CN109671651A - A kind of ultrasound release type Micro-LED flood tide transfer method - Google Patents
A kind of ultrasound release type Micro-LED flood tide transfer method Download PDFInfo
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- CN109671651A CN109671651A CN201811564324.2A CN201811564324A CN109671651A CN 109671651 A CN109671651 A CN 109671651A CN 201811564324 A CN201811564324 A CN 201811564324A CN 109671651 A CN109671651 A CN 109671651A
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- 238000000034 method Methods 0.000 title claims abstract description 33
- 238000002604 ultrasonography Methods 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 76
- 239000012528 membrane Substances 0.000 claims abstract description 21
- 230000000694 effects Effects 0.000 claims abstract description 12
- 230000005484 gravity Effects 0.000 claims abstract description 6
- 238000002525 ultrasonication Methods 0.000 claims abstract description 4
- 238000007599 discharging Methods 0.000 claims description 3
- 238000009434 installation Methods 0.000 claims description 3
- 238000013268 sustained release Methods 0.000 claims description 3
- 239000012730 sustained-release form Substances 0.000 claims description 3
- 238000004093 laser heating Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 4
- 210000004027 cell Anatomy 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000013589 supplement Substances 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000026683 transduction Effects 0.000 description 1
- 238000010361 transduction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 230000003245 working effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- Microelectronics & Electronic Packaging (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
It is a kind of ultrasound release type Micro-LED flood tide transfer method include the following steps, A, transfer prepares, transfer base substrate is horizontal positioned, the lower surface high resilience film of transfer base substrate, chip is adhered to the surface of elastic membrane, it is equipped with supersonic generation unit in the position for the upper surface for laying flat transfer base substrate, ultrasonic transducer is installed on the supersonic generation unit surface；B, somewhere wafer alignment on selection alignment, supersonic generation unit and transfer base substrate is realized by ultrasonic transducer and is directly contacted；C, deformation discharges, and in certain specific positions, the elastic membrane at this is deformed for ultrasonication, is arched upward in back surface of the wafer, so that chip is detached from transfer base substrate, falls in target substrate under the effect of gravity；This method can realize being released effectively for laser-light transparent and the chip on nontransparent transfer base substrate, avoid the methods of conventional laser removing/laser heating removing heat affecting unfavorable to chip and transfer base substrate.
Description
Technical field
The present invention relates to semiconductor light electro-technical field, especially a kind of Micro-LED flood tide transfer method.
Background technique
LED (light emitting diode) is a kind of semiconductor electronic component that can be luminous, has that energy conversion efficiency is high, when reaction
Between it is short, the advantages that long service life；Micro-LED (micro- light emitting diode) is that traditional LED structure is carried out to filming, small
Change, obtained by array, size is only at 1~10 μm.The advantages of due to LED display technique, Micro-LED is used more and more
The occasion of display, such as: micro projection (virtual reality device), smaller screen show that (intelligent wearable device), middle large-size screen monitors show (electricity
Depending on), super large screen show (outdoor display screen) etc..But the Micro-LED display screen manufacturing process problem of ultrahigh resolution is still made
About Micro-LED be applied to such use.It can be using cheap productions such as printings compared to OLED (Organic Light Emitting Diode)
Method produces the light-emitting surface of large area easily, one piece of large scale is made, high-resolution Micro-LED display screen is needed to hundred
The Micro-LED chip array of ten thousand or ten million piece micron order size assembles (flood tide transfer), therefore brings huge manufacturing cost
Consumption.Flood tide transfer require the Micro-LED chip of micron order size is precisely grabbed from alms giver's wafer, expanded matrix away from
From properly placement is fixed on target substrate (such as display backplane), with existing mainstream LED die bond speed, generally requires to spend
The expense dozens of days time mounts one piece of video screen, is far from satisfying the requirement of industrialization, therefore, needs to propose new side
Method come improve grasp speed, crawl precision, expand cell array distance, exact placement chip, with accelerate Micro-LED show skill
The industrialization pace of art.
For simultaneously this technical process of transferring plates is accurately removed from alms giver's wafer, mainstream scheme includes: one, swashs at present
Photospallation technology.The Micro-LED chip completed the process on the transfer base substrate of laser-light transparent, is applied using light-sensitive emulsion water adhesion
Chip on a certain specific position of laser irradiation, photosensitive glue absorb laser energy, and glue loses viscosity, and chip is in gravity
Under fall on the corresponding position of target substrate.This method uses the scheme of laser irradiation, can choose ground property removing it is specified away from
Two chips sowed discord realize the purpose for expanding cell array distance while removing.But the program requires transfer base
Plate is necessary for laser light absorbent material, and the transfer base substrate after a laser lift-off is frequently subjected to damage, and can not reuse.
Two, laser heats release tech.Among the transfer base substrate and the Micro-LED chip that completes the process of laser-light transparent, one is clipped
Layer elastic layer；When laser beam is irradiated to elastic layer by the transfer base substrate of laser-light transparent, keep film prominent by laser thermal effect
It rises, Micro-LED chip is jacked up and away from transfer base substrate；Micro-LED chip under the effect of gravity, falls in target lining
On the corresponding position at bottom.This scheme reduces the adverse effects that photosensitive glue may generate Micro-LED chip, still,
Since the fuel factor of laser is utilized in the program, therefore, it is impossible to avoid the heat affecting unfavorable to chip.
Therefore, it needs to propose a kind of new method, the Micro-LED in laser-light transparent and opaque transfer base substrate can be made brilliant
Release can be achieved in piece, and can avoid damage transfer base substrate, realizes the reuse of transfer base substrate, and can overcome laser thermal effect
Cope with the adverse effect that Micro-LED is generated.
Summary of the invention
In view of the foregoing drawbacks, it is an object of the invention to propose a kind of Micro-LED flood tide transfer method, this method can be real
Existing laser-light transparent is released effectively with the Micro-LED chip on nontransparent transfer base substrate, and conventional laser removing/laser is avoided to add
Hot soarfing from the methods of the heat affecting unfavorable to Micro-LED chip and Micro-LED transfer base substrate, while Micro-LED shift
Substrate can reuse.
To achieve this purpose, the present invention adopts the following technical scheme:
A kind of ultrasound release type Micro-LED flood tide transfer method, includes the following steps,
A, transfer prepares, and transfer base substrate is horizontal positioned, the lower surface high resilience film of transfer base substrate, Micro-LED chip
It is adhered to the surface of elastic membrane, supersonic generation unit is equipped in the position for the upper surface for laying flat transfer base substrate, occurs in the ultrasound
Cell surface is equipped with ultrasonic transducer；
B, somewhere Micro-LED wafer alignment on selection alignment, supersonic generation unit and transfer base substrate, passes through ultrasonic transduction
Device is realized and is directly contacted；
C, deformation discharges, and in certain specific positions, the elastic membrane at this is deformed, in Micro-LED for ultrasonication
Back surface of the wafer arches upward, and so that chip is detached from transfer base substrate, falls in target substrate under the effect of gravity；
D, sustained release, after discharging transfer base substrate somewhere Micro-LED chip, supersonic generation unit is moved to next release
Position, the Micro-LED wafer alignment in this position, discharges Micro-LED chip at this.
Wherein, the transfer base substrate is laser-light transparent or nontransparent substrate, and the transfer base substrate is rigid substrates.
In addition, the power of supersonic generation unit is 0.1~20W in the step A.
In addition, the geometric dimension of supersonic generation unit is less than the geometric dimension of Micro-LED chip in the step A.
In addition, the spacing of ultrasonic transducer is much larger than Micro- on transfer base substrate on supersonic generation unit in the step A
The spacing of LED wafer, the former is the positive integer times of the latter；
Ultrasonic transducer can realize that spacing changes by the way that mechanical structure is mobile on supersonic generation unit；
On supersonic generation unit in the spacing and target substrate of ultrasonic transducer Micro-LED chip installation site spacing
It is equal.
In addition, the quantity of the supersonic generation unit of effect is equal to or more than simultaneously on same transfer base substrate in the step A
1.
As the supplement to above-mentioned technology, in the step A, the geometric dimension of chip is 1~10 μm on transfer base substrate.
As the supplement to above-mentioned technology, in the step A, the thickness of transfer base substrate should be less than or be equal to 5mm.
Beneficial effects of the present invention: 1, this programme is the deformation for causing elastic membrane by ultrasonic wave, so that elastic membrane be made to send out
Raw deformation, finally falls the Micro-LED chip pasted in elastic membrane, in the technical program, not will use in whole process
To the environment of laser, liquid and high temperature, chip is not influenced, and elastic membrane can return after supersonic generation unit stopping
Shape is restored, can be reused；2, since this programme is to pass through substrate using sound wave, if so substrate hard, ensure that
Sound wave can sufficiently be transmitted to elastic membrane, and then elastic membrane is made to have enough deflections.
Detailed description of the invention
Fig. 1 is the Micro-LED flood tide transfer method flow chart of one embodiment of the present of invention；
Fig. 2 is the Micro-LED flood tide transfer method schematic diagram of one embodiment of the present of invention；.
Wherein: 1, ultrasonic transducer 1；2, ultrasonic wave；3, elastic membrane；4, Micro-LED chip；5, supersonic generation unit；
6, transfer base substrate；7, target substrate.
Specific embodiment
To further illustrate the technical scheme of the present invention below with reference to the accompanying drawings and specific embodiments.
As shown in Figs. 1-2, a kind of ultrasonic release type Micro-LED flood tide transfer method, includes the following steps,
A, transfer prepares, and transfer base substrate 6 is horizontal positioned, and the lower surface of transfer base substrate 6 has elastic membrane 3, and Micro-LED is brilliant
Piece 4 is adhered to the surface of elastic membrane 3, is equipped with supersonic generation unit 5 in the position for laying flat the upper surface of transfer base substrate 6, super at this
5 surface of sound generating unit is equipped with ultrasonic transducer 1；
B, selection alignment, supersonic generation unit 5 are aligned with somewhere Micro-LED chip 4 on transfer base substrate 6, pass through ultrasound
Energy converter 1 realizes direct contact；
C, deformation discharges, and in certain specific positions, the elastic membrane 3 at this is deformed, in Micro-LED for ultrasonication
4 back side of chip is arched upward, and so that chip is detached from transfer base substrate 6, is fallen in target substrate 7 under the effect of gravity；
D, sustained release, after discharging 6 somewhere Micro-LED chip 4 of transfer base substrate, supersonic generation unit 5 is moved to next
Releasing position is aligned with Micro-LED chip 4 in this position, discharges Micro-LED chip 4 at this.
The flood tide branch mode of this programme is combined using sound wave.
This programme is the deformation for causing elastic membrane 3 by ultrasonic wave, to make elastic membrane 3, deformation occurs, finally makes elasticity
The Micro-LED chip pasted on film 3 is fallen, and in the technical program, not will use laser, liquid and height in whole process
The environment of temperature, does not influence chip, and elastic membrane 3 can restore after the stopping of supersonic generation unit 5, can repeat
It utilizes.
Preferably, the transfer base substrate 6 is laser-light transparent or nontransparent substrate, the transfer base substrate 6 is rigid substrates.
Since this programme is to pass through substrate using sound wave, if so substrate hard, ensure that sound wave can be passed sufficiently
It is delivered to elastic membrane, and then elastic membrane 3 is made there are enough deflections.
Preferably, the power of supersonic generation unit 5 is 0.1~20W in the step A.
Further, in the step A, the geometric dimension of supersonic generation unit 5 is less than the dimensioning of Micro-LED chip
It is very little.
The geometric dimension of supersonic generation unit 5 is less than the geometric dimension of Micro-LED chip, and chip single is made to fall off one
It is a, it ensure that the transfer precision of chip, avoid chip from once falling off multiple.
Further, in the step A, the spacing of ultrasonic transducer 1 is much larger than transfer base substrate 6 on supersonic generation unit 5
The spacing of upper Micro-LED chip, the former is the positive integer times of the latter；
Ultrasonic transducer 1 can realize that spacing changes by the way that mechanical structure is mobile on supersonic generation unit 5；
Micro-LED chip installation site in the spacing Yu target substrate 7 of ultrasonic transducer 1 on supersonic generation unit 5
Spacing is equal.
This programme belongs to extension program, i.e., ultrasound transducer array is arranged, and once shifts multiple chips, and has properly
Spacing, do not interfere with the precision to fall off.
Preferably, in the step A, on same transfer base substrate 6 simultaneously the quantity of the supersonic generation unit 5 of effect be equal to or
Greater than 1.
The quantity of supersonic generation unit 5 be equipped with it is multiple, the efficiency of disengaging can be improved.
Further, in the step A, the geometric dimension of chip is 1~10 μm on transfer base substrate 6.
Size adaptation range in this programme can guarantee that current chip can use this method.
Further, in the step A, the thickness of transfer base substrate 6 should be less than or be equal to 5mm.
Transfer base substrate 6 it is too thick if, the working effect of supersonic generation unit 5 is influenced, so thickness should be less than or be equal to
5mm is preferred.
The technical principle of the invention is described above in combination with a specific embodiment.These descriptions are intended merely to explain of the invention
Principle, and shall not be construed in any way as a limitation of the scope of protection of the invention.Based on the explanation herein, the technology of this field
Personnel can associate with other specific embodiments of the invention without creative labor, these modes are fallen within
Within protection scope of the present invention.
Claims (8)
1. a kind of ultrasound release type Micro-LED flood tide transfer method, which is characterized in that include the following steps,
A, transfer prepares, and transfer base substrate is horizontal positioned, the lower surface high resilience film of transfer base substrate, the adherency of Micro-LED chip
On the surface of elastic membrane, it is equipped with supersonic generation unit in the position for the upper surface for laying flat transfer base substrate, in the supersonic generation unit
Surface is equipped with ultrasonic transducer；
B, somewhere Micro-LED wafer alignment on selection alignment, supersonic generation unit and transfer base substrate passes through ultrasonic transducer reality
Now directly contact；
C, deformation discharges, and in certain specific positions, the elastic membrane at this is deformed for ultrasonication, in Micro-LED chip
The back side is arched upward, and so that chip is detached from transfer base substrate, is fallen in target substrate under the effect of gravity；
D, sustained release, after discharging transfer base substrate somewhere Micro-LED chip, supersonic generation unit is moved to next release position
It sets, the Micro-LED wafer alignment in this position discharges Micro-LED chip at this.
2. ultrasound release type Micro-LED flood tide transfer method according to claim 1, which is characterized in that the transfer
Substrate is laser-light transparent or nontransparent substrate, and the transfer base substrate is rigid substrates.
3. ultrasound release type Micro-LED flood tide transfer method according to claim 1, which is characterized in that the step A
In, the power of supersonic generation unit is 0.1~20W.
4. ultrasound release type Micro-LED flood tide transfer method according to claim 1, which is characterized in that the step A
In, the geometric dimension of supersonic generation unit is less than the geometric dimension of Micro-LED chip.
5. ultrasound release type Micro-LED flood tide transfer method according to claim 1, which is characterized in that the step A
In, the spacing of ultrasonic transducer is much larger than the spacing of Micro-LED chip on transfer base substrate on supersonic generation unit, after the former is
The positive integer times of person；
Ultrasonic transducer can realize that spacing changes by the way that mechanical structure is mobile on supersonic generation unit；
On supersonic generation unit in the spacing with target substrate of ultrasonic transducer Micro-LED chip installation site spacing phase
Deng.
6. ultrasound release type Micro-LED flood tide transfer method according to claim 1, which is characterized in that the step A
In, the quantity of the supersonic generation unit of effect is equal to or more than 1 simultaneously on same transfer base substrate.
7. ultrasound release type Micro-LED flood tide transfer method according to claim 1, which is characterized in that the step A
In, the geometric dimension of chip is 1~10 μm on transfer base substrate.
8. ultrasound release type Micro-LED flood tide transfer method according to claim 1, which is characterized in that the step A
In, the thickness of transfer base substrate should be less than or be equal to 5mm.
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| CN201811564324.2A CN109671651B (en) | 2018-12-20 | 2018-12-20 | A kind of ultrasound release type Micro-LED flood tide transfer method |
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| CN201811564324.2A CN109671651B (en) | 2018-12-20 | 2018-12-20 | A kind of ultrasound release type Micro-LED flood tide transfer method |
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| CN109671651B CN109671651B (en) | 2019-11-05 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111863690A (en) * | 2019-04-29 | 2020-10-30 | 云谷（固安）科技有限公司 | Batch transfer head and processing method thereof |
| CN112968108A (en) * | 2020-08-24 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | Transfer method of light-emitting structure |
| CN113345829A (en) * | 2021-06-07 | 2021-09-03 | 厦门乾照半导体科技有限公司 | Mass transfer method of micro light-emitting diode, display device and manufacturing method thereof |
| CN114823997A (en) * | 2022-05-26 | 2022-07-29 | 东莞市中麒光电技术有限公司 | Chip transfer method |
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| CN114823997A (en) * | 2022-05-26 | 2022-07-29 | 东莞市中麒光电技术有限公司 | Chip transfer method |
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Effective date of registration: 20231212 Address after: Room 377, 1/F, Block C, Building 24, Science and Technology Innovation Park, No. 1, Jintang Road, Tangjiawan Town, High tech Zone, Zhuhai City, Guangdong Province, 519000 (centralized office area) Patentee after: Maiwei Technology (Zhuhai) Co.,Ltd. Address before: 510006 No. 100 West Ring Road, University of Guangdong, Guangzhou Patentee before: GUANGDONG University OF TECHNOLOGY |