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CN109698179B - 半导体装置及半导体装置的制造方法 - Google Patents

半导体装置及半导体装置的制造方法 Download PDF

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Publication number
CN109698179B
CN109698179B CN201811223700.1A CN201811223700A CN109698179B CN 109698179 B CN109698179 B CN 109698179B CN 201811223700 A CN201811223700 A CN 201811223700A CN 109698179 B CN109698179 B CN 109698179B
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conductor
wiring board
metal plate
semiconductor device
electrode
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CN109698179A (zh
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日野泰成
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

目的是提供在配线连接方面具有高品质及高可靠性的半导体装置。半导体装置具备：金属板；半导体元件，包含在表面设置的第1电极和在背面设置的第2电极，第2电极与金属板1连接，使半导体元件被保持于金属板1之上；配线板，包含彼此相对的第1面及第2面，第1面以与半导体元件的第1电极相对的方式与第1电极连接；以及导体，具有板状的形状，一端配置为可与外部连接，且另一端的一个面侧固定于配线板的第2面，使导体被配线到半导体元件的第1电极。导体在另一端的一个面包含至少1个凸型台阶。导体包含的至少1个凸型台阶的顶部包含与配线板的第2面平行的接触面。通过使接触面和配线板的第2面密接，导体的另一端被固定于配线板的第2面。

Description

半导体装置及半导体装置的制造方法
技术领域
本发明涉及半导体装置及半导体装置的制造方法，特别涉及半导体装置内的具有高品质的接合性、高寿命、高可靠性的配线连接技术。
背景技术
近年来，由于环境标准的提高，考虑到环境问题的节能的半导体装置即具有高能效的半导体装置的需求不断增加。例如，对于工业设备、具备电动机的家电的驱动控制设备、面向电动汽车、混合动力汽车的车载控制设备、铁路控制设备、太阳能发电的控制设备等所使用的半导体装置，要求其可应对高功率、高耐压及高耐久。特别是对于车载控制设备、铁路控制设备所使用的半导体装置，从节能的角度、抑制电能的转换损耗的角度出发，要求在高负载环境下(高温环境下)也高效、低损耗地进行工作。例如，以往的通常的工作温度小于或等于Tj＝125、150℃，但今后要求在大于或等于Tj＝175℃、200℃的高温环境下进行工作。
因此，为了在上述这样的高温环境下，也实现由抑制通断损耗得到的低损耗化及高温状态下的高效化，需要重新设计半导体装置的构造。特别地，半导体装置内的配线连接部(接合部)最容易劣化，配线连接部的高品质、高可靠性、高寿命化的实现成为问题。另外，还需要实现使用了激光进行的配线连接的接合工序中的成本降低、生产率的提高。
专利文献1：日本特开2007-227893号公报
在配线的连接中，以往，使用的是包含Sn的焊料。但是，就在高温环境下使用的功率半导体装置的内部配线而言，包含Sn的焊料在耐久性方面存在问题。近年来，在高温环境下具有耐久性的接合材料的开发不断进行，但难以确保所期望的寿命及可靠性。
另一方面，存在通过使用了激光的接合对配线进行连接的技术。例如，在专利文献1中提出了，通过激光焊接将半导体芯片和引线框接合的半导体装置的制造方法。但是，由激光进行的接合需要在接合面实施镀Ni等外层处理，制造工序的工时增加，导致高成本化。另外，在激光接合时发生的热量有可能使半导体元件的可靠性劣化。基于这样的理由，由激光接合进行的配线的接合在技术上难以实用于要求耐久性的半导体装置。
发明内容
本发明就是为了解决上述那样的问题而提出的，其目的在于提供在配线的连接方面具有高品质及高可靠性的半导体装置。
本发明涉及的半导体装置具备：金属板；半导体元件，其包含在表面设置的第1电极和在背面设置的第2电极，第2电极与金属板连接，使半导体元件被保持于金属板之上；配线板，其包含彼此相对的第1面及第2面，第1面以与半导体元件的第1电极相对的方式与第1电极连接；以及导体，其具有板状的形状，一端配置为能够与外部连接，且另一端的一个面侧固定于配线板的第2面，使导体被配线到半导体元件的第1电极。导体在另一端的一个面包含至少1个凸型的台阶。导体包含的至少1个凸型的台阶的顶部，包含相对于配线板的第2面平行的接触面。通过使接触面和配线板的第2面密接，导体的另一端被固定于配线板的第2面。
发明的效果
根据本发明，能够提供在配线的连接方面具有高品质及高可靠性的半导体装置。
本发明的目的、特征、方案、以及优点通过以下的详细的说明和附图会更加清楚。
附图说明
图1是表示实施方式1中的半导体装置的结构的剖视图。
图2是表示实施方式1中的半导体装置的结构的俯视图。
图3是放大示出实施方式1中的第1导体的另一端的结构的剖视图。
图4是放大示出实施方式1中的第2导体的另一端的结构的剖视图。
图5是表示实施方式1中的半导体装置的制造方法的流程图。
图6是表示实施方式1中的激光接合后的半导体装置的结构的俯视图。
图7是放大示出实施方式2中的第1导体的另一端的结构的剖视图。
图8是放大示出实施方式2中的第2导体的另一端的结构的剖视图。
图9是表示实施方式3中的半导体装置的结构的剖视图。
图10是放大示出实施方式3中的第1导体的另一端的结构的剖视图。
图11是表示实施方式4中的半导体装置的结构的剖视图。
图12是表示实施方式5中的半导体装置的结构的剖视图。
图13是表示实施方式5中的半导体装置的结构的俯视图。
标号的说明
1金属板，2半导体元件，3配线板，4第1导体，4a一个面，4b另一个面，5第2导体，5a一个面，5b另一个面，8接合材料，9贯穿孔，11一个面，14连接板，21第1电极，22第2电极，31第1面，32第2面，41凸型的台阶，42接触面，43凹型的台阶，51凸型的台阶，52接触面，53凹型的台阶，80激光接合部，100半导体装置。
具体实施方式
对半导体装置及半导体装置的制造方法的实施方式进行说明。
[实施方式1]
(装置结构)
图1是表示实施方式1中的半导体装置100的结构的剖视图。图2是表示实施方式1中的半导体装置100的结构的俯视图。半导体装置100包含金属板1、半导体元件2、配线板3、导体及与该导体不同的其它导体。在下面的实施方式中，将导体称为第1导体4，将其它导体称为第2导体5。另外，在实施方式1中，半导体装置100还包含散热板6及封装材料7。
金属板1具有将由半导体元件2产生的热量散热至散热板6的功能。金属板1例如由导热率大约400W/m·k、且电阻率大约2μΩ·cm的铜或铜合金等金属构成。金属板1的厚度为3～5mm左右。
半导体元件2被保持于金属板1之上。半导体元件2是例如1个边具有7mm～15mm左右的大小，对大电力进行通断控制的功率半导体元件。半导体元件2是例如IGBT(InsulatedGate Bipolar Transistor)。或者，例如，半导体元件2是具有二极管功能的半导体元件。在实施方式1中，半导体装置100具备一对这2种半导体元件。半导体元件2可以是Si制的IGBT、MOSFET(metal-oxide-semiconductor field-effect transistor)或二极管，它们也可以是SiC制或GaN制。这些IGBT、MOSFET等半导体元件2由于对大电流进行通断控制，因而发热量大。因此，在半导体装置100设置导热率高、有效地散热的金属板1。
在半导体元件2，在表面设置有第1电极21，在背面设置有第2电极22。在半导体元件2为IGBT的情况下，在表面配置栅极电极及发射极电极作为第1电极21即表面电极，在背面配置集电极(collector)电极(electrode)作为第2电极22即背面电极。通过将背面的第2电极22与金属板1的一个面11连接，从而将半导体元件2保持于金属板1之上。表面电极及背面电极是例如Ti-Ni-Au等合金。在实施方式1中，半导体元件2的第2电极22通过接合材料8接合于金属板1的一个面11。接合材料8是具有导电性且包含Ag或Cu的接合材料。
配线板3包含彼此相对的第1面31及第2面32。配线板3具有导电性，例如由铜或铜合金构成。配线板3的第1面31以与半导体元件2的第1电极21相对的方式与该第1电极21连接。在实施方式1中，配线板3的第1面31经由接合材料8与半导体元件2的第1电极21接合。该接合材料8具有导电性，包含Ag或Cu。配线板3具有热容量。配线板3的厚度优选0.1μm至几mm。配线板3具有能够调整热膨胀系数的功能。在半导体装置100的内部，由于各部件的热膨胀系数差而产生热变形或热应力，因此为了实现长寿命及高可靠化，需要调整功能。
第1导体4具有板状的形状。第1导体4的一端配置为能够与外部连接，另一端的一个面4a侧固定于配线板3的第2面32。第1导体4通过与配线板3连接，从而被配线到半导体元件2的第1电极21。此外，在图1及图2中，省略一端的图示，仅图示出另一端。图3是放大示出实施方式1中的第1导体4的另一端的结构的剖视图。第1导体4在另一端的一个面4a包含至少1个凸型的台阶41。在实施方式1中，设置有2个凸型的台阶41。在一个面4a设置的凸型的台阶的个数依赖于半导体元件2的大小或配线板3的大小。例如，在半导体元件2的尺寸并没有大到能够设置多个凸型的台阶的情况下，在第1导体4设置1个凸型的台阶。各凸型的台阶41的顶部包含相对于配线板3的第2面32平行的接触面42。通过使接触面42和配线板3的第2面32密接，第1导体4的另一端被固定于配线板3的第2面32。此外，在实施方式1中，在设置有各凸型的台阶41的位置，相反侧的另一个面4b为平面。第1导体4例如由铜或铜合金构成，是第1导体4的厚度为0.5～2mm左右的平板。
如图1所示，第2导体5具有板状的形状。第2导体5的一端配置为能够与外部连接，另一端的一个面5a侧固定于金属板1的一个面11。即，第2导体5通过向半导体元件2的第2电极22进行配线，从而配线到半导体元件2的第2电极22。此外，在图1及图2中，省略一端的图示，仅图示出另一端。图4是放大示出实施方式1中的第2导体5的另一端的结构的剖视图。第2导体5在另一端的一个面5a包含至少1个凸型的台阶51。在实施方式1中，设置有1个凸型的台阶51。凸型的台阶51的顶部包含相对于金属板1的一个面11平行的接触面52。通过使第2导体5的接触面52和金属板1的一个面11密接，第2导体5的另一端被固定于金属板1的一个面11。此外，在实施方式1中，在设置有凸型的台阶51的位置，相反侧的另一个面5b为平面。第2导体5例如由铜或铜合金构成，是第2导体5的厚度为0.5～2mm左右的平板。
通过以上连接，在半导体元件2为IGBT的情况下，在表面设置的发射极电极(第1电极21)能够经由接合材料8、配线板3及第1导体4与外部端子(未图示)连接。在半导体元件2的背面设置的集电极电极(第2电极22)能够经由接合材料8、金属板1及第2导体5与外部端子(未图示)连接。即，通过第1导体4及第2导体5，半导体元件2受到来自外部的通断控制。
如图1所示，散热板6被固接于位于与金属板1的连接半导体元件2的一个面11相反侧的金属板1的背面。散热板6由绝缘层和保护金属层的层叠构造(未图示)构成。绝缘层例如包含混入有氮化硼或氧化铝等填料的环氧树脂。保护金属层由导热性高的铜、铝等构成。由半导体元件2发出的热量在接合材料8、金属板1、散热板6进行传导而散热。并且，虽省略了图示，但在散热板6也可以连接有其它散热板、具备多个鳍片的散热器或者水冷鳍片。这样的结构使散热性能即冷却性能提高。其结果，抑制了半导体元件2的温度上升，半导体元件2高效即低损耗地进行工作。此外，散热板6不是必要的，依赖于使用半导体装置100的系统结构。
封装材料7对上述金属板1、半导体元件2、配线板3、第1导体4及第2导体5进行封装。封装材料7是例如树脂。
(半导体装置的制造方法)
在对实施方式1中的半导体装置100的制造方法进行说明之前，对前提技术中的半导体装置的制造方法的问题进行叙述。通常，从半导体元件2的表面电极向外部电极的配线的连接通过将铝等金属导线进行导线键合而进行配线，将金属导线和电极进行固相接合。在对大电流进行通断控制的电力半导体装置，并列配置有多个金属导线，另外，各导线采用线径500μm左右的粗的金属导线。但是，由电力半导体装置处理的电气容量或接合位置的寿命存在极限。由于电力半导体装置的小型化的发展，半导体元件的尺寸也变小，因此难以使金属导线的并列数量增加。另外，在采用具有比以往大的线径的金属导线的情况下，需要提高在作为金属导线的接合面的表面电极处施加的压力、振动而进行接合。在上述压力或应力过大的情况下，半导体元件可能被破坏。并且，电力半导体装置需要耐受于严苛的热循环、功率循环。电力半导体装置的规格输出处于持续增大为几百伏特、几千伏特的倾向。关于配线的连接，需要可应对高电流，促进电阻的降低，且即使在严苛的环境下，也实现接合部的可靠性及高寿命化。
接着，对实施方式1中的半导体装置100的制造方法进行叙述。图5是表示实施方式1中的半导体装置100的制造方法的流程图。
在步骤S1中，准备金属板1、半导体元件2、配线板3及第1导体4。在实施方式1中，在该步骤S1中，还准备上述第2导体5。另外，就所准备的半导体元件2而言，第2电极22与金属板1连接，该半导体元件2被保持于金属板1之上。此处，半导体元件2的第2电极22以如下方式经由接合材料8而接合至金属板1的一个面11，即，该第2电极22以与一个面11相对的方式被保持于一个面11。接合材料8是通过将包含Ag或者Cu的烧结材料烧结而形成的。即，第2电极22和金属板1通过低温烧结接合进行接合。在低温烧结接合中，通过将在溶剂中包含由保护膜等表面稳定剂覆盖的金属颗粒的烧结材料加热，从而溶剂挥发，金属颗粒彼此接合。金属颗粒的直径为几nm～几μm左右。金属颗粒是例如包含Ag、Cu、Au、Pd、Pt的颗粒。溶剂是例如有机溶剂。颗粒尺寸为纳米等级的金属颗粒通过表面能在比块状的熔点低的温度下凝集而接合。加热温度为150℃～350℃。虽然可以不加压地进行烧结接合，但也可以与需要对应地，实施2MPa～10MPa左右的加压。在不加压地进行烧结的情况下，加热时间为10～120分钟左右。烧结后的接合材料8具有大于或等于900度的熔点，具有高的耐热性和可靠性。烧结后的接合材料8的厚度为20～200μm左右。在烧结材料为糊状类型的情况下，在加热前进行烧结材料的印刷工序及干燥工序。在烧结材料为片材类型的情况下，事先将片材安装，不需要印刷工序及干燥工序。片材类型的烧结材料与以往的糊状类型相比装配性好。片材的厚度是40～400μm的范围内的规定的高度。
在步骤S2中，使配线板3的第1面31以与半导体元件2的第1电极21相对的方式与第1电极21连接。此处，配线板3的第1面31经由接合材料8与半导体元件2的第1电极21接合。步骤S2中的接合材料8及接合方法也与步骤S1相同。
在步骤S3中，以将第1导体4的一端配置为能够与外部连接，且第1导体4的另一端的一个面4a侧位于配线板3的第2面32之上的方式载置第1导体4。此时，第1导体4的各凸型的台阶41的接触面42分别相对于配线板3的第2面32平行地与它们接触。
在步骤S4中，将第1导体4的各凸型的台阶41的接触面42和配线板3的第2面32分别激光接合。由于第1导体4吸收激光而产生的热能将第1导体4及配线板3的一部分熔融，将两者接合。而且，各凸型的台阶41的接触面42和配线板3的第2面32密接，第1导体4的另一端被固定于配线板3的第2面32。由此，第1导体4被配线到半导体元件2的第1电极21。
在第1导体4和半导体元件2之间设置的配线板3防止激光接合时产生的热量传导至半导体元件2。即，由于配线板3的热容量大，因此热量积蓄于配线板3。其结果，能够避免半导体元件2被热量破坏。
在实施方式1中，各凸型的台阶41的接触面42和配线板3的第2面32通过从光纤激光器发出的波长500至1200nm的激光而进行激光接合。在以往的激光接合中，为了获得接合所需要的能量，在接合对象物的表面形成了与Cu相比激光的吸收率高的Ni镀层等。在实施方式1的制造方法中，形成第1导体4或第2导体5的Cu或包含Cu的合金有效地吸收波长500～1200nm的激光。因此，在上述由光纤激光器进行的激光接合中，不需要镀Ni等外层处理。另外，能够针对1个接合位置通过几十ms～1s左右的激光照射进行激光接合。因此，能够实现生产率的提高，能够实现低成本化。
在步骤S5中，以将第2导体5的一端配置为能够与外部连接，且第2导体5的另一端的一个面5a侧位于金属板1的第一个面11之上的方式载置第2导体5。此时，第2导体5的凸型的台阶51的接触面52分别相对于金属板1的一个面11平行地与它们接触。
在步骤S6中，将第2导体5的凸型的台阶51的接触面52和金属板1的一个面11激光接合。由于第2导体5吸收激光而产生的热能将第2导体5及金属板1的一部分熔融，将两者接合。而且，凸型的台阶51的接触面52和金属板1的一个面11密接，第2导体5的另一端被固定于金属板1的一个面11。由此，将第2导体5配线到半导体元件2的第2电极22。此外，与步骤S4相同地，在上述激光接合中，使用光纤激光器。图6是表示实施方式1中的激光接合后的半导体装置100的结构的俯视图。在与第1导体4的各凸型的台阶41的接触面42对应的位置、以及与第2导体5的各凸型的台阶51的接触面52对应的位置，形成有激光接合部80。
在步骤S7中，利用树脂将半导体元件2等封装，将散热板6和金属板1密接而固定。树脂是环氧树脂为主成分的封装材料7，通过传递塑模将半导体元件2等封装。
此外，执行各步骤的顺序并不限于上述顺序，也可以前后颠倒。
如上所述，实施方式1中的半导体装置100具备：金属板1；半导体元件2，其包含在表面设置的第1电极21和在背面设置的第2电极22，第2电极22与金属板1连接，使该半导体元件2被保持于金属板1之上；配线板3，其包含彼此相对的第1面31及第2面32，第1面31以与半导体元件2的第1电极21相对的方式与第1电极21连接；以及导体(第1导体4)，其具有板状的形状，一端配置为能够与外部连接，且另一端的一个面4a侧固定于配线板3的第2面32，使该导体被配线到半导体元件2的第1电极21。第1导体4在另一端的一个面4a包含至少1个凸型的台阶41。第1导体4包含的至少1个凸型的台阶41的顶部，包含相对于配线板3的第2面32平行的接触面42。通过使接触面42和配线板3的第2面32密接，第1导体4的另一端被固定于配线板3的第2面32。
可以想到，在2张平板之间进行激光接合的情况下，在各个进行激光接合的位置，平板之间的接合强度产生波动。这样的接合有可能对半导体装置100所要求的可靠性造成影响。根据实施方式1的半导体装置100，第1导体4的各凸型的台阶41的接触面42配置为相对于配线板3的第2面32平行，彼此可靠地进行接触。因此，抑制了各凸型的台阶41的接触面42和配线板3的第2面32的接合强度的波动。另外，在第1导体4和半导体元件2之间设置热容量大的配线板3。配线板3阻碍激光接合时产生的热量传导至半导体元件2，防止半导体元件2的由热量导致的破坏。半导体装置100在第1导体4的配线这一方面，具有所期望的接合强度，具有高可靠性。
实施方式1中的半导体装置100包含的配线板的第1面31和半导体元件2的第1电极21，或金属板1和半导体元件2的第2电极22经由包含Ag或Cu且具有导电性的接合材料进行连接。
通过这样的结构，包含Ag或Cu的烧结后的接合材料8具有大于或等于900度的熔点，半导体装置100获得高的耐热性及可靠性。
实施方式1中的半导体装置100还具备与第1导体4不同的其它导体(第2导体5)，该其它导体具有板状的形状，一端配置为能够与外部连接，且另一端的一个面5a侧固定于金属板1的一个面11，使该其它导体被配线到半导体元件2的第2电极22。第2导体5在另一端的一个面5a包含至少1个凸型的台阶51。第2导体5包含的至少1个凸型的台阶51的顶部，包含相对于金属板1的一个面11平行的接触面52。通过使第2导体5的接触面52和金属板1的一个面11密接，第2导体5的另一端被固定于金属板1的一个面11。
通过这样的结构，第2导体5的凸型的台阶51的接触面52配置为相对于金属板1的一个面11平行，彼此可靠地进行接触。因此，抑制了凸型的台阶51的接触面52和金属板1的一个面11的接合强度的波动。另外，金属板1和第2导体5以所希望的熔融形状进行接合。半导体装置100获得所期望的接合强度即稳定的接合。
就实施方式1中的半导体装置100的制造方法而言，准备金属板1、半导体元件2、配线板3以及具有板状的形状的第1导体4，将配线板3的第1面31以与半导体元件2的第1电极21相对的方式与第1电极21连接，将第1导体4的一端配置为能够与外部连接，且将第1导体4的另一端的一个面4a侧固定于配线板3的第2面32，将第1导体4配线到半导体元件2的第1电极21，其中，半导体元件2包含在表面设置的第1电极21和在背面设置的第2电极22，第2电极22与金属板1连接，使该半导体元件2被保持于金属板1之上，配线板3包含彼此相对的第1面31及第2面32。第1导体4在另一端的一个面4a包含至少1个凸型的台阶41。第1导体4包含的至少1个凸型的台阶41的顶部包含接触面42。在将第1导体4的另一端的一个面4a侧固定于配线板3的第2面32时，以接触面42相对于配线板3的第2面32平行地与第2面32接触的方式载置第1导体4，将第1导体4的接触面42和配线板3的第2面32激光接合而使它们密接，将第1导体4的另一端固定于配线板3的第2面32。
根据实施方式1的半导体装置100的制造方法，第1导体4的各凸型的台阶41形状的接触面42配置为相对于配线板3的第2面32平行，彼此可靠地进行接触。因此，抑制了各凸型的台阶41的接触面42和配线板3的第2面32的接合强度的波动。另外，在第1导体4和半导体元件2之间设置热容量大的配线板3。配线板3阻碍激光接合时产生的热量传导至半导体元件2，防止半导体元件2的由热量导致的破坏。半导体装置100在第1导体4的配线这一方面，具有所期望的接合强度，具有高可靠性。
实施方式1中的半导体装置100的制造方法在将第1导体4的接触面42和配线板3的第2面32激光接合时，通过从光纤激光器发出的波长500nm至1200nm的激光进行激光接合。
通过这样的结构，不需要如以往那样在接合对象物的表面进行镀Ni等外层处理。另外，由于有效地吸收激光，因此能够针对1个接合位置通过几十ms～1s左右的激光照射进行激光接合。因此，能够实现生产率的提高，能够实现低成本化。
就实施方式1中的半导体装置100的制造方法而言，将配线板3的第1面31和半导体元件2的第1电极21，或金属板1和半导体元件2的第2电极22经由接合材料8进行连接。接合材料8是将包含Ag或者Cu的烧结材料烧结而形成的。
通过这样的结构，不需要如以往的接合工序那样，将半导体装置100加热至高熔点，能够避免由热应力引起的变形或翘曲的产生。由于烧结后的接合材料8具有大于或等于900度的熔点，因此在之后的激光接合的工序中，能够抑制焊料再熔融，并且防止半导体元件2的热破坏。与焊料接合相比，通过使用了烧结材料的接合制造出的半导体装置100具有高的耐热性及可靠性。
就实施方式1中的半导体装置100的制造方法而言，还准备与第1导体4不同的第2导体5，具有板状的形状，将第2导体5的一端配置为能够与外部连接，且将第2导体5的另一端的一个面5a侧固定于金属板1的一个面11，将第2导体5配线到半导体元件2的第2电极22。第2导体5在第2导体5的另一端的一个面5a包含至少1个凸型的台阶51。第2导体5包含的至少1个凸型的台阶51的顶部，包含与金属板1的一个面11接触的接触面52。在将第2导体5的另一端的一个面5a侧固定于金属板1的一个面11时，以第2导体5的接触面52相对于金属板1的一个面11平行地与一个面11接触的方式载置第2导体5，将第2导体5的接触面52和金属板1的一个面11激光接合而使它们密接，将第2导体5的另一端固定于金属板1的一个面11。
通过这样的结构，第2导体5的凸型的台阶51的接触面52配置为相对于金属板1的一个面11平行，彼此可靠地进行接触。因此，抑制了凸型的台阶51的接触面52和金属板1的一个面11的接合强度的波动。另外，金属板1和第2导体5以所希望的熔融形状进行接合。半导体装置100获得所期望的接合强度即稳定的接合。
实施方式1中的半导体装置100的制造方法在将第2导体5的接触面52和金属板1的一个面11激光接合时，通过从光纤激光器发出的波长500至1200nm的激光进行激光接合。
上述从光纤激光器发出的波长500～1200nm的激光被形成第2导体5的Cu或包含Cu的合金有效地吸取。因此，不需要如以往那样在接合对象物的表面进行镀Ni等外层处理。另外，由于有效地吸收激光，因此能够针对1个接合位置通过几十ms～1s左右的激光照射进行激光接合。因此，能够实现生产率的提高，能够实现低成本化。
[实施方式2]
对实施方式2中的半导体装置及半导体装置的制造方法进行说明。
图7是放大示出实施方式2中的第1导体4的另一端的结构的剖视图。图8是放大示出实施方式2中的第2导体5的另一端的结构的剖视图。其它的结构与实施方式1中的半导体装置100相同。
实施方式2中的第1导体4在另一个面4b，在与各凸型的台阶41对应的位置包含凹型的台阶43。此外，另一个面4b是指与接触面42所在的一个面4a侧相反侧的面。位于第1导体4包含的各凸型的台阶41的顶部处的接触面42相对于配线板3的第2面32平行且与第2面32密接。
相同地，第2导体5在另一个面5b，在与凸型的台阶51对应的位置包含凹型的台阶53。位于第2导体5包含的凸型的台阶51的顶部处的接触面52相对于金属板1的一个面11平行且与一个面11密接。
在图5所示的半导体装置的制造方法的步骤S4中，通过在第1导体4的另一个面4b设置凹型的台阶43，从而激光接合装置能够通过图像处理从另一个面4b侧对应激光接合的位置进行自动识别。激光接合装置对识别出的位置准确地供给激光能量。其结果，能够获得良好的接合形状及接合强度，或者，抑制接合波动。通过将步骤S4中的激光接合工序自动化，从而半导体装置100的制造工序稳定化，生产率提高。步骤S6中的第2导体5的接触面52和金属板1的一个面11的激光接合也同样如此。
[实施方式3]
对实施方式3中的半导体装置及半导体装置的制造方法进行说明。此外，对于与实施方式1或2相同的结构及动作省略说明。
图9是表示实施方式3中的半导体装置102的结构的剖视图。图10是放大示出实施方式3中的第1导体4的另一端的结构的剖视图。
如图10所示，第1导体4包含的各凸型的台阶41具有凸起形状。与配线板3的第2面32密接的接触面42位于凸起形状的顶部。虽然省略了图示，但第2导体5也具有相同的结构。
如图9所示，实施方式3中的半导体装置102没有设置散热板6，金属板1及比金属板1更下层的结构与实施方式1的结构不同。在金属板1的一个面11形成有电路图案(未图示)，与该电路图案对应地连接有半导体元件2。在半导体装置102，在相对于保持半导体元件2并与第2配线连接的金属板1的一个面11位于相反侧的下表面，设置绝缘层12，并且在该绝缘层12的下层设置有金属层13。绝缘层12由Si3N4、AlN或Al2O3构成。金属层13由厚度2～7mm的Cu构成，确保了热容量。另外，半导体元件2、金属板1、第1导体4及第2导体5等以容纳于壳体10内的方式配置，利用封装材料7将壳体10内封装。壳体10是利用PPT(Polyethyleneterephthalate)或PBT(Polybutylene terephthalate)等成型的。封装材料7是以硅酮或环氧树脂为主要材料的树脂。
在半导体装置102的制造方法中，第1导体4的凸起形状是利用冲压等容易的方法形成的。第1导体4和配线板3的接合及第2导体5和金属板1的接合的方法与实施方式1相同。
[实施方式4]
对实施方式4中的半导体装置及半导体装置的制造方法进行说明。此外，对于与其它实施方式相同的结构及动作省略说明。
图11是表示实施方式4中的半导体装置103的结构的剖视图。在半导体装置103，在半导体元件2的第1电极21和固定第1导体4的配线板3之间设置有由金属构成的至少1个连接板14。在实施方式4中，设置有1个连接板14。连接板14也可以具有与配线板3相同的结构。即，连接板14具有导电性，例如，由铜或铜合金构成。连接板14的厚度优选为0.1μm至几mm。连接板14和半导体元件2的第2电极22经由接合材料8连接，相同地，连接板14和配线板3的第1面31经由接合材料8连接。
实施方式4中的接合材料8具有导电性，包含Sn作为主要成分。接合材料8包含Cu-Sn系的金属间化合物，具有高耐热性。另外，接合材料8也可以包含树脂成分。通过混入的树脂成分，使接合材料8的弹性模量减小，缓和热变形或热应力。实施方式1所示的半导体装置100的接合材料8也可以与上述构成相同。即，配线板3的第1面31和半导体元件2的第1电极21，或金属板1的一个面11和半导体元件2的第2电极22也可以经由包含Sn且具有导电性的接合材料8进行连接。另外，相反，实施方式4中的接合材料也可以是实施方式1所示的包含Ag或Cu的接合材料8。
在实施方式4中，在图5所示的半导体装置的制造方法的步骤S1中，准备连接板14。然后，在步骤S2之前，将连接板14连接于半导体元件2的第1电极21之上。此处，连接板14通过上述接合材料接合于第1电极21之上。
在步骤S2中，将配线板3的第1面31以与半导体元件2的第1电极21相对的方式与第1电极21连接。在实施方式4中，配线板3的第1面31经由接合材料8、连接板14与半导体元件2的第1电极21连接。此时，上述包含Sn的接合材料8是通过将包含Sn的插入材料进行液相扩散接合而形成的。
综上所述，实施方式4中的半导体装置100在半导体元件2的第1电极21和固定第1导体4的配线板3之间，还具备由金属构成的至少1个连接板14。
通过这样的结构，激光接合时产生的热量变得不易于通过配线板3及连接板14传导至半导体元件2。半导体元件2的可靠性提高。另外，通过激光接合，获得了稳定的接合，半导体装置100的可靠性提高。
[实施方式5]
对实施方式5中的半导体装置及半导体装置的制造方法进行说明。此外，对于与其它实施方式相同的结构及动作省略说明。
图12是表示实施方式5中的半导体装置104的结构的剖视图。图13是表示实施方式5中的半导体装置104的结构的俯视图。第1导体4包含在第1导体4的凸状的台阶的接触面42设置的贯穿孔9。第1导体4的接触面42连续地沿该贯穿孔9的外周与配线板3的第2面32密接。相同地，第2导体5包含在第2导体5的凸状的台阶的接触面42设置的贯穿孔9。第2导体5的接触面42连续地沿该贯穿孔9的外周与金属板1的一个面11密接。
在实施方式5的半导体装置100的制造方法中，在激光接合时，激光照射到贯穿孔9的周围。与实施方式2的半导体装置100的制造方法相同地，在激光接合工序中，由于激光接合装置能够通过图像处理等掌握应接合的位置，因此能够将激光准确地照射到第1导体4的接触面42或第2导体5的接触面42。其结果，获得了具有良好的强度的接合。另外，能够实现激光接合工序的自动化，生产率提高。接合后的状态如图13所示，贯穿孔9尺寸小。
此外，本发明可以在其发明的范围内将各实施方式自由地组合，或对各实施方式适当进行变形、省略。虽然对本发明进行了详细说明，但上述的说明在全部的方面都只是例示，本发明并不限定于此。应当理解为，在不脱离本发明的范围的情况下，能够设想到未例示的无数的变形例。

Claims (24)

1.一种半导体装置，其具备：
金属板；
半导体元件，其包含在表面设置的第1电极和在背面设置的第2电极，所述第2电极与所述金属板连接，使该半导体元件被保持于所述金属板之上；
配线板，其包含彼此相对的第1面及第2面，所述第1面以与所述半导体元件的所述第1电极相对的方式与所述第1电极连接；以及
导体，其具有板状的形状，一端配置为能够与外部连接，且另一端的一个面固定于所述配线板的所述第2面，使所述导体被配线到所述半导体元件的所述第1电极，
所述导体是没有形成镀敷外层的铜或含铜的合金，所述导体在所述另一端的所述一个面包含至少1个凸型的台阶，
所述导体包含的所述至少1个凸型的台阶的顶部，包含相对于所述配线板的所述第2面平行的接触面，
所述另一端的所述一个面处的所述接触面的周围包含相对于所述配线板的所述第2面空开空间且与所述配线板的所述第2面相对的平面，
通过使所述接触面和所述配线板的所述第2面密接，所述导体的所述另一端被固定于所述配线板的所述第2面。
2.根据权利要求1所述的半导体装置，其中，
所述导体在与所述一个面的所述至少1个凸型的台阶对应的另一个面的位置，包含凹型的台阶。
3.根据权利要求1或2所述的半导体装置，其中，
所述导体包含在所述导体的所述接触面设置的贯穿孔。
4.根据权利要求3所述的半导体装置，其中，
所述导体的所述接触面连续地沿所述贯穿孔的外周，与所述配线板的所述第2面密接。
5.根据权利要求1或2所述的半导体装置，其中，
所述配线板的所述第1面和所述半导体元件的所述第1电极，或所述金属板和所述半导体元件的所述第2电极，经由包含Ag或者Cu的烧结材料或包含Sn以及树脂成分的接合材料进行连接。
6.根据权利要求1或2所述的半导体装置，其中，
在所述半导体元件的所述第1电极和固定所述导体的所述配线板之间，还具备由金属构成的至少1个连接板。
7.根据权利要求6所述的半导体装置，其中，
所述连接板和所述半导体元件的所述第1电极，或所述连接板和所述配线板，经由包含Ag、Cu或Sn且具有导电性的接合材料进行连接。
8.根据权利要求1或2所述的半导体装置，其中，
还具备与所述导体不同的其它导体，该其它导体具有板状的形状，该其它导体的一端配置为能够与外部连接，且另一端的一个面固定于所述金属板的一个面，使该其它导体被配线到所述半导体元件的所述第2电极，
所述其它导体是没有形成镀敷外层的铜或含铜的合金，所述其它导体在所述另一端的所述一个面包含至少1个凸型的台阶，
所述其它导体包含的所述至少1个凸型的台阶的顶部，包含相对于所述金属板的所述一个面平行的接触面，
所述其它导体的所述另一端的所述一个面处的所述接触面的周围包含相对于所述金属板的所述一个面空开空间且与所述金属板的所述一个面相对的平面，
通过使所述其它导体的所述接触面和所述金属板的所述一个面密接，所述其它导体的所述另一端被固定于所述金属板的所述一个面。
9.根据权利要求8所述的半导体装置，其中，
所述其它导体在与所述其它导体的所述一个面的所述至少1个凸型的台阶对应的另一个面的位置，包含凹型的台阶。
10.根据权利要求8所述的半导体装置，其中，
所述其它导体包含在所述其它导体的所述接触面设置的贯穿孔。
11.根据权利要求10所述的半导体装置，其中，
所述其它导体的所述接触面连续地沿在所述其它导体的所述接触面设置的所述贯穿孔的外周，与所述金属板的所述一个面密接。
12.一种半导体装置的制造方法，
准备：金属板；半导体元件，其包含在表面设置的第1电极和在背面设置的第2电极，所述第2电极与所述金属板连接，使该半导体元件被保持于所述金属板之上；配线板，其包含彼此相对的第1面及第2面；以及导体，其具有板状的形状，所述导体是没有形成镀敷外层的铜或含铜的合金，
将所述配线板的所述第1面以与所述半导体元件的所述第1电极相对的方式与所述第1电极连接，
将所述导体的一端配置为能够与外部连接，且将所述导体的另一端的一个面固定于所述配线板的所述第2面，将所述导体配线到所述半导体元件的所述第1电极，
所述导体在所述另一端的所述一个面包含至少1个凸型的台阶，
所述导体包含的所述至少1个凸型的台阶的顶部包含接触面，
在将所述导体的所述另一端的所述一个面固定于所述配线板的所述第2面时，
以所述另一端的所述一个面处的所述接触面的周围是平面，相对于所述配线板的所述第2面空开空间且与所述配线板的所述第2面相对，所述接触面相对于所述配线板的所述第2面平行地与所述第2面接触的方式载置所述导体，
将所述导体的所述接触面和所述配线板的所述第2面激光接合而使所述接触面和所述第2面密接，将所述导体的所述另一端固定于所述配线板的所述第2面。
13.根据权利要求12所述的半导体装置的制造方法，其中，
所述导体在与所述一个面的所述至少1个凸型的台阶对应的另一个面的位置，包含凹型的台阶。
14.根据权利要求12或13所述的半导体装置的制造方法，其中，
所述导体包含在所述导体的所述接触面设置的贯穿孔。
15.根据权利要求14所述的半导体装置的制造方法，其中，
连续地沿所述贯穿孔的外周，将所述导体的所述接触面与所述配线板的所述第2面激光接合而使所述接触面与所述第2面密接。
16.根据权利要求12或13所述的半导体装置的制造方法，其中，
在将所述导体的所述接触面和所述配线板的所述第2面激光接合时，
通过从光纤激光器发出的波长500nm至1200nm的激光进行激光接合。
17.根据权利要求12或13所述的半导体装置的制造方法，其中，
将所述配线板的所述第1面和所述半导体元件的所述第1电极，或所述金属板和所述半导体元件的所述第2电极经由接合材料连接，
所述接合材料是将包含Ag或Cu的烧结材料烧结而形成的，或者，是将包含Sn的插入材料进行液相扩散接合而形成的。
18.根据权利要求12或13所述的半导体装置的制造方法，其中，
在所述半导体元件的所述第1电极和固定所述导体的所述配线板之间，还连接由金属构成的至少1个连接板。
19.根据权利要求18所述的半导体装置的制造方法，其中，
将所述连接板和所述半导体元件的所述第1电极，或所述连接板和所述配线板经由接合材料连接，
所述接合材料是将包含Ag或Cu的烧结材料烧结而形成的，或者，是将包含Sn的插入材料进行液相扩散接合而形成的。
20.根据权利要求12或13所述的半导体装置的制造方法，其中，
还准备具有板状的形状，与所述导体不同的其它导体，所述其它导体是没有形成镀敷外层的铜或含铜的合金，
将所述其它导体的一端配置为能够与外部连接，且将所述其它导体的另一端的一个面固定于所述金属板的一个面，将所述其它导体配线到所述半导体元件的所述第2电极，
所述其它导体在所述其它导体的所述另一端的所述一个面包含至少1个凸型的台阶，
所述其它导体包含的所述至少1个凸型的台阶的顶部，包含与所述金属板的所述一个面接触的接触面，
在将所述其它导体的所述另一端的所述一个面固定于所述金属板的所述一个面时，
以所述其它导体的所述另一端的所述一个面处的所述接触面的周围是平面，相对于所述金属板的所述一个面空开空间且与所述金属板的所述一个面相对，所述其它导体的所述接触面相对于所述金属板的所述一个面平行地与所述金属板的所述一个面接触的方式载置所述其它导体，
将所述其它导体的所述接触面和所述金属板的所述一个面激光接合而使所述其它导体的所述接触面和所述金属板的所述一个面密接，将所述其它导体的所述另一端固定于所述金属板的所述一个面。
21.根据权利要求20所述的半导体装置的制造方法，其中，
所述其它导体在与所述其它导体的所述一个面的所述至少1个凸型的台阶对应的另一个面的位置，包含凹型的台阶。
22.根据权利要求20所述的半导体装置的制造方法，其中，
所述其它导体包含在所述其它导体的所述接触面设置的贯穿孔。
23.根据权利要求22所述的半导体装置的制造方法，其中，
连续地沿在所述其它导体的所述接触面设置的所述贯穿孔的外周，将所述其它导体的所述接触面与所述金属板的所述一个面激光接合而使所述其它导体的所述接触面与所述金属板的所述一个面密接。
24.根据权利要求20所述的半导体装置的制造方法，其中，
在将所述其它导体的所述接触面和所述金属板的所述一个面激光接合时，
通过从光纤激光器发出的波长500nm至1200nm的激光进行激光接合。
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