CN107790894B - A kind of laser cutting system and method - Google Patents
A kind of laser cutting system and method Download PDFInfo
- Publication number
- CN107790894B CN107790894B CN201610769563.6A CN201610769563A CN107790894B CN 107790894 B CN107790894 B CN 107790894B CN 201610769563 A CN201610769563 A CN 201610769563A CN 107790894 B CN107790894 B CN 107790894B
- Authority
- CN
- China
- Prior art keywords
- laser
- wafer
- hot spot
- horizontal direction
- cutting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
- B23K26/046—Automatically focusing the laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
- B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
Abstract
The present invention relates to a kind of laser cutting system and methods, which includes: laser, for providing laser；Beam shaping focus module expands and is formed hot spot for laser, and the hot spot is focused on crystal column surface；Longitudinal P ZT drive control platform, for driving the wafer or the beam shaping focus module to do longitudinal simple harmonic motion；And horizontal direction work stage, for driving the wafer to do horizontal direction movement.While the present invention realizes wafer horizontal direction high speed dynamic scan using horizontal direction work stage, keep the focal depth position of hot spot vertically extending using longitudinal P ZT drive control platform, middle focal position is in vertical not changed static depth of focus extension method compared with the existing technology, the present invention substantially increases laser cutting efficiency on the basis of not increasing mechanism complexity.
Description
Technical field
The present invention relates to field of semiconductor processing, in particular to a kind of laser cutting system and side for wafer cutting
Method.
Background technique
In field of semiconductor processing, semiconductor devices usually on wafer batch micro operations complete, wafer after processing is completed,
It needs the device isolation on wafer into chip one by one.Currently, the cutting mode of wafer has traditional mechanical cutting
(such as crusher), the modes such as ion etching and laser cutting.
Wherein, the Cutting Road of crusher cutting is wider, easily causes chipping and crackle when cutting thin wafer.In addition, work
The material of low-k (low-k), the ductility having due to these materials and lower are more and more used in skill processing procedure
Adhesiveness so that cutting when it is extremely difficult, be easy to cause crackle and the layering of cutting region, while blade can be wrapped up again and caused
Breaking, so the applicability of crusher cutting is worse and worse.
And the higher cost of ion etching, and process is more complicated, needs that the material on surface layer is first scratched exposing substrate, so
Deep etching is carried out with ion afterwards.
For laser cutting, with the continuous promotion of laser technique, is also more studied and applied gradually.Laser
Cutting is to focus the laser beam into wafer material surface or inside, and material absorbs photon and passes through a series of variations, is finally made
Obtain material removal or modified.But the laser of long pulse width and short pulse or ultra-short pulse width, the two mechanism of action are different.
Long pulse width be cut by laser when, material mainly absorb photon energy and by by way of melting and gasifying on material shape
Certain heat affected area (HAZ, Heat affected zone) is generated at Cutting Road, and in Cutting Road two sides；And short pulse or
When ultra-short pulse laser is cut, within the pulse duration, material can not gather enough heats so that melting, instead because short
The high-peak power of pulse or ultra-short pulse laser, make material generate plasma, plasma accumulation to a certain extent when with
The form of " coulomb explosion " takes away material, or according to the Multiphoton Absorbtion mechanism of action so that material manage in internal generation or
Chemical structure modification generates slight void.Due in short pulse or ultra-short pulse laser mechanism, the fuel factor of generation compared with
It is few, also often it is referred to as " cold working ".
Either Long Pulse LASER cutting or short pulse or ultra-short pulse laser cutting, in cutting process, in face of thickness
Degree for several hundred microns wafer or millimeter magnitude other baseplate materials when, because depth of focus limitation there are depth of cut it is insufficient lack
Point.There are mainly two types of existing laser cutting depth of focus extension methods: first method is as shown in Figure 1a, firstly, amasthenic lens 2 is sent out
Laser beam 3 out, the focus of the laser beam 3 are located at a certain depth of baseplate material 1, and then Substrate table horizontally scans completion and cuts
After cutting, focus is adjusted to second position (dotted portion in Fig. 1 a), and continuation horizontally scans, and is that one kind is gradually adjusted along longitudinal direction
Burnt method；Second method is as shown in Figure 1 b, and multiple amasthenic lens 2,4 are arranged above baseplate material 1, issue laser beam respectively
3,5, the focal adjustments of the two are fixed on the different depth of baseplate material 1, then are horizontally scanned.Both the above method
It can be summarized as static depth of focus extension method, i.e., for baseplate material when horizontal direction scans, focal position is constant, and depth of focus does not prolong
It stretches.Perhaps efficiency is lower or structure is many and diverse for the method that this static state depth of focus extends.
Summary of the invention
The present invention provides a kind of laser cutting system and method, to solve the above technical problems.
In order to solve the above technical problems, the present invention provides a kind of laser cutting system, comprising:
Laser, for providing laser；
Beam shaping focus module expands and is formed hot spot for laser, and the hot spot is focused on crystal column surface；
Zigzag tread patterns console, for driving the wafer or the beam shaping focus module to do longitudinal simple harmonic motion；
And
Horizontal direction work stage, for driving the wafer to do horizontal direction movement.
Preferably, the zigzag tread patterns console is longitudinal P ZT drive control platform, it is fixed on the beam shaping focus module
On, or be fixed in the horizontal direction work stage.
Preferably, the hot spot that the beam shaping focus module is formed is single-spot, lateral multifocal beam array
Or strip hot spot.
Preferably, the periphery of the wafer is equipped with cricoid auxiliary cutting material.
Preferably, the thickness of the auxiliary cutting material is identical as the thickness of the wafer, the auxiliary cutting material is along level
To length it is identical as the length of the hot spot horizontally.
The present invention also provides a kind of laser cutting methods, emit laser using a laser, the laser is whole through light beam
Shape focus module forms hot spot after being expanded, the hot spot focuses on crystal column surface, and the wafer or the beam shaping are poly-
Burnt module does longitudinal simple harmonic motion, and the wafer does horizontal direction movement, the horizontal direction movement and longitudinal simple harmonic quantity fortune simultaneously
Dynamic combination forms oblique movement, forms triangular waveform of the laser in the wafer and scans track.
Preferably, the hot spot, within the time of longitudinal round trip, the hot spot is less than in the distance that horizontal direction moves
Equal to the length of the hot spot horizontally.
Preferably, the periphery of the wafer is equipped with cricoid auxiliary cutting material, the non-scanning area for enabling scanning edge be formed
It is fallen on the auxiliary cutting material with scanning intensity non-uniform areas, the auxiliary is cut into material removal after the completion of cutting.
Preferably, the thickness of the auxiliary cutting material is identical as the thickness of the wafer, the auxiliary cutting material is along level
To length it is identical as the length of the hot spot horizontally.
Preferably, the hot spot that the beam shaping focus module is formed is single-spot, lateral multifocal beam array
Or strip hot spot.
Compared with prior art, laser cutting system provided by the invention and method have the advantages that
1. the present invention realizes wafer horizontal direction dynamic scan using horizontal direction work stage, driven using longitudinal P ZT
Console keeps the focal depth position of hot spot vertically extending, substantially increases laser cutting efficiency；
2. the present invention utilizes lateral multifocal beam array or strip hot spot, it is ensured that the integrality of scanning area, together
When improve the speed of scanning；
3. increasing cricoid auxiliary cutting material in wafer periphery, the non-scanning area of crystal round fringes very small region is extended outwardly
Onto auxiliary cutting material, guarantees the scanning integrality of wafer area, improve cut quality.
Detailed description of the invention
Fig. 1 a and 1b are respectively the schematic diagram of depth of focus extension method in existing laser cutting；
Fig. 2 is the relation schematic diagram of optical maser wavelength and wafer material absorption coefficient；
Fig. 3 a and 3b are respectively the structural schematic diagram of laser cutting system in the embodiment of the present invention one；
When Fig. 4 is that hot spot is single-spot in the embodiment of the present invention one, the schematic diagram of scan path；
When Fig. 5 is that hot spot is lateral multifocal beam array in the embodiment of the present invention one, the schematic diagram of scan path；
When Fig. 6 is that hot spot is strip hot spot in the embodiment of the present invention one, the schematic diagram of scan path；
Fig. 7 is the approximation schematic diagram scanned in the embodiment of the present invention one；
Fig. 8 a and 8b are respectively the structural schematic diagram of laser cutting system in the embodiment of the present invention two；
Fig. 9 is the approximation schematic diagram scanned in the embodiment of the present invention three；
Figure 10 is auxiliary cutting material and wafer position relationship top view in the embodiment of the present invention three.
In Fig. 1 a and 1b: 1- baseplate material, 2,4- amasthenic lens, 3,5- laser beam；
In Fig. 3 a-10: 10- laser, 20- beam shaping focus module, 21- single-spot, 22- transverse direction multifocal light beam battle array
Column, 23- strip hot spot, 30- wafer, 31- scanning area, the non-scanning area of 32-, 33- scanning intensity non-uniform areas, 40- are longitudinal
PZT drive control platform, 50- horizontal direction work stage, 60- auxiliary cutting material.
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.It should be noted that attached drawing of the present invention is all made of simplified form and uses non-essence
Quasi- ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
Embodiment one
Laser cutting system provided by the invention, as best shown in figures 3 a and 3b, comprising:
Laser 10, for laser needed for providing processing；
Beam shaping focus module 20 expands and is formed hot spot for laser, and the hot spot is focused on wafer 30
Surface, in other words, the beam shaping focus module 20, which has, to be realized beam expander, forms diffraction pattern and light beam focusing
Function；
Longitudinal P ZT (piezoelectric ceramics) drive control platform 40, for driving the wafer 30 to do longitudinal simple harmonic motion；And
Horizontal direction work stage 50, for driving the wafer 30 to do horizontal direction movement.
In the present invention, while realizing 30 horizontal direction high speed dynamic scan of wafer using horizontal direction work stage 50, using vertical
Keep the focal depth position of hot spot vertically extending to PZT drive control platform 40, to greatly improve laser cutting efficiency.
It should be noted that the necessary condition that the present invention can be realized is: the wavelength for the laser that laser 10 issues has
The ability of wafer 30 is penetrated, i.e., the material of wafer 30 is relative to the transparent state of optical maser wavelength.Fig. 2 is optical maser wavelength and target material
Expect the relation schematic diagram of absorption coefficient, characterization is penetration capacity of the different wave length in target material.When target material is all
When the non-transparent material as silicon (i.e. 30 material of wafer is silicon), as can be seen from FIG. 2, then need to select wavelength greater than 1um's
Infrared laser.
Preferably, the longitudinal P ZT drive control platform 40 in the present embodiment is fixed on institute please continue to refer to Fig. 3 a and 3b
It states in horizontal direction work stage 50, wafer 30 carries out horizontal direction movement and catenary motion simultaneously, then the fixed hot spot in position exists
Wafer 30 is cut with the motion profile of periodic triangular wave form on wafer 30.
Preferably, asking emphasis with reference to fig. 4 to fig. 6, the hot spot that the beam shaping focus module 20 is formed can be
Single-spot 21, lateral multifocal beam array 22 or strip hot spot 23, wherein Fig. 3 a is hot spot using lateral multifocal
When beam array 22, the schematic diagram of laser cutting system；And Fig. 3 b is when being then hot spot using strip hot spot 23, laser cutting
The schematic diagram of system.
Please emphasis refer to Fig. 4, hot spot is single-spot 21 in figure, and wafer 30 is moved with the direction of solid arrow in scheming, monochromatic light
Spot 21 is cut in wafer 30 with the motion profile of dotted arrow.The generally longitudinally maximum resonance of PZT drive control platform 40
Frequency is 1kHz or so, and when stroke is 100um, the scanning speed to convert is 100mm/s.The maximum of existing XY sports platform
Speed can achieve 1~2m/s, and the speed for cutting needs at least also needs to reach 100mm/s.When horizontal direction scanning speed is also
When 100mm/s, horizontal direction movement velocity and catenary motion speed are same magnitude.Therefore, in cutting process, horizontal direction and vertical
All keep motion state, then the Cutting Road generated in wafer 30 be unlikely to be completely either vertically or horizontally to motion profile, but
There is periodic triangular waveform motion profile as shown in Figure 4.
When single-spot 21 is within the vertically round trip time, the distance horizontally moved is less than or equal to the single-spot
When 21 diameter, may be implemented wafer 30 quasi- all standing scanning, but need maintenance level to low-velocity scanning；When holding horizontal direction
When speed is high speed, although depth of focus is extended, large stretch of non-scanning area 32 (please referring to Fig. 7), scanning area 31 are also left
Integrality it is much insufficient, be unable to reach the common cutting effect gradually focused.
Please emphasis refer to Fig. 5, hot spot is lateral multifocal beam array 22, the transverse direction multifocal beam array 22 in figure
In each light beam when independently analyzing, scan path is consistent with Fig. 4.When in lateral multifocal beam array 22 number of beams be n,
And be L from first light beam to the radial overall length n-th of light beam, lateral multifocal beam array 22 is being swept as a whole
The region covered during retouching greatly increases, and works as lateral multifocal beam array 22 within the vertical round trip time, edge
, it can be achieved that the quasi- all standing of high speed scans when the distance of horizontal direction movement is less than or equal to L.Which solves single-spots 21 and longitudinal direction
When PZT drive control platform 40 combines, it is ensured that scanning area is complete, can only be by reducing scanning speed come the problem of realization.It please weigh
Point refers to Fig. 6, is the result signal that lateral multifocal beam array 22 is changed into strip hot spot 23 and is scanned, effect in figure
It is more obvious.
The present invention utilizes lateral multifocal beam array 22 or strip hot spot 23 and 40 phase knot of longitudinal P ZT drive control platform
It closes, scanning obtains approximation schematic diagram as shown in Figure 7, wherein intermediate major part is scanning area 31, and two sides respectively have one or three
Angular non-scanning area 32.It can be seen that, lateral multifocal beam array 22 or strip hot spot 23 are utilized from Fig. 5 and Fig. 6
The method combined with longitudinal P ZT drive control platform 40, in the two edges of wafer 30, there are still partially non-scanning areas 32, but actually
Horizontally length is far longer than vertical thickness to wafer 30, this partial region is several the percent of very little in 30 entity of wafer
One part, will not influence cutting result substantially.
In the present embodiment, the speed of horizontal direction work stage 50 and the resonance under the certain stroke of longitudinal P ZT drive control platform 40
Relationship between frequency will affect the size in entire scan area 31, and longitudinal P ZT drive control 40 resonance frequencies of platform are bigger, namely certain
Speed under stroke is faster, and the speed of horizontal direction work stage 50 is smaller, can obtain bigger laser scanning area 31.
The present invention also provides a kind of laser cutting methods, emit laser using a laser 10, the laser is through light beam
Shaping focus module 20 forms hot spot after being expanded, the hot spot focuses on 30 surface of wafer, the wafer 30 or the light
Beam shaping focus module 20 does longitudinal simple harmonic motion, and the wafer 30 does horizontal direction movement, the horizontal direction movement and institute simultaneously
It states longitudinal simple harmonic motion to combine to form oblique movement, forms triangular waveform of the laser in the wafer 30 and scan track.This hair
The laser cutting method of bright offer can dynamically increase depth of focus during the scanning process, to improve the efficiency of laser cutting.
Preferably, the hot spot that the beam shaping focus module 20 is formed is monochromatic light please continue to refer to fig. 4 to fig. 6
Spot 21, lateral multifocal beam array 22 or strip hot spot 23, hot spot described in any one of the above is in longitudinal round trip
Time in, the distance that the hot spot is moved in horizontal direction is less than or equal to the length of the hot spot horizontally, to guarantee wafer
30 quasi- all standing scanning.
Embodiment two
Due to only needing wafer 30 to do opposite longitudinal simple harmonic motion relative to hot spot, then the horizontal direction of wafer 30 is cooperated to move
The required motion profile of the present invention can be realized, therefore the longitudinal P ZT drive control platform 40 is securable to the horizontal direction work
On part platform 50, it can also be fixed in the beam shaping focus module 20 and beam shaping is driven to focus mould as shown in figs. 8 a and 8b
20 catenary motion of block can reach the laser cutting effect being the same as example 1.
Embodiment three
Please emphasis refer to Fig. 9 and Figure 10, the present embodiment and the difference of embodiment one and two be: the periphery of the wafer 30
Equipped with cricoid auxiliary cutting material 60.Specifically, after the completion of scanning, there can be non-scanning area 32 on the outside of wafer 30, and because of weight
Folded number is different, and scanning intensity is less than the scanning intensity non-uniform areas 33 in interscan area 31, but the two regions are only
It is more than one the percent of 30 region of whole wafer, influence is basically will not produce on cutting result, if the cutting to whole wafer 30
It, can be uneven by the non-scanning area 32 in former 30 outside of wafer and scanning intensity by auxiliary cutting material 60 when having higher requirements
Region 33 extends outward, that is to say, that the non-scanning area 32 for enabling scanning edge be formed when scanning and the scanning uneven area of intensity
Domain 33 is fallen on the auxiliary cutting material 60, by 60 removal of auxiliary cutting material after the completion of cutting, so that 30 full section of wafer is equal
It falls into scanning area 31, to obtain complete and uniform strength scanning.
Preferably, asking emphasis with reference to Figure 10, when the wafer 30 is round, the auxiliary cutting material 60 is with concentric loop
Mode be nested in the outside of wafer 30, specifically, the thickness of the auxiliary cutting material 60 is identical as the thickness of the wafer 30, institute
It is identical as the length of the hot spot horizontally to state the length of auxiliary cutting material 60 horizontally, it is ensured that while cutting effect,
The waste of material and the energy is not will cause.
In conclusion laser cutting system provided by the invention and method, which includes: laser 10, for providing
Laser；Beam shaping focus module 20 expands and is formed hot spot for laser, and the hot spot is focused on 30 table of wafer
Face；Longitudinal P ZT drive control platform 40, for driving the wafer 30 or the beam shaping focus module 20 to do longitudinal simple harmonic quantity fortune
It is dynamic；And horizontal direction work stage 50, for driving the wafer 30 to do horizontal direction movement.The present invention utilizes horizontal direction work stage 50
While realizing 30 horizontal direction high speed dynamic scan of wafer, the focal depth position edge of hot spot is made using longitudinal P ZT drive control platform 40
Vertical extension, middle focal position exists in vertical not changed static depth of focus extension method, the present invention compared with the existing technology
On the basis of not increasing mechanism complexity, laser cutting efficiency is substantially increased.
Obviously, those skilled in the art can carry out various modification and variations without departing from spirit of the invention to invention
And range.If in this way, these modifications and changes of the present invention belong to the claims in the present invention and its equivalent technologies range it
Interior, then the invention is also intended to include including these modification and variations.
Claims (10)
1. a kind of laser cutting system characterized by comprising
Laser, for providing laser；
Beam shaping focus module expands and is formed hot spot for laser, and the hot spot is focused on crystal column surface；
Zigzag tread patterns console, for driving the wafer or the beam shaping focus module to do longitudinal simple harmonic motion；And
Horizontal direction work stage, for driving the wafer to do horizontal direction movement；
Wherein, the horizontal direction movement and longitudinal simple harmonic motion combine to form oblique movement, form laser in the wafer
Interior uniform scanning track.
2. laser cutting system as described in claim 1, which is characterized in that the zigzag tread patterns console is longitudinal P ZT drive
Dynamic console, is fixed in the beam shaping focus module, or be fixed in the horizontal direction work stage.
3. laser cutting system as described in claim 1, which is characterized in that the beam shaping focus module is formed described
Hot spot is single-spot, lateral multifocal beam array or strip hot spot.
4. laser cutting system as described in claim 1, which is characterized in that the periphery of the wafer is equipped with cricoid auxiliary and cuts
Material cutting.
5. laser cutting system as claimed in claim 4, which is characterized in that the thickness and the wafer of the auxiliary cutting material
Thickness it is identical, the auxiliary cutting material length horizontally is identical as the length of the hot spot horizontally.
6. a kind of laser cutting method, which is characterized in that emit laser using a laser, the laser is focused through beam shaping
Module forms hot spot after being expanded, the hot spot focuses on crystal column surface, the wafer or the beam shaping focus module
Longitudinal simple harmonic motion is done, the wafer does horizontal direction movement, the horizontal direction movement and longitudinal simple harmonic motion combination simultaneously
Oblique movement is formed, triangular waveform of the laser in the wafer is formed and scans track.
7. laser cutting method as claimed in claim 6, which is characterized in that time of the hot spot in longitudinal round trip
Interior, the hot spot is less than or equal to the length of the hot spot horizontally in the distance that horizontal direction moves.
8. laser cutting method as claimed in claim 6, which is characterized in that the periphery of the wafer is equipped with cricoid auxiliary and cuts
Material cutting, the non-scanning area for enabling scanning edge be formed and scanning intensity non-uniform areas are fallen on the auxiliary cutting material, cutting
The auxiliary is cut into material removal after the completion.
9. laser cutting method as claimed in claim 8, which is characterized in that the thickness and the wafer of the auxiliary cutting material
Thickness it is identical, the auxiliary cutting material length horizontally is identical as the length of the hot spot horizontally.
10. laser cutting method as claimed in claim 6, which is characterized in that the institute that the beam shaping focus module is formed
Stating hot spot is single-spot, lateral multifocal beam array or strip hot spot.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610769563.6A CN107790894B (en) | 2016-08-30 | 2016-08-30 | A kind of laser cutting system and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610769563.6A CN107790894B (en) | 2016-08-30 | 2016-08-30 | A kind of laser cutting system and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107790894A CN107790894A (en) | 2018-03-13 |
| CN107790894B true CN107790894B (en) | 2019-06-25 |
Family
ID=61528239
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610769563.6A Active CN107790894B (en) | 2016-08-30 | 2016-08-30 | A kind of laser cutting system and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107790894B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118046102A (en) * | 2022-11-10 | 2024-05-17 | 上海名古屋精密工具股份有限公司 | Processing method and application of laser cutting material |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4329741B2 (en) * | 2005-07-20 | 2009-09-09 | セイコーエプソン株式会社 | Laser irradiation apparatus and laser scribing method |
| JP2012054273A (en) * | 2010-08-31 | 2012-03-15 | Disco Abrasive Syst Ltd | Wafer processing method |
| JP6250329B2 (en) * | 2013-08-19 | 2017-12-20 | 株式会社ディスコ | Processing equipment |
| JP2015088515A (en) * | 2013-10-28 | 2015-05-07 | 株式会社ディスコ | Processing device |
| JP6389638B2 (en) * | 2014-05-12 | 2018-09-12 | 株式会社ディスコ | Laser processing equipment |
| JP6328513B2 (en) * | 2014-07-28 | 2018-05-23 | 株式会社ディスコ | Wafer processing method |
| CN205464805U (en) * | 2016-01-11 | 2016-08-17 | 大族激光科技产业集团股份有限公司 | Laser wire stripping machine and cutting device thereof |
-
2016
- 2016-08-30 CN CN201610769563.6A patent/CN107790894B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN107790894A (en) | 2018-03-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100553853C (en) | Plate cutting method and laser processing device | |
| EP2898982B1 (en) | Method for laser processing of silicon by filamentation of burst ultrafast laser pulses | |
| EP2837462B1 (en) | Photo acoustic compression method for machining a transparent target | |
| US20190160598A1 (en) | Method of Separating Surface Layer of Semiconductor Crystal Using a Laser Beam Perpendicular to the Separating Plane | |
| JP5905274B2 (en) | Manufacturing method of semiconductor device | |
| KR101124347B1 (en) | Method and apparatus for machining based on titled laser scanning | |
| CN102658424B (en) | System and method for machining LED (light-emitting diode) substrate by laser | |
| JPH0639572A (en) | Wafer cutting device | |
| WO2005042421A1 (en) | Glass cutting method | |
| CN106493474A (en) | A kind of laser double-surface score device | |
| CN107790894B (en) | A kind of laser cutting system and method | |
| CN113601027A (en) | Double-laser composite invisible cutting method and processing system | |
| JP7560055B2 (en) | Laser processing method, semiconductor component manufacturing method, and laser processing device | |
| TW200818398A (en) | Method of multi-processing object using polygon mirror | |
| KR20130076440A (en) | Laser cutting apparatus and laser cutting method | |
| KR101621936B1 (en) | Substrate cutting apparatus and method | |
| KR20170053113A (en) | Wafer processing method | |
| JP2018052770A (en) | Method and apparatus for parting brittle material substrate | |
| JP6944703B2 (en) | Method for forming a modified layer of a brittle material substrate | |
| CA2857840C (en) | Method and apparatus for non-ablative, photoaccoustic compression machining in transparent materials using filamentation by burst ultrafast laser pulses | |
| JP2002020134A (en) | Method and device for cracking rigid brittle plate | |
| KR20170053111A (en) | Wafer processing method | |
| KR101247280B1 (en) | Laser back-lapping apparatus and method using intra-beam V-shaped micro-crack | |
| TW202331899A (en) | Semiconductor structure, processing device and processing method of the semiconductor structure | |
| TW202430308A (en) | Laser dicing to control splash |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |