characteristics such as relative permittivity, dielectric loss, IR, CR are long-pending, the temperature profile of electrostatic capacity, IR life-span.Raw material (the Y that reacts in advance with the 1st principal constituent raw material 2O 3) amount when preferred range of the present invention (greater than 0 mole less than 0.5 mole), though relative permittivity than higher, dielectric loss, CR are long-pending, there is the tendency that degenerates in the IR life-span.Therefore as can be known, the raw material (Y that reacts in advance with the 1st principal constituent raw material 2O 3) amount preferably in preferred range of the present invention.
On the other hand as can be known, the value of n1/ (n1+n2) is 0.25 o'clock, and the temperature profile of relative permittivity, electrostatic capacity, IR life-span etc. degenerates.
By The above results as can be known, when the value of n1/ (n1+n2) is outside the scope of the invention, even the value of the ratio M2/M1 of the mole number M2 of the mole number M1 of the addition of Fan Ying raw material, R1 and R2 can not realize good characteristic in the scope of the invention in advance.
Embodiment 6
Raw material as reaction in advance uses Yb 2O 3(4a minor component) replaces Y 2O 3(4a minor component), its addition are counted with the Yb atom beyond the amount as shown in table 6, similarly to Example 5, obtain each electrical condenser sample.Each the electrical condenser sample that obtains is carried out similarly to Example 1 evaluation.The result is as shown in table 6.
Table 6
Specimen coding The ratio of the 1st principal constituent The 1st principal constituent middle-weight rare earths amount of element Minor component Sintered compact crystallization particle diameter [μ m] Relative permittivity ε tanδ [％] IR [Ω·m] CR amasss [μ FM Ω] The X7R characteristic The IR life-span [h]
Add the back The mol ratio of R1 and R2
n1/(n1+n2) 4a 4a (R1) 4b (R2)
Yb [mol] Y [mol] Gd [mol] M2/M1
Sample 61 0.25 0.02 0.58 0.06 0.1 0.35 2670 3.9 2.0E+11 4730 Difference 4
Sample 62 0.25 0.05 0.55 0.06 0.1 0.32 3780 5.0 2.0E+11 6700 Difference 8
Sample 63 0.25 0.10 0.50 0.06 0.1 0.31 3590 6.1 1.8E+11 5720 Difference 6
Sample 64 0.25 0.25 0.35 0.06 0.1 0.33 2900 6.3 1.5E+11 3850 Difference 13
Sample 65 0.25 0.50 0.10 0.06 0.1 0.36 3310 10.1 1.1E+11 3220 Difference 5
Sample 66 0.25 0.60 0 0.06 0.1 0.42 4350 10.9 1.0E+10 3850 Difference 4
Sample 67 0.75 0.02 0.58 0.06 0.1 0.37 3360 5.8 1.4E+11 4160 Good 5
Sample 68 0.75 0.05 0.55 0.06 0.1 0.35 4060 7.9 1.3E+11 4670 Good 12
Sample 69 0.75 0.10 0.50 0.06 0.1 0.34 4160 8.8 12E+11 4420 Good 15
Sample 70 0.75 0.25 0.35 0.06 0.1 0.34 3670 9.5 1.2E+11 3900 Good 18
Sample 71 0.75 0.50 0.10 0.06 0.1 0.35 3730 10.0 9.0E+10 2970 Good 12
Sample 72 0.75 0.60 0 0.06 0.1 0.46 4720 14.1 1.1E+10 4600 Good 4
Sample 73 1 0.02 0.58 0.06 0.1 0.38 3620 7.3 1.2E+11 3850 Good 7
Sample 74 1 0.05 0.55 0.06 0.1 0.36 4350 9.6 1.3E 10 5000 Good 14
Sample 75 1 0.10 0.50 0.06 0.1 0.35 4210 9.7 1.5E+11 5590 Good 14
Sample 76 1 0.25 0.35 0.06 0.1 0.35 4070 10.0 1.4E+11 5050 Good 21
Sample 77 1 0.50 0.10 0.06 0.1 0.35 3760 11.5 8.5E+10 2830 Difference 10
Sample 78 1 0.60 0 0.06 0.1 0.52 4820 16.2 7.9E+09 340 Difference 3
With respect to principal constituent 100mol
The 1st minor component: MgO 1.00mol
The 2nd minor component: (Ba, ca) SiO 30.875mol
The 3rd minor component: V 2O 50.044mol
The 5th minor component: MnO 0.1mol
The median size of principal constituent raw material: 0.30 μ m
The thickness that dielectric layer is every layer (layer thickness)=3.5 μ m
In the table, " aE+b " expression " a * 10 + b".
Estimate 6
As shown in Table 6, even use Yb as the raw material that reacts in advance 2O 3The time, also can obtain result similarly to Example 5.

Claims (18)

1. the manufacture method of dielectric ceramic composition, it is a method of making the dielectric ceramic composition that contains following compositions, described composition contains:
Contain and have general formula ABO 3The principal constituent of the compound of shown perovskite typed crystalline texture, wherein, A be Ba separately or Ba and Ca compound, B be Ti separately or Ti and Zr compound; With
The 4th minor component that contains the oxide compound of R, wherein, R is be selected from Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu at least a,
It is characterized in that this method comprises following operation:
The operation that above-mentioned principal constituent raw material is divided into 2 groups of the 1st principal constituent raw material and the 2nd principal constituent raw materials;
Above-mentioned the 4th minor component part of raw materials that makes above-mentioned the 1st principal constituent raw material and will be included in the above-mentioned dielectric ceramic composition is reacted the operation of the raw material that obtains reacting in advance; With
In the raw material of above-mentioned reaction, add above-mentioned the 2nd principal constituent raw material and will be included in the operation of remaining above-mentioned the 4th minor component raw material in the above-mentioned dielectric ceramic composition,
The mole number of above-mentioned the 1st principal constituent is the mole number of n1, above-mentioned the 2nd principal constituent when being n2, and above-mentioned the 1st principal constituent is 0.5≤n1/ (n1+n2)≤1 with respect to the ratio of the total mole number of above-mentioned the 1st principal constituent and above-mentioned the 2nd principal constituent.
2. the manufacture method of the described dielectric ceramic composition of claim 1, wherein, the operation of the above-mentioned raw material that obtains reacting is to make above-mentioned the 1st principal constituent raw material and above-mentioned the 4th minor component part of raw materials solid solution in advance, obtains the operation of the raw material of above-mentioned reaction.
3. the manufacture method of claim 1 or 2 described dielectric ceramic compositions, wherein, in the above-mentioned dielectric ceramic composition that finally obtains, with respect to 100 moles of above-mentioned principal constituents, the content of above-mentioned the 4th minor component is counted 0.1～10 mole with R.
4. the manufacture method of claim 1 or 2 described dielectric ceramic compositions wherein, with respect to 100 moles of above-mentioned principal constituents, is counted 0～0.5 mole with above-mentioned the 4th minor component that above-mentioned the 1st principal constituent raw material reacts in advance with R, wherein, does not comprise 0 and 0.5.
5. the manufacture method of claim 1 or 2 described dielectric ceramic compositions, wherein, with respect to 100 moles of % of the total amount that will finally be included in above-mentioned the 4th minor component in the above-mentioned dielectric ceramic composition, the ratio of above-mentioned the 4th minor component that reacts in advance with above-mentioned the 1st principal constituent raw material is counted 0～50 mole of % with R, wherein, do not comprise 0 and 50.
6. the manufacture method of dielectric ceramic composition, it is a method of making the dielectric ceramic composition that contains following compositions, described composition contains:
Contain and have general formula ABO 3The principal constituent of the compound of shown perovskite typed crystalline texture, wherein, A be Ba separately or Ba and Ca compound, B be Ti separately or Ti and Zr compound;
The 4a minor component that contains the oxide compound of R1, wherein, R1 be when being selected from 9 coordinations effective ionic radius less than at least a of the rare earth element of 108pm and
The 4b minor component that contains the oxide compound of R2, wherein, R2 is that the effective ionic radius when being selected from 9 coordinations is rare earth element at least a of 108pm～113pm,
It is characterized in that this method comprises following operation:
The operation that above-mentioned principal constituent raw material is divided into 2 groups of the 1st principal constituent raw material and the 2nd principal constituent raw materials;
Make above-mentioned the 1st principal constituent raw material and the above-mentioned 4a minor component part of raw materials and/or the above-mentioned 4b minor component part of raw materials that will be included in the above-mentioned dielectric ceramic composition react the operation of the raw material that obtains reacting in advance; With
In the raw material of above-mentioned reaction, add above-mentioned the 2nd principal constituent raw material, will be included in remaining the above-mentioned 4a minor component in the above-mentioned dielectric ceramic composition and the operation of above-mentioned 4b minor component raw material,
In the above-mentioned dielectric ceramic composition that finally obtains, the mole number M2 of above-mentioned 4b minor component R2 satisfies with respect to the ratio M2/M1 of the mole number M1 of above-mentioned 4a minor component R1: 0≤M2/M1≤0.25,
The mole number of above-mentioned the 1st principal constituent is the mole number of n1, above-mentioned the 2nd principal constituent when being n2, and above-mentioned the 1st principal constituent is 0.5≤n1/ (n1+n2)≤1 with respect to the ratio of the total mole number of above-mentioned the 1st principal constituent and above-mentioned the 2nd principal constituent.
7. the manufacture method of the described dielectric ceramic composition of claim 6, wherein, the operation of the above-mentioned raw material that obtains reacting is to make above-mentioned the 1st principal constituent raw material and will be included in above-mentioned 4a minor component part of raw materials and/or the solid solution in advance of above-mentioned 4b minor component part of raw materials in the above-mentioned dielectric ceramic composition, the operation of the raw material that obtains reacting.
8. the manufacture method of claim 6 or 7 described dielectric ceramic compositions, wherein, in the above-mentioned dielectric ceramic composition that finally obtains, with respect to 100 moles of above-mentioned principal constituents, the content of above-mentioned 4a minor component is counted 0～10 mole with R1, wherein, do not comprise 0
In the above-mentioned dielectric ceramic composition that finally obtains, with respect to 100 moles of above-mentioned principal constituents, the content of above-mentioned 4b minor component is counted 0～2 mole with R2, wherein, does not comprise 0.
9. the manufacture method of claim 6 or 7 described dielectric ceramic compositions, wherein, with respect to 100 moles of above-mentioned principal constituents, count 0～0.5 mole with above-mentioned 4a minor component and/or above-mentioned 4b minor component that above-mentioned the 1st principal constituent raw material reacts in advance with R1 and/or R2, wherein, do not comprise 0 and 0.5.
10. the manufacture method of claim 6 or 7 described dielectric ceramic compositions, wherein, effective ionic radius when constituting 9 coordinations of rare earth element of above-mentioned R1 is r1, when the effective ionic radius when constituting 9 coordinations of rare earth element of above-mentioned R2 is r2, select above-mentioned R1 and above-mentioned R2 to make the ratio r2/r1 of r1 and r2 satisfy the relation of 1.007＜r2/r1＜1.06.
11. the manufacture method of claim 6 or 7 described dielectric ceramic compositions, wherein, above-mentioned R1 is selected from Y, Ho, Er, Tm, Yb and Lu at least a kind.
12. the manufacture method of claim 6 or 7 described dielectric ceramic compositions, wherein, above-mentioned R2 is selected from Dy, Tb, Gd and Eu at least a kind.
13. the manufacture method of any described dielectric ceramic composition in the claim 1,2,6,7, wherein, above-mentioned principal constituent contains barium titanate.
14. the manufacture method of any described dielectric ceramic composition in the claim 1,2,6,7, wherein, above-mentioned dielectric ceramic composition also contains following compositions:
Contain at least a kind the 1st minor component being selected from MgO, CaO, BaO and SrO,
Mainly contain SiO 2, and contain and be selected from MO, Li 2O and B 2O 3At least a kind the 2nd minor component, wherein, M be selected from Mg, Ca, Ba and Sr at least a kind and
Contain and be selected from V 2O 5, MoO 3And WO 3At least a kind the 3rd minor component,
With respect to 100 moles of above-mentioned principal constituents, the ratio of each minor component is:
The 1st minor component: 0.1～5 mole,
The 2nd minor component: 0.1～12 mole,
The 3rd minor component: 0～0.3 mole, wherein, do not comprise 0.
15. the manufacture method of the described dielectric ceramic composition of claim 14, wherein, above-mentioned dielectric ceramic composition also contains the 5th minor component, and the 5th minor component contains MnO and/or Cr 2O 3,
With respect to 100 moles of above-mentioned principal constituents, the ratio of the 5th minor component is 0.05～1.0 mole.
16. the manufacture method of any described dielectric ceramic composition in the claim 1,2,6,7, wherein, as above-mentioned principal constituent raw material, using median size is the raw material of 0.05～0.5 μ m.
17. dielectric ceramic composition, it is with any dielectric ceramic composition that described method is made in the claim 1,2,6,7.
18. electronic unit, it has the dielectric layer that is made of the described dielectric ceramic composition of claim 17.
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Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3326513B2 (en) 1994-10-19 2002-09-24 ティーディーケイ株式会社 Multilayer ceramic chip capacitors
JP3344314B2 (en) * 1998-04-08 2002-11-11 株式会社村田製作所 Pulse generation capacitor
JP3091192B2 (en) * 1998-07-29 2000-09-25 ティーディーケイ株式会社 Dielectric porcelain composition and electronic component
JP3567759B2 (en) 1998-09-28 2004-09-22 株式会社村田製作所 Dielectric ceramic composition and multilayer ceramic capacitor
JP3992214B2 (en) 1999-01-28 2007-10-17 信越化学工業株式会社 Rare earth element-containing barium titanate powder and method for producing the same
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EP1669334A1 (en) 2004-12-13 2006-06-14 TDK Corporation Electronic device, dielectric ceramic composition and production method of the same
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