CN107611249B

CN107611249B - Electrical, mechanical, computing, and/or other devices formed from very low resistance materials

Info

Publication number: CN107611249B
Application number: CN201710850006.1A
Authority: CN
Inventors: D·J·吉尔伯特; Y·E·施泰恩; M·J·史密斯; J·P·哈纳; P·格林兰德; B·考帕; F·诺斯
Original assignee: Ambature Inc
Current assignee: Ambature Inc
Priority date: 2011-03-30
Filing date: 2012-03-30
Publication date: 2021-11-30
Anticipated expiration: 2032-03-30
Also published as: CN105264680B; CN107611249A; CN105264680A

Abstract

Electrical, mechanical, computing, and/or other devices are described that include components formed from Extremely Low Resistance (ELR) materials, including but not limited to modified ELR materials, laminated ELR materials, and novel ELR materials.

Description

Electrical, mechanical, computing, and/or other devices formed from very low resistance materials

The present application is a divisional application filed on 3/30/2012, with application number 201280044226.0 entitled "electrical, mechanical, computing and/or other devices formed of very low resistance material".

Cross Reference to Related Applications

The present application claims priority from: U.S. provisional patent applications, application nos. 61/469,283, 61/469,567, 61/469,571, 61/469,573, and 61/469,576, entitled "extreme Low Resistance Nanowires"; U.S. provisional patent applications, application nos. 61/469,293, 61/469,580, 61/469,584, 61/469,585, 61/469,586, 61/469,589, 61/469,590, and 61/469,592, entitled "indicators for eddy Current Low Resistance Materials";

U.S. provisional patent application Ser. Nos. 61/469,303, 61/469,591, 61/469,595, 61/469,600, 61/469,602, 61/469,605, 61/469,609, 61/469,613, 61/469,618, and 61/469,652 entitled "Capacitors Formed of extreme Low Resistance Materials"; U.S. provisional patent applications, application nos. 61/469,313, 61/469,620, 61/469,622, 61/469,627, 61/469,630, 61/469,632, 61/469,635, 61/469,640, and 61/469,645 entitled "transmissions for extensive Resistance Low Resistance Materials"; U.S. provisional patent applications, application nos. 61/469,318, 61/469,599, 61/469,604, 61/469,608, 61/469,612, 61/469,617, 61/469,619, 61/469,624, and 61/469,628, entitled "rolling machinery for media extrusion Low Resistance Materials"; U.S. provisional patent applications, application Nos. 61/469,324, 61/469,637, 61/469,641, and 61/469,644 entitled "Bearings Assemblies for memory outside examination Low Resistance Materials; U.S. provisional patent application Ser. Nos. 61/469,331 and 61/469,650 entitled "Transforrmedof extreme LowResistensince materials";

U.S. provisional patent application Ser. Nos. 61/469,335, 61/469, 656,61/469,658, 61/469,659, and 61/469,662 entitled "Power Transmission Components for media examination Low resistance materials"; U.S. provisional patent application Ser. Nos. 61/469,342, 61/469,667, 61/469,679, 61/469,684, and 61/469,769 entitled "Fault Current Limiter for extensive Low Resistance Materials"; U.S. provisional patent applications, application nos. 61/469,358, 61/469,603, 61/469,606, 61/469,610, 61/469,615, 61/469,621, 61/469,625, 61/469,633, 61/469,639, 61/469,642, 61/469,653, 61/469,657, 61/469,665, and 61/469,668 entitled "MRI Components and Apparatus Employing expression examination Low Resistance Materials"; U.S. provisional patent application Ser. Nos. 61/469,361, 61/469,623, 61/469,634, 61/469,643, and 61/469,648 entitled "extreme Low Resistance Josephson joints"; U.S. provisional patent applications, application nos. 61/469,363, 61/469,655, 61/469,660, 61/469,666, 61/469,671, 61/469,675, 61/469,678, 61/469,685, and 61/469,691 entitled "extreme Low Resistance quantity Interference Devices"; U.S. provisional patent applications, application Nos. 61/469,367, 61/469,697, 61/469,700, 61/469,703, 61/469,704, and 61/469,710 entitled "antenna for from extreme Resistance Low Resistance Materials"; U.S. provisional patent applications, application nos. 61/469,371, 61/469,717, 61/469,721, 61/469,727, 61/469,731, 61/469,735, 61/469,740, and 61/469,756 entitled "Filters for expression Low Resistance Materials"; U.S. provisional patent application, application nos. 61/469,398, 61/469,654, 61/469,673, 61/469,683, 61/469,687, 61/469,692, 61/469,711, 61/469,716, 61/469,723, 61/469,638, 61/469,646, 61/469,728, 61/469,737, 61/469,743, 61/469,745, 61/469,751, 61/469,754, 61/469,761, 61/469,766, 61/469,770, 61/469,772, 61/469,774, and 61/469,775 entitled "Sensors for extensive emission Materials"; U.S. provisional patent application Ser. Nos. 61/469,401, 61/469,672, 61/469,674, 61/469,676, and 61/469,681 entitled "activators for death exhaust Low Resistance Materials"; U.S. provisional patent applications, application nos. 61/469,376, 61/469,686, 61/469,690, 61/469,693, 61/469,694, 61/469,695, 61/469,696, and 61/469,698 entitled "Integrated Circuits for media exit Low Resistance Materials"; U.S. provisional patent Applications, application Nos. 61/469,392, 61/469,707, 61/469,709, and 61/469,712 entitled "Extreme Low Resistance Interconnect (ELRI) For System In Package (SIP) Applications"; U.S. provisional patent applications, application nos. 61/469,424, 61/469,714, 61/469,718, 61/469,720, 61/469,724, 61/469,726, and 61/469,730 entitled "Extreme Low Resistance Interconnect (ELRI) Connecting MEMS to circuit Semiconductor IC"; U.S. provisional patent applications, application nos. 61/469,387, 61/469,732, 61/469,736, and 61/469,739 entitled "Extreme Low Resistance Interconnect (ELRI) for RF Circuit Semiconductor Integrated Circuit"; U.S. provisional patent applications, application Nos. 61/469,554, 61/469,742, 61/469,744, 61/469,747, 61/469,749, and 61/469,750 entitled "Integrated Circuit Devices for memory outside Resistance Low Resistance Materials"; U.S. provisional patent application Ser. Nos. 61/469,560, 61/469,753, 61/469,755, 61/469,757, 61/469,758, 61/469,759, 61/469,760, 61/469,762, and 61/469,763 entitled "Energy Storage Devices Formed of extreme Low Resistance Materials"; and U.S. provisional patent application Ser. No. 13/076,188 entitled "extreme Low Resistance Compositions and methods for Creating same

Each of the above applications was filed 3, 30/2011. Each of the above applications is hereby incorporated by reference herein in its entirety.

The present application also claims U.S. provisional patent application entitled "laid Compositions, schas Compositions which is at least one extreme equation Low Resistance" filed on 6.1.2012, priority application No. 61/583,855, the entire contents of which are hereby incorporated herein by reference.

Background

Electrical, mechanical, computational and/or other equipment that operates using conventional superconducting elements has various drawbacks, including reliance on expensive cooling systems to maintain the superconducting elements in their superconducting state. For example, conventional superconducting capacitors utilize High Temperature Superconducting (HTS) materials for various components, relying on their ability to transmit current with minimal or zero resistance to current flow. HTS materials, however, require very low operating temperatures (e.g., temperatures below 120K), which are typically achieved by cooling these components to such temperatures using expensive systems (e.g., liquid nitrogen based cooling systems). Such cooling systems increase implementation costs and prevent widespread commercial and consumer use and/or application of capacitors employing these materials. These and other problems exist with current HTS-based devices.

Drawings

Fig. 1 shows the crystal structure of an exemplary ELR material from a first perspective.

Fig. 2 shows the crystal structure of an exemplary ELR material from a second perspective.

Fig. 3 shows the crystal structure of an exemplary ELR material from a second perspective.

Fig. 4 shows a single unit cell of an exemplary ELR material.

Fig. 5 shows the crystal structure of an exemplary ELR material from a second perspective.

Fig. 6 shows the crystal structure of an exemplary ELR material from a second perspective.

Fig. 7 shows the crystal structure of an exemplary ELR material from a second perspective.

Fig. 8 shows the crystal structure of an exemplary ELR material from a second perspective.

Fig. 9 shows the crystal structure of an exemplary ELR material from a second perspective.

Fig. 10 illustrates a modified crystal structure of an ELR material according to various implementations of the invention, viewed from a second perspective.

Fig. 11 illustrates a modified crystal structure of an ELR material according to various implementations of the invention, viewed from a first perspective.

Fig. 12 shows the crystal structure of an exemplary ELR material from a third perspective.

FIG. 13 illustrates a coordinate system used to describe various implementations of the present invention.

FIGS. 14A-14G show test results demonstrating various operating characteristics of the modified ELR material.

Fig. 15 shows the results of testing the modified ELR material, i.e., chromium as the modifying material and YBCO as the ELR material.

Fig. 16 shows the results of testing the modified ELR material, i.e. vanadium as the modifying material and YBCO as the ELR material.

FIG. 17 shows the results of testing modified ELR materials, i.e., bismuth as the modifying material and YBCO as the ELR material

Fig. 18 shows the results of testing the modified ELR material, i.e., copper as the modifying material and YBCO as the ELR material.

Fig. 19 shows the results of testing the modified ELR material, i.e., cobalt as the modifying material and YBCO as the ELR material.

Fig. 20 shows the results of testing the modified ELR material, i.e., titanium as the modifying material and YBCO as the ELR material.

Fig. 21A-21B show the results of testing modified ELR materials, i.e., chromium as the modifying material and BSCCO as the ELR material.

FIG. 22 illustrates an arrangement of ELR materials and modifying materials for transporting charge according to various implementations of the invention.

FIG. 23 illustrates a multilayer crystal structure of an exemplary surface modified ELR material in accordance with various implementations of the invention.

Fig. 24 illustrates a c-film of ELR material according to various implementations of the invention.

Fig. 25 illustrates a c-film with a suitable surface of ELR material according to various implementations of the invention.

Fig. 26 illustrates a c-film with a suitable surface of ELR material according to various implementations of the invention.

FIG. 27 illustrates a modified material laminated to a suitable surface of an ELR material in accordance with various implementations of the invention.

FIG. 28 illustrates a modified material laminated to a suitable surface of an ELR material in accordance with various implementations of the invention.

FIG. 29 illustrates a c-film having an etched surface including an appropriate surface of ELR material in accordance with various implementations of the invention.

FIG. 30 illustrates a modified material laminated to an etched surface of a c-film with an appropriate surface of ELR material in accordance with various implementations of the invention.

FIG. 31 illustrates an a-b film with an appropriate surface of ELR material including an optional substrate in accordance with various implementations of the invention.

FIG. 32 illustrates a modified material laminated to a suitable surface of an ELR material of an a-b film in accordance with various implementations of the invention.

Fig. 33 illustrates various exemplary arrangements of layers of ELR materials, modifying materials, buffer or insulating layers, and/or substrates according to various implementations of the invention.

FIG. 34 illustrates a process for forming a modified ELR material in accordance with various implementations of the invention.

FIG. 35 illustrates an example of additional processing that may be performed in accordance with various implementations of the invention.

FIG. 36 illustrates a process for forming a modified ELR material in accordance with various implementations of the invention.

1-Z are block diagrams of combinations including very low material components and modification components according to various implementations of the invention.

Fig. 2-Z is a block diagram of a combination including a very low resistance material and two or more modifying components according to various implementations of the invention.

Fig. 3-Z is a block diagram of an assembly including different layers of very low resistance material according to various implementations of the invention.

Fig. 4-Z is a block diagram of an assembly of layers including different forms of the same very low resistance material according to various implementations of the invention.

Fig. 5-Z is a block diagram of an assembly including multiple layers of different very low resistance materials according to various implementations of the invention.

Fig. 6-Z is a block diagram of an exemplary assembly including multiple layers of very low resistance material according to various implementations of the invention.

Figures 7A-Z through 7I-Z include test results that demonstrate various operating characteristics of the exemplary combination shown in figure 6-Z.

Fig. 37-a to 45B-a illustrate the formation of nanowires using ELR materials.

Fig. 46-a to 46J-a illustrate formation of Josephson Junctions (JJs) using ELR materials.

FIGS. 47-A to 53-A illustrate the formation of SQUIDs using ELR materials.

Detailed Description

Electrical, mechanical, computing, and/or other devices, components, systems, and/or apparatus are described that include one or more components formed from modified, apertured, laminated, and/or other new Extremely Low Resistance (ELR) materials. For currents at higher temperatures than those typically associated with High Temperature Superconductor (HTS) currents, ELR materials provide extremely low resistance, improving the performance characteristics of the devices at these higher temperatures, and other advantages.

In some examples, the ELR material is fabricated according to the type of material, the application of the ELR material, the dimensions of the component in which the ELR material is employed, the operating requirements of the equipment or machine in which the ELR material is employed, and so forth. Also, during design and manufacture of the device, the material used as the base layer of the ELR material and/or the material used as one or more modification layers of the ELR material may be selected based on various considerations and desired operational and/or manufacturing characteristics.

Various devices, applications, and/or systems may employ the ELR assembly described herein. These devices, applications, and/or systems will be discussed in more detail below.

Techniques will now be described with respect to various examples and/or embodiments. The following description provides specific details for a thorough understanding and enabling description of these examples of the system. However, it will be understood by those skilled in the art that the system may be practiced without these details. In other instances, well-known structures and functions have not been shown or described in detail to avoid unnecessarily obscuring the description of the examples of the system.

Even if used in conjunction with a detailed description of certain specific embodiments of the system, the terminology used in the description presented below is intended to be interpreted in its broadest reasonable manner. Some of the following terms may even be emphasized; however, any terms intended to be interpreted in any limited manner will be overtly and specifically defined as such in this detailed description section.

Various features, advantages and implementations of the invention may be set forth or apparent from consideration of the following detailed description, drawings and claims. It should be understood that the detailed description and drawings are exemplary and are intended to provide further explanation without limiting the scope of the invention unless set forth in the claims.

For the purposes of this description, very low resistance ("ELR") materials may include: superconducting materials, including, but not limited to, HTS materials; ideal conductive materials (e.g., ideal conductors) and other conductive materials with very low resistance. As discussed herein, these ELR materials may be described as modified ELR materials, perforated ELR materials, and/or new ELR materials, any of which may be used to form ELR films and/or other ELR components (e.g., nanowires, wires, ribbons, etc.). At high temperatures, for example temperatures above 150K, at ambient or standard pressure, these ELR materials exhibit very low electrical resistance to electrons and/or very high conductivity to electrons. For example, this section describes the structural and operational characteristics of these ELR materials.

In general, various implementations of the invention relate to incorporating ELR materials having improved operating characteristics (e.g., modified ELR materials, new ELR materials, etc.) or ELR materials exhibiting some or all of the improved operating characteristics described herein into various products, systems, and/or devices as described herein. Various implementations of the invention may include such ELR materials in the form of ELR films, ELR tapes, ELR nanowires, ELR wires, and other configurations of such ELR materials.

For the purposes of this description, various implementations of the invention and/or with respect to the operating characteristics of the ELR material may include, but are not limited to, the resistance of the ELR material in its ELR state (e.g., with respect to a superconductor, a superconducting state), the transition temperature of the ELR material for its ELR state, the charge transport capability of the ELR material in its ELR state, one or more magnetic properties of the ELR material, one or more mechanical properties of the ELR material, and/or other operating characteristics of the ELR material. Also, for purposes of this description, improved operating characteristics may include, but are not limited to, operation in an ELR state (including, for example, a superconducting state) at a higher temperature, operation with increased charge transport capability at the same (or higher) temperature, operation with improved magnetic properties, operation with improved mechanical properties, and/or other improved operating characteristics.

For the purposes of this description, "very low resistance" is a resistance similar in number to the flux flow resistance of a type II superconducting material in its superconducting state, and can be expressed generally in terms of resistivity as a function of zero ohm-cm to at 293KThe pure copper has a resistivity in the range of one fiftieth (1/50) of the resistivity. For example, as used herein, substantially pure is 99.999% copper. In various implementations of the invention, the ELR material portion has a thickness in the range of zero ohm-cm to 3.36x10^-8Resistivity in the ohm-centimeter range.

As is generally understood, the transition temperature is the temperature below which the ELR material "works" or exhibits (or begins to exhibit) a very low resistance and/or other phenomena associated with the ELR material. When operating with very low resistance, the ELR material is said to be in the ELR state. At temperatures above the transition temperature, the ELR material no longer exhibits very low resistance and the ELR material is said to be in its non-ELR or normal state. In other words, the transition temperature corresponds to the temperature at which the ELR material changes between its non-ELR state and its ELR state. As will be appreciated, for some ELR materials, the transition temperature may be a temperature range over which the ELR material changes between its non-ELR state and its ELR state. As will also be appreciated, the ELR material may have a hysteresis of its transition temperature, with one transition temperature when the ELR material is warm and another transition temperature when the ELR material is cool.

FIG. 13 illustrates a coordinate system 1300 that can be used to describe various implementations of the invention. Coordinate system 1300 includes sets of axes referred to as the a-axis, b-axis, and c-axis. For the purposes of this description: the reference a-axis includes the a-axis and any other axis parallel thereto; the reference b-axis includes the b-axis and any other axis parallel thereto; and the c-axis of reference includes the c-axis and any other axis parallel thereto. The respective pairs of axes form sets of planes in the coordinate system 1300, referred to as a-plane, b-plane, and c-plane, where: the a surface is formed by a b axis and a c axis and is perpendicular to the a axis; the b surface is formed by an a axis and a c axis and is perpendicular to the b axis; and the c-plane is formed by the a-axis and the b-axis and is perpendicular to the c-axis. For purposes of description: the reference a-plane includes an a-plane and an arbitrary plane parallel thereto; the reference b-plane comprises a b-plane and any plane parallel to the b-plane; and the reference c-plane includes the c-plane and an arbitrary plane parallel thereto. Moreover, with respect to each "face" or "surface" of the crystalline structure described herein, the face parallel to the a-face is sometimes referred to as the "b-c" face; the plane parallel to the b-plane is sometimes referred to as the "a-c" plane; and the plane parallel to the c-plane is sometimes referred to as the "a-b" plane.

Fig. 1 shows the crystal structure 100 of an exemplary ELR material viewed from a first perspective, i.e., a perspective perpendicular to the "a-b" plane of the crystal structure 100 and parallel to its c-axis. Fig. 2 shows crystal structure 100 from a second perspective, i.e., perpendicular to the "b-c" plane of crystal structure 100 and parallel to its a-axis. For the purposes of this description, the exemplary ELR materials shown in FIGS. 1 and 2 generally represent various ELR materials. In some implementations of the invention, exemplary ELR materials may be representative of a family of superconducting materials known as mixed-valence copper oxide perovskites. Materials of mixed-valence copper oxide perovskites include, but are not limited to, LaBaCuOx, LSCO (e.g., La2-xSrxCuO4, etc.), YBCO (e.g., YBa2Cu3O7, etc.), BSCCO (e.g., Bi2Sr2Ca2Cu3O10, etc.), TBCCO (e.g., Tl2Ba2Ca2Cu3O10 or TlmBa2Can-1CunO2n + m +2+8), HgBa2Ca2Cu3Ox, and other mixed-valence copper oxide perovskite materials. As will be appreciated, other mixed-valence copper oxide perovskite materials may include, but are not limited to, various substitutions of cations. As will also be appreciated, the foregoing references to mixed-valence copper oxide perovskite materials may refer to a general class of materials in which many different ratios exist. In some implementations of the invention, exemplary ELR materials may include HTS materials outside the family of mixed-valence copper oxide perovskite materials ("non-perovskite materials"). Such non-perovskite materials may include, but are not limited to, iron phosphorus family elenides, magnesium diboride (MgB2), and other non-perovskites. In some implementations of the invention, the exemplary ELR material may be other superconducting materials.

As will be appreciated, many ELR materials have a structure similar to (although not necessarily identical to) crystal structure 100, with crystal structure 100 having different atoms, combinations of atoms, and/or lattice arrangements. As shown in fig. 2, crystal structure 100 is depicted with two complete unit cells of the exemplary ELR material, one above reference line 110 and one below reference line 110. Fig. 4 shows a single unit cell 400 of an exemplary ELR material.

In general, and as will be appreciated, the unit cell 400 of the exemplary ELR material includes six "faces": two "a-b" faces parallel to the c-face; two "a-c" faces parallel to the b-face; and two "b-c" planes parallel to the a-plane (see, e.g., fig. 13). As will also be appreciated, a "surface" of an ELR material in a macroscopic sense may include a plurality of unit cells 400 (e.g., hundreds, thousands, or more). Reference in this specification to a "surface" or "face" of the ELR material being parallel to a particular face (e.g., a-face, b-face, or c-face) means that the surface is formed primarily (mostly) by the faces of the unit cell 400 that are substantially parallel to that particular face. Furthermore, reference in this specification to a "surface" or "face" of the ELR material being parallel to a face other than the a-face, b-face or c-face (e.g., the ab-face, as described below, etc.) means that the surface is formed by some of the mixing faces of the unit cell 400, which in a general macroscopic sense form a surface that is substantially parallel to these other faces.

Studies have shown that some ELR materials demonstrate a dependence of anisotropy (i.e., directionality) of the resistance phenomenon. In other words, the resistance at a given temperature and current density depends on the direction with respect to the crystal structure 100. For example, in their ELR state, at very low resistance, some ELR materials are able to carry significantly more current in the direction of the c-axis than these materials, in the direction of the a-axis and/or in the direction of the b-axis. As will be appreciated, various ELR materials exhibit anisotropy of various performance phenomena, including resistance phenomena in directions different from, in addition to, or in combination with those directions described above. For the purposes of this description, reference to a material that tends to exhibit a resistive phenomenon (and similar language) in a first direction indicates that the material supports such a phenomenon in the first direction; and references to a material that tends not to exhibit a resistive phenomenon (and similar language) in the second direction indicate that the material does not support such a phenomenon in the second direction or supports such a phenomenon in a reduced manner relative to other directions.

Referring to fig. 2, conventional understanding of known ELR materials has heretofore failed to understand the pores 210 formed by the plurality of pore atoms 250 in the crystal structure 100, which is responsible for the formation of the resistance phenomenon. (see, e.g., fig. 4, where holes are not readily apparent in the depicted single unit cell 400.) in a sense, hole atoms 250 can be viewed as forming discrete atom "boundaries" or "perimeters" around holes 210. In some implementations of the invention, and as shown in fig. 2, the hole 210 is present between the first portion 220 and the second portion 230 of the crystal structure 100, but in some implementations of the invention, the hole 210 may be present in other portions of various other crystal structures. Based on describing atoms as simple "spheres," holes 210 are shown in FIG. 2; it will be understood that such pores are related to and shaped by the electrons of the various atoms in crystal structure 100, including pore atoms 250, and their associated electron densities (not otherwise shown), among others.

According to various aspects of the present invention, the pores 210 facilitate charge transport through the crystal structure 100, and the ELR material operates in its ELR state when the pores 210 facilitate charge transport through the crystal structure 100. For purposes of this description, "transmit," "transmitting," and/or "facilitating transmission" (along with their respective forms) generally refers to "conducting," "conducting," and/or "facilitating conduction," and their respective forms; "transport", "in transit" and/or "to facilitate transport" and their respective forms; "guide," "guiding," and/or "aiding in guiding," and their respective forms; and/or "carry," "carrying," and/or "facilitate carrying," as well as their respective forms. For purposes of this description, charge may include positive or negative charge, and/or pairs or other groupings of such charge; moreover, such charges may be transported through the crystal structure 100 in the form of one or more particles or in the form of one or more waves or wave packets.

In some implementations of the invention, the charge transport through the crystal structure 100 may be in a manner similar to waveguide transport. In some implementations of the invention, the aperture 210 may be a waveguide associated with the transport of charge through the crystal structure 100. Waveguides and their operation are generally well understood. In particular, the walls around the interior of the waveguide may correspond to the boundaries or perimeter of the hole atoms 250 around the hole 210. One aspect associated with the operation of the waveguide is its cross-section. At the atomic level, the pores 210 and/or their cross-sections may vary substantially with changes in temperature of the ELR material. For example, in some implementations of the invention, a change in temperature of the ELR material may cause a change in the aperture 210, which in turn may cause the ELR material to transition between its ELR state and its non-ELR state. For example, as the temperature of the ELR material increases, the pores 210 may limit or impede charge transport through the crystal structure 100 and the corresponding ELR material may transition from its ELR state to its non-ELR state. Likewise, for example, as the temperature of the ELR material decreases, the pores 210 may facilitate (as opposed to limiting or impeding) charge transport through the crystal structure 100 and the corresponding ELR material may transition from its non-ELR state to its ELR state.

Holes (such as hole 210 in fig. 2) are present in various ELR materials, such as, but not limited to, the various ELR materials shown in fig. 3 and fig. 5-9, etc., and described below. As shown, such pores are inherent to the crystal structure of some or all of the ELR material. As will be appreciated, from such a description, various forms, shapes, sizes, and numbers of holes 210 are present in the ELR material, depending on the precise configuration of the crystal structure, atomic composition, and arrangement of atoms within the crystal structure of the ELR material.

The presence and absence of pores 210 extending through the crystal structure 100 of various ELR materials in the direction of the various axes is consistent with the dependence of anisotropy exhibited by such ELR materials. For example, the ELR material 360 shown in FIGS. 3, 11, and 12 corresponds to YBCO-123, which exhibits resistance phenomena in the directions of the a-axis and the b-axis, but tends not to exhibit resistance phenomena in the direction of the c-axis. Consistent with the anisotropic dependence of the resistance phenomenon exhibited by YBCO-123, fig. 3 shows that the holes 310 extend through the crystal structure 300 in the direction of the a-axis; fig. 12 shows that the

holes

310 and 1210 extend through the crystal structure 300 in the direction of the b-axis; and fig. 11 shows that no suitable holes extend through the crystal structure 300 in the direction of the c-axis.

Pores 210 and/or cross-sections thereof may depend on various atomic characteristics of pore atoms 250 and/or "non-pore atoms" (i.e., atoms in crystal structure 100 other than pore atoms 250). Such atomic characteristics include, but are not limited to, atomic size, atomic weight, number of electrons, electronic structure, number of bonds, type of bonds, different bonds, multiple bonds, bond length, bond strength, bond angle between pore atoms and non-pore atoms, and/or isotopic number. The pore atoms 250 and non-pore atoms may be selected based on their respective atomic characteristics to optimize the pores 210 with respect to their size, shape, stiffness, and vibrational modes (in terms of amplitude, frequency, and direction) associated with the crystal structure and/or the atoms therein.

According to various implementations of the invention, changes in the physical structure of the hole 210, including changes to the shape and/or size of its cross-section and/or changes to the shape or size of the hole atoms 205, may affect the resistive phenomenon. For example, as the temperature of the crystal structure 100 increases, the cross-section of the pores 210 may change due to vibration and changes in energy states of various atoms in the crystal structure 100, or occupation thereof by atoms in the crystal structure 100. Physical bending, stretching, or compression of the crystal structure 100 may also affect the position of individual atoms in the crystal structure 100 and thus the cross-section of the pores 210. The magnetic field applied to the crystal structure 100 may also affect the position of individual atoms in the crystal structure 100 and thus the cross-section of the hole 210.

The phonons correspond to various vibration modes in the crystal structure 100. Phonons in the crystal structure 100 may interact with charges transported through the crystal structure 100. More specifically, phonons in the crystal structure 100 may cause atoms (e.g., pore atoms 250, non-pore atoms, etc.) in the crystal structure 100 to interact with charges transported through the crystal structure 100. Higher temperatures result in higher phonon amplitudes and may result in increased interactions between phonons, atoms in the crystal structure 100, and such charges. Various implementations of the present invention may minimize, reduce, or otherwise modify such interactions between phonons, atoms in the crystal structure 100, and such charges in the crystal structure 100.

Fig. 3 shows a crystal structure 300 of an exemplary ELR material 360 from a second perspective. The exemplary ELR material 360 is a superconducting material commonly referred to as "YBCO," which, in certain formulations, has a transition temperature of about 90K. Specifically, the exemplary ELR material 360 shown in FIG. 3 is YBCO-123. The crystal structure 300 of the exemplary ELR material 360 includes various atoms of yttrium ("Y"), barium ("Ba"), copper ("Cu"), and oxygen ("O"). As shown in fig. 3, in the crystal structure 300, pores 310 are formed through the pore atoms 350 (i.e., atoms of yttrium, copper, and oxygen). The cross-sectional distance between yttrium pore atoms in pores 310 is about 0.389nm, the cross-sectional distance between oxygen pore atoms in pores 310 is about 0.285nm, and the cross-sectional distance between copper pore atoms in pores 310 is about 0.339 nm.

Fig. 12 shows a crystal structure 300 of an exemplary ELR material 360 from a third perspective. Similar to that described above with respect to fig. 3, the exemplary ELR material 360 is YBCO-123 and, in the crystal structure 300, pores 310 are formed through the pore atoms 350 (i.e., atoms of yttrium, copper, and oxygen). In this orientation, the cross-sectional distance between yttrium pore atoms in pores 310 is about 0.382nm, the cross-sectional distance between oxygen pore atoms in pores 310 is about 0.288nm, and the cross-sectional distance between copper pore atoms in pores 310 is about 0.339 nm. In this orientation, the crystalline structure 300 of the exemplary ELR material 360 includes apertures 1210 in addition to apertures 310. The holes 1210 occur in the direction of the b-axis of the crystal structure 300. More specifically, the apertures 1210 occur between individual unit cells of the exemplary ELR material 360 in the crystal structure 300. In crystal structure 300, pores 1210 are formed through pore atoms 1250 (i.e., atoms of barium, copper, and oxygen). The distance of the cross-section between barium pore atoms 1250 in the pores 1210 is about 0.430nm, the distance of the cross-section between oxygen pore atoms 1250 in the pores 1210 is about 0.382nm, and the distance of the cross-section between copper pore atoms 1250 in the pores 1210 is about 0.382 nm. In some implementations of the invention, the aperture 1210 operates in a similar manner as described herein with respect to the aperture 310. For purposes of this illustration, the pores 310 in YBCO may be referred to as "yttrium pores" and the pores 1210 in YBCO may be referred to as "barium pores" based on the composition of their

respective pore atoms

350, 1250.

Fig. 5 shows the crystal structure 500 of an exemplary ELR material 560 viewed from a second perspective. Exemplary ELR material 560 is an HTS material commonly referred to as "HgBa 2CuO 4" having a transition temperature of about 94K. The crystal structure 500 of the exemplary ELR material 560 includes various atoms of mercury ("Hg"), barium ("Ba"), copper ("Cu"), and oxygen ("O"). As shown in fig. 5, in the crystal structure 500, a pore 510 is formed by a pore atom including atoms of barium, copper, and oxygen.

Fig. 6 shows a crystal structure 600 of an exemplary ELR material 660 from a second perspective. An exemplary ELR material 660 is an HTS material commonly referred to as "Tl 2Ca2Ba2Cu3O 10" having a transition temperature of approximately 128K. The crystal structure 600 of the exemplary ELR material 660 includes various atoms of thallium ("Tl"), calcium ("Ca"), barium ("Ba"), copper ("Cu"), and oxygen ("O"). As shown in fig. 6, in the crystal structure 600, pores 610 are formed by pore atoms including atoms of calcium, barium, copper, and oxygen. Also as shown in fig. 6, in the crystal structure 600, the secondary pores 620 may also be formed by secondary pore atoms including atoms of calcium, copper, and oxygen. Secondary aperture 620 may operate in a similar manner as aperture 610.

Fig. 7 illustrates a crystal structure 700 of an exemplary ELR material 760 from a second perspective. Exemplary ELR material 760 is an HTS material commonly referred to as "La 2CuO4," which has a transition temperature of about 39K. The crystal structure 700 of the exemplary ELR material 760 includes various atoms of lanthanum ("La"), copper ("Cu"), and oxygen ("O"). As shown in fig. 7, in the crystal structure 700, pores 710 are formed by pore atoms including atoms of lanthanum and oxygen.

Fig. 8 illustrates the crystal structure 800 of an exemplary ELR material 860 from a second perspective. An exemplary ELR material 860 is an HTS material commonly referred to as "as2ba0.34fe2k0.66," which has a transition temperature of about 38K. The exemplary ELR material 860 is representative of the family of ELR materials sometimes referred to as "iron phosphorus family elenides". The crystal structure 800 of the exemplary ELR material 860 includes various atoms of arsenic ("As"), barium ("Ba"), iron ("Fe"), and potassium ("K"). As shown in fig. 8, in the crystal structure 800, pores 810 are formed by pore atoms including atoms of potassium and arsenic.

Fig. 9 shows the crystal structure 900 of an exemplary ELR material 960 from a second perspective. An exemplary ELR material 960 is an HTS material commonly referred to as "MgB 2," which has a transition temperature of about 39K. The crystal structure 900 of the exemplary ELR material 960 includes various atoms of magnesium ("Mg") and boron ("B"). As shown in fig. 9, in the crystal structure 900, pores 910 are formed by pore atoms including atoms of magnesium and boron.

The foregoing exemplary ELR materials shown in fig. 3, 5-9, and 12 each indicate the presence of various pores in these materials. Various other ELR materials have similar pores. Once attributed to the resistive phenomenon, the pores and their corresponding crystal structures may be utilized to improve the operating characteristics of existing ELR materials, to obtain improved ELR materials from existing ELR materials, and/or to design and formulate new ELR materials. For ease of description, ELR material 360 (and its accompanying features and structures) is referred to hereinafter generally as various ELR materials, including, but not limited to, ELR material 560, ELR material 660, ELR material 760, and others shown in the figures, and not merely as the ELR materials shown and described with reference to fig. 3.

According to various implementations of the invention, the crystal structure of various known ELR materials may be modified such that the modified ELR materials operate with improved operating characteristics over known and/or unmodified ELR materials. In some implementations of the invention, as will be appreciated, this may also be accomplished, for example, by layering the material on the crystal structure 100 such that atoms of the material traverse the pores 210 by forming one or more bonds between the first portion 220 and the second portion 230. This particular modification to delaminate the material on the crystalline structure 100 is described in more detail below along with various experimental test results.

FIG. 10 illustrates a modified crystal structure 1010 of a modified ELR material 1060 viewed from a second perspective in accordance with various implementations of the invention. FIG. 11 illustrates a modified crystal structure 1010 of a modified ELR material 1060 viewed from a first perspective in accordance with various implementations of the invention. ELR material 360 (e.g., as shown in fig. 3 and elsewhere) is modified to form modified ELR material 1060. The modified material 1020 forms a bond with atoms of the crystal structure 300 (of fig. 3) of the ELR material 360 to form a modified crystal structure 1010 of the modified ELR material 1060 as shown in fig. 11. As shown, the modifying material 1020 bridges the gap between the first portion 320 and the second portion 330, thereby changing at least the vibrational characteristics of the modified crystalline structure 1010, particularly in the region of the aperture 310. In doing so, the modifying material 1020 retains the pores 310 at a higher temperature. Thus, in some implementations of the invention, modifying material 1020 is specifically selected to fit and bond with the appropriate atoms in crystal structure 300.

In some implementations of the invention, and as shown in FIG. 10, a modifying material 1020 is bonded to a face of the crystal structure 300 that is parallel to the b-face (e.g., the "a-c" face). In such implementations where the modifying material 1020 is bonded to the "a-c" face, the hole 310 extending in the direction of the a-axis and having a cross-section at the a-face is retained. In such an implementation, charge carriers flow through the aperture 310 in the direction of the a-axis.

In some implementations of the invention, modifying material 1020 is bonded to a face of crystal structure 300 that is parallel to the a-plane (e.g., the "b-c" plane). In such an implementation where the modifying material 1020 is bonded to the "b-c" face, the hole 310 extending in the direction of the b-axis and having a cross section located at the b-face is maintained. In such an implementation, charge carriers flow through the hole 310 in the direction of the b-axis.

Various implementations of the invention include layering a particular surface of ELR material 360 with modifying material 1020 (i.e., modifying a particular surface of ELR material 360 with modifying material 1020). As will be appreciated from the present description, reference to a "modified surface" of the ELR material 360 ultimately includes modifying a face (and in some cases, more than one face) of one or more unit cells 400 of the ELR material 360. In other words, the modifying material 1020 is actually bonded to atoms in the unit cell 400 of the ELR material 360.

For example, modifying the surface of the ELR material 360 parallel to the a-plane includes modifying the "b-c" plane of the unit cell 400. Likewise, modifying the surface of the ELR material 360 parallel to the b-plane includes modifying the "a-c" plane of the unit cell 400. In some implementations of the invention, the modifying material 1020 is bonded to a surface of the ELR material 360 that is substantially parallel to any plane parallel to the c-axis. For purposes of illustration, the plane parallel to the c-axis is generally referred to as the ab-plane and, as will be appreciated, includes the a-plane and the b-plane. As will be appreciated, the surface of the ELR material 360 parallel to the ab-plane is formed by some mix of the "a-c" and "b-c" planes of the unit cell 400. In such an implementation where the modifying material 1020 is bonded to the surface parallel to the ab-plane, the hole 310 extending in the a-axis direction and the hole 310 extending in the b-axis direction are maintained.

In some implementations of the invention, the modifying material 1020 can be a conductive material. In some implementations of the invention, modifying material 1020 may be a material with a high oxygen affinity (i.e., a material that readily bonds to oxygen) ("oxygen-bonding material"). In some implementations of the invention, modifying material 1020 may be a conductive material that readily bonds to oxygen ("oxygen-bonded conductive material"). Such oxygen-bonded conductive materials may include, but are not limited to: chromium, copper, bismuth, cobalt, vanadium and titanium. Such oxygen-bonded conductive materials may also include, but are not limited to: rhodium or beryllium. Other modifying materials may include gallium or selenium. Other modifying materials may include silver. Other modifying materials may also be used.

In some implementations of the invention, the oxide of the modifying material 1020 may be formed during various operations associated with the modified ELR material 360 having the modifying material 1020. Thus, in some implementations of the invention, modifying material 1020 may include modifying material 1020 in substantially pure form and/or various oxides of modifying material 1020. In other words, in some implementations of the invention, ELR material 360 is modified with modifying material 1020 and/or various oxides of modifying material 1020. By way of example, and not limitation, in some implementations of the invention, modifying material 1020 may include chromium and/or chromium oxide (CrxOy).

In some implementations of the invention, ELR material 360 may be YBCO and modified material 1020 may be an oxygen-bonded conductive material. In some implementations of the invention, ELR material 360 may be YBCO and modifying material 1020 may be selected from the group including, but not limited to: chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium or beryllium. In some implementations of the invention, ELR material 360 may be YBCO and modifying material 1020 may be selected from the group consisting of chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium, and beryllium. In some implementations of the invention, ELR material 360 may be YBCO and modifying material 1020 may be another modifying material.

In some implementations of the invention, various other combinations of mixed-valence copper oxide perovskite materials and oxygen-bonded conductive materials may be used. For example, in some implementations of the invention, ELR material 360 corresponds to a mixed-valence copper oxide perovskite material commonly referred to as "BSCCO. BSCCO includes atoms of bismuth ("Bi"), strontium ("Sr"), calcium ("Ca"), copper ("Cu"), and oxygen ("O"). BSCCO itself has a transition temperature of about 100K. In some implementations of the invention, ELR material 360 may be BSCCO and modifying material 1020 may be an oxygen-bonded conductive material. In some implementations of the invention, ELR material 360 may be BSCCO and modifying material 1020 may be selected from the group including, but not limited to: chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium or beryllium. In some implementations of the invention, ELR material 360 may be BSCCO and modifying material 1020 may be selected from the group consisting of chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium, and beryllium. In some implementations of the invention, ELR material 360 may be BSCCO and modifying material 1020 may be another modifying material.

In some implementations of the invention, various combinations of other ELR materials and modifying materials may be used. For example, in some implementations of the invention, the ELR material 360 corresponds to an iron-phosphorus family element material. The iron phosphide family element itself has a transition temperature ranging from about 25-60K. In some implementations of the invention, ELR material 360 may be an iron phosphorus group element and modifying material 1020 may be an oxygen bonded conductive material. In some implementations of the invention, ELR material 360 may be an iron phosphorus family compound and modifying material 1020 may be selected from the group including, but not limited to: chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium or beryllium. In some implementations of the invention, ELR material 360 may be an iron phosphorus family of elemental compounds and modifying material 1020 may be selected from the group consisting of chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium, and beryllium. In some implementations of the invention, ELR material 360 may be an iron phosphorus family of elemental compounds and modifying material 1020 may be another modifying material.

In some implementations of the invention, various combinations of other ELR materials and modifying materials may be used. For example, in some implementations of the invention, the ELR material 360 may be magnesium diboride ("MgB 2"). Magnesium diboride itself has a transition temperature of about 39K. In some implementations of the invention, the ELR material 360 may be magnesium diboride and the modifying material 1020 may be an oxygen bonded conductive material. In some implementations of the invention, ELR material 360 may be magnesium diboride and modifying material 1020 may be selected from the group including, but not limited to: chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium or beryllium. In some implementations of the invention, ELR material 360 may be magnesium diboride and modifying material 1020 may be selected from the group consisting of chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium, and beryllium. In some implementations of the invention, ELR material 360 may be magnesium diboride and modifying material 1020 may be another modifying material.

In some implementations of the invention, as will be appreciated, the modified material 1020 may be laminated to a sample of the ELR material 360 using various techniques for laminating one component to another. For example, such lamination techniques include, but are not limited to, pulsed laser deposition, evaporation (including co-evaporation, electron beam evaporation, and activated reactive evaporation), sputtering (including magnetron sputtering, ion beam sputtering, and ion assisted sputtering), cathodic arc deposition, CVD, organometallic CVD, plasma-enhanced CVD, molecular beam epitaxy, sol-gel processes, liquid phase epitaxy, and/or other lamination techniques. In some implementations of the invention, ELR material 360 may be laminated to a sample of modified material 1020 using various techniques for laminating one component to another. In some implementations of the invention, a single unit layer of modifying material 1020 (i.e., a layer of modifying material 1020 having a thickness substantially equal to the thickness of a single unit (atom or molecule) of modifying material 1020) may be laminated to a sample of ELR material 360, in some implementations of the invention, a single unit layer of modifying material (i.e., a layer of modifying material having a thickness substantially equal to a single unit of modifying material (e.g., atom, molecule, crystal, or other unit)) may be laminated to a sample of ELR material, hi some implementations of the invention, the ELR material may be laminated to a single unitary layer of modifying material, hi some implementations of the invention, in some implementations of the invention, the ELR material can be laminated to two or more unit layers of the modifying material.

In some implementations of the invention, the modified ELR material 360 with the modified material 1020 retains the pores 310 in the modified ELR material 1060 at a temperature about or above the boiling point of nitrogen. In some implementations of the invention, the pores 310 are maintained at a temperature about or above the boiling point of carbon dioxide. In some implementations of the invention, the pores 310 are maintained at a temperature about or above the boiling point of ammonia. In some implementations of the invention, the pores 310 are maintained at a temperature about or above the boiling point of the various formulations of freon. In some implementations of the invention, the pores 310 are maintained at a temperature about or above the melting point of water. In some implementations of the invention, the pores 310 are maintained at a temperature about or above the melting point of the solution of water and antifreeze. In some implementations of the invention, the aperture 310 is maintained at a temperature about or above room temperature (e.g., 21 ℃). In some implementations of the invention, the aperture 310 is maintained at a temperature about or above a temperature selected from one of the following group of temperatures: 150K, 160K, 170K, 180K, 190K, 200K, 210K, 220K, 230K, 240K, 250K, 260K, 270K, 280K, 290K, 300K, 310K. In some implementations of the invention, the aperture 310 is maintained over a temperature range of 150K to 315K.

Fig. 14A-14G show test results 1400 obtained as described above. Test results 1400 include a plot of the resistance of the modified ELR material 1060 as a function of temperature (in K). More specifically, test result 1400 corresponds to modified ELR material 1060, where modified material 1020 corresponds to chromium and where ELR material 360 corresponds to YBCO. FIG. 14A includes test results 1400 for measuring the resistance of the modified ELR material 1060 over the complete temperature range, i.e., 84K to 286K. To provide further details, the test results 1400 are divided into different temperature ranges and illustrated. Specifically, fig. 14B shows those test results 1400 over a temperature range from 240K to 280K; FIG. 14C shows those test results 1400 over a temperature range from 210K to 250K; FIG. 14D shows those test results 1400 over a temperature range from 180K to 220K; FIG. 14E shows those test results 1400 over a temperature range from 150K to 190K; FIG. 14F shows those test results 1400 over a temperature range from 120K to 160K; and fig. 14G shows those test results 1400 over a temperature range from 84.5K to 124.5K.

Test results 1400 show that various portions of the modified ELR material 1060 operate in an ELR state at higher temperatures relative to the ELR material 360. Six samples were obtained for analytical test runs. For each sample analysis test run, the modified ELR material 1060 was slowly cooled from approximately 286K to 83K. Upon cooling, the current source applies a current of +60nA and-60 nA in a delta mode configuration in order to reduce the effects of any DC offset and/or thermocouple effects. At regular time intervals, the voltage across the modified ELR material 1060 is measured by a voltmeter. The test run was analyzed for each sample, using a 512-point fast fourier transform ("FFT") to filter the time series voltage measurements. The almost lowest 44 frequencies from the FFT are eliminated from the data and the filtered data is returned to the time domain. The filtered data from each sample analysis test run is then merged together to produce test results 1400. More specifically, all resistance measurements from six sample analysis test runs are organized into a series of temperature ranges (e.g., 80K-80.25K, 80.25K to 80.50K, 80.5K to 80.75K, etc.) in a manner known as "binning". The resistance measurements for each temperature range are then averaged together to provide an average resistance measurement for each temperature range. These average resistance measurements form test result 1400.

Test results 1400 include various discrete steps 1410 in the resistance versus temperature graph, each of these discrete steps 1410 representing a relatively rapid change in resistance over a relatively narrow temperature range. In each of these discrete steps 1410, a separate portion of the modified ELR material 1060 begins to transport charge at the respective temperature up to the charge transport capability of such portion. To a very small extent, the surface of the modified ELR material 360 is not completely smooth, and thus the exposed pores 310 in the surface of the ELR material 360 do not typically extend across the entire width or length of the sample of the modified ELR material 1060. Thus, in some implementations of the invention, the modified material 1020 covers the entire surface of the ELR material 360 and may serve as a conductor for carrying charge between the pores 310.

Before discussing the test results 1400 in further detail, various characteristics of the ELR material 360 and the modifying material 1020 are discussed. Generally, resistance versus temperature ("R-T") plots of these materials are individually well known. The respective R-T plots for these materials are not considered to include features similar to the discrete steps 1410 found in test results 1400. In fact, an unmodified sample of ELR material 360 and a sample of modified material 1020 were tested separately under similar and generally identical testing and measurement configurations. In each case, the R-T plot of the unmodified sample of ELR material 360 and the R-T plot of the modified material, individually, do not include any features similar to the discrete step 1410. Thus, according to various implementations of the invention, discrete step 1410 is a result of modified ELR material 360 having modified material 1020 to retain pores 310 at increased temperatures, thereby allowing modified material 1060 to remain in the ELR state at such increased temperatures.

At each discrete step 1410, the various holes 310 in the modified ELR material 1060 begin to transmit charge up to the charge transport capability of each hole 310. Each charge-transfer pore 310 appears as a short circuit, dropping a significant amount of voltage across the sample of modified ELR material 1060, as measured by the voltmeter. When the additional holes 310 begin to transport charge until the sample temperature of the modified ELR material 1060 reaches the transition temperature of the ELR material 360 (i.e., the transition temperature of the unmodified ELR material, which in the case of YBCO is about 90K), the apparent voltage continues to drop.

Test results 1400 show that some of the pores 310 in the modified ELR material 1060 transport charge at approximately 97K, 100K, 103K, 113K, 126K, 140K, 146K, 179K, 183.5K, 200.5K, 237.5K, and 250K. As will be appreciated, at other temperatures throughout the temperature range, some of the pores 310 in the modified ELR material 1060 may transport charge.

Test results 1400 include various other relatively rapid changes in resistance over a relatively narrow temperature range that are not otherwise identified as discrete steps 1410. Some of these other variations may correspond to artifacts from data processing techniques on measurements obtained during a test run (e.g., FFT, filtering, etc.). Some of these other changes may correspond to changes in resistance due to the resonant frequency of the modified crystal structure 1010 affecting the hole 310 at various temperatures. Some of these other variations may correspond to additional discrete steps 1410. In addition, the change in resistance over the temperature range of 270-274K is likely related to the water present in the modified ELR material 1060, where some water may have been introduced during preparation of the sample of the modified ELR material 1060.

Test result 1400 differs from the R-T plot of ELR material 360 except for discrete step 1410 in that at temperatures above the transition temperature of ELR material 360, modified material 1020 conducts well, whereas ELR material 360 does not typically conduct.

Fig. 15 shows additional test results 1500 for samples of ELR material 360 and modified material 1020. More specifically, for test result 1500, modified material 1020 corresponds to chromium and ELR material 360 corresponds to YBCO. For test results 1500, samples of ELR material 360 were prepared using the various techniques discussed above to expose the face of the crystalline structure 300 parallel to the a-or b-plane. The test results 1500 were collected using a lock-in amplifier and a K6221 current source, where a current of 10nA at 24.0Hz was applied to the modified ELR material 1060. Test results 1500 include a plot of the resistance of the modified ELR material 1060 as a function of temperature (in K). FIG. 15 includes test results 1500 over the entire temperature range, i.e., 80K to 275K, over which the resistance of the modified ELR material 1060 was measured. Test results 1500 indicate that various portions of the modified ELR material 1060 operate in an ELR state at a higher temperature relative to the ELR material 360. Five sample analytical test runs were performed with samples of the modified ELR material 1060. For each sample analysis test run, the sample of modified ELR material 1060 was slowly warmed from 80K to 275K. While being heated, the voltage across the sample of modified ELR material 1060 was measured at regular time intervals and the resistance was calculated based on the source current. For each sample analysis test run, the time series of resistance measurements were filtered using a 1024 point FFT. The almost lowest 15 frequencies from the FFT are eliminated from the data and the filtered resistance measurement is returned to the time domain. The filtered resistance measurements from each sample analysis test run are then combined together using the grading process described above to yield test results 1500. The resistance measurements for each temperature range are then averaged together to provide an average resistance measurement for each temperature range. These average resistance measurements form test result 1500.

Similar to the discrete steps 1410 discussed above with respect to fig. 14A-14G, the test results 1500 include various discrete steps 1510 in a resistance versus temperature graph, such that each of the discrete steps 1510 represents a relatively rapid change in resistance over a relatively narrow temperature range. At each of these discrete steps 1510, a discrete portion of the modified ELR material 1060 transfers charge up to the charge-transfer capability of that portion at the respective temperature.

Test results 1500 show that at approximately 120K, 145K, 175K, 225K, and 250K, some of the pores 310 in the modified ELR material 1060 transport charge. As will be appreciated, some of the pores 310 in the modified ELR material 1060 may transport charge at other temperatures throughout the temperature range.

Fig. 16-20 show additional test results for samples of ELR material 360 and various modifying materials 1020. For these additional test results, samples of ELR material 360 were prepared using the various techniques discussed above to expose faces of the crystalline structure 300 that were substantially parallel to the a-or b-face, or some combination of the a-or b-faces, and a modifying material was laminated to these exposed faces. Each of these modified samples was slowly cooled from about 300K to 80K. While being heated, the current source applies current in a delta mode configuration through a modified sample as described below. At regular time intervals, the voltage across the modified sample was measured. For each sample analysis test run, the time series voltage measurements are filtered in the frequency domain by removing the nearly lowest frequency using an FFT, and the filtered measurements are returned to the time domain. The number of frequencies maintained is typically different for each data set. The filtered data from each test run is then ranked and averaged together to produce the test results shown in fig. 16-21.

Fig. 16 shows test results 1600 including a plot of the resistance of the modified ELR material 1060 as a function of temperature (in K). For test result 1600, modified material 1020 corresponds to vanadium and ELR material 360 corresponds to YBCO. Test results 1600 were obtained over 11 test runs using a 20nA current source, a 1024 point FFT was performed, and information from almost the lowest 12 frequencies was eliminated. Test results 1600 indicate that various portions of the modified ELR material 1060 operate in the ELR state at higher temperatures relative to the ELR material 360. Similar to those discussed above with respect to fig. 14A-14G, the test results 1600 include individual discrete steps 1610 in the resistance versus temperature graph. Test results 1600 indicate that at approximately 267K, 257K, 243K, 232K, and 219K, some of the pores 310 in the modified ELR material 1060 transport charge. Some of the pores 310 in the modified ELR material 1060 may transport charge at other temperatures.

Fig. 17 shows test results 1700 including a plot of the resistance of the modified ELR material 1060 as a function of temperature (in K). For test result 1700, modified material 1020 corresponds to bismuth and ELR material 360 corresponds to YBCO. Test results 1700 were obtained through 5 test runs using 400nA current sources, a 1024 point FFT was performed, and information from almost the lowest 12 frequencies was eliminated. The test results 1700 indicate that various portions of the modified ELR material 1060 operate in an ELR state at a higher temperature relative to the ELR material 360. Similar to those discussed above with respect to fig. 14A-14G, test results 1700 include various discrete steps 1710 in a resistance versus temperature graph. Test results 1700 show that at approximately 262K, 235K, 200K, 172K, and 141K, some of the pores 310 in the modified ELR material 1060 transport charge. Some of the pores 310 in the modified ELR material 1060 may transport charge at other temperatures.

FIG. 18 shows test results 1800 including a plot of the resistance of the modified ELR material 1060 as a function of temperature (in K). For test results 1800, modified material 1020 corresponds to copper and ELR material 360 corresponds to YBCO. Test results 1800 were obtained over 6 test runs using a current source of 200nA, performing a 1024 point FFT, and eliminating information from the almost lowest 12 frequencies. Test results 1800 indicate that various portions of the modified ELR material 1060 operate in an ELR state at a higher temperature relative to the ELR material 360. Similar to those discussed above with respect to fig. 14A-14G, test results 1800 include individual discrete steps 1810 in the resistance versus temperature graph. Test results 1800 show that at approximately 268K, 256K, 247K, 235K, and 223K, some of the pores 310 in the modified ELR material 1060 transport charge. Some of the pores 310 in the modified ELR material 1060 may transport charge at other temperatures.

Fig. 19 shows test results 1900 including a plot of the resistance of the modified ELR material 1060 as a function of temperature (in K). For test results 1900, modified material 1020 corresponds to cobalt and ELR material 360 corresponds to YBCO. Test results 1900 were obtained through 11 test runs using a 400nA current source, performing a 1024 point FFT, and eliminating information from the almost lowest 12 frequencies. Test results 1900 show that various portions of the modified ELR material 1060 operate in the ELR state at higher temperatures relative to the ELR material 360. Similar to those discussed above with respect to fig. 14A-14G, test results 1900 include various discrete steps 1910 in the resistance versus temperature graph. Test results 1900 show that at approximately 265K, 236K, 205K, 174K, and 143K, some of the pores 310 in the modified ELR material 1060 transport charge. Some of the pores 310 in the modified ELR material 1060 may transport charge at other temperatures.

Fig. 20 shows test results 2000 including a plot of the resistance of the modified ELR material 1060 as a function of temperature (in K). For test result 2000, modified material 1020 corresponds to titanium and ELR material 360 corresponds to YBCO. A test result 2000 was obtained through 25 test runs using a current source of 100nA, a 512 point FFT was performed, and information from almost the lowest 11 frequencies was eliminated. Test results 2000 show that various portions of the modified ELR material 1060 operate in the ELR state at higher temperatures relative to the ELR material 360. Similar to those discussed above with respect to fig. 14A-14G, test results 2000 include various discrete steps 2010 in the resistance versus temperature graph. Test results 2000 show that at approximately 266K, 242K, and 217K, some of the pores 310 in the modified ELR material 1060 transport charge. Some of the pores 310 in the modified ELR material 1060 may transport charge at other temperatures.

Fig. 21A-21B show test results 2100 including plots of the resistance of the modified ELR material 1060 as a function of temperature (in K). For test result 2100, modified material 1020 corresponds to chromium and ELR material 360 corresponds to BSSCO. Fig. 21A includes test results 2100 over the entire temperature range, i.e., 80K to 270K, over which the resistance of the modified ELR material 1060 was measured. To provide further detail, test results 2100 are scaled up over a temperature range of 150K-250K, as shown in FIG. 21B. Test results 2100 are collected in a manner similar to those discussed above with respect to fig. 16-20. In particular, test result 2100 was obtained over 25 test runs using a current source of 300 nA. The data from these test runs were smoothed by Savitzy-Golay using 64-sided points (side points) and a polynomial of order 4. Test results 2100 indicate that various portions of the modified ELR material 1060 operate in an ELR state at a higher temperature relative to ELR material 360 (here BSSCO). Similar to those discussed above with respect to fig. 14A-14G, test results 2100 include various discrete steps 2110 in the resistance versus temperature graph. Test results 2100 indicate that at approximately 184K and 214K, some of the pores in the modified ELR material 1060 transport charge. Some of the pores 310 in the modified ELR material 1060 may transport charge at other temperatures.

In other experiments, the modifying material 1020 was laminated to the surface of the ELR material 360 substantially parallel to the c-plane of the crystal structure 300. These test results (not otherwise specified) indicate that laminating the surface of ELR material 360 parallel to the c-plane with modifying material 1020 does not produce any discrete steps such as those described above (e.g., discrete step 1410). These test results indicate that modifying the surface of the modified ELR material 360 perpendicular to the direction in which the ELR material 360 does not (or tends not) exhibit the resistive phenomenon does not improve the operating characteristics of the unmodified ELR material. In other words, these surface modifications of the ELR material 360 do not retain the pores 310. In accordance with various principles of the present invention, the modifying material should be laminated to a surface of the ELR material parallel to the direction in which the ELR material does not (or tends not) exhibit the resistive phenomenon. More specifically, and for example, with respect to ELR material 360 (shown in fig. 3), to maintain aperture 310, modifying material 1020 should be bonded to the "a-c" or "b-c" faces (which are parallel to the c-axis) of crystal structure 300 in ELR material 360 (which tends not to exhibit a resistive phenomenon in the direction of the c-axis).

Fig. 22 illustrates an arrangement 2200 of alternating layers comprising ELR material 360 and modifying material 1020 for transporting additional charge in accordance with various implementations of the invention. Such layers may be deposited on top of each other using various deposition techniques. Various techniques may be used to improve the alignment of the crystal structure 300 in the various layers of the ELR material 360. Improving the alignment of crystal structure 300 may result in increasing the length of aperture 310 through crystal structure 300, which may provide operation at higher temperatures and/or with increased charge transport capabilities. This arrangement 2200 provides an increased number of holes 310 in the modified ELR material 1060 at each interface between the modified material 1020 and an adjacent layer of ELR material 360. The increased number of holes 310 may increase the charge transport capability of the arrangement 2200.

In some implementations of the invention, any number of layers may be used. In some implementations of the invention, other ELR materials and/or other modifying materials may be used. In some implementations of the invention, additional layers of other materials (e.g., insulators, conductors, or other materials) may be used between pairs of layers of ELR material 360 and modifying material 1020 to mitigate various effects (e.g., magnetic effects, migration of materials, or other effects) or to enhance the properties of modified ELR material 1060 formed in these pairs of layers. In some implementations of the invention, not all layers are paired. In other words, arrangement 2200 may have one or more additional (i.e., unpaired) layers of ELR material 360, or one or more additional layers of modifying material 1020.

FIG. 23 illustrates an additional layer 2310 (illustrated as layer 2310A, layer 2310B, layer 2310C, and layer 2310D) of the modified crystalline structure 1010 in a modified ELR material 1060 in accordance with various implementations of the invention. As shown, modified ELR material 1060 includes individual pores 310 (shown as pores 310A, 310B, and 310C) at different distances into material 1060 from modifying material 1020 that forms bonds with atoms of crystal structure 300 (of fig. 3). Hole 310A is closest to modifying material 1020, followed by hole 310B, which in turn is followed by hole 310C, and so on. According to various implementations of the invention, the effect of modifying material 1020 is greatest with respect to aperture 310A, then lesser with respect to aperture 310B, then lesser with respect to aperture 310C, and so on. According to some implementations of the invention, since hole 310A is proximate to modifying material 1020, modifying material 1020 should better hold hole 310A than hole 310B or hole 310C; likewise, because the hole 310B is proximate the modification material 1020, the modification material 1020 should better hold the hole 310B than the hole 310C, and so on. According to some implementations of the invention, because the hole 310A is proximate the modifying material 1020, the modifying material 1020 should better maintain the cross-section of the hole 310A than the cross-section of either the hole 310B or the hole 310C; likewise, because the hole 310B is proximate the modification material 1020, the modification material 1020 should better maintain the cross-section of the hole 310B than the cross-section of the hole 310C, and so on. According to some implementations of the invention, since hole 310A is proximate to modifying material 1020, modifying material 1020 has a greater effect on the charge transport capability of hole 310A at a particular temperature than on either of hole 310B or hole 310C at that particular temperature; likewise, since the hole 310B is close to the modification material 1020, the modification material 1020 has a greater influence on the charge transport ability of the hole 310B at a specific temperature than on the charge transport ability of the hole 310C at the specific temperature, and so on. According to some implementations of the invention, since the hole 310A is proximate the modification material 1020, the modification material 1020 should enhance charge transport through the hole 310A as compared to charge transport through either of the hole 310B or the hole 310C; likewise, since the pores 310B are proximate the modification material 1020, the modification material 1020 should enhance charge transport through the pores 310B as compared to charge transport through the pores 310C, and so on.

The various test results described above, e.g., test result 1400 of fig. 14, as well as others, support these aspects of various implementations of the invention, i.e., generally, the effect of the modifying material 1020 on the holes 310 varies with respect to their proximity to each other. Specifically, each discrete step 1410 in test results 1400 may correspond to a change in charge carried by the modified ELR material 1060 when those holes 310 in a particular layer 2310 (or more appropriately, those holes 310 formed between adjacent layers 2310 as shown) transmit charge up to the charge-transport capability of such holes 310. Those holes 310 in the layer 2310 that are in close proximity to the modifying material 1020 correspond to discrete steps 1410 at higher temperatures, while those holes 310 in the layer 2310 that are further away from the modifying material 1020 correspond to discrete steps 1410 at lower temperatures. Discrete steps 1410 are "discrete," meaning that pores 310 at a given relative distance from modifying material 1020 (i.e., pores 310A between

layers

2310A and 2310B) transport charge at a particular temperature and quickly reach their maximum charge transport capability. Due to the increased distance and thus the diminished effect of the modifying material 1020 on those pores 310, another discrete step 1410 is reached when the pores 310 with increased distance from the modifying material 1020 (i.e., the pores 310B between

layers

2310B and 2310C) transport charge at lower temperatures. Each discrete step 1410 corresponds to another set of holes 310 that begin to carry charge based on their distance from the modifying material 1020. However, at some distance, the modifying material 1020 may not adequately affect some of the pores 310 to cause them to carry charge at a higher temperature than they would otherwise be; thus, such holes 310 transport charge at a temperature consistent with ELR material 360.

In some implementations of the invention, the distance between the modifying material 1020 and the pores 310 is decreased to increase the effect of the modifying material 1020 on the more porous pores 310. In fact, more holes 310 should transport charge at discrete steps 1410 associated with higher temperatures. For example, in the arrangement 2200 of fig. 22 and in accordance with various implementations of the invention, to reduce the distance between the hole 310 in the ELR material 360 and the modifying material 1020, multiple layers of the ELR material 360 may be fabricated to form only a few unit cells thick. Reducing this distance at a given temperature should increase the number of pores 310 affected by the modifying material 1020. Reducing this distance also increases the number of alternating layers of ELR material 360 in a given total thickness of the arrangement 2200, thereby increasing the overall charge transport capability of the arrangement 2200.

Fig. 24 shows a film 2400 of ELR material 2410 formed on a substrate 2420, although substrate 2420 may not be necessary in various implementations of the invention. In various implementations of the invention, film 2400 can be formed as a ribbon having a length, for example, greater than 10cm, 1m, 1km, or more. Such a tape may be useful, for example, as an ELR conductor or ELR wire. As will be appreciated, while various implementations of the invention are described with reference to ELR films, such implementations can also be applied to ELR tapes.

For illustrative purposes, as shown in fig. 24, film 2400 has a major surface 2430 and a major axis 2440. Major axis 2440 corresponds to an axis extending along the length of film 2400 (relative to the width of film 2400 or the thickness of film 2400). Major axis 2440 corresponds to the major direction in which charge flows through membrane 2400. As shown in fig. 24, major surface 2430 corresponds to a major surface of film 2400, and corresponds to a surface bounded by the width and length of film 2400. It is understood that membrane 2400 may have different lengths, widths, and/or thicknesses without departing from the scope of the present disclosure.

In some implementations of the invention, during fabrication of film 2400, the crystal structure of ELR material 2410 can be oriented such that its c-axis is substantially perpendicular to major surface 2430 of film 2400, and either of the a-axis or b-axis of their respective crystal structures is substantially parallel to major axis 2440. Thus, as shown in FIG. 24, the c-axis is by name for reference, and for purposes of describing various implementations of the present invention, the a-axis and b-axis are not specifically labeled, reflecting their interchangeability. In some fabrication processes of film 2400, the crystal structure of the ELR material may be oriented such that any given line in the c-plane may be substantially parallel to principal axis 2440.

For purposes of illustration, films 2400 having c-axes of their respective crystal structures oriented substantially perpendicular to major surface 2430 (including film 2400 shown in fig. 24) are referred to as "c-films" (i.e., c-films 2400). The C-film 2400 with ELR material 2410 composed of YBCO, for example, is available from American Superconductors TM (e.g., 344 superconductor-type 348C) or Theva D ü nnsichttechnik GmbH (e.g., HTS coated conductor).

As will be understood, in some implementations of the invention, substrate 2420 may comprise a substrate material including, but not limited to, MgO, STO, LSGO, polycrystalline materials such as metals or ceramics, inert oxide materials, cubic oxide materials, rare earth oxide materials, or other substrate materials.

According to various implementations of the invention (and as described in further detail below), the modified material 1020 is laminated to a suitable surface of the ELR material 2410, where the suitable surface of the ELR material 2410 corresponds to any surface that is not substantially perpendicular to the c-axis of the crystal structure of the ELR material 2410. In other words, a suitable surface of the ELR material 2410 may correspond to any surface that is not substantially parallel to the major surface 2430. In some implementations of the invention, a suitable surface of the ELR material 2410 may correspond to any surface that is substantially parallel to the c-axis of the crystal structure of the ELR material 2410. In some implementations of the invention, a suitable surface of the ELR material 2410 may correspond to any surface that is not substantially perpendicular to the c-axis of the crystal structure of the ELR material 2410. To modify the suitable surface of c-film 2400 (with its major surface 2430 substantially perpendicular to the c-axis of the crystal structure of ELR material 2410), a suitable surface of ELR material 2410 may be formed on or within c-film 2400. In some implementations of the invention, major surface 2430 can be treated to expose an appropriate surface of ELR material 2410 on or within c-film 2400 on which the modifying material is laminated. In some implementations of the invention, major surface 2430 can be treated to expose one or more holes 210 of ELR material 2410 on or in c-film 2400 on which the modifying material is laminated. It should be understood that in various implementations of the invention, a modifying material may be laminated to major surface 2430 in addition to the appropriate surfaces mentioned above.

Processing of major surface 2430 of c-film 2400 to expose the appropriate surfaces of ELR material 2410 and/or holes 210 may include various patterning techniques, including various wet or dry processes. Various wet processes may include stripping, chemical etching, or other processes, any of which may include the use of chemicals, and which may expose various other surfaces in c-film 2400. Various dry processes may include ion or electron beam irradiation, laser direct writing, laser ablation, or laser reactive patterning or other processes that may expose various suitable surfaces of the ELR material 2410 and/or the holes 210 in the c-film 2400.

As shown in fig. 25, major surface 2430 of c-film 2400 may be treated to expose an appropriate surface in c-film 2400. For example, c-film 2400 may be processed to expose a face substantially parallel to the b-face of crystal structure 100 in c-film 2400, or a face substantially parallel to the a-face of crystal structure 100 within c-film 2400. More generally, in some implementations of the invention, major surface 2430 of c-film 2400 can be treated to expose an appropriate surface of c-film 2400 that corresponds to the a/bc plane (i.e., the plane substantially parallel to the ab plane). In some implementations of the invention, major surface 2430 of c-film can be treated to expose any face of c-film 2400 that is substantially non-parallel to major surface 2430. In some implementations of the invention, major surface 2430 of c-film can be treated to expose any face of c-film 2400 that is not substantially parallel to major surface 2430 and also is not substantially parallel to major axis 2440. Any of these faces, including combinations of these faces, may correspond to a suitable surface of ELR material 2410 on or within c-film 2400. According to various implementations of the invention, a suitable surface of the ELR material 2410 provides access to or otherwise "exposes" the holes 210 in the ELR material 2410 for the purpose of preserving such holes 210.

In some implementations of the invention, as shown in fig. 25, major surface 2430 is treated to form one or more trenches 2510 in major surface 2430. Trenches 2510 include one or more suitable surfaces (i.e., surfaces substantially parallel to the exterior of major surface 2430) on which to deposit the modifying material. It will be appreciated that while the grooves 2510 are shown in fig. 25 as having a substantially rectangular cross-sectional shape, other shapes of cross-sections may be used. In some implementations of the invention, the width of the trench 2510 may be greater than 10 nm. In some implementations of the invention and as shown in fig. 25, the depth of the trench 2510 may be less than the entire thickness of the ELR material 2410 of the c-film 2400. In some implementations of the invention and as shown in fig. 26, the depth of trench 2510 may be substantially equal to the thickness of ELR material 2410 of c-film 2400. In some implementations of the invention, the depth of the trench 2510 may extend through the ELR material 2410 of the c-film 2400 and into the substrate 2420 (not otherwise shown). In some implementations of the invention, the depth of the trench 2510 may correspond to the thickness of one or more cells of ELR material 2410 (not otherwise shown). Trenches 2510 can be formed in major surface 2430 using various techniques, such as, but not limited to, laser etching or other techniques.

In some implementations of the invention, the length of trench 2510 may correspond to the entire length of c-film 2400. In some implementations of the invention, the grooves 2510 are substantially parallel to each other and substantially parallel to the primary axis 2440. In some implementations of the invention, the grooves 2510 may take on a variety of structures and/or arrangements, in accordance with various aspects of the invention. For example, the groove 2510 may extend in any manner and/or direction, and may include straight lines, curved lines, and/or other geometric shapes in cross-section having varying sizes and/or shapes along its length.

While various aspects of the invention are described as forming trenches 2510 in the major surface 2430, it will be understood that bumps, corners, or protrusions comprising appropriate surfaces of ELR material 2410 may be formed on the substrate 2420 to complete a similar geometry.

According to various implementations of the invention, c-film 2400 can be modified to form various modified c-films. For example, referring to fig. 27, modifying material 2720 (i.e., modifying material 1020) can be laminated onto major surface 2430 and into trenches 2510 formed in major surface 2430 of an unmodified c-film (e.g., c-film 2400), and thus laminated onto various suitable surfaces 2710 to form modified c-film 2700. Suitable surfaces 2710 may include any suitable surface discussed above. While a suitable surface 2710 is shown in fig. 27 as being perpendicular to the major surface 2430, it will be understood from this description that this is not necessary.

In some implementations of the invention, a modifying material 2720 can be laminated onto major surface 2430 and into trench 2510, as shown in fig. 27. In some implementations, such as shown in fig. 28, modifying material 2720 can be removed from major surface 2430 using various techniques (e.g., various polishing techniques) to form modified c-film 2800 such that modifying material 2720 remains only in trenches 2510. In some implementations, the modified c-film 2800 can be completed by laminating the modifying material 2720 only in the trenches 2510. In other words, in some implementations, modifying material 2720 may only be laminated into trenches 2510 and/or onto appropriate surface 2710 without laminating modifying material 2720 onto major surface 2430 or may be laminated such that modifying material 2720 does not bond or otherwise adhere to major surface 2430 (e.g., using various masking techniques). In some implementations of the invention, various selective deposition techniques may be employed to laminate the modified material 2720 directly onto the appropriate surface 2710.

The thickness of modifying material 2720 in trenches 2510 and/or on major surface 2430 can vary according to various implementations of the invention. In some implementations of the invention, a single unit layer of modifying material 2720 (i.e., a layer having a thickness substantially equal to the thickness of the single unit of modifying material 2720) may be laminated onto appropriate surfaces 2710 of trenches 2510 and/or onto major surface 2430. In some implementations of the invention, two or more unit layers of modifying material 2720 may be laminated onto appropriate surfaces 2710 and/or major surface 2430 of trench 2510.

According to various implementations of the invention, modified c films 2700, 2800 (i.e., c film 2400 modified with modifying material 2720) may be used to obtain one or more improved operating characteristics over those of unmodified c film 2400.

As shown in fig. 29, in some implementations of the invention, major surface 2430 of unmodified c-film 2400 can be modified via chemical etching to expose or otherwise increase the area of an appropriate surface 2710 available on major surface 2430. In some implementations of the invention, one way to characterize increased areas of the appropriate surfaces 2710 in the major surface 2430 can be based on the Root Mean Square (RMS) surface roughness of the major surface 2430 of the c-film 2400. In some implementations of the invention, the major surface 2430 of the c-film 2400 can include an etched surface 2910 having a surface roughness in a range of about 1nm to about 50nm as a result of the chemical etching. For example, the RMS surface roughness may be determined using an Atomic Force Microscope (AFM), a Scanning Tunneling Microscope (STM), or an SEM, and may be based on a statistical average of an R range, where it will be understood that the R range may be a range of radii (R) of grain size. After chemical etching, the etched surface 2910 of the c-film 2900 may correspond to the appropriate surface 2710 of the ELR material 2410.

As shown in fig. 30, after chemical etching, a modifying material 2720 can be laminated onto the etched surface 2910 of the c-film 2900 to form a modified c-film 3000. Modified material 2720 may cover substantially all of surface 2910 and the thickness of modified material 2720 may vary according to various implementations of the invention. In some implementations of the invention, a single unit layer of modified material 2720 may be laminated onto etched surface 2910. In some implementations of the invention, two or more unit layers of modified material 2720 may be laminated onto etched surface 2910.

In some implementations of the invention, oriented films having a crystal structure of the ELR material other than the c-film 2400 orientation may be used. For example, referring to fig. 31, and in accordance with various implementations of the invention, for c-film 2400, instead of the c-axis oriented perpendicular to major surface 2430, film 3100 can have a c-axis oriented perpendicular to major axis 2440 and a b-axis oriented perpendicular to ELR material 3110 of major surface 2430. Similarly, film 3100 can have a c-axis oriented perpendicular to major axis 2440 and an a-axis of ELR material 3110 oriented perpendicular to major surface 2430. In some implementations of the invention, the film 3100 may have a c-axis oriented perpendicular to the major axis 2440 and any line parallel to a c-plane oriented along the major axis 2440. As shown in fig. 31, in these implementations of the invention, the film 3100 includes an ELR material 3110 having a c-axis with its crystalline structure oriented perpendicular to a major axis 2440 and parallel to a major surface 3130, and is generally referred to herein as an a-b film 3100. While fig. 31 shows the other two axes of the crystal structure in a particular orientation, as will be appreciated, such orientation is not required. As shown, the a-b membrane 3100 may include an optional substrate 2420 (as with the c-membrane 2400).

In some implementations of the invention, the a-b film 3100 is an a-film having a c-axis of the crystal structure of ELR material 3110 oriented as shown in fig. 31 and an a-axis perpendicular to the major surface 3130. Such a-films may be formed by a variety of techniques, including those described in "High Current Y-Ba-Cu-O Coated Conductor using Metal Organic Chemical Vapor Deposition and Ion Beam Assisted Deposition" by the record of superconducting conferences, Selvaanickam, V.et al, at 2000, days 17-22, Va. In some implementations, the a-film can be grown on a substrate 2420 formed from: LGSO, lasrallo 4, NdCaAlO4, Nd2CuO4 or CaNdAlO 4. As will be appreciated, other substrate materials may be used.

In some implementations of the invention, the a-b film 3100 is a b-film having a c-axis of the crystal structure of ELR material 3110 oriented as shown in fig. 31 and a b-axis perpendicular to the major surface 3130.

According to various implementations of the invention, the major surface 3130 of the a-b film 3100 corresponds to the appropriate surface 2710. In some implementations employing the a-b film 3100, forming a suitable surface of the ELR material 3110 may include forming the a-b film 3100. Thus, for implementations of the invention that include an a-b film 3100, a modifying material 2720 can be laminated onto the major surface 3130 of the a-b film 3100 to yield a modified a-b film 3200 as shown in fig. 32. In some implementations of the invention, the modifying material 2720 may cover, in whole or in part, the major surface 3130 of the a-b film 3100. In some implementations of the invention, the thickness of the modifying material 2720 as discussed above may vary. More specifically, in some implementations of the invention, a single unitary layer of modifying material 2720 may be laminated onto the major surface 3130 of the a-b film 3100; and in some implementations of the invention, two or more unit layers of modifying material 2720 may be laminated onto the major surface 3130 of the a-b film 3100. In some implementations of the invention, for example, the a-b film 3100 may be grooved or otherwise modified as discussed above with respect to the c-film 2400 to increase the overall area of a suitable surface 2710 of the ELR material 3110 on which the modifying material 2720 is laminated.

As will be appreciated, rather than utilizing the a-b film 3100, some implementations of the invention may utilize a layer having ELR material 2410 with its crystal structure oriented in a manner similar to the a-b film 3100.

In some implementations of the invention (not otherwise shown), a cushioning or insulating material may then be laminated onto the modified material 2720 of any of the aforementioned films. In these implementations, the buffer or insulating material and the substrate form a "sandwich structure" with the

ELR materials

2410, 3110 and the modifying material 2720 located therebetween. As will be appreciated, a cushioning or insulating material may be laminated onto the modified material 2720.

Any of the foregoing materials may be laminated to any other material. For example, the ELR material may be laminated to the modifying material. Likewise, the modifying material may be laminated to the ELR material. Further, as will be understood, laminating may include combining, shaping, or depositing one material onto another material. Lamination may use any commonly known lamination technique, including, but not limited to, pulsed laser deposition, evaporation (including co-evaporation, electron beam evaporation, and activated reactive evaporation), sputtering (including magnetron sputtering, ion beam sputtering, and ion assisted sputtering), cathodic arc deposition, CVD, organometallic CVD, plasma enhanced CVD, molecular beam epitaxy, sol-gel processes, liquid phase epitaxy, and/or other lamination techniques.

In various implementations of the invention, multiple layers of

ELR material

2410, 3110, modifying material 2720, buffer or insulating layer, and/or substrate 1120 may be disposed. FIG. 33 illustrates various exemplary arrangements of these layers in accordance with various implementations of the invention. In some implementations, a given layer can include a modifying material 2720 that also serves as a buffer or insulating layer or substrate. As will be understood upon reading this specification, other arrangements or combinations of arrangements may be used. Further, in some implementations of the invention, the various layers of ELR material may have different orientations from one another in a given arrangement. For example, one layer of ELR material in the arrangement may have the a-axis of its crystal structure oriented along the major axis 2440, and another layer of ELR material in the arrangement may have the b-axis of its crystal structure oriented along the major axis 2440. Other orientations may be used in a given arrangement according to various implementations of the invention.

FIG. 34 illustrates a process for creating a modified ELR material in accordance with various implementations of the invention. In operation 3410, an appropriate surface 2710 is formed on or in the ELR material. In some implementations of the invention, the ELR material is present as ELR material 2410 of c-film 2400, with appropriate surface 2710 formed by exposing appropriate surface 2710 on or in major surface 2430 of c-film 2400. In some implementations of the invention, an appropriate surface of the ELR material 2410 may be exposed by modifying the major surface 2430 using any of the wet or dry processing techniques discussed above, or a combination thereof. In some implementations of the invention, the major surface 2430 can be modified by chemical etching as discussed above.

In some implementations of the invention in which ELR material is present as ELR material 3110 of the a-b film 3100 (with or without the substrate 2420), a suitable surface 2710 is formed by laminating the ELR material 3110 (in a suitable orientation as described above) onto the surface, which may or may not include the substrate 2420.

In some implementations of the invention, suitable surfaces 2710 include surfaces of ELR material that are parallel to the ab-plane. In some implementations of the invention, suitable surfaces 2710 include faces of ELR material that are parallel to the b-face. In some implementations of the invention, suitable surfaces 2710 include faces of ELR material that are parallel to the a-plane. In some implementations of the invention, suitable surfaces 2710 include one or more faces of ELR material that are parallel to different ab-faces. In some implementations of the invention, suitable surfaces 2710 include one or more faces that are not substantially perpendicular to the c-axis of the ELR material.

In some implementations of the invention, various optional operations may be performed. For example, in some implementations of the invention, the appropriate surface 2710 or ELR material may be annealed. In some implementations of the invention, the anneal may be a furnace anneal or a Rapid Thermal Processing (RTP) anneal process. In some implementations of the invention, such annealing may be performed in one or more annealing operations within a predetermined time period, temperature range, and other parameters. Further, as will be appreciated, the annealing can be performed in a Chemical Vapor Deposition (CVD) chamber, and can include subjecting the suitable surface 2710 to any combination of temperature and pressure for a predetermined time, which can enhance the suitable surface 2710. Such annealing may be performed in a gas atmosphere and with or without plasma enhancement.

In operation 3420, a modifying material 2720 can be laminated onto one or more suitable surfaces 2710. In some implementations of the invention, the modified material 2720 can be laminated to the appropriate surface 2710 using a variety of lamination techniques, including the various techniques described above.

Fig. 35 illustrates an example of additional processing that may be performed during operation 3420 according to various implementations of the invention. In operation 3510, the appropriate surface 2710 can be polished. In some implementations of the invention, one or more polishes may be used, as discussed above.

In operation 3520, various surfaces other than the appropriate surface 2710 can be masked using any commonly known masking technique. In some implementations, all surfaces except the appropriate surface 2710 may be masked. In some implementations of the invention, one or more surfaces other than the appropriate surface 2710 may be masked.

In operation 3530, modified material 2720 can be laminated (or in some implementations and as shown in fig. 35, deposited on) to an appropriate surface 2710 using any of the generally known lamination techniques discussed above. In some implementations of the invention, MBE may be utilized to deposit modifying material 2720 onto appropriate surface 2710. In some implementations of the invention, PLD may be used to deposit modified material 2720 onto appropriate surface 2710. In some implementations of the invention, CVD may be utilized to deposit the modifying material 2720 onto the appropriate surface 2710. In some implementations of the invention, approximately 40nm of the modifying material 2720 may be deposited onto the appropriate surface 2710, but as little as 1.7nm of some modifying material 2720 (e.g., cobalt) has been tested. In various implementations of the invention, a smaller amount of modifying material 2450, e.g., on the order of a few angstroms, may be used. In some implementations of the invention, the modifying material 2720 may be deposited onto the appropriate surface 2710 in a real chamber, and the vacuum may have a pressure of 5 x10 "6 torr or less. Various chambers may be used including those used for processing semiconductor wafers. In some implementations of the invention, the CVD processes described herein may be performed in a CVD reactor such as a reaction chamber obtained under the commercial name 7000 of Genus corporation (san francovel, ca), a reaction chamber obtained under the commercial name 5000 of applied materials corporation (santa clara), or a reaction chamber obtained under the commercial name Prism of Novelus corporation (san jose, ca). However, any reaction chamber suitable for performing MBE, PLD or CVD may be used.

FIG. 36 illustrates a process for forming a modified ELR material in accordance with various implementations of the invention. In particular, fig. 36 illustrates a process for forming and/or modifying an a-b film 3100. In optional operation 3610, a buffer layer is deposited on substrate 2420. In some implementations of the invention, the buffer layer includes PBCO or other suitable buffer material. In some implementations of the invention, substrate 2420 comprises LSGO or other suitable substrate material. In operation 3620, ELR material 3110 is laminated onto a substrate 2420 having an appropriate orientation, as described above with respect to fig. 31. As will be appreciated, in accordance with an optional operation 3610, ELR material 3110 is laminated onto the substrate 2420 or the buffer layer. In some implementations of the invention, the layer of ELR material 3110 is two or more unit layers thick. In some implementations of the invention, the layer of ELR material 3110 is a thickness of some unit layers. In some implementations of the invention, the layer of ELR material 3110 is a thickness of several unit layers. In some implementations of the invention, the layer of ELR material 3110 is a thickness of a number of unit layers. In some implementations of the invention, the ELR material 3110 is laminated onto the substrate 2420 using an IBAD process. In some implementations of the invention, the ELR material 3110 is laminated onto the substrate 2420 while subjected to a magnetic field to improve alignment of the crystal structure in the ELR material 3110.

In an optional operation 3630, an appropriate surface 2710 of the ELR material 3110 (which corresponds to the primary surface 3130 relative to the a-b film 3100) is polished using the various techniques described above. In some implementations of the invention, the polishing is accomplished without introducing impurities onto the appropriate surface 2710 of the ELR material 3110. In some implementations of the invention, polishing is accomplished without damaging the clean chamber. In operation 3640, a modifying material 2720 is laminated onto the appropriate surface 2710. In optional operation 3650, a cover material, such as, but not limited to, silver, is laminated over the entire modified material 2720.

In various implementations of the invention, the modified ELR material 1060, whether used in bulk, incorporated in a film (e.g., ELR material 2410 in c-film 2400, ELR material 3110 or other films or strips in a-b film 3100), or otherwise (e.g., wires, foils, nanowires, etc.), may be incorporated in various products, systems, and/or devices as described herein.

As will be appreciated, although various implementations of the present invention are described below in terms of "modified" ELR materials, various implementations may include new ELR materials with improved operating characteristics without departing from the scope of the invention. Further, as will be appreciated, various implementations may include any material exhibiting some or all of the improved operating characteristics described herein without departing from the scope of the present invention. That is, various implementations may include modified ELR materials, perforated ELR materials, non-conventional ELR materials, and/or other materials that exhibit some or all of the improved operating characteristics described herein. In various implementations, the ELR materials described herein, such as modified ELR materials and/or perforated ELR materials, may be partially or formed into a plurality of different current carrying components, such as films/strips, wires, nanowires, and the like, for use in the devices, systems, and other implementations of the present invention. The following are some examples of current carrying components, but one of ordinary skill will understand that others may also be used:

nanowires-nanostructures having a width or diameter on the order of tens of nanometers or less and generally unlimited length for forming segments, contours, coils, and/or other structures having extremely low resistance capable of carrying current from one point to another. The nanostructures may form various nanowire structures, including discrete structures, integrated on or into a substrate, implemented on or into a support structure, and other nanowire structures;

foil-disposing the ELR material on or as a flexible film/tape, such as, but not limited to, a metal tape, and optionally coating the metal and/or ELR material with a buffered metal oxide. Texture may be introduced into the ribbon, such as by using a roll assisted biaxially textured substrate (RABiTS) process, or a textured ceramic buffer layer may alternatively be deposited by means of an ion beam on a non-textured alloy substrate, such as by using an Ion Beam Assisted Deposition (IBAD) process. Other techniques may utilize chemical vapor deposition CVD processes, Physical Vapor Deposition (PVD) processes, Molecular Beam Epitaxy (MBE), atomic layer-layer molecular beam epitaxy (ALL-MBE), and other solution deposition techniques to obtain ELR bands.

Wire-one or more ELR components can be clamped together to form a large-sized wire; and other current carrying components.

Thus, in some implementations, forming and/or integrating the ELR materials described herein into various current carrying components can and/or facilitate implementation of the ELR materials into devices and systems that utilize, generate, convert, and/or transmit electrical energy, such as electrical current. These devices and systems may benefit from improved operating characteristics by operating more efficiently than conventional devices and systems, operating more cost-effectively than conventional devices and systems, operating with less waste than conventional devices and systems, and other improved operating characteristics.

Laminated assembly exhibiting extremely low electrical resistance

This portion of the specification refers to FIGS. 1-Z through 7-Z; all reference numerals contained in this section therefore refer to elements in these figures.

For purposes of this description and in accordance with various implementations of the invention, the constituents of a substance generally include ELR materials, such as, but not limited to, perovskite materials (e.g., YBCO, etc.), and modified materials or modified compositions (referenced interchangeably), such as: one or more layers of modifying component applied externally to the ELR material; one or more modifying components that contribute to the application of strain in the ELR material; one or more layers of different ELR materials, one or more of which contribute to the application of strain in the ELR material of the further layer; one or more layers of ELR material having different crystal orientations, one or more of which contribute to the application of strain in the ELR material of the other layer; one or more modifying components that contribute to the application of strain in the ELR material; one or more modifying ingredients such as described above; and/or other modifying ingredients.

In some implementations, the combination of substances can include one or more modifying components applied to or formed on the ELR material in a certain proximity to the charge surface and/or charge reservoir of the ELR material. For example, the combination of substances may include a layer of YBCO and a layer of modifying material applied to or formed on an appropriate surface of the YBCO layer. In some implementations, the surface is substantially parallel to the c-axis of YBCO. In some implementations, the surface is substantially perpendicular to the a-axis of YBCO. In some implementations, the surface is substantially perpendicular to the b-axis of YBCO. In some implementations, other suitable surfaces may be used.

In some implementations, applying the modifying component to the ELR material may cause one or more oxygen atoms in the crystal structure of the ELR material to move in the ELR material, forming an oxygen concentration gradient that strains the crystal structure of the ELR material. In some implementations, the modifying component, such as chromium, may act as a "getter" for oxygen atoms in the ELR material, thereby causing the oxygen atoms to move toward the modifying component, which in turn strains various regions or portions in the crystal structure of the ELR material.

In some implementations, the combination of substances may include multiple layers of different ELR materials, such different ELR materials including different atoms, including, but not limited to, different rare earth metal atoms relative to each other (e.g., YBCO versus DyBCO, YBCO versus NBCO, DyBCO versus NBCO, etc.); with different oxygen contents in their crystal structure relative to each other (e.g. O in YBCO)₆And O₇Oxygen stoichiometry/composition); and/or different crystal orientations relative to each other (e.g., a-axis YBCO versus b-axis YBCO, etc.). Such a combination may be laminated in such a way that different layers of ELR material may strain various regions or portions of the combination.

In some implementations of the invention, the strain in various regions or portions of the assembly affects pores in the crystal structure of the ELR material to improve the operating characteristics (e.g., operating temperature, current carrying capacity, etc.) of the ELR material.

Modification of a material (e.g., a material having a crystalline structure) may result in the material exhibiting a lower resistance, such as a very low resistance, to current flow in the material at higher than desired temperatures. In some implementations, as discussed above, the modification may include applying or forming a layer of the modifying material onto an appropriate surface. The applied or formed layer of the modified material may induce strain or otherwise exert a force on some or all of the atoms and/or bonds that make up the crystalline structure of the material. This force or strain may alter the material such that the material exhibits different resistance characteristics, such as a lower resistance or a very low resistance. That is, the forces or strains that result in the material may be: causing the material to create, exhibit, and/or maintain an oxygen diffusion gradient at certain locations and/or regions in the material; causing the material to generate, exhibit, and/or maintain a level of oxygen diffusion in or adjacent to a charge reservoir in the material; and/or cause the crystalline structure of the material to distort, bend, open, close, stiffen, or otherwise maintain or change orientation and/or geometry, e.g., relative to pores in the material, which may facilitate the transport of electrons from one location to another, etc.

Various implementations of the invention may facilitate the application of force or strain to or within an ELR material. In some implementations, the force may be applied to portions of the ELR material from the outside and/or intact. In some implementations, the force may result in internal stress, strain, or other forces applied in portions of the ELR material. For example, the portions may be a portion of the ELR material including oxygen atoms, a portion of the ELR material including a copper-oxygen face of atoms, a portion of the ELR material including a charge reservoir, a portion of the ELR material including pores in a crystal structure of the ELR material, a portion of the ELR material corresponding to (i.e., substantially parallel to) an a-face of the material, a portion of the ELR material corresponding to (i.e., substantially parallel to) a b-face of the material, a portion of the ELR material corresponding to a face substantially parallel to a c-axis of the material, a portion of the ELR material located near or near a surface of the material, or other portions of the ELR material.

Various implementations of the invention may be realized as various combinations of substances, using the various observations described herein, which are now described in detail.

Various implementations of the invention may include various combinations, such as combinations having ELR materials and modifying materials configured and/or adapted to carry current from one location to another. That is, such an assembly conducts electrons from one location to another, among others.

In some implementations, the various combinations include one or more modifying materials applied to or formed on the appropriate surface of the ELR material. Fig. 1-Z shows a combination 100 of modified ELR materials (also referred to herein as modified ELR material 100) having an ELR material 110 (also referred to herein as unmodified ELR material 110) and a modifying material 120 applied to a surface of ELR material 110.

In some implementations, the ELR material 110 may be representative of a family of superconducting materials commonly referred to as mixed-valence cuprate perovskites as discussed above. Such mixed-valence cuprate perovskite materials may also include, but are not limited to, various substitutions of cations of the material. The aforementioned named mixed-valence cuprate perovskite materials may refer to a general class of materials in which many different proportions exist, such as the class of perovskite materials including rare earth metals (Re), barium (Ba), copper (Cu), and oxygen (O) or "ReBCO". Exemplary ReBCO materials may include YBCO, NBCO, HoBCO, GdBCO, DyBCO, and others, such as other materials with appropriate 1-2-3 stoichiometry.

In some implementations, the ELR material 110 may include HTS materials outside the mixed-valence cuprate perovskite material family ("non-perovskite materials"). Such non-perovskite materials may include, but are not limited to, iron phosphorus family elements, magnesium diboride (MgB)₂) And other non-perovskites. In some implementations, the ELR material 110 may be other superconducting materials or non-superconducting materials.

In some implementations, the modifying material 120 may be a metal, such as chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium, or beryllium, or a metal oxide of these metals. In some implementations, the modifying material 120 can be any material capable of applying a strain to or within the ELR material 110, such as a metal with a high oxygen affinity, a "getter" material, a material with one or more lattice constants different from those of the ELR material 110 (including additional ELR materials), and so forth. For example, in some implementations, to induce strain in the ELR material 110, the modifying material 120 may have a strong oxygen affinity, such as a material that readily binds, attracts, or "gains" oxygen or changes the oxygen content and/or oxygen distribution in the ELR material. In some implementations, to induce strain in the ELR materials 110, the modification material 120 may have one or more lattice constants that are mismatched with those ELR materials 110.

For example, one effect of the modifying material 120 depositing chromium on the surface of the ELR material 110 is that an oxygen gradient may be established near the surface of the ELR material 110. In some implementations, the modification layer 120 is placed on a surface of the ELR material substantially perpendicular to an a-axis or b-axis of the ELR material, which may result in, among other things, establishing an oxygen concentration gradient in the ELR material. In some implementations, the modification layer 120 is placed on a surface of the ELR material that is substantially parallel to a c-axis of the ELR material, which may result in, among other things, establishing an oxygen concentration gradient in the ELR material.

In some implementations, the ELR material 110 includes a charge plane that includes one or more atoms that partially form pores. For example, YBCO is formed from various atoms of yttrium ("Y"), barium ("Ba"), copper ("Cu"), and oxygen ("O"). The pores in YBCO are formed by the pore atoms, i.e., atoms of yttrium, copper, and oxygen, and the charge planes in YBCO are formed by the various atoms of copper ("Cu") and oxygen ("O").

Fig. 2-Z shows a combination 200 including a substrate 230, two or more modifying

elements

210, 215, and an ELR material 220 positioned between the modifying

elements

210, 215. Specifically, the modifying

components

210, 215 are bonded or formed on the top and bottom surfaces, respectively, of the ELR material 220. In some implementations of the invention, the top and bottom surfaces of ELR material 220 are suitable surfaces of ELR material 220 (e.g., surfaces substantially perpendicular to the a-axis of ELR material 220, etc.). Thus, the composite 200 may be strained proximate to the top surface of ELR material 220 by modifying element 210, and the composite 200 may be strained proximate to the bottom surface of ELR material 220 by modifying element 215 located on substrate 230.

By applying the modifying material to one or more surfaces of the ELR material, various implementations of the invention may control the application of strain and/or may strain the ELR material at various locations of the ELR material, such as at one or more locations having a charge plane, at one or more unit cells of the ELR material, at one or more pores of the ELR material, and/or other locations.

Some implementations of the invention may include a superlattice of ELR material layers that may be used to enhance properties of one or more layers of the ELR material of the superlattice.

Fig. 3-Z is a block diagram of an assembly 300 including different ELR material layers according to various implementations of the invention. More specifically, the assembly 300 includes a first layer 310 of ELR material labeled "ELR-X" and a second layer 320 of ELR material labeled "ELR-Y". As shown in fig. 3-Z, a first layer 310 is formed on or applied to a substrate 330 and a second layer 320 is formed on or applied to the first layer 310. As will be appreciated, in some implementations of the invention, the substrate 330 is optional. Although shown as having only first and

second layers

310, 320, the combination 300 may include any number of pairs of first and

second layers

310, 320 formed in alternating patterns between the first and

second layers

310, 320. In some implementations, ELR-X corresponds to a first ELR material, and ELR-Y corresponds to a second ELR material different from the first ELR material. For example, in some implementations of the invention ELR-X may correspond to YBCO and ELR-Y may correspond to NBCO. As will be appreciated, other ELR materials may be used.

Fig. 4-Z is a block diagram of an assembly 400 including layers of different forms of the same ELR material in accordance with various implementations of the invention. More specifically, the assembly 400 includes a first layer 410 of a first form of ELR material labeled "ELR-X form 1" and a second layer 420 of a second form of the same ELR material labeled "ELR-X form 2". In some implementations, the same basic ELR material has a different form, e.g.But are not limited to, different crystal orientations, different oxygen stoichiometry/composition (e.g., O in YBCO)₆And O₇Etc.), different variations, and other different forms. As will be appreciated, other forms of the same ELR material may be used. As shown, a first layer 410 is formed on or applied to a substrate 430, and a second layer 420 is formed on or applied to the first layer 410. As will be appreciated, in some implementations of the invention, the substrate 430 is optional. Although shown as having only first and

second layers

410, 420, assembly 400 may include any number of pairs of first and

second layers

410, 420 that are alternately patterned between first and

second layers

410, 420.

As discussed, the assembly 400 may include layers of different forms or variants of the same ELR material (e.g., ReBCO), and these different forms of the same ELR material may cause strain to one or more layers of the ELR material or within it. For example, varying the oxygen content between layers (e.g., varying O in YBCO)₆And O₇Oxygen stoichiometry/composition) between the layers may cause lattice mismatch between the layers, which may strain bonds of the crystal structure of the ELR material in the layers. Also, for example, changing the crystal orientation of the ELR material between layers (e.g., one layer of the ELR material having an a-axis orientation and another layer of the ELR material having a b-axis orientation) may also cause a lattice mismatch between the layers, thereby causing similar strain.

Fig. 5-Z illustrates a composite 500 including a plurality of different ELR material layers. As shown, the assembly 500 includes a first layer 510 of ELR material labeled "ELR-X", a second layer 520 of ELR material labeled "ELR-Y", and a third layer 530 of ELR material labeled "ELR-Z". As shown, a first layer 530 is formed on or applied to the substrate 540, a second layer 510 is formed on or applied to the first layer 530, and a third layer 520 is formed on or applied to the second layer 510. As will be appreciated, in some implementations of the invention, the substrate 530 is optional. In some implementations of the invention, the ELR materials included in the layers of the assembly 500 may well be different ELR materials (as discussed above with reference to FIGS. 3-Z) or different forms of the same ELR material (as discussed above with reference to FIGS. 4-Z).

Although not otherwise shown in fig. 3-Z-5-Z, various other layers of non-ELR materials may be included in

various combinations

300, 400, 500 (or any other combination described herein) including layers interspersed between one or more of the layers shown in fig. 5-Z.

Creating a composite 300, 400, 500 of different ELR materials or layers of different forms of ELR materials in order to stress/strain the various layers of ELR materials enables various implementations of the present invention to utilize lattice mismatch between various ReBCO materials (e.g., YBCO and NBCO, among others) or other materials having similar lattice parameters (e.g., BSCCO and others). In some implementations, the increased strain can change the phonon frequency and/or distribution and/or amplitude around the pores in the crystal structure of these ELR materials, allow the resistance of the materials to decrease, improve operating characteristics, such as, but not limited to, operation in the ELR regime at higher temperatures, and other benefits.

In some implementations of the invention, the layers of the superlattice of the

assemblies

300, 400, 500 are formed such that appropriate surfaces of the ELR materials in the layers (e.g., surfaces substantially perpendicular to the a-axis of the ELR materials, surfaces substantially perpendicular to the b-axis of the ELR materials, surfaces substantially parallel to the c-axis of the ELR materials, etc.) correspond to interface surfaces between the ELR materials. In other words, the surface forming the interface between

layers

520 and 510 of FIG. 5-Z, for example, corresponds to a surface substantially perpendicular to the a-axis of both ELR-Y and ELR-X, substantially perpendicular to the b-axis of both ELR-Y and ELR-X, or otherwise substantially parallel to the c-axis of both ELR-X and ELR-Y.

Of course, there may be many layers of similar and/or different ELR materials in combination in various implementations of the invention. In some implementations, the assembly 500 may be formed by depositing a layer of a first ReBCO material having a first thickness, then depositing a layer of a second ReBCO material having a second thickness, and then depositing a layer of a third ReBCO material having a third thickness, wherein the ReBCO material of at least the second layer has one or more lattice constants different from those of the materials of the first and third layers. In addition, the first, second and third thicknesses may be the same as one another, completely different from one another, or some the same and others different, and so forth. Any number of different ReBCO layers and/or thicknesses of layers may be deposited in order to improve the operating characteristics of the assembly, including, but not limited to, increasing various temperatures, resistances, and/or current carrying capacities of the assembly, among others.

In some implementations of the invention, the assembly may be laminated (bottom to top) as follows:

ELR₁：ELR₂：ELR₁：ELR₂：ELR₁：ELR₂：ELR₁：ELR₂：&。

ELR₁：ELR₂：ELR₃：ELR₄：ELR₃：ELR₂：ELR₁：ELR₂：ELR₃：&。

ELR₁：ELR₂：ELR₃：ELR₄：ELR₃：ELR₄：ELR₃：ELR₄：ELR₃：&。

in some implementations of the invention, the assembly 500 may be laminated (bottom to top) as follows:

ELR₁：ELR₂：ELR₃：ELR₂：ELR₃：ELR₂：ELR₃：ELR₂：ELR₃：&。

thus, the layers may be selected for various reasons, such as to create a mismatch in lattice constants, to create a controlled strain in one or more layers, to increase the current carrying capacity of the assembly, to improve the manufacturing of the assembly, to improve the manufacturability of each other on the layers, and so forth. In addition, the thickness of the layers, such as the number of unit cells per layer of material, may be selected to adjust the strain on the layers, to increase current carrying capacity, and so forth.

In some implementations of the invention, the number of layers, the type of ELR material in one or more layers, the type of other non-ELR material in one or more layers, the thickness of one or more layers, the orientation of one or more layers, the order of one or more layers, and/or other parameters of the assembly may be modified, defined, and/or selected to achieve desired characteristics of the assembly or manufacturability of the assembly, among other benefits.

Fig. 6-Z illustrates an example assembly 600 formed from a superlattice that includes multiple layers of various ELR materials in accordance with various implementations of the invention. As shown in fig. 6-Z, the assembly 600 includes a LaSrGaO4(LSGO) substrate 610 having a top surface substantially perpendicular to an a-axis of the substrate. Other substrates may be used, such as, but not limited to, Strontium Titanate (STO) or magnesium oxide (MgO). A layer 620 of YBCO is formed on the substrate 610, followed by alternating layers 634 of NBCO with layers 632 of YBCO. By way of example, the assembly 600 may include a layer 620 of YBCO formed with a thickness of 200nm followed by ten (10) pairs of alternating

layers

634, 632 of NBCO and YBCO, respectively, each of such alternating layers having a thickness of 10nm (i.e., 10nm NBCO alternating with 10nm YBCO), all formed on the layer 620 of YBCO. Although not shown otherwise, the assembly 600 may include other layers, such as layers of buffer material, additional or fewer pairs of alternating layers, additional layers of other ELR materials, additional or other substrate layers, other or different thickness layers, and so forth.

In some implementations of the invention, a barrier material may be used to substantially encase the various combinations described above. A barrier material may be used to substantially prevent oxygen in the crystal structure of the ELR material from diffusing out of the assembly. In some implementations, gold may be deposited onto all surfaces of the assembly to substantially encase the assembly. Other barrier materials may be used, such as, but not limited to, silicon dioxide or Indium Tin Oxide (ITO). In some implementations, 5-10nm of gold is deposited on the entire surface of the assembly, although other thicknesses may be used.

FIGS. 7A-Z-7I-Z show test results obtained from testing samples of a combination of LSGO substrates; followed by about 200nm YBCO formed in a-axis orientation (e.g., the upward a-axis of YBCO) on an LSGO substrate, followed by alternating layers of 10 pairs of about 10nm NBCO and about 10nm YBCO, each of which is formed in a-axis orientation on an existing layer; and then about 8.5nm of gold as a barrier material encasing the sample.

The test results of fig. 7A-Z-7I-Z include the relevant portion of the plot of the resistance of the sample as a function of temperature (in kelvin) under various operations and conditions as described below. More specifically, the graph corresponds to measurements of the resistance of the sample over a temperature range of 180K-270K. Before further elaboration of the test results, the test equipment and settings provided are briefly explained.

The samples were mounted on a PCB board using double-sided tape. A tin-plated copper wire with a diameter of 0.004 "was adhered to the top gold surface of the sample with indium solder. The opposite ends of these wires are adhered to pads on the PCB board. The assembly is disposed in a refrigerator. The Githenil 6221 current source provides a DC current through the sample, while the Githenil 2182a voltmeter measures the voltage drop across the sample to provide a "delta mode" resistance measurement (e.g., R ═ ((V +) - (V))/2I)). A thermal resistance device ("RTD") is used to measure temperature.

For some test runs, the sample was initially cooled to a temperature below the transition temperature of YBCO and allowed to heat. For other test runs (to preserve time and coolant, and he avoids unnecessary thermal stress to the sample), the sample is cooled only to just below 160K and allowed to heat up. In either case, when the sample is heated, a measurement of the voltage across the sample is obtained, along with a measurement of the temperature of the sample. From the voltage measurements, the resistance of the delta mode is determined and then plotted as a resistance versus temperature, or R (T) curve (sometimes also referred to as the R-T plot), corresponding to the test results shown in FIGS. 7A-Z-7I-Z.

Figures 7A-Z through 7H-Z correspond to a single r (t) curve for eight test runs of the sample, in the order in which the test runs were performed (i.e., figures 7A-Z correspond to the r (t) curve for the first test run, figures 7B-Z correspond to the r (t) curve for the second test run, etc.). FIGS. 7A-Z-7D-Z and 7H-Z correspond to the R (T) curves for test runs in which samples were driven by DC currents of 200 nA. FIGS. 7E-Z-7G-Z correspond to the R (T) curves for test runs in which the samples were driven by DC currents of 100 nA. No other smoothing, averaging or other data processing is used than to determine the delta mode resistance forming voltage measurement.

Fig. 7I-Z correspond to r (t) curves for a single test run of a sample in different test beds and under different conditions of those of fig. 7A-Z-7H-Z. Specifically, during this test run, the sample was driven at 24Hz with 200nA AC current using an SR830 lock-in amplifier (LIA) and with a time constant of 1 second.

As shown, all test runs included one or more changes in the respective R (T) curves over a coarse range of 210K-240K. These changes in the slope of the r (t) curve are considered to be consistent with the portion of the sample entering the reduced resistance or ELR state. As will be appreciated, no similar change is observed in either r (t) curve of YBCO or NBCO.

Some implementations of the invention may include alternating layers having greater or lesser thicknesses than described above with respect to fig. 6-Z. In some implementations of the invention, at least one of the layers in the superlattice may be one, two, three, or more unit cells thick. In some implementations of the invention, each of the layers in alternating pairs of layers in the superlattice may be one, two, three, or more unit cells thick. In some implementations of the invention, the thickness of one layer of a pair (or other grouping) of alternating layers is different from the thickness of the other layer of the pair. In some implementations of the invention, the layer thicknesses of one pair of alternating layers in the superlattice are different than the layer thicknesses of another pair of alternating layers in the superlattice. As will be appreciated, other thicknesses may be used to achieve various operating characteristics as discussed herein.

Some implementations of the invention can include multiple Re atoms in a monolayer, such as a layer having multiple Re atoms of different sizes relative to each other. For example, the ReBCO layer may have a lattice structure in which 4 atoms out of every 5 Re atoms are Y atoms, and every fifth atom is a Dy atom. These types of layers, including two or more rare earth atoms in their crystal structure, may introduce additional strain forces in the assembly due to ordering effects, local lattice mismatch, additional vibrational constants, and the like.

Some implementations of the invention may include Re atoms selected based on their oxidation state. For example, although Y and Nd have one oxidation state (3)⁺) The elements samarium (Sm), europium (Eu), erbium (Er), thulium (Tm) and ytterbium (Yb) may have 3⁺And 2⁺Two oxidation states, and cesium (Ce) and terbium (Tb) may have 3⁺And 4⁺Two oxidation states. As will be appreciated, other Re atoms having other oxidation states may be selected. In such implementations, Re atoms in the ELR layer of the assembly having a variable oxidation state can help to fix oxygen sites and/or carrier defects in the crystal structure or pores of the crystal structure, and/or can stabilize a greater or lesser local amount of oxygen in a layer, among other benefits. For example, an ELR material layer in a superlattice may include a majority of Y atoms as Re atoms, and a minority of Ce3⁺Atomic and small amount of Ce4⁺Atoms for controlling oxygen/carrier defects in such layers, and the like.

In some implementations of the invention, a layer of material with very low oxygen affinity (e.g., gold) is formed on the outermost layer of ELR material in the superlattice to reduce the rate at which oxygen diffuses out of or into different ones of the layers of the superlattice. In some implementations of the invention, a layer of material (e.g., gold) having very low oxygen affinity is formed on all of the outermost surfaces of the superlattice to reduce the rate at which oxygen diffuses out of or into different ones of the layers of the superlattice.

In some implementations of the invention, various fabrication processes for creating a superlattice of ELR material layers may introduce a desired strain into the material. For example, when depositing a layer of ELR material on a substrate, varying the temperature and/or oxygen partial pressure of the substrate during deposition may allow the material to be deposited at its "natural" temperature, and when the material cools below the deposition temperature, strain will be introduced, among other things.

Thus, some implementations of the invention may include a superlattice, in which case, in fact, each layer in the superlattice may function, among other things, to modify an adjacent layer. In other words, one layer may correspond to the ELR material therein and itself, as well as a modifying material for another layer of ELR material, such that the layers in the superlattice together form the modified ELR material. In accordance with various implementations of the invention, the combination of various layers of ELR materials, varying the type, oxygen content, Re atom type, orientation, etc., can provide sufficient strain to one or more layers of the combination such that the layers exhibit a lower or very low electrical resistance to carry current within or between the layers, among other benefits.

In accordance with various implementations of the invention, whether used in a body, incorporated into a film or tape, or otherwise (e.g., wire, foil, nanowire, etc.), the

assemblies

100, 200, 300, 400, 500, and/or 600 in this section may be incorporated into various devices and associated equipment, as described herein. For example, these combinations may be utilized and/or incorporated into the following devices and systems by: capacitors, inductors, transistors, conductors and conductive elements, integrated circuits, antennas, filters, sensors, magnets, medical devices, power cables, energy storage devices, transformers, appliances, mobile devices, computing devices, information storage devices, and other devices and systems that transmit electronic and/or information when in use.

Thus, in some implementations, forming and/or integrating the modified ELR materials described herein into various current carrying components can and/or facilitate implementation of the modified ELR materials into devices and systems that utilize, generate, convert, and/or deliver electrical energy, such as electrical current. These devices and systems benefit from improved operating characteristics by operating more efficiently than conventional devices and systems, operating more cost-effectively than conventional devices and systems, operating with less waste than conventional devices and systems, and so forth.

In some implementations, the combination of substances includes a first layer of ELR material having a crystalline structure; and a second layer of material formed on the first layer, the second layer applying a strain in at least a portion of the crystal structure of the ELR material. In some implementations, the second layer of material exerts a controlled strain in at least a portion of the crystal structure of the ELR material. In some implementations, the second layer of material exerts a strain in the location of the crystal structure of the ELR material that includes the charge plane. In some implementations, the second layer of material exerts a strain in the location of the crystal structure of the ELR material including the pores of the crystal structure.

In some implementations, a combination to conduct current includes a first layer of ELR material having a copper oxide charge plane; and a second layer of material formed on the first layer, the second layer introducing strain in at least a portion of the first layer of ELR material including a copper oxide charge plane. In some implementations, the second layer of material introduces an external strain to at least the first layer of ELR material. In some implementations, the second layer of material induces an internal strain in at least the first layer of ELR material. In some implementations, in the first layer of ELR material, the second layer of material causes diffusion of oxygen atoms. In some implementations, in the first layer of ELR material, the second layer of material induces a diffusion gradient of oxygen atoms.

In some implementations, the assembly includes a conductive material having a crystalline structure; and a material formed on the conductive material that causes a force to be applied to or within a portion of the crystalline structure of the conductive material. In some implementations, the conductive material is a rare earth copper oxide material, and the material that results in the force being applied to the portion of the crystalline structure of the conductive material is a metal with a high oxygen affinity.

In some implementations, the combination includes a first ELR material having a crystalline structure; and a second ELR material formed on the first ELR material, the second ELR material causing a force in a portion of the crystal structure of the first ELR material.

In some implementations, the combination includes a first ELR material; and a second ELR material having a crystalline structure, the second ELR material formed on the first ELR material, the first ELR material causing a force in a portion of the crystalline structure of the second ELR material.

In some implementations, the combination includes a first ELR material having a crystalline structure; and a second ELR material having a crystalline structure, the second ELR material formed on the first ELR material, the second ELR material causing a force in a portion of the crystalline structure of the first ELR material, and the first ELR material causing a force in a portion of the crystalline structure of the second ELR material.

In some implementations, the combination includes a first layer having a first form of ELR material; a second layer having a second form of the ELR material, wherein the second layer is formed on the first layer; and a third layer having the ELR material of the first form, wherein the third layer is formed on the second layer.

In some implementations, the assembly includes a first layer of YBCO; and a plurality of layers formed on a top surface of the YBCO, the plurality of layers including pairs of alternating layers of NBCO and YBCO. In some implementations, the thickness of the first layer of YBCO is about 200 nanometers and the thickness of each of the plurality of layers is about 10 nanometers. In some implementations, the plurality of layers includes ten pairs of alternating layers of NBCO and YBCO. In some implementations, the plurality of layers includes at least two pairs of alternating layers of NBCO and YBCO.

In some implementations, a combination is used to transmit current, the combination including a plurality of layers including at least one pair of alternating layers of NBCO and YBCO. In some implementations, the set of layers includes at least ten pairs of alternating layers of NBCO and YBCO. In some implementations, a substrate has a surface substantially perpendicular to an a-axis of the substrate; a layer of YBCO is applied to a surface of the substrate, the layer of YBCO having a surface substantially perpendicular to an a-axis of YBCO; and wherein this set of layers is applied to the surface of YBCO.

In some implementations, the assembly includes a substrate of YBCO, the substrate having a surface substantially parallel to a c-axis of YBCO; a first layer of NBCO formed on a surface of the base layer of YBCO, the first layer of NBCO having a surface substantially parallel to a c-axis of the NBCO; a first layer of YBCO formed on a surface of the first layer of NBCO, the first layer of YBCO having a surface substantially parallel to a c-axis of YBCO; a second layer of NBCO formed on a surface of the first layer of YBCO, the second layer of NBCO having a surface substantially parallel to a c-axis of the NBCO; a second layer of YBCO formed on a surface of the second layer of NBCO, the second layer of YBCO having a surface substantially parallel to a c-axis of YBCO; a third layer of NBCO formed on a surface of the second layer of YBCO, the third layer of NBCO having a surface substantially parallel to a c-axis of the NBCO; a third layer of YBCO formed on a surface of the third layer of NBCO, the third layer of YBCO having a surface substantially parallel to a c-axis of YBCO; a fourth layer of NBCO formed on a surface of the third layer of YBCO, the fourth layer of NBCO having a surface substantially parallel to a c-axis of the NBCO; a fourth layer of YBCO formed on a surface of the fourth layer of NBCO, the fourth layer of YBCO having a surface substantially parallel to a c-axis of YBCO; a fifth layer of NBCO formed on a surface of the fourth layer of YBCO, the fifth layer of NBCO having a surface substantially parallel to a c-axis of the NBCO; a fifth layer of YBCO formed on a surface of the fifth layer of NBCO, the fifth layer of YBCO having a surface substantially parallel to a c-axis of YBCO; a sixth layer of NBCO formed on a surface of the fifth layer of YBCO, the sixth layer of NBCO having a surface substantially parallel to a c-axis of the NBCO; a sixth layer of YBCO formed on a surface of the sixth layer of NBCO, the sixth layer of YBCO having a surface substantially parallel to a c-axis of YBCO; a seventh layer of NBCO formed on a surface of the sixth layer of YBCO, the seventh layer of NBCO having a surface substantially parallel to a c-axis of the NBCO; a seventh layer of YBCO formed on a surface of the seventh layer of NBCO, the seventh layer of YBCO having a surface substantially parallel to a c-axis of YBCO; an eighth layer of NBCO formed on a surface of the seventh layer of YBCO, the eighth layer of NBCO having a surface substantially parallel to a c-axis of the NBCO; an eighth layer of YBCO formed on a surface of the eighth layer of NBCO, the eighth layer of YBCO having a surface substantially parallel to a c-axis of YBCO; a ninth layer of NBCO formed on a surface of the eighth layer of YBCO, the ninth layer of NBCO having a surface substantially parallel to a c-axis of the NBCO; a ninth layer of YBCO formed on a surface of the ninth layer of NBCO, the ninth layer of YBCO having a surface substantially parallel to a c-axis of YBCO; a tenth layer of NBCO formed on a surface of the ninth layer of YBCO, the tenth layer of NBCO having a surface substantially parallel to a c-axis of the NBCO; and a tenth layer of YBCO formed on a surface of the tenth layer of NBCO, the tenth layer of YBCO having a surface substantially parallel to a c-axis of YBCO. In some implementations, the combination further includes a gold layer formed on a surface of the tenth layer of YBCO. In some implementations, the assembly further includes a gold layer substantially encasing the assembly.

Devices formed of and/or including ELR materials

Various devices, applications, components, devices, and/or systems may employ the ELR materials described herein. These devices, applications, components, apparatuses, and/or systems are now discussed in more detail in the following sections.

Chapter 1-nanowires formed of ELR material

This section of the specification relates to FIGS. 1-36 and 37-A through 45B-A; all reference numerals included in this section therefore refer to elements found in these figures.

In various implementations of the invention, ELR materials may be used to form various nanowires and nanowire assemblies, which will be described in further detail below. Thus, in some implementations of the invention, these ELR materials may be formed into various nanowire assemblies such that current is conducted primarily along the b-axis of the ELR material. In these implementations, as shown in fig. 39-a, an ELR material having a length referenced to the b-axis, a width referenced to the c-axis, and a depth (or thickness) referenced to the a-axis may be formed, but as will be apparent from this description, other coordinate systems, orientations, and configurations may be used for the ELR material. The coordinate system shown in fig. 39-a will be used for the following discussion.

In some implementations of the invention, various ELR materials may be used to form the nanowires. In conventional terminology, nanowires are nanostructures having a width or diameter on the order of tens of nanometers or less and generally a strain-free length. In some implementations of the invention, various modified ELR materials 1060 can be formed as nanowires having a width and/or depth of 50 nanometers. In some implementations of the invention, various modified ELR materials 1060 can be formed as nanowires having a width and/or depth of 40 nanometers. In some implementations of the invention, various modified ELR materials 1060 can be formed as nanowires having a width and/or depth of 30 nanometers. In some implementations of the invention, various modified ELR materials 1060 can be formed as nanowires having a width and/or depth of 20 nanometers. In some implementations of the invention, various modified ELR materials 1060 can be formed as nanowires having a width and/or depth of 10 nanometers. In some implementations of the invention, various modified ELR materials 1060 can be formed as nanowires having a width and/or depth of 5 nanometers. In some implementations of the invention, various modified ELR materials 1060 can be formed as nanowires having widths and/or depths less than 5 nanometers. In some implementations of the invention, various new ELR materials designed as described above may be formed into nanowires having a width and/or depth of 50 nanometers. In some implementations of the invention, various new ELR materials designed as described above may be formed into nanowires having a width and/or depth of 40 nanometers. In some implementations of the invention, the new ELR materials designed as described above may be formed as nanowires having a width and/or depth of 30 nanometers. In some implementations of the invention, various new ELR materials designed as described above may be formed into nanowires having a width and/or depth of 20 nanometers. In some implementations of the invention, various new ELR materials designed as described above may be formed into nanowires having a width and/or depth of 10 nanometers. In some implementations of the invention, various new ELR materials designed as described above may be formed into nanowires having a width and/or depth of 5 nanometers. In some implementations of the invention, various new ELR materials designed as described above may be formed into nanowires having widths and/or depths less than 5 nanometers.

In some implementations of the invention, nanowires may be stacked on top of each other with a buffer and/or substrate layer disposed therebetween to form a layered nanowire. Each nanowire disposed in each layer may be formed from the new ELR material or modified ELR material 1060 as discussed above and may have any of the widths and/or depths described above.

In some implementations of the invention, the nanowire may be used to carry charge from the first end to the second end. Each of these ends may be connected to an electrical component, including but not limited to another nanowire, wire, trace, lead, interconnect, electronic device, electronic circuit, semiconductor device, transistor, memristor, resistor, capacitor, inductor, MEMs device, pad, voltage source, current source, ground, or other electrical component. In some implementations of the invention, the nanowire may be coupled to one or more of these electrical components via the ELR material of the nanowire. In some implementations of the invention, the nanowire may be indirectly coupled to these electrical components by another type of ELR material (i.e., a modified versus unmodified ELR material, an ELR material in the same family or class of ELR materials, etc.). In some implementations of the invention, the nanowires may be indirectly coupled to these electrical components by conductive materials, including, but not limited to, conductive metals.

Fig. 37-a illustrates a cross-section of an exemplary ELR material 3700 parallel to the c-plane and through the center of a hole 3710 formed in the ELR material 3700, in accordance with various implementations of the invention. For purposes of the following discussion and practice of the invention, ELR material 3700 corresponds to conventional ELR materials (i.e., unmodified superconducting and/or HTS materials (e.g., unmodified YBCO, etc.)) as well as various modified ELR materials 1060 and new ELR materials, various implementations of which are described above. FIG. 37-A shows various apertures 3710 through ELR material 3700 including a-axis aperture 3710A, B, axis aperture 3710B and ab axis aperture 3710C. a-axis aperture 3710A corresponds to aperture 3710 substantially parallel to the a-axis through ELR material 3700; b-axis aperture 3710B corresponds to aperture 3710 through ELR material 3700 that is substantially parallel to the B-axis; the ab-axis aperture 3710C corresponds to an aperture 3710 through the ELR material 3700 that is substantially parallel to various axes in the C-plane at various angles off the a-axis (or b-axis), such as angle 3720. As will be appreciated, not all of the holes 3710 through the ELR material 3700 are shown in fig. 37-a-many are not shown for clarity and ease of illustration.

As will also be appreciated, the aperture 3710 depends on the crystalline structure of the ELR material 3700. For example, as shown in FIG. 37-A, the ab-axis aperture 3710C of ELR material 3700 (corresponding to YBCO in this example) exists at an angle +/-45 degrees from the a-axis. By way of further example, fig. 38-a shows a B-axis hole 3710B in ELR material 3700 relative to an ab-axis hole 3710C in exemplary ELR material 3700. As will be appreciated, other ab axial holes 3710C can be present in other ELR materials, including additional ab axial holes 3710C at other angles (e.g., +/-30 degrees, +/-60 degrees, etc.). Similarly, as will be appreciated, while a-axis hole 3710A and B-axis hole 3710B are shown in fig. 37-a as being orthogonal to each other in ELR material 3700, other orientations of such holes 3700 may exist depending on the crystalline structure of other ELR materials.

Conventional superconducting materials, including HTS materials, exhibit various phenomena commonly associated with such superconducting materials. As will be appreciated, these superconducting materials exhibit the meissner effect, which appears to be significantly free or exclusive of electromagnetic fields from within the superconducting material, except for extremely low electrical resistance. The meissner effect is believed to be a result of the formation of eddy currents or loop currents within the superconducting material. These eddy currents are believed to generate magnetic fields within the superconducting material that, in turn, tend to cancel each other out, thereby significantly eliminating or excluding electromagnetic fields within the interior. Controlling (or eliminating) these eddy currents may control (or eliminate) the meissner effect exhibited by the superconducting material. In other words, controlling (or eliminating) these eddy currents may prevent a net cancellation of the magnetic field inside the superconducting material.

When current "loops back" on itself in the ELR material 3700, eddy currents are believed to be formed in the ELR material 3700. Reference is now made to current path 3730 (shown in figure 37-a as current path 3730A, current path 3730B, current path 3730C, current path 3730D, and current path 3730E). As shown, when current flows through the ELR material 3700, the current may travel along a current path 3730A through the aperture 3710A. The current travels through the hole 3710A until it reaches the intersection between the individual holes 3710 in the ELR material 3700, i.e., intersection 3740A.

At the intersection 3740, it is generally believed that the current can deviate from a "straight" path of current in one hole 3710 to another path through a different hole 3710. For example, when the intersection 3740A is reached, current may continue to flow along the current path 3730A through the hole 3710A or deviate from the current path 3730A in some manner, such as along the current path 3730B through the hole 3710B. As shown, the current deviates 45 degrees from its original path on current path 3730A to current path 3730B.

After the current deviates from current path 3730A to current path 3730B, the current continues to flow along current path 3730B through hole 3710C until intersection 3740B is reached. Again, the current may continue to flow along current path 3730B through hole 3710C or be somehow offset from current path 3730B, such as along current path 3730C through hole 3710B. As shown, the current deviates a total of 90 degrees from its original path (two deviations of 45 degrees). This process may continue when the current reaches other intersections, such as

intersection

3740C and 3740D. At intersection 3740C, current may deviate from current path 3730C through hole 3710B to current path 3730D to through hole 3710C, and at intersection 3740D, current may deviate from current path 3730D through hole 3710C to current path 3730E through hole 3710A. As shown, at current path 3730E, the current deviates a total of 180 degrees (four 45 degree deviations) from its original path. As will be appreciated, although not shown otherwise, this process may continue until the current loops back onto itself along current path 3730A.

Fig. 37-a shows that there may be a threshold depth of ELR material 3700 (depth relates to the a-axis, as shown in fig. 39-a) required for forming a current loop in ELR material 3700. More specifically, as shown in fig. 37-a, a depth of ELR material 3700 sufficient to include five adjacent holes 3710B may be necessary to form a current loop in ELR material 3700. In other words, fewer holes than this number of holes 3710B may not provide a sufficient number of deviations (or turns) and subsequent paths for the current to loop back onto itself at this threshold depth of the ELR material 3700. If the depth of the ELR material 3700 is less than the threshold depth, a loop current may not be formed in the ELR material 3700, thereby preventing the meissner effect from occurring. Similarly, FIG. 37-A shows that there may be a threshold length of ELR material 3700 required for forming a current loop in the ELR material 3700 (the length relates to the b-axis, as shown in FIG. 39-A). More specifically, as inferred from fig. 37A, a length of ELR material 3700 sufficient to include five adjacent holes 3710B may be necessary to form a current loop in ELR material 3700. If the length of the ELR material 3700 is less than the threshold length, a loop current may not be formed in the ELR material 3700, thereby preventing the meissner effect from occurring. As will be appreciated, these threshold depths and/or lengths may be different for other ELR materials having different crystal structures than that shown in fig. 37-a, where the different crystal structures may be more or fewer holes, holes having different orientations, holes at different angles of deviation, etc.

Further, at each intersection 3740, these threshold depths and/or lengths assume that the current may deviate from a single turn. In other words, it is assumed in the illustrated example that the current deviates only by an increment of +/-45 degrees (versus 90 degrees or more) at each intersection 3740. As will be appreciated, the threshold depth and/or threshold length of the ELR material 3700 in which the meissner effect (or other superconducting phenomenon) does not occur may be smaller if a larger incremental deviation may occur or if a deviation occurs at a location other than the intersection 3740. Similarly, as will be appreciated, if a deviation occurs only at some of the intersections 3740 (but not all of the intersections 3740), the threshold depth and/or threshold length of the ELR material 3700 in which the meissner effect (or other superconducting phenomenon) does not occur may be greater. However, according to various implementations of the invention, the ELR material 3700 has a threshold depth and/or threshold length required to form the loop current.

According to various implementations of the invention, nanowires can be formed using ELR materials, wherein the nanowires exhibit extremely low resistance, but do not exhibit some other superconducting phenomenon (e.g., the Meissner effect), by controlling one or more dimensional parameters of the nanowires. For example, according to various implementations of the invention, the depth of the nanowire is selected to be less than a threshold depth of the ELR material required to form a loop current in the ELR material. According to various implementations of the invention, the length of the nanowire is selected to be less than a threshold length of the ELR material required to form a loop current in the ELR material. According to various implementations of the invention, the depth and length of the nanowires may be less than those thresholds required to form loop currents in the ELR material. These nanowires may then behave as ideal conductors along their depth and/or length without exhibiting other superconducting phenomena. In other words, according to various implementations of the invention, the nanowire has a threshold depth or length (and in some implementations, and/or with some ELR material, a possible threshold width) within which the nanowire operates as an ideal conductor and beyond which the nanowire operates as a superconductor. While discussed above in terms of a threshold depth and/or threshold length of the ELR material 3700, it will be appreciated from fig. 37-a that a threshold region of the ELR material 3700 may actually be required in certain circumstances to form the loop current.

For the purposes of this illustration, as will be appreciated, these thresholds may be expressed in terms of a number of adjacent holes 3710 along a given dimension, a number of cell crystals along a given dimension, or other number of unit measures related to the crystal structure of the ELR material 3700. As will also be appreciated, these thresholds may be expressed in terms of units of measurement (nanometers, angstroms, etc.).

Nanowires that operate as ideal conductors can be formed from ELR material 3700 of any length that provides a depth that does not exceed the threshold depth as described above, according to various implementations of the invention. Likewise, nanowires that operate as ideal conductors may be formed from ELR material 3700 of any depth that provides a length that does not exceed the threshold length as described above, in accordance with various implementations of the invention. More specifically, nanowires that operate as ideal conductors and do not exhibit the meissner effect may be formed from ELR material 3700A of any length that provides a depth that does not exceed the threshold depth as described above, in accordance with various implementations of the invention. Likewise, nanowires that operate as ideal conductors and do not exhibit the meissner effect may be formed from ELR material 3700 of any depth that provides a length that does not exceed the threshold length as described above, in accordance with various implementations of the invention.

As will be appreciated, changing the orientation of the ELR material in fig. 39A will change the relevant threshold dimensions required for the meissner effect to occur. For example, as will be appreciated, if the ELR material is oriented such that the a-axis and c-axis are interchanged (i.e., depth is referenced to the c-axis and width is referenced to the a-axis), then the width and/or length will be dimensional parameters to control the avoidance of the meissner effect.

As described above, nanowires can be formed from ELR material 3700, which can include conventional ELR materials (e.g., unmodified YBCO, etc.), modified ELR materials (e.g., ELR material 1060, chromium modified YBCO, etc.), new ELR materials, or other ELR materials. Additionally, in some implementations of the invention, nanowires can be formed by depositing the ELR material 3700 onto a substrate or buffer material, as will be appreciated. In some implementations of the invention, the nanowires may be formed by adhering the ELR material 3700 to a substrate, such as a circuit board, as will be appreciated.

In some implementations of the invention, nanowires can be formed and operated above a certain temperature, such as those utilizing a modified ELR material (e.g., modified ELR material 1060), where only a portion of the modified ELR material 1060 has pores 310 that remain at the certain temperature, and the portion of the modified ELR material 1060 has a depth that is less than a threshold depth above which loop current can be formed. For example, referring to fig. 23, the modified ELR material 1060 can operate at a certain temperature where only the

pores

310A and 310B are maintained. In this example, the

holes

310A and 310B may not correspond to a depth of the modified ELR material 1060 sufficient to form a loop current in the modified ELR material 1060 and that the meissner effect does not occur.

According to various implementations of the present invention, nanowires may be used to form various electrical components, including, but not limited to, nanowire connectors, nanowire contours (transducers), nanowire coils, and nanowire converters. Figure 40-a illustrates an example of a nanowire connector 4000 in accordance with various implementations of the invention. More specifically, fig. 40A-a illustrates a nanowire connector 4000A formed from a nanowire comprising ELR material oriented in a manner similar to that of fig. 39-a and described above, wherein the depth of the nanowire is less than a threshold depth required to form a loop current in the ELR material. Fig. 40B-a illustrates a nanowire connector 4000B formed from nanowires comprising ELR material from fig. 39-a oriented in an a-axis and c-axis interchanged manner, wherein the width of the nanowire is less than a threshold width required to form a loop current in the ELR material. As will be appreciated, other nanowire connectors 4000 may be formed from nanowires comprising ELR materials of different orientations. In some implementations of the invention, the nanowire connector 4000 includes a nanowire that is a perfect conductor but does not exhibit all of the characteristics of a superconductor. In some implementations of the invention, the nanowire connector 4000 includes a nanowire that is an ideal conductor but does not exhibit the meissner effect. In some implementations of the invention, nanowire connector 4000 includes nanowires formed from conventional HTS materials with controlled dimensional parameters such that the nanowires operate as ideal conductors but do not exhibit the meissner effect. In some implementations of the invention, the nanowire connector 4000 includes a nanowire formed of the modified ELR material 1060 with controlled dimensional parameters such that the nanowire operates as an ideal conductor but does not exhibit the meissner effect. In some implementations of the invention, the nanowire connector 4000 includes nanowires formed of a new ELR material with controlled dimensional parameters such that the nanowires operate as ideal conductors but do not exhibit the meissner effect. As will be appreciated, the nanowire connector 4000 may be used to connect one electrical component to another electrical component (not otherwise illustrated).

Fig. 41-a illustrates various single nanowire perimeters 4100 that may be formed from a single nanowire or nanowire segment according to various implementations of the invention. In some implementations of the invention, nanowire perimeter 4100A includes three nanowire segments 4110, namely nanowire segment 4110A, nanowire segment 4110B, and nanowire segment 4110C. In some implementations of the invention, nanowire perimeter 4100B comprises four nanowire segments 4110, namely nanowire segment 4110A, nanowire segment 4110B, nanowire segment 4110C, and nanowire segment 4110D. In some implementations of the invention, nanowire perimeter 4100C includes five segments 4110, namely nanowire segment 4110A, nanowire segment 4110B, nanowire segment 4110C, nanowire segment 4110D, and nanowire segment 4110E. The nanowire periphery 4100C differs from the nanowire periphery 4100B in the position of a pair of periphery ends. As will be appreciated, other locations for the ends of the perimeter can be used in these or other nanowire perimeters 4100. In some implementations of the invention, nanowire perimeter 4100D includes N nanowire segments 4110, namely nanowire segment 4110A, nanowire segment 4110B, nanowire segment 4110C, & and nanowire segment 4110N. In some implementations of the invention, the individual nanowire segments 4110 of the nanowire perimeter 4100 can be directly coupled to each other by the ELR material of the nanowire. In some implementations of the invention, individual nanowire segments 4110 may be coupled to each other ground through conductive materials, including but not limited to conductive metals. The leads of the nanowire perimeter 4100 (not otherwise shown) may or may not be formed from nanowires. As will be appreciated, the nanowire perimeters 4100 can be used for a variety of applications and can be formed in a variety of shapes and sizes depending, for example, on such applications. For example, as will be appreciated, the nanowire contours 4100 can be used to form so-called "current loops" having a variety of applications involving sensing and/or generating electric fields.

Figure 42-a illustrates an exemplary nanowire coil 4200 that can be formed from one or more individual nanowire perimeters 4100 according to various implementations of the invention. The individual nanowire perimeters 4100 can be separated from each other by a substrate or buffer material and coupled to each other by, for example, a coupler 4210. As shown, nanowire coil 4200 is formed from nanowire perimeter 4100V, nanowire perimeter 4100W, nanowire perimeter 4100X, nanowire perimeter 4100Y, and nanowire perimeter 4100Z. As will be appreciated, although fig. 42-a is shown as including five nanowire perimeters 4100, nanowire coil 4200 may include any number of nanowire perimeters 4100. Also as shown in fig. 42-a, nanowire coil 4200 is configured to conduct current through each nanowire perimeter 4100 in the same general direction (e.g., clockwise or counterclockwise). As will be appreciated, nanowire coil 4200 may be used for a variety of applications and may be formed into a variety of shapes and sizes depending, for example, on such applications.

Figure 43-a illustrates a differential nanowire coil 4300 that may be formed from one or more pairs of nanowire contours 4100 in accordance with various implementations of the invention. As shown in fig. 43-a, the nanowire coil 4300 is formed of two pairs of nanowire perimeters: a first pair comprising a nanowire perimeter 4100P and a nanowire perimeter 4100Q; and a second pair comprising nanowire contours 4100R and nanowire contours 4100S. Although figure 43-a is shown as including two pairs of nanowire contours 4100, any number of pairs can be used in various implementations of the invention. Further, in some implementations of the invention, the nanowire coil 4300 can include a single nanowire perimeter 4100 in addition to one or more pairs of nanowire perimeters 4100, as will be appreciated. The nanowire perimeters 4100 in each pair of nanowire perimeters 4100 are coupled to each other (e.g., by the coupler 4210) such that they conduct current in different directions from each other. For example, as shown in figure 43-a, the nanowire perimeter 4100P conducts current in a different direction than the nanowire perimeter 4100Q (i.e., one can conduct current clockwise while the other conducts current counterclockwise). The same applies to the nanowire perimeters 4100R and the nanowire perimeters 4100S. As will be appreciated, the nanowire coil 4300 may be used for various applications and may be formed into various shapes and sizes depending on, for example, such applications.

Figure 44-a illustrates a nanowire coil 4400 that can be formed from one or more concentric nanowire perimeters 4100 according to various implementations of the invention. As shown in fig. 44-a, the nanowire coil 4400 is formed from five nanowire mesh contours 4100, including nanowire contours 4100J, nanowire contours 4100K, nanowire contours 4100-L, nanowire contours 4100M, and nanowire contours N. Although fig. 44-a is shown as including five nanowire perimeters 4100, any number of nanowire perimeters 4100 may be used in various implementations of the invention. As shown in fig. 44-a, the nanowire perimeters 4100 are concentric with each other and the size of the continuous nanowire perimeters 4100 is reduced. For example, the nanowire perimeter 4100K fits inside the nanowire perimeter 4100J and is smaller than the nanowire perimeter 4100J. Likewise, the nanowire perimeter 4100L fits inside the nanowire perimeter 4100K and is smaller than the nanowire perimeter 4100K; the nanowire perimeter 4100M fits inside and is smaller than the nanowire perimeter 4100-L; and the nanowire perimeter 4100N fits inside the nanowire perimeter 4100M and is smaller than the nanowire perimeter 4100M. As shown in fig. 44-a, the nanowire perimeters 4100 couple to one another to form, for example, a "spiral" nanowire coil 4400. As will be appreciated, the nanowire coil 4400 may be used for a variety of applications and may be formed in a variety of shapes and sizes. Whereas nanowire coil 4200 and nanowire coil 4300 can be considered three-dimensional in nature (i.e., nanowire perimeters 4100 in each "stack" one another), nanowire coil 4400 can be considered two-dimensional in nature (i.e., without a stack of nanowire perimeters 4100).

45A-A and 45B-A illustrate various nanowire converters 4500 according to various implementations of the inventionMay be used to convert energy from one form of energy to another. For example, a nanowire converter 4500A comprising at least two nanowire segments 4110 configured as dipoles can be used to convert electromagnetic radiation to an alternating voltage (e.g., V) appearing across its ends_rms). In such a mode, the nanowire converter 4500A can be considered a receptor (e.g., receiving or otherwise responding to electromagnetic radiation). Instead, nanowire converter 4500A can be used to convert an alternating voltage appearing across its ends into electromagnetic radiation. In such a mode, the nanowire converter 4500A can be considered an emitter (i.e., sending or otherwise transmitting electromagnetic radiation).

By way of another example, a nanowire converter 4500B including nanowire contours 4100 (and which may also be considered nanowire coils 4100) may be used to sense a varying current carried by conductor 4510. More specifically, current carried by the conductor 4510 generates an electromagnetic field, thereby generating a current through the ends of the nanowire converter 4500B, according to well-known principles of physics. Instead, a varying current applied to the end of the nanowire converter 4500B may be used to induce a current in the conductor 4510. An electromagnetic field is induced by the changing current at the end of the nanowire converter 4500B, which in turn induces a current in the conductor 4510.

By way of further example, nanowire converter 4500C, which includes nanowire coil 4200, can be used to sense a varying current carried in conductor 4510. More specifically, current carried by the conductor 4510 generates an electromagnetic field, thereby generating a current through the ends of the nanowire converter 4500C, according to well-known principles of physics. Instead, a varying current applied to the end of the nanowire converter 4500C may be used to induce a current in the conductor 4510. Again, the varying current through the ends of the nanowire converter 4500C induces an electromagnetic field in the loop of the nanowire converter 4500C, which in turn induces a current in the conductor 4510.

By way of yet a further example, a nanowire transducer 4500D including a nanowire coil 4400 can be used to sense a varying current carried in a conductor 4510. More specifically, current carried through the conductor 4510 generates an electromagnetic field, thereby generating current through the ends of the nanowire converter 4500D, in accordance with well-known principles of physics. Instead, a varying current applied to the end of the nanowire converter 4500D may be used to induce a current in the conductor 4510. Again, the varying current through the ends of nanowire converter 4500D induces an electromagnetic field in the loop of nanowire converter 4500C, which in turn induces a current in conductor 4510.

As will be appreciated, with reference to fig. 45-a, conductor 4510 is not necessary in the various implementations of the invention discussed above. In fact, any varying electromagnetic field present in the "loop" of the nanowire converter 4500, whether from a conductor 4510 or otherwise, generates a current through the ends of the nanowire converter 4500. Likewise, a varying current through the end of the nanowire converter 4500 generates an electromagnetic field in the loop of the nanowire converter 4500. As will be appreciated, a "varying electromagnetic field" involving the above may occur due to a change in the field in the loop of the nanowire converter 4500, a change in position relative to the field nanowire converter 4500, a change in position relative to the conductor 4510 nanowire converter 4500, and/or a change in the current carried by the conductor 4510 as will also be appreciated.

In some implementations, nanowires including the modified ELR material can be described as follows:

a nanowire comprising a modified ELR material.

A nanowire comprising multiple layers of a modified ELR material, each layer of the multiple layers of ELR material separated from another layer of the multiple layers by a buffer or substrate material.

An electrical system, comprising: a first nanowire comprising a modified ELR material; and a second nanowire comprising a non-ELR material, wherein the first nanowire is electrically coupled to the second nanowire.

An ELR nanowire, comprising: an ELR material having three-dimensional parameters including length, width, and depth, wherein at least one of the dimensional parameters is less than a threshold value, such that the ELR nanowires do not exhibit at least one superconducting phenomenon when operated at extremely low resistance.

An ELR nanowire, comprising: an ELR material having three-dimensional parameters including length, width, and depth; and a modifying material disposed on a suitable surface of the ELR material, wherein at least one of the dimensional parameters is less than a threshold value such that the ELR nanowire does not exhibit at least one superconducting phenomenon when operating at a very low resistance.

An ELR nanowire perimeter, comprising: at least one ELR nanowire segment, each ELR nanowire segment comprising: an ELR material having three-dimensional parameters including length, width, and depth, wherein at least one of the dimensional parameters is less than a threshold value, such that the ELR nanowire segments do not exhibit at least one superconducting phenomenon when operated at extremely low resistance.

An ELR nanowire perimeter, comprising: a plurality of ELR nanowire segments, each of the plurality of ELR nanowire segments comprising an ELR material having three-dimensional parameters including a length, a width, and a depth, a modifying material disposed on a suitable surface of the ELR material, wherein at least one of the dimensional parameters is less than a threshold value such that the ELR nanowire segments do not exhibit at least one superconducting phenomenon when operated at extremely low resistance.

An ELR nanowire coil, comprising: at least one ELR nanowire perimeter, each of the at least one ELR nanowire perimeter comprising a plurality of ELR nanowire segments, each of the plurality of ELR nanowire segments coupled to at least one other of the plurality of ELR nanowire segments to substantially form a polygon, each of the at least one ELR nanowire segments comprising: an ELR material having three-dimensional parameters including length, width, and depth, wherein at least one of the dimensional parameters is less than a threshold value, such that the ELR nanowire segments do not exhibit at least one superconducting phenomenon when operated at extremely low resistance.

An ELR nanowire coil, comprising: a plurality of ELR nanowire perimeters, each of the plurality of ELR nanowire perimeters comprising a plurality of ELR nanowire segments, each of the plurality of ELR nanowire segments coupled to at least one other of the plurality of ELR nanowire segments to substantially form a polygon, each of the plurality of ELR nanowire segments comprising: an ELR material having three-dimensional parameters including a length, a width, and a depth, a modifying material disposed on a suitable surface of the ELR material, wherein at least one of the dimensional parameters is less than a threshold value such that the ELR nanowire segments do not exhibit at least one superconducting phenomenon when operated at extremely low resistance.

A nanowire converter, comprising: at least one nanowire segment, wherein the nanowire converter either senses or induces an electromagnetic field.

A nanowire converter, comprising: at least one nanowire segment arranged in an electromagnetic field, wherein the nanowire converter senses the electromagnetic field and converts it into an alternating voltage.

A nanowire converter, comprising: at least one nanowire segment electrically coupled to an alternating voltage source, wherein the nanowire converter induces an electromagnetic field in response to the alternating voltage source.

Chapter 2 Josephson junctions formed of ELR material

This section of the specification relates to fig. 1-36 and 37-a through 46J; all reference numerals included in this section therefore refer to elements found in these figures.

Fig. 46A-a to 46H-a illustrate various josephson junctions 4600 (shown in the figures as josephson junction 4600A in fig. 46A-a, josephson junction 4600B in fig. 46B-a, josephson junction 4600C in fig. 46C-a, josephson junction 4600D in fig. 46D-a, josephson junction 4600E in fig. 46E-a, josephson junction 4600F in fig. 46F-a, josephson junction 4600G in fig. 46G-a, and josephson junction 4600H in fig. 46H-a) according to one or more implementations of the invention. Fig. 46A-a shows a josephson junction 4600A, which includes two ELR conductors 4620 separated by a barrier (barrier) 4610. In some implementations of the invention, each ELR conductor 4620 includes an ELR material that operates with improved operating characteristics according to various implementations of the invention. For example, in some implementations of the invention, each ELR conductor 4620 includes a modified ELR material 1060; and in some implementations of the invention, each ELR conductor 4620 includes a new ELR material having improved operating characteristics. In some implementations of the invention, each ELR conductor 4620 includes nanowire segments 4110 in accordance with various implementations of the invention.

In some implementations of the invention, the barrier 4610 includes an insulating material disposed between the ELR conductors 4620 and electrically coupled to the ELR conductors 4620. In these implementations, as will be appreciated, the barrier 4610 is very thin, typically 30 angstroms or less. In some implementations of the invention, the barriers 4610 include a conductive material, such as a conductive metal, disposed between the ELR conductors 4620. In some implementations of the invention, the barriers 4610 include a conductive material, such as a ferromagnetic metal, disposed between the ELR conductors 4620. In these implementations, as will be appreciated, the barrier 4610 may be thicker than the insulating material, typically a few microns thick. In some implementations of the invention, the barriers 4610 include a semi-conductive material, such as a conductive metal, disposed between the ELR conductors 4620. In some implementations of the invention, barrier 4610 comprises other materials, such as, but not limited to, ELR materials that are different from ELR conductor 4620 (i.e., in a sense, such differences may have different chemical compositions, different crystal structures, different crystal structure orientations, different phases, different grain boundaries, different critical currents, different critical temperatures, or other differences). In some implementations of the invention, barrier 4610 comprises the same ELR material as ELR conductor 4620, but differs in one or more mechanical aspects in a sense (i.e., the thickness of the ELR material is different from ELR conductor 4620, the width of the ELR material is different from ELR conductor 4620, or other mechanical differences). In some implementations, the barriers 4610 include partial or complete gaps formed between the ELR conductors 4620. In these implementations, the barrier 4610 may include a gap filled with air or other gas. In some implementations of the invention where ELR conductor 4620 includes modified ELR material 1020, barrier 4610 may include unmodified ELR material 360.

Conventional josephson junctions of the general type include: superconductor-insulator-superconductor ("SIS"); superconductor-normal conductor-superconductor ("SNS"); superconductor-ferromagnetic metal-superconductor ("SFS"); superconductor-insulator-normal conductor-insulator-superconductor ("SINIS"); superconductor-insulator-normal conductor-superconductor ("SINS"); superconductor-shrink-superconductor ("SCS"); and others. Fig. 46I-a shows various examples of these josephson junctions, including but not limited to (from left to right, top down): a tunnel junction (SIS); point contact; daydem bridge (SCS); a sandwich knot; a bridge of variable thickness; and an ion implantation bridge. Fig. 46J-a shows various other examples of josephson junctions, including but not limited to (left to right, top to bottom): a step edge SNS junction; step edge grain boundary junction; a graded edge junction; and a bi-crystalline grain boundary junction. According to various implementations of the present invention, instead of the superconducting material of a conventional josephson junction, any of these aforementioned types of josephson junctions may be configured using modified ELR materials such as those discussed above.

In general, josephson junction 4600 exhibits the so-called josephson effect, where current flowing through ELR conductors 4620 in the ELR state can also flow through the junction between ELR conductors 4620 in the very low resistance state, where the junction may include, for example, a barrier 4610. The current flowing through barrier 4610 is referred to as josephson current. Up until a critical current is reached, josephson current can flow through the barrier 4610 with very low resistance. However, when the threshold current of the barrier 4610 is exceeded, a voltage appears across the barrier 4610, thereby further reducing the threshold current, resulting in a larger voltage across the barrier 4610. As will be appreciated, the josephson effect of josephson junction 4600 may be utilized in various circuits.

Fig. 46A-a illustrate various implementations of josephson junctions 4600A in a "wire structure" and include, but are not limited to, bulk material conductors, wires, nanowires, traces and other configurations as will be understood.

Fig. 46B-a illustrates josephson junctions 4600B in a "foil structure" or "plate structure" and includes, but is not limited to, bulk material plates, foils, or other layered structures as will be understood in accordance with various implementations of the invention. For example, the josephson junction 4600B may be used to detect photons incident on one of the ELR conductors 4620. As will be appreciated, there are other uses for josephson junction 4600B.

Fig. 46C-a and 46D-a show a josephson junction 4600 in a so-called "wire structure". Fig. 46C-a shows a josephson junction 4600C including an ELR conductor 4620, the ELR conductor 4620 including a modified ELR material having improved operating characteristics according to various implementations of the invention. As shown in fig. 46C-a, in some implementations of the invention, each ELR conductor 4620 in josephson junction 4600C includes a modified ELR material including a modified material 2720 laminated onto ELR material 3110. In some implementations of the invention, the modified ELR material may be laminated onto the substrate 2420 (i.e., the ELR material is laminated onto the substrate 2420). As will be appreciated, ELR conductor 4620 may include other forms of modified ELR materials. As shown, barrier 4610 is disposed between ELR conductors 4620 and is electrically coupled to ELR conductors 4620.

Fig. 46D-a shows a josephson junction 4600D including an ELR conductor 4620, the ELR conductor 4620 including a modified ELR material having improved operating characteristics according to various implementations of the invention. As shown in fig. 46D-a, in some implementations of the invention, each ELR conductor 4620 of josephson junction 4600D includes a modified ELR material including a modified material 2720 laminated onto ELR material 3110. In some implementations of the invention, the modified ELR material may be laminated onto the substrate 2420 (i.e., the ELR material is laminated onto the substrate 2420). As will be appreciated, ELR conductor 4620 may include other forms of modified ELR materials. As shown, barrier 4610 is disposed between ELR conductors 4620 and electrically coupled to ELR conductors 4620, and more specifically barrier 4610 is disposed between layers of ELR material 3110 and under a continuous layer of modifying material 2720. As will be appreciated, the josephson junction 4600D may be desirable from a perspective beyond the fabrication of the josephson junction 4600C, for example. In some implementations of the invention, such as, but not limited to, those shown in fig. 46C-a and 46D-a, barrier 4610 may include a modifying material 2720.

Fig. 46E-a shows a josephson junction 4600E including an ELR conductor 4620, the ELR conductor 4620 including a modified ELR material having improved operating characteristics according to various implementations of the invention. As shown in fig. 46E-a, in some implementations of the invention, each ELR conductor 4620 of josephson junction 4600E includes a modified ELR material including a modified material 2720 laminated onto ELR material 3110. As shown in fig. 46E-a, a barrier 4610 is formed in a layer of modifying material 2720 on a continuous layer of ELR material 3110 by interrupting (e.g., a gap). Such gaps in the layer of modified material 2720 can be formed by various processing techniques including etching, milling, shadow masking, or other processing techniques as will be understood. Josephson junction 4600E is then formed from two ELR conductors 4620, which ELR conductors 4620 include a modified ELR material (e.g., a layer of modified material 2720 on ELR material 3110) separated by a barrier 4610 that includes a layer of ELR material 3110 without modified material 2720 (i.e., a layer of unmodified ELR material 3110). As will be appreciated, josephson junctions 4600E may be desirable, for example, from a perspective that exceeds fabrication of other josephson junctions.

Fig. 46F-a shows a josephson junction 4600F including an ELR conductor 4620, the ELR conductor 4620 including a modified ELR material having improved operating characteristics according to various implementations of the invention. As shown in fig. 46F-a, in some implementations of the invention, each ELR conductor 4620 of josephson junction 4600F includes a modified ELR material including a modified material 2720 laminated onto ELR material 3110. As with josephson junction 4600E, the barrier 4610 of josephson junction 4600F is formed by a gap in the layer of modified material 2720 on a continuous layer of ELR material 3110. Thus, josephson junction 4600F is also formed by two ELR conductors 4620 comprising the modified ELR material, which is separated by barrier 4610 comprising unmodified ELR material 3110. In some implementations of the invention, a layer of insulating or buffer material 4630 may be laminated over the modified material 2720, and as shown in fig. 46F-a, such material 4630 may fill gaps in the layer of modified material 2720, thereby providing a further aspect of the barrier 4610.

Fig. 46G-a shows a josephson junction 4600G including an ELR conductor 4620, the ELR conductor 4620 including a modified ELR material having improved operating characteristics according to various implementations of the invention. As shown in fig. 46G-a, in some implementations of the invention, each ELR conductor 4620 of josephson junction 4600G includes a modified ELR material including a modified material 2720 laminated onto ELR material 3110. As with

josephson junctions

4600E and 4600F, the barrier 4610 of the josephson junction 4600G is formed by a gap in the layer of modifying material 2720 on the layer of ELR material 3110. Furthermore, barrier 4610 of josephson junction 4600G also includes a partial gap (i.e., mechanical shrinkage in depth or thickness) in the layer of ELR material 3110. For example, processing techniques used to create gaps in the layer of modified material 2720 may intentionally or unintentionally create portions of the gaps in the underlying layer of ELR material 3110. Thus, josephson junction 4600G is formed by two ELR conductors 4620 comprising a modified ELR material separated by barrier 4610 comprising unmodified ELR material 3110 having further mechanical contraction. In some implementations of the invention, a layer of insulating or buffer material 4630 may be laminated over modifying material 2720, and as shown in fig. 46G-a, such material 4630 may fill gaps in the layer of modifying material 2720, as well as portions of gaps in the layer of ELR material 3110, thereby providing further aspects of barrier 4610.

Fig. 46H-a shows josephson junction 4600H including ELR conductor 4620, ELR conductor 4620 including a modified ELR material having improved operating characteristics according to various implementations of the invention. As shown in fig. 46H-a, in some implementations of the invention, each ELR conductor 4620 of josephson junction 4600H includes a modified ELR material including a modified material 2720 laminated onto ELR material 3110. As above, the barrier 4610 of the josephson junction 4600H is formed by a gap in both the layer of modified material 2720 and the layer of ELR material 3110. Thus, josephson junction 4600H is formed from two ELR conductors 4620 comprising the modified ELR material separated by the gap. In some implementations of the invention, a layer of insulating or buffer material 4630A may be laminated over modifying material 2720, and such material 4630 may fill gaps in both the layer of modifying material 2720 and the layer of ELR material 3110 as shown in fig. 46H-a.

In some implementations of the invention, as will be appreciated, a plurality of josephson junctions 4600 may be organized into a one-dimensional array of serially coupled josephson junctions 4600. In some implementations of the invention, as will be appreciated, the plurality of josephson junctions 4600 may be organized into a two-dimensional array of josephson junctions comprising a plurality of one-dimensional arrays of serially coupled josephson junctions 4600 coupled parallel to each other.

In some implementations, josephson junctions including modified ELR materials can be described as follows:

a josephson junction comprising: a first ELR conductor comprising an ELR material having improved operating characteristics; a second ELR conductor comprising an ELR material; and a barrier material disposed between the first ELR conductor and the second ELR conductor.

A josephson junction comprising: a first ELR conductor comprising an ELR material having a critical temperature above 150K; a second ELR conductor comprising an ELR material; and a barrier material disposed between the first ELR conductor and the second ELR conductor.

A circuit, comprising: a plurality of josephson junctions, wherein each of the plurality of josephson junctions comprises: a first ELR conductor comprising an ELR material having a critical temperature above 150K, a second ELR conductor comprising an ELR material, and a barrier material disposed between the first ELR conductor and the second ELR conductor.

A josephson junction comprising: a first conductor ELR comprising a modified ELR material; a second ELR conductor comprising a modified ELR material; and a barrier material disposed between the first ELR conductor and the second ELR conductor, wherein the modified ELR material includes a first layer of ELR material and a second layer of a modifying material bonded to the first layer of ELR material, wherein the modified ELR material has improved operating characteristics over those of the ELR material alone.

A josephson junction comprising: a first ELR conductor comprising a modified ELR material; a second ELR conductor comprising a modified ELR material; and a barrier material disposed between the first ELR conductor and the second ELR conductor, wherein the modified ELR material includes a first layer of ELR material and a second layer of modified material bonded to the first layer of ELR material, wherein the modified ELR material has a critical temperature greater than 150K.

A circuit comprising a plurality of josephson junctions, wherein each of the plurality of josephson junctions comprises a first ELR conductor comprising a modified ELR material; a second ELR conductor comprising a modified ELR material; and a barrier material disposed between the first ELR conductor and the second ELR conductor, wherein the modified ELR material includes a first layer of ELR material and a second layer of modified material bonded to the first layer of ELR material, wherein the modified ELR material has a critical temperature greater than 150K.

A josephson junction comprising: a first layer of ELR material; and a second layer of a modifying material bonded to the first layer of ELR material, the second layer having a first portion and a second portion, gaps formed between the first portion and the second portion and on the first layer of ELR material, wherein the first portion of the second layer of the modifying material bonded to the first layer of ELR material forms a first portion of the modified ELR material, wherein the second portion of the second layer of the modifying material bonded to the first layer of ELR material forms a second portion of the modified ELR material, and wherein the gaps in the second layer of the modifying material provide unmodified portions of the ELR material, wherein the unmodified portions of the ELR material form a barrier to a josephson junction, wherein the modified ELR material has improved operating characteristics over those of the ELR material alone.

A josephson junction comprising: a first layer of ELR material; and a second layer of a modifying material bonded to the first layer of ELR material, the second layer having a first portion and a second portion, gaps formed between the first portion and the second portion and on the first layer of ELR material, wherein the first portion of the second layer of the modifying material bonded to the first layer of ELR material forms a first portion of the modified ELR material, wherein the second portion of the second layer of the modifying material bonded to the first layer of ELR material forms a second portion of the modified ELR material, and wherein the gaps in the second layer of the modifying material provide unmodified portions of the ELR material, wherein the unmodified portions of the ELR material form a barrier to a josephson junction, wherein the modified ELR material operates in an ELR state at temperatures above 150K.

A circuit, comprising: a first layer of ELR material; and a second layer of a modifying material bonded to the first layer of ELR material, the second layer having a plurality of portions of the modifying material with a gap formed between each pair of adjacent ones of the plurality of portions of the modifying material, wherein each of the plurality of portions of the modifying material is bonded to the first layer of the ELR material to form a portion of the modified ELR material, and wherein the gap formed between each pair of adjacent ones of the plurality of portions of the modifying material provides an unmodified portion of the ELR material, wherein the unmodified portion of the ELR material forms a barrier to a josephson junction, wherein the modified ELR material operates in an ELR state at temperatures above 150K.

A josephson junction comprising: a first ELR wire comprising an ELR material having a critical temperature above 150K; a second ELR wire comprising an ELR material; and a barrier material disposed between the first ELR wire and the second ELR wire.

A josephson junction comprising: a first ELR foil comprising an ELR material having a critical temperature above 150K; a second ELR foil comprising an ELR material; and a barrier material disposed between the first ELR foil and the second ELR foil.

Chapter 3 QUIDS formed of ELR material

This section of the specification relates to FIGS. 1-36 and 37-A through 53-A; all reference numerals included in this section therefore refer to elements found in these figures.

Fig. 47-a illustrates ELR QUID4700 (i.e., ELR quantum interference device) including ELR loop 4710 with a single ELR josephson junction 4600 according to various implementations of the invention. More specifically, ELR loop 4710 includes an ELR conductor 4620 formed into a loop with a single barrier 4610 disposed in a branch of the loop to form an ELR josephson junction 4600. ELR QUID4700 generally operates in a manner similar to other quantum interference devices including superconducting quantum interference devices or "SQUIDs". The operation and use of SQUIDs is generally well known. As will be appreciated, ELR QUID4700 may sometimes be referred to as a "single junction QUID," a junction QUID, "or" RFQUID. ELR QUID4700 is formed from ELR material that operates with improved operating characteristics according to various implementations of the invention. For example, in some implementations of the invention, ELR QUID4700A includes modified ELR material 1060; in some implementations of the invention, ELR QUID4700 comprises a perforated ELR material with improved operating characteristics; and in some implementations of the invention, ELR QUID4700 includes a new ELR material according to various implementations of the invention.

In general, as will be appreciated, reference to ELR QUID4700 can be used to detect a magnetic field flowing through ELR loop 4710 (i.e., perpendicular to and through the interior region formed by ELR loop 4710). More specifically, ELR QUID4700 may be coupled to an RF generator that induces a current in ELR loop 4710. Such an RF generator, sometimes referred to as an AC bias circuit 5000, is shown in fig. 50-a. The AC bias circuit 5000 utilizes AC current 5020 through inductor 5010 to generate an RF field, which in turn induces a current in the ELR loop 4710 of the ELR quad 4700. In various implementations of the invention, the current in ELR loop 4710 (which may be controlled via current 5020 flowing through inductor 5010) is maintained at or slightly below the critical current of barrier 4610 of josephson junction 4600 in ELR qid 4700. As will be appreciated, the magnetic field flowing through the interior region of ELR loop 4710 causes the current in ELR loop 4710 to exceed the critical current of barrier 4610, thereby generating a voltage across barrier 4610 that may be detected and/or measured.

Fig. 48A-a shows dual-feed ELR QUID4800, generally, and more specifically, dual-feed ELR QUID 4800A. According to various implementations of the invention, ELR QUID4800A includes an ELR loop 4710 with a single ELR josephson junction 4600 and two feeds 4810 (sometimes referred to as an input feed 4810A and an output feed 4810 depending on the current flow direction through ELR QUID 4800A). The feeds 4810 are symmetrically arranged in the ELR loop 4710 to ensure that the current through each branch of the ELR loop 4710 is equal. Likewise, ELR loop 4710 is sometimes referred to as a symmetric ELR loop.

ELR loop 4710 of ELR QUID4800A includes an ELR conductor 4620 formed into a loop with a single barrier 4610 disposed in a branch of the loop to form an ELR josephson junction 4600. The ELR QUID4800 can be formed from ELR materials that operate with improved operating characteristics according to various implementations of the invention. For example, in some implementations of the invention, ELR QUID4800 includes modified ELR material 1060; in some implementations of the invention, ELR QUID4800 comprises a perforated ELR material with improved performance characteristics; and in some implementations of the invention, ELR QUID4800 includes a novel ELR material in accordance with various implementations of the invention.

Fig. 48B-a illustrates a dual feed ELR QUID4800B according to various implementations of the invention. ELR QUID4800B differs from ELR QUID4800A in that power feed 4810 is offset from the central axis of ELR loop 4710 such that power feed 4810 is disposed proximate branch 4830 (which includes barrier 4610) of ELR loop 4710 and distal from branch 4820 of ELR loop 4710. As depicted, the power feed 4810 is disposed asymmetrically in the ELR loop 4710. Although not shown otherwise, in various implementations of the invention, the feed 4810 may be offset from the central axis of the ELR loop 4710 such that the feed 4810 is disposed proximate to the branch portion 4820 and distal from the branch portion 4830. Similarly, in various implementations of the invention (not otherwise shown), one feed may be disposed proximate to branch 4820, while another feed may be disposed proximate to branch 4830. As will be appreciated, the location of the feed 4810 in the ELR loop 4710 may change the respective flow of current through each

leg

4820, 4830 and thus change the overall operation and/or sensitivity of the ELR QUID 4800B. Likewise, ELR loop 4710 of ELR QUID4800B is sometimes referred to as an asymmetric ELR loop.

FIG. 48C illustrates a dual feed ELR QUID4800C in accordance with various implementations of the invention. ELR QUID4800C differs from ELR QUID4800A in that branch 4840 may be wider than branch 4850 of ELR loop 4710 (which includes barrier 4610). Thus, as depicted, the

branches

4840, 4850 represent another asymmetry that may be used in the ELR loop 4710. Although not shown otherwise, in various implementations of the invention, branches 4850 may be wider than branches 4840. As will be appreciated, the width of the

branches

4840, 4850 in ELR loop 4710 may vary the respective flow of current through each

branch

4840, 4850 and, thus, the overall operation and/or sensitivity of ELR quit 4800C. Likewise, ELR loop 4710 of ELR QUID4800C is sometimes referred to as an asymmetric ELR loop.

In general, the ELR QUID4800 referred to can be used as a fast single quantum flux ("RSQF") logic that can be used to generate a single pulse when the flux state of the ELR QUID4800A changes. In other words, ELR QUID4800 will generate a single pulse when the field through the inner region formed by ELR loop 4710 changes. As will be appreciated, the pulses generated by ELR QUID4800 typically have relatively short pulse widths.

Fig. 49A-a show two josephson junctions ELR QUID4900 doubly fed, typically, and more particularly, two josephson junctions ELR QUID4900A doubly fed. According to various implementations of the invention, ELR QUID4900A includes ELR loop 4710 with two ELR josephson junctions 4600 and two feeds 4810. As shown, ELR QUID4900 includes a symmetrical loop 4710. ELR loop 4710 of ELR QUID4900A includes an ELR conductor 4620 formed into a loop having two barriers 4610, each arranged in a branch of the loop to form an ELR josephson junction 4600. ELR QUID4900 can be formed from ELR materials that operate with improved operating characteristics according to various implementations of the invention. For example, in some implementations of the invention, ELR QUID4900 includes a modified ELR material 1060; in some implementations of the invention, ELR QUID4900 includes a perforated ELR material with improved operating characteristics; and in some implementations of the invention, ELR QUID4900A includes a new ELR material in accordance with various implementations of the invention.

Fig. 49B-a shows two josephson junctions ELR QUID4900B for dual feeding according to various implementations of the invention. ELR QUID4900B includes an asymmetrical ELR loop 4710 because, as discussed above with reference to FIG. 48B-A, the feed 4810 is offset from the central axis of the ELR loop 4710. Although not shown otherwise, in various implementations of the invention, the feed 4810 may be offset from the central axis of the ELR loop 4710 such that the feed 4810 is disposed proximate to the branch portion 4820 and distal from the branch portion 4830. Similarly, in various implementations of the invention (not otherwise shown), one feed may be disposed proximate to branch 4820, while another feed may be disposed proximate to branch 4830. As will be appreciated, the location of the feed 4810 in the ELR loop 4710 may change the respective flow direction of current through each

leg

4820, 4830 and thus change the overall operation and/or sensitivity of the ELR QUID 4900B.

Fig. 49C-a shows two josephson junctions ELR QUID4900C for dual feeding according to various implementations of the invention. ELR QUID4900C includes an asymmetrical ELR loop 4710 because the size of

branches

4840, 4850 differ from each other as discussed above with reference to FIG. 48C-A. Although not shown otherwise, in various implementations of the invention, branches 4850 may be wider than branches 4840. As will be appreciated, the width of the

branches

branch

4840, 4850 and, thus, the overall operation and/or sensitivity of ELR quit 4900C.

As will be appreciated, while ELR QUID4900A in fig. 49A-a through 49C-a is shown with two josephson junctions 4600, ELR QUID4900A may include three or more josephson junctions 4600. In general, such ELR QUID4900 can be considered a parallel array of josephson junctions 4600 interconnected with ELR segments 5320 (as will be described in further detail below with reference to fig. 53-a).

In general, as will be appreciated, the ELR QUID4900 referred to may be used to detect the magnetic field of the inner region formed by the flow via the ELR loop 4710. More specifically, as shown in FIG. 51-A, ELR QUID4900 may be used with the DC bias circuit 5100A. DC bias circuit 5100 utilizes DC current 5120 to provide a bias current through each leg of ELR loop 4710 of ELR QUID 4900. In this configuration, ELR QUID4900 is sometimes referred to as DC QUID 4900. In various implementations of the invention, the bias current through the leg in ELR loop 4710 is maintained at or slightly below the critical current of barrier 4610A of josephson junction 4600 in ELR QUID 4900. As will be appreciated, the magnetic field flowing through the inner region formed by ELR loop 4710 causes the current in ELR loop 4710 to exceed the critical current of barrier 4610A ", thereby generating a voltage across barrier 4610 that can be detected and/or measured. As will be appreciated, in general ELR QUID4900 is more sensitive to magnetic fields than, for example, ELR QUID 4700.

The structure of ELR QUID4900 according to various implementations of the invention is now described with reference to FIG. 53-A. As will be appreciated, the following description may be applied to various implementations of ELR QUIDs 4700, 4800. As shown in FIG. 53-A, ELR QUID4900 may be comprised of a plurality of ELR segments 5320. Each ELR segment 5320 can have a structure similar to nanowire segment 4110. In some implementations of the invention, ELR segments 5320 may have larger dimensions than nanowire segments 4110, and in many cases much larger. In some implementations of the invention, ELR segment 5320 includes nanowire segment 4110. In some implementations of the invention, ELR section 5320 includes ELR materials such as those described above.

In some implementations of the invention, ELR QUID4900 may include a feed 4810 formed of ELR materials such as those described above. In some implementations of the invention, the ELR QUID4900 can include a power feed 4810 formed of a material different from the ELR material. In some implementations of the invention, the ELR QUID4900 may include a power feed 4810 formed of a conductive material. In some implementations of the invention, the ELR QUID4900 may include a power feed 4810 formed of a conductive metal. In some implementations of the invention, ELR QUID4900 may include one feed 4810 formed of one material and another feed 4810A formed of another material.

As will be appreciated, in some implementations of the invention, various interfaces 5310 (shown as interface 5310A, interface 5310B, and interface 5310C) may be used between ELR segments 5320 to form ELR loop 4710. (as will be appreciated, not all interfaces 5310 in ELR loop 4710 are shown for convenience.) according to various implementations of the invention, interfaces 5310 represent transitions between the orientations of the crystal structures of one ELR segment 5320 and another ELR segment 5320.

ELR qids 4700, 4800, 4900 (hereinafter interchangeably referred to as ELR qids) often find their way into various circuits and/or applications. For example, both ELR QUID4700 and ELR QUID4900 can be used to form a very sensitive magnetometer (as shown in FIGS. 52A-A and discussed below). As will be appreciated, depending on the complexity of the biasing, amplification and feedback circuitry employed (not otherwise shown), a magnetometer may be formed which detects one part per billion (10) of the Earth's magnetic field which is detectable^-10) An order of magnitude magnetic field.

Fig. 52A-a through 52C-a illustrate various gradiometers 5200 in accordance with various implementations of the invention. In general, the gradiometer 5200 is an instrument capable of measuring changes or gradients in a magnetic field. As will be appreciated, fig. 52A-a illustrate the use of a gradiometer 5200A (also referred to as a magnetometer 5200A) of the ELR QUID4700, 4900 to measure the magnetic field through the loop of the loop circuit 5210A. As will be appreciated, the ELR QUID4700, 4900 may be magnetically shielded.

As will be appreciated, fig. 52B-a shows a gradiometer 5200B which uses the ELR QUID4700 to measure the first derivative of the magnetic field through the loop of the loop circuit 5210B. More specifically, the two loops of the loop circuit 5210B are configured to be equal in size, parallel to each other, and wound with opposite inductances such that the currents induced in each loop cancel each other out in the presence of a uniform field. With such a configuration, the loop in the loop circuit 5210B captures the difference between loops that would exist in the varying field.

As will be appreciated, fig. 52C-a shows a gradiometer 5200C which uses the ELR QUID4700 to measure the second derivative of the magnetic field through the loop of the loop circuit 5210C. More specifically, the four loops of the loop circuit 5210C are configured to be equal in size, parallel to each other, and wound as shown, such that the currents induced in each loop cancel each other out in the presence of a uniformly varying magnetic field. With this configuration, the loop of the loop circuit 5210B captures the rate of change in the field passing through the loop.

FIG. 53-A illustrates an exemplary ELR QUID5300 in further detail, in accordance with various implementations of the invention. As shown, ELR QUID5300 can include a plurality of ELR segments 5320 (shown in FIG. 53-A as potential intersection 5310A, potential intersection 5310B, or potential intersection 5310C) coupled together at an exemplary intersection 5310. For example, two ELR segments 5320 can form intersection 5310 by one of

potential intersections

5310A, 5310B, or 5310C. In some implementations of the invention,

potential intersection points

5310A and 5310C form a vertical intersection point between two ELR segments 5320; however, potential intersection point 5310B forms a 45% intersection point between two ELR segments 5320; and as will be appreciated, other potential intersections are possible. One or more barriers 4610 (two are shown in fig. 53-a) are disposed between two ELR segments 5320 to form a josephson junction 4600. As also shown, the plurality of ELR sections 5320 form a loop 4710 having at least one barrier 4610 disposed between two of the plurality of ELR sections 5320.

In some implementations of the invention, two or more ELR QUIDs may be coupled together in parallel. In some implementations of the invention, two or more ELR QUIDs may be coupled together in series. In some implementations of the invention, two or more ELR QUIDs may be coupled together in series and also coupled in parallel with at least one other ELR QUID. In some implementations of the invention, an N by M matrix of ELR QUIDs may be formed on a surface (planar or otherwise) as a matrix of sensors capable of sensing, measuring, and/or locating various fields in the N by M matrix. In some implementations of the invention, the N by M by L trellis of the ELR QUID may be formed as a sensor trellis capable of sensing, measuring, and/or locating various fields in the volume of the N by M by L trellis. As will be appreciated, various other configurations of ELR QUIDs may be formed.

Due to their sensitivity, ELR QUID can be used to measure the susceptance of a material to non-destructively evaluate defects in metals for geophysical surveying, for microscopic magnetic observation, and for biological measurements. The improved performance characteristics of ELR materials used by the various embodied ELR QUIDs of the present invention are widely used in medical and psychological diagnostic and other applications where the sample being tested must be well maintained above cryogenic temperatures.

In some implementations, the QUID including the modified ELR material can be described as follows:

an ELR QUID, comprising: ELR loops including ELR materials and Josephson junctions having improved operating characteristics.

An ELR QUID, comprising: an ELR loop comprising an ELR material having a critical temperature above 150K and a barrier material, wherein in the ELR loop the ELR material and the barrier material form at least one josephson junction.

An ELR QUID, comprising: a plurality of ELR segments arranged to form an ELR loop, the ELR segments formed from an ELR material having a critical temperature greater than 150K; and a barrier disposed between two of the ELR segments to form a josephson junction in the ELR loop.

An ELR QUID, comprising: an ELR loop comprising a modified ELR material and a josephson junction, wherein the modified ELR material comprises a first layer of the ELR material and a second layer of the modified material bonded to the first layer of the ELR material, wherein the modified ELR material has an improved operating characteristic that exceeds the operating characteristic of the ELR material alone.

An ELR QUID, comprising: an ELR loop comprising a modified ELR material having a critical temperature above 150K and a barrier material, wherein in the ELR loop the ELR material and the barrier material form at least one josephson junction, wherein the modified ELR material comprises a first layer of the ELR material and a second layer of the modified material bonded to the first layer of the ELR material.

An ELR QUID, comprising: a plurality of ELR segments arranged to form an ELR loop, the ELR segments formed from a modified ELR material, wherein the modified ELR material comprises a first layer of the ELR material and a second layer of the modified material bonded to the first layer of the ELR material, wherein the modified ELR material has an improved operating characteristic that exceeds the operating characteristic of the ELR material alone; and a barrier disposed between two of the ELR segments to form a josephson junction in the ELR loop.

An asymmetric ELR QUID, comprising: an ELR loop comprising an ELR material and a josephson junction, wherein the ELR material has improved operating characteristics, wherein the ELR loop has a first leg and a second leg, wherein the first leg carries more current than the second leg.

A circuit, comprising: an ELR QUID comprising an ELR loop comprising a modified ELR material and a josephson junction; and an inductor coupled to the ELR QUID, wherein in the ELR loop of the ELR QUID, the alternating current flowing through the inductor induces a current.

A circuit, comprising: an ELR QUID comprising an ELR loop comprising a modified ELR material and a josephson junction, the ELR QUID having at least one feed for introducing current into the ELR loop; a source for providing current to the ELR QUID through a feed; and an input coil that senses the sensed current and induces an induced current in the ELR qid.

A magnetometer, comprising: an ELR QUID comprising an ELR loop comprising a modified ELR material and a josephson junction; an inductor; and a sensing loop coupled to the inductor, wherein a field flowing through the sensing loop provides a current to the inductor, and wherein in an ELR loop of the ELR QUID, a second current is induced through the current of the inductor.

A gradiometer comprising: an ELR QUID comprising an ELR loop comprising a modified ELR material and a josephson junction; and a sensing circuit comprising: the inductor includes an inductor, a first loop coupled to the inductor, and a second loop coupled to the first loop and the inductor, wherein the first loop is substantially the same size as the second loop, wherein the first loop is arranged parallel to and along a central axis of the second loop, and wherein the first loop is wound around the central axis in an opposite direction as the second loop, wherein the first loop and the second loop provide a current to the inductor, wherein the current corresponds to a difference between a field flowing through the first loop and a field flowing through the second loop, and wherein in the ELR loop of the ELR QUID, the current through the inductor induces a second current.

A gradiometer comprising: an ELR QUID comprising an ELR loop comprising a modified ELR material and a josephson junction; and a sensing circuit comprising: an inductor, a first loop coupled to the inductor, and a second loop coupled to the first loop, a third loop coupled to the second loop, a fourth loop coupled to the third loop and the inductor, wherein the first loop, the second loop, the third loop, and the fourth loop are substantially the same size, wherein the first loop, the second loop, the third loop, and the fourth loop are substantially parallel to each other, wherein the first loop, the second loop, the third loop, and the fourth loop share a concentric axis, wherein the first loop is wound around the concentric axis in a direction opposite to the second loop, wherein the third loop is wound around the concentric axis in a direction opposite to the fourth loop, wherein the first loop, the second loop, the third loop, and the fourth loop provide a current to the inductor, wherein the current corresponds to a difference between a first difference and a second difference, the first difference corresponds to a difference between a field flowing through the first loop and a field flowing through the second loop, and the second difference corresponds to a difference between a field flowing through the third loop and a field flowing through the fourth loop, and wherein in the ELR loop of the ELR QUID, a second current is induced through a current of the inductor.

A circuit, comprising: a plurality of ELR QUIDs coupled in series with each other, each of the plurality of ELR QUIDs comprising an ELR loop comprising a modified ELR material and a Josephson junction.

A circuit, comprising: a plurality of ELR QUIDs coupled in parallel with each other, each of the plurality of ELR QUIDs comprising an ELR loop comprising a modified ELR material and a Josephson junction.

A circuit, comprising: a plurality of series-connected ELR QUID arrays coupled in parallel with each other, each of the plurality of series-connected ELR QUID arrays comprising a plurality of ELR QUIDs coupled in series with each other, each of the plurality of ELR QUIDs comprising an ELR loop comprising a modified ELR material and a Josephson junction.

A circuit, comprising: a plurality of parallel ELR QUID arrays coupled in series with each other, each of the plurality of parallel ELR QUID arrays comprising a plurality of ELR QUIDs coupled in parallel with each other, each of the plurality of ELR QUIDs comprising an ELR loop comprising a modified ELR material and a Josephson junction.

A circuit, comprising: an ELR QUID matrix comprised of N rows and M columns of ELR QUIDs, each of the plurality of ELR QUIDs comprising an ELR loop comprising a modified ELR material and a Josephson junction.

A circuit, comprising: a plurality of arranged ELR QUID grids, the ELR QUIDs comprised of L matrices including N rows and M columns of ELR QUIDs spaced apart in each matrix, each of the plurality of ELR QUIDs including an ELR loop including a modified ELR material and a josephson junction, wherein the modified ELR material includes a first layer of the ELR material and a second layer of the modified material bonded to the first layer of the ELR material, wherein the modified ELR material has improved operating characteristics over the operating characteristics of the ELR material alone.

Thus, as described in chapters 1-18, various electronic, mechanical, computing, and/or other devices may employ and/or include components formed from modified ELR materials, such as the modified ELR materials described herein.

Unless the context clearly requires otherwise, throughout the description and the claims, the words "comprise", "comprising", and the like are to be construed in an inclusive sense as opposed to an exclusive or exhaustive sense; that is, what is meant is "including, but not limited to". As used herein, the terms "connected," "coupled," or any variant thereof, mean any connection or coupling, either direct or indirect, between two or more elements; the coupling of connections between elements may be physical, logical, or a combination thereof. In addition, the words "herein," "above," "below," and words of similar import, when used in this application, shall refer to this application as a whole and not to any particular portions of this application. Where the context permits, words in the above detailed description which use the singular or plural number also include the plural or singular number respectively. In reference to a list of two or more items, the word "or" covers all of the following interpretations of the word; any item in the list, all items in the list, and any combination of items in the list.

The above detailed description of an example of the system is not intended to be exhaustive or to limit the system to the precise form disclosed above. While specific embodiments of, and examples for, the system are described above for illustrative purposes, various equivalent modifications are possible within the scope of the system, as those skilled in the relevant art will recognize.

The teachings of the system provided herein are applicable to other systems, not necessarily the systems described above. The elements and acts of the various examples described above can be combined to provide further embodiments.

The above patents and applications, including any listed in the appended application documents, and other references are incorporated by reference in their entirety. Aspects of the system can be modified, if necessary, to employ the systems, functions, and concepts of the various references described above to provide yet further embodiments of the system.

These and other changes can be made to the system in light of the above detailed description. While the above description sets forth details of certain embodiments of the system and describes the best mode contemplated, no matter how specific the above appears in the text, the system can be practiced in many ways. The details of the local-based support system may vary considerably in its implementation details while still being encompassed by the system disclosed herein. As noted above, certain terminology is not employed when describing certain features or aspects of the system, thereby implying that the terminology is re-defined herein to be limited to any particular characteristic, feature, or aspect of the system with which it is associated. In general, the terms used in the following claims should not be construed to limit the system to the specific embodiments disclosed in the specification, unless the above detailed description section explicitly defines such terms. Accordingly, the actual scope of the system encompasses not only the disclosed embodiments, but also all equivalent ways of practicing or implementing the system under the claims.

While certain aspects of the technology are set forth below in certain claim forms, the present inventors contemplate the aspects of the technology in any claim form. Accordingly, the inventors should obtain this right to add additional claims after filing the application to continue such additional claim forms for other aspects of the system.

Claims

1. A josephson junction comprising:

a first very low resistance conductor comprising a modified very low resistance material;

a second extremely low resistance conductor comprising the modified extremely low resistance material; and

a blocking material disposed between the first very low resistance conductor and the second very low resistance conductor;

wherein the extremely low resistance is the resistance of the type II superconducting material semiconductor in its superconducting state; and the number of the first and second electrodes,

wherein the modified very low resistance material comprises a first layer of very low resistance material oriented in the a-axis and a second layer of modifying material bonded to the very low resistance material of the first layer, wherein the modified very low resistance material has improved operating characteristics over the operating characteristics of the very low resistance material alone.

2. The josephson junction of claim 1, wherein the blocking material comprises an insulating material.

3. The josephson junction of claim 1, wherein the blocking material comprises a conductive material.

4. The josephson junction of claim 3, wherein the blocking material comprises a conductive metal.

5. The josephson junction of claim 1, wherein the blocking material comprises a semiconductor material.

6. The josephson junction of claim 1, wherein the blocking material comprises a very low resistance material.

7. The josephson junction of claim 1, wherein the very low resistance material operates in a very low resistance state at temperatures greater than 150K.

8. The josephson junction of claim 1, wherein the blocking material is disposed between a first layer of very low resistance material of the first very low resistance conductor and a first layer of very low resistance material of the second very low resistance conductor.

9. The josephson junction of claim 8, wherein the blocking material is further disposed between the second layer of the modifying material of the first very low resistance conductor and the second layer of the modifying material of the second very low resistance conductor.

10. The josephson junction of claim 1, wherein the very low resistance material further comprises a substrate in contact with the first layer of very low resistance material.

11. The josephson junction of claim 1, wherein the modified very low resistance material comprises a metal and an oxide of the metal, the metal being selected from the group consisting of chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium, beryllium, gallium, or selenium.

12. A josephson junction comprising:

wherein the modified very low resistance material comprises a first layer of very low resistance material oriented in the a-axis and a second layer of modifying material bonded to the very low resistance material of the first layer, wherein the modified very low resistance material has a critical temperature greater than 150K.

13. The josephson junction of claim 12 wherein the blocking material comprises an insulating material.

14. The josephson junction of claim 12, wherein the blocking material comprises a conductive material.

15. The josephson junction of claim 14, wherein the blocking material comprises a conductive metal.

16. The josephson junction of claim 12, wherein the blocking material comprises a semiconductor material.

17. The josephson junction of claim 12 wherein the blocking material comprises a very low resistance material.

18. The josephson junction of claim 12, wherein the first and second very low resistance conductors each comprise a very low resistance wire formed of the very low resistance material.

19. The josephson junction of claim 12, wherein the first and second very low resistance conductors each comprise a very low resistance nanowire formed of the very low resistance material.

20. The josephson junction of claim 12, wherein the first and second very low resistance conductors each comprise a very low resistance trace formed of the very low resistance material.

21. The josephson junction of claim 12, wherein the modified very low resistance material comprises a metal and an oxide of the metal, the metal being selected from the group consisting of chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium, beryllium, gallium, or selenium.

22. A circuit, comprising:

a plurality of Josephson junctions, wherein each of the plurality of Josephson junctions comprises:

23. The circuit of claim 22, wherein the modified very low resistance material comprises a metal and an oxide of the metal, the metal selected from the group consisting of chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium, beryllium, gallium, or selenium.