CN106133610B - Substrate board treatment, device making method and substrate processing method using same - Google Patents
Substrate board treatment, device making method and substrate processing method using same Download PDFInfo
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- CN106133610B CN106133610B CN201580017855.8A CN201580017855A CN106133610B CN 106133610 B CN106133610 B CN 106133610B CN 201580017855 A CN201580017855 A CN 201580017855A CN 106133610 B CN106133610 B CN 106133610B
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/24—Curved surfaces
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706843—Metrology apparatus
- G03F7/706845—Calibration, e.g. tool-to-tool calibration, beam alignment, spot position or focus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7065—Production of alignment light, e.g. light source, control of coherence, polarization, pulse length, wavelength
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Substrate board treatment is configured with multiple delineation units in a manner of causing pattern that each description line by multiple delineation units is depicted on substrate to be bonded together each other along with movement of the substrate to length direction on the width of substrate along the width of substrate.Control unit is previously stored with the relevant calibration information of mutual position relationship of the description line with being formed respectively on substrate by multiple delineation units, and adjusts the description position of the pattern by the respective formation on substrate of describing light beam of multiple delineation units based on the calibration information and from the mobile message of traverse measuring device output.
Description
Technical field
The present invention relates to the substrate board treatment of the tectosome for forming fine electronic device on substrate, device manufacture
Method and substrate processing method using same.
Background technology
In the past, as substrate board treatment, it is known to the system that the assigned position in sheet medium (substrate) is described
Make device (for example, referring to patent document 1).Manufacture device described in patent document 1 passes through to easily stretching in the direction of the width
Flexible strip plate shape substrates detection alignment mark to measure the flexible of plate shape substrates, and describe position according to stretching to correct
(Working position).
Prior art literature
Patent document
Patent document 1:Japanese Unexamined Patent Publication 2010-91990 publications
The content of the invention
In the manufacture device of patent document 1, substrate is transported by an edge conveyance direction while switching spatial modulation element
(DMD：Digital Micro mirror Device) be exposed, using multiple delineation units on substrate depicting pattern.
In the manufacture device of patent document 1, using multiple delineation units so that pattern adjacent on the width of substrate connects each other
The mode of conjunction is exposed, but in order to suppress the error of engagement exposure, the engagement to carrying out test exposure and development and generating
The measurement result of the site error of pattern at portion is fed back.However, such make comprising test exposure, development, measurement etc.
Although the feedback procedure including industry is also different because of its frequency, production line can be caused to stop temporarily, it is possible to reduce product life
Yield and substrate is caused to waste.
The solution of the present invention be in view of above-mentioned problem and complete, its object is to, there is provided a kind of substrate board treatment, device
Part manufacture method and substrate processing method using same, though using multiple delineation units on the width of substrate with the shape of bond pattern
In the case that formula is exposed (description), the mutual bonding error of pattern can be also reduced, high accuracy and stably on substrate
Depict the pattern of large area.
According to the 1st scheme of the present invention, there is provided a kind of substrate board treatment, have：Carrying device, its one side by with
A part for the substrate of length direction supporting strip sheet of the supporting member of the bearing-surface of bending along substrate, while making institute
Substrate is stated to move along the length direction；And drawing apparatus, it has multiple delineation units, and the plurality of delineation unit is to by described
Support and project modulated description light beam on the substrate of surface bearing, while in the substrate intersected with the length direction
Width on be scanned with the small scope of the width than the substrate, and painted along the description line drawing obtained by the scanning
Go out defined pattern, width configuration of the multiple delineation unit in the drawing apparatus along the substrate, to cause
The pattern depicted on the substrate by each description line of the plurality of delineation unit is each other along with the substrate to length
The movement in direction and be bonded together on the width of the substrate；Traverse measuring device, it is exported with being removed based on described
Send the amount of movement of the substrate of device or the mobile message that shift position is corresponding；And control unit, its be previously stored with
The relevant calibration information of mutual position relationship for describing line, and filled based on the calibration information and from the traverse measurement
The mobile message of output is put to adjust by the respective description light beam of the multiple delineation unit and shape on the substrate
Into pattern description position, wherein, it is described description line be to be respectively formed at by the multiple delineation unit on the substrate.
According to the present invention the 2nd scheme, there is provided a kind of device making method, using the present invention the 1st scheme substrate at
Device is managed to form the pattern on the substrate.
According to the 3rd scheme of the present invention, it is a kind of substrate processing method using same, electronics device is depicted on the plate shape substrates of strip
The pattern of part, including following processing：The plate shape substrates are conveyed with fixing speed along the length direction of the plate shape substrates；Make from
The light beam for the ultraviolet band that light-pulse generator device is gone out with frequency Fz impulse huntings the plate shape substrates surface aggregation into a light,
And the light beam is moved by optical scanner, thus makes described light along on the width intersected with length direction
The length LBL of extension description line is scanned；And during the scanning of described light, retouched based on corresponding with the pattern
Data are painted to be modulated to the intensity of described light, by the point light that the optically focused of 1 pulse of the light beam is formed with it is next
Be set to CXs along the interval of the description line between the point light that the optically focused of pulse is formed, by described light along the description line
Virtual size when being set to Xs, described optical scanning being gone out to sweep time of the length LBL be set to Ts, be set to meet with
Lower relation：Xs ＞ CXs, also, Fz ＞ LBL/ (TsXs).
According to the 4th scheme of the present invention, it is a kind of substrate processing method using same, electronics device is depicted on the plate shape substrates of strip
The pattern of part, including following process：The work of the plate shape substrates is conveyed with fixing speed along the length direction of the plate shape substrates
Sequence；Make the light beam of ultraviolet band that goes out from light-pulse generator device with frequency Fz impulse huntings in the surface aggregation of the plate shape substrates
Into a light, and the description for making described light extend along on the width intersected in the length direction with the plate shape substrates
The process that line is scanned；And during the scanning of described light, based on the pattern is split into what is obtained by pixel unit
Describe data, the process being modulated by light switching device to the intensity of the light beam, by the modulation of the smooth switching device
When response frequency Fss and the frequency Fz of impulse hunting of the light beam be set to Fz ＞ Fss relation.
Invention effect
According to the solution of the present invention, using the teaching of the invention it is possible to provide following substrate board treatment, device making method, use can be reduced
Bonding error of multiple delineation units when carrying out engagement exposure on the width of substrate to pattern, and substrate can be closed
The description based on multiple delineation units is carried out suitablely.It can also enough provide makes 1 delineation unit along description line depicting pattern
When the substrate processing method using same that is improved of description precision (uniformity of light exposure etc.) and fidelity.
Brief description of the drawings
Fig. 1 is the integrally-built figure for the exposure device (substrate board treatment) for representing the 1st embodiment.
Fig. 2 is the stereogram of the configuration of the major part for the exposure device for representing Fig. 1.
Fig. 3 is the figure of configuration relation of the aligming microscope with describing line on substrate.
Fig. 4 be the exposure device for representing Fig. 1 rotating cylinder and drawing apparatus structure figure.
Fig. 5 is the top view of the configuration of the major part for the exposure device for representing Fig. 1.
Fig. 6 is the stereogram of the structure of the branch's optical system for the exposure device for representing Fig. 1.
Fig. 7 is the figure of the configuration relation of the multiple scanners for the exposure device for representing Fig. 1.
Fig. 8 is the optical texture described line and misplaced for the inclination institute lead that explanation is used to eliminate the reflecting surface because of scanner
Figure.
Fig. 9 is to represent aligming microscope on substrate, describe the solid of configuration relation between line and encoder head
Figure.
Figure 10 is the stereogram of the surface structure of the rotating cylinder for the exposure device for representing Fig. 1.
Figure 11 is to represent the explanation figure for describing line and the position relationship of depicting pattern on substrate.
Figure 12 is the explanation figure for representing relation of the light beam spot with describing line.
Figure 13 is that the intensity distribution variation caused by the lap of the light beam spot of 2 pulsed quantities as being obtained on substrate is entered
The chart that row simulation obtains.
Figure 14 is the flow chart on the method for adjustment of the exposure device of the 1st embodiment.
Figure 15 is the reference pattern and the explanation figure of the relation of description line for schematically showing rotating cylinder.
Figure 16 is the photoelectric sensing for being shown schematically in the reflected light that bright-field receives the reference pattern from rotating cylinder
The explanation figure of the signal of device output.
Figure 17 is the photoelectric sensing for being shown schematically in the reflected light that dark field receives the reference pattern from rotating cylinder
The explanation figure of device.
Figure 18 is to schematically show the photoelectric transfer from the reflected light that the reference pattern from rotating cylinder is received in dark field
The explanation figure of the signal of sensor output.
Figure 19 is the explanation figure for the mutual position relationship of reference pattern for schematically showing rotating cylinder.
Figure 20 is the explanation figure for the relative position relation for schematically showing a plurality of description line.
Figure 21 is description line contained in the displacement and displacement for schematically show substrate time per unit
The explanation figure of relation between bar number.
Figure 22 is the explanation figure for schematically illustrating the pulsed light synchronous with the system clock of light-pulse generator.
Figure 23 is the block diagram of one that explanation is used to generate the circuit structure of the system clock of light-pulse generator.
Figure 24 is the timing diagram of the signal migration of each several part in the circuit structure for represent Figure 23.
Figure 25 is the flow chart for representing each device making method.
Embodiment
On the mode (embodiment) for implementing the present invention, it is explained in detail with reference to the accompanying drawings.Do not pass through following embodiment party
The content that formula is recorded limits the present invention.In addition, be readily apparent that in the structural element recorded below comprising those skilled in the art,
And substantially the same key element.Moreover, the structural element recorded below can be appropriately combined.In addition, master of the present invention is not being departed from
Various omissions, displacement or the change that structural element can be carried out in the range of purport.
[the 1st embodiment]
Fig. 1 is the integrally-built figure for the exposure device (substrate board treatment) for representing the 1st embodiment.1st embodiment party
The substrate board treatment of formula is the exposure device EX for implementing exposure-processed to substrate P, and exposure device EX is assembled in after exposure
Substrate P implements various processing to manufacture in the device inspection apparatus 1 of device.First, device inspection apparatus 1 is illustrated.
＜ device inspection apparatus ＞
Device inspection apparatus 1 is production line (flexible display production line) of the manufacture as the flexible display of device.Make
For flexible display, such as there is organic el display etc..The device inspection apparatus 1 is so-called volume to volume (Roll to Roll)
Mode, i.e., the substrate P is sent out with roller from the supply (not shown) that the strip substrate P of flexible (flexible) is wound into roll,
And various processing are continuously implemented to the substrate P of submitting, then it is wound up into using the substrate P after processing as flexible devices not shown
Recovery roller on.In the device inspection apparatus 1 of the 1st embodiment, show substrate P as film-form sheet material by from confession
Sent out to roller, and the substrate P sent out from supply with roller is straight by processing unit U1, exposure device EX, processing unit U2 successively
Example untill recovery roller is wound in.Here, the substrate P of the process object as device inspection apparatus 1 is said
It is bright.
Substrate P is such as paper tinsel (foil) formed using resin film, the metal or alloy as stainless steel etc..It is thin as resin
The material of film, for example, containing one or both of following resin more than, i.e. polyvinyl resin, acrylic resin, polyester tree
Fat, Ethylene Vinyl Ester Copolymers resin, Corvic, celluosic resin, polyamide, polyimide resin, poly- carbon
Acid ester resin, polystyrene resin, vinyl acetate resin.
Preferably, thermal coefficient of expansion not significantly big substrate is selected substrate P, for example can substantially ignore
Deflection caused by because heated in the various processing implemented to substrate P.Thermal coefficient of expansion for example can be by thin in resin
It is smaller than threshold value corresponding with technological temperature etc. to be set as that inorganic filler is mixed in film.Inorganic filler can be such as titanium oxide,
Zinc oxide, aluminum oxide, silica etc..In addition, the pole that it is 100 μm or so using the thickness of the manufactures such as floating preparation method that substrate P, which can be,
The individual layers of thin glass or the layered product that above-mentioned resin film, paper tinsel etc. form is bonded on the very thin glass.
The substrate P so formed is wound into roll into roller, the supply manufacture system with roller installed in device for the supply
In system 1.Supply is installed to repeat the substrate P sent out along its length with roller from supply with the device inspection apparatus 1 of roller
For manufacturing the various processing of device.Therefore, in the longitudinal direction with the continuous state of fixed intervals in substrate P after treatment
Pattern formed with multiple electronic devices (display panel, printed base plate etc.).That is, the substrate sent out from supply with roller
P turns into the substrate of more than one piece processing simultaneously.In addition, substrate P can be it is modified to its surface beforehand through defined pre-treatment and
Make its substrate activated or (utilize impressing formed with the fine next door construction for precise pattern on the surface
Method formed sag and swell) substrate.
Substrate P after processing is wound into roll and reclaimed as recovery with roller.Recovery roller is arranged on (not shown) cut
Cut on device.Being provided with the cutter device of recovery roller is turned into the substrate P after processing more by each Device singulation (cutting)
Individual device.The size of substrate P is, for example, and the size on width (direction for turning into short side) is 10cm~2m or so, length
Size on direction (direction for turning into long side) is more than 10m.In addition, the size of substrate P is not limited to above-mentioned size.
Next, reference picture 1 illustrates to device inspection apparatus 1.Device inspection apparatus 1 has processing unit U1, exposed
Electro-optical device EX and processing unit U2.In addition, in Fig. 1, using X-direction, Y-direction and the orthogonal orthogonal coordinate system of Z-direction.X side
To be in the horizontal plane from processing unit U1 via exposure device EX towards processing unit U2 direction.Y-direction is in horizontal plane
The interior direction orthogonal with X-direction, it is the width of substrate P.Z-direction is direction (the vertical side orthogonal with X-direction and Y-direction
To), the setting face E of production line of the XY faces with being set for exposure device EX is parallel.
Processing (the preceding place of process before processing unit U1 is carried out to the substrate P of device EX to be exposed implementation exposure-processeds
Reason).Processing unit U1 conveys the substrate P for carrying out pre-treatment towards exposure device EX.Now, it is sent to exposure device EX base
Plate P turns into substrate (sensitive substrate) P of its surface formed with photonasty functional layer (photoinduction layer).
Herein, photonasty functional layer is coated in substrate P as solution and dries and turn into layer (film).Photonasty functional layer
Exemplary be photoresist, and as do not need development treatment material, have by ultraviolet irradiation part it is close and distant
The photonasty silane coupling material (SAM) or expose plating also former base in the part irradiated by ultraviolet that fluidity is modified
Photonasty reducing material etc..In the case where using photonasty silane coupling material as photonasty functional layer, due in substrate P
Pattern part through ultraviolet exposure is modified as lyophily by lyophobicity, so optionally being applied on the part as lyophily
Electric conductivity ink (ink of the conductive nanometer particle such as argentiferous or copper) is applied, and forms patterned layer.As photonasty functional layer
In the case of using photonasty reducing material, because plating also former base, institute are exposed in the pattern part through ultraviolet exposure on substrate
So that substrate P is impregnated into the plating solution containing palladium ion etc. immediately after exposure and impregnates the stipulated time, it is consequently formed (precipitation)
The patterned layer formed by palladium.
Exposure device EX to from processing unit U1 supply come substrate P depict such as display panel various circuits or
The pattern of various wirings etc..Exposure device EX by making each description light beam LB be scanned along defined scanning direction to obtain respectively
A plurality of description line LL1~LL5 expose defined pattern in substrate P, it is respectively from multiple delineation units to describe light beam LB
The light beam that UW1~UW5 projects to substrate P, detailed content will be described later.
Processing unit U2 receives the substrate P of the exposed processing in exposure device EX, and to the place of process after substrate P progress
Manage (post processing).In the case where the photonasty functional layer of substrate P is photoresist, processing unit U2 carries out the glass of substrate P
Baking processing, development treatment, cleaning treatment, drying process below glass transition temperature etc..In addition, in the photonasty work(of substrate P
In the case that ergosphere is photonasty plating reducing material, processing unit U2 carries out electroless plating processing, cleaning treatment, dry at
Reason etc..Moreover, substrate P photonasty functional layer be photonasty silane coupling material in the case of, processing unit U2 carry out to
The part as lyophily in substrate P selectively applies the selectivity coating processing of liquid ink, drying process etc..By
Such processing unit U2 processing, the patterned layer of device is formed in substrate P.
＜ exposure devices (substrate board treatment) ＞
Then, exposure device EX is illustrated referring to figs. 1 to Figure 10.Fig. 2 is the major part for the exposure device for representing Fig. 1
The stereogram of configuration.Fig. 3 is the figure for representing configuration relation of the aligming microscope with describing line on substrate.Fig. 4 represents Fig. 1
The figure of the structure of the rotating cylinder and drawing apparatus (delineation unit) of exposure device.Fig. 5 is the main portion for the exposure device for representing Fig. 1
The top view of the configuration divided.Fig. 6 is the stereogram of the structure of the branch's optical system for the exposure device for representing Fig. 1.Fig. 7 is to represent
The figure of the configuration relation of scanner in multiple delineation units of Fig. 1 exposure device.Fig. 8 is that explanation is used to eliminate because of scanner
Reflecting surface inclination caused by describe line dislocation optical texture figure.Fig. 9 is to represent aligming microscope on substrate, retouch
The stereogram of configuration relation between line drawing and encoder head.Figure 10 is the surface of the rotating cylinder for the exposure device for representing Fig. 1
The stereogram of one of construction.
As shown in figure 1, exposure device EX is exposed without using the exposure device of light shield, the description of i.e. so-called no light shield mode
Electro-optical device, it is the direct description exposure device of raster scanning (raster scan) mode in the present embodiment, i.e. an edge
Conveyance direction (length direction) continuously transports substrate P with defined speed, while in the defined scanning direction (width of substrate P
Direction) to describe light beam LB point (spot) light carry out high-velocity scanning, thus, the surface of substrate P is described and in substrate P
Pattern as defined in upper formation.
As shown in figure 1, exposure device EX has：Drawing apparatus 11, substrate transport mechanism 12, aligming microscope AM1, AM2
With control unit 16.Drawing apparatus 11 has multiple delineation unit UW1~UW5.In addition, drawing apparatus 11 passes through multiple delineation units
UW1~UW5 is with a part for the substrate P transported in the state of being close to be supported on above the rotating cylinder DR outer peripheral faces of cylindrical shape
On depict defined pattern, a parts of the cylindric rotating cylinder DR also as substrate transport mechanism 12.Substrate transport mechanism
12 with defined speed by the substrate P moved from the processing unit U1 of preceding process backward process processing unit U2 transport.It is right
Quasi- microscope AM1, AM2 are in order that the pattern that be depicted in substrate P is relatively aligned with substrate P and (is aligned), and is detected advance
Alignment mark formed in substrate P etc..The control exposure of control unit 16 comprising computer, microcomputer, CPU, FPGA etc.
Device EX each several part, makes each several part perform processing.Control unit 16 can be the upper control dress of control device manufacture system 1
The part put either whole upper control device.In addition, control unit 16 is controlled by upper control device.On so-called
The control device of position, can be other devices such as the master computer of management production line.
In addition, as shown in Fig. 2 exposure device EX has at least one of supporting drawing apparatus 11 and substrate transport mechanism 12
Divide the device frame 13 of (rotating cylinder DR etc.), be provided with the device frame 13：Detect rotating cylinder DR rotary angle position
And/or rotary speed, rotation position testing agency (Fig. 4 and the encoder head shown in Fig. 9 of displacement etc. on rotation direction of principal axis
Deng), aligming microscope AM1, AM2 shown in Fig. 1 (or Fig. 3, Fig. 9) etc..Moreover, as shown in Figure 4, Figure 5, in exposure device EX
It is provided with the light supply apparatus CNT projected as the Ultra-Violet Laser (pulsed light) for describing light beam LB.Exposure device EX will be from light source
The description light beam LB that device CNT is projected distributes to the multiple description lists for being formed drawing apparatus 11 with the light quantity (illumination) of approximate equality
Each of first UW1~UW5.
As shown in figure 1, exposure device EX is housed in temperature adjustment chamber EVC.Temperature adjustment chamber EVC is anti-via what is be passively or actively
Cell S U1, SU2 of shaking is arranged on setting face (floor) E of manufacturing works.Anti-vibration unit SU1, SU2 is arranged on setting face E
On, reduce the vibration from setting face E.Inside is remained defined temperature by temperature adjustment chamber EVC, thus, it is possible to suppress internally
Change in shape of the substrate P of conveyance caused by temperature.
Exposure device EX substrate transport mechanism 12 has successively from the upstream side of the conveyance direction of substrate P：Margin location
Put controller EPC, driven roller DR4, tension adjustment roller RT1, rotating cylinder (cylinder roller) DR, tension adjustment roller RT2, driven roller
DR6 and driven roller DR7.
Marginal position controller EPC is adjusted from the position on the width (Y-direction) of the processing unit U1 substrate Ps moved
Put.Marginal position controller EPC is so that from end (edge) position phase on the width of the processing unit U1 substrate Ps sent
The mode in the range of ± more than ten μm~tens μm or so is converged in for target location, makes substrate P fine motion in the direction of the width,
To correct the position on the width of substrate P.
The driven roller DR4 of method of clamping is while clamping carries on the back two sides from the table of the marginal position controller EPC substrate Ps moved
While rotation, substrate P is sent out to the downstream of conveyance direction, thus transported substrate P towards rotating cylinder DR.Rotating cylinder DR will
To be supported in substrate P by the part of pattern exposure in a manner of being close to from the rotation centerline (rotary shaft) extended along Y-direction
AX2 has on the cylindric outer peripheral face of predetermined radius, and is rotated around rotation centerline AX2, thus transports base along its length
Plate P.
In order that such rotating cylinder DR around rotation centerline AX2 rotate, rotating cylinder DR both sides be provided with rotation
Axle portion Sf2 coaxial heart line AX2, axle portion Sf2 are pivotally supported on device frame 13 via bearing as shown in Figure 2.To the axle
Portion Sf2 assigns the rotating torques from driving source (not shown) (motor and/or reduction gear etc.).In addition, make containing rotation
Turn face p3 centered on center line AX2 and the face parallel with YZ faces.
Two groups of tension adjustment roller RT1, RT2 are to winding and being supported on tension force as defined in the imparting of the substrate P on rotating cylinder DR.Two
Clipping driven roller DR6, DR7 of group configures with separating predetermined distance in the conveyance direction of substrate P, to the substrate P after exposure
Relaxation (enough and to spare) DL as defined in imparting.The upstream side for the substrate P that driven roller DR6 clampings move and rotation, driven roller DR7 clampings
The downstream of the substrate P moved and rotation, thus substrate P is transported to processing unit U2.Now, substrate P has been endowed pine
Relaxation DL, thus can absorb compared with driven roller DR6 substrate P caused by conveyance direction downstream conveyance speed change
It is dynamic, it can block because transporting the variation of speed and on influence caused by the exposure-processed of substrate P.
Therefore, substrate transport mechanism 12 adjusts the base moved from processing unit U1 by marginal position controller EPC
Position on plate P width.Substrate transport mechanism 12 will be adjusted the substrate of width position by driven roller DR4
P is transported to tension adjustment roller RT1, and the substrate P for having passed through tension adjustment roller RT1 is transported to rotating cylinder DR.Substrate transporter
The substrate P that structure 12 rotates rotating cylinder DR and thus makes to be supported on rotating cylinder DR transports to tension adjustment roller RT2.Substrate is removed
Mechanism 12 is sent to transport the substrate P for being transported to tension adjustment roller RT2 to driven roller DR6, then the base that driven roller DR6 will be transported to
Plate P transports to driven roller DR7.Then, substrate transport mechanism 12 by driven roller DR6 and driven roller DR7 while to substrate P assign
Relaxation DL, while substrate P is transported to processing unit U2.
Referring again to Fig. 2, exposure device EX device frame 13 is illustrated.It is X-direction, Y-direction and Z side in Fig. 2
To orthogonal orthogonal coordinate system, it is and Fig. 1 identical orthogonal coordinate systems.
As shown in Fig. 2 device frame 13 has successively from the lower side of Z-direction：Main body frame 21, as supporting device
Three point seats 22, the 1st optical table 23, the optical table 25 of travel mechanism 24 and the 2nd.Main body frame 21 is via Anti-vibration unit
SU1, SU2 are arranged on the part on setting face E.E axle supporting (supporting) the rotating cylinder DR in a manner of it can rotate of main body frame 21 and
Tension adjustment roller RT1 (not shown), RT2.1st optical table 23 is arranged on the upper side of rotating cylinder DR vertical, via
Three point seats 22 are arranged on main body frame 21.Three point seats 22 support the 1st optical table 23 by 3 supporting-points, can adjust
The position (height and position) of Z-direction at each supporting-point.Therefore, three point seats 22 can be by the flat surface phase of the 1st optical table 23
Defined gradient is adjusted to for the gradient of horizontal plane.In addition, in assembling device framework 13, the point seat 22 of main body frame 21 and three
Between can in XY faces in X direction and Y-direction carry out position adjustment.On the other hand, after assembled device framework 13, main body
Turn between the point seat 22 of framework 21 and three in XY faces by fixed state (rigid state).
2nd optical table 25 is arranged on the upper side of the vertical of the 1st optical table 23, and is set via travel mechanism 24
Put on the 1st optical table 23.The flat surface of 2nd optical table 25 is parallel with the flat surface of the 1st optical table 23.Drawing apparatus
11 multiple delineation unit UW1~UW5 are arranged on the 2nd optical table 25.Travel mechanism 24 can be by the 1st optical table 23
And 25 respective flat surface of the 2nd optical table remain it is parallel in the state of, with the defined rotary shaft I extended along vertical
Centered on make the 2nd optical table 25 relative to the critically small rotation of the 1st optical table 23.Its rotating range is for example relative to base
Level is set to ± hundreds of millimeters of radians or so, turns into the construction that angle initialization can be carried out with the resolution ratio of 1~several millimeters radians.
In addition, travel mechanism 24 also have the 1st optical table 23 and 25 respective flat surface of the 2nd optical table are remained it is parallel
Make under state the 2nd optical table 25 relative to the 1st optical table 23 in X direction and Y-direction at least one party it is accurate and minutely
The mechanism of displacement movement, so as to make rotary shaft I from reference position in X direction or Y-direction is small with the resolution ratio of μm rank
Displacement.Rotary shaft I extends at reference position in median plane p3 interior edges vertical, and from rotating cylinder DR
Regulation point (midpoint on the width of substrate P) in the surface (along the description face of periphery bending) of substrate P passes through (ginseng
According to Fig. 3).By such travel mechanism 24 make the 2nd optical table 25 rotated relative to the 1st optical table 23 or displacement move
It is dynamic, thus, it is possible to integratedly adjust multiple delineation unit UW1~UW5 relative to rotating cylinder DR or be wrapped on rotating cylinder DR
The position of substrate P.
Then, reference picture 5 illustrates light supply apparatus CNT.Light supply apparatus CNT is arranged on the main body frame 21 of device frame 13
On.Light supply apparatus CNT projects the laser as description light beam LB projected to substrate P.Light supply apparatus CNT has light source, the light
Project light regulation wave band, that photolytic activity acts on strong ultraviolet territory that the exposure with the photonasty functional layer in substrate P is mutually fitted in source.
As light source, it can use and for example be gone out with continuous oscillation or the 3rd high of YAG is gone out with the MHz of several KHz~hundreds of or so impulse hunting
The LASER Light Source of subharmonic laser (wavelength 355nm).
Light supply apparatus CNT has laser generating part CU1 and wavelength conversion section CU2.Laser generating part CU1 has LASER Light Source
OSC, fiber amplifier FB1, FB2.Laser generating part CU1 projects basic wave laser Ls.Fiber amplifier FB1, FB2 utilize optical fiber
Amplify basic wave laser Ls.Laser generating part CU1 makes the basic wave laser Lr of amplification be incident to wavelength conversion section CU2.In wavelength
Wavelength converting optical element, spectroscope and/or polarising beam splitter, prism etc. are provided with converter section CU2, by using these
Light (wavelength) alternative pack takes out the laser of the 355nm as the 3rd higher hamonic wave laser (describe light beam LB).Now, production is made
The LASER Light Source OSC earth pulses synchronous with system clock etc. of non-hibernating eggs sub-light are lighted, and thus light supply apparatus CNT produces wavelength 355nm
Description light beam LB be used as the MHz of several KHz~hundreds of or so pulsed light.In addition, in the situation using this fiber amplifier
Under, by way of LASER Light Source OSC pulsed drive, the hair of 1 pulse of the laser (Lr and/or LB) of final output can be made
It is psec rank between light time.
In addition, as light source, can use such as the mercury vapor lamp of bright line (g lines, h lines, i lines) with ultraviolet territory etc.
Lamp source, the ultraviolet territory below wavelength 450nm have consolidating for the laser diode of oscillation peak, light emitting diode (LED) etc.
Body light source or vibrate the KrF PRKs (wavelength 248nm) of extreme ultraviolet light (DUV light), ArF PRK (wavelength
193nm), the gas laser light source of XeCl PRKs (wavelength 308nm) etc..
Herein, from light supply apparatus CNT project description light beam LB as described later via be located at each delineation unit UW1~
Polarising beam splitter PBS in UW5 and be incident upon in substrate P.Generally, polarising beam splitter PBS becomes the straight line of S-polarization light
The light beam reflection of polarised light, and become the light beam transmission of the rectilinearly polarized light of P polarization light.It is therefore preferable that in light supply apparatus CNT
The description light beam LB that middle injection makes to be incident to polarising beam splitter PBS is as the light beam of rectilinearly polarized light (S-polarization light)
Laser.Further, since the energy density of laser is high, so can suitably ensure to be projected to the illumination of the light beam of substrate P.
Next, illustrate exposure device EX drawing apparatus 11 referring also to Fig. 3.Drawing apparatus 11 is to have used multiple descriptions
The drawing apparatus 11 of unit UW1~UW5, so-called Multibeam.The drawing apparatus 11 makes to retouch from what light supply apparatus CNT was projected
Paint light beam LB branch into it is multiple, and make multiple description light beam LB that branch obtains along in substrate P as Fig. 3 it is a plurality of (
It is, for example, 5 articles in 1st embodiment) describe line LL1~LL5 and distinguish optically focused for small point light (a few μ m diameters) and scan.
Then, drawing apparatus 11 makes by each of a plurality of description line LL1~LL5 the pattern that is depicted in substrate P each other in base
Engaged on plate P width.First, reference picture 3, to by drawing apparatus 11 with multiple description light beam LB be scanned and by
This plurality of description line LL1~LL5 formed in substrate P (the scanning track of point light) is illustrated.
As shown in figure 3, a plurality of description line LL1~LL5 arranges across median plane p3 in the arranged circumferentially of rotating cylinder DR into 2.
Odd-numbered the 1st is abreast configured with Y-axis describe line LL1, the 3rd description line LL3 in the substrate P of the upstream side of direction of rotation
And the 5th describe line LL5.Even-numbered the 2nd is abreast configured with the substrate P in the downstream of direction of rotation with Y-axis to describe
Line LL2 and the 4th describes line LL4.
Each width (Y-direction), i.e. rotating cylinder DR rotation centerline AX2 for describing line LL1~LL5 along substrate P
Formed substantially in parallel, and it is shorter than the size of the substrate P on width.Body more closely say, each line LL1~LL5 that describes can be with
Relative to rotating cylinder DR rotation centerline AX2 bearing of trend (axial direction or width) with defined angle tilt, so that
Obtain and pass through the obtained patterns of a plurality of description line LL1~LL5 when transporting substrate P using substrate transport mechanism 12 with reference speed
Bonding error turns into minimum.
Line LL1 is described in odd-numbered the 1st, the 3rd description line LL3 and the 5th describes center lines of the line LL5 in rotating cylinder DR
Configure the spaced up predetermined distance in AX2 side.In addition, the even-numbered the 2nd describes the descriptions of line LL2 and the 4th line LL4 in rotating cylinder
Configure the DR spaced up predetermined distance in center line AX2 side.Now, the 2nd description line LL2 is configured on center line AX2 directions
Between the 1st description line LL1 and the 3rd describe line LL3.Similarly, the 3rd description line LL3 is configured on center line AX2 directions the
2 description line LL2 and the 4th describe between line LL4.4th description line LL4 is configured on center line AX2 directions describes line LL3 the 3rd
Between the 5th description line LL5.Also, the 1st~the 5th description line LL1~LL5 is configured to the exposure area that will be depicted in substrate P
The whole width covering of A7 width (axial direction).
The description light beam LB for describing line LL1, the 3rd description line LL3 and the 5th description line LL5 scannings along the odd-numbered the 1st
Point light scanning direction be one-dimensional direction, turn into identical direction.In addition, along the even-numbered 2nd describe line LL2 and
4th scanning direction for describing the description light beam LB of line LL4 scannings point light is one-dimensional direction, turns into identical direction.Now,
Along the scanning direction (+Y direction) of the point light for describing light beam LB of odd-numbered description line LL1, LL3, LL5 scannings and along the
Even number bar describes the scanning direction (-Y direction) of the point light for describing light beam LB of line LL2, LL4 scanning as indicated by the arrows in fig. 3
Turn into opposite direction like that.Because delineation unit UW1~UW5 is respectively identical structure, and odd number delineation unit with
Even number delineation unit configures face to face in 180 ° of XY faces internal rotation, and makes to be located in each delineation unit UW1~UW5
The polygonal rotating mirror as optical beam scanner rotate in the same direction.Therefore, from the point of view of the conveyance direction of substrate P, odd number
Bar describe line LL3, LL5 description starting position for describing starting position and even-numbered description line LL2, LL4 on Y-direction with
Error below the diameter dimension of point light is adjacent (or consistent), and similarly, the odd-numbered description for describing line LL1, LL3 terminates
Position is with the even-numbered description end position for describing line LL2, LL4 on Y-direction with the error below the diameter dimension of a light
Adjacent (or consistent).
As described above, odd-numbered line LL1, LL3, LL5 of describing is with the rotation in substrate P with rotating cylinder DR respectively
Turn the almost parallel modes of center line AX2 and a row are configured on the width of substrate P.Also, even number bar description line LL2,
LL4 by respectively in substrate P with rotating cylinder DR rotation centerline AX2 it is almost parallel in a manner of on the width of substrate P
It is configured to a row.
Next, reference picture 4 illustrates to Fig. 7 to drawing apparatus 11.Drawing apparatus 11 has above-mentioned multiple descriptions single
First UW1~UW5, by the description light beam LB branches from light supply apparatus CNT and it is oriented to delineation unit UW1~UW5 branch's optics
System SL and the calibration detecting system 31 for being calibrated.
Branch optical system SL branches into the description light beam LB projected from light supply apparatus CNT multiple, and branch is obtained
Multiple description light beam LB respectively to multiple delineation unit UW1~UW5 guide.Branch optical system SL has：It will be filled from light source
The description light beam LB for putting CNT injections branches into the 1st optical system 41 of 2, the side for being obtained by the branch of the 1st optical system 41
Incident the 2nd optical systems 42 of description light beam LB and the opposing party for being obtained by the branch of the 1st optical system 41 description light beam
The 3rd incident LB optical system 43.In addition, it is provided with branch optical system SL the 1st optical system 41 with describing light beam
Make the pattern displacement mechanism 44 of description light beam LB two-dimensionally lateral displacements in the orthogonal face of LB axis of travel, in branch's optical system
Being provided with SL the 3rd optical system 43 makes the pattern displacement mechanism 45 of description light beam LB two-dimensionally lateral displacements.Branch's optical system
The system SL part positioned at light supply apparatus CNT sides is arranged on main body frame 21, and it is located at delineation unit UW1~UW5 sides
Another part be arranged on the 2nd optical table 25.
1st optical system 41 has 1/2 wave plate 51, polariscope (polarising beam splitter) 52, diffuser (beam
Diffuser) the 53, the 1st speculum 54, the 1st relay lens 55, the 2nd relay lens 56, pattern displacement mechanism 44, the 2nd speculum
57th, the 3rd speculum 58, the 4th speculum 59 and the 1st beam splitter 60.In addition, it is difficult to judge these each parts in Fig. 4, Fig. 5
Configuration relation, therefore, illustrated referring also to Fig. 6 stereogram.
As shown in fig. 6, the description light beam LB projected from light supply apparatus CNT along +X direction incides 1/2 wave plate 51.1/2 ripple
Piece 51 can describe light beam LB plane of incidence internal rotation.Inciding the description light beam LB of 1/2 wave plate 51 polarization direction turns into
Polarization direction as defined in corresponding with the rotation position (angle) of 1/2 wave plate 51.The description light beam LB for having passed through 1/2 wave plate 51 enters
It is incident upon polariscope 52.Polariscope 52 transmits the light composition of the defined polarization direction contained by description light beam LB, on the other hand
The light composition of the polarization direction beyond it is set to be reflected to +Y direction.Therefore, it is possible to pass through the association of 1/2 wave plate 51 and polariscope 52
Make, the intensity for describing light beam LB of the reflection of polariscope 52 is adjusted according to the rotation position of 1/2 wave plate 51.
A part (unwanted smooth composition) transmitted through the description light beam LB of polariscope 52 is irradiated to diffuser and (caught
Light) 53.Diffuser 53 absorbs the incident a part of light composition for describing light beam LB, is leaked into outside so as to suppress the light composition
Portion.Moreover, it is additionally operable to when describe the adjustment operation for the various optical systems that light beam LB is passed through, if keeping laser power
Maximum then power is too strong than relatively hazardous, therefore is changed in a manner of diffuser 53 is absorbed the substantial amounts of light composition for describing light beam LB
The rotation position (angle) of 1/2 wave plate 51, and the power of the description light beam LB towards delineation unit UW1~UW5 is significantly decayed.
Reflected from polariscope 52 to the description light beam LB that +Y direction reflects by the 1st speculum 54 to +X direction, via
1st relay lens 55 and the 2nd relay lens 56 are incident to pattern displacement mechanism 44, and to reaching the 2nd speculum 57.
1st relay lens 55 makes the description light beam LB (almost parallel light beam) from light supply apparatus CNT restrain and form light
Beam receives thin (beam waist), and the 2nd relay lens 56 makes the description light beam LB dissipated after convergence turn into collimated light beam again.
As shown in fig. 6, pattern displacement mechanism 44 contains 2 configured along the direct of travel (+X direction) for describing light beam LB
Planopaallel plate (quartz), a side of the planopaallel plate are configured to around the axle inclination parallel with Y-axis, and the opposing party's is flat
Row surface plate is configured to around the axle inclination parallel with Z axis.According to the angle of inclination of each planopaallel plate, make description light beam
LB lateral displacement and is projected in ZY faces from pattern displacement mechanism 44.
Then, describe light beam LB by the 2nd speculum 57 towards -Y direction reflect and to reaching the 3rd speculum 58, and by the 3rd
Speculum 58 towards -Z direction reflect and to reaching the 4th speculum 59.Description light beam LB is made towards +Y direction by the 4th speculum 59
Reflect and incide the 1st beam splitter 60.1st beam splitter 60 reflects a part of light quantity composition for describing light beam LB towards -X direction
And the 2nd optical system 42 is oriented to, and description light beam LB remaining light quantity composition is oriented to the 3rd optical system 43.In this reality
In the case of applying mode, be oriented to the 2nd optical system 42 description light beam LB after be assigned to 3 delineation unit UW1, UW3,
UW5, the description light beam LB for being oriented to the 3rd optical system 43 are assigned to 2 delineation units UW2, UW4 afterwards.Accordingly, it is preferred that
It is that the 1st beam splitter 60 is 3 in the ratio between the reflectivity of light divisional plane and transmissivity：2 (reflectivity 60%, transmissivities 40%), but not
Necessarily must be this manner it is also possible to be 1：1.
Here, the 3rd speculum 58 and the 4th speculum 59 are set with separating predetermined distance on the rotary shaft I of travel mechanism 24
Put.That is, reflected by the 3rd speculum 58 and description light beam LB (collimated light beam) center line towards the 4th speculum 59 is set
Into (turning into coaxial) consistent with rotary shaft I.
In addition, untill the light supply apparatus CNT comprising the 3rd speculum 58 structure (Fig. 4 Z-direction upper side by
The part that double dot dash line is surrounded) side of main body frame 21 is arranged on, on the other hand, to multiple description lists comprising the 4th speculum 59
Structure untill first UW1~UW5 is arranged on the 2nd optics (in the part that the lower side of Fig. 4 Z-direction is surrounded by double dot dash line) and put down
The side of platform 25.Therefore, the 3rd speculum 58 and the 4th speculum 59 are configured to：Even if the 1st optical table is made by travel mechanism 24
23 rotate against with the 2nd optical table 25, describe light beam LB also with rotary shaft I coaxially through, therefore from the 4th speculum 59 to
The description light beam LB of 1st beam splitter 60 light path will not be changed.So as to even if making the 2nd optical table by travel mechanism 24
25 rotate relative to the 1st optical table 23, the description light that will can be also projected from the light supply apparatus CNT for being located at the side of main body frame 21
Beam LB is suitable and stably guides to the multiple delineation unit UW1~UW5 for being located at the side of the 2nd optical table 25.
2nd optical system 42 is by by the description light beam LB branches of a side of the branch of the 1st beam splitter 60 of the 1st optical system 41
And guided towards odd number delineation unit UW1, UW3, UW5 described later.2nd optical system 42 have the 5th speculum 61, the 2nd point
Beam device 62, the 3rd beam splitter 63 and the 6th speculum 64.
The description light beam LB reflected by the 1st beam splitter 60 of the 1st optical system 41 towards -X direction is by the 5th speculum 61
Reflected towards -Y direction, and incide the 2nd beam splitter 62.Incide the part for describing light beam LB of the 2nd beam splitter 62 by towards-
Z-direction reflects, and 1 delineation unit UW5 (reference picture 5) being directed in odd number delineation unit.Transmitted through the 2nd beam splitting
The description light beam LB of device 62 is incident to the 3rd beam splitter 63.Incide the part for describing light beam LB of the 3rd beam splitter 63 by towards-
Z-direction reflects, and 1 delineation unit UW3 (reference picture 5) being directed in odd number delineation unit.Also, transmitted through
The part for describing light beam LB of 3 beam splitters 63 is reflected by the 6th speculum 64 towards -Z direction, and is directed to odd number and retouches
Paint 1 delineation unit UW1 (reference picture 5) in unit.In addition, in the 2nd optical system 42, to odd number delineation unit
The description light beam LB of UW1, UW3, UW5 irradiation is slightly tilted relative to -Z direction.
In addition, in order to effectively using the power for describing light beam LB, preferably make the reflectivity of the 2nd beam splitter 62 and transmissivity it
Than close to 1：2, make the ratio between reflectivity and transmissivity of the 3rd beam splitter 63 close to 1：1.
On the other hand, the opposing party that the 3rd optical system 43 obtains the branch of the 1st beam splitter 60 by the 1st optical system 41
Description light beam LB branches and towards even number delineation unit UW2, UW4 described later guide.3rd optical system 43 has the 7th
Speculum 71, pattern displacement mechanism 45, the 8th speculum 72, the 4th beam splitter 73 and the 9th speculum 74.
The description light beam LB transmitted by the 1st beam splitter 60 of the 1st optical system 41 along +Y direction is by the court of the 7th speculum 71
+X direction reflects, and is then transmitted from pattern displacement mechanism 45 and incides the 8th speculum 72.Pattern displacement mechanism 45 by with light beam
Displacement mechanism 44 it is same, can inclined 2 planopaallel plates (quartz) composition, make along +X direction towards the row of the 8th speculum 72
The description light beam LB entered lateral displacements in ZY faces.
It is incident towards the description light beam LB that -Y direction reflects towards the 4th beam splitter 73 by the 8th speculum 72.It is irradiated to the 4th beam splitting
The description light beam LB of device 73 part is reflected towards -Z direction, and 1 be directed in the even delineation unit describes list
First UW4 (reference picture 5).Description light beam LB transmitted through the 4th beam splitter 73 is reflected by the 9th speculum 74 towards -Z direction, and by
Guide to 1 delineation unit UW2 in the even delineation unit.In addition, in the 3rd optical system 43, describe to even number
The description light beam LB of unit UW2, UW4 irradiation is also to be slightly tilted relative to -Z direction.
Like this, in branch optical system SL, the description light beam LB from light supply apparatus CNT is described into list towards multiple
First UW1~UW5 and branch into multiple.Now, the 1st beam splitter 60, the 2nd beam splitter 62, the 3rd beam splitter 63 and the 4th beam splitter 73
Make its anti-in a manner of making to turn into same intensity to multiple delineation unit UW1~UW5 description light beam LB irradiated beam intensity
Penetrating rate (transmissivity) turns into the suitable reflectivity for corresponding to the branch's number for describing light beam LB.
In addition, pattern displacement mechanism 44 is configured between the 2nd relay lens 56 and the 2nd speculum 57.Pattern displacement mechanism
44 can finely tune the position for all description line LL1~LL5 to be formed in substrate P in the description face of substrate P with μm rank.
In addition, pattern displacement mechanism 45 can finely tune to form retouching in substrate P in the description face of substrate P with μm rank
Describe line LL2 and the 4th and describe line LL4 in even-numbered the 2nd in line drawing LL1~LL5.
Illustrate multiple delineation unit UW1~UW5 with further reference to Fig. 4, Fig. 5 and Fig. 7.It is more as shown in Fig. 4 (and Fig. 1)
Individual delineation unit UW1~UW5 is 2 row in the arranged circumferentially of rotating cylinder DR across median plane p3.Multiple delineation unit UW1~
In UW5, the 1st, the 3rd, the 5th description line LL1, LL3, LL5 this side (Fig. 5 -X direction is being configured with across median plane p3
Side) it is configured with the 1st delineation unit UW1, the 3rd delineation unit UW3 and the 5th delineation unit UW5.1st delineation unit UW1, the 3rd are described
Unit UW3 and the 5th delineation unit UW5 are configured with separating predetermined distance along Y-direction.In addition, in multiple delineation unit UW1~UW5,
The 2nd description is configured with being configured with the 2nd, the 4th this side (Fig. 5 +X direction side) of description line LL2, LL4 across median plane p3
Unit UW2 and the 4th delineation unit UW4.2nd delineation unit UW2 and the 4th delineation unit UW4 match somebody with somebody with separating predetermined distance along Y-direction
Put.Now, shown in Fig. 2 or Fig. 5 as in the previous, the 2nd delineation unit UW2 retouches positioned at the 1st delineation unit UW1 with the 3rd in the Y direction
Paint between unit UW3.Similarly, the 3rd delineation unit UW3 is located at the 2nd delineation unit UW2 and the 4th delineation unit in the Y direction
Between UW4.4th delineation unit UW4 is in the Y direction between the 3rd delineation unit UW3 and the 5th delineation unit UW5.In addition, such as
Shown in Fig. 4, the 1st delineation unit UW1, the 3rd delineation unit UW3 and the 5th delineation unit UW5 and the 2nd delineation unit UW2 and the 4th are retouched
Unit UW4 is painted symmetrically to configure centered on median plane p3 when from Y-direction.
Next, reference picture 4 illustrates the structure of the optical system in each delineation unit UW1~UW5.Further, since respectively retouch
It is identical structure to paint unit UW1~UW5, so entering by taking the 1st delineation unit UW1 (hereinafter simply referred to as delineation unit UW1) as an example
Row explanation.
Delineation unit UW1 shown in Fig. 4 has：For describing light beam LB along line LL1 (the 1st description line LL1) is described
Point optical scanning, light deflector 81, polarising beam splitter PBS, quarter wave plate 82, scanner 83, bending mirror 84, f- θ lens
System 85 and Y multiplying powers amendment optical component (lens group) 86B comprising cylindrical lens 86.In addition, with polarising beam splitter PBS
It has been disposed adjacently calibration detecting system 31.
Light deflector 81 uses such as acousto-optic element (AOM：Acousto Optic Modulator；Acousto-optic modulator).
AOM is by whether internally generate diffraction grid using ultrasonic wave (high-frequency signal) makes incident description light beam to switch to
1 diffraction light is with on-state (ON states) caused by defined diffraction angular direction and does not produce the off-state of a diffraction light
The light switching device of (OFF state).
Control unit 16 shown in Fig. 1 is by switching to on/off rapidly to switch description light beam light deflector 81
Projection/non-projections of the LB to substrate P.Specifically, on light deflector 81 via relay lens 91 relative to -Z direction somewhat
Obliquely irradiation has one described in light beam LB by branch optical system SL distribution.Disconnection is switched in light deflector 81
When, describe light beam LB and advance in a slanted state, and the shading of shadow shield 92 set in the front for having passed through light deflector 81.
On the other hand, when light deflector 81 switches to connection, describe light beam LB (1 diffraction light) and deflected to -Z direction, pass through light
Deflector 81 and be irradiated on the polarising beam splitter PBS in the Z-direction of light deflector 81.Therefore, in light deflector 81
When switching to connection, describe light beam LB point light projection in substrate P, when light deflector 81 switches to disconnection, describe light beam
LB point light is not incident upon in substrate P.
In addition, AOM configurations are receiving thin position by relay lens 91 and convergent description light beam LB light beam, therefore from
The description light beam LB (1 diffraction light) that light deflector 81 projects is diverging.Therefore, after light deflector 81, provided with making hair
Scattered description light beam LB reverts to the relay lens 93 of collimated light beam.
Polarising beam splitter PBS reflects the description light beam LB irradiated from light deflector 81 via relay lens 93.From
The description light beam LB that polarising beam splitter PBS is projected sequentially enters quarter wave plate 82, scanner 83 (polygonal rotating mirror), bending
Mirror 84, f- θ lens combinations 85, the amendment of Y multiplying powers optical component 86B and cylindrical lens 86, and exist as scanning element light optically focused
In substrate P.
On the other hand, polarising beam splitter PBS and 1/4 ripple being arranged between polarising beam splitter PBS and scanner 83
Piece 82 cooperates so that the reflected light for describing light beam LB being incident upon on substrate P or the rotating cylinder DR under it outer peripheral face is anti-successively
To Y multiplying powers amendment optical component 86B, cylindrical lens 86, f- θ lens combinations 85, bending mirror 84, scanner 83 is entered, therefore
Reflection light transmission can be made.That is, the description light beam LB irradiated from light deflector 81 to polarising beam splitter PBS is to turn into
The laser of the rectilinearly polarized light of S-polarization light, by polarising beam splitter PBS.In addition, by polarising beam splitter PBS
Describe light beam LB and pass through quarter wave plate 82, scanner 83, bending mirror 84, f- θ lens combinations 85, Y multiplying power amendment optical components
86B, cylindrical lens 86 and be radiated in substrate P, and description light beam LB of the optically focused in substrate P point light turns into circularly polarized light.
Reflected light from substrate P (or rotating cylinder DR outer peripheral face) be redirected back into describe light beam LB send light light path and again by
Quarter wave plate 82, thus become the laser of the rectilinearly polarized light as P polarization light.Therefore, reached from substrate P (or rotating cylinder DR)
To polarising beam splitter PBS reflected light transmitted through polarising beam splitter PBS, calibration detection is radiated at via relay lens 94
On the photoelectric sensor 31Cs of system 31.
Like this, polarisation is disposed on the scanning optics comprising scanner 83 and calibration detection system to beam splitter PBS
Light dispenser between system 31.Calibration detecting system 31 share make description light beam LB directive substrate Ps send the big of light optical system
Part is measured, therefore turns into easy and compact optical system.
As shown in Fig. 4 and Fig. 7, scanner 83 has speculum 96, polygonal rotating mirror (polygon mirror) 97 and original
Spot detector 98.The description light beam LB (collimated light beam) for having passed through quarter wave plate 82 is existed via after cylindrical lens 95 by speculum 96
The internal reflection of XY faces, and be irradiated on polygonal rotating mirror 97.Polygonal rotating mirror 97 is configured to comprising the rotary shaft extended along Z-direction
The 97a and multiple reflecting surface 97b formed around rotary shaft 97a.Polygonal rotating mirror 97 is centered on rotary shaft 97a around regulation
Direction of rotation rotation, the description light beam LB being radiated on reflecting surface 97b (has been carried out intensity modulated by light deflector 81
Light beam afterwards) angle of reflection continuously change in XY faces, thus, the description light beam LB of reflection is saturating by bending mirror 84, f- θ
Mirror system 85, the 2nd cylindrical lens 86 (and Y multiplying power amendments optical component 86B) and be concentrated on a light, and along in substrate P
Describe line LL1 (similarly along LL2~LL5) scannings.Origin detector 98 detects description line LL1 (the similarly edges along substrate P
LL2~LL5) what is scanned describes light beam LB origin.Origin detector 98 is across the description light beam LB reflected by each reflecting surface 97b
And configure the opposite survey in speculum 96.
In Fig. 7 for the purpose of simplifying the description, photoelectric detector is illustrate only on origin detector 98, but in fact, also set up
The LED and/or semiconductor of the oriented reflecting surface 97b projection detecting light beams for being projected the polygonal rotating mirror 97 for describing light beam LB swash
The test light source of light etc., origin detector 98 via narrower slit come the Photoelectric Detection detecting light beam in reflecting surface
The reflected light of 97b reflections.
Thus, origin detector 98 is configured to：Always relative to making a light irradiation in the description line LL1 in substrate P
With doing sth. in advance certain time, output represents the pulse signal of origin for the timing of the description starting position of (LL2~LL5).
The description light beam LB that bending mirror 84 is irradiated to from scanner 83 is bent mirror 84 towards -Z direction reflection, and incides
F- θ lens combinations 85, cylindrical lens 86 (and Y multiplying power amendments optical component 86B).
If in addition, each reflecting surface 97b and rotary shaft 97a of polygonal rotating mirror 97 center line it is strictly not parallel,
But be slightly tilted (face inclination), then make to press often based on the description line (LL1~LL5) that the point light being incident upon in substrate P is formed
Individual reflecting surface 97b is moved in X direction in substrate P.Therefore, using Fig. 8 explanations by setting 2 cylindrical lenses 95,86 to subtract
Less or the face that eliminates for each reflecting surface 97b of polygonal rotating mirror 97 tilts and taken describes line LL1~LL5 in X direction
It is mobile.
Shown cylindrical lens 95, scanner 83, f- θ lens combinations 85, the light path of cylindrical lens 86 on the left of Fig. 8
The situation of X/Y plane is deployed in, the situation that the light path is deployed in XZ planes is shown on the right side of Fig. 8.Match somebody with somebody as basic optics
Put, the illuminated description light beam LB of polygonal rotating mirror 97 reflecting surface 97b is configured in the incident light of f- θ lens combinations 85
Pupil position (front side focal position).Thus, relative to the rotation angle θ p/2 of polygonal rotating mirror 97, f- θ lens combinations 85 are incident to
Description light beam LB incidence angle turn into θ p, proportionally determine to be incident upon in substrate P (plane of illumination) with incidence angle θ p
The image height position of point light.Further, since make front side focal positions of the reflecting surface 97b as f- θ lens combinations 85, so as to project
No matter which position on line is described is telecentricity state (turns into the description light beam of point light by description light beam LB in substrate P
Parallel with the optical axis AXf of the f- θ lens combinations 85 all the time state of chief ray).
As shown in figure 8,2 cylindrical lenses 95,86 are in the face (XY face) vertical with the rotary shaft 97a of polygonal rotating mirror 97
Played a role as refracting power (power) for zero parallel plate glass, and the Z-direction (XZ extended in rotary shaft 97a
In face) played a role as the convex lens with certain positive refracting power.Incide the description light beam of the 1st cylindrical lens 95
LB (almost parallel light beam) cross sectional shape is several mm or so circle, if but by the focus position in the XZ faces of cylindrical lens 95
Put and be set in via speculum 96 on the reflecting surface 97b of polygonal rotating mirror 97, then in XY faces with several mm width of light beam,
The point light of convergent slit-shaped extends ground optically focused on reflecting surface 97b along direction of rotation in Z-direction.
It is collimated light beam in XY faces by the reflecting surface 97b of the polygonal rotating mirror 97 description light beam LB reflected, but in XZ faces
Interior (rotary shaft 97a bearing of trend), turns into divergent beams and is incident to f- θ lens combinations 85.Therefore, just from f- θ lens
The description light beam LB that system 85 projects (rotary shaft 97a bearing of trend) in XZ faces turns into almost parallel light beam, but because of the 2nd post
The effect of face lens 86, on removing for substrate P orthogonal with describing line LL1~LL5 bearing of trend in XZ faces, i.e. in substrate P
Direction is sent, also optically focused is a light.Its result is that the dot light of circle is transmitted with each description line in substrate P.
, can be in XZ faces by the anti-of polygonal rotating mirror 97 as shown in Fig. 8 right side by setting cylindrical lens 86
Penetrate face 97b and substrate P (plane of illumination) is set as optically image conjugate relation.Therefore, each reflecting surface 97b of polygonal rotating mirror 97
Tilted even if having relative to the orthogonal non-scan direction (rotary shaft 97a bearing of trend) in the scanning direction with describing light beam LB
Error, the position of the description line (LL1~LL5) in substrate P also will not be in the non-scan direction (conveyance direction of substrate P) of a light
On shift.Like this, by setting cylindrical lens 95,86 before and after polygonal rotating mirror 97, it can form and be directed to
The face tilt correction optical system of the multiaspect reflecting surface of non-scan direction.
Here, as shown in fig. 7, multiple delineation unit UW1~UW5 each scanner 83 turns into symmetrical relative to median plane p3
Structure.3 scanners 83 corresponding with delineation unit UW1, UW3, UW5 configure the rotation in rotating cylinder DR in multiple scanners 83
Turn the upstream side (Fig. 7 -X direction side) in direction, 2 scanners 83 corresponding with delineation unit UW2, UW4 are configured in rotating cylinder
The downstream (Fig. 7 +X direction side) of DR direction of rotation.Moreover, 3 scanners 83 of upstream side and 2 scannings in downstream
Device 83 clips median plane p3 and is arranged as opposed to.Like this, 3 scanners 83 of upstream side and 2 scanners 83 in downstream into
To rotate 180 ° of configuration relation centered on rotary shaft I (Z axis).Therefore, if one side example of 3 polygonal rotating mirrors 97 of upstream side
Such as to anticlockwise, while make description light beam LB expose on polygonal rotating mirror 97, then the description light reflected by polygonal rotating mirror 97
Beam LB from starting position is described, to description end position, scan by the scanning direction (such as Fig. 7 +Y direction) as defined in.The opposing party
Face, if 2 one side of polygonal rotating mirror 97 in downstream to anticlockwise, while making description light beam LB expose to polygonal rotating mirror 97
On, then from the description light beam LB that polygonal rotating mirror 97 reflects from describe starting position to describe end position along with upstream side
Scan the opposite scanning direction of 3 polygonal rotating mirrors 97 (such as Fig. 7 -Y direction).
Here, when being observed in Fig. 4 XZ faces, the description of substrate P is reached from odd number delineation unit UW1, UW3, UW5
Light beam LB axis turns into the direction consistent with setting rhumb line Le1.That is, rhumb line Le1 is set to turn into XZ faces
Link the line that odd-numbered description line LL1, LL3, LL5 and rotation centerline AX2 is formed.Similarly, observed in Fig. 4 XZ faces
When, the axis for describing light beam LB of substrate P is reached from even number delineation unit UW2, UW4 to be turned into setting rhumb line Le2 mono-
The direction of cause.That is, setting rhumb line Le2 to turn into XZ faces links even-numbered describe in line LL2, LL4 and rotation
The line that heart line AX2 is formed.Therefore, each direct of travel (chief ray) for describing light beam LB for turning into point light projection in substrate P is equal
It is set to the rotation centerline AX2 towards rotating cylinder DR.
The amendment of Y multiplying powers is configured between f- θ lens combinations 85 and substrate P with optical component 86B.Y multiplying power amendment optics
Part 86B can make using each delineation unit UW1~UW5 formed description line LL1~LL5 in the Y direction isotropically with
Pettiness amount is expanded or shunk.
Specifically, following mechanism can be used, i.e. make to be covered each by describe line LL1~LL5 has certain thickness
Radioparent planopaallel plate (quartz) mechanically bend (bending) on describing the bearing of trend of line and make description line
The variable mechanism of the multiplying power (scanning length) of Y-direction or the part for making this 3 groups of lens combinations of convex lens, concavees lens, convex lens
Moved along optical axis direction and make variable mechanism of the multiplying power (scanning length) of the Y-direction of description line etc..
The each several part of the drawing apparatus 11 so formed is controlled by control unit 16, is thus depicted in substrate P defined
Pattern.That is, control unit 16 is in during being projeced into the description light beam LB of substrate P and being scanned to scanning direction, based on should
The CAD information for the pattern described in substrate P carries out on/off modulation to light deflector 81, thus makes description light beam LB
Deflection, pattern is depicted on the photoinduction layer of substrate P.In addition, control unit 16 is by making along the description for describing line LL1 scannings
The mobile of the conveyance direction of the substrate P that light beam LB scanning direction and rotation based on rotating cylinder DR are carried out synchronously is exposing
In the A7 of region with describing that line LL1 is corresponding partly depicts defined pattern.
Next, reference picture 3 and Fig. 9 illustrate aligming microscope AM1, AM2.Aligming microscope AM1, AM2 detection are advance
Alignment mark or the reference mark being formed on rotating cylinder DR and/or reference pattern for being formed in substrate P etc..Hereinafter, will
The alignment mark of substrate P and rotating cylinder DR reference mark and/or reference pattern referred to as mark.Aligming microscope AM1, AM2
For the defined pattern contraposition (alignment) for making substrate P and being depicted in substrate P or to rotating cylinder DR and drawing apparatus 11
Calibrated.
Aligming microscope AM1, AM2 are arranged on rotating cylinder compared with the description line LL1~LL5 formed by drawing apparatus 11
The upstream side of DR direction of rotation (conveyance direction of substrate P).In addition, aligming microscope AM1 matches somebody with somebody compared with aligming microscope AM2
Put in the upstream side of rotating cylinder DR direction of rotation.
Aligming microscope AM1, AM2 make light caused by mark from illumination light is projected to substrate P or rotating cylinder DR
The incident objective system GA as detection probe (is representatively shown as aligming microscope AM2 objective system in Fig. 9
GA4) and by two-dimensional CCD, CMOS etc. to via objective system GA and the mark that receives picture (bright visual field picture, dark field picture,
Fluorescence picture etc.) the camera system GD (the camera system GD4 that aligming microscope AM2 is representatively shown as in Fig. 9) that is shot
Deng composition.In addition, it is the wave band hardly for the photoinduction layer in substrate P with sensitivity to mutatis mutandis illumination light
500~800nm of light, such as wavelength or so light.
(width of substrate P) is provided with multiple (such as 3) to aligming microscope AM1 along a row arrangement in the Y direction.Together
Sample, (width of substrate P) is provided with multiple (such as 3) to aligming microscope AM2 along a row arrangement in the Y direction.Also
It is to say, aligming microscope AM1, AM2, which amount to, is provided with 6.
In Fig. 3, in order to easily determine, show it is in 6 aligming microscopes AM1, AM2 each objective system GA, 3 it is right
Quasi- microscope AM1 each objective system GA1~GA3 configuration.Each objective system GA1 based on 3 aligming microscope AM1~
GA3 and viewing area (test position) Vw1~Vw3 in the substrate P (or rotating cylinder DR outer peripheral face) that is formed as shown in Figure 3 that
Sample configures at a prescribed interval in the Y-direction parallel with rotation centerline AX2.As shown in figure 9, pass through each viewing area Vw1
Each objective system GA1~GA3 at~Vw3 center optical axis L a1~La3 is parallel with XZ faces.Similarly, based on 3 alignments
Microscope AM2 each objective system GA and viewing area Vw4~Vw6 in the substrate P (or rotating cylinder DR outer peripheral face) that is formed
Configured at a prescribed interval in the Y-direction parallel with rotation centerline AX2 as shown in Figure 3.As shown in figure 9, by each
Each objective system GA at viewing area Vw4~Vw6 center optical axis L a4~La6 is also parallel with XZ faces.Moreover, observation area
Domain Vw1~Vw3 and viewing area Vw4~Vw6 are configured at a prescribed interval on rotating cylinder DR direction of rotation.
Viewing area Vw1~Vw6 of mark is set in substrate P and/rotating cylinder DR based on aligming microscope AM1, AM2
It is scheduled in the range of such as 500~200 μm of square left and right.Here, aligming microscope AM1 optical axis L a1~La3, i.e. object lens system
System GA optical axis L a1~La3 from rotation centerline AX2 to the extended rhumb line Le3 of rotating cylinder DR radial direction with being set as
Identical direction.Like this, as link aligming microscope AM1 observation when setting rhumb line Le3 is observed in Fig. 9 XZ faces
The line that region Vw1~Vw3 and rotation centerline AX2 are formed.Similarly, aligming microscope AM2 optical axis L a4~La6, i.e. object lens
System GA optical axis L a4~La6 is set with the setting rhumb line Le4 radially extended from rotation centerline AX2 towards rotating cylinder DR
For identical direction.Like this, as link aligming microscope AM2's when from setting rhumb line Le4 in the XZ faces from Fig. 9
The line that viewing area Vw4~Vw6 and rotation centerline AX2 is formed.Now, aligming microscope AM1 is compared with aligming microscope AM2
Configuration is in the upstream side of rotating cylinder DR direction of rotation, therefore median plane p3 is with setting during rhumb line Le3 angulations are more than
Heart face p3 is with setting rhumb line Le4 angulations.
Describe line LL1~LL5's by 5 as shown in figure 3, being configured with separating predetermined distance in X direction in substrate P
The each exposure area A7 depicted.For example formed around exposure area A7 in substrate P useful in crosswise
In multiple alignment mark Ks1~Ks3 (hreinafter referred to as marking) of contraposition.
In Fig. 3, mark Ks1 is set at certain intervals in X direction in the neighboring area of exposure area A7-Y sides, is marked
Note Ks3 is set at certain intervals in X direction in the neighboring area of exposure area A7+Y sides.Moreover, mark Ks2 is along X side
Center in the Y direction is set to the white space between 2 adjacent exposure area A7.
Also, mark Ks1 be formed as during conveying substrate P successively aligming microscope AM1 objective system GA1 sight
Examine in the Vw1 of region and be caught in aligming microscope AM2 objective system GA viewing area Vw4.In addition, mark Ks3 shapes
As during conveying substrate P successively in aligming microscope AM1 objective system GA3 viewing area Vw3 and alignment it is micro-
It is caught in mirror AM2 objective system GA viewing area Vw6.Moreover, mark Ks2 is formed as dividing during conveying substrate P
Not successively in aligming microscope AM1 objective system GA2 viewing area Vw2 and aligming microscope AM2 objective system GA
Viewing area Vw5 in be caught in.
Therefore, in 3 aligming microscopes AM1, AM2, the aligming microscope AM1 of the both sides of rotating cylinder DR Y-direction,
AM2 can observe or detect all the time both sides mark Ks1, the Ks3 for the width for being formed at substrate P.In addition, 3 alignments are aobvious
Central aligming microscope AM1, AM2 of in micro mirror AM1, AM2, rotating cylinder DR Y-direction can be observed or detected all the time
The mark Ks2 that the places such as the gutter between the exposure area A7 described in substrate P are formed.
Here, exposure device EX is the drawing apparatus of so-called Multibeam, therefore in order to which suitably engagement is logical in the Y direction
Multiple patterns that multiple delineation unit UW1~UW5 each description line LL1~LL5 describes in substrate P are crossed each other, it is necessary to be used for
Joining accuracy based on multiple delineation unit UW1~UW5 is suppressed into the calibration in allowed band.In addition, it is necessary to pass through baseline
Management critically obtains aligming microscope AM1, AM2 viewing area Vw1~Vw6 relative to multiple delineation unit UW1~UW5's
Each relative position relation for describing line LL1~LL5.For the baseline management, it is also desirable to calibrate.
For confirming the calibration of the joining accuracy based on multiple delineation unit UW1~UW5 and for aligming microscope
, it is necessary to which at least a portion in supporting substrates P rotating cylinder DR outer peripheral face sets base in the calibration of AM1, AM2 baseline management
Fiducial mark remembers and/or reference pattern.Therefore, as shown in Figure 10, used in exposure device EX and be provided with reference mark in outer peripheral face
And/or the rotating cylinder DR of reference pattern.
Rotating cylinder DR is identically formed with two sides of its outer peripheral face with Fig. 3, Fig. 9 forms rotation position detection described later
Scale portion GPa, GPb of a part for mechanism 14.In addition, rotating cylinder DR in scale portion GPa, GPb inner side in the range of complete cycle
Carve narrow limitation band CLa, the CLb for being provided with and being formed by the rib of concave groove or convex.Width in the Y-direction of substrate P is set
Surely obtain than this 2 limitation the Y-directions with CLa, CLb on interval it is small, and substrate P by it is in rotating cylinder DR outer peripheral face, by
The region for limiting the inner side with CLa, CLb clamping closely supports.
Rotating cylinder DR (also can provided with latticed reference pattern on as the outer peripheral face clamped by limiting with CLa, CLb
As reference mark) in RMP, reference pattern RMP, carved repeatedly provided with relative to rotation with certain spacing (cycle) Pf1, Pf2
Turn center line AX2 with+45 inclined multiple line pattern RL1 (line pattern) of degree and relative to rotation centerline AX2 with-
45 degree of inclined multiple line pattern RL2 (line pattern).In addition, line pattern RL1 and line pattern RL2 width are LW.
Reference pattern RMP is with the frictional force at the part that substrate P contacts with rotating cylinder DR outer peripheral face and/or substrate P
The mode that tension force etc. does not change turns into the uniform skewing scheme case in whole face (oblique trellis pattern).In addition, line pattern RL1, RL2 need not
45 degree must be tilted or make that line pattern RL1 is parallel with Y-axis, makes line pattern RL2 in length and breadth latticed parallel with X-axis
Pattern.Moreover, pattern RL1, RL2 need not be with 90 degree of intersections, can also be so that by adjacent 2 bar chart case RL1 and adjacent 2
The rectangular area that line pattern RL2 is surrounded makes line pattern RL1, RL2 as angle as the rhombus beyond square (or rectangle)
Intersect.
Next, reference picture 3, Fig. 4 and Fig. 9 illustrate rotation position testing agency 14.As shown in figure 9, rotation position is detected
Mechanism 14 is the mechanism for the rotation position for being detected optically by rotating cylinder DR, such as is applicable the encoder for having used rotary encoder etc.
System.Rotation position testing agency 14 be be arranged on rotating cylinder DR both ends scale portion GPa, GPb and respectively with mark
Chi portion GPa, GPb relative multiple encoder head EN1, EN2, EN3, EN4 traverse measuring device.In Fig. 4 and Fig. 9, only
4 encoder head EN1, EN2, EN3, the EN4s relative with scale portion GPa are shown, but are also oppositely disposed with scale portion GPb
There are same encoder head EN1, EN2, EN3, EN4.Rotation position testing agency 14 have can detect the two of rotating cylinder DR
Extensometer YN1, YN2, YN3, YN4 of the movement (the pettiness displacement in the Y-direction that rotation centerline AX2 is extended) of end.
Scale portion GPa, GPb scale are formed as ring-type in the whole circumferential scope of rotating cylinder DR outer peripheral face respectively.
Scale portion GPa, GPb are provided with concavely or convexly in circumferential carved with certain spacing (such as 20 μm) of rotating cylinder DR outer peripheral face
Grid line diffraction grid, be configured to increment type scale.Therefore, scale portion GPa, GPb is around rotation centerline AX2 and rotating cylinder
DR integratedly rotates.
Substrate P is configured to the inner side of scale portion GPa, GPb for avoiding both ends wound on rotating cylinder DR, namely limited
Inner side with CLa, CLb.In the case where needing tight configuration relation, be set as making scale portion GPa, GPb outer peripheral face with
The outer peripheral face of the part of substrate P on rotating cylinder DR turns into the same face (having same radius from center line AX2).For
This, makes scale portion GPa, GPb outer peripheral face radially only be higher by base relative to the rotating cylinder DR outer peripheral face for being used to wind substrate
Plate P amount of thickness.It is set as and base therefore, it is possible to will be formed in the outer peripheral face of scale portion GPa, GPb on rotating cylinder DR
The roughly the same radius of plate P outer peripheral face.So as to, encoder head EN1, EN2, EN3, EN4 can with wound on rotating cylinder
Scale portion GPa, GPb are detected at description face identical radial position in DR substrate P, can be reduced because of measurement position and processing
Radially different caused Abbe error of the position in rotary system.
Encoder head EN1, EN2, EN3, EN4 be arranged respectively at when from rotation centerline AX2 scale portion GPa,
Around GPb, turn into the different position of rotating cylinder DR circumference.Encoder head EN1, EN2, EN3, EN4 and control unit
16 connections.Encoder head EN1, EN2, EN3, EN4 project measuring light beam to scale portion GPa, GPb, and Photoelectric Detection its
The reflected beams (diffraction light), thus by detection signal corresponding with scale portion GPa, GPb circumferential change in location (for example, tool
Have 2 phase signals of 90 degree of phase differences) exported to control unit 16.Control unit 16 is believed the detection by counter circuit (not shown)
Number carrying out interpolation interpolation goes forward side by side line number word processing, thus, it is possible to the resolution measurement rotating cylinder DR of secondary micron angle change,
That is the circumferential change in location of its outer peripheral face.Control unit 16 can also measure removing for substrate P from rotating cylinder DR angle change
Send speed.
In addition, as shown in Fig. 4 and Fig. 9, encoder head EN1 configurations are on rhumb line Le1 is set.Rhumb line Le1 is set
Turn into link in XZ faces and (read to the projected area on scale portion GPa (GPb) based on encoder head EN1 measurement light beam
Fetch bit is put) line that forms with rotation centerline AX2.In addition, as described above, setting rhumb line Le1 to turn into XZ faces will retouch
The line that line drawing LL1, LL3, LL5 and rotation centerline AX2 link.Based on above content, link encoder read head EN1 reading
The line described line LL1, LL3, LL5 and rotation centerline AX2 with the rotation centerline AX2 lines formed and link and formed is put in fetch bit
For identical rhumb line.
Similarly, as shown in Fig. 4 and Fig. 9, encoder head EN2 configurations are on rhumb line Le2 is set.Rhumb line is set
Le2 turns into XZ faces (to be read to the projected area on scale portion GPa (GPb) based on encoder head EN2 measurement light beam
Fetch bit is put) line that links with rotation centerline AX2.In addition, as described above, rhumb line Le2 is set to turn into XZ faces
The line that description line LL2, LL4 and rotation centerline AX2 are linked.Based on above content, link encoder read head EN2 reading
It is phase that fetch bit, which is put with the rotation centerline AX2 lines formed and link description line LL2, LL4 and rotation centerline AX2 line formed,
Same rhumb line.
In addition, as shown in Fig. 4 and Fig. 9, encoder head EN3 configurations are on rhumb line Le3 is set.Rhumb line Le3 is set
Turn into XZ faces (will be read based on encoder head EN3 measurement light beam to the projected area on scale portion GPa (GPb)
Position) line that links with rotation centerline AX2.In addition, as described above, setting rhumb line Le3 to turn into XZ faces will
The line to be linked based on aligming microscope AM1 to the viewing area Vw1~Vw3 and rotation centerline AX2 of substrate P.Based on
Upper content, link encoder read head EN3 reading position and the rotation centerline AX2 lines formed and links aligming microscope AM1
The line that forms of viewing area Vw1~Vw3 and rotation centerline AX2 turn into identical rhumb line when being observed in XZ faces.
Similarly, as shown in Fig. 4 and Fig. 9, encoder head EN4 configurations are on rhumb line Le4 is set.Rhumb line is set
Le4 turns into XZ faces (to be read to the projected area on scale portion GPa (GPb) based on encoder head EN4 measurement light beam
Fetch bit is put) line that links with rotation centerline AX2.In addition, as described above, rhumb line Le4 is set to turn into XZ faces
The line that will be linked based on aligming microscope AM2 to the viewing area Vw4~Vw6 and rotation centerline AX2 of substrate P.It is based on
Above content, link encoder read head EN4 reading position and the rotation centerline AX2 lines formed and links aligming microscope
Turn into identical rhumb line when the line that AM2 viewing area Vw4~Vw6 and rotation centerline AX2 is formed is observed in XZ faces.
To set rhumb line Le1, Le2, Le3, Le4 presentation code device read head EN1, EN2, EN3, EN4 setting orientation
In the case of (angle direction in XZ faces centered on rotation centerline AX2), as shown in figure 4, to set rhumb line
The mode that Le1, Le2 turn into ± θ ° of angle relative to median plane p3 configures multiple delineation unit UW1~UW5 and encoder head
EN1、EN2.Rhumb line Le1 is set and sets rhumb line Le2 to cause encoder head EN1 and encoder head EN2 in scale
The state that turning into around portion GPa (GPb) scale will not spatially interfere is set.
Extensometer YN1, YN2, YN3, YN4 are arranged respectively at scale portion GPa or GPb when from rotation centerline AX2
Around, turn into the different position of rotating cylinder DR circumference.Extensometer YN1, YN2, YN3, YN4 and control unit 16 connect.
Extensometer YN1, YN2, YN3, YN4 by with the description face in the substrate P on rotating cylinder DR radially
Position detection displacement as near as possible, thus, it is possible to reduce Abbe error.Extensometer YN1, YN2, YN3, YN4 are towards rotating cylinder DR
The side at both ends project measuring light beam, and Photoelectric Detection its reflected beams (or diffraction light) thus will be with rotating cylinder
The corresponding detection signal of change in location of the Y-direction (width of substrate P) at DR both ends exports to control unit 16.Control
Portion 16 by measuring circuit (not shown) (counter circuit and interpolation interpolating circuit etc.) the digital processing detection signal, thus, it is possible to
The change in displacement of enough resolution measurement rotating cylinder DR (and substrate P) with secondary micron Y-direction.Control unit 16 can also be from rotation
The change detection rotating cylinder DR of one side at cylinder DR both ends offset rotation.
Extensometer YN1, YN2, YN3, YN4, although as long as there is 1 in 4, in order to measure rotating cylinder DR's
Offset rotation etc., if more than 3 in 4, it becomes possible to grasp the trend (dynamic in the face of a side at rotating cylinder DR both ends
Changes in pitch etc.).In addition, the mark in substrate P can be stably measured by aligming microscope AM1, AM2 in control unit 16
And/or in the case of pattern (or mark on rotating cylinder DR etc.), extensometer YN1, YN2, YN3, YN4 can also be omitted.
Here, control unit 16 detects scale portion (rotating cylinder DR) GPa, GPb anglec of rotation by encoder head EN1, EN2
Position is spent, and carries out being based on odd number and even number delineation unit UW1~UW5 based on the rotary angle position detected
Description.That is, control unit 16 is based in during the description light beam LB projected to substrate P scans to scanning direction
The CAD information for the pattern that should describe in substrate P carries out on/off modulation to light deflector 81, but based on the rotation detected
Gyration position carry out light deflector 81 on/off modulation timing, can precision well in the photoinduction layer of substrate P
On depict pattern.
In addition, control unit 16 is by being stored in the alignment mark detected by aligming microscope AM1, AM2 in substrate P
Anglec of rotation position during Ks1~Ks3, by encoder head EN3, EN4 scale portion GPa, GPb (rotating cylinder DR) detected
Put, can obtain corresponding between the position of alignment mark Ks1~Ks3 in substrate P and rotating cylinder DR rotary angle position
Relation.Similarly, control unit 16 is by being stored in the reference pattern detected by aligming microscope AM1, AM2 on rotating cylinder DR
Rotary angle position during RMP, by encoder head EN3, EN4 scale portion GPa, GPb (rotating cylinder DR) detected, energy
Enough obtain the corresponding relation between the position of the reference pattern RMP on rotating cylinder DR and rotating cylinder DR rotary angle position.Picture
So, aligming microscope AM1, AM2 can critically measure the rotation for the moment that mark is sampled in viewing area Vw1~Vw6
Rotating cylinder DR rotary angle position (or circumferential position).Moreover, in exposure device EX, based on the measurement result make substrate P with
The defined pattern described in substrate P aligns (alignment) or rotating cylinder DR and drawing apparatus 11 is calibrated.
In addition, actual sampling is by being carried out as follows, i.e. in the rotating cylinder measured by encoder head EN3, EN4
DR rotary angle position turns into and the reference pattern on the mark and/or rotating cylinder DR in the substrate P substantially distinguished in advance
During the angle position of position correspondence, by the portrait high speed information of each camera system GD outputs from aligming microscope AM1, AM2
It is written in video memory etc., thus carries out actual sampling.That is, the rotation to be measured by encoder head EN3, EN4
Rotating cylinder DR rotary angle position is triggering, and the portrait information exported from each camera system GD is sampled.In addition, remove the party
Outside method, also have to sample simultaneously in response to each pulse of the clock signal of certain frequency and surveyed by encoder head EN3, EN4
The rotating cylinder DR of amount rotary angle position (counter measures value) and the method from each camera system GD portrait information exported.
Further, since the reference pattern RMP on mark and rotating cylinder DR in substrate P is relative to viewing area Vw1~Vw6
Moved to a direction, so in the sampling of the portrait information exported from each camera system GD, pinch as CCD and/or CMOS
Element and it is expected using the fast element of shutter speed.It is accompanied by this, it is also necessary to which raising is shone viewing area Vw1~Vw6
The brightness of bright illumination light, the lighting source as aligming microscope AM1, AM2, it may be considered that use flash lamp and high brightness
LED etc..
Figure 11 is to represent the explanation figure for describing the position relationship between line and depicting pattern on substrate.Delineation unit UW1
Thus~UW5 depicts pattern P T1~PT5 along line LL1~LL5 is described to describe light beam LB point optical scanning.Describe line
LL1~LL5 description starting position OC1~OC5 turns into pattern P T1~PT5 description initiating terminal PTa.Describe line LL1~LL5
The end position EC1~EC5 of describing turn into pattern P T1~PT5 description terminal PTb.
The pattern P T1 description terminal for describing initiating terminal PTa, the description terminal PTb in description terminal PTb and pattern P T2
PTb is engaged.Similarly, pattern P T2 description initiating terminal PTa and pattern P T3 description initiating terminal PTa are engaged, and pattern P T3's retouches
Paint terminal PTb to engage with pattern P T4 description terminal PTb, pattern P T4 description initiating terminal PTa and pattern P T5 description starting
Hold PTa engagements.Like this, be depicted in pattern P T1~PT5 in substrate P each other along with substrate P to the movement of length direction and
Engaged in the width of substrate P, so as to depict device pattern in the whole region A7 that exposes completely.
Figure 12 is to show to describe the point light of light beam and describe the explanation figure of the relation between line.Delineation unit UW1~UW5
In, typically illustrate delineation unit UW1 and UW2 description line LL1 and LL2.Due to delineation unit UW3~UW5 description line
LL3~LL5 is also likewise, so omitting the description.Pass through the constant speed rotation of polygonal rotating mirror 97, description light beam LB light beam spot
Light SP along description the line LL1 and LL2 in substrate P depict from describe starting position OC1, OC2 to describe end position EC1,
The length LBL of description line untill EC2.
Generally, in directly Exposure mode is described, even in the pattern that the minimum dimension that can be exposed is depicted as device
In the case of, stable pattern is accurately realized also by the multiple-exposure (re-writing more) based on multiple light SP and is retouched
Paint.As shown in figure 12, on line LL1 and LL2 is described, if making an a diameter of Xs of light SP actual effect, it is due to describing light beam LB
Pulsed light, thus by 1 pulsed light (the other fluorescent lifetime of picosecond) and generate point light SP and by next pulsed light and
Generation point light SP by about 1/2 diameter Xs distance CXs in the Y direction on (main scanning direction) it is overlapping in a manner of be scanned.
Further, since with the main scanning for putting light SP along each description line LL1, LL2 simultaneously, substrate P is with certain speed
Transported along +X direction, so respectively describe line LL1, LL2 moves (subscan) with a determining deviation in X direction in substrate P.The spacing
The diameter Xs of a light SP about 1/2 distance CXs, but not limited to this are set to here.Accordingly, with respect to subscan
Direction (X-direction) and, adjacent point light SP each other with the 1/2 of diameter Xs (or the overlap distance beyond it can also) distance
CXs is overlappingly exposed in X direction.Moreover, describing the line LL1 light beam spot for describing percussion at end position EC1
Light SP is with describing the line LL2 light beam spot light SP for describing percussion at end position EC2 along with shifting of the substrate P to length direction
(i.e. subscan) is moved on the width (Y-direction) of substrate P in a manner of overlap distance CXs is engaged, line LL1 is described in setting
Description starting position OC1 and describe end position EC1 and describe line LL2 description starting position OC2 and describe stop bits
Put EC2.
As one, when making light beam spot light SP actual effect diameter Xs be 4 μm, it can well expose and send as an envoy to a light SP's
2 rows × 2 arrange the area or 3 that (the total 4 point light overlappingly arranged on two directions of main scanning and subscan) are occupied
The area that the row of row × 3 (what is overlappingly arranged on two directions of main scanning and subscan adds up to 9 point light) are occupied is minimum
Pattern, i.e. minimum dimension as size is the pattern of 6 μm~8 μm or so of line width.In addition, make polygonal rotating mirror 97
Reflecting surface 97b is 10 faces, when making the rotary speed of the polygonal rotating mirror 97 around rotary shaft 97a be 10,000 more than rpm, based on rotation
The scanning times of point light SP (describing light beam LB) on the description line (LL1~LL5) that polygonal mirror 97 is formed (are set to scan frequency
Fms) it can be more than 1666.66Hz.This means can be retouched in substrate P with per second along conveyance direction (X-direction)
Draw the pattern of the description line amount of more than 1666.Accordingly, if slowing down the conveying distance (conveyance speed) per second of substrate P,
The point light mutual overlap distance CXs relevant with the direction of subscan (X-direction) can be then set as to the diameter Xs's of a light
Less than 1/2 value, such as 1/3,1/4,1/5, in this case, pass through along a light description line Multiple-Scan
To expose identical depicting pattern, the light exposure thus, it is possible to increase the photosensitive layer imparting to substrate P.
In addition, the conveyance speed of the substrate P formed in the rotation driving by rotating cylinder DR is 5mm/s or so situation
Under, the spacing in the X-direction (conveyance direction of substrate P) of the description line LL1 (LL2~LL5 is same) shown in Figure 12 can be made
(distance CXs) is about 3 μm or so.
In this case, the resolution ratio R of the pattern plotter relevant with main scanning direction (Y-direction) is with putting light
SP actual effect diameter Xs and scan frequency Fms is same, according to the on/off for the acousto-optic element (AOM) for forming light deflector 81
Minimum switching time determine.As acousto-optic element (AOM), if using highest response frequency Fss=50MHz modulator,
It is 20ns or so that on-state and off-state respective time, which can then be made,.It is additionally, since 1 based on polygonal rotating mirror 97
(scanning for describing the point light of the length LBL amounts of line) is 1 during the actual effect for the describing light beam LB scanning that reflecting surface 97b is carried out
Reflecting surface 97b the anglec of rotation measurement 1/3 or so, so make description line length LBL be 30mm in the case of, dependent on light
Resolution ratio R determined by the switching time of deflector 81 is R=LBL/ (1/3)/(1/Fms) × 3 μm of (1/Fss) ≈.
According to the relational expression, in order to improve the resolution ratio R of pattern plotter, the acousto-optic element as such as light deflector 81
(AOM), using the modulator that highest response frequency Fss is 100MHz, the switching time for making on/off is 10nsec.Thus,
Resolution ratio R is 1.5 μm as half.In this case, the conveyance speed of substrate P for forming the rotation based on rotating cylinder DR is
Half.As the other method for putting forward high resolution R, the rotary speed of polygonal rotating mirror 97 can also be for example improved.
It is general 30mj/cm that the resist used in usual photoetching, which uses Resist sensitivity Sr,2The resist of left and right.If
If the transmissivity Δ Ts of optical system is 0.5 (50%), sets actual effect sweep time in 1 reflecting surface 97b of polygonal rotating mirror 97
Between be 1/3 or so, set describe the length LBL of line as 30mm, set delineation unit UW1~UW5 quantity Nuw as 5, set based on rotation
The cylinder DR conveyance velocities Vp of substrate P is 5mm/s (300mm/min), then light supply apparatus CNT necessary laser power Pw can be as
Following formula is estimated like that.
Pw=30/60 × 3 × 30 × 5/0.5/ (1/3)=1350mW
Assuming that delineation unit is the situation of 7, light supply apparatus CNT necessary laser power Pw can be estimated with following formula.
Pw=30/60 × 3 × 30 × 7/0.5/ (1/3)=1890mW
For example, if Resist sensitivity is 80mj/cm2Left and right, then in order to identical speed exposure, it is necessary to light beam export
For 3~5W or so light supply apparatus CNT.Instead of high-power light source as preparation, as long as making the rotation based on rotating cylinder DR
The conveyance velocities Vp of the substrate P formed is reduced to 30/80 relative to the 5mm/s of initial value, then also can as light beam output
Exposed using 1.4~1.9W or so light supply apparatus.
In addition, the length LBL for describing line is being set as 30mm, hypothesis light beam spot light SP spot diameter Xs and based on light deflector
Resolution ratio (to specify the minimum lattice of light-beam position, equivalent to 1 pixel) Xg determined by the light switching of 81 acousto-optic element (AOM)
It is equal and in the case of being 3 μm, 1 of polygonal rotating mirror 97 when making the rotary speed of the polygonal rotating mirror 97 in 10 faces be 10,000 rpm
The time of individual rotation by 3/500 second, make during the actual effect scanning that 1 reflecting surface 97b based on polygonal rotating mirror 97 carries out to be 1
The 1/3 of individual reflecting surface 97b anglec of rotation measurement, then passed through based on 1 reflecting surface 97b actual effect sweep time Ts (second) carried out
(3/500) × (1/10) × (1/3) and obtain, be Ts=1/5000 (second).Thus, light supply apparatus CNT is the feelings of pulse laser
Pulsed illumination frequency Fz under condition is obtained by Fz=LBL/ (TsXs), and Fz=50MHz turns into low-limit frequency.Therefore, in reality
Light supply apparatus CNT, it is necessary to more than output frequency 50MHz pulse laser is applied in mode.Accordingly, light supply apparatus CNT pulse
Glow frequency Fz be preferably 2 times of the highest response frequency Fss (such as 50MHz) of the acousto-optic element (AOM) of light deflector 81 with
Upper (such as 100MHz).
Furthermore, it is possible to controlled as following：The acousto-optic element (AOM) of light deflector 81 is switched into connection shape
The drive signal of state/off-state is during acousto-optic element (AOM) migrates from on-state to off-state or from disconnection
The not luminous mode of pulsing during state migrates to on-state, make light supply apparatus CNT with pulsed illumination frequency Fz
The clock signal synchronization of vibration.
Next, from the viewpoint of beam shape (intensity distribution of 2 overlapping point light SP), Figure 13 chart is used
For Mingguang City spot light SP spot diameter Xs and light supply apparatus CNT pulsed illumination frequency Fz between relation.Figure 13 transverse axis
Represent along the Y-direction for describing line or along the description position of the point light SP in the X-direction of the conveyance direction of substrate P or point
Light SP size, the longitudinal axis represent for a single point light SP peak strength to be standardized as 1.0 relative intensity value.In addition, here, set
A single point light SP intensity distribution is J1, it is assumed that is illustrated for Gaussian Profile.
In Figure 13, a single point light SP intensity distribution J1 is relative to peak strength with 1/e2Intensity there is 3 μm of diameter.
Intensity distribution J2~J6 represents to shine such light SP 2 pulsed quantities along main scanning direction or sub-scanning direction staggered positions
The analog result of the intensity distribution (profile) of the integral operation obtained when penetrating in substrate P, make the offset (interval of position respectively
Distance) it is different.
In Figure 13 chart, intensity distribution J5 represent 2 pulsed quantities point light SP with 3 μm of identical spacing distances of diameter
Situation about staggering, intensity distribution J4 represent the situation that the point light SP of 2 pulsed quantities spacing distance is 2.25 μm, intensity distribution J3 tables
Show the situation that the point light SP of 2 pulsed quantities spacing distance is 1.5 μm.Change from intensity distribution J3~J5 can be clear and definite,
In intensity distribution J5, in the case of condition as being irradiated for the point light SP of 3 μm of diameter with 3 μm of intervals, integral operation obtains
Profile be in 2 respective center highest wartys of point light, the opening position at the midpoint of 2 point light, it is left only to obtain 0.3
Right standardized intensity.In contrast, in the case of condition as being irradiated for the point light SP of 3 μm of diameter with 1.5 μm of intervals,
The profile that integral operation obtains is not the obvious warty distribution of profile, but clips the position at the midpoint of 2 point light and substantially put down
Smooth such distribution.
In addition, in fig. 13, intensity distribution J2 represents to make the situation that the spacing distance for putting light SP of 2 pulsed quantities is 0.75 μm
Under integral operation profile, intensity distribution J6 represent spacing distance is set as that a single point light SP intensity distribution J1 half value is complete
Width (FWHM) be 1.78 μm in the case of integral operation profile.
Like this, as than irradiating 2 point light with the short spacing distance CXs in the diameter Xs identicals interval of a light SP
Impulse hunting condition in the case of, there is the distribution of 2 wartys with being readily apparent from, it is therefore desirable for be set as exposure when will not go out
Optimal spacing distance as existing intensity uneven (deterioration for describing precision).As Figure 13 intensity distribution J3 or J6, preferably
The spacing distance CXs of the diameter Xs half with single point light SP or so (such as 40~60%) is overlapping.It is such it is optimal between
Gauge can be by adjusting light supply apparatus CNT pulsed illumination frequency Fz and along describing line from CXs on main scanning direction
Light SP sweep speed or sweep time Ts (rotary speed of polygonal rotating mirror 97) at least one party are put to set, can be passed through
The X-direction of the scan frequency Fms (rotary speed of polygonal rotating mirror 97) of adjustment description line and substrate P on sub-scanning direction
At least one party in translational speed sets.
For example, in the absolute value (sweep time of point light for the rotary speed that can not accurately adjust polygonal rotating mirror 97
Ts, can be by the point light SP's on main scanning direction by adjusting light supply apparatus CNT pulsed illumination frequency Fz in the case of)
Ratio between spacing distance CXs and the diameter Xs (size) for putting light is adjusted to optimum range.
Like this, make 2 point light SP along scanning direction it is overlapping in the case of, even if in the case of Xs ＞ CXs, light source dress
CNT is put by pulsed illumination frequency Fz relation, the i.e. Fz=LBL/ (TsCXs) for being set as meeting Fz ＞ LBL/ (TsXs) pass
System.For example, light supply apparatus CNT pulsed illumination frequency Fz be 100MHz in the case of, if polygonal rotating mirror 97 be 10 faces and
Rotated with 10,000 rpm, then can make to pass through 1/e2Or the actual effect diameter Xs of point light is 3 μm as defined in half value full duration (FWHM),
Make the pulse laser beam (point light) from each delineation unit UW1~UW5 on each description line LL1~LL5 with about the one of diameter Xs
Half is 1.5 μm of interval (CXs) irradiation.The uniformity of light exposure during thereby, it is possible to improve pattern plotter, even fine
Pattern can also obtain that, in accordance with the loyal exposure picture (resist picture) for describing data, high-precision description can be realized.
Moreover, if h is arbitrary integer, the resolution for determining the light switch speed by acousto-optic element (AOM) is needed
The light supply apparatus CNT of rate (response frequency Fss) and pulsed laser light source impulse hunting frequency Fz is converted into position or time
It is relation, the i.e. Fz=hFss relation of integral multiple afterwards.Because the timing switched by the light of acousto-optic element (AOM)
Without on/off during pulsed light beam is sent from light-pulse generator device CNT.
In the exposure device EX of the 1st embodiment, due to having used combination of fiber-optic amplifier FB1, FB2 and wavelength convert
The light-pulse generator device CNT of portion CU2 Wavelength changing element, so being readily derived in ultraviolet band (400~300nm) has
The pulsed light of so high frequency of oscillation.
In addition, based on the pattern that should describe is divided into such as pixel unit of 3 μm of 3 μ m and represented with " 0 ", " 1 " be
The position (bit) of the no point light by each pixel unit radiation pulses light beam arranges (description data) to carry out being based on acousto-optic element (AOM)
Light switching.In the case where the length LBL for describing line is 30mm, it is 10,000 pixels to put the pixel count in 1 time of light scanning, sound
Optical element (AOM) has the response (response frequency Fss) ranked for switching 10,000 amount of pixels during sweep time Ts.It is another
Aspect, by make consecutive points light on main scanning direction for example sets pulse in a manner of 1/2 or so of diameter Xs is overlapping each other
Frequency of oscillation Fz.Accordingly, in a manner of making in previous relational expression Fz=hFss integer h be more than 2, to become Fz ＞ Fss,
Relation between the response frequency Fss of the light of setting impulse hunting frequency Fz and acousto-optic element (AOM) switching is preferably.
Next, the method for adjustment of explanation exposure device EX drawing apparatus 11.Figure 14 is the exposure for representing the 1st embodiment
The flow chart of the method for adjustment of electro-optical device.Figure 15 is to schematically show the relation between the reference pattern of rotating cylinder and description line
Explanation figure.Figure 16 is to schematically show the photoelectric transfer from the reflected light that the reference pattern from rotating cylinder is received in the bright visual field
The explanation figure of the signal of sensor output.Control unit 16 is in order to carry out the position relationship for grasping multiple delineation unit UW1~UW5
Calibration, as shown in Figure 15, make rotating cylinder DR.Rotating cylinder DR can transport is transmissive to degree with description light beam LB
The substrate P of translucency.
As described above, reference pattern RMP and rotating cylinder DR outer peripheral face are integrally formed.As shown in figure 15, reference pattern
Arbitrary reference pattern RMP1 in RMP moves along with the movement of rotating cylinder DR outer peripheral face.Therefore, reference pattern RMP1
After description line LL1, LL3, LL5 has been passed through, by describing line LL2, LL4.For example, control unit 16 is in identical reference pattern
In the case that RMP1 has passed through description line LL1, LL3, LL5, scan delineation unit UW1, UW3, UW5 description light beam LB.So
Afterwards, control unit 16 makes delineation unit UW2, UW4 in the case where identical reference pattern RMP1 has passed through and described line LL2, LL4
Describe light beam LB scannings (step S1).Therefore, reference pattern RMP1 turns into the position for being used to grasp delineation unit UW1~UW5 and closed
The benchmark of system.
The photoelectric sensor 31Cs (Fig. 4) of above-mentioned calibration detecting system 31 via f- θ lens combinations 85 and includes scanning
Reflected light of the scanning optics detection from reference pattern RMP1 of device 83.Photoelectric sensor 31Cs is connected with control unit 16,
Control unit 16 detects photoelectric sensor 31Cs detection signal (step S2).For example, delineation unit UW1~UW5 is by every description
Each of line LL1~LL5 along defined scanning direction by multiple description light beam LB scans multiple row.
For example, as shown in figure 16, delineation unit UW1~UW5 using describe light beam LB from describe starting position OC1 along
On above-mentioned rotating cylinder DR rotation centerline AX2 direction (Y-direction) the 1st is carried out to describe the length LBL (reference picture 12) of line
Column scan SC1.Then, delineation unit UW1~UW5 is using describing light beam LB from starting position OC1 is described along above-mentioned rotation
On cylinder DR rotation centerline AX2 direction (Y-direction) the 2nd column scan is carried out to describe the length LBL (reference picture 12) of line
SC2.Then, delineation unit UW1~UW5, which is utilized, describes light beam LB from starting position OC1 is described along above-mentioned rotating cylinder DR's
On rotation centerline AX2 direction (Y-direction) the 3rd column scan SC3 is carried out to describe the length LBL (reference picture 12) of line.
Because rotating cylinder DR is around rotation centerline AX2 rotations, so the 1st column scan SC1, the 2nd column scan SC2 and the 3rd row
The position for scanning X-directions of the SC3 on reference pattern RMP1 has Δ P1, Δ P2 difference.In addition it is also possible to it is control unit 16
The process in the following order acting each several part：Retouching along the 1st column scan SC1 is carried out in the state of making rotating cylinder DR static
Paint light beam LB scanning, then, make rotating cylinder DR rotation Δ P1 amounts after it is static, carry out the description light beam along the 2nd column scan SC2
LB scanning, makes static after rotating cylinder DR rotations Δ P2 again, carries out the scanning for describing light beam LB along the 3rd column scan SC3.
As described above, in reference pattern RMP, the 2 bar chart cases intersected with each other of rotating cylinder DR outer peripheral face are formed at
RL1, RL2 intersection point portion Cr1, Cr2 are set smaller than the length LBL of above-mentioned description line.Therefore, the 1st column scan is projected
When SC1, the 2nd column scan SC2 and the 3rd column scan SC3 description light beam LB, describe light beam LB be at least radiated at intersection point portion Cr1,
On Cr2.Line pattern RL1, RL2 are formed as concavo-convex on rotating cylinder DR surface.If make the concavo-convex of rotating cylinder DR surface in advance
Layer residual quantity is set as specific condition, then describe light beam LB be incident upon the upper caused reflected light of line pattern RL1, RL2 reflection it is strong
Degree partly produces difference.For example, as shown in figure 16, in the situation of the recess on the surface that line pattern RL1, RL2 are rotating cylinder DR
Under, projected if describing light beam LB on line pattern RL1, RL2, by the reflected light of line pattern RL1, RL2 reflection by photoelectric sensing
Device 31Cs is received in the bright visual field.
Marginal position of the control unit 16 based on the output signal detection reference pattern RMP from photoelectric sensor 31Cs
pscl.For example, control unit 16 is based on the row of output signal storage the 1st obtained in the 1st column scan SC1 from photoelectric sensor 31Cs
Scan position data Dsc1 and reference pattern RMP marginal position pscl central value mpscl.
Then, control unit 16 is based on the output signal storage obtained in the 2nd column scan SC2 from photoelectric sensor 31Cs the
2 column scan position data D sc2 and reference pattern RMP marginal position pscl central value mpscl.Then, control unit 16 is based on
During the 3rd column scan SC3 the 3rd column scan position data D sc3 and reference map are stored from the obtained output signals of photoelectric sensor 31Cs
Case RMP marginal position pscl central value mpscl.
Control unit 16 is according to the 1st column scan position data D sc1, the 2nd column scan position data D sc2 and the 3rd column scan position
Put data Dsc3 and multiple reference pattern RMP marginal position pscl central value mpscl obtained by computing it is intersected with each other
2 bar chart cases RL1, RL2 intersection point portion Cr1, Cr2 coordinate position.Its result is that control unit 16 can also calculate each other
Relation between intersection point portion Cr1, Cr2 and description starting position OC1 of 2 bar chart cases RL1, RL2 intersected.On other descriptions
Unit UW2~5 similarly, control unit 16 can also calculate 2 bar chart cases RL1, RL2 intersected with each other intersection point portion Cr1,
Relation between Cr2 and description starting position OC2~OC5 (reference picture 11).In addition, above-mentioned central value mpscl can also basis
Obtained from the peak value of the signal of photoelectric sensor 31Cs outputs.
Be explained above photoelectric sensor 31Cs the bright visual field receive line pattern RL1, RL2 reflection reflected light feelings
Condition, but photoelectric sensor 31Cs can also be in the reflected light that dark field reception is reflected in line pattern RL1, RL2.Figure 17 is signal
Property represent dark field receive the reference pattern from rotating cylinder reflected light photoelectric sensor explanation figure.Figure 18 is to show
Signal in the photoelectric sensor output of the reflected light of reference pattern of the dark field reception from rotating cylinder is shown to meaning property.Such as figure
Shown in 17 like that, it is saturating to be configured with the light with ring-type between relay lens 94 and photoelectric sensor 31Cs for calibration detecting system 31
Penetrate the light-blocking member 31f in portion.Therefore, photoelectric sensor 31Cs receives the edge in the reflected light of line pattern RL1, RL2 reflection
Light or diffraction light at random.For example, the situation of the recess on the surface that line pattern RL1, RL2 as shown in Figure 18 is rotating cylinder DR
Under, describe light beam LB be projected onto line pattern RL1, RL2 it is upper after, then photoelectric sensor 31Cs dark field reception by line pattern
The reflected light of RL1, RL2 reflection.
Marginal position pscdl of the control unit 16 based on the signal detection reference pattern RMP exported from photoelectric sensor 31Cs.
For example, control unit 16 stores the 1st column scan based on the output signal obtained in the 1st column scan SC1 from photoelectric sensor 31Cs
Position data D sc1 and reference pattern RMP marginal position pscdl central value mpscdl.Then, control unit 16 is based on the 2nd
During column scan SC2 the 2nd column scan position data D sc2 and reference pattern are stored from the obtained output signals of photoelectric sensor 31Cs
RMP marginal position pscdl central value mpscdl.Control unit 16 is based in the 3rd column scan SC3 from photoelectric sensor 31Cs
Obtained output signal storage the 3rd column scan position data D sc3 and reference pattern RMP marginal position pscdl central value
mpscdl。
Control unit 16 is according to the 1st column scan position data D sc1, the 2nd column scan position data D sc2 and the 3rd column scan position
The central value mpscdl for putting data Dsc3 and multiple reference pattern RMP marginal position pscdl is handed over each other by computing to obtain
Intersection point portion Cr1, Cr2 of 2 bar chart cases RL1, RL2 of fork.Its result is that control unit 16 is obtained intersected with each other by computing
Relation between intersection point portion Cr1, Cr2 of 2 bar chart cases RL1, RL2 coordinate position and description starting position OC1.
On other delineation unit UW2~5 similarly, control unit 16 can also calculate 2 bar chart cases intersected with each other
Relation between RL1, RL2 intersection point portion Cr1, Cr2 and description starting position OC2~OC5.Like this, in photoelectric sensor
31Cs is in the case of the reflected light that dark field is received by line pattern RL1, RL2 reflection, it is possible to increase multiple reference pattern RMP's
Marginal position pscdl precision.
As shown in figure 14, control unit 16 according to the detection signal detected in step S2 obtain with a plurality of description line LL1~
Adjustment information (calibration information) (step S3) corresponding to LL5 configuration status or mutual configuration error.Figure 19 is schematically
The explanation figure of the mutual position relationship of reference pattern of rotating cylinder is shown.Figure 20 be schematically show it is a plurality of description line it is relative
The explanation figure of position relationship.As described above, it is configured with the 1st odd-numbered description line LL1, the 3rd description line LL3 and the 5th is retouched
Line drawing LL5, as shown in Figure 19, control unit 16 describes line LL1 for the 1st, the 3rd description line LL3 and the 5th describes line LL5's
Each and prestore the reference range PL between the intersection point portion Cr1 detected.Similarly, control unit 16 is retouched also directed to the 2nd
Line drawing LL2 and the 4th describes each article of line LL4 and prestores the reference range PL between the intersection point portion Cr1 detected.This
Outside, control unit 16 prestores the intersection point portion detected also directed to each article of the 2nd description line LL2 and the 3rd description line LL3
Reference range Δ PL between Cr1.Moreover, in addition, control unit 16 describes line LL4 and the 5th also directed to the 4th describes each of line LL5
Bar and prestore the reference range Δ PL between the intersection point portion Cr1 detected.
For example, as shown in figure 20, on the 1st description starting position OC1 for describing line LL1, control unit 16 is based on from original
The signal of spot detector 98 (reference picture 7) has grasped position relationship, so intersection point portion Cr1 can be obtained with describing starting position
The distance between OC1 BL1.In addition, the description that control unit 16 can also detect the 3rd description line LL3 by origin detector 98 is opened
Beginning position OC3 position, so intersection point portion Cr1 can be obtained with describing the distance between starting position OC3 BL3.Therefore, control
Portion 16 can be obtained based on distance BL1, distance BL3 and reference range PL describe starting position OC1 with describe starting position OC3 it
Between position relationship, and store distance, delta between the origin along between the origin for describing light beam LB for describing line LL1, LL3 scanning
OC13.Similarly, control unit 16 can detect the 5th description starting position OC5 for describing line LL5 position by origin detector 98
Put, so intersection point portion Cr1 can be obtained with describing the distance between starting position OC5 BL5.Therefore, control unit 16 can be based on
Distance BL3, distance BL5 and reference range PL obtain the position described starting position OC3 and described between the OC5 of starting position and closed
System, and store distance, delta OC35 between the origin along between the origin for describing light beam LB for describing line LL3, LL5 scanning.
Control unit 16 can detect the 2nd description starting position OC2 for describing line LL2 position by origin detector 98,
Therefore intersection point portion Cr1 can be obtained with describing the distance between starting position OC2 BL2.In addition, control unit 16 can pass through origin
Line LL4 description starting position OC4 position is described in the detection of detector 98 the 4th, is opened so intersection point portion Cr1 can be obtained with description
The distance between beginning position OC4 BL4.Therefore, control unit 16 can be obtained and retouched based on distance BL2, distance BL4 and reference range PL
Paint starting position OC2 and describe the position relationship between the OC4 of starting position, can store along description line LL2, LL4 scanning
Distance, delta OC24 between origin between description light beam LB origin.
In addition, describe starting position OC1 and describe starting position OC2 be located at via above-mentioned identical reference pattern RMP1 and
The position obtained, so control unit 16 can be easily stored along the origin for describing light beam LB for describing line LL1, LL2 scanning
Between origin between distance, delta OC12.As described above, it is each can to obtain multiple delineation unit UW1~UW5 by exposure device EX
From origin (description starting point) mutual position relationship.
In addition, control unit 16 can be according between the intersection point portion Cr1 detected in the 2nd description line LL2 and the 3rd description line LL3
Reference range Δ PL detections describe starting position OC2 and the bonding errors that engage of description starting position OC3.Moreover, in addition, energy
Start bit is described in reference range Δ PL detections between enough intersection point portion Cr1 detected in the 4th description line LL4 and the 5th description line LL5
Put the bonding error that OC4 engages with describing starting position OC5.
In each description line LL1~LL5 from starting position OC1~OC5 is described to the phase for describing end position EC1~EC5
Between detect 2 intersection point portions Cr1, Cr2.Thereby, it is possible to detect from describe starting position OC1~OC5 to describe end position EC1~
EC5 scanning direction.Its result is, control unit 16 can detect each description line LL1~LL5 relative to along center line AX2 side
To the angular error of (Y-direction).
Control unit 16 obtains the configuration status or mutual with a plurality of description line LL1~LL5 for said reference pattern RMP1
Configuration error corresponding to adjustment information (calibration information).Reference pattern RMP comprising reference pattern RMP1 is between certain
Carve the latticed reference pattern set repeatedly away from (cycle) Pf1, Pf2.Therefore, control unit 16 to each spacing Pf1, Pf2 repeatedly
Reference pattern RMP obtain adjustment information corresponding with a plurality of description line LL1~LL5 configuration status or mutual configuration error
The relevant information of the deviation of (calibration information), computing and a plurality of relative position relation for describing line LL1~LL5.Its result is to control
Portion 16 processed can further improve adjustment corresponding with a plurality of description line LL1~LL5 configuration status or mutual configuration error
The precision of information (calibration information).
Next, as shown in figure 14, control unit 16 is adjusted the processing (step S4) of description state.Control unit 16 is based on
Adjustment information (calibration information) corresponding with a plurality of description line LL1~LL5 configuration status or mutual configuration error and by compiling
Scale portion (rotating cylinder DR) GPa, GPb rotary angle position that code device read head EN1, EN2 are detected, adjust by odd number and
The description position that even number delineation unit UW1~UW5 is formed.Encoder head EN1, EN2 can be based on (the rotation of said scale portion
Rotating cylinder DR) GPa, GPb detection substrate P conveying capacity.
Figure 21 is displacement and the movement of the time per unit for schematically showing substrate in the same manner as Figure 12 before
The explanation figure of relation between the bar number of the description line included in distance.As shown in figure 21, encoder head EN1, EN2 can be examined
Survey the displacement Δ X of simultaneously memory substrate P time per unit.In addition it is also possible to by above-mentioned aligming microscope AM1, AM2 by
Step ground detects multiple alignment mark Ks1~Ks3, obtains displacement Δ X and stores.
In the displacement Δ X of the time per unit of substrate P, a plurality of description line LL1 quilts that are formed by delineation unit UW1
Light beam spot light SP light beam line SPL1, SPL2 and SPL3 describes, and is scanned into respective light beam spot light SP spot diameter
About the 1/2 of Xs is overlapping in X-direction (and Y-direction).Similarly, describe the light beam spot light SP of line LL1 description terminal PTb sides and retouch
The light beam spot light SP of line drawing LL2 description terminal PTb sides is along with substrate P to the movement of length direction and in the width of substrate P
Direction is engaged with overlap distance CXs.
For example, when being moved above and below rotating cylinder DR, formed based on odd number and even number delineation unit UW1~UW5
X-direction description position produce dislocation, it is possible to cause the deviation of the multiplying power of such as X-direction.If rotating cylinder DR is transported
The conveyance speed (translational speed) of substrate P is slack-off, then the spacing distance CXs of light beam line SPL1, SPL2 and SPL3 X-direction becomes
Small, the description multiplying power that can be adjusted to X-direction reduces.On the contrary, if the conveyance speed for the substrate P that rotating cylinder DR is transported is (mobile
Speed) accelerate, then the spacing distance CXs of light beam line SPL1, SPL2 and SPL3 X-direction becomes big, can be adjusted to retouching for X-direction
Paint multiplying power increase.Illustrate to describe line LL1 above by reference to Figure 21, be also same on other descriptions line LL2~LL5.Control
Portion 16 can be based on adjustment information (calibration corresponding with a plurality of description line LL1~LL5 configuration status or mutual configuration error
Information) and scale portion (rotating cylinder DR) GPa, GPb rotary angle position that detects of encoder head EN1, EN2, change base
The displacement Δ X of on plate P length direction, substrate P time per unit and the light beam line included in the displacement
Relation between SPL1, SPL2 and SPL3 bar number.Therefore, control unit 16 can adjust odd number and even number describes list
The description position for the X-direction that first UW1~UW5 is formed.
Figure 22 is the explanation figure of the schematically pulsed light that the system clock of explanation and light-pulse generator synchronously lights.With
Under, illustrated on describing line LL2 referring also to Figure 21, be also same for other description lines LL1, LL3~LL5.Light source
Device CNT can be with synchronously firing light beam spot light SP as system clock SQ pulse signal wp.By changing system clock
SQ frequency Fz changes pulse signal wp pulse spacing Δ wp (=1/Fz).The temporal pulse spacing Δ wp is describing
It is corresponding with the spacing distance CXs of the point light SP of each pulse main scanning direction on line LL2.Control unit 16 makes description light beam LB's
Light beam spot light SP describes the length LBL of line along the description line LL2 scannings in substrate P.
Control unit 16 has during describing light beam LB and being scanned along description line LL2, when partly changing system
Clock SQ cycle, the function in arbitrary position increase and decrease pulse spacing Δ wp in line LL2 is described.For example, in original system
Clock SQ be 100MHz in the case of, control unit 16 with describe the length LBL of line scanning during at a certain time interval
(cycle) makes system clock SQ partly turn into such as 101MHz (or 99MHz).Its result is on the length LBL for describe line
Light beam spot light SP quantity increase and decrease.In other words, control unit 16 is with during describing the length LBL of line scannings, to provide time (1
More than secondary) period distances make system clock SQ duty cycle portion increase and decrease.Thus, light beam spot light SP caused by light source CNT
Interval change by pulse spacing Δ wp variable quantity, and the mutual overlap distance CXs of light beam spot light SP change.And
And the description initiating terminal PTa of Y-direction seems flexible with describing the distance between terminal PTb.
Illustrate an example, in the case where the length LBL for describing line is 30mm, by its 11 decile, by retouching for every about 3mm
Painting the mode at long (period distances) only 1 increases and decreases system clock SQ pulse spacing Δ wp.Pulse spacing Δ wp increase and decrease amount
It is set to as explanation in Figure 13：It will not cause to accumulate along with the spacing distance CXs of 2 adjacent point light SP change
Partite transport calculate profile (intensity distribution) if significantly deteriorate scope, for example make benchmark spacing distance CSx be point light diameter Xs (3 μ
M) 50%, then be set as its ± 15% or so.If pulse spacing Δ wp increase and decrease is+10%, (spacing distance CSx is that point light is straight
Footpath Xs 60%), then length LBL describe line in discrete 10 at, 1 pulsed quantity point light respectively with the 10% of diameter Xs
Mode position of the amount along main scanning direction extension is offset.Its result is that the length LBL of the description line after description can be relative to 30mm
Extend 3 μm.It means that the pattern being depicted in substrate P expands 0.01% (100ppm) in the Y direction.Thus, even if base
In the case that plate P stretches along Y-direction, also depicting pattern can be correspondingly set telescopically to be exposed along Y-direction.
It is configured to, the position increased and decreased pulse spacing Δ wp can be swept by for example describe line LL1~LL5 every 1 time
Retouch be preset as example by system clock SQ every 100 pulse, every 200 pulse, be arbitrarily worth.It so, it is possible
Change the stroke of the main scanning direction (Y-direction) of depicting pattern in larger scope, the flexible and/or deformation pair with substrate P
Should ground dynamically application multiplying power amendment.Therefore, system clock is contained in the exposure device EX of present embodiment control unit 16
SQ generation circuit, the generation circuit have：The original clock signal of pulse spacing Δ wp fixations is produced as system clock SQ
Clock oscillation portion and after the default value to system clock SQ clock pulses counting number, by generation system clock SQ's
The time migration portion that time before next clock pulse increases and decreases relative to tight preceding pulse spacing Δ wp.In addition, describing line
In (length LBL), make the number for the part that system clock SQ pulse spacing Δ wp increases and decreases according to the Y-direction for the pattern that should describe
Multiplying power amendment ratio (ppm) and roughly determine, but can be point light SP corresponding with length LBL in the case of minimum
In sweep time Ts at least 1 at.
Figure 23 is make system clock SQ pulse spacing Δ wp partly variable clock generating circuit one.Figure 23
In, from the basic clock signal CKL of the output of clock oscillation portion 200 frequency identical with system clock SQ.Basic clock signal CKL quilts
Put on time delay Td as defined in the application of each pulse to basic clock signal CKL and generate system clock SQ deferred telegram
Road 202 and the multiple circuit for exporting the multiplied clock signal CKs of such as 20 times of basic clock signal CKL frequency multiplication
204。
Delay circuit 202 by multiplied clock signal CKs umber of pulse internally with untill counting down to setting Δ Ns
Counter.The time that the counter is counted to setting Δ Ns is equivalent to time delay Td.Setting Δ Ns is by default electricity
Road 206 is set.Preinstalled circuit 206 internally has the standard value Ns of the initial value as setting Δ Ns0, (main from outside
CPU etc.) when sending preset value Dsb (value corresponding with time delay Td variation delta Td), new setting Δ Ns is override
For previous setting Δ Ns+Dsb.
The counter that the overriding is counted in response to the pulse from the system clock SQ to being exported from delay circuit 202
Circuit 208 export completion pulse signal b and carry out.Counter circuit 208 has the structure for being repeated and counting as follows：To
System clock SQ umber of pulse count down to preset value Dsa after outputing and completing pulse signal b, and count value is reset into zero and again
The secondary umber of pulse to system clock SQ counts.Preset value Dsa is with the length LBL for describing line is carried out into 1 of the timesharing such as N
The umber of pulse Nck of point light corresponding to length LBL/N, but length LBL/N is not need to correspond to, can arbitrarily be worth.In addition, by with
On delay circuit 202, preinstalled circuit 206, counter circuit 208 form time migration portion.
Figure 24 is the timing diagram of the time-shift of the signal of each several part in the circuit structure for represent Figure 23.In preinstalled circuit
The standard value Ns of initial value is set in 2060, being applied in the setting Δ Ns of delay circuit 202 turns into standard value Ns0.Meter
Number device circuit 208 count down to set umber of pulse Nck before, produce and complete pulse signal b before in the state of, from pre-
If the setting Δ Ns of circuit 206 is Ns0, delay circuit 202 is as shown in Figure 24 according to basic clock signal CKL each pulse
Multiplied clock signal CKs umber of pulse is count down to setting Δ Ns by rising edge, completes to be used as system clock simultaneously with the counting
SQ and export 1 pulse wp.Therefore, from the rising edge of basic clock signal CKL pulse to system clock SQ corresponding arteries and veins
Rush the time delay Td untill wp rising edge1Equivalent to the step-by-step counting to multiplied clock signal CKs to setting Δ Ns's
Time.
In Figure 24, if according to the pulse CK with basic clock signal CKLnAccordingly in time delay Td1Caused system afterwards
Clock SQ pulse wp, preset value Dsa (umber of pulse Nck) amount is counted on counter circuit 208, then counter circuit 208 is defeated
Go out to complete pulse signal b, in response to this, new setting Δ Ns overridings are " the setting Δ Ns+ before tight by preinstalled circuit 206
Dsb”.Preset value Dsb is numerical value corresponding with the variable quantity (Δ Td) of the pulse spacing Δ wp shown in 22, is arranged to negative in Figure 24
Value, but positive value is also same.Therefore, in basic clock signal CKL pulse CKnNext pulse CKn+1It occurs
Before, set and in delay circuit 202 than passing through standard value Ns0The time delay Td of setting1Short Δ Td time delay Td2It is right
The setting Δ Ns answered.
Thus, in response to basic clock signal CKL pulse CKn+1And caused system clock SQ pulse wp ' with it is tight before
Pulse wp between pulse spacing Δ wp ' it is shorter than the pulse spacing Δ wp before it.After pulse wp ' is generated, counting
Device circuit 208 is count down to before the system clock SQ of umber of pulse Nck amounts, is not produced and is completed pulse signal b, so in delay circuit
The setting Δ Ns of 202 settings is kept and time delay Td2Corresponding value, before pulse signal b is completed in following generation, it is
System clock SQ is relative to basic clock signal CKL without exception with time delay Td2The state output delayed.Therefore, by basic
The ratio between the pulse spacing Δ wp that clock signal CKL frequency Fz the is determined and pulse spacing Δ wp ' of passage time offset correction β
For：
β=Δ wp '/Δ wp=1 ± (Δ Td/ Δ wp) (wherein, Δ Td ＜ Δ wp), the pattern painted along description line drawing
The size of width is extended in β ＞ 1 compared with by describing design load as defined in data, (Figure 24 feelings in β ＜ 1
Condition) it is reduced compared with design load.
In the circuit structure of Figure 23 more than, make 1 in the firm system clock SQ for producing and completing to be generated after pulse signal b
Individual pulse wp pulse spacing Δ wp is changed with time Δ Td, is come by each counting of system clock SQ umber of pulse Nck amounts anti-
It is multiple to perform.In addition, in the case of Figure 23 circuit structure, the standard value Ns that such as makes preinstalled circuit 206 internally store0For
20th, it is zero from the preset value Dsb of external setting-up, then no matter completes pulse signal b whether there is generation, it is specified that value Δ Ns keeps 20
(without the state of the description multiplying power amendment of Y-direction).Further, since multiplied clock signal CKs frequency is believed for fundamental clock
20 times of number CKL frequency, in the case where making setting Δ Ns be 20, if making preset value Dsb be arranged to+1 (or -1),
Setting Δ Ns it is each produce and complete pulse signal b when be written imaging 20,21,22, (or 20,19,
18) so increase (or reduction).Moreover, multiplied clock signal CKs 1 pulsed quantity and the pulse spacing Δ wp of standard
Quite, if so making preset value Dsb change with ± 1,2 are continuously put light to 1/20 (5%) of (pulse spacing distance CXs)
Overlapping degree changes in units of 5%.
As noted previously, as swash in response to the system clock SQ that pulse spacing Δ wp like this partly increases and decreases from pulse
The pulsed light beam of the light supply apparatus CNT outputs of light is publicly supplied to each of delineation unit UW1~UW5, therefore is passed through
The pattern that each description line LL1~LL5 is described stretches at the same rate in the Y direction.Therefore, such as at Figure 12 (or Figure 11)
Middle explanation is such, in order to maintain the joining accuracy described between line adjacent in the Y direction, so that it is respective to describe line LL1~LL5
Timing is described in the mode amendment for describing starting position OC1~OC5 (or describing end position EC1~EC5) displacement in the Y direction.
Make the example of system clock SQ pulse spacing Δ wp partly variable circuit structure except such as Figure 23, Tu24Na
Sample makes time delay Td1、Td2Digitally beyond variable mode or simulate variable structure.Alternatively, it is also possible to structure
Turn into, counter circuit 208 be corrected when system clock SQ being count down into preset value Dsb (umber of pulse Nck) every time 1 at pulse
Relative to the pulse spacing Δ wp of standard, with such as 1%, this small value increases and decreases interval delta wp '.In this case, along description
As long as changed in 1 scanning of the length LBL of line point light according to required multiplying power correction by the pulse spacing Δ of standard
Wp is adapted to the quantity at pulse spacing Δ wp ' position.For example, when the quantity at the position for making to be corrected is 100, pass through
The size of the Y-direction for the pattern that 1 point optical scanning is described is increased and decreased with pulse spacing Δ wp amount.
Moreover, the handoff response of the on/off of the light deflector (AOM) 81 shown in Fig. 4 in as describe data and
That sends out continuously ranks (arrangement of place value " 0 " or " 1 ") and carries out, but the submitting of the place value can also be with pulse spacing Δ wp portion
Divide the system clock SQ of ground increase and decrease pulse signal wp (Figure 24) synchronous.Specifically, occur in 1 pulse signal wp to next
During subpulse signal wp occurs, 1 place value is passed out to the drive circuit of light deflector (AOM) 81, as long as in the place value
When for such as " 1 " and previous place value being " 0 ", light deflector (AOM) 81 is switched into on-state from off-state.
In addition, control unit 16 can be based on the configuration status or mutual configuration error pair with a plurality of description line LL1~LL5
The adjustment information (calibration information) answered and can detect rotating cylinder DR both ends displacement extensometer YN1, YN2, YN3, YN4
Detected information adjusts by the description position of odd number and even number delineation unit UW1~UW5 Y-direction carried out
Put, to cause the error because of Y-direction caused by rotating cylinder DR offset rotation to be offset.In addition, control unit 16 being capable of base
In adjustment information (calibration information) corresponding with a plurality of description line LL1~LL5 configuration status or mutual configuration error and energy
It is strange by the to change enough to detect the information detected by extensometer YN1, YN2, YN3, YN4 of the displacement at rotating cylinder DR both ends
The length (the length LBL for describing line) for the Y-direction that several and even number delineation unit UW1~UW5 is formed, to cause because of rotation
The error of Y-direction is offset caused by rotating cylinder DR offset rotation.
In addition, control unit 16 can be based on the configuration status or mutual configuration error pair with a plurality of description line LL1~LL5
The adjustment information (calibration information) answered and the information that is detected by aligming microscope AM1, AM2 are even by odd number and the to adjust
The X-direction or the description position of Y-direction that several delineation unit UW1~UW5 are formed, to cause the X-direction of substrate P or Y-direction
Error offset.
The exposure device EX of 1st embodiment includes the travel mechanism 24 as displacement correction mechanism, and it is as described above
With comprising using from the respective a plurality of description lines for describing light beam LB formation in substrate P of multiple delineation unit UW1~UW5
In LL1~LL5 description face regulation point rotary shaft I centered on, make the 2nd optical table 25 in the description face relative to
The displacement of 1st optical table 23 is moved.By corresponding with a plurality of description line LL1~LL5 configuration status or mutual configuration error
Adjustment information (calibration information), in a plurality of description line LL1~LL5 all relative at least one direction of X-direction and Y-direction
In the case of error, the drive division that control unit is capable of 16 pairs of travel mechanisms 24 is driven control, so that the 2nd optical table
25 move out the displacement of compensating error at least one party's top offset of X-direction and Y-direction.
When making the 2nd optical table 25 be moved at least one party's displacement of X-direction and Y-direction, the 4th reflection shown in Fig. 6
Mirror 59 is in X-direction or Y-direction with its displacement displacement.Especially, the displacement of the Y-direction of the 4th speculum 59 makes from the 3rd anti-
Penetrate the description light beam LB of mirror 58 towards +Y direction reflect when, displacement in z-direction is moved.Then, by the 1st optical system 41
Pattern displacement mechanism 44 moves to correct its displacement to Z-direction.Thereby, it is possible to 2nd optical system later to the 4th speculum 59
The 42 and the 3rd optical system 43 of system maintains to make light beam LB pass through correct light path.
In addition, in the exposure device EX of the 1st embodiment, passing through the configuration status with a plurality of description line LL1~LL5
Or adjustment information (calibration information) corresponding to mutual configuration error, a plurality of description line LL1~LL5 is relative to X-direction and Y-direction
At least one party there is error in the case of, control unit 16 can be driven control to pattern displacement mechanism 44, make to be formed
In substrate P describe line LL1~LL5 in X direction and/or Y-direction somewhat displacement compensating error displacement.
Moreover, in the exposure device EX of the 1st embodiment, passing through the configuration status with a plurality of description line LL1~LL5
Or adjustment information (calibration information) corresponding to mutual configuration error, a plurality of odd-numbered or idol described in line LL1~LL5
In the case that several description lines have error relative at least one party of X-direction and Y-direction, control unit 16 is to pattern displacement mechanism
45 are driven control, make to be formed even-numbered description line LL2, LL4 in substrate P in X direction and/or Y-direction somewhat position
The displacement of compensating error is moved, so as to somewhat adjust with forming odd-numbered description line LL1, LL3, LL5 in substrate P
Between relative position relation.
In addition, control unit 16 can be based on the configuration status or mutual configuration error pair with a plurality of description line LL1~LL5
The adjustment information (calibration information) answered and detected by extensometer YN1, YN2, YN3, YN4 or aligming microscope AM1, AM2
Information, adjustment delineation unit UW1~UW5 Y multiplying powers.For example, the picture for the telecentricity f- θ lens that f- θ lens combinations 85 are included
It is high proportional to incidence angle.Therefore, in the case where only adjusting delineation unit UW1 Y multiplying powers, control unit 16 can be based on adjustment
Information (calibration information) and the information detected by extensometer YN1, YN2, YN3, YN4 or aligming microscope AM1, AM2 are distinguished
The focal length f of f- θ lens combinations 85 is adjusted, thus adjusts Y multiplying powers.In such adjustment mechanism, for example, can combine
Multiplying power correction mechanism, the riffle (halving) for adjustment of displacement of bent plate, telecentricity f- θ lens for multiplying power amendment
It is more than any one in (can inclined parallel plate glass).In addition, pass through the rotation for making to rotate with certain rotary speed
The rotary speed of polygonal mirror 97 is somewhat variable, can make between each point light SP (pulsed light) that synchronously describes with system clock SQ
Gauge is somewhat variable (the adjacent mutual lap of point light is somewhat staggered) from CXs, and result is can also to adjust Y multiplying powers.
The exposure device EX of 1st embodiment includes the travel mechanism 24 as rotating mechanism, and it is included as described above
By forming a plurality of description line LL1~LL5 in substrate P from the respective light beam LB that describe of multiple delineation unit UW1~UW5
Description face in regulation point rotary shaft I centered on, make the 2nd optical table 25 in the description face relative to the 1st optics
Platform 23 rotates.Passing through adjustment information corresponding with a plurality of description line LL1~LL5 configuration status or mutual configuration error
(calibration information), in the case that a plurality of description line LL1~LL5 has angular error relative to Y-direction, control unit 16 can be to moving
The drive division of motivation structure 24 is driven control, the rotation of the 2nd optical table 25 is offset the rotation amount of angular error.
In addition, in the case where needing to carry out rotation amendment to each delineation unit UW1~UW5 respectively, make shown in Fig. 8
F- θ lens combinations 85 and the 2nd cylindrical lens 86 are rotated around optical axis AXf with small quantity, thus enable that each description line LL1~LL5
Minutely (inclination) is rotated in substrate P respectively.By the light beam LB that polygonal rotating mirror 97 scans on non-scan direction along
The bus imaging (optically focused) of cylindrical lens 86, therefore, by the rotation around optical axis AXf of cylindrical lens 86, can make each description
Line LL1~LL5 rotates (inclination).
As long as the description position that the exposure device EX processing of the 1st embodiment is carried out by above-mentioned steps S4 control device
Adjustment processing in it is at least one.In addition, the exposure device EX of the 1st embodiment can also be combined by above-mentioned steps
The processing of the adjustment for the description position that S4 control device is carried out is handled.
By the method for adjustment of substrate board treatment described above, in the exposure device EX of the 1st embodiment, it is not required to
It is used to suppress the test exposure in the adjacent mutual bonding errors of pattern P T1~PT5 of the width (Y-direction) of substrate P,
Or the number of test exposure can be reduced.Therefore, the exposure device EX of the 1st embodiment can shorten test exposure, drying
And time taking calibrating operation is spent in confirmation operation of developing procedure, exposure results etc..Moreover, the exposure device of the 1st embodiment
EX can suppress the waste of the substrate P of the number respective amount with being fed back by test exposure.The exposure device EX of 1st embodiment
Adjustment information (calibration corresponding with a plurality of description line LL1~LL5 configuration status or mutual configuration error can be obtained quickly
Information).The exposure device EX of 1st embodiment can based on the configuration status with a plurality of description line LL1~LL5 or mutually match somebody with somebody
Adjustment information corresponding to error (calibration information) is put to be modified in advance, thus, it is possible in easily modified chi direction or Y-direction,
Each composition such as displacement, rotation, multiplying power.Moreover, the exposure device EX of the 1st embodiment can be improved and overlapped in substrate P
The precision of exposure.
In addition, the exposure device EX of the 1st embodiment illustrates following example：Light deflector 81 includes acousto-optic element, leads to
Polygonal rotating mirror 97 is crossed to carry out spot scan to describe light beam LB, but in addition to spot scan or uses DMD
(Digital Micro mirror Device：DMD) or SLM (Spatial light modulator：Space
Optical modulator) carry out the mode of depicting pattern.
[the 2nd embodiment]
Next, the exposure device EX of the 2nd embodiment is illustrated.In addition, in the 2nd embodiment, in order to keep away
Exempt from the record repeated with the 1st embodiment, an only pair part different from the 1st embodiment illustrate, for the 1st embodiment party
Formula identical structural element mark illustrates with the 1st embodiment identical reference.
In the exposure device EX of 2nd embodiment, the photoelectric sensor 31Cs of calibration detecting system 31 does not detect reference map
Case (also serving as reference mark) RMP, but detect the reflected light (light at random) of alignment mark Ks1~Ks3 in substrate P.
A certain bar of alignment mark Ks1~Ks3 configurations in each description line LL1~LL5 from multiple delineation unit UW1~UW5 passes through
Y-direction substrate P on position.When the point light SP for describing light beam LB is scanned to alignment mark Ks1~Ks3, by right
The light at random of fiducial mark note Ks1~Ks3 reflections is received by photoelectric sensor 31Cs in the bright visual field or dark field.
Control unit 16 detects alignment mark Ks1~Ks3 margin location based on the signal exported from photoelectric sensor 31Cs
Put.Moreover, in a same manner as in the first embodiment, control unit 16 can be according to the detection signal detected by photoelectric sensor 31Cs
To obtain adjustment information (calibration information) corresponding with a plurality of description line LL1~LL5 configuration status or mutual configuration error.
In addition, control unit 16 can be based on the configuration status or mutual configuration error pair with a plurality of description line LL1~LL5
The adjustment information (calibration information) answered and the information detected by aligming microscope AM1, AM2, adjust by odd number and idol
The X-direction or the description position of Y-direction that several delineation unit UW1~UW5 are carried out, to cause the X-direction of substrate P or Y-direction
Error is offset.When the point light SP for describing light beam LB is projected on alignment mark Ks1~Ks3, alignment mark Ks1~Ks3
On photosensitive layer it is photosensitive, alignment mark Ks1~Ks3 is possible to deform in technique afterwards.Preferably, it is previously provided with more
Row alignment mark Ks1~Ks3, aligming microscope AM1, AM2 read the alignment mark Ks1~Ks3 not deformed by exposure.
Therefore, in the exposure device EX of the 2nd embodiment, can contain in pattern plotter packet makes light deflector
(AOM) data of 81 on/off, deforming pair also out of question because of exposure by describing light beam LB point light SP
Fiducial mark note Ks1~Ks3 is nearby scanned, the not point of irradiation light SP near the alignment mark Ks1~Ks3 for being not desired to deform by exposure.
Thereby, it is possible to utilize to describe light beam LB exposures while obtaining calibration information in nearly real time, and also read alignment mark
Ks1~Ks3 (position of substrate P).
In the same manner as the exposure device EX and the exposure device EX of the 1st embodiment of 2nd embodiment, it is no longer necessary to for pressing down
The test exposure of bonding error processed, or the number of test exposure can be reduced.Moreover, in the exposure device of the 2nd embodiment
, can be while carrying out the configuration status or mutually that pattern exposure measures a plurality of description line LL1~LL5 on one side to substrate P in EX
The control information of configuration relation etc., and (almost real-time) the corresponding adjustment information (calibration information) of acquisition quickly.Therefore, exist
, can be based on the control information or adjustment information (calibration information) one measured quickly in the exposure device EX of 2nd embodiment
Edge exposure goes out device pattern and gradually carries out the such amendment of holding specified accuracy and/or adjustment on one side, and can easily press down
Make turns into problem, displacement error comprising in X-direction or Y-direction, rotation error, magnification error etc. more in head modes are described
The reduction of joining accuracy between the delineation unit of each error percentage.Thus, the exposure device EX of the 2nd embodiment can will be in base
Registration accuracy when exposure is overlapped on plate P is to be maintained at high-precision state.
＜ device making methods ＞
Next, reference picture 25 is carried out to device making method.Figure 25 is the device making method for representing each embodiment
Flow chart.
In the device making method shown in Figure 25, carry out being shown by what the self-emission device such as organic EL was formed first
Show the function and performance design of panel, and the circuit pattern and wiring pattern (step S201) for passing through the designs such as CAD.Separately
Outside, preparation is wound with the supply of the flexible substrate P (resin film, metal foil film, plastics etc.) of the base material as display panel
With roller (step S202).In addition, the substrate P in the step S202 roll prepared can be that its surface is carried out as needed
Modified substrate, it is previously formed the substrate of basalis (such as the minute asperities formed by imprinting mode), is laminated with advance
The substrate of the functional membrane and/or hyaline membrane (insulating materials) of photoinduction.
Next, in substrate P formed form display panel device by electrode, wiring, dielectric film, TFT, (film is partly led
Body) etc. composition backplane level, and formed in a manner of being layered on the backplane level and formed by organic EL etc. self-emission device
Luminescent layer (display pixel portion) (step S203).It can also contain what is formed by following process etc. in step S203
Reason：Photoresist layer is exposed using the exposure device EX illustrated in each embodiment before and makes what it developed
Conventional photo-mask process；Pattern exposure is carried out to the substrate P coated with photonasty silane coupling material instead of photoresist
To be modified to the hydrophilic and hydrophobic on surface to form the exposure process of pattern；Pattern exposure is carried out to the catalyst layer of photoinduction
Light optionally to assign plating reproducibility, by electroless plating method formed metal film pattern (wiring, electrode etc.) it is wet
Formula process or the printing process by depicting pattern such as the electric conductivity inks containing Nano silver grain.
Next, by each display panel device cutting substrate continuously manufactured in the substrate P of strip with roller mode
P, protective film (interlayer of resistance to environment) and colored filter etc. are bonded on the surface of each display panel device and carrys out assembly device (step
Rapid S204).Then, the inspection work whether display panel device normally acts on, whether meets desired performance and characteristic is carried out
Sequence (step S205).As described above, display panel (flexible display) can be produced.In addition, the strip sheet by flexibility
Electronic device made of substrate is not limited to display panel or for will be various in automobile and/or electric car etc.
The flexible cloth gauze as wire harness (cloth wire harness) connected between electronic unit.
The explanation of reference
1 device inspection apparatus
11 drawing apparatuses
12 substrate transport mechanisms
13 device frames
14 rotation position testing agencies
16 control units
23 the 1st optical tables
24 travel mechanisms
25 the 2nd optical tables
31 calibration detecting systems
31Cs photoelectric sensors
31f light-blocking members
73 the 4th beam splitters
81 light deflectors
83 scanners
96 speculums
97 polygonal rotating mirrors
97a rotary shafts
97b reflectings surface
98 origin detectors
AM1, AM2 aligming microscope
DR rotating cylinders
EN1, EN2, EN3, EN4 encoder head
EX exposure devices
I rotary shafts
LL1~LL5 describes line
PBS polarising beam splitters
UW1~UW5 delineation units
Claims (14)
1. a kind of substrate board treatment, it is characterised in that have：
Carrying device, its one side by rotating cylinder support strip sheet substrate a part, while by the rotating cylinder around
The rotation of center line and the substrate is moved along its length, wherein, the rotating cylinder have relative to the center line with
The cylindric outer peripheral face that certain radius bending forms；With
Drawing apparatus, it has multiple delineation units, and the plurality of delineation unit is on the substrate by the periphery surface bearing
Modulated description light beam is projected, while with than the substrate on the width of the substrate intersected with the length direction
The small scope of width be scanned, and draw defined pattern along the description line drawing obtained by the scanning, retouched described
Width configuration of the multiple delineation unit in device along the substrate is painted, to cause by the plurality of delineation unit
The pattern that each description line is depicted on the substrate is each other along with the substrate to the movement of length direction and in the base
It is bonded together on the width of plate；
Traverse measuring device, it includes scale portion and encoder head, and the scale portion is configured to together with the rotating cylinder
Rotate and with the scale being upwardly formed in week of the center line relative to the rotating cylinder with predetermined radius, the encoder
Read head and the scale in the scale portion are arranged as opposed to and are used for the movement for exporting the substrate with being transported by the carrying device
The corresponding mobile message of amount or shift position；And
Control unit, it is previously stored with the calibration information relevant with the mutual position relationship of the description line, and is based on being somebody's turn to do
Calibration information and the mobile message from traverse measuring device output are adjusted by the multiple delineation unit each
The description light beam and the description position of pattern that is formed on the substrate, wherein, the description line is by the multiple
Delineation unit is respectively formed on the substrate.
2. substrate board treatment as claimed in claim 1, it is characterised in that
The multiple delineation unit is configured to, to cause the adjacent description for depicting the pattern being engaged with each other on the substrate
One in unit is odd number delineation unit and when another is even number delineation unit, passes through the odd number respectively
The odd-numbered description line and pass through the even-numbered description of even number delineation unit formation respectively that delineation unit is formed
Line is located at the position with certain angle interval in the circumference of the outer peripheral face of the rotating cylinder.
3. substrate board treatment as claimed in claim 2, it is characterised in that
The odd-numbered line of describing is with the side almost parallel with the center line of the rotating cylinder on the substrate respectively
Width of the formula along the substrate is configured to a row, the even-numbered description line with respectively on the substrate with the rotation
The mode that the center line of rotating cylinder is almost parallel is configured to a row in the width of the substrate.
4. substrate board treatment as claimed in claim 3, it is characterised in that
The encoder head of the traverse measuring device includes：
1st encoder head, the 1st encoder head from the center line of the rotating cylinder with being configured to described one
The 1st orientation identical direction during the odd-numbered description line of row, is arranged as opposed to the scale in the scale portion；With
2nd encoder head, the 2nd encoder head from the center line of the rotating cylinder with being configured to described one
The 2nd orientation identical direction during the even-numbered description line of row, is arranged as opposed to the scale in the scale portion.
5. substrate board treatment as claimed in claim 4, it is characterised in that
1st orientation and the 2nd orientation are set so that the 1st encoder head and the 2nd encoder head
Such angular range around the scale in the scale portion is arranged on the state not interfered spatially.
6. the substrate board treatment as any one of claim 1 to 5, it is characterised in that
The substrate board treatment also has a substrate pattern detection means, and the substrate pattern detection means includes being used for along described
Length direction discretely or the detection probe that is detected of the specific pattern that is continuously formed on the substrate, the substrate figure
Pattern detecting apparatus is configured around the rotating cylinder, to cause the detection probe to the detection zone on the substrate with passing through
The description line that each the multiple delineation unit is formed compares the upstream side for the conveyance direction for being set in the substrate,
The control unit based on the calibration information, from the mobile message and described of traverse measuring device output
Detection probe is performed and entered by the description light beam by the positional information of the specific pattern detected by the detection zone
The adjustment of the description position of capable pattern.
7. the substrate board treatment as any one of claim 1 to 5, it is characterised in that
The adjustment for the description position that the control unit performs is included to the shifting of the substrate transported by the carrying device
The processing that dynamic speed is changed.
8. the substrate board treatment as any one of claim 1 to 5, it is characterised in that
The adjustment for the description position that the control unit performs includes the per unit to the substrate on the length direction
The processing that relation between the bar number of the description line contained in the displacement of time and the displacement is changed.
9. the substrate board treatment as any one of claim 1 to 5, it is characterised in that
The drawing apparatus also has light-pulse generator, and the light-pulse generator is sent synchronous with system clock as the description light beam
Ultraviolet territory wavelength pulsed light,
The adjustment for the description position that the control unit performs is included in what the description light beam was scanned along the description line
Period partly changes the processing in the cycle of the system clock.
10. the substrate board treatment as any one of claim 1 to 5, it is characterised in that
The adjustment for the descriptions position that the control unit performs is included to retouching described in being formed by the scanning for describing light beam
The processing that the length of line drawing is changed.
11. the substrate board treatment as any one of claim 1 to 5, it is characterised in that
Each direct of travel of the description light beam projected respectively to the substrate from the multiple delineation unit can be set to that
Towards the center line of the rotating cylinder.
12. the substrate board treatment as any one of claim 1 to 5, it is characterised in that
Substrate board treatment includes：
The platform of the multiple delineation unit is kept with defined position relationship；With
Rotating mechanism, the rotating mechanism make the platform in the description face internal rotation centered on the regulation point in description face,
The description face is will be described more by being formed on the substrate from the respective description light beam of the multiple delineation unit
Bar describes the face that line is included,
The adjustment for the description position that the control unit performs includes the processing for making the platform rotation.
13. the substrate board treatment as any one of claim 1 to 5, it is characterised in that
The multiple delineation unit also has respectively：
Make polygonal rotating mirror of the description light beam towards the substrate to a direction deflection scanning；
By the f- θ lens for describing the description line described in beam direction on substrate after the polygonal rotating mirror deflection scanning；With
And
The cylindrical lens being arranged between the f- θ lens and the substrate, the cylindrical lens has describes prolonging for line with described
The almost parallel bus in direction is stretched, and makes the description beam condenser on the direction orthogonal with the bus.
14. a kind of device making method, it is characterised in that including following processing：
The rotating cylinder of the substrate board treatment any one of claim 1 to 13 is set to support formed with photosensitive with winding
A part for the substrate with flexible strip of sexual function layer, by the rotation of the rotating cylinder and with described in fixing speed edge
Length direction conveys the substrate；
By the control unit using the multiple delineation unit behind the description position that have adjusted pattern respectively in the substrate
The pattern of electronic device is depicted in the photonasty functional layer.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711205151.0A CN107957660B (en) | 2014-04-01 | 2015-03-31 | Pattern drawing device |
| CN201710536857.9A CN107272353B (en) | 2014-04-01 | 2015-03-31 | Substrate processing method using same and substrate board treatment |
| CN201710536605.6A CN107255913B (en) | 2014-04-01 | 2015-03-31 | Substrate processing method using same |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014075841 | 2014-04-01 | ||
| JP2014-075841 | 2014-04-01 | ||
| PCT/JP2015/060079 WO2015152218A1 (en) | 2014-04-01 | 2015-03-31 | Substrate-processing apparatus, device manufacturing method, and substrate processing method |
Related Child Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710536605.6A Division CN107255913B (en) | 2014-04-01 | 2015-03-31 | Substrate processing method using same |
| CN201711205151.0A Division CN107957660B (en) | 2014-04-01 | 2015-03-31 | Pattern drawing device |
| CN201710536857.9A Division CN107272353B (en) | 2014-04-01 | 2015-03-31 | Substrate processing method using same and substrate board treatment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106133610A CN106133610A (en) | 2016-11-16 |
| CN106133610B true CN106133610B (en) | 2017-12-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710536605.6A Active CN107255913B (en) | 2014-04-01 | 2015-03-31 | Substrate processing method using same |
| CN201710536857.9A Active CN107272353B (en) | 2014-04-01 | 2015-03-31 | Substrate processing method using same and substrate board treatment |
| CN201711205151.0A Active CN107957660B (en) | 2014-04-01 | 2015-03-31 | Pattern drawing device |
| CN201580017855.8A Active CN106133610B (en) | 2014-04-01 | 2015-03-31 | Substrate board treatment, device making method and substrate processing method using same |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201710536605.6A Active CN107255913B (en) | 2014-04-01 | 2015-03-31 | Substrate processing method using same |
| CN201710536857.9A Active CN107272353B (en) | 2014-04-01 | 2015-03-31 | Substrate processing method using same and substrate board treatment |
| CN201711205151.0A Active CN107957660B (en) | 2014-04-01 | 2015-03-31 | Pattern drawing device |
Country Status (6)
| Country | Link |
|---|---|
| JP (3) | JP6597602B2 (en) |
| KR (2) | KR102430139B1 (en) |
| CN (4) | CN107255913B (en) |
| HK (3) | HK1247996A1 (en) |
| TW (6) | TWI674484B (en) |
| WO (1) | WO2015152218A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015152217A1 (en) * | 2014-04-01 | 2015-10-08 | 株式会社ニコン | Substrate-processing apparatus, device manufacturing method, and method for adjusting substrate-processing apparatus |
| CN111781806B (en) * | 2015-10-30 | 2023-06-16 | 株式会社尼康 | Substrate processing apparatus |
| JP6607002B2 (en) * | 2015-11-30 | 2019-11-20 | 株式会社ニコン | Pattern drawing device |
| JP6690214B2 (en) * | 2015-12-09 | 2020-04-28 | 株式会社ニコン | Pattern drawing device |
| JP6708217B2 (en) * | 2015-12-17 | 2020-06-10 | 株式会社ニコン | Pattern drawing device |
| TWI740920B (en) * | 2016-03-30 | 2021-10-01 | 日商尼康股份有限公司 | Pattern drawing device, pattern drawing method |
| KR102456403B1 (en) * | 2016-09-29 | 2022-10-20 | 가부시키가이샤 니콘 | Beam scanning device and pattern writing device |
| TWI736621B (en) * | 2016-10-04 | 2021-08-21 | 日商尼康股份有限公司 | Pattern drawing device and pattern drawing method |
| WO2018164087A1 (en) * | 2017-03-10 | 2018-09-13 | 株式会社ニコン | Pattern drawing device and pattern exposure device |
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| KR20220038545A (en) | 2022-03-28 |
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