CN107634044A - A kind of high-power SIP gold tin welding encapsulating structure and method for packing - Google Patents
A kind of high-power SIP gold tin welding encapsulating structure and method for packing Download PDFInfo
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- CN107634044A CN107634044A CN201710831108.9A CN201710831108A CN107634044A CN 107634044 A CN107634044 A CN 107634044A CN 201710831108 A CN201710831108 A CN 201710831108A CN 107634044 A CN107634044 A CN 107634044A
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- pipe cap
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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Abstract
The present invention relates to a kind of high-power SIP gold tin welding encapsulating structure, including Can, ceramic circuit piece, power chip, bead, microstrip transmission line and pipe cap, the Can is the shell structure that top has opening, ceramic circuit piece is welded with the inner bottom surface of the Can, power chip is also welded with the inner bottom surface of the Can of the ceramic circuit piece side, the bead inserts from the side wall of Can side, the microstrip transmission line inserts from the side wall of Can opposite side, the power chip respectively with ceramic circuit piece, bead and microstrip transmission line electrical connection, the pipe cap is fixed on the opening of Can；Also disclose its method for packing.The advantage of the invention is that：It is used as solder by AuSn20 between part to be sealed, using the interface of the abundant permeable member of the capillarity of solder, forms the welding of densification, good sealing effectiveness is obtained, so as to ensure that the air-tightness of SIP encapsulating structures.
Description
Technical field
The present invention relates to technical field of electronic encapsulation, particularly a kind of high-power SIP gold tin welding encapsulating structure and encapsulation
Method.
Background technology
SIP is encapsulated（System In a Package system in package）, it is to realize multiple functions in same encapsulating products
Height function intergrant.SIP encapsulation technologies mainly have plastic packaging and pottery to seal at present, and plastic packaging process is simple, and cost is low, are easy to automatic
Change, but air-tightness is poor, bad mechanical property, to the unshielded effect of electromagnetic wave, the objectionable impurities contained in plastics influences tube core
Cleanliness factor, but die sinking cost is relatively low, technique is simple, is now widely used for the civilian goods communications field；Pottery envelope can meet gas
Close property, but technics comparing is complicated, die sinking cost is high, cycle length, is applied primarily to military products field at present.In some special applications
Occasion, to the high-air-tightness of product, high temperature tolerance and high-termal conductivity propose very high requirement, are badly in need of a kind of technique and solve high gas
Close property, high temperature tolerance and high-termal conductivity problem.
The content of the invention
The shortcomings that it is an object of the invention to overcome prior art, there is provided a kind of high-air-tightness, high-termal conductivity and highly reliable
High-power the SIP gold tin welding encapsulating structure and method for packing of property.
The purpose of the present invention is achieved through the following technical solutions：A kind of high-power SIP gold tin welding encapsulating structure, including
Can, ceramic circuit piece, power chip, bead, microstrip transmission line and pipe cap, the Can are that top has opening
Shell structure, ceramic circuit piece is welded with the inner bottom surface of the Can, in the ceramic circuit piece side
Can inner bottom surface on be also welded with power chip, the bead inserts from the side wall of Can side, institute
Microstrip transmission line is stated to insert from the side wall of Can opposite side, the power chip respectively with ceramic circuit piece, bead and micro-
Band transmission line electrically connects, and the pipe cap is fixed on the opening of Can.
Further, the power chip is bonded electrical connection, the power chip with ceramic circuit piece by a spun gold
Electrical connection is bonded with the inner wire of bead by another spun gold.
Further, the power chip is GaN power chips.
Further, the surface of the pipe cap is provided with step, and the step is identical with Can open top shape, pipe
When cap is fixed on the opening of Can, in the open top of the step insertion Can.
A kind of method for packing of described high-power SIP gold tin welding encapsulating structure, comprises the following steps：
It is S1, gold-plated：Equably plate the layer gold that thickness is 4~8um respectively in the outer surface of Can and the outer surface of pipe cap；
S2, fixed ceramic circuit piece：Uniformly coating a layer thickness is 0.05~0.12 mm on the inner bottom surface of Can
AuSn20 solders；The placing ceramic circuit wafer on AuSn20 solders, and the ceramic circuit piece and metal tube that will be fixed together
Shell is placed in temperature setting and 45~90s is toasted in the thermal station of 287.5~292.5 DEG C of high temperature, takes out natural cooling；
S3, fixed bead：The AuSn20 solders that a layer thickness is 0.2~0.8 mm are uniformly coated in the outer surface of bead, by glass
It is fixed in the mounting hole of pearl insertion Can, and the bead being fixed together and Can are placed in temperature setting and existed
45~90s is toasted in the thermal station of 287.5~292.5 DEG C of high temperature, takes out natural cooling；
S4, the inner wire of bead and ceramic circuit piece are welded by AuSn20 solders；
S5, constant power chip：It is 0.05~0.12 mm that a layer thickness is evenly coated with the chip reserved place of Can
AuSn20 solders, GaN power chips in placement, and whole cavity is put into baking oven toast under 285~295 DEG C of high temperature
50~60min takes out；
S6, bonding electrical connection：In GaN power chips and the inner wire of ceramic circuit piece and bead by being bonded 25 um spun gold
Electrical connection；
S7, fixed pipe cap：The AuSn20 solders after melting are coated along the edge of pipe cap top bar, pipe cap is tight with Can
It is placed in after closely connected conjunction in the thermal station that temperature is 295~305 DEG C, applies certain pressure to pipe cap, treat 15~30s of solder fusing
Afterwards, take out the product being packaged together and be placed in normal temperature natural cooling.
Further, before step S2, in addition to the step of cleaning Can, pipe cap and ceramic circuit piece：By metal
Shell, pipe cap and ceramic circuit piece are individually placed in aqueous isopropanol, and 10~20min is cleaned with ultrasonic wave.
Further, before step S7, in addition to the step of cleaning pipe cap：Pipe cap is placed in alcoholic solution, with ultrasound
Ripple cleans 10~20min, and baking oven is put into after taking-up, 20~30min is toasted at a temperature of 80~100 DEG C, then cleaned with alcohol swab
The edge and step of pipe cap.
The present invention has advantages below：
1st, in SIP encapsulation process is carried out, solder is used as by AuSn20 between part and sealed, utilizes the capillary of solder
The interface of abundant permeable member is acted on, the welding of densification is formed, obtains good sealing effectiveness, so as to ensure that SIP encapsulation knots
The air-tightness of structure.
2nd, important component of the high-power SIP products as Microwave radio frequency system, high-air-tightness, high-termal conductivity and Gao Ke
It is very urgent always by the demand of property, therefore development of the development of the present invention to the high power electronic product of civil and military is all extremely
Close important.It can promote the technological revolution of high-power SIP products significantly, lead highly reliable large power SIP developing direction,
The benign upgrading in direction and development driven the industry to Quality advance, cost reduction.
3rd, the present invention is applied to various radars, electronic countermeasure, and the Microwave radio frequency system such as communicate, especially suitable for power,
Air-tightness and the high large-scale microwave system of reliability requirement, such as airborne High-Power Microwave interference system, technically in state
Interior top standard, and technological reserve can be provided for high power high reliability SIP industrialization productions.
Brief description of the drawings
Fig. 1 is the overlooking the structure diagram of the present invention（Remove pipe cap）；
Fig. 2 is the internal structure schematic diagram of the present invention；
Fig. 3 is the tube cap structure schematic diagram of the present invention；
In figure：1- Cans, 2- ceramic circuit pieces, 3- power chips, 4- beads, 5- microstrip transmission lines, 6- spun golds, 7- pipes
Cap, 8- steps.
Embodiment
The present invention will be further described with reference to the accompanying drawings and examples, but protection scope of the present invention is not limited to
It is as described below.
【Embodiment 1】：
As depicted in figs. 1 and 2, a kind of high-power SIP gold tin welding encapsulating structure, including Can 1, ceramic circuit piece 2, work(
Rate chip 3, bead 4, microstrip transmission line 5 and pipe cap 7, the Can 1 is the shell structure that top has opening, described
Ceramic circuit piece 2 is welded with the inner bottom surface of Can 1, in the Can 1 of the side of ceramic circuit piece 2
Power chip 3 is also welded with bottom surface, the bead 4 inserts from the side wall of the side of Can 1, the microstrip transmission line
5 insert from the side wall of the opposite side of Can 1, the power chip 3 respectively with ceramic circuit piece 2, bead 4 and microstrip transmission line
5 electrical connections, the pipe cap 7 are fixed on the opening of Can 1.
Further, the power chip 3 is bonded electrical connection by a spun gold 6 with ceramic circuit piece 2 as shown in Figure 1,
The power chip 3 is bonded electrical connection by another spun gold 6 with the inner wire of bead 4.
Preferably, the power chip 3 is GaN power chips.
Further, as shown in figure 3, the surface of the pipe cap 7 is provided with step 8, the step 8 and the top of Can 1
Opening shape is identical, and when pipe cap 7 is fixed on the opening of Can 1, the step 8 is embedded in the open top of Can 1
It is interior.
A kind of method for packing of described high-power SIP gold tin welding encapsulating structure, comprises the following steps：
It is S1, gold-plated：Equably plate the layer gold that thickness is 4um respectively in the outer surface of Can 1 and the outer surface of pipe cap 7；
S2, fixed ceramic circuit piece 2：Uniformly coating a layer thickness is 0.12 mm's on the inner bottom surface of Can 1
AuSn20 solders；The placing ceramic circuit wafer 2 on AuSn20 solders, and the ceramic circuit piece 2 and metal tube that will be fixed together
Shell 1 is placed in temperature setting and 90s is toasted in the thermal station of 292.5 DEG C of high temperature, takes out natural cooling；
S3, fixed bead 4：The AuSn20 solders that a layer thickness is 0.2 mm are uniformly coated in the outer surface of bead 4, by bead 4
Insert in the mounting hole of Can 1 and fix, and the bead 4 being fixed together and Can 1 are placed in temperature setting and existed
45s is toasted in the thermal station of 287.5 DEG C of high temperature, takes out natural cooling；
S4, the inner wire of bead 4 and ceramic circuit piece 2 are welded by AuSn20 solders；
S5, constant power chip 3：It is 0.12 mm's that a layer thickness is evenly coated with the chip reserved place of Can 1
AuSn20 solders, GaN power chips in placement, and whole cavity is put into baking oven, 60min is toasted under 295 DEG C of high temperature and is taken
Go out；
S6, bonding electrical connection：In GaN power chips and the inner wire of ceramic circuit piece 2 and bead 4 by being bonded 25 um gold
Silk 6 electrically connects；
S7, fixed pipe cap 7：The AuSn20 solders after melting are coated along the edge of the top bar 8 of pipe cap 7, by pipe cap 7 and metal tube
Shell 1 is placed in after being brought into close contact in the thermal station that temperature is 305 DEG C, is applied certain pressure to pipe cap 7, after solder fusing 30s, is taken
Go out the product being packaged together and be placed in normal temperature natural cooling.
Further, before step S2, in addition to the step of cleaning Can 1, pipe cap 7 and ceramic circuit piece 2：By gold
Category shell 1, pipe cap 7 and ceramic circuit piece 2 are individually placed in aqueous isopropanol, and 20min is cleaned with ultrasonic wave.
Further, before step S7, in addition to the step of cleaning pipe cap 7：Pipe cap 7 is placed in alcoholic solution, with super
Sound wave cleans 10min, is put into baking oven after taking-up, 20min is toasted at a temperature of 100 DEG C, then the edge of pipe cap 7 is cleaned with alcohol swab
With step 8.
【Embodiment 2】：
The structure of the present embodiment is the same as embodiment 1.
A kind of method for packing of described high-power SIP gold tin welding encapsulating structure, comprises the following steps：
It is S1, gold-plated：Equably plate the layer gold that thickness is 6um respectively in the outer surface of Can 1 and the outer surface of pipe cap 7；
S2, fixed ceramic circuit piece 2：Uniformly coating a layer thickness is 0.09 mm's on the inner bottom surface of Can 1
AuSn20 solders；The placing ceramic circuit wafer 2 on AuSn20 solders, and the ceramic circuit piece 2 and metal tube that will be fixed together
Shell 1 is placed in temperature setting and 65s is toasted in the thermal station of 290 DEG C of high temperature, takes out natural cooling；
S3, fixed bead 4：The AuSn20 solders that a layer thickness is 0.5 mm are uniformly coated in the outer surface of bead 4, by bead 4
Insert in the mounting hole of Can 1 and fix, and the bead 4 being fixed together and Can 1 are placed in temperature setting 290
70s is toasted in the thermal station of DEG C high temperature, takes out natural cooling；
S4, the inner wire of bead 4 and ceramic circuit piece 2 are welded by AuSn20 solders；
S5, constant power chip 3：It is 0.8mm's that a layer thickness is evenly coated with the chip reserved place of Can 1
AuSn20 solders, GaN power chips in placement, and whole cavity is put into baking oven, 55min is toasted under 290 DEG C of high temperature and is taken
Go out；
S6, bonding electrical connection：In GaN power chips and the inner wire of ceramic circuit piece 2 and bead 4 by being bonded 25 um gold
Silk 6 electrically connects；
S7, fixed pipe cap 7：The AuSn20 solders after melting are coated along the edge of the top bar 8 of pipe cap 7, by pipe cap 7 and metal tube
Shell 1 is placed in after being brought into close contact in the thermal station that temperature is 300 DEG C, is applied certain pressure to pipe cap 7, after solder fusing 23s, is taken
Go out the product being packaged together and be placed in normal temperature natural cooling.
Further, before step S2, in addition to the step of cleaning Can 1, pipe cap 7 and ceramic circuit piece 2：By gold
Category shell 1, pipe cap 7 and ceramic circuit piece 2 are individually placed in aqueous isopropanol, and 15min is cleaned with ultrasonic wave.
Further, before step S7, in addition to the step of cleaning pipe cap 7：Pipe cap 7 is placed in alcoholic solution, with super
Sound wave cleans 15min, is put into baking oven after taking-up, 25min is toasted at a temperature of 90 DEG C, then the edge of pipe cap 7 is cleaned with alcohol swab
With step 8.
【Embodiment 3】：
The structure of the present embodiment is the same as embodiment 1.
A kind of method for packing of described high-power SIP gold tin welding encapsulating structure, comprises the following steps：
It is S1, gold-plated：Equably plate the layer gold that thickness is 8um respectively in the outer surface of Can 1 and the outer surface of pipe cap 7；
S2, fixed ceramic circuit piece 2：Uniformly coating a layer thickness is 0.05mm's on the inner bottom surface of Can 1
AuSn20 solders；The placing ceramic circuit wafer 2 on AuSn20 solders, and the ceramic circuit piece 2 and metal tube that will be fixed together
Shell 1 is placed in temperature setting and 45s is toasted in the thermal station of 287.5 DEG C of high temperature, takes out natural cooling；
S3, fixed bead 4：The AuSn20 solders that a layer thickness is 0.8 mm are uniformly coated in the outer surface of bead 4, by bead 4
Insert in the mounting hole of Can 1 and fix, and the bead 4 being fixed together and Can 1 are placed in temperature setting and existed
90s is toasted in the thermal station of 292.5 DEG C of high temperature, takes out natural cooling；
S4, the inner wire of bead 4 and ceramic circuit piece 2 are welded by AuSn20 solders；
S5, constant power chip 3：It is 0.05mm's that a layer thickness is evenly coated with the chip reserved place of Can 1
AuSn20 solders, GaN power chips in placement, and whole cavity is put into baking oven, 50min is toasted under 285 DEG C of high temperature and is taken
Go out；
S6, bonding electrical connection：In GaN power chips and the inner wire of ceramic circuit piece 2 and bead 4 by being bonded 25 um gold
Silk 6 electrically connects；
S7, fixed pipe cap 7：The AuSn20 solders after melting are coated along the edge of the top bar 8 of pipe cap 7, by pipe cap 7 and metal tube
Shell 1 is placed in after being brought into close contact in the thermal station that temperature is 295 DEG C, is applied certain pressure to pipe cap 7, after solder fusing 15s, is taken
Go out the product being packaged together and be placed in normal temperature natural cooling.
Further, before step S2, in addition to the step of cleaning Can 1, pipe cap 7 and ceramic circuit piece 2：By gold
Category shell 1, pipe cap 7 and ceramic circuit piece 2 are individually placed in aqueous isopropanol, and 10min is cleaned with ultrasonic wave.
Further, before step S7, in addition to the step of cleaning pipe cap 7：Pipe cap 7 is placed in alcoholic solution, with super
Sound wave cleans 20min, is put into baking oven after taking-up, 30min is toasted at a temperature of 80 DEG C, then the edge of pipe cap 7 is cleaned with alcohol swab
With step 8.
【Embodiment 4】：
The structure of the present embodiment is the same as embodiment 1.
A kind of method for packing of described high-power SIP gold tin welding encapsulating structure, comprises the following steps：
It is S1, gold-plated：Equably plate the layer gold that thickness is 5um respectively in the outer surface of Can 1 and the outer surface of pipe cap 7；
S2, fixed ceramic circuit piece 2：Uniformly coating a layer thickness is 0.9 mm's on the inner bottom surface of Can 1
AuSn20 solders；The placing ceramic circuit wafer 2 on AuSn20 solders, and the ceramic circuit piece 2 and metal tube that will be fixed together
Shell 1 is placed in temperature setting and 80s is toasted in the thermal station of 292.5 DEG C of high temperature, takes out natural cooling；
S3, fixed bead 4：The AuSn20 solders that a layer thickness is 0.4 mm are uniformly coated in the outer surface of bead 4, by bead 4
Insert in the mounting hole of Can 1 and fix, and the bead 4 being fixed together and Can 1 are placed in temperature setting 289
60s is toasted in the thermal station of DEG C high temperature, takes out natural cooling；
S4, the inner wire of bead 4 and ceramic circuit piece 2 are welded by AuSn20 solders；
S5, constant power chip 3：It is 0.10mm's that a layer thickness is evenly coated with the chip reserved place of Can 1
AuSn20 solders, GaN power chips in placement, and whole cavity is put into baking oven, 54min is toasted under 285 DEG C of high temperature and is taken
Go out；
S6, bonding electrical connection：In GaN power chips and the inner wire of ceramic circuit piece 2 and bead 4 by being bonded 25 um gold
Silk 6 electrically connects；
S7, fixed pipe cap 7：The AuSn20 solders after melting are coated along the edge of the top bar 8 of pipe cap 7, by pipe cap 7 and metal tube
Shell 1 is placed in after being brought into close contact in the thermal station that temperature is 302 DEG C, is applied certain pressure to pipe cap 7, after solder fusing 22s, is taken
Go out the product being packaged together and be placed in normal temperature natural cooling.
Further, before step S2, in addition to the step of cleaning Can 1, pipe cap 7 and ceramic circuit piece 2：By gold
Category shell 1, pipe cap 7 and ceramic circuit piece 2 are individually placed in aqueous isopropanol, and 17min is cleaned with ultrasonic wave.
Further, before step S7, in addition to the step of cleaning pipe cap 7：Pipe cap 7 is placed in alcoholic solution, with super
Sound wave cleans 13min, is put into baking oven after taking-up, 22min is toasted at a temperature of 90 DEG C, then the edge of pipe cap 7 is cleaned with alcohol swab
With step 8.
Although the present invention is described in detail with reference to the foregoing embodiments, for those skilled in the art,
It can still modify to the technical scheme described in foregoing embodiments, or which part technical characteristic is carried out etc.
With replacing, within the spirit and principles of the invention, any modification, equivalent substitution and improvements made etc., this should be included in
Within the protection domain of invention.
Claims (7)
- A kind of 1. high-power SIP gold tin welding encapsulating structure, it is characterised in that：Including Can（1）, ceramic circuit piece（2）、 Power chip（3）, bead（4）, microstrip transmission line（5）And pipe cap（7）, the Can（1）There is the shell of opening for top Body structure, in the Can（1）Inner bottom surface on be welded with ceramic circuit piece（2）, in the ceramic circuit piece（2） The Can of side（1）Inner bottom surface on be also welded with power chip（3）, the bead（4）From Can（1）One The side wall insertion of side, the microstrip transmission line（5）From Can（1）The side wall insertion of opposite side, the power chip（3）Point Not with ceramic circuit piece（2）, bead（4）And microstrip transmission line（5）Electrical connection, the pipe cap（7）It is fixed on Can（1）'s Opening.
- A kind of 2. high-power SIP gold tin welding encapsulating structure according to claim 1, it is characterised in that：The power core Piece（3）Pass through a spun gold（6）With ceramic circuit piece（2）Bonding electrical connection, the power chip（3）Pass through another spun gold （6）With bead（4）Inner wire bonding electrical connection.
- A kind of 3. high-power SIP gold tin welding encapsulating structure according to claim 1, it is characterised in that：The power core Piece（3）For GaN power chips.
- A kind of 4. high-power SIP gold tin welding encapsulating structure according to claim 1, it is characterised in that：The pipe cap（7） Surface be provided with step（8）, the step（8）With Can（1）Open top shape is identical, pipe cap（7）It is fixed on metal Shell（1）Opening when, the step（8）Embedded Can（1）Open top in.
- 5. a kind of method for packing of high-power SIP gold tin welding encapsulating structure as described in Claims 1 to 4 any one, its It is characterised by：Comprise the following steps：It is S1, gold-plated：In Can（1）Outer surface and pipe cap（7）Equably to plate thickness respectively be 4~8um for outer surface Layer gold；S2, fixed ceramic circuit piece（2）：In Can（1）Inner bottom surface on uniform coating a layer thickness be 0.05~ 0.12 mm AuSn20 solders；The placing ceramic circuit wafer on AuSn20 solders（2）, and the ceramic circuit that will be fixed together Piece（2）And Can（1）It is placed in temperature setting and 45~90s is toasted in the thermal station of 287.5~292.5 DEG C of high temperature, takes out certainly So cooling；S3, fixed bead（4）：In bead（4）Outer surface uniformly coat a layer thickness be 0.2~0.8 mm AuSn20 weld Material, by bead（4）Insert Can（1）Mounting hole in fixed, and the bead that will be fixed together（4）And Can （1）It is placed in temperature setting and 45~90s is toasted in the thermal station of 287.5~292.5 DEG C of high temperature, takes out natural cooling；S4, bead（4）Inner wire and ceramic circuit piece（2）Welded by AuSn20 solders；S5, constant power chip（3）：In Can（1）Chip reserved place at be evenly coated with a layer thickness for 0.05~ 0.12 mm AuSn20 solders, GaN power chips in placement, and whole cavity is put into baking oven, in 285~295 DEG C of high temperature 50~60min of lower baking takes out；S6, bonding electrical connection：In GaN power chips and ceramic circuit piece（2）And bead（4）Inner wire by being bonded 25 um Spun gold（6）Electrical connection；S7, fixed pipe cap（7）：Along pipe cap（7）Top bar（8）Edge coat melt after AuSn20 solders, by pipe cap（7） With Can（1）It is placed in after being brought into close contact in the thermal station that temperature is 295~305 DEG C, to pipe cap（7）Apply certain pressure, After 15~30s of solder fusing, take out the product being packaged together and be placed in normal temperature natural cooling.
- 6. method for packing according to claim 5, it is characterised in that：Before step S2, in addition to cleaning Can （1）, pipe cap（7）With ceramic circuit piece（2）The step of：By Can（1）, pipe cap（7）With ceramic circuit piece（2）It is individually placed to In aqueous isopropanol, 10~20min is cleaned with ultrasonic wave.
- 7. method for packing according to claim 5, it is characterised in that：Before step S7, in addition to cleaning pipe cap（7）Step Suddenly：By pipe cap（7）It is placed in alcoholic solution, cleans 10~20min with ultrasonic wave, baking oven is put into after taking-up, in 80~100 DEG C of temperature Degree 20~30min of lower baking, then clean pipe cap with alcohol swab（7）Edge and step（8）.
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| CN108878375A (en) * | 2018-06-25 | 2018-11-23 | 中国电子科技集团公司第四十研究所 | A kind of floor structure suitable for microwave power chip welding |
| CN109650323A (en) * | 2018-12-24 | 2019-04-19 | 烟台艾睿光电科技有限公司 | A kind of solder isolation structure and electronic device |
| CN110474140A (en) * | 2019-09-06 | 2019-11-19 | 中国电子科技集团公司第二十六研究所 | A kind of microwave signal transmission device with airtight construction |
| CN111599689A (en) * | 2020-05-27 | 2020-08-28 | 上海芯波电子科技有限公司 | Double-sided cavity digging ceramic packaging process based on WB chip |
| CN112349656A (en) * | 2020-09-28 | 2021-02-09 | 中国电子科技集团公司第二十九研究所 | System-in-package structure and manufacturing method thereof |
| CN114423271A (en) * | 2021-09-30 | 2022-04-29 | 中国船舶重工集团公司第七二四研究所 | Method for sealing cap by gold and tin for airtight electronic packaging |
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| CN204497227U (en) * | 2015-04-27 | 2015-07-22 | 锦州辽晶电子科技有限公司 | High-voltage high-power inverter module |
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