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CN106526992A - 一种coa基板及液晶面板 - Google Patents

一种coa基板及液晶面板 Download PDF

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CN106526992A
CN106526992A CN201611263251.4A CN201611263251A CN106526992A CN 106526992 A CN106526992 A CN 106526992A CN 201611263251 A CN201611263251 A CN 201611263251A CN 106526992 A CN106526992 A CN 106526992A
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passivation layer
public electrode
layer
rgb color
insulating barrier
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陈帅
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to CN201611263251.4A priority Critical patent/CN106526992A/zh
Priority to PCT/CN2017/071338 priority patent/WO2018120331A1/zh
Priority to US15/328,480 priority patent/US10366660B2/en
Publication of CN106526992A publication Critical patent/CN106526992A/zh
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    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
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    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
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    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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Abstract

本发明提供了一种COA基板，包括玻璃基板、公共电极、覆盖在公共电极上的绝缘层、设于绝缘层上并且与公共电极交错设置的数据线，依次设于数据线上的第一钝化层、RGB色阻层、第二钝化层，所述公共电极上与数据线交错处设有断开的缺口，使公共电极形成两个相对的端部，绝缘层填充缺口，在第二钝化层上设有用于跨接公共电极的两个端部的导电层。本发明还提供了一种液晶面板，包括所述的COA基板。本发明与现有技术相比，通过将加大公共电极与数据线的间距，从而降低在数据线与公共电极之间所产生的寄生电容的大小，以此减小数据线对公共电极的电容耦合作用，改善串扰现象。

Description

一种COA基板及液晶面板
技术领域
本发明涉及薄膜晶体管-液晶显示器领域，特别涉及一种用于改善4MASK水平串扰的共电极结构的COA基板及液晶面板。
背景技术
串扰是TFT-LCD显示不良中比较常见的一种现象，是指某一区域的画面会影响到其他区域的画面。TFT-LCD根据串扰的位置不同可以分为垂直串扰及水平串扰。以VA显示模式为例，判断串扰的画面，若出现不良现象为水平向则为水平串扰。导致不同类型串扰的原因有所不同，在这里，我们只探讨水平串扰的不良现象，通常情况下，驱动方式的不同将会导致不同宏观表现的水平串扰，例如帧反转可能会出现线状水平串扰，而列反转和点反转的水平串扰现象就会很轻微。但是，无论哪种驱动方式，产生这种画面不良的真因都是一致的，源于数据线(Data)和公共电极的电容耦合作用。当数据线电位发生变化时，便会经由数据线与公共电极之间的寄生电容CDC在公共电极形成一个瞬间的电位跳变。若公共电极的信号延迟较为严重或电压驱动能力不足，则电位无法很快恢复到预设定电位，这个电位跳变会通过储存电容Cst的耦合作用拉低像素跨压，导致像素亮度降低从而形成水平串扰。以VA显示模式、Row Inversion(行反转)的驱动方式为例。Data A的驱动电压始终为128灰阶电位，Data B的驱动电压有2/3的时间为128灰阶电位、1/3的时间为255灰阶电位，Data A和Data B的电位周期性反转，导致公共电极的电位也发生相应的变化，公共电极电位变化导致的结果是画面整体偏暗，而255灰阶电位的横向区域则会由于公共电极电位变化更大而出现颜色更暗的水平区块。通常情况下，水平串扰的解决方案是采用Column Inversion(纵向翻转的方式)或者Dot Inversion(点反转)的驱动方式，但是这种解决方案容易受到制程变化带来的影响，使得左右两条数据线对公共电极的电容耦合作用相反而相互抵消，并以此减轻串扰现象。
在4MASk下，数据线和公共电极之间的电容CDC结构中存在着AS层(烷基硅烷)和N+层，导致了在正帧和负帧驱动下CDC的大小存在差异，可以分别表示为CDC+和CDC-，这样的变化使得左右两条数据线对公共电极的电容耦合作用存在较大差异，因而4MASK的串扰现象相比5MASK要更加严重。
发明内容
为克服现有技术的不足，本发明提供一种COA基板及液晶面板，从而改善串扰现象。
本发明提供了一种COA基板，包括玻璃基板、公共电极、覆盖在公共电极上的绝缘层、设于绝缘层上并且与公共电极交错设置的数据线，依次设于数据线上的第一钝化层、RGB色阻层、第二钝化层，所述公共电极上与数据线交错处设有断开的缺口，使公共电极形成两个相对的端部，绝缘层填充缺口，在第二钝化层上设有用于跨接公共电极的两个端部的导电层。
进一步地，所述导电层通过过孔与公共电极的两个端部连接。
进一步地，所述绝缘层上位于公共电极的两个端部处分别设有绝缘层过孔，第一钝化层上位于绝缘层过孔处设有第一钝化层过孔，RGB色阻层上位于第一钝化层过孔处设有RGB色阻层过孔，在第二钝化层上位于RGB色阻层过孔处设有第二钝化层过孔，所述第二钝化层过孔、RGB色阻层过孔、第一钝化层过孔以及绝缘层过孔依次连通形成过孔。
进一步地，所述金属层为透明导电膜。
进一步地，所述第一钝化层、RGB色阻层、第二钝化层均为um级别。
进一步地，所述过孔的轴线方向与公共电极的上端面垂直设置。
进一步地，所述过孔为漏斗状结构。
进一步地，所述过孔的上端孔口的孔径小于公共电极的宽度。
本发明还提供了一种液晶面板，包括所述的COA基板。
本发明与现有技术相比，通过将加大公共电极与数据线的间距，从而降低在数据线与公共电极之间所产生的寄生电容的大小，以此减小数据线对公共电极的电容耦合作用，改善串扰现象。
附图说明
图1是本发明COA基板中像素结构的投影图。
图2是图1中标示A处的剖视图。
具体实施方式
下面结合附图和实施例对本发明作进一步详细说明。
本发明中COA(Color Filter on Array)基板为现有技术中通过4mask工艺制成，其改进部分仅为附图1和图2中数据线与公共电极交错部分的共电极结构，因此一下仅针对改进的部分进行描述。
如图1和图2所示，本发明的一种COA基板，包括玻璃基板1、设于玻璃基板1上的公共电极2、覆盖在公共电极2上的绝缘层3、设于绝缘层3上并且与公共电极2交错设置的数据线4，COA基板还包括依次设于数据线4上的第一钝化层5、RGB色阻层6、第二钝化层7，所述公共电极2上与数据线4交错处设有断开的缺口14，使公共电极2形成两个相对的端部，绝缘层3填充缺口14，在第二钝化层7上设有用于跨接公共电极2的两个端部的导电层8。
本发明中利用导电层8将断开的公共电极2搭接在一起，此时，公共电极2与数据线形成的电容结构为数据线\第一钝化层5\RGB色阻层6\第二钝化层7\导电层8，在两平行板电容之间夹着的绝缘部分包含第一钝化层5\RGB色阻层6\第二钝化层7三层，其膜层厚度为um量级。根据电容公式C＝εS/4πkd可知，两金属极板之间的间距越大电容值越小，因此，可以有效降低电容的大小。
具体地，本发明中导电层8通过过孔13与公共电极2的两个端部连接。
所述过孔13由绝缘层3上位于公共电极2的两个端部处分别设有绝缘层过孔9、第一钝化层5上位于绝缘层过孔9处设有第一钝化层过孔10、RGB色阻层6上位于第一钝化层过孔10处设有RGB色阻层过孔11、在第二钝化层7上位于RGB色阻层过孔11处设有第二钝化层过孔12，并且依次连通形成。
过孔13的轴线方向与公共电极2的上端面垂直设置；过孔13为漏斗状结构；所述过孔13的上端孔口的孔径小于公共电极2的宽度。
本发明中金属层8为透明导电膜(ITO)。
本发明还公开了一种液晶面板，包括上述的COA基板，在此不再赘述。
虽然已经参照特定实施例示出并描述了本发明，但是本领域的技术人员将理解：在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下，可在此进行形式和细节上的各种变化。

Claims (9)

1.一种COA基板，其特征在于：包括玻璃基板(1)、公共电极(2)、覆盖在公共电极(2)上的绝缘层(3)、设于绝缘层(3)上并且与公共电极(2)交错设置的数据线(4)，依次设于数据线(4)上的第一钝化层(5)、RGB色阻层(6)、第二钝化层(7)，所述公共电极(2)上与数据线(4)交错处设有断开的缺口(14)，使公共电极(2)形成两个相对的端部，绝缘层(3)填充缺口(14)，在第二钝化层(7)上设有用于跨接公共电极(2)的两个端部的导电层(8)。
2.根据权利要求1所述的COA基板，其特征在于：所述导电层(8)通过过孔(13)与公共电极(2)的两个端部连接。
3.根据权利要求2所述的COA基板，其特征在于：所述绝缘层3上位于公共电极(2)的两个端部处分别设有绝缘层过孔(9)，第一钝化层(5)上位于绝缘层过孔(9)处设有第一钝化层过孔(10)，RGB色阻层(6)上位于第一钝化层过孔(10)处设有RGB色阻层过孔(11)，在第二钝化层(7)上位于RGB色阻层过孔(11)处设有第二钝化层过孔(12)，所述第二钝化层过孔(12)、RGB色阻层过孔(11)、第一钝化层过孔(10)以及绝缘层过孔(9)依次连通形成过孔(13)。
4.根据权利要求3所述的COA基板，其特征在于：所述金属层(8)为透明导电膜。
5.根据权利要求4所述的COA基板，其特征在于：所述第一钝化层(5)、RGB色阻层(6)、第二钝化层(7)均为um级别。
6.根据权利要求2所述的COA基板，其特征在于：所述过孔(13)的轴线方向与公共电极(2)的上端面垂直设置。
7.根据权利要求6所述的COA基板，其特征在于：所述过孔(13)为漏斗状结构。
8.根据权利要求7所述的COA基板，其特征在于：所述过孔(13)的上端孔口的孔径小于公共电极(2)的宽度。
9.一种液晶面板，其特征在于:包括权利要求1-8任一项所述的COA基板。
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