CN107748299A - A kind of multi-environment compatible sensor of Single-Chip Integration - Google Patents
A kind of multi-environment compatible sensor of Single-Chip Integration Download PDFInfo
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- CN107748299A CN107748299A CN201710961435.6A CN201710961435A CN107748299A CN 107748299 A CN107748299 A CN 107748299A CN 201710961435 A CN201710961435 A CN 201710961435A CN 107748299 A CN107748299 A CN 107748299A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/12—Measuring electrostatic fields or voltage-potential
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/18—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer
- G01K7/186—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer using microstructures
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
- G01N27/223—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance for determining moisture content, e.g. humidity
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
- G01N27/226—Construction of measuring vessels; Electrodes therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0862—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with particular means being integrated into a MEMS accelerometer structure for providing particular additional functionalities to those of a spring mass system
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- Chemical & Material Sciences (AREA)
- Immunology (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
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- Analytical Chemistry (AREA)
- Pathology (AREA)
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- Crystallography & Structural Chemistry (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The present invention relates to a kind of multi-environment compatible sensor of Single-Chip Integration, including package substrate, silicon pinboard, processor and stack internal memory, silicon pinboard is arranged on the upper side of the package substrate, and the end interlocking of silicon pinboard has embedded silicon-based devices and embedded passive device；Processor is mounted in the upper side of silicon pinboard, stacks upper side of the memory setting in processor, cmos signal process circuit is provided with the processor in the left side for stacking internal memory, cmos signal process circuit is with stacking internal memory interconnection；Electric-field sensor, acceleration transducer, pressure sensor, temperature sensor, humidity sensor and RF chips are provided with by TSV on silicon pinboard, the present invention has the advantages of integrated level height, small volume, compatibility is strong, reliability is high.
Description
Technical field
The invention belongs to technical field of wireless, and in particular to a kind of multi-environment compatibility sensing of Single-Chip Integration
Device.
Background technology
The three-dimensional heterogeneous integrated approach of multisensor, with its unique advantage, turns into MEMS and sensor integration system with system
Important solution method, and the following Critical policies for realizing complicated integrated system, are taking in civil area and military field
For single-sensor system, turn into following developing direction.
Although the three-dimensionally integrated micro-system of multisensor depicts future direction for the development of sensor, multisensor is heterogeneous
Integrated system realizes sophisticated functions, and some commercial products have occurred, but generally multiple-sensor integration still in
In evolution, realize that more MEMS sensors still face huge technological challenge with the three-dimensionally integrated of CMOS circuits：
（1）The process compatible sex chromosome mosaicism of multisensor itself in complication system：Structure, sensitive mechanism and the manufacture of most sensors
Method is different, how by one-time process manufacture multisensor, be to realize the matter of utmost importance that the system integration is faced, also or
The integrated of multisensor is realized by the way of insert layer, but how to improve integrated level, reduction volume and reduction and interferes still
Old is extremely difficult；
（2）The three-dimensionally integrated process compatible sex chromosome mosaicism of MEMS sensors, most MEMS sensors have the hanging micro- of fragility
Structure, it is easily broken during three-dimensionally integrated, causes conventional three-dimensional integrated approach to most MEMS sensors and discomfort
With；
（3）Three-dimensionally integrated multisensor is a complication system, in basic theories such as system reliability, device property, thermodynamics
Aspect has a large amount of problems to be resolved；
（4）Micron/nano integrated sensor is done across the conversion process of energy and mechanism of yardstick, the intersection of tested physichemical quantity
Disturb, and the still old many problems of the Stress Control of sensor and nano-sensor Noise measarement etc. not yet solve.
The content of the invention
The purpose of the present invention be overcome the deficiencies in the prior art and provide a kind of integrated level height, small volume, compatibility it is strong, can
By the multi-environment compatible sensor of the high Single-Chip Integration of property.
Technical scheme is as follows：A kind of multi-environment compatible sensor of Single-Chip Integration, including package substrate
（1）, silicon pinboard（2）, processor（3）And stack internal memory（4）, the silicon pinboard（2）It is arranged on the package substrate（1）
Upper side, silicon pinboard（2）End interlocking have embedded silicon-based devices（5）With embedded passive device（6）；The processing
Device（3）It is mounted in silicon pinboard（2）Upper side, the stacking internal memory（4）It is arranged on processor（3）Upper side, the heap
Folded internal memory（4）Left side processor（3）On be provided with cmos signal process circuit（7）, the cmos signal process circuit（7）
With stacking internal memory（4）Interconnection；Silicon pinboard（2）It is upper that electric-field sensor is provided with by TSV（8）, acceleration transducer（9）, pressure
Force snesor（10）, temperature sensor（11）, humidity sensor（12）And RF chips（13）.
Preferably, the electric-field sensor（8）For the horizontal induction type fish bone structure based on SOI.
Preferably, the acceleration transducer（9）Using the thicker device layer of SOI substrate as mass and interdigital electricity
Hold.
Preferably, the pressure sensor（10）For pressure resistance type, the pressure sensor（10）By carrying diaphragm and setting
Piezo-resistance on carrying diaphragm（14）Form, the carrying diaphragm includes protective layer silica（15）With buried regions titanium dioxide
Silicon（16）, the piezo-resistance（14）It is arranged on the protective layer silica（15）Downside.
Preferably, the temperature sensor（11）Using the Pt resistance of sputtering, the resistance of the Pt resistance varies with temperature
Characteristic beRt= R0 (1+αt + βt +γt + ⋅⋅⋅), its structure is broken line type structure.
Preferably, the humidity sensor（12）To add Sanming City of strata acid imide composition between two layers of Pt electrode
Control structure capacitive.
Preferably, the sandwich structure capacitive humidity sensor（12）Implementation method be that two layers Pt electrode is using just
Glue lift-off technology is patterned, and after upper strata Pt electrodes positive photoresist is peeled off, is replicated the shape of Pt electrodes using RIE dry etchings
To polyimide layer, the polyline shaped electric capacity that the heteromeric imide layer of two layers of Pt electrode holder is formed is formed.
Preferably, the cmos signal process circuit（7）With processor（3）Between pass through metal eutectic bonding and macromolecule
Bonding is forever bonded.
Preferably, the metal eutectic bonding is bonded for Cu-Sn metal eutectics, and its reaction temperature is 227 DEG C, the high score
Sub-key is closed to be realized using BCB, and bonding temperature is 230-250 DEG C.
Preferably, the electric-field sensor（8）, acceleration transducer（9）And pressure sensor（10）Around use Cu-
Sn metal eutectics are bonded in silicon pinboard（2）On.
Compared with prior art, the beneficial effects of the invention are as follows：By multiple-sensor integration on a silicon pinboard, form
The integrated form chip sensor of multi-environment detection, reduce the volume of conventional sensors；Realized by RF chips integrated multi-environment
The signal transmission of compatible sensor and host computer；By metal eutectic bonding and high molecule bonding technology to entering between each device
The permanent bonding of row, so as to improve the reliability of system and reduce stress, while solve thermodynamic problems using TS technologies.
Brief description of the drawings
Fig. 1 is the structural representation of the present invention.
Fig. 2 is the structural representation of the pressure sensor in the present invention.
Fig. 3 is the signal flow block diagram of the present invention.
Wherein, 1, package substrate, 2, silicon pinboard, 3, processor, 4, stack internal memory, 5, embedded silicon-based devices, 6, embedding
Enter formula passive device, 7, cmos signal process circuit, 8, electric-field sensor, 9, acceleration transducer, 10, pressure sensor, 11,
Temperature sensor, 12, humidity sensor, 13, RF chips, 14, piezo-resistance, 15, protective layer silica, 16, buried regions dioxy
SiClx.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of creative work is not made
Embodiment, belong to the scope of protection of the invention.
As shown in Figure 1 to Figure 3, the multi-environment compatible sensor of a kind of Single-Chip Integration, including the switching of package substrate 1, silicon
Plate 2, processor 3 and stacking internal memory 4, the silicon pinboard 2 are arranged on the upper side of the package substrate 1, silicon pinboard 2
End interlocking has embedded silicon-based devices 5 and embedded passive device 6；The processor 3 is mounted in the upside of silicon pinboard 2
Face, the stacking internal memory 4 are arranged on the upper side of processor 3, are provided with the processor 3 in the left side for stacking internal memory 4
Cmos signal process circuit 7, the cmos signal process circuit 7 interconnect with stacking internal memory 4；Set on silicon pinboard 2 by TSV
There are electric-field sensor 8, acceleration transducer 9, pressure sensor 10, temperature sensor 11, humidity sensor 12 and RF chips
13。
In the present embodiment, the electric-field sensor 8 is the horizontal induction type fish bone structure based on SOI, so as to realize pair
The driving of bucking electrode, using induction electrode charge inducing to produce alternating current, so as to realize the high-resolution of measurement and height
Sensitivity, and using the thermal excitation driving structure of fish bone structure, applying the voltage of certain frequency to silicon beam makes it periodically
Heating and cooling, and then thermal stress is produced, drive bucking electrode of reciprocating vibration in the horizontal direction by the amplification of lever；It is described to add
Velocity sensor 9 as mass and interdigital capacitor, is once manufactured using the thicker device layer of SOI substrate using deep etching,
And intersecting axle is avoided to disturb；The pressure sensor 10 is pressure resistance type, and the pressure sensor 10 is by carrying diaphragm and setting
Piezo-resistance 14 on carrying diaphragm is formed, and the carrying diaphragm includes protective layer silica 15 and buried silicon dioxide layer
16, the piezo-resistance 14 is arranged on the downside of the protective layer silica 15, and pressure sensor 10 uses monocrystalline silicon pressure
The piezoresistive transducer based on SOI is made in resistance, reduces the residual stress of device inside, improves the reliability of device；The temperature
Using the Pt resistance sputtered, the characteristic that the resistance of the Pt resistance varies with temperature is sensor 11Rt= R0 (1+αt + βt +γt + ⋅⋅⋅), its structure is broken line type structure, to obtain big resistance in small area, increases the sensitivity of temperature measuring unit；
The humidity sensor 12 is the sandwich structure electric capacity that strata acid imide composition is added between two layers of Pt electrode；Described three
The implementation method of Mingzhi's structure capacitive humidity sensor 12 is that two layers of Pt electrode is patterned using positive photoresist lift-off technology, will
After upper strata Pt electrodes positive photoresist is peeled off, the shape of Pt electrodes is copied into polyimide layer using RIE dry etchings, forms two layers of Pt
The polyline shaped electric capacity that the heteromeric imide layer of electrode holder is formed, to realize larger electric capacity in less area, and have more
Polyimides be exposed improve pass humidity sensor 12 response speed；The cmos signal process circuit 7 and processor 3
Between by metal eutectic bonding and high molecule bonding be forever bonded；The metal eutectic bonding is Cu-Sn metal eutectics
Bonding, its reaction temperature are 227 DEG C, and the high molecule bonding is realized using BCB, and bonding temperature is 230-250 DEG C；The electric field
It is bonded in around sensor 8, acceleration transducer 9 and pressure sensor 10 using Cu-Sn metal eutectics on silicon pinboard 2,
So that it is guaranteed that the reliability of each sensor.
In the present invention, electric-field sensor 8, acceleration transducer 9, pressure sensor 10, temperature sensor 11, humidity pass
Sensor 12 sends after cmos signal process circuit 7 is changed the data detected to processor 3, and then data pass through processor
3 are sent to stacking internal memory 4, and the RF chips 13 by being connected with processor 3 are sent to host computer, by host computer to monitoring
Data carry out observation analysis.
Although the present invention is described in detail with reference to the foregoing embodiments, for those skilled in the art,
It can still modify to the technical scheme described in foregoing embodiments, or which part technical characteristic is carried out etc.
With replacing, within the spirit and principles of the invention, any modification, equivalent substitution and improvements made etc., this should be included in
Within the protection domain of invention.
Claims (10)
1. a kind of multi-environment compatible sensor of Single-Chip Integration, including package substrate（1）, silicon pinboard（2）, processor（3）
And stack internal memory（4）, it is characterised in that：The silicon pinboard（2）It is arranged on the package substrate（1）Upper side, silicon turn
Fishplate bar（2）End interlocking have embedded silicon-based devices（5）With embedded passive device（6）；The processor（3）It is mounted in silicon
Pinboard（2）Upper side, the stacking internal memory（4）It is arranged on processor（3）Upper side, the stacking internal memory（4）A left side
The processor of side（3）On be provided with cmos signal process circuit（7）, the cmos signal process circuit（7）With stacking internal memory（4）
Interconnection；Silicon pinboard（2）It is upper that electric-field sensor is provided with by TSV（8）, acceleration transducer（9）, pressure sensor（10）、
Temperature sensor（11）, humidity sensor（12）And RF chips（13）.
A kind of 2. multi-environment compatible sensor of Single-Chip Integration as claimed in claim 1, it is characterised in that：The electric field passes
Sensor（8）For the horizontal induction type fish bone structure based on SOI.
A kind of 3. multi-environment compatible sensor of Single-Chip Integration as claimed in claim 1, it is characterised in that：The acceleration
Sensor（9）Using the thicker device layer of SOI substrate as mass and interdigital capacitor.
A kind of 4. multi-environment compatible sensor of Single-Chip Integration as claimed in claim 1, it is characterised in that：The pressure passes
Sensor（10）For pressure resistance type, the pressure sensor（10）By carrying diaphragm and the piezo-resistance being arranged on carrying diaphragm（14）
Form, the carrying diaphragm includes protective layer silica（15）And buried silicon dioxide layer（16）, the piezo-resistance（14）If
Put in the protective layer silica（15）Downside.
A kind of 5. multi-environment compatible sensor of Single-Chip Integration as claimed in claim 1, it is characterised in that：The temperature passes
Sensor（11）Using the Pt resistance of sputtering, the characteristic that the resistance of the Pt resistance varies with temperature isRt = R0 (1+αt + βt +γt + ⋅⋅⋅), its structure is broken line type structure.
A kind of 6. multi-environment compatible sensor of Single-Chip Integration as claimed in claim 1, it is characterised in that：The humidity passes
Sensor（12）To add the sandwich structure electric capacity of strata acid imide composition between two layers of Pt electrode.
A kind of 7. multi-environment compatible sensor of Single-Chip Integration as claimed in claim 6, it is characterised in that：The sandwich
Structure capacitive humidity sensor（12）Implementation method be that two layers of Pt electrode is patterned using positive photoresist lift-off technology, will be upper
After layer Pt electrodes positive photoresist is peeled off, the shape of Pt electrodes is copied into polyimide layer using RIE dry etchings, forms two layers of Pt electricity
Pole is mingled with the polyline shaped electric capacity of polyimide layer composition.
A kind of 8. multi-environment compatible sensor of Single-Chip Integration as claimed in claim 1, it is characterised in that：The CMOS letters
Number process circuit（7）With processor（3）Between by metal eutectic bonding and high molecule bonding be forever bonded.
A kind of 9. multi-environment compatible sensor of Single-Chip Integration as claimed in claim 8, it is characterised in that：The metal is total to
Crystalline substance bonding is bonded for Cu-Sn metal eutectics, and its reaction temperature is 227 DEG C, and the high molecule bonding is realized using BCB, bonding temperature
Spend for 230-250 DEG C.
A kind of 10. multi-environment compatible sensor of Single-Chip Integration as claimed in claim 1, it is characterised in that：The electric field
Sensor（8）, acceleration transducer（9）And pressure sensor（10）Around using Cu-Sn metal eutectics be bonded in silicon transfer
Plate（2）On.
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| CN201710961435.6A CN107748299A (en) | 2017-10-16 | 2017-10-16 | A kind of multi-environment compatible sensor of Single-Chip Integration |
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| CN201710961435.6A CN107748299A (en) | 2017-10-16 | 2017-10-16 | A kind of multi-environment compatible sensor of Single-Chip Integration |
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Cited By (7)
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| CN108896218A (en) * | 2018-07-13 | 2018-11-27 | 河南汇纳科技有限公司 | A kind of piezoresistive pressure sensor and its manufacturing method |
| CN109959826A (en) * | 2019-02-01 | 2019-07-02 | 上海交通大学 | A kind of electric-field sensor of planar structure and preparation method thereof |
| CN110006549A (en) * | 2019-03-27 | 2019-07-12 | 电子科技大学 | A kind of flexible Temperature Humidity Sensor of integral structure and preparation method thereof |
| TWI740256B (en) * | 2019-10-31 | 2021-09-21 | 國立清華大學 | Sensing device and method to produce the device |
| CN114152360A (en) * | 2021-10-27 | 2022-03-08 | 贵州航天智慧农业有限公司 | MEMS temperature, humidity and pressure three-in-one sensor chip and manufacturing process thereof |
| CN115092880A (en) * | 2022-06-22 | 2022-09-23 | 无锡惠贻华普微电子有限公司 | Combined multifunctional sensor integration method and system |
| CN115219094A (en) * | 2022-07-06 | 2022-10-21 | 无锡惠贻华普微电子有限公司 | Waterproof type pressure sensor |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108896218A (en) * | 2018-07-13 | 2018-11-27 | 河南汇纳科技有限公司 | A kind of piezoresistive pressure sensor and its manufacturing method |
| CN109959826A (en) * | 2019-02-01 | 2019-07-02 | 上海交通大学 | A kind of electric-field sensor of planar structure and preparation method thereof |
| CN109959826B (en) * | 2019-02-01 | 2021-03-26 | 上海交通大学 | Electric field sensor with planar structure and preparation method thereof |
| CN110006549A (en) * | 2019-03-27 | 2019-07-12 | 电子科技大学 | A kind of flexible Temperature Humidity Sensor of integral structure and preparation method thereof |
| CN110006549B (en) * | 2019-03-27 | 2021-07-06 | 电子科技大学 | Flexible temperature and humidity sensor with integrated structure and preparation method thereof |
| TWI740256B (en) * | 2019-10-31 | 2021-09-21 | 國立清華大學 | Sensing device and method to produce the device |
| CN114152360A (en) * | 2021-10-27 | 2022-03-08 | 贵州航天智慧农业有限公司 | MEMS temperature, humidity and pressure three-in-one sensor chip and manufacturing process thereof |
| CN115092880A (en) * | 2022-06-22 | 2022-09-23 | 无锡惠贻华普微电子有限公司 | Combined multifunctional sensor integration method and system |
| CN115092880B (en) * | 2022-06-22 | 2024-08-16 | 无锡惠贻华普微电子有限公司 | Combined multifunctional sensor integration method and system |
| CN115219094A (en) * | 2022-07-06 | 2022-10-21 | 无锡惠贻华普微电子有限公司 | Waterproof type pressure sensor |
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Application publication date: 20180302 |