CN106564852A - Packaging structure for high-impact MEMS inertial sensor chip - Google Patents
Packaging structure for high-impact MEMS inertial sensor chip Download PDFInfo
- Publication number
- CN106564852A CN106564852A CN201610911703.9A CN201610911703A CN106564852A CN 106564852 A CN106564852 A CN 106564852A CN 201610911703 A CN201610911703 A CN 201610911703A CN 106564852 A CN106564852 A CN 106564852A
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- China
- Prior art keywords
- inertial sensor
- sensor chip
- mems inertial
- metal
- tube shell
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/007—Interconnections between the MEMS and external electrical signals
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Pressure Sensors (AREA)
Abstract
The invention discloses a packaging structure for a high-impact MEMS inertial sensor chip. The packaging structure comprises a sealed metal tube shell and a metal cover plate, wherein an MEMS inertial sensor chip is attached to the inner side of the metal tube shell; a switch-over PCB plate is further attached to the inner side of the metal tube shell; the switch-over PCB plate is arranged on one sides of metal PADs of the MEMS inertial sensor chip; a group of metal bars are distributed on the panel of the switch-over PCB plate at intervals; the metal bars are one-to-one correspondingto the metal PADs of the MEMS inertia sensor chip; the metal PADs of the MEMS inertial sensor chip are respectively welded with one ends of corresponding metal strips via gold ball bonding; the other ends of the metal strips are respectively welded with leads wrapped up with insulation layers; the other ends of the leads extend out of the side wall of the metal tube shell; gold wires on the metal PADs of the MEMS inertial sensor chip can be introduced out of the metal tube shell via the metal strips and the leads via the switch-over PCB plate, so pins carried by the metal tube shell can be cancelled and impact-resisting capacity and reliability of the packaging structure can be enhanced.
Description
Technical field
The present invention relates to micro-electro-mechanical sensors technical field, specifically a kind of to be used for HI high impact MEMS inertial sensor chip
Encapsulating structure.
Background technology
MEMS（Micro-electromechanical Systems）Inertial sensor is because of its small volume, lightweight, power consumption
It is low, be subject to extensive concern both domestic and external the advantages of be easy to mass production, have broad application prospects in various fields.
Different from the MEMS inertial sensor being applied under normal impact environment, the MEMS being applied under HI high impact environment is used to
Property sensor it is high to the anti-HI high impact ability and reliability requirement of device, need tolerate ten tens of thousands of more than g HI high impact, therefore
The MEMS inertial sensor being used under HI high impact environment in actual applications would generally cause sensing due to anti-HI high impact ability
The sensitive structure of device or encapsulating structure are damaged, so as to cause component failure.
In order to ensure the MEMS inertial sensor normal work being applied under HI high impact environment, its encapsulating structure just seems outstanding
For important.The problems such as anti-HI high impact ability of encapsulating structure generally existing of existing MEMS inertial sensor, device reliability difference,
The problems such as usually there is the glass insulator fragmentation that Can carries pin, wire breaking, therefore, in the urgent need to a kind of microcomputer
Electric transducer encapsulating structure is ensureing the reliability that MEMS inertial sensor works under HI high impact environment.
The content of the invention
The present invention is to solve the anti-HI high impact ability of existing MEMS inertial sensor encapsulating structure, encapsulating structure reliability
Property difference problem, there is provided a kind of encapsulating structure for HI high impact MEMS inertial sensor chip.
The technical solution adopted for the present invention to solve the technical problems is：
A kind of encapsulating structure for HI high impact MEMS inertial sensor chip, including the Can and metal cover board of sealing,
MEMS inertial sensor die bonding is also bonded with switching pcb board in Can in Can, switching pcb board is located at
The metal PAD sides of MEMS inertial sensor chip, the plate face of pcb board of transferring is intervally distributed with one group of bonding jumper, bonding jumper with
The metal PAD of MEMS inertial sensor chip is corresponded；The metal PAD of MEMS inertial sensor chip respectively with corresponding gold
One end of category bar is mutually welded by gold ball bonding, and the other end of bonding jumper is respectively welded the wire with parcel insulating barrier, wire
The other end extends metal tube shell side wall.
Further, thickness of the thickness of the switching pcb board less than MEMS inertial sensor chip.
The invention has the beneficial effects as follows, by the spun gold transferred on metal PAD of the pcb board by MEMS inertial sensor chip
The outside of Can is drawn out to by bonding jumper and wire, eliminate Can carries pin, is not in spun gold and gold
Category pin pressure welding point come off, the glass insulator fragmentation of Can pin the problems such as, enhance the anti-HI high impact of encapsulating structure
Ability and reliability.
Description of the drawings
With reference to the accompanying drawings and examples the present invention is further described：
Fig. 1 is the structural representation of the present invention；
Fig. 2 is the top view of the present invention, and metal cover board is not drawn into filling glue.
Specific embodiment
With reference to shown in Fig. 1 and Fig. 2, the present invention provides a kind of encapsulation for HI high impact MEMS inertial sensor chip and ties
Structure, including the Can 1 of sealing and metal cover board 10, MEMS inertial sensor chip 3 is adhered to metal tube by bonded adhesives 2
In shell 1, switching pcb board 4 is also bonded with Can 1, pcb board 4 of transferring is located at the metal of MEMS inertial sensor chip 3
PAD5 sides, the plate face of pcb board 4 of transferring is intervally distributed with one group of bonding jumper 6, bonding jumper 6 and MEMS inertial sensor chip
Metal PAD5 is corresponded, and insulating barrier 7 is equipped with every bonding jumper 6, and bonding jumper 6 can be turned with insulating barrier 7 by turmeric, figure
The techniques such as shifting, plating make；Thickness of the thickness of the switching pcb board 4 less than MEMS inertial sensor chip 3；MEMS inertia
The metal PAD5 of sensor chip is mutually welded respectively with one end of corresponding bonding jumper 6 by gold ball bonding, the connection of the one end of spun gold 8
Metal PAD5, other end connection bonding jumper 6；The other end of bonding jumper 6 is respectively welded the wire 9 with parcel insulating barrier, wire 9
The other end extends the side wall of Can 1；Filled with filling glue 11 between Can 1 and metal cover board 10.
The thickness of switching pcb board 4 can reduce arch during gold wire bonding less than the thickness of MEMS inertial sensor chip 3
Silk height, improves reliability；All bonding jumpers on switching pcb board 4 all using gold making, so can be reduced and bonding wire
Contact resistance.
When carrying out bonding with switching pcb board 4 to MEMS inertial sensor chip 3, the consumption of bonded adhesives 2 should control to fit
When, it is ensured that do not spill over the bottom of MEMS inertial sensor chip 3 and switching pcb board 4.
, preferably using the metal material that density is less, specific modulus is larger, its internal stress is less, so for Can 1
The stress that Can inside other materials is experienced is also less, plays and sensitive structure inside shell is protected under HI high impact environment
Effect.
The filling glue that described the filling preferred elastic modelling quantity of glue 11 is larger, thermal coefficient of expansion and spun gold are close, can resist gold
The effect of category shell vibration deformation so that the structure after encapsulation is more firm, is conducive to the lifting of anti-HI high impact ability.
The above, is only presently preferred embodiments of the present invention, and any pro forma restriction is not made to the present invention；Appoint
What those of ordinary skill in the art, under without departing from technical solution of the present invention ambit, all using the side of the disclosure above
Method and technology contents make many possible variations and modification, or the equivalent reality for being revised as equivalent variations to technical solution of the present invention
Apply example.Therefore, every content without departing from technical solution of the present invention, is done according to the technical spirit of the present invention to above example
Any simple modification, equivalent, equivalence changes and modification, still fall within the range of technical solution of the present invention protection.
Claims (2)
1. a kind of Can and crown cap of encapsulating structure for HI high impact MEMS inertial sensor chip, including sealing
Plate, MEMS inertial sensor die bonding is in Can, it is characterised in that be also bonded with switching pcb board in Can,
Switching pcb board be located at MEMS inertial sensor chip metal PAD sides, transfer pcb board plate face be intervally distributed with one group it is golden
Category bar, bonding jumper is corresponded with the metal PAD of MEMS inertial sensor chip；The metal PAD of MEMS inertial sensor chip
Mutually welded by gold ball bonding with one end of corresponding bonding jumper respectively, the other end of bonding jumper is respectively welded band parcel insulating barrier
Wire, the other end of wire extends metal tube shell side wall.
2. a kind of encapsulating structure for HI high impact MEMS inertial sensor chip according to claim 1, its feature exists
In the thickness of the switching pcb board is less than the thickness of MEMS inertial sensor chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610911703.9A CN106564852A (en) | 2016-10-20 | 2016-10-20 | Packaging structure for high-impact MEMS inertial sensor chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610911703.9A CN106564852A (en) | 2016-10-20 | 2016-10-20 | Packaging structure for high-impact MEMS inertial sensor chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106564852A true CN106564852A (en) | 2017-04-19 |
Family
ID=58533229
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610911703.9A Pending CN106564852A (en) | 2016-10-20 | 2016-10-20 | Packaging structure for high-impact MEMS inertial sensor chip |
Country Status (1)
| Country | Link |
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| CN (1) | CN106564852A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107768323A (en) * | 2017-11-24 | 2018-03-06 | 安徽北方芯动联科微系统技术有限公司 | Anti high overload electron device package shell |
| CN109292727A (en) * | 2018-11-13 | 2019-02-01 | 北方电子研究院安徽有限公司 | A kind of two-piece type MEMS gyroscope with temperature compensation function |
| CN111422818A (en) * | 2020-03-30 | 2020-07-17 | 歌尔微电子有限公司 | Sensor packaging structure and packaging method |
| CN113443601A (en) * | 2021-07-16 | 2021-09-28 | 湖南天羿领航科技有限公司 | MEMS inertial sensor chip module and preparation method thereof |
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| US20040207096A1 (en) * | 2000-11-20 | 2004-10-21 | Lamson Michael A. | Low capacitance coupling wire bonded semiconductor device |
| CN102259827A (en) * | 2011-06-25 | 2011-11-30 | 中北大学 | Method for encapsulating MEMS (micro electro mechanical system) high-range acceleration sensor |
| KR20130028243A (en) * | 2011-09-09 | 2013-03-19 | 앰코 테크놀로지 코리아 주식회사 | Semicounductor package having micro electronic mechnical system |
| CN203754411U (en) * | 2014-01-27 | 2014-08-06 | 中国电子科技集团公司第四十三研究所 | Dual-cavity MEMS (micro-electromechanical system) hybrid integrated metal packaging structure |
| CN104390637A (en) * | 2014-11-18 | 2015-03-04 | 中国兵器工业集团第二一四研究所苏州研发中心 | Small-sized anti-high-overload digital micro-electro-mechanical system (MEMS) gyroscope sensor |
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2016
- 2016-10-20 CN CN201610911703.9A patent/CN106564852A/en active Pending
Patent Citations (5)
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| US20040207096A1 (en) * | 2000-11-20 | 2004-10-21 | Lamson Michael A. | Low capacitance coupling wire bonded semiconductor device |
| CN102259827A (en) * | 2011-06-25 | 2011-11-30 | 中北大学 | Method for encapsulating MEMS (micro electro mechanical system) high-range acceleration sensor |
| KR20130028243A (en) * | 2011-09-09 | 2013-03-19 | 앰코 테크놀로지 코리아 주식회사 | Semicounductor package having micro electronic mechnical system |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107768323A (en) * | 2017-11-24 | 2018-03-06 | 安徽北方芯动联科微系统技术有限公司 | Anti high overload electron device package shell |
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| CN109292727A (en) * | 2018-11-13 | 2019-02-01 | 北方电子研究院安徽有限公司 | A kind of two-piece type MEMS gyroscope with temperature compensation function |
| CN111422818A (en) * | 2020-03-30 | 2020-07-17 | 歌尔微电子有限公司 | Sensor packaging structure and packaging method |
| CN111422818B (en) * | 2020-03-30 | 2024-01-23 | 歌尔微电子股份有限公司 | Sensor packaging structure and packaging method |
| CN113443601A (en) * | 2021-07-16 | 2021-09-28 | 湖南天羿领航科技有限公司 | MEMS inertial sensor chip module and preparation method thereof |
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Application publication date: 20170419 |