CN109254493A - Intermediate tone mask version production method - Google Patents
Intermediate tone mask version production method Download PDFInfo
- Publication number
- CN109254493A CN109254493A CN201811452002.9A CN201811452002A CN109254493A CN 109254493 A CN109254493 A CN 109254493A CN 201811452002 A CN201811452002 A CN 201811452002A CN 109254493 A CN109254493 A CN 109254493A
- Authority
- CN
- China
- Prior art keywords
- layer
- area
- complete
- semi
- light shield
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
The embodiment of the present invention provides a kind of intermediate tone mask version production method, comprising the following steps: provides motherboard, the motherboard includes substrate, semi-permeable layer, light transmission barrier layer, light shield layer and photoresist layer；Complete photosensitive area, part photosensitive area and non-photo-sensing area are formed in photoresist layer；It removes photosensitive photoresist and forms complete development zone and partial development area；Successively the light shield layer on the inside of the complete development zone of ablation, light transmission barrier layer and semi-permeable layer form transparent figure area；Secondary complete photosensitive area is formed using the remaining photoresist layer fully reacting on the inside of digestive juice and partial development area；It removes the reaction product in secondary complete photosensitive area and forms secondary complete development zone；Light shield layer on the inside of the secondary complete development zone of ablation forms semi-transparent graph area；Remove remaining photoresist layer.The embodiment of the present invention reacts to form secondary complete photosensitive area with digestive juice with the remaining photoresist layer on the inside of partial development area, can form semi-transparent graph area by development, etching again, be not necessarily to ashing furnace, at low cost.
Description
Technical field
The present embodiments relate to mask plate technical field more particularly to a kind of intermediate tone mask version production methods.
Background technique
Traditional TFT-LCD manufacturing technology generallys use intermediate tone mask version in array substrate manufacturing process to improve
Producing efficiency.Existing intermediate tone mask version production method includes top loaded type method, low-laying type method and dry ashing method, wherein
Dry ashing method is obtained and to semi-permeable layer, light transmission barrier layer, light shield layer and photoresist layer is formed from the inside to the outside in substrate surface
Motherboard successively carry out photoetching, development, etching, ashing furnace ashing, second etch and the technological operations such as remove photoresist and complete, due to needing
Ashing processing is carried out using ashing furnace, equipment is expensive, higher cost.
Summary of the invention
The technical problem to be solved by the embodiment of the invention is that a kind of intermediate tone mask version production method is provided, it can be low
The production intermediate tone mask version of cost.
In order to solve the above-mentioned technical problem, the embodiment of the present invention is the following technical schemes are provided: a kind of intermediate tone mask version system
Make method, comprising the following steps:
Motherboard is provided, the motherboard include substrate and the semi-permeable layer sequentially formed from the inside to the outside from one side surface of substrate,
Light transmission barrier layer, light shield layer and photoresist layer；
The motherboard is exposed, by adjusting control different zones exposure energy, photoresist layer formed complete photosensitive area,
Part photosensitive area and non-photo-sensing area；
Photosensitive photoresist in complete photosensitive area and part photosensitive area is removed using developer solution and respectively corresponds and have been formed
Full development zone and partial development area；
Light transmission figure is formed using light shield layer, light transmission barrier layer and the semi-permeable layer on the inside of complete development zone described in etching solution successively ablation
Shape area；
Secondary complete photosensitive area is formed using the remaining photoresist layer fully reacting on the inside of digestive juice and the partial development area；
Using the reaction product that developer solution removes the digested liquid of the secondary complete photosensitive area and photoresist formed it is secondary completely
Development zone；
Semi-transparent graph area is formed using the light shield layer on the inside of secondary complete development zone described in etching solution ablation；
Remaining photoresist layer is removed, the intermediate tone mask version finished product for having transparent figure area and semi-transparent graph area is obtained.
Further, the digestive juice is with oxidisability and the strong acid solution that reacts with photoresist.
Further, the light shield layer using on the inside of complete development zone described in etching solution successively ablation, light transmission barrier layer
Transparent figure area is formed with semi-permeable layer to specifically include:
Using the light shield layer on the inside of the first complete development zone of etching solution ablation only reacted with light shield layer；
Using the light transmission barrier layer on the inside of the second complete development zone of etching solution ablation only reacted with light transmission barrier layer；
Using the semi-permeable layer on the inside of the complete development zone of third etching solution ablation only reacted with semi-permeable layer.
Further, using the screening on the inside of secondary complete development zone described in the first etching solution ablation only reacted with light shield layer
Photosphere.
Further, when removing remaining photoresist layer, chemical reaction is passed through using the liquid parting that can be reacted with photoresist
Remove remaining photoresist layer.
After adopting the above technical scheme, the embodiment of the present invention at least has the following beneficial effects: that the embodiment of the present invention uses
Digestive juice reacts with the remaining photoresist layer on the inside of the partial development area and forms secondary complete photosensitive area, can be again by aobvious
The techniques such as shadow, etching remove the remaining photoresist layer of secondary complete photosensitive area inner surface and light shield layer forms semi-transparent graph area,
It does not need to effectively reduce manufacturing cost using ashing furnace with high costs.
Detailed description of the invention
Fig. 1 is the process blocks schematic diagram of intermediate tone mask version production method one embodiment of the present invention.
Fig. 2 is the step S4 detailed process block diagram of intermediate tone mask version production method one embodiment of the present invention.
Fig. 3 is the schematic cross-section of motherboard in intermediate tone mask version production method one embodiment of the present invention.
Fig. 4 is the schematic cross-section in intermediate tone mask version production method one embodiment of the present invention after the completion of step S2.
Fig. 5 is the schematic cross-section in intermediate tone mask version production method one embodiment of the present invention after the completion of step S3.
Fig. 6 is the schematic cross-section in intermediate tone mask version production method one embodiment of the present invention after the completion of step S4.
Fig. 7 is the schematic cross-section in intermediate tone mask version production method one embodiment of the present invention after the completion of step S5.
Fig. 8 is the schematic cross-section in intermediate tone mask version production method one embodiment of the present invention after the completion of step S6.
Fig. 9 is the schematic cross-section in intermediate tone mask version production method one embodiment of the present invention after the completion of step S7.
Figure 10 is the schematic cross-section in intermediate tone mask version production method one embodiment of the present invention after the completion of step S8.
Specific embodiment
The application is described in further detail in the following with reference to the drawings and specific embodiments.It should be appreciated that signal below
Property embodiment and explanation be only used to explain the present invention, it is not as a limitation of the invention, moreover, in the absence of conflict,
The features in the embodiments and the embodiments of the present application can be combined with each other.
As shown in Figures 1 to 10, the embodiment of the present invention provides a kind of intermediate tone mask version production method, including following step
It is rapid:
S1: providing motherboard 1, and the motherboard includes substrate 10 and sequentially forms from the inside to the outside from 10 1 side surface of substrate
Semi-permeable layer 11, light transmission barrier layer 21, light shield layer 31 and photoresist layer 41, as shown in Figure 3；
S2: being exposed the motherboard 1, by adjusting the exposure energy of control different zones, is formed completely in photoresist layer 41
Photosensitive area 51, part photosensitive area 53 and non-photo-sensing area 55, as shown in Figure 4；
S3: the photosensitive photoresist in complete photosensitive area 51 and part photosensitive area 53 is removed using developer solution and is respectively corresponded
Complete development zone 61 and partial development area 63 are formed, as shown in Figure 5；
S4: using light shield layer 31, light transmission barrier layer 21 and the semi-permeable layer of 61 inside of complete development zone described in etching solution successively ablation
11 form transparent figure area 71, as shown in Figure 6；
S5: secondary complete sense is formed using 41 fully reacting of remaining photoresist layer of 63 inside of digestive juice and the partial development area
Light area 81, as shown in Figure 7；
S6: it is formed using the reaction product that developer solution removes the digested liquid of the secondary complete photosensitive area 81 and photoresist secondary
Complete development zone 91, as shown in Figure 8；
S7: semi-transparent graph area 101 is formed using the light shield layer 31 of secondary complete 91 inside of development zone described in etching solution ablation, such as
Shown in Fig. 9；
S8: removing remaining photoresist layer 41, obtains the intermediate tone mask version for having transparent figure area 71 and semi-transparent graph area 101
Finished product, as shown in Figure 10.
In the specific implementation, the semi-permeable layer 11, light transmission barrier layer are formed using the method for physical sputtering or chemical deposition
21 and light shield layer 31.Photoresist is coated on 31 surface of light shield layer using Spin coating processes or Slit coating processes
Form photoresist layer 41.The above method, which can be obtained efficiently, is sequentially formed with photoresist layer 41, semi-permeable layer in 10 1 side surface of substrate
11, the substrate 10 of light transmission barrier 21 and light shield layer 31, improves the whole efficiency of production method.The substrate 10 be soda-lime glass,
Quartz glass or Pyrex are one such or other any transparent materials.The semi-permeable layer 11 includes as main member
Element Cr, Si, Mo, Ta, Ti and Al, and be in the essential element as composed by Cr, Si, Mo, Ta, Ti and Al at least two
Or more element mixing compound, or be also mixed at least one additives selected from Cox, Ox and Nx.It can be applied to this
The substrate 10 and 11 selection range of semi-permeable layer of inventive method are extensive, facilitate in actual production, according to various aspects factor, choose
11 material of most suitable substrate 10 and semi-permeable layer.
The embodiment of the present invention is reacted with the remaining photoresist layer 41 of 63 inside of partial development area using digestive juice and is formed
It is remaining can to remove secondary complete 81 inner surface of photosensitive area by techniques such as development, etchings again for secondary complete photosensitive area 81
Photoresist layer 41 and light shield layer 31 form semi-transparent graph area 101, do not need to effectively reduce system using ashing furnace with high costs
Cause this.
In one embodiment of the invention, the digestive juice be with oxidisability and the strong acid that is reacted with photoresist it is molten
Liquid.The embodiment of the present invention is adopted as 63 inside of strong acid solution and partial development area for having oxidisability and reacting with photoresist
Remaining photoresist layer 41 react, the acid that the strong oxidizing property of oxidisability strong acid solution to hang on the polymer in photoresist is not
Stable group falls off, and the falling off for acid-unstable group hung changes the polarity of polymer in photoresist, has enough
Pendent group fall off after, so that the photoresist of the inside of partial development area 63 is formed the secondary complete photosensitive area that can be dissolved in developer solution
81, the photoresist of 63 remaining inside of partial development area can be effectively removed.In the specific implementation, there is oxidisability and volatile
Strong acid solution can be concentrated nitric acid solution, hydrofluoric acid or perchloric acid solution etc., the embodiment of the present invention, using concentrated nitric acid solution.
As shown in Fig. 2, in one embodiment of the invention, step S4 is specifically included:
S41: using the light shield layer on the inside of the first complete development zone of etching solution ablation only reacted with light shield layer；
S42: using the light transmission barrier layer on the inside of the second complete development zone of etching solution ablation only reacted with light transmission barrier layer；
S43: using the semi-permeable layer on the inside of the complete development zone of third etching solution ablation only reacted with semi-permeable layer.
The embodiment of the present invention has successively been corresponded to using the first etching solution, the second etching solution and third etching solution ablation respectively
Light shield layer 31, light transmission barrier layer 21 and the semi-permeable layer 11 of complete 61 inside of development zone, due to 21 He of light shield layer 31 and light transmission barrier layer
The difference of 11 material of semi-permeable layer, fails when avoiding etching, improves producing efficiency.
In one embodiment of the invention, using secondary complete described in the first etching solution ablation only reacted with light shield layer 31
The light shield layer of complete 91 inside of development zone.The embodiment of the present invention is corresponded to using the first etching solution ablation only reacted with light shield layer 31
The light shield layer 31 of second complete photosensitive area 81, due to the difference of 21 material of light shield layer 31 and light transmission barrier layer, when avoiding etching
Fail, improves producing efficiency.
In one embodiment of the invention, de- using what can be reacted with photoresist when removing remaining photoresist layer 41
Film liquid removes remaining photoresist layer 41 by chemical reaction.The embodiment of the present invention is by using the demoulding that can be reacted with photoresist
Liquid removes removing photoresistance layer 41 by chemical reaction, is efficiently removed remaining photoresist layer 41, obtains final intermediate tone mask version
Finished product improves producing efficiency.
The embodiment of the present invention is described with above attached drawing, but the invention is not limited to above-mentioned specific
Embodiment, the above mentioned embodiment is only schematical, rather than restrictive, those skilled in the art
Under the inspiration of the present invention, without breaking away from the scope protected by the purposes and claims of the present invention, it can also make very much
Form, within these are all belonged to the scope of protection of the present invention.
Claims (5)
1. a kind of intermediate tone mask version production method, which comprises the following steps:
Motherboard is provided, the motherboard include substrate and the semi-permeable layer sequentially formed from the inside to the outside from one side surface of substrate,
Light transmission barrier layer, light shield layer and photoresist layer；
The motherboard is exposed, by adjusting control different zones exposure energy, photoresist layer formed complete photosensitive area,
Part photosensitive area and non-photo-sensing area；
Photosensitive photoresist in complete photosensitive area and part photosensitive area is removed using developer solution and respectively corresponds and have been formed
Full development zone and partial development area；
Light transmission figure is formed using light shield layer, light transmission barrier layer and the semi-permeable layer on the inside of complete development zone described in etching solution successively ablation
Shape area；
Secondary complete photosensitive area is formed using the remaining photoresist layer fully reacting on the inside of digestive juice and the partial development area；
Using the reaction product that developer solution removes the digested liquid of the secondary complete photosensitive area and photoresist formed it is secondary completely
Development zone；
Semi-transparent graph area is formed using the light shield layer on the inside of secondary complete development zone described in etching solution ablation；
Remaining photoresist layer is removed, the intermediate tone mask version finished product for having transparent figure area and semi-transparent graph area is obtained.
2. intermediate tone mask version production method as described in claim 1, which is characterized in that the digestive juice is with oxidisability
And the strong acid solution reacted with photoresist.
3. intermediate tone mask version production method as described in claim 1, which is characterized in that described to use etching solution successively ablation
Light shield layer, light transmission barrier layer and semi-permeable layer on the inside of the complete development zone form transparent figure area and specifically include:
Using the light shield layer on the inside of the first complete development zone of etching solution ablation only reacted with light shield layer；
Using the light transmission barrier layer on the inside of the second complete development zone of etching solution ablation only reacted with light transmission barrier layer；
Using the semi-permeable layer on the inside of the complete development zone of third etching solution ablation only reacted with semi-permeable layer.
4. intermediate tone mask version production method as described in claim 1, which is characterized in that using the only reacted with light shield layer
Light shield layer on the inside of secondary complete development zone described in one etching solution ablation.
5. intermediate tone mask version production method as described in claim 1, which is characterized in that when removing remaining photoresist layer, adopt
Remaining photoresist layer is removed by chemical reaction with the liquid parting that can be reacted with photoresist.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811452002.9A CN109254493A (en) | 2018-11-30 | 2018-11-30 | Intermediate tone mask version production method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811452002.9A CN109254493A (en) | 2018-11-30 | 2018-11-30 | Intermediate tone mask version production method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109254493A true CN109254493A (en) | 2019-01-22 |
Family
ID=65042367
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811452002.9A Pending CN109254493A (en) | 2018-11-30 | 2018-11-30 | Intermediate tone mask version production method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109254493A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109634051A (en) * | 2018-12-14 | 2019-04-16 | 深圳市路维光电股份有限公司 | Intermediate tone mask version wet ashing production method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1630034A (en) * | 2003-09-30 | 2005-06-22 | 株式会社东芝 | Method for forming resist pattern and method for manufacturing semiconductor device |
| US20090176325A1 (en) * | 2008-01-03 | 2009-07-09 | Woo-Seok Jeon | Halftone mask, method of manufacturing the same, and method of manufacturing an array substrate using the same |
| CN101842744A (en) * | 2007-11-01 | 2010-09-22 | 爱发科成膜株式会社 | Half-tone mask, half-tone mask blank and method for manufacturing half-tone mask |
| CN203337997U (en) * | 2013-07-19 | 2013-12-11 | 京东方科技集团股份有限公司 | Gray scale mask plate |
| CN108196421A (en) * | 2017-12-14 | 2018-06-22 | 深圳市路维光电股份有限公司 | Gray level mask plate production method |
-
2018
- 2018-11-30 CN CN201811452002.9A patent/CN109254493A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1630034A (en) * | 2003-09-30 | 2005-06-22 | 株式会社东芝 | Method for forming resist pattern and method for manufacturing semiconductor device |
| CN101842744A (en) * | 2007-11-01 | 2010-09-22 | 爱发科成膜株式会社 | Half-tone mask, half-tone mask blank and method for manufacturing half-tone mask |
| US20090176325A1 (en) * | 2008-01-03 | 2009-07-09 | Woo-Seok Jeon | Halftone mask, method of manufacturing the same, and method of manufacturing an array substrate using the same |
| CN203337997U (en) * | 2013-07-19 | 2013-12-11 | 京东方科技集团股份有限公司 | Gray scale mask plate |
| CN108196421A (en) * | 2017-12-14 | 2018-06-22 | 深圳市路维光电股份有限公司 | Gray level mask plate production method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109634051A (en) * | 2018-12-14 | 2019-04-16 | 深圳市路维光电股份有限公司 | Intermediate tone mask version wet ashing production method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6511793B1 (en) | Method of manufacturing microstructure using photosensitive glass substrate | |
| CN102122113A (en) | Photoetching method | |
| JP2008122964A (en) | Method of forming identification mark for display substrate, and display device using the same | |
| CN104503203A (en) | Mask plate and production method thereof and display panel frame sealing adhesive curing method | |
| CN104199209A (en) | Mask plate, manufacturing method thereof and manufacturing method of target graph | |
| CN102608860B (en) | Lithographic methods, reticle combination and exposure system | |
| CN109254493A (en) | Intermediate tone mask version production method | |
| JP2010067728A (en) | Method for forming thin film pattern | |
| CN101442028B (en) | Method for manufacturing planar display | |
| JPH0346316A (en) | Formation of resist pattern | |
| US9977324B2 (en) | Phase shift mask and method of forming patterns using the same | |
| CN101510510A (en) | Pattern forming method, semiconductor device manufacturing method and semiconductor device manufacturing apparatus | |
| CN105161454A (en) | Array substrate and manufacturing method thereof, display apparatus | |
| CN101900947B (en) | Method for forming exposure pattern | |
| JP2017523611A (en) | Method for manufacturing coplanar oxide semiconductor TFT substrate | |
| KR101467633B1 (en) | Photo Film Mask including DLC pattern and Manufacturing method thereof | |
| KR101157148B1 (en) | Method of Fabricating Semiconductor Device | |
| JPS649617B2 (en) | ||
| CN109634051A (en) | Intermediate tone mask version wet ashing production method | |
| CN107797396B (en) | Method for manufacturing alignment mark of conductive film | |
| JPS6218560A (en) | Photomask blank and photomask | |
| CN103199016A (en) | Process method for preventing occurrence of defects of photoresist in wet etching | |
| CN104407503B (en) | Exposure method and method for manufacturing semiconductor device | |
| CN108231796B (en) | Array substrate, manufacturing method thereof and display device | |
| JP6638493B2 (en) | Method of manufacturing template having multi-stage structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190122 |
|
| RJ01 | Rejection of invention patent application after publication |