CN107728437A - The development pattern precision control method and its developing apparatus of mask plate - Google Patents
The development pattern precision control method and its developing apparatus of mask plate Download PDFInfo
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- CN107728437A CN107728437A CN201711147382.0A CN201711147382A CN107728437A CN 107728437 A CN107728437 A CN 107728437A CN 201711147382 A CN201711147382 A CN 201711147382A CN 107728437 A CN107728437 A CN 107728437A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The embodiment of the invention discloses the development pattern precision control method and its developing apparatus of a kind of mask plate.Methods described includes：In developing process, the parallel light irradiation mask plate surface that is sent using two light sources；The developing process has several photographic parameters determined；In predetermined viewing angle, the scanning lines of mask plate surface is obtained with the changing rule of developing time；According to the changing rule, it is determined that the duration that develops corresponding with the developing process.The visualizing control that the control method uses, can meet degree of precision developing process demand, and not influenceed by any figure, exposure energy, material type, have the good result of increase developing process tolerance.
Description
Technical field
The present invention relates to the development pattern precision control method of technical field of manufacturing semiconductors, more particularly to a kind of mask plate
And its developing apparatus.
Background technology
Using photoresist and mask plate, it is made up accordingly in glass or other substrate surfaces of exposed and developed mode
Design layout or figure be technology very conventional in semiconductor, electronical display, electronic circuit field.Wherein, how to control
The development pattern precision obtained after system development is wherein mostly important part.
In existing lithography development process, entering for development is controlled usually using fixed developing time, etching period etc.
Journey.But due to may be disturbed in developing process by many different factors.Therefore, if using fixed developing time or
When person's etching period carries out development pattern precision control, if the variation for some factors occur can cause to develop, precision is by serious shadow
Ring, so as to which the quality of product can not be ensured.For example, the change of the factor such as exposure energy, liquor strength, temperature, photoresist type, meeting
Directly influence the development precision, development edge quality and fixing efficiency of development operation procedure graph.
It is existing to propose using development auxiliary figure in order to avoid influence factor changes the influence to caused by development pattern precision
The technical scheme of shape.The development secondary graphics additionally set can be as developing process mark and reference, make technical staff can
With more precise control developing time, preferably development pattern precision is obtained.
In process of the present invention is realized, inventor has found that correlation technique has problems with：It is existing to use development auxiliary figure
Although the mode of shape can avoid development factor from changing the influence to caused by development pattern precision, extra increased development
Secondary graphics need to take certain area, cause effective usable floor area of material to decline.Moreover, when edge active graphical away from
From it is nearer when, then can not add development secondary graphics, its application can be subject to certain restrictions.
The content of the invention
For above-mentioned technical problem, the present invention implement to provide a kind of development pattern precision control method of mask plate and its
Developing apparatus, easily it is disturbed with solving existing development pattern precision control, the problem of the reduction of effective usable floor area.
The first aspect of the embodiment of the present invention provides a kind of development pattern precision control method of mask plate.Methods described bag
Include：
In developing process, the parallel light irradiation mask plate surface that is sent using two light sources；The developing process has
Several photographic parameters determined；In predetermined viewing angle, the scanning lines of mask plate surface is obtained with the change of developing time
Law；According to the changing rule, it is determined that the duration that develops corresponding with the developing process.
Alternatively, the scanning lines changing rule is：Emerge preliminary sweep lines, scanning lines image occur, occur
Incomplete gradual change image and appearance development figure.
Alternatively, the developing process includes first stage to the 5th stage；First is represented when emerging preliminary sweep lines
Stage completes；Represent that second stage is completed, the incomplete gradual change graphical representation phase III is complete when occurring when there is scanning lines image
Into；Represent that fourth stage is completed when there is development figure.
Alternatively, it is described according to the changing rule, it is determined that the duration that develops corresponding with the developing process, specific bag
Include：By the contrast experiment with test development figure, the development duration in the 5th stage is determined.
Alternatively, the contrast experiment is：Keep photographic parameter constant, obtain several resolution charts and corresponding development
Duration；Difference between comparison object figure and the resolution chart；According to the difference, the development in the 5th stage is determined
Duration.
Alternatively, a length of photoresist surface touches developer liquids to photoresist surface institute during the development in the 5th stage
Have 1/10th of total duration used in scanning lines whole disappearance.
Alternatively, the photographic parameter includes exposure energy, liquor strength, temperature or photoresist type.
Alternatively, the type of the photoresist is TFP650TFP1350, AZ1500, IP3600.
Alternatively, methods described also includes：Photoresist is spin-coated on substrate surface, forms uniform photoresist layer；Institute
State and mask plate is covered on photoresist layer；The photoresist is exposed in a manner of scanning one by one.
The second aspect of the embodiment of the present invention provides a kind of for performing development pattern precision control method as described above
Developing apparatus.The developing apparatus includes：Two sources of parallel light and dipper；
The source of parallel light is vertically set on the top of the dipper, for exporting directional light；The dipper is built-in
There is development decoction；The development decoction did not had mask plate surface, was formed after the parallel light irradiation in the mask plate surface aobvious
Show the latent image area of scanning lines.
The present invention is implemented in the technical scheme of offer, and using the mode of double flat line light source, mask plate is made in developing process
The scanning lines of macroscopic can be presented.Thus, it is possible to calculate and determine by the changing rule of these scanning lines and be aobvious
The developing time of shadow process, realize the control for the pattern precision that develops.
The visualizing control that the control method uses, can meet degree of precision developing process demand, and not by any
The influence of figure, exposure energy, material type, there is the good result of increase developing process tolerance.
Brief description of the drawings
Fig. 1 is one embodiment schematic diagram of existing photoresist exposure imaging reaction principle；
Fig. 2 is one embodiment schematic diagram of the photoresist scan exposure one by one of the embodiment of the present invention；
Fig. 3 is one embodiment schematic diagram of the microcosmic developing process of the embodiment of the present invention.
Fig. 4 is one embodiment schematic diagram of the developing apparatus of the embodiment of the present invention.
Fig. 5 is one embodiment schematic diagram of the calculating development compensation time of the embodiment of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, the every other implementation that those skilled in the art are obtained under the premise of creative work is not made
Example, belongs to the scope of protection of the invention.
It should be noted that when element is expressed " being fixed on " another element, it can directly on another element,
Or there may be one or more elements placed in the middle therebetween.When an element is expressed " connection " another element, it can be with
It is directly to another element or there may be one or more elements placed in the middle therebetween.Used in this specification
The orientation or position of the instruction such as term " vertical ", " horizontal ", "left", "right", " on ", " under ", " interior ", " outer ", " bottom "
Relation is based on orientation shown in the drawings or position relationship, is for only for ease of the description present invention and simplifies description, without referring to
Show or imply that the device of meaning or element there must be specific orientation, with specific azimuth configuration and operation, therefore can not manage
Solve as limitation of the present invention.In addition, term " first ", " second " etc. be only used for describe purpose, and it is not intended that instruction or
Imply relative importance.
Unless otherwise defined, technology all used in this specification and scientific terminology are led with belonging to the technology of the present invention
The implication that the technical staff in domain is generally understood that is identical.Used term is simply in the description of the invention in this specification
The purpose of description specific embodiment, it is not intended to the limitation present invention.Term "and/or" includes used in this specification
The arbitrary and all combination of one or more related Listed Items.Implement in addition, invention described below is different
As long as involved technical characteristic does not form conflict can and be combined with each other each other in mode.
Mask plate is a kind of glass support plate that the information such as figure, word are recorded by surface metal film.It is right by mask plate
, can be with the corresponding development figure of formation on substrate or substrate after photoresist is exposed and developed.
During photoresist developing or etching work procedure, according to being actually needed, it is necessary to development for chip or domain
Pattern precision is accurately controlled, and accurately holds developing time to ensure that resolution ratio of development figure etc. requires.
Development pattern precision refers to that the photoresist that mask plate surface is exposed is sent out during development or etching work procedure
The control ability of the biochemical critical management and control scope of reaction.Be accurately controlled development pattern precision be in semiconductor process very
Important link.
The exposed and developed principle of typical photoresist is specific as shown in Fig. 1 chemical equation.First, photoresist is in mask
Under the shade of plate, subregion receives the irradiation of ultraviolet light, chemically reacts.Then, the photoresist to chemically react
It can be dissolved in alkaline-based developer, so as to leave developing pattern corresponding with mask plate in substrate surface.
In embodiments of the present invention, completed when photoresist exposes by the way of scanning is spliced one by one.As shown in Fig. 2
Certain difference directly be present with the exposure energy that non-joining place receives and (lead in the energy that the joining place B between every A is received
Often it is 1%-3%).Such capacity volume variance is in developing process, after the photoresist of different zones can be caused to be contacted with developer solution,
Reaction speed is distinguished.When the energy that joining place receives is higher, this region soluble is in the speed of developer solution.And
In the relatively low region of the energy received, the speed for being dissolved in developer solution is slower.Finally produced due to the difference of dissolution velocity
The step surface highly to differ.In the present embodiment, the thickness deviation that photoresist is presented in developing process is represented with " micro- step ".
Describe the formation of above-mentioned micro- ledge structure in detail below in conjunction with the schematic diagram of the lithography development process shown in Fig. 3
Principle.
A, after scan exposure one by one is carried out with certain width, the photoresist of mask plate surface can form exposure region
Domain 11 and non-exposed areas 12.Wherein, repetition occurs between the joining place between each sweep length (or critical point)
The superposition exposure area 13 and half-exposure region 14 of exposure.
B, during adding developer solution progress developing reaction, exposure area 12 can be dissolved in normal reaction speed
In developer solution.And exposure area 13 is superimposed because energy is higher, the speed of dissolving can be higher than exposure area 11.Opposite, half
Exposure area 14 then can have slower dissolution velocity because the light energy received is relatively low.Therefore, exposure area 11, folded
Add the falling head between exposure area 13 and half-exposure region 14 different.After certain time, it will produce as schemed institute
The plane for the out-of-flatness shown, there is above-mentioned micro- ledge structure.
C, when developing process continues, superposition exposure area 13 can disappear prior to the exposure area 11 of normal reaction
Lose.When can have corresponding between normal exposure area 11 between these superposition exposure areas 13 and half-exposure region 14
Between it is poor.
D, exposure area 13 and half-exposure region 14 are superimposed and exposure area 11 eventually all disappears, leaves behind phase
The development figure answered, mark developing process are completed.
Due to can have generation and the disappearance process of above-mentioned micro- step in all developing process.Therefore, no matter show
Any change occurs for the factor during shadow, can be according to above-mentioned changing rule, it is determined that the developing time finally needed, is obtained
Meet the target development pattern precision of requirement.
In embodiments of the present invention, can be by the way of double flat line light source, by double parallel light in different medium
Reflection and refraction action, make above-mentioned micro- ledge structure can be shown as in developing process can be visual scanning lines image, make
For mark developing time is accurately controlled for support technician.
Fig. 4 is developing apparatus provided in an embodiment of the present invention.As shown in figure 4, the developing apparatus includes：Two sources of parallel light
410 and dipper 420.
The source of parallel light 410 is vertically set on the top of the dipper, for exporting directional light.In the dipper
Equipped with development decoction.
In developing process, as shown in Figure 4, it would be desirable to which the mask plate 430 to be developed is placed in dipper, described in order
Development decoction did not had mask plate surface.After the parallel light irradiation, display scanning lines can be formed in the mask plate surface
Latent image area 440.
Operating personnel 450 can observe in one or more different angle in a manner of visually observing and determine latent image
The scanning lines image change situation in area 440, and calculate and determine currently to develop according to the rule of scanning lines image change
Development duration corresponding to journey, realize the accurate control to the pattern precision that develops.
Below in conjunction with developing process, the changing rule of scanning lines image is stated in detail.In the embodiment of the present invention
In the lithography development process of offer, 5 stages can be divided into.Its is specific as follows：
First stage (about 3-5 seconds)：After photoresist after exposure contacts with developer solution, the higher superposition of photosensitive energy
The speed of exposure area subparticipation chemical reaction is faster than the normal part for not being superimposed exposure, forms first stage shallower initial
Scan lines image.
Second stage (about 5-15 seconds)：With the increase in reaction time, the chemical reaction of photoresist continues, step
Gradually deepen, meeting shape second stage more significantly scans textured image.
Phase III (about 15-25 seconds)：Between when reacted when continuing increase, the photoresist for participating in reaction at first can be complete
Portion is dissolved in developer liquids, and the relatively low photoresist of energy is also continuing to participate in chemical reaction, can forming portion light splitting carve
The incomplete image that glue comes off.
Fourth stage (about 25-40 seconds)：After all development is complete for last photosensitive photoresist, it can be seen that mask plate
The image of corresponding normal development figure.
5th stage (about 3-10 seconds)：After the image of normal development figure of fourth stage appearance is seen, also need
Continue development a period of time to solidify the difference section in superposition area and half-exposure region as the development compensation time.
According to description above it is understood that four-stage is present significantly before developing process, can be visually
Feature.Operating personnel can change to determine the aobvious of photoresist in developing process is carried out according to the image of these scanning lines
Shadow process.And then need to carry out the corresponding development duration for calculating and determining the stage with test experiments in the 5th stage.
In certain embodiments, the development duration in the 5th stage can be calculated by method as shown in Figure 5 and determined：
S510：On the premise of fixing or ensuring that other conditions are constant, development obtains resolution chart.
S520：Using modes such as resolution chart method of comparison or special instruments, the real data of resolution chart is measured with setting
Count the difference or deviation between the data of figure.
S530, according to the difference or deviation, carry out developing time adjustment, determine the ginseng of the development duration in the 5th stage
Examine time range.
S540, repeat twice or repeatedly to test, superposition calculation goes out one more in original reference time scope
For accurate time range, (i.e. the development duration in the 5th stage) is compensated as developing time.
By the method for above-mentioned resolution chart, by changing the development conditions such as photoresist type, you can draw for difference
The development compensation time of glue-type, realize the accurate control for the pattern precision that develops.
The method provided by foregoing invention embodiment, different materials (such as different photoresist type can be directed to
TFP650TFP1350, AZ1500, IP3600), (corresponding DOSE values scope is energy：800--2500) determine corresponding aobvious
The shadow time.It can be seen that in developing process, it is to change photoresist sense that what various influence factors were brought, which changes final result,
Light energy and superposition area, the area in half-exposure region.But these changes are influenceed all without by above changing rule.
Therefore, in actual developing process, the developing time (compensation time) of the 5th section of control is aimed at so as to control
The change of factors above influences, and the photoresist that photoresist is exposed to transition point of proximity all develops cmpletely, so as to reduce this
Development of the part photoresist to pattern edge size after whole development.
In certain embodiments, the compensation time in the 5th stage can be specifically the development total duration in first to fourth stage
1/10.For example, for TFP1500 glue-type, in its developing process, about 40 seconds first stage to fourth stage used times, that
The used time in the 5th stage is the 40/10=4 seconds.
In another example the about 70 seconds development of Z1500 glue-type complete first stage to fourth stage used times, then the 5th of the glue-type
The developing time in stage was then controlled as the 70/10=7 seconds.
In summary, it is provided in an embodiment of the present invention development pattern precision control method by way of double flat line light source,
Make mask plate surface presented in developing process can be visual scanning lines changing rule.According to these scanning lines changing rules
And the extinction time of scanning lines image can calculate and summarize the factors such as different materials, energy, technique change
Develop duration, so as to the development deviation size of effective, accurate, quick control figure, ensures whole developing process pattern precision
Controllability.
It is understood that for those of ordinary skills, can be with technique according to the invention scheme and this hair
Bright design is subject to equivalent substitution or change, and all these changes or replacement should all belong to the guarantor of appended claims of the invention
Protect scope.
Claims (10)
- A kind of 1. development pattern precision control method of mask plate, it is characterised in that including：In developing process, the parallel light irradiation mask plate surface that is sent using two light sources；The developing process, which has, to be determined Several photographic parameters；In predetermined viewing angle, the scanning lines of mask plate surface is obtained with the changing rule of developing time；According to the changing rule, it is determined that the duration that develops corresponding with the developing process.
- 2. according to the method for claim 1, it is characterised in that it is described scanning lines changing rule be：Emerge preliminary sweep Lines, there is scanning lines image, incomplete gradual change image occur and development figure occur.
- 3. according to the method for claim 2, it is characterised in that the developing process includes first stage to the 5th stage；Represent that the first stage completes when emerging preliminary sweep lines；When occur scanning lines image represent second stage complete, when There is incomplete gradual change graphical representation phase III completion；Represent that fourth stage is completed when there is development figure；5th stage The time is compensated for development.
- 4. according to the method for claim 3, it is characterised in that it is described according to the changing rule, it is determined that with the development Development duration, is specifically included corresponding to process：By the contrast experiment with resolution chart, the development duration in the 5th stage is determined.
- 5. according to the method for claim 4, it is characterised in that the contrast experiment is：Keep photographic parameter constant, obtain several resolution charts and corresponding development duration；Difference between comparison object figure and the resolution chart；According to the difference, the development duration in the 5th stage is determined.
- 6. according to the method for claim 3, it is characterised in that the development duration in the 5th stage is about photoresist surface Touch 1/10th of total duration used in developer liquids to all scanning lines whole disappearances in photoresist surface.
- 7. according to the method for claim 1, it is characterised in that the photographic parameter includes exposure energy, liquor strength, temperature Degree or photoresist type.
- 8. according to the method for claim 7, it is characterised in that the type of the photoresist be TFP650TFP1350, AZ1500、IP3600。
- 9. according to the method for claim 1, it is characterised in that also include：Photoresist is spin-coated on substrate surface, forms uniform photoresist layer；Mask plate is covered on the photoresist layer；The photoresist is exposed in a manner of scanning one by one.
- 10. a kind of developing apparatus for being used to perform the development pattern precision control method as described in claim 1-9 is any, it is special Sign is, including：Two sources of parallel light and dipper；The source of parallel light is vertically set on the top of the dipper, for exporting directional light；The dipper is built with aobvious Shadow decoction；The development decoction did not had mask plate surface, and forming display in the mask plate surface after the parallel light irradiation scans line The latent image area on road.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711147382.0A CN107728437A (en) | 2017-11-17 | 2017-11-17 | The development pattern precision control method and its developing apparatus of mask plate |
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| CN201711147382.0A CN107728437A (en) | 2017-11-17 | 2017-11-17 | The development pattern precision control method and its developing apparatus of mask plate |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1348594A (en) * | 1998-12-10 | 2002-05-08 | 国际商业机器公司 | Method for forming transparent conductive film by using chemically amplified resist |
| US6423977B1 (en) * | 1997-02-26 | 2002-07-23 | Kabushiki Kaisha Toshiba | Pattern size evaluation apparatus |
| CN1811598A (en) * | 2005-01-25 | 2006-08-02 | 中国科学院微电子研究所 | Method for flexibly controlling electron beam lithography development time through layout design |
| CN102566327A (en) * | 2010-12-08 | 2012-07-11 | 无锡华润上华科技有限公司 | Developing uniformity debugging method |
-
2017
- 2017-11-17 CN CN201711147382.0A patent/CN107728437A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6423977B1 (en) * | 1997-02-26 | 2002-07-23 | Kabushiki Kaisha Toshiba | Pattern size evaluation apparatus |
| CN1348594A (en) * | 1998-12-10 | 2002-05-08 | 国际商业机器公司 | Method for forming transparent conductive film by using chemically amplified resist |
| CN1811598A (en) * | 2005-01-25 | 2006-08-02 | 中国科学院微电子研究所 | Method for flexibly controlling electron beam lithography development time through layout design |
| CN102566327A (en) * | 2010-12-08 | 2012-07-11 | 无锡华润上华科技有限公司 | Developing uniformity debugging method |
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