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CN108369935A - 具有薄的焊料阻止层的电元器件和用于制造的方法 - Google Patents

具有薄的焊料阻止层的电元器件和用于制造的方法 Download PDF

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Publication number
CN108369935A
CN108369935A CN201680062169.7A CN201680062169A CN108369935A CN 108369935 A CN108369935 A CN 108369935A CN 201680062169 A CN201680062169 A CN 201680062169A CN 108369935 A CN108369935 A CN 108369935A
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CN
China
Prior art keywords
trapping layer
upside
carrier
component
solder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201680062169.7A
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English (en)
Inventor
亚历山大·施马朱
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nujira Ltd
SnapTrack Inc
Original Assignee
Nujira Ltd
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Filing date
Publication date
Application filed by Nujira Ltd filed Critical Nujira Ltd
Publication of CN108369935A publication Critical patent/CN108369935A/zh
Pending legal-status Critical Current

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Abstract

本发明涉及一种电气模块(EB)以及用于制备电气模块(EB)的方法。所述模块(EB)具有基底(TR)，所述基底具有布置在其上的上层(O)和金属接触表面(MK)以及覆盖所述上侧(O)的一部分但不覆盖所述接触表面(MK)的阻焊层(LSS)。所述模块(EB)还包括电气部件(EK)，所述电气部件具有位于所述下侧上的接触表面(KF)和连接所述两个接触表面(MK,KF)的焊料凸块连接(BU)。所述阻焊层(O)具有200nm的最大厚度并且从而简化了用于通过模具模块(MM)封装所述模块(EB)的后续方法步骤。

Description

具有薄的焊料阻止层的电元器件和用于制造的方法
本发明涉及电元器件，例如适用于表面安装(SMT＝表面贴装技术)的元器件或带有以SMT技术装配的电构件的元器件以及用于制造的方法。
在现代的SMT技术中可焊接的凸点被用于在载体例如电路板和电构件例如分立的部件或模块之间的电连结和机械连接。凸点的材料在一个步骤中例如借助于模版印刷方法(stencil printing)施加且接着被加热(回流过程)。常见的可焊接的材料如例如焊膏能够包含助熔剂，该助熔剂在加热时侵蚀载体的表面。此外存在危险：焊膏到达这样的可焊接的表面处，即该表面应保持没有焊料，以例如为了避免电短路。
为了避免该危险，可以通过保护层例如焊料阻止层遮盖表面的敏感区域。
在使用焊料阻止层时的问题是在制造元器件时的耗费增加，因为焊料阻止层必须如此结构化，即使得在最佳情况中所有敏感区域，但是不是实际上应设有焊料的区域通过保护层遮盖。此外适用的是，电元器件应具有变得越来越小的尺寸。传统的焊料阻止层与凸点连接部的当前的尺寸相比较已经如此厚，使得在另外的用于封装元器件的步骤中能够出现其他问题。通过上侧浇注有模制物质且物质接着硬化，许多元器件被封装且机械上稳定。现在问题是，在以下情况下模制物质不再足够可靠地填充在构件和载体之间的中间空间，即当该中间空间由于焊料阻止层的厚度而过低时。
因此存在这样的任务，即给出一种电元器件，在其中焊料只润湿期望的区域且如有可能在加热之后形成球体或者半球体，而不扩散到处于接触面附近的区域上。保护层应在此具有在载体的表面上的良好的附着性、在回流过程中经受高的温度例如大于250℃而不降解、在机械方面稳定、在化学方面中性且钝态的并且不引导电流。尤其为了稍后待分布的模制物质尽可能还填充中间空间，保护层应尽可能薄。此外存在对于用于制造这样的元器件的方法的期望。
这些期望相应于根据独立权利要求所述的电元器件和用于制造电元器件的方法。从属权利要求给出了有利的构造方案。
电元器件包括带有上侧的载体、在上侧上的金属接触面和焊料阻止层，该焊料阻止层遮盖上侧的一部分，但不遮盖接触面。焊料阻止层具有200nm或更小的厚度。
由此焊料阻止层具有这样的厚度，即对于该厚度而言即使在凸点连接件当前小的尺寸和由此在载体和电部件之间的小的间距的情形下也还能够可靠地填充中间空间。
载体能够在此为电路板或芯片。金属接触面优选为可焊接的金属面，该金属面设置成通过凸点连接件电连结。金属接触面能够在此尤其为所谓的凸点下金属化物且继而具有多层的结构。
可行的是，焊料阻止层具有介于30nm和80nm之间的厚度。
此外可行的是，元器件在金属接触面上具有凸点球体。
在金属接触面上的凸点球体则能够由焊料材料制成，该焊料材料通过模版印刷方法施加到金属接触面的区域上。在接着加热时材料熔化且由于表面张力形成带有相对小的表面的形状即球体。金属接触面能够与在载体的上侧上的另外的金属化物例如以带状线路形式的信号线路连接。除了该金属化物之外还能够在载体的上侧上布置另外的金属化物。优选两个另外的金属化物在处于载体的上侧上的接触面附近通过焊料阻止层遮盖。焊料阻止层能够具有由焊料较差润湿的润湿性。那么焊料材料在加热时自主地远离较差润湿性的区域朝向金属接触面集中，该金属接触面不具有焊料阻止层的材料。
焊料材料和/或其助熔剂在此不侵蚀在载体的上侧上的敏感区域。即使当可导电的焊料材料保持在接触面附近的区域上时，焊料阻止层也作为电绝缘体起作用且信号线路不短路。
此外可行的是，元器件附加地包括电构件。电构件能够在下侧处具有接触面。元器件那么此外包括凸点连接件，该凸点连接件连接两个接触面。
载体和电构件例如分立的部件或模块通过凸点连接件导电地相互连结和机械连接。
载体当然能够在其上表面上具有多个另外的金属接触面。元器件此外能够具有多个不同的电构件，这些电构件通过凸点连接件与载体的金属接触面连接和连结，其中电构件中的每个继而在其下侧处具有金属接触面。
所述一个电构件或多个电构件能够在其下侧处同样分别具有焊料阻止层。电构件的焊料阻止层能够在此是传统的保护层。电构件的焊料阻止层也能够是当前的保护层类型的焊料阻止层。
尤其当两个保护层布置在构件和载体之间时，当前保护层的小的厚度的优点起作用，因为对于自由中间空间的高度的效果加倍。
相应地可行的是，元器件包括模制物质，该模制物质遮盖载体的上侧的至少部分且遮盖至少一个电构件。
尤其有利的是，模制物质还填充在电构件和载体之间或者在所有电构件和载体之间的中间空间。
如果在载体的上侧处或在电构件的下侧处应布置敏感的元器件结构，例如MEMS元器件结构如SAW结构(SAW＝Surface Acoustic Wave＝声表面波)、BAW结构(BAW＝BulkAcoustic Wave＝声体积波)等等，则优选的是，在构件和载体之间的密封封闭的体积保持不具有模制物质的材料。为此能够在构件和载体之间布置有附加的框架结构，该框架结构侧向包围空腔。空腔那么通过载体和构件的表面且通过框架形成。
可行的是，元器件在载体的上侧处包括与接触面连结的第一信号线路。元器件此外在载体的上侧处具有第二信号线路。两个信号线路至少部分地由焊料阻止层遮盖。在两个信号线路之间的电阻为100MΩ或更大。
在信号线路之间的侧向间距能够在此为180μm的数量级。焊料阻止层具有厚度，该厚度取决于层的材料如此选择，即使得确保100MΩ的最小电阻。
可行的是，焊料阻止层包括硅作为主要组成部分或完全由硅制成。
已发现，当使用继续在下文描述的方法时，如此薄的焊料阻止层能够由硅或带有相似电绝缘性能的其他材料令人吃惊地简单地制造。原则上能够对于焊料阻止层使用所有材料，这些材料具有通过焊料足够小润湿的润湿性和足够小的导电性。在此优选的是，这些材料能够利用例如半导体工业的常见的加工方法沉积且良好地附着在载体的上侧上。
焊料阻止层还能够橡胶作为主要组成部分或由橡胶制成。
焊料阻止层能够原则上由所有介电材料制成。但是优选可相对简单地作为相应薄的层沉积的焊料阻止层。尤其这样的材料属于此，即这些材料可以反应性或非反应性PVD方法施加在表面上，例如硅、钛、铝或铬的氧化物和氮化物。
可行的是，元器件在载体的上侧上或在至少一个电构件的下侧处具有元器件结构。元器件结构能够具有40μm或更大的高度。元器件结构能够为SAW元器件结构、BAW元器件结构、MEMS元器件结构(MEMS＝微机电系统，Micro-Electro-Mechanical System)或GBAW元器件结构(GBAW＝Guided Bulk Acoustic Wave＝导向声体积波)或类似的元器件结构。由此载体在其上侧处或者电构件在其下侧处具有复杂的布局，该复杂的布局能够通过常见的焊料阻止层较差地遮盖或者甚至不能够被遮盖。
应通过焊料组织层保护的另外的可焊接的金属表面能够具有镍、铜、这两个元素的合金或带有这两个元素的合金、金、银、钯、铑、锡、和/或锌。
接触面、电构件和电构件的接触面的数量原则上不限制，特别在带有集成电路的电构件的情形下电构件和载体能够通过数百个凸点连接件电连结和连接。
载体不限制于电路板。载体本身能够又为电构件，该电构件布置在另外的载体或另外的电构件等等之上且电连结。
用于制造这样的电元器件的方法包括步骤：
-提供带有上侧的载体和在上侧上的金属接触面，
-将漆层布置在上侧上且如此使漆层结构化，即使得漆层的材料保持在接触面上且表面的不带有接触面的区域不具有漆层的材料，
-将焊料阻止层沉积到载体的上侧上，
-移除漆层的剩余的材料连同焊料阻止层在接触面上的材料。
漆层能够在此包括对于光刻过程常见的材料且例如通过旋涂施加。在将焊料阻止层的材料施加到结构化的漆层的保留的区域上且施加到载体的变得自由的表面上之后光刻胶的材料能够通过剥离去除。由此在没有焊料阻止层的材料的附加的结构化的情况下产生以期望的焊料阻止掩模的形式的结构化的焊料阻止层。该方法相比于传统的方法减小了整个过程的复杂性且减少了在制造元器件时的成本。
可行的是，焊料阻止层获得200nm或更小的厚度。
尤其可行的是，焊料阻止层获得介于20nm和80nm之间的厚度。
可行的是，在该方法期间形成的焊料阻止层包括硅或锗作为主要组成部分或完全由硅或锗制成。
带有类似的电性能和类似的润湿性的其他材料同样是可行的。
可行的是，电元器件在上侧上具有另外的可焊接的金属表面且焊料阻止层直接沉积到另外的可焊接的金属表面上。
另外的可焊接的金属表面能够在此为信号线路的金属表面或在载体的上侧处实现的电容元件、感应元件或电阻元件的金属表面。
可行的是，焊料阻止层的材料借助于PVD(PVD＝Physical Vapor Deposition＝物理气相沉积)或借助于CVD(CVD＝Chemical Vapor Deposition＝化学气相沉积)施加。
此外可行的是，该方法包括步骤：将焊膏至少布置到接触面上，将电构件(该电构件在其下侧处带有接触面)布置在载体的上侧上，回流焊接元器件并且借助于凸点连接件连接两个接触面。
此外可行的是，该方法包括步骤：利用模制物质包围电构件。在此模制物质还填充在构件和载体之间的区域。
漆(该漆在焊料阻止层的材料施加之前结构化以为了获得焊料阻止掩膜)能够具有介于0.5μm和10μm之间，例如介于2μm和4μm之间的厚度且是半导体制造的标准漆。漆在此除了旋涂之外还能够喷涂到载体的上侧上。
作为元器件或者用于制造的方法的基础的重要的思想、作用原理和示意性示例在图中绘出。
其中：
图1显示了穿过电元器件的横截面，
图2显示了穿过带有另外的封装件的元器件的横截面，
图3显示了穿过带有接触面上的凸点球体的元器件的横截面，
图4显示了在制造元器件时的第一中间步骤，
图5显示了第二中间步骤，
图6显示了第三中间步骤，
图7显示了第四中间步骤，
图8显示了在制造复杂的电元器件时的第一中间结果，
图9显示了另一中间步骤，
图10显示了在加热之后的另一中间步骤，
图11显示了穿过元器件的一种简单的实施方式的横截面，
图12显示了穿过备选的实施方式的横截面，
图13显示了穿过带有薄的焊料阻止层和模制物质的元器件的横截面，该模制物质填充电构件和载体之间的中间空间。
图1显示了穿过电元器件EB的一种简单的实施方式的横截面。电元器件EB具有载体TR，金属接触面MK在该载体上结构化。金属接触面MK设置成，通过凸点连接件与电构件连结。在载体TR的上侧O上布置有焊料阻止层LSS，该焊料阻止层遮盖载体TR的上侧的不应直接与焊料材料接触的区域。
金属接触面能够在此为所谓的凸点下金属化UBM且具有可良好润湿的表面。
图2显示了穿过带有相对厚的焊料阻止层LSS的电元器件的形式的横截面。如果载体TR的上侧足够平坦，焊料阻止层LSS可靠地保护在载体TR的上侧上的敏感区域免于因焊料而润湿。当元器件应通过模制物质MM封装时，但是厚的焊料阻止层LSS表现出阻碍，实现填满在电构件Ek的下侧(该电构件通过凸点连接件BU与载体TR连接和电连结)和载体TR之间的中间空间Z。
图3显示了穿过电元器件的横截面，在该电元器件中凸点球体BU已经形成在接触面MK上。由于焊料的表面张力，在经历回流过程时形成类似球体的构型。相对于凸点球体或者稍后的针对电构件的凸点连接件的高度，焊料阻止层LSS的厚度非常小。
在载体的表面上布置有带有可焊接的表面LO的材料，例如信号线路SL，该材料能够包括镍、铜、金或银。在没有焊料阻止层LSS的情况下存在危险：凸点球体BU的材料不是聚集在接触面MK上，而是侵蚀信号导体且如有可能使信号导体和在载体的上侧处的另外的电路元件短路。
图4显示了穿过在制造电元器件时的第一中间产品的横截面。在载体TR上布置有接触面MK和作为用于在载体TR的上侧处的待保护的元件的示例的信号导体SL。
图5显示了穿过另一中间步骤的横截面，在该另一中间步骤的情形下整个表面包括待保护的区域和稍后待由焊料润湿的区域在内由光刻胶FL遮盖。
图6显示了穿过另一中间步骤的横截面，在该另一中间步骤的情形下光刻胶FL如此结构化，即使得仅仅稍后应保持不具有焊料阻止层的材料的区域MK保持由光刻胶FL的材料遮盖。
此外可行的是，选择性地曝光和显影光刻胶。
图7显示了另一中间步骤的结果，在该另一中间步骤的情形下到现在为止的电元器件的整个上侧通过稍后的焊料阻止层LSS的材料遮盖。敏感区域直接通过焊料阻止层LSS的材料遮盖。在稍后应布置焊料的地方，在焊料阻止层LSS的材料和接触面之间存在光刻胶FL的保留的剩余物。
图8相应地显示了另一方法步骤的结果，在该另一方法步骤的情形下光刻胶FL的保留的剩余物与焊料阻止层LSS的材料的沉积在其上的区段一起被去除，从而待润湿的表面露出而未由焊料阻止层遮盖。
图9显示了另一步骤的结果，即在基本上相应于接触面MK的区域的区域上施加焊膏LP。只要接触面MK的主要区域由焊膏LP遮盖着，由于焊料阻止层LSS的可精确限定的边缘在施加焊膏LP时侧向的定位精度无需太高。
图10显示了在制造电元器件时另一中间步骤的结果，在该另一中间步骤的情形下焊膏LP的材料在加热之后已经在接触面MK的部位处浓缩成球体。
图11显示了穿过电元器件的横截面，在该电元器件中在电构件EK的下侧处的接触面MK和在载体TR的上侧处的接触面MK通过凸点连接件连接，该凸点连接件来自于图10的凸点球体。
图12显示了通过另一实施方式的横截面，在该另一实施方式中电构件EK和载体TR通过多个凸点连接件BU电连结和连接。除了在载体TR的上侧处的焊料阻止层LSS之外，附加地能够在电构件EK的下侧处布置有优选同样薄的焊料阻止层LSS。
图13最后显示了穿过封装的电元器件的横截面，在该封装的电元器件中模制物质MM在载体TR的上侧处包围电构件EK且填充电构件EK和载体TR之间的中间空间Z。
参考标号列表
BU： 凸点连接
EB： 电元器件
EK： 电构件
FL： 光刻胶
KF： 接触面
LO： 可焊接的表面
LP： 焊膏
LSS： 焊料阻止层
MK： 金属接触面
MM： 模制物质
O： 载体的上侧
SL： 信号线路
TR： 载体
UBM： 凸点下金属化
Z： 中间空间

Claims (17)

1.一种电元器件(EB)，其包括
-带有上侧(O)的载体(TR)，
-在所述上侧(O)上的金属接触面(MK)，
-焊料阻止层(LSS)，该焊料阻止层遮盖所述上侧(O)的一部分但是不遮盖接触面(MF)，
其中
-所述焊料阻止层(LSS)具有200nm或更小的厚度。
2.根据上述权利要求所述的元器件，其中所述焊料阻止层(LSS)具有介于30nm和80nm之间的厚度。
3.根据上述权利要求所述的元器件，此外其包括在所述金属接触面(MK)上的凸点球体(BU)。
4.根据上述权利要求中任一项所述的元器件，此外其包括带有在下侧处的接触面(KF)的电构件(EK)和凸点连接件(BU)，该凸点连接件连接两个接触面(MK，KF)。
5.根据上述权利要求所述的元器件，此外其包括模制物质(MM)，该模制物质遮盖所述载体(TR)的上侧的至少部分和所述电构件(EK)。
6.根据上述权利要求所述的元器件，其中所述模制物质(MM)还填充在所述电构件(EK)和所述载体(TR)之间的中间空间(Z)。
7.根据上述权利要求中任一项所述的元器件，其还包含：
-在所述载体(TR)的上侧(O)处的与所述接触面(MK)连结的第一信号线路(SL)，
-在所述载体(TR)的上侧(O)处的第二信号线路(SL)，其中
-两个信号线路(SL)至少部分地由所述焊料阻止层(LSS)遮盖并且
-在两个信号线路(SL)之间的电阻为100MΩ或更大。
8.根据上述权利要求中任一项所述的元器件，其中所述焊料阻止层(LSS)包括硅作为主要组成部分或由硅制成。
9.根据上述权利要求中任一项所述的元器件，其中在所述载体(TR)的上侧(O)上布置有元器件结构，这些元器件结构具有40μm或更大的高度。
10.一种用于制造电元器件(EB)的方法，其包括步骤
-提供带有上侧(O)的载体(TR)和在所述上侧(O)上的金属接触面(MK)，
-将漆层(FL)布置在所述上侧(O)上且如此使所述漆层(FL)结构化，即使得所述漆层(FL)的材料保持在所述接触面(MK)上且表面(O)的不带有接触面(Mk)的区域不具有所述漆层(FL)的材料，
-将焊料阻止层(LSS)沉积到所述载体(TR)的上侧(O)上，
-移除所述漆层(FL)的剩余的材料连同所述焊料阻止层(LSS)在所述接触面(MK)上的材料。
11.根据上述权利要求所述的方法，其中所述焊料阻止层(LSS)包含200nm或更小的厚度。
12.根据上述权利要求所述的方法，其中所述焊料阻止层(LSS)包含介于20nm和80nm之间的厚度。
13.根据上述三个权利要求中任一项所述的方法，其中所述焊料阻止层(LSS)包括硅作为主要组成部分或由硅制成。
14.根据上述四个权利要求中任一项所述的方法，其中所述电元器件(EB)在所述上侧上具有另外的可焊接的金属表面(LO)且所述焊料阻止层(LSS)直接沉积到所述另外的可焊接的金属表面(LO)上。
15.根据上述五个权利要求中任一项所述的方法，其中所述焊料阻止层(LSS)借助于PVD或CVD施加。
16.根据上述五个权利要求中任一项所述的方法，此外其包括步骤
-将焊膏(LP)至少布置到所述接触面(MK)上，
-将电构件(EK)布置在所述载体(TR)的上侧(O)上，该电构件(EK)带有在其下侧处的接触面(MK，KF)，
-回流焊接所述元器件(EB)且借助于凸点连接件(BU)连接两个接触面(MK，KF)。
17.根据上述权利要求所述的方法，此外其包括步骤
-利用模制物质(MM)包围所述电构件(EK)，
其中
-所述模制物质(MM)还填充在所述构件(EK)和所述载体(TR)之间的区域。
CN201680062169.7A 2015-11-27 2016-09-06 具有薄的焊料阻止层的电元器件和用于制造的方法 Pending CN108369935A (zh)

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