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CN107146773B - Tft基板的制作方法 - Google Patents

Tft基板的制作方法 Download PDF

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Publication number
CN107146773B
CN107146773B CN201710340896.1A CN201710340896A CN107146773B CN 107146773 B CN107146773 B CN 107146773B CN 201710340896 A CN201710340896 A CN 201710340896A CN 107146773 B CN107146773 B CN 107146773B
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graphene
insulating layer
metal foil
tft substrate
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CN107146773A (zh
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夏慧
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to CN201710340896.1A priority Critical patent/CN107146773B/zh
Priority to KR1020197037105A priority patent/KR102190783B1/ko
Priority to US15/570,369 priority patent/US10153354B2/en
Priority to EP17909921.3A priority patent/EP3627543B1/en
Priority to PCT/CN2017/089247 priority patent/WO2018209751A1/zh
Priority to JP2019562541A priority patent/JP6857750B2/ja
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Abstract

本发明提供一种TFT基板的制作方法，首先在金属箔片上形成石墨烯半导体有源层，然后在石墨烯半导体有源层上依次形成无机物绝缘层和有机基底，通过上下翻转，使所述金属箔片位于最上层，再在所述金属箔片上经图案化工艺形成光阻层，对所述金属箔片进行蚀刻，得到源极和漏极，再然后在光阻层及石墨烯半导体有源层上依次形成有机绝缘层和栅极导电层，最后通过光阻剥离液去除光阻层并带离其上的有机绝缘层和栅极导电层，得到图形化的栅极绝缘层和栅极；该制作方法通过上下翻转的方式，将用于沉积石墨烯薄膜的金属箔片再次利用为制作源漏极的电极材料，从而达到降低成本和简化工艺的作用，并通过剥离工艺，只需一道光罩便可得到图形化源极、漏极和栅极。

Description

TFT基板的制作方法
技术领域
本发明涉及显示技术领域，尤其涉及一种TFT基板的制作方法。
背景技术
在有源矩阵显示技术中，每一个像素点都由集成在其后的薄膜晶体管(Thin FilmTransistor，TFT)进行驱动，从而可以实现高速度、高亮度、高对比度的屏幕显示效果。常见的TFT通常由栅极/源极/漏极(Gate/Source/Drain)三电极、绝缘层以及半导体层构成。
石墨烯，作为目前已知世界上最薄、最坚硬的纳米材料，因其具有良好的导电调控性，机械特性，导热特性，从而成为当前研究热点之一。石墨烯作为一种极薄导电率极高的新型材料，具有很大潜能被应用到电子元件/晶体管中。根据报道，石墨烯薄膜具有极低的方块电阻(<100Ω/□)，然而经过掺杂之后，又可以形成宽带系的二维绝缘材料，因而石墨烯经过一定处理后，可形成n型或p型半导体的特性，可被应用到显示行业的TFT器件中。然而目前对于大面积制备石墨烯，较常用且得到的石墨烯性能较好的技术主要为化学气相沉积法(Chemical Vapor Deposition，CVD)，利用该方法制作TFT器件的过程主要为，首先在金属基底如铜/镍上通过CVD法沉积石墨烯，再蚀刻掉金属基底得到石墨烯薄膜，再将该石墨烯薄膜通过卷对卷(Roll to Roll)或其他方式转移至已沉积所需薄膜的基底上，从而组装成TFT器件，该方法具有周期长，工艺复杂，且金属基底耗费大成本高的等缺点。
故，对于含石墨烯的TFT基板，开发一种工艺简单且成本低的制备方法具有重要意义。
发明内容
本发明的目的在于提供一种TFT基板的制作方法，能够降低生产成本、简化工艺、减少光罩制程。
为实现上述目的，本发明一种TFT基板的制作方法，包括以下步骤：
步骤S1、提供金属箔片，在所述金属箔片上沉积石墨烯薄膜，通过改变石墨烯带隙的方法得到石墨烯半导体有源层；
步骤S2、在所述石墨烯半导体有源层上沉积形成无机物绝缘层；
步骤S3、在所述无机物绝缘层上形成有机基底，得到初级结构；
步骤S4、将所述步骤S3得到的初级结构上下翻转，使有机基底位于最下层，使金属箔片位于最上层，在所述金属箔片上利用一道光罩经图案化工艺形成光阻层；
步骤S5、以所述光阻层为遮蔽层，对所述金属箔片进行蚀刻，得到间隔的源极和漏极；
步骤S6、在所述光阻层及石墨烯半导体有源层上形成有机绝缘层，在所述有机绝缘层上沉积形成栅极导电层；
步骤S7、通过光阻剥离液去除光阻层，同时通过光阻层带离光阻层上的有机绝缘层和栅极导电层，由剩余的有机绝缘层得到位于石墨烯半导体有源层上且位于源极与漏极之间的栅极绝缘层，由剩余的栅极导电层得到位于所述栅极绝缘层上的栅极。
所述金属箔片的材料为铜、或镍。
所述步骤S1中，所述改变石墨烯带隙的方法为化学掺杂法，具体为，在沉积石墨烯薄膜的同时对其进行化学掺杂，所沉积的石墨烯薄膜为掺杂的石墨烯薄膜，从而得到石墨烯半导体有源层；或者，
所述改变石墨烯带隙的方法为光刻法，具体为，在沉积石墨烯薄膜后，将石墨烯薄膜切割成细带状，成为石墨烯纳米带，从而得到石墨烯半导体有源层。
所述步骤S1中，通过等离子增强化学气相沉积法沉积所述石墨烯薄膜，所沉积的石墨烯薄膜为单层石墨烯薄膜；所述石墨烯半导体有源层的带隙值大于0.1eV。
所述步骤S2中，通过化学气相沉积法沉积形成无机物绝缘层，所述无机物绝缘层的材料为氮化硅、氧化硅、三氧化二钇、或二氧化铪。
所述步骤S3中，所述有机基底通过溶液涂布及固化形成，所述有机基底的材料为聚二甲基硅氧烷。
所述步骤S5中，通过湿蚀刻工艺对对所述金属箔片进行蚀刻。
所述步骤S6中，通过涂布工艺形成有机绝缘层，所述有机绝缘层的材料为聚甲基丙烯酸甲酯。
所述步骤S6中，通过物理气相沉积法沉积形成栅极导电层，所述栅极导电层的材料为铝、铜、或氧化铟锡。
所述的TFT基板的制作方法，还包括步骤S8、提供加强基底，使有机基底融化后再贴附到加强基底上；
所述加强基底为玻璃、聚对苯二甲酸乙二酯塑料、或硅片。
本发明的有益效果：本发明提供的一种TFT基板的制作方法，首先在金属箔片上沉积石墨烯薄膜，通过改变石墨烯带隙的方法得到石墨烯半导体有源层，然后在石墨烯半导体有源层上依次形成无机物绝缘层和有机基底，通过上下翻转，使所述金属箔片位于最上层，再在所述金属箔片上经图案化工艺形成光阻层，以所述光阻层为遮蔽层，对所述金属箔片进行蚀刻，得到源极和漏极，再然后在所述光阻层及石墨烯半导体有源层上依次形成有机绝缘层和栅极导电层，最后通过光阻剥离液去除光阻层，并通过光阻层带离其上的有机绝缘层和栅极导电层，从而得到图形化的栅极绝缘层和栅极；该制作方法通过上下翻转的方式，将用于沉积石墨烯薄膜的金属箔片再次利用为制作源漏极的电极材料，从而达到降低成本和简化工艺的作用，并通过剥离(lift-off)工艺，只需一道光罩便可得到图形化的源极、漏极和栅极。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为本发明TFT基板的制作方法的流程示意图；
图2为本发明TFT基板的制作方法步骤S1的示意图；
图3为本发明TFT基板的制作方法步骤S2的示意图；
图4为本发明TFT基板的制作方法步骤S3的示意图；
图5为本发明TFT基板的制作方法步骤S4的示意图；
图6为本发明TFT基板的制作方法步骤S5的示意图；
图7为本发明TFT基板的制作方法步骤S6的示意图；
图8为本发明TFT基板的制作方法步骤S7的示意图；
图9为本发明TFT基板的制作方法步骤S8的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明提供一种TFT基板的制作方法，包括以下步骤：
步骤S1、如图2所示，提供金属箔片100’，在所述金属箔片100’上沉积石墨烯薄膜，通过改变石墨烯带隙的方法得到石墨烯半导体有源层200。
具体地，本发明中，所述金属箔片100’的材料既可作为基底材料用于沉积制备石墨烯薄膜，同时也需具备导电性质后续可用作电极材料，例如铜(Cu)、或镍(Ni)等金属材料。
具体地，所述步骤S1中，所述改变石墨烯带隙的方法为化学掺杂法，具体为，在沉积石墨烯薄膜的同时对其进行化学掺杂，所沉积的石墨烯薄膜为掺杂的石墨烯薄膜，从而得到石墨烯半导体有源层200；或者，
所述改变石墨烯带隙的方法为光刻法，具体为，在沉积石墨烯薄膜后，将石墨烯薄膜切割成细带状，成为石墨烯纳米带(GNR)，从而得到石墨烯半导体有源层200。
具体地，所述步骤S1中，所形成的石墨烯半导体有源层200的带隙值大于0.1eV。
具体地，所述步骤S1中，通过等离子增强化学气相沉积法(Plasma EnhancedChemical Vapor Deposition，PECVD)沉积所述石墨烯薄膜，所沉积的石墨烯薄膜优选为单层石墨烯薄膜，其厚度优选为小于5nm。
步骤S2、如图3所示，在所述石墨烯半导体有源层200上沉积形成无机物绝缘层300，从而对石墨烯半导体有源层200起到一定的绝缘保护作用，阻止后续形成的有机基底对石墨烯半导体有源层200产生影响。
具体地，所述步骤S2中，通过化学气相沉积法(Chemical Vapor Deposition，CVD)沉积形成无机物绝缘层300，所述无机物绝缘层300的材料可以为氮化硅(SiNx)、氧化硅(SiO2)、三氧化二钇、二氧化铪(HfO2)等无机材料。
步骤S3、如图4所示，在所述无机物绝缘层300上形成有机基底400，得到初级结构。
具体地，所述步骤S3中，所述有机基底400通过溶液涂布及固化形成，所述有机基底400的材料可为聚二甲基硅氧烷(PDMS)。
步骤S4、如图5所示，将所述步骤S3得到的初级结构上下翻转，使有机基底400位于最下层，使金属箔片100’位于最上层，在所述金属箔片100’上利用一道光罩经图案化工艺形成光阻(PR)层500。
具体地，所述步骤S4中，所述图案化工艺具体包括依次进行的涂布步骤、曝光步骤、及显影步骤。
步骤S5、如图6所示，以所述光阻层500为遮蔽层，对所述金属箔片100’进行蚀刻，得到间隔的源极110和漏极120。
具体地，所述步骤S5中，通过湿蚀刻工艺对对所述金属箔片100’进行蚀刻。
步骤S6、如图7所示，在所述光阻层500及石墨烯半导体有源层200上形成有机绝缘层600’，在所述有机绝缘层600’上沉积形成栅极导电层700’。
具体地，所述步骤S6中，通过涂布工艺形成有机绝缘层600’，所述有机绝缘层600’可低温在所述光阻层500上形成，且所述有机绝缘层600’的介电系数需达到3倍真空介电常数，例如其材料可为聚甲基丙烯酸甲酯(PMMA)。
具体地，所述步骤S6中，通过物理气相沉积法(Physical Vapor Deposition，PVD)沉积形成栅极导电层700’，所述栅极导电层700’的材料为具备导电作用的金属或氧化物，例如铝(Al)、铜、氧化铟锡(ITO)等。
步骤S7、如图8所示，通过光阻剥离液去除光阻层500，同时通过光阻层500带离光阻层500上的有机绝缘层600’和栅极导电层700’，由剩余的有机绝缘层600’得到位于石墨烯半导体有源层200上且位于源极110及漏极120之间的栅极绝缘层600，由剩余的栅极导电层700’得到位于所述栅极绝缘层600上的栅极700。
本发明所得到TFT基板，所述有机基底400可以作为最外侧的基底，对TFT器件起到支撑作用，因此其材料需能够耐酸耐碱耐水，例如可选用PDMS或其他可用溶液涂布法制备的基底材料。另外，本发明的TFT基板的制作方法，还可包括步骤S8、如图9所示，提供加强基底800，使有机基底400融化后再贴附到加强基底800上。
具体地，所述加强基底800可以为玻璃、聚对苯二甲酸乙二酯(PET)塑料、硅片等。
上述TFT基板的制作方法，通过上下翻转的方式，将用于沉积石墨烯薄膜的金属箔片100’再次利用为制作源漏极110、120的电极材料，从而达到降低成本和简化工艺的作用，并通过剥离工艺，只需一道光罩便可得到图形化的源极110、漏极120和栅极700。
综上所述，本发明提供的一种TFT基板的制作方法，首先在金属箔片上沉积石墨烯薄膜，通过改变石墨烯带隙的方法得到石墨烯半导体有源层，然后在石墨烯半导体有源层上依次形成无机物绝缘层和有机基底，通过上下翻转，使所述金属箔片位于最上层，再在所述金属箔片上经图案化工艺形成光阻层，以所述光阻层为遮蔽层，对所述金属箔片进行蚀刻，得到源极和漏极，再然后在所述光阻层及石墨烯半导体有源层上依次形成有机绝缘层和栅极导电层，最后通过光阻剥离液去除光阻层，并通过光阻层带离其上的有机绝缘层和栅极导电层，从而得到图形化的栅极绝缘层和栅极；该制作方法通过上下翻转的方式，将用于沉积石墨烯薄膜的金属箔片再次利用为制作源漏极的电极材料，从而达到降低成本和简化工艺的作用，并通过剥离工艺，只需一道光罩便可得到图形化的源极、漏极和栅极。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (10)

1.一种TFT基板的制作方法，其特征在于，包括以下步骤：
步骤S1、提供金属箔片(100’)，在所述金属箔片(100’)上沉积石墨烯薄膜，通过改变石墨烯带隙的方法得到石墨烯半导体有源层(200)；
步骤S2、在所述石墨烯半导体有源层(200)上沉积形成无机物绝缘层(300)；
步骤S3、在所述无机物绝缘层(300)上形成有机基底(400)，得到初级结构；
步骤S4、将所述步骤S3得到的初级结构上下翻转，使有机基底(400)位于最下层，使金属箔片(100’)位于最上层，在所述金属箔片(100’)上利用一道光罩经图案化工艺形成光阻层(500)；
步骤S5、以所述光阻层(500)为遮蔽层，对所述金属箔片(100’)进行蚀刻，得到间隔的源极(110)和漏极(120)；
步骤S6、在所述光阻层(500)及石墨烯半导体有源层(200)上形成有机绝缘层(600’)，在所述有机绝缘层(600’)上沉积形成栅极导电层(700’)；
步骤S7、通过光阻剥离液去除光阻层(500)，同时通过光阻层(500)带离光阻层(500)上的有机绝缘层(600’)和栅极导电层(700’)，由剩余的有机绝缘层(600’)得到位于石墨烯半导体有源层(200)上且位于源极(110)和漏极(120)之间的栅极绝缘层(600)，由剩余的栅极导电层(700’)得到位于所述栅极绝缘层(600)上的栅极(700)。
2.如权利要求1所述的TFT基板的制作方法，其特征在于，所述金属箔片(100’)的材料为铜、或镍。
3.如权利要求1所述的TFT基板的制作方法，其特征在于，所述步骤S1中，所述改变石墨烯带隙的方法为化学掺杂法，具体为，在沉积石墨烯薄膜的同时对其进行化学掺杂，所沉积的石墨烯薄膜为掺杂的石墨烯薄膜，从而得到石墨烯半导体有源层(200)；或者，
所述改变石墨烯带隙的方法为光刻法，具体为，在沉积石墨烯薄膜后，将石墨烯薄膜切割成带状，成为石墨烯纳米带，从而得到石墨烯半导体有源层(200)。
4.如权利要求1所述的TFT基板的制作方法，其特征在于，所述步骤S1中，通过等离子增强化学气相沉积法沉积所述石墨烯薄膜，所沉积的石墨烯薄膜为单层石墨烯薄膜；所述石墨烯半导体有源层(200)的带隙值大于0.1eV。
5.如权利要求1所述的TFT基板的制作方法，其特征在于，所述步骤S2中，通过化学气相沉积法沉积形成无机物绝缘层(300)，所述无机物绝缘层(300)的材料为氮化硅、氧化硅、三氧化二钇、或二氧化铪。
6.如权利要求1所述的TFT基板的制作方法，其特征在于，所述步骤S3中，所述有机基底(400)通过溶液涂布及固化形成，所述有机基底(400)的材料为聚二甲基硅氧烷。
7.如权利要求1所述的TFT基板的制作方法，其特征在于，所述步骤S5中，通过湿蚀刻工艺对所述金属箔片(100’)进行蚀刻。
8.如权利要求1所述的TFT基板的制作方法，其特征在于，所述步骤S6中，通过涂布工艺形成有机绝缘层(600’)，所述有机绝缘层(600’)的材料为聚甲基丙烯酸甲酯。
9.如权利要求1所述的TFT基板的制作方法，其特征在于，所述步骤S6中，通过物理气相沉积法沉积形成栅极导电层(700’)，所述栅极导电层(700’)的材料为铝、铜、或氧化铟锡。
10.如权利要求1所述的TFT基板的制作方法，其特征在于，还包括步骤S8、提供加强基底(800)，使有机基底(400)融化后再贴附到加强基底(800)上；
所述加强基底(800)为玻璃、聚对苯二甲酸乙二酯塑料、或硅片。
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